CN202710738U - Easily-packaged magnetic sensor - Google Patents
Easily-packaged magnetic sensor Download PDFInfo
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- CN202710738U CN202710738U CN 201220331381 CN201220331381U CN202710738U CN 202710738 U CN202710738 U CN 202710738U CN 201220331381 CN201220331381 CN 201220331381 CN 201220331381 U CN201220331381 U CN 201220331381U CN 202710738 U CN202710738 U CN 202710738U
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- magnetic field
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- girder
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Abstract
The utility model discloses an easily-packaged magnetic sensor, which comprises four cantilever beams, a cantilever beam anchorage zone, a first support column, a metal layer, a silicon oxide film layer and a silicon film layer, wherein the cantilever beam anchorage zone is fixed on the top surface of the first support column; the four cantilever beams are in the shape of a cross and are fixed on the side walls of the cantilever beam anchorage zone; the top surface of each cantilever beam is provided with a coil of metal wire, eight connecting through holes are arranged in the cantilever beam anchorage zone and the first support column, and the metal layer is connected with the metal wires through the connecting through holes; the silicon oxide film layer is fixed on the top surface of the silicon film layer, the metal layer is fixed on the top surface of the silicon oxide film layer, and the first support column is fixed on the top surface of the metal layer; and eight solder pads are arranged on the outer sides of the cantilever beams, a second support column is arranged between the solder pads and the metal layer and is internally provided with connecting holes, and the metal layer is connected with the solder pads of the sensor through the connecting holes. The magnetic sensor can be conveniently packaged, and the influence of leads on the performance of the sensor can be reduced.
Description
Technical field
The utility model belongs to sensor technical field, specifically, relates to a kind of magnetic field sensor that is easy to encapsulation.
Background technology
Magnetic field sensor has long history, and the utility model of compass has more wide application till now, and intelligent communication, communication navigation, data storage etc. all need to use magnetic field sensor.
Development along with MEMS (micro electro mechanical system) (MEMS) technology, greatly promoted the development of MEMS magnetic field sensor, the structure that some Miniature magnetic field sensors occurred, the manufacture in enormous quantities of silicon technology makes expensive design and manufacture cost obtain great reduction, the MEMS technique of new development simultaneously can utilize the IC aftertreatment technology to make various physical construction on silicon substrate, for new approach has been opened up in the design of magnetic field sensor.In recent years, realized the structure of the micro-magnetic field sensors of some MEMS, as French Vincent Beroulle, the Laurent Latorre output detections magnetic field by the measurement pressure drag; The torsional pendulum type MEMS magnetic field sensor of the people such as Beverley Eyre design, measure the amplitude that structure is rocked after the magnetic fields lower stress, measures the size in magnetic field; The resonant mode magnetic field sensor that R.Sunier proposes, measure magnetic field by measuring resonance frequency; The resonant mode magnetic field sensor, comprise a gapped magnetic amplitude transformer in two ends, and the material require of making is used soft magnetic material
.these magnetic field sensors can only be measured the size in magnetic field.The encapsulation of magnetic field sensor has important impact to sensor performance, and because metal wire can be subject to the effect of Lorentz force under magnetic fields, inappropriate lead-in wire may cause the interaction of wire, affects the performance of sensor.
Summary of the invention
technical matters:technical problem to be solved in the utility model is: a kind of magnetic field sensor that is easy to encapsulation is provided, and this magnetic field sensor encapsulation is convenient, can reduce the impact of lead-in wire on sensor performance.
technical scheme:for solving the problems of the technologies described above, the technical solution adopted in the utility model is:
A kind of magnetic field sensor that is easy to encapsulation, this magnetic field sensor comprises four semi-girders, semi-girder anchor district, the first support column, metal level, membranous layer of silicon oxide and silicon film, semi-girder anchor district is fixed on the end face of the first support column; Four semi-girders are cruciform, are fixed on the sidewall in semi-girder anchor district; The end face of each semi-girder is provided with a circle metal wire, is provided with eight connecting through holes in semi-girder anchor district and the first support column, and metal level is connected with metal wire by connecting through hole; Membranous layer of silicon oxide is fixed on the end face of silicon film, and metal level is fixed on the end face of membranous layer of silicon oxide, and the first support column is fixed on the end face of metal level; Pad is eight, and eight pads are positioned at the outside of semi-girder, is provided with the second support column between pad and metal level, in the second support column, is provided with connecting hole, and metal level is connected with the pad of sensor by connecting hole.
beneficial effect:compared with prior art, the utlity model has following beneficial effect:
1
.simple in structure, can realize magnetic direction and amplitude measurement simultaneously.The utility model is that this sensor be take substrate as plane for measuring the magnetic field sensor of magnetic direction and amplitude, is provided with semi-girder, metal wire ,Mao district above substrate.Adopt symmetrical structure, belong to balance vibration, the vibration shape is relatively clean, in the situation that the identical stressed moving displacement that can increase structure.When this sensor is in magnetic field, on semi-girder, metal wire is subject to the effect of Lorentz force to produce vibration, can measure the displacement under semi-girder different magnetic field direction at two kinds of different vibration modes, obtain different magnetic-field components, thereby reach the purpose of measuring magnetic direction, and then can measure magnetic field amplitude.The measurement point of getting is 1/4 and 3/4 place for the P1 symmetry at beam edge, is averaged after measuring this value of 2, and the torsion factor can stress eliminating caused is beneficial to the accuracy of measurement.The utility model utilizes metal wire to add that AC signal induces the rood beam structure that Lorentz force drives semi-girder, adopts symmetrical structure, belongs to balance vibration, in the situation that the identical stressed moving displacement that can increase structure.The utility model can adopt the method for optics to obtain to the position measurement of measured point, also can adopt the method for electric capacity to obtain.
2. power consumption is little, highly sensitive, precision is high, temperature influence is little, dependable performance.The displacement of different vibration Analysis of A Cantilever Beam Unders is measured in the utility model utilization, measures the direction in magnetic field.In whole measuring process, electric current is very little, low in energy consumption.In addition, the utility model is located at the semi-girder surrounding by metal wire.Like this, under same magnetic field condition, the stressed maximum of semi-girder and Oscillation Amplitude are also maximum, so power consumption is little, and its sensitivity and precision are higher.The sensor that relatively hot drives, this magnetic field sensor relatively easily drives with Lorentz force, and temperature influence is little.Simultaneously, in this magnetic field sensor, as long as have magnetic field and electric current to exist, semi-girder will produce vibration, dependable performance.
3. can reduce the impact of package lead on sensor.Pad on sensor is connected with lead-in wire, and pad is arranged on the outside of semi-girder, and like this, lead-in wire lost efficacy and can not impact the sensor semi-girder.Sensor construction and the lead-in wire of encapsulation are separated, can reduce the impact of package lead on sensor, prevent that lead-in wire is owing to being subject to the magnetic field force effect, cause and cave in, thereby cause causing short circuit with the collision of magnetic field sensor surface metal line, perhaps, with the length of the metal wire that reduces to work after metal wire is connected, affect the useful effect power of magnetic field sensor, reduce the performance of sensor.
4. will be arranged on the outside of semi-girder with the pad that is connected of lead-in wire, and reduce the length of lead-in wire, the stressed effect in magnetic field that can reduce to go between, reduce power consumption.
5. will be arranged on the outside of semi-girder with the pad that lead-in wire is connected, and lower the height of lead-in wire, and reduce the risk tactile with the outer package shell joint, performance is more reliable.
The accompanying drawing explanation
Fig. 1 is vertical view of the present utility model, wherein, and Shi Mao district between outermost solid box and the solid box at middle part.
Fig. 2 is longitudinal sectional view of the present utility model.
In figure, have: connecting through hole 1, metal wire 2, semi-girder 3, pad 4, connecting hole 41, semi-girder anchor district 5, the first support column 6, metal level 7, membranous layer of silicon oxide 8, silicon film 9.
Specific embodiments
Below in conjunction with accompanying drawing, the technical solution of the utility model is described in detail.
As depicted in figs. 1 and 2, a kind of magnetic field sensor that is easy to encapsulation of the present utility model, comprise four semi-girders 3, semi-girder anchor district 5, the first support column 6, metal level 7, membranous layer of silicon oxide 8 and silicon film 9, semi-girder anchor district 5 is fixed on the end face of the first support column 6.The first support column 6 is column, and is made by monox.Four semi-girders 3 are cruciform, are fixed on the sidewall in semi-girder anchor district 5; The end face of each semi-girder 3 is provided with a circle metal wire 2, in semi-girder anchor district 5 and the first support column 6, is provided with eight connecting through holes 1.Be provided with the first metal column in each connecting through hole 1, the first metal column is connected the end of metal wire 2 with metal level 7.Membranous layer of silicon oxide 8 is fixed on the end face of silicon film 9, and metal level 7 is fixed on the end face of membranous layer of silicon oxide 8.The first support column 6 is fixed on the end face of metal level 7.Pad 4 is eight, and eight pads 4 are positioned at the outside of semi-girder 3, between pad 4 and metal level 7, is provided with the second support column, is provided with connecting hole 41 in the second support column, is provided with the second metal column in connecting hole 41, and this second metal column is connected pad 4 with metal level 7.Metal level 7 is provided with eight the first metal columns and eight the second metal columns.Each first metal column matches with a connecting through hole 1, and the first metal column is connected with metal wire 2.Each second metal column matches with a connecting hole 41, and the second metal column is connected with pad 4.
Pad 4 is distributed in the outside of sensor construction, and as shown in Figure 1, pad 4 is distributed between the solid box at outermost solid box and middle part.Like this, when welding 4 lead-in wire, deficiency will be connected across the top of sensor construction, and the motion of the structure of sensor just can not be subject to the impact of sensor lead like this, is unlikely to link together due to the lead-in wire of structure motion and sensor, causes short circuit.Simultaneously, lead-in wire is connected on the outside of sensor, and the bridge height of lead-in wire can be too not high like this, not can with housing contacts, reduced the requirement encapsulated.
Further, semi-girder 3 and semi-girder anchor district 5 are monolithic construction, and make by silicon nitride.
The course of work of this magnetic field sensor is: in Fig. 1, apply a sinusoidal current arbitrarily in sensor, measure the displacement of 2 on horizontal cantilever beam and vertical semi-girder.Measurement point is each horizontal cantilever beam edge or vertical 1/4 and 3/4 place at semi-girder edge, and 2 with respect to semi-girder edge mid-points symmetry, for example the point of the P1 in Fig. 1 and P2 point, P3 point and P4 point.At transverse magnetic field B
heffect under, the effect that the metal wire on the horizontal cantilever beam and metal wire do not stress, and metal wire is subject to the effect of Lorentz force, the vertical paper of the direction of power, the horizontal cantilever beam will produce displacement like this, and for magnetic field B longitudinally
vmetal wire and metal wire are subject to the effect of Lorentz force, the vertical paper of the direction of power, and the opposite direction of effect, the horizontal cantilever beam will twist like this, and the effect that metal wire does not stress, the comprehensively effect in this both direction magnetic field, horizontal semi-girder can twist and be crooked, get the displacement addition at 2,1/4 and 3/4 place at horizontal cantilever beam edge, average again, can eliminate the copsided operation caused due to torsion, the displacement obtained is only the effect that the horizontal cantilever beam is subject to transverse magnetic field.In like manner, the displacement addition that vertical semi-girder edge 1/4 and 3/4 place are 2, average, the displacement obtained is only the effect that vertical semi-girder is subject to longitudinal magnetic field.Thus, the displacement of horizontal cantilever beam and the component that vertically displacement of semi-girder is whole magnetic field, according to orthogonality principle, can obtain direction and the amplitude in magnetic field.In Fig. 1, B means a magnetic field of any direction, B
hthe component that means the magnetic field levels direction, B
vthe component that means the magnetic field vertical direction.
The preparation process of the magnetic field sensor of said structure is: utilize the micromachining technology silicon chip to form membranous layer of silicon oxide 8, follow splash-proofing sputtering metal, and graphical, apply one deck silicon, then sputter one deck silicon nitride, and then form metal wire 2 on its surface sputtering metal A l surface photoetching, finally by the corrosion releasing structure, form semi-girder 3.Metal wire 2 can be plated on evaporation or electric plating method the upper surface of semi-girder 3, also can use the method for sputter at above-mentioned location arrangements metal wire 2.When adopting the magnetic field force energisation mode to make semi-girder 3 vibration, need between metal wire 2 and the first support column 6, be provided with insulation course, adopting silicon nitride film layer in this example is insulation course.The material of metal wire 2 can be the conducting metals such as aluminium, silver.
Claims (3)
1. one kind is easy to the magnetic field sensor encapsulated, it is characterized in that, this magnetic field sensor comprises four semi-girders (3), semi-girder anchor district (5), the first support column (6), metal level (7), membranous layer of silicon oxide (8) and silicon film (9), and semi-girder anchor district (5) is fixed on the end face of the first support column (6); Four semi-girders (3) are cruciform, are fixed on the sidewall in semi-girder anchor district (5); The end face of each semi-girder (3) is provided with a circle metal wire (2), in semi-girder anchor district (5) and the first support column (6), is provided with eight connecting through holes (1), and metal level (7) is connected with metal wire (2) by connecting through hole (1); Membranous layer of silicon oxide (8) is fixed on the end face of silicon film (9), and metal level (7) is fixed on the end face of membranous layer of silicon oxide (8), and the first support column (6) is fixed on the end face of metal level (7); Pad (4) is eight, eight pads (4) are positioned at the outside of semi-girder (3), be provided with the second support column between pad (4) and metal level (7), be provided with connecting hole (41) in the second support column, metal level (7) is connected with the pad (4) of sensor by connecting hole (41).
2. according to the magnetic field sensor that is easy to encapsulation claimed in claim 1, it is characterized in that, described the first support column (6) is column, and is made by monox.
3. according to the magnetic field sensor that is easy to encapsulation claimed in claim 1, it is characterized in that, described semi-girder (3) and semi-girder anchor district (5) are monolithic construction, and make by silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220331381 CN202710738U (en) | 2012-07-10 | 2012-07-10 | Easily-packaged magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220331381 CN202710738U (en) | 2012-07-10 | 2012-07-10 | Easily-packaged magnetic sensor |
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| CN202710738U true CN202710738U (en) | 2013-01-30 |
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| CN 201220331381 Withdrawn - After Issue CN202710738U (en) | 2012-07-10 | 2012-07-10 | Easily-packaged magnetic sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102759720A (en) * | 2012-07-10 | 2012-10-31 | 东南大学 | Magnetic sensor easy to encapsulate |
-
2012
- 2012-07-10 CN CN 201220331381 patent/CN202710738U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102759720A (en) * | 2012-07-10 | 2012-10-31 | 东南大学 | Magnetic sensor easy to encapsulate |
| CN102759720B (en) * | 2012-07-10 | 2014-06-25 | 东南大学 | Magnetic sensor easy to encapsulate |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130130 Effective date of abandoning: 20140625 |
|
| RGAV | Abandon patent right to avoid regrant |