CN202656076U

CN202656076U - Polishing piece

Info

Publication number: CN202656076U
Application number: CN 201220352607
Authority: CN
Inventors: 潘国强
Original assignee: LIYANG JIYAN ABRASIVES CO Ltd
Current assignee: LIYANG JIYAN ABRASIVES CO Ltd
Priority date: 2012-07-20
Filing date: 2012-07-20
Publication date: 2013-01-09
Anticipated expiration: 2022-07-20

Abstract

The utility model provides a polishing piece with long service life, comprising a clamping area and a working area, wherein the clamping area is positioned at the central part of the polishing piece and extends along the radial direction of the polishing piece; the periphery of the clamping area is connected with the inner circle of the working area; and the working area extends outwards along the radial direction of the polishing piece, and simultaneously extends towards one side of the polishing piece along the axis of the polishing piece.

Description

Polished silicon wafer

Technical field

The utility model relates to polished silicon wafer, specifically, is a kind of grid polished silicon wafer, is used for the places such as steel surface rust cleaning, polishing, polishing, has high life, good toughness, good permeability characteristics.

Background technology

Traditional grid polished silicon wafer referring to Fig. 1,2, comprises pinch zones 1 and workspace 2; Pinch zones is positioned at the central part of polished silicon wafer, along the radially extension of polished silicon wafer, the center of pinch zones has connecting hole 11.The workspace extends radially outwardly along polished silicon wafer.Link to each other by a conical surface between the periphery of pinch zones and the inner ring of workspace.Traditional grid polished silicon wafer because of the workspace be one with the perpendicular plane of the axis of polished silicon wafer, in use, the whole end face 3 of its workspace all contacts with processed product, causes the consumption that is worn very soon of its working face, so that the service life during the product polishing operation is very short.

Summary of the invention

The purpose of this utility model provides a kind of polished silicon wafer of long service life.

This polished silicon wafer comprises pinch zones and workspace; Pinch zones is positioned at the central part of polished silicon wafer, along the radially extension of polished silicon wafer; The periphery of pinch zones links to each other with the inner ring of workspace; The workspace is along the extending radially outwardly of polished silicon wafer the time, and one side is extended along the polished silicon wafer axis to polished silicon wafer.

The beneficial effects of the utility model: because workspace of the present utility model is along the extending radially outwardly of polished silicon wafer the time, one side is extended along the polished silicon wafer axis to polished silicon wafer, that is to say, the workspace is a rake (rather than with the perpendicular plane of the axis of polished silicon wafer), so it in use, the whole end face that is not the workspace contacts with work piece, and just smaller portions of workspace contact with work piece, so long service life.

Above-mentioned polished silicon wafer, workspace and polished silicon wafer radially between angle be 10 °-80 °.In the constant situation of polishing condition, workspace and polished silicon wafer radially between angle when larger, the grinding force that the utility model is subject in use increases gradually, improve the service life of product gradually.

Above-mentioned polished silicon wafer, workspace are curved surfaces; Perhaps the workspace is a conical surface; Perhaps along polished silicon wafer radially from inside to outside, the workspace is to comprise at least two continuous conical surfaces, links to each other at the bottom of the cone of the vertex of a cone that is positioned at the inboard conical surface and the conical surface in the outside adjacent with it; Link to each other with the periphery of pinch zones at the bottom of the cone of the most inboard conical surface.

Description of drawings

Fig. 1 is the front view (profile) of traditional grid polished silicon wafer.

Fig. 2 is the upward view of Fig. 1.

Fig. 3 is the front view (profile) of the grid polished silicon wafer of embodiment 1.

Fig. 4 is the front view (profile) of the grid polished silicon wafer of embodiment 2.

Fig. 5 is the upward view of Fig. 4.

The specific embodiment

Embodiment 1:

Referring to grid polished silicon wafer shown in Figure 3, comprise pinch zones 1 and workspace 2.Pinch zones is positioned at the central part of polished silicon wafer, along the radially extension of polished silicon wafer, the center of pinch zones has connecting hole 11.The workspace is a level and smooth curved surface, and it is along the extending radially outwardly of polished silicon wafer the time, and one side is extended along the polished silicon wafer axis to polished silicon wafer.The periphery of pinch zones links to each other by the circular arc R transition with the inner ring of workspace.The outermost tangent line of workspace and polished silicon wafer radially between angle V be 80 °.During use, the end face of its workspace 2 (anchor ring) 3 contacts and polishes with work piece.

Embodiment 2:

Referring to the grid polished silicon wafer shown in Fig. 4,5, comprise pinch zones 1 and workspace 2.Pinch zones is positioned at the central part of polished silicon wafer, along the radially extension of polished silicon wafer, the center of pinch zones has connecting hole 11.The workspace mainly comprises two continuous

conical surfaces

21,22, links to each other by circular arc R at the bottom of the cone of the vertex of a cone that is positioned at the inboard conical surface 21 and the conical surface 22 in the outside adjacent with it; Link to each other by circular arc R with the periphery of pinch zones at the bottom of the cone of the conical surface 21.The conical surface 22 and polished silicon wafer radially between angle V be 80 °.During use, the end face of its workspace 2 (anchor ring) 3 contacts and polishes with work piece.

Above-described

embodiment

1 and 2 two grid polished silicon wafer of embodiment manufacturing process are: first the glass fiber mesh sheet is applied upper resin liquid uniformly, and then be stained with uniformly abrasive material, be placed on pressed sizing in the mould again, then baking hardening gets final product in shaper.In the constant situation of polishing condition, workspace and polished silicon wafer radially between angle V when larger, the grinding force that the utility model is subject in use increases gradually, improve the service life of product gradually.

Claims

1. polished silicon wafer comprises pinch zones and workspace; Pinch zones is positioned at the central part of polished silicon wafer, along the radially extension of polished silicon wafer; The periphery of pinch zones links to each other with the inner ring of workspace; It is characterized in that, the workspace is along the extending radially outwardly of polished silicon wafer the time, and one side is extended along the polished silicon wafer axis to polished silicon wafer.

2. polished silicon wafer as claimed in claim 1 is characterized in that: workspace and polished silicon wafer radially between angle be 10 °-80 °.

3. polished silicon wafer as claimed in claim 2, it is characterized in that: the workspace is a curved surface.

4. polished silicon wafer as claimed in claim 2, it is characterized in that: the workspace is a conical surface.

5. polished silicon wafer as claimed in claim 2 is characterized in that: along polished silicon wafer radially from inside to outside, the workspace is to comprise at least two continuous conical surfaces, links to each other at the bottom of the cone of the vertex of a cone that is positioned at the inboard conical surface and the conical surface in the outside adjacent with it; Link to each other with the periphery of pinch zones at the bottom of the cone of the most inboard conical surface.