CN202633265U - High-dielectric voltage-withstanding power semiconductor module - Google Patents
High-dielectric voltage-withstanding power semiconductor module Download PDFInfo
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- CN202633265U CN202633265U CN 201220273618 CN201220273618U CN202633265U CN 202633265 U CN202633265 U CN 202633265U CN 201220273618 CN201220273618 CN 201220273618 CN 201220273618 U CN201220273618 U CN 201220273618U CN 202633265 U CN202633265 U CN 202633265U
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Abstract
The utility model relates to a high-dielectric voltage-withstanding power semiconductor module which belongs to the technical field of power semiconductor devices, and is mainly used for solving the problem that the dielectric withstanding voltage of the conventional power semiconductor module cannot reach 4500V and above. The high-dielectric voltage-withstanding power semiconductor module is mainly characterized in that a round boss is arranged on a part of a heat dissipation bottom plate in the way of corresponding to a chip, a bottom plate insulating film is arranged on the periphery of the boss, the diameter of the boss is smaller than the diameter of an insulating heat-conducting fin, and the height of the boss is larger than the thickness of the bottom plate insulating film; an insulating plate and a pressing plate insulating film are arranged between the chip and a pressing plate; a gate pole block for fixing a gate pole piece is arranged in a shell; and the bottom plate insulating film, the insulating heat-conducting fin, an electrode lower end, the chip and a pressing block are positioned in a silicon layer or a silicon rubber layer. The high-dielectric voltage-withstanding power semiconductor module has the characteristics that the dielectric withstanding voltage reaches above 4500V, and the high dielectric voltage-withstanding requirements of soft start, frequency conversion, reactive power compensation and other equipment on the module are satisfied; and the module is mainly used for high-dielectric voltage-withstanding power semiconductor modules.
Description
Technical field
The utility model belongs to power semiconductor modular manufacturing technology field.Particularly relate to a kind of power electronic equipment that is applied to, to the demanding power semiconductor modular of insulation module.
Background technology
At present; Power semiconductor modular mostly coagulates (rubber) glue-line by the silicon of filling in shell, radiating bottom plate, electrode, chip, insulating heat-conductive sheet, briquetting, pressing plate, trip bolt, gate pole sheet and the shell and constitutes, and dielectric voltage withstand is generally at 2500V (AC value).Along with the extensive application of environment protection energy-saving equipment, primary voltage improves constantly, and 380V, 660V, 1100V system are arranged; It is increasingly high to the requirement of withstand voltage of semiconductor device to make the field at soft starter for motor, frequency conversion, reactive-load compensation equipment, and power semiconductor modular is as the critical component in the equipment, and 2200V repetitive peak voltage can not satisfy the demands; If adopt the module serial connection technology, need to consider all problems such as pressures, the cost increase; Equipment volume increases; So adopt the above high-pressure modular of repetitive peak voltage 2500V just can address the above problem well at present usually, but dielectric strength does not often reach requirement between this module manufacturing technology chip and the radiating bottom plate, the dielectric strength at pressing plate, trip bolt, electrode, briquetting position is also not enough; The measure of taking at present is increase insulating heat-conductive layer thickness or smears silastic material at key position and solve; But this method thermal resistance can increase, and through-current capability just reduces, and can not guarantee stable rate of finished products in addition.
Summary of the invention
The purpose of the utility model is exactly to above-mentioned weak point and provide a kind of power semiconductor modular dielectric voltage withstand that makes to reach more than the 4500V, can satisfy in the equipment such as soft start, frequency conversion and reactive power compensation the power semiconductor modular that module is had the high dielectric voltage withstand demand.
The technical solution of the utility model is: a kind of high dielectric voltage withstand power semiconductor modular; Comprise the silicon gel layer or the silastic-layer of filling in shell, radiating bottom plate, electrode, chip, insulating heat-conductive sheet, briquetting, pressing plate, trip bolt, gate pole sheet, auxiliary cathode, gate lead, nut, epoxy layer and the shell; It is characterized in that: position corresponding with chip on described radiating bottom plate is provided with round boss; On the radiating bottom plate surface around the boss, be provided with the base plate dielectric film; This boss diameter is less than the diameter of insulating heat-conductive sheet, and the boss height is greater than the thickness of base plate dielectric film; Between chip and pressing plate, be provided with insulation board, pressing plate dielectric film; Be provided with the gate pole piece of fixed gate pole piece in the enclosure; Base plate dielectric film, insulating heat-conductive sheet, electrode lower end, chip, briquetting are positioned among silicon gel layer or the silastic-layer.
The profile of the pressing plate dielectric film described in the technical solution of the utility model is greater than the profile of pressing plate, and the location hole on the pressing plate dielectric film is identical with location hole on the pressing plate and overlap.
Base plate dielectric film described in the technical solution of the utility model, pressing plate dielectric film are base plate dielectric film, the pressing plate dielectric film of the insulation material of heatproof more than 200 ℃.
Base plate dielectric film described in the technical solution of the utility model, pressing plate dielectric film are base plate dielectric film, the pressing plate dielectric film of polytetrafluoroethylene, silicon rubber, polyester imines or polyimides material.
The diameter of the insulating heat-conductive sheet described in the technical solution of the utility model is greater than the diameter of electrode and chip contact site.
Insulating heat-conductive sheet described in the utility model technical solution is Be
2O
3/ Al
2O
3The insulating heat-conductive sheet of/AlN/DBC material.
Chip described in the utility model technical solution is controllable silicon or the rectifier tube chip that is used for the electric and electronic power device.
The utility model is because on the basis of existing power semiconductor modular; Position corresponding with chip on described radiating bottom plate is provided with round boss; On the radiating bottom plate surface around the convex platform, be provided with the base plate dielectric film, this boss diameter is less than the diameter of insulating heat-conductive sheet, and the boss height is greater than the thickness of base plate dielectric film; Between chip and pressing plate, be provided with insulation board, pressing plate dielectric film; Be provided with the gate pole piece of fixed gate pole piece in the enclosure, base plate dielectric film, insulating heat-conductive sheet, electrode lower end, chip, briquetting are positioned among silicon gel layer or the silastic-layer, thereby increase the insulating heat-conductive layer thickness or smear silastic material at key position need not; Dielectric voltage withstand >=the 4500V between electrode and the radiating bottom plate can be made, the single tube, series connection, common anode or the common cathode module that satisfy different electric pressures can be manufactured.The utility model can adopt the controllable silicon or the rectifier tube chip of any electric pressure; Main purpose is to improve the dielectric voltage withstand of module; After taking present technique, guaranteeing that suitably attenuate insulating heat-conductive layer thickness is to reduce thermal resistance and to improve through-current capability under the situation about not crushed.The utlity model has the power semiconductor modular dielectric voltage withstand is reached more than the 4500V, can satisfy in the equipment such as soft start, frequency conversion and reactive power compensation the characteristics that module had the high dielectric voltage withstand demand.The utility model is mainly used in the power semiconductor modular in the power electronic equipment of high insulating requirements.
Description of drawings
Fig. 1 is the vertical section structural map of the utility model structure.
Fig. 2 is the structural representation of the utility model radiating bottom plate.
Fig. 3 is the vertical view of Fig. 2.
Fig. 4 is the utility model base plate dielectric film sketch map.
Fig. 5 is the vertical view of Fig. 4.
Fig. 6 is the structural representation of the utility model pressing plate.
Fig. 7 is the utility model pressing plate dielectric film sketch map.
Fig. 8 is the vertical view of Fig. 7.
Fig. 9 is the internal electrical connection layout that the utility model can be made.
Figure 10 is that the DBC of the utility model structure uses the vertical section structural map.
Figure 11 is the utility model DBC.
Embodiment
The utility model structure such as Fig. 1 are to shown in Figure 11.The silicon of used auxiliary equipment shell 2, insulating heat-conductive sheet 4, electrode 5, chip 6, briquetting 7, auxiliary cathode 8, insulation board 9, pressing plate 11, trip bolt 12, gate lead 13, gate pole sheet 14, gate pole piece 15, interior filling coagulates basic identical in (rubber) glue-line 16, epoxy layer 17 and nut 18 and the existing power semiconductor modular.Different is: on radiating bottom plate 1, be provided with round boss with chip 6 corresponding positions; On radiating bottom plate 1 surface around the convex platform, be provided with base plate dielectric film 3; This boss diameter phi 1 is less than the diameter phi 2 of insulating heat-conductive sheet 4, and boss height H 1 is greater than the thickness H2 of base plate dielectric film 3; The diameter of insulating heat-conductive sheet 4 is greater than the diameter of electrode 5 with chip 6 contacts site; Between chip 6 and pressing plate 11, be provided with insulation board 9, pressing plate dielectric film 10; In shell 2, be provided with the gate pole piece 15 of fixing 2 gate pole sheets 14; Base plate dielectric film 3, insulating heat-conductive sheet 4, electrode 5 lower ends, chip 6, briquetting 7 are positioned among silicon gel layer or the silastic-layer 16.Chip 6 is for being used for the controllable silicon or the rectifier tube chip of electric and electronic power device.
Insulating heat-conductive sheet 4 is placed on the boss of radiating bottom plate 1; Be electrode 5, chip 6, briquetting 7, auxiliary cathode 8, insulation board 9, pressing plate dielectric film 10, pressing plate 11 then successively; Compress with trip bolt 12; Gate lead 13 and auxiliary cathode 8 are connected to gate pole sheet 14, and gate pole sheet 14 is fixed on the gate pole piece 15.Chip 6 is if diode is then cancelled auxiliary cathode, gate lead and gate pole sheet; If single diode or two chips all are diodes, then also should cancel the gate pole piece.
Pressing plate dielectric film 10 is placed on below the pressing plate 11, on the pressing plate dielectric film 10 location hole is arranged, and pressing plate dielectric film 10 shapes and pressing plate 11 are similar but size is bigger, and location hole and pressing plate 11 are identical and overlap, and trip bolt 12 passes from location hole.This laminated sheet dielectric film 10 mainly is electrode 5 or briquettings 7 sparkings that prevent below pressing plate 11 and the insulation board 9.
Module can be single tube, series connection, common anode or the common cathode module of thyristor, also can be single tube, series connection, common anode or the common cathode module of diode, also can be series connection, common anode or common cathode module that thyristor and diode mix.
Base plate dielectric film 3 adopts the insulating material of heatproof more than 200 ℃ with pressing plate dielectric film 10, and like materials such as polytetrafluoroethylene, silicon rubber, polyester imines or polyimides, the method that adopts spraying, pastes or install realizes.
Insulating heat-conductive sheet 4 is Be
2O
3/ Al
2O
3The insulating heat-conductive sheet of/AlN/DBC material.The DBC structure is the copper layer 19,21 on ceramic substrate 20 and upper and lower surface thereof.
Manufacturing process:
1, chip: thyristor and the diode chip for backlight unit that can select any electric pressure for use;
2, module assembling: radiating bottom plate, base plate dielectric film, insulating heat-conductive sheet, electrode, chip, briquetting, auxiliary cathode, insulation board etc. are fitted together successively, compress with pressing plate and trip bolt;
3, fastening: as, various parts to be compressed with the forcing press pressurization;
4, encapsulation: between shell and radiating bottom plate, use fluid sealant, gate pole sheet and plastic casing are installed, welding gate pole sheet, the room temperature or 50～80 ℃ of curing of heating, 4～10 hours curing times; Perfusion silicon coagulates (rubber) glue in module, and vacuum row bubble is handled 50～80 ℃ of curing of heating, 4～10 hours curing times; In module, pour into epoxy, vacuum row bubble is handled 80～100 ℃ of curing of heating, 4～10 hours curing times;
5, high temperature storage: storage is more than 72 hours in 70～100 ℃ of baking ovens;
6, test: with parameters such as the repetitive peak voltage of various device test products, gate pole, pressure drop, insulation voltage, on state currents.
Insulation voltage Viso:4500V
It only is a kind of in numerous models that the utility model gives an actual example, and other model structure is similar with it.
Claims (7)
1. high dielectric voltage withstand power semiconductor modular; Comprise the silicon gel layer or the silastic-layer (16) of filling in shell (2), radiating bottom plate (1), electrode (5), chip (6), insulating heat-conductive sheet (4), briquetting (7), pressing plate (11), trip bolt (12), gate pole sheet (14), auxiliary cathode, gate lead, nut, epoxy layer and the shell; It is characterized in that: go up at described radiating bottom plate (1) and be provided with round boss with the corresponding position of chip (6); On radiating bottom plate (1) surface around the boss, be provided with base plate dielectric film (3); This boss diameter is less than the diameter of insulating heat-conductive sheet (4), and the boss height is greater than the thickness of base plate dielectric film (3); Between chip (6) and pressing plate (11), be provided with insulation board (9), pressing plate dielectric film (10); In shell (2), be provided with the gate pole piece (15) of fixed gate pole piece (14); Base plate dielectric film (3), insulating heat-conductive sheet (4), electrode (5) lower end, chip (6), briquetting (7) are positioned among silicon gel layer or the silastic-layer (16).
2. a kind of high dielectric voltage withstand power semiconductor modular according to claim 1; It is characterized in that: the profile of described pressing plate dielectric film (10) is greater than the profile of pressing plate (11), and the location hole on the pressing plate dielectric film (10) is identical with location hole on the pressing plate (11) and overlap.
3. a kind of high dielectric voltage withstand power semiconductor modular according to claim 1 and 2 is characterized in that: described base plate dielectric film (3), pressing plate dielectric film (10) are base plate dielectric film, the pressing plate dielectric film of the insulation material of heatproof more than 200 ℃.
4. a kind of high dielectric voltage withstand power semiconductor modular according to claim 3 is characterized in that: described base plate dielectric film (3), pressing plate dielectric film (10) are base plate dielectric film, the pressing plate dielectric film of polytetrafluoroethylene, silicon rubber, polyester imines or polyimides material.
5. a kind of high dielectric voltage withstand power semiconductor modular according to claim 1 and 2 is characterized in that: the diameter of described insulating heat-conductive sheet (4) is greater than the diameter of electrode (5) with chip (6) contact site.
6. a kind of high dielectric voltage withstand power semiconductor modular according to claim 1 and 2 is characterized in that: described insulating heat-conductive sheet (4) is Be
2O
3/ Al
2O
3The insulating heat-conductive sheet of/AlN/DBC material.
7. a kind of high dielectric voltage withstand power semiconductor modular according to claim 1 and 2 is characterized in that: described chip (6) is for being used for the controllable silicon or the rectifier tube chip of electric and electronic power device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220273618 CN202633265U (en) | 2012-06-12 | 2012-06-12 | High-dielectric voltage-withstanding power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220273618 CN202633265U (en) | 2012-06-12 | 2012-06-12 | High-dielectric voltage-withstanding power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202633265U true CN202633265U (en) | 2012-12-26 |
Family
ID=47386423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220273618 Expired - Lifetime CN202633265U (en) | 2012-06-12 | 2012-06-12 | High-dielectric voltage-withstanding power semiconductor module |
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| CN (1) | CN202633265U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448900A (en) * | 2015-01-26 | 2016-03-30 | 湖北台基半导体股份有限公司 | High-frequency low-pressure-drop power semiconductor module |
| CN105633025A (en) * | 2014-10-31 | 2016-06-01 | 湖北台基半导体股份有限公司 | High insulation and voltage resistance power semiconductor module |
| CN106684074A (en) * | 2017-01-22 | 2017-05-17 | 嘉兴斯达半导体股份有限公司 | Novel pressure welding type power module |
| CN109003965A (en) * | 2018-08-24 | 2018-12-14 | 齐齐哈尔齐力达电子有限公司 | Thyristor module component |
| CN112311251A (en) * | 2020-09-18 | 2021-02-02 | 威海新佳电子有限公司 | Rectifier module |
-
2012
- 2012-06-12 CN CN 201220273618 patent/CN202633265U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633025A (en) * | 2014-10-31 | 2016-06-01 | 湖北台基半导体股份有限公司 | High insulation and voltage resistance power semiconductor module |
| CN105448900A (en) * | 2015-01-26 | 2016-03-30 | 湖北台基半导体股份有限公司 | High-frequency low-pressure-drop power semiconductor module |
| CN105448900B (en) * | 2015-01-26 | 2019-02-26 | 湖北台基半导体股份有限公司 | A kind of high frequency low voltage drop power semiconductor modular |
| CN106684074A (en) * | 2017-01-22 | 2017-05-17 | 嘉兴斯达半导体股份有限公司 | Novel pressure welding type power module |
| CN106684074B (en) * | 2017-01-22 | 2023-08-01 | 嘉兴斯达半导体股份有限公司 | Novel crimping type power module |
| CN109003965A (en) * | 2018-08-24 | 2018-12-14 | 齐齐哈尔齐力达电子有限公司 | Thyristor module component |
| CN109003965B (en) * | 2018-08-24 | 2023-12-08 | 齐齐哈尔齐力达电子有限公司 | Thyristor module assembly |
| CN112311251A (en) * | 2020-09-18 | 2021-02-02 | 威海新佳电子有限公司 | Rectifier module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121226 |
|
| CX01 | Expiry of patent term |