CN202583928U - Direct-current high voltage generating circuit for direct-current high voltage tester - Google Patents
Direct-current high voltage generating circuit for direct-current high voltage tester Download PDFInfo
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- CN202583928U CN202583928U CN 201220103046 CN201220103046U CN202583928U CN 202583928 U CN202583928 U CN 202583928U CN 201220103046 CN201220103046 CN 201220103046 CN 201220103046 U CN201220103046 U CN 201220103046U CN 202583928 U CN202583928 U CN 202583928U
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Abstract
The utility model discloses a direct-current high voltage generating circuit for a direct-current high voltage tester. The direct-current high voltage generating circuit for the direct-current high voltage tester comprises an input end filter circuit, a boost inductor, an insulated gate series module, a diode and a second capacitor, wherein the insulated gate series module comprises a plurality of insulated gate components connected in series and a driving circuit which drives the insulated gate components to work in a voltage-sharing mode and in series, the number of the insulated gate components connected in series depends on a voltage level of the direct-current high voltage tester which the direct-current high voltage generating circuit is applied to, a direct-current power supply is connected with a first end of the boost inductor through the input end filter circuit, a first end of the insulated gate series module and an anode of the diode are respectively connected with a second end of the boost inductor, a cathode of the diode is connected with a first end of the second capacitor, and a second end of the second capacitor and a second end of the insulated gate series module are grounded. An output of direct-current high voltage power is achieved through the plurality of the insulated gate components connected in series. The direct-current high voltage generating circuit for the direct-current high voltage tester is simple in circuit structure, high in efficiency and small in size.
Description
Technical field
The utility model relates to dc high voltage generation circuit, particularly relates to a kind of dc high voltage generation circuit that is used for the high direct voltage tester.
Background technology
In power equipment or research and teaching, factory, often need carry out high direct voltage (high pressure generally is meant the DC voltage of 1kV ~ 50kV) test here.The existing dc high voltage generation circuit that is used for the high direct voltage tester; Like patent announcement number is CN2443382Y; Name is called shown in the utility model patent of high direct voltage tester; Comprise current rectifying and wave filtering circuit, high-frequency inverter circuit, high-tension transformer and voltage doubling rectifing circuit etc., accomplish the conversion of alternating current to dc high-voltage through above-mentioned device.Accomplish conversion through a plurality of modules in the above-mentioned high direct voltage tester, conversion efficiency is lower.Comprise transformer in the circuit simultaneously, cause small product size bigger, cost is higher.
The utility model content
The utility model technical matters to be solved is: remedy the deficiency of above-mentioned prior art, propose a kind of dc high voltage generation circuit that is used for the high direct voltage tester, small product size is less, and efficient is higher.
The technical matters of the utility model solves through following technical scheme:
A kind of dc high voltage generation circuit that is used for the high direct voltage tester; Said high pressure is the DC voltage of 1kV ~ 50kV; Comprise input filtering circuit, boost inductance, insulated gate serial module structure, diode and second electric capacity; Said insulated gate serial module structure comprises a plurality of insulated gate devices that are connected in series and the driving circuit that drives each said insulated gate device series average-voltage work, and the number of the insulated gate device that is connected in series is confirmed according to the voltage level that said DC voltage produces the applied high direct voltage tester of circuit; Direct-current input power supplying connects first end of said boost inductance through said input filtering circuit; Second end of said boost inductance connects first end of said insulated gate serial module structure and the anode of said diode respectively; The negative electrode of said diode connects first end of said second electric capacity, the equal ground connection of second end of second end of said second electric capacity and said insulated gate serial module structure.
In the optimized technical scheme,
Said dc high voltage generation circuit is used for other high direct voltage tester of YkV level; The rated voltage of said insulated gate device is V1; The series connection number of said insulated gate device is the integral part of formula (
); Wherein, n is the adjusting allowance that rule of thumb is provided with.
Said n is 1,2 or 3.
Said dc high voltage generation circuit is used for other high direct voltage tester of 10kV level, and the rated voltage of said insulated gate device is 1700V, and said insulated gate serial module structure comprises 14 said insulated gate devices.
Said dc high voltage generation circuit is used for other high direct voltage tester of 2kV level, and the rated voltage of said insulated gate device is 1700V, and said insulated gate serial module structure comprises 3 said insulated gate devices.
Said input filtering circuit comprises first electric capacity, and first end of said first electric capacity connects said direct-current input power supplying, the second end ground connection of said first electric capacity.
Insulated gate device is IGBT or MOSFET in the said insulated gate serial module structure.
Driving circuit comprises reference signal generator, comparison amplifying circuit and feedback circuit in the said insulated gate serial module structure; The input end of said reference signal generator is the control input end of said driving circuit, and the output terminal of said reference signal generator links to each other with the said relatively reference voltage input terminal of amplifying circuit; The input end of said feedback circuit links to each other with the collector of said insulated gate device, and output terminal links to each other with the said relatively comparison signal input end of amplifying circuit; The said relatively output terminal of amplifying circuit links to each other with the grid of said insulated gate device.
The beneficial effect of the utility model and prior art contrast is:
The dc high voltage generation circuit of the utility model; Insulated gate serial module structure and Boost booster circuit are combined, and the insulated gate device through a plurality of series connection is realized the output of dc high-voltage, and circuit structure is simple; No longer relate to the conversion of AC/DC electricity in the circuit, efficient is higher.Meanwhile, do not need transformer in the circuit yet, make that the circuit overall volume is less.
Description of drawings
Fig. 1 is the circuit diagram of the dc high voltage generation circuit of the utility model embodiment one;
Fig. 2 is the structured flowchart of driving circuit in the dc high voltage generation circuit of the utility model embodiment one;
Fig. 3 is the output end voltage oscillogram that dc high voltage generation circuit emulation in PSPICE software obtains among Fig. 1;
Fig. 4 is the circuit diagram of the dc high voltage generation circuit of the utility model embodiment two;
Fig. 5 is the output end voltage oscillogram that dc high voltage generation circuit emulation in PSPICE software obtains among Fig. 4.
Embodiment
Below in conjunction with embodiment and contrast accompanying drawing the utility model is explained further details.
Embodiment one
As shown in Figure 1, be the dc high voltage generation circuit in this embodiment, comprise input filtering circuit 1, boost inductance L1, insulated gate serial module structure 2, diode D1 and second capacitor C 2.
Wherein, insulated gate serial module structure 2 comprises a plurality of insulated gate devices that are connected in series and the driving circuit that drives each insulated gate device series average-voltage work.Wherein, the number of the insulated gate device of series connection is confirmed according to the voltage level that DC voltage produces the high high direct voltage tester of circuit application.Be specially; Be used for other high direct voltage tester of YkV level like dc high voltage generation circuit; The rated voltage of insulated gate device is V1; Then the series connection number of insulated gate device is the integral part of formula (
); Wherein, n is the adjusting allowance that rule of thumb is provided with, and is generally 1,2 or 3.The insulated gate device series connection number of confirming according to this method is X, and the voltage after then X insulated gate device connected is X*V1, and 50% of its value must then can be used in other high direct voltage tester of YkV level greater than YkV.
In this embodiment; Dc high voltage generation circuit need be applied to other high direct voltage tester of 10kV level, is that rated voltage is the IGBT of 1700V and insulated gate device is selected for use, and is higher because of the voltage level of 10kV again; Voltage level is high more then leaves and takes higher surplus; Therefore regulating surplus n is set to 3, and then calculating according to said method needs 14 IGBT to be connected in series, so insulated gate serial module structure 2 comprises 14 insulated gate device IGBT in this embodiment.In other embodiments, insulated gate device also can be selected MOSFET for use, and insulated gate device also can be selected the IGBT of other load voltage value for use, as long as the series connection number is confirmed according to the voltage level of the high direct voltage test of using.
In the dc high voltage generation circuit; Direct-current input power supplying VDC connects first end of boost inductance L1 through input filtering circuit 1; Second end of boost inductance L1 connects first end of insulated gate serial module structure 2 and the anode of diode D1 respectively; The negative electrode of diode D1 connects first end of second capacitor C 2, the equal ground connection of second end of second end of second capacitor C 2 and insulated gate serial module structure 2.Wherein, first end of second capacitor C 2 also is the output terminal VOUT of dc high voltage generation circuit, the output high direct voltage.Input filtering circuit 1 comprises that first end of first capacitor C, 1, the first capacitor C 1 connects direct-current input power supplying VDC, the second end ground connection of first capacitor C 1.Promptly, in other embodiments, also can realize filtering by means of other filtering circuit through capacitor C 1 performance filter action.
During work; Input filtering circuit 1 is used for ripple and the noise of filtering direct-current input power supplying VDC; Boost inductance L1 is as the energy conversion device; After 14 equal conductings of IGBT in the insulated gate serial module structure 2, boost inductance L1 converts the electric energy of direct-current input power supplying VDC into magnetic field energy and stores, after 14 IGBT in the insulated gate serial module structure 2 break off; Inductance L 1 converts the magnetic field energy that stores into electric energy, obtains level and smooth DC voltage after the electric energy of this conversion and the filtering of direct-current input power supplying VDC voltage stack back through diode D1 and capacitor C 2 and exports from output terminal VOUT.Convert electric energy stack back formation into because the voltage of output terminal VOUT output is the magnetic field energy of direct-current input power supplying VDC and inductance, so output voltage is higher than input voltage, completion is boosted.And insulated gate serial module structure 2 is connected in series by the IGBT of 14 series average-voltages and forms, and therefore can realize high pressure output, and output end voltage is approximately equal to 14*1700V*50%=11.9kV, promptly can be used for the high direct voltage tester of 10kV.The dc high voltage generation circuit of this embodiment is placed on emulation under the PSPICE software, and it is following that parameter is set in software during emulation: direct-current input power supplying VDC=300V, the first capacitor C 1=16400 μ F; Boost inductance L1=500 μ H; Insulated gate device IGBT is the 1700V rated voltage, and the ON time dutycycle is 5%, the second capacitor C 2=50 μ F/14kV when regulating its work; The voltage waveform that obtains output terminal VOUT is as shown in Figure 3; The longitudinal axis is represented voltage, the transverse axis express time, and visible output end voltage reaches 10kV gradually from figure.
In this embodiment; Be applied to the dc high voltage generation circuit of high direct voltage tester; The insulated gate serial module structure is formed novel Boost booster circuit with boost inductance, diode, filter capacitor C1, C2, and through the output of a plurality of insulated gate devices realization dc high-voltages that are connected in series, circuit structure is simple; No longer relate to the conversion of AC/DC electricity in the circuit, efficient is higher.Meanwhile, do not need transformer in the circuit yet, make that the circuit overall volume is less.
In this embodiment, the circuit structure of driving circuit is as shown in Figure 2 in the insulated gate serial module structure 2.Driving circuit includes reference signal generator 101, compares amplifying circuit 102 and feedback circuit 103; The input end of reference signal generator 101 is the control input end of driving circuit; Reception is from the control signal of prime control circuit output; The output terminal of reference signal generator 101 links to each other with the reference voltage input terminal that compares amplifying circuit 102, to comparing amplifying circuit 102 input reference voltage signal Vref; The input end of feedback circuit 103 links to each other with the collector of insulated gate device IGBT, and output terminal links to each other with the comparison signal input end that compares amplifying circuit 102.Relatively amplifying circuit 102 compares the collector emitter voltage Vce of the insulated gate device IGBT after reference voltage signal Vref and the feedback, and comparative result is amplified output.Relatively the output terminal of amplifying circuit 102 is the control signal output ends of driving circuit, links to each other output signal controlling insulated gate device IGBT steady operation with the grid of insulated gate device.Each IGBT is connected in series in the insulated gate serial module structure 2, and under the drive controlling of above-mentioned driving circuit, series average-voltage work cooperates the work of boost inductance, diode, filter capacitor C1, C2, forms novel Boost booster circuit, produces high direct voltage output.And can know according to the principle of work of Boost booster circuit, through regulating the conducting turn-off time of each IGBT, i.e. the value of the high direct voltage of the output of scalable dc high voltage generation circuit output terminal.
Embodiment two
As shown in Figure 3, be the dc high voltage generation circuit in this embodiment.This embodiment is with the difference of embodiment one: in this embodiment, be applied to other high direct voltage tester of 2kV level, so comprise 3 insulated gate device IGBT that are connected in series in the insulated gate serial module structure 2.
As shown in Figure 3, dc high voltage generation circuit comprises input filtering circuit 1, boost inductance L1, insulated gate serial module structure 2, diode D1 and second capacitor C 2 in this embodiment.
Because the dc high voltage generation circuit of this practical implementation need be applied to other high direct voltage tester of 2kV level; It is the IGBT of 1700V that insulated gate device is still selected rated voltage for use; Relatively low because of the voltage level of 2kV again; Therefore adjustings surplus n rule of thumb is set is set to 1 and gets final product, then calculate 3 IGBT of need and be connected in series, so insulated gate serial module structure 2 comprises 3 insulated gate device IGBT in this embodiment according to preceding method.In other embodiments, insulated gate device also can be selected MOSFET for use, and insulated gate device also can be selected the IGBT of other load voltage value for use, as long as the series connection number is confirmed according to the voltage level of the high direct voltage test of using.
In this embodiment; Identical in the annexation of assemblies such as input filtering circuit 1, boost inductance L1, insulated gate serial module structure 2, diode D1 and second capacitor C 2 and the embodiment; The course of work of the dc high voltage generation circuit that is formed by connecting also with embodiment one in identical, in this no longer repeat specification.The dc high voltage generation circuit of this embodiment is placed on emulation under the PSPICE software, and it is following that parameter is set in software during emulation: direct-current input power supplying VDC=70V, the first capacitor C 1=16400 μ F; Boost inductance L1=500 μ H; Insulated gate device IGBT is the 1700V rated voltage, and the ON time dutycycle is 2%, the second capacitor C 2=50 μ F/14kV when regulating its work; The voltage waveform that obtains output terminal VOUT is as shown in Figure 5; The longitudinal axis is represented voltage, the transverse axis express time, and visible output end voltage reaches 2kV gradually from figure.
Identical with embodiment one, the dc high voltage generation circuit of this embodiment, the output high direct voltage, circuit structure is simple, no longer relates to the conversion of AC/DC electricity in the circuit, and efficient is higher.Do not need transformer in the circuit yet, make that the circuit overall volume is less.
Above content is the further explain that combines concrete preferred implementation that the utility model is done, and can not assert that the practical implementation of the utility model is confined to these explanations.For the those of ordinary skill of technical field under the utility model, make some substituting or obvious modification under the prerequisite of the utility model design not breaking away from, and performance or purposes are identical, all should be regarded as belonging to the protection domain of the utility model.
Claims (8)
1. dc high voltage generation circuit that is used for the high direct voltage tester; Said high pressure is the DC voltage of 1kV ~ 50kV; It is characterized in that: comprise input filtering circuit (1), boost inductance (L1), insulated gate serial module structure (2), diode (D1) and second electric capacity (C2); Said insulated gate serial module structure (2) comprises a plurality of insulated gate devices that are connected in series and the driving circuit that drives each said insulated gate device series average-voltage work, and the number of the insulated gate device that is connected in series is confirmed according to the voltage level that said DC voltage produces the applied high direct voltage tester of circuit; Direct-current input power supplying (VDC) connects first end of said boost inductance (L1) through said input filtering circuit (1); Second end of said boost inductance (L1) connects first end of said insulated gate serial module structure (2) and the anode of said diode (D1) respectively; The negative electrode of said diode (D1) connects first end of said second electric capacity (C2), the equal ground connection of second end of second end of said second electric capacity (C2) and said insulated gate serial module structure (2).
2. the dc high voltage generation circuit that is used for the high direct voltage tester according to claim 1; It is characterized in that: said dc high voltage generation circuit is used for other high direct voltage tester of YkV level; The rated voltage of said insulated gate device is V1; The series connection number of said insulated gate device is the integral part of formula (
); Wherein, n is the adjusting allowance that rule of thumb is provided with.
3. the dc high voltage generation circuit that is used for the high direct voltage tester according to claim 2 is characterized in that: said n is 1,2 or 3.
4. the dc high voltage generation circuit that is used for the high direct voltage tester according to claim 1; It is characterized in that: said dc high voltage generation circuit is used for other high direct voltage tester of 10kV level; The rated voltage of said insulated gate device is 1700V, and said insulated gate serial module structure (2) comprises 14 said insulated gate devices.
5. the dc high voltage generation circuit that is used for the high direct voltage tester according to claim 1; It is characterized in that: said dc high voltage generation circuit is used for other high direct voltage tester of 2kV level; The rated voltage of said insulated gate device is 1700V, and said insulated gate serial module structure (2) comprises 3 said insulated gate devices.
6. the dc high voltage generation circuit that is used for the high direct voltage tester according to claim 1; It is characterized in that: said input filtering circuit (1) comprises first electric capacity (C1); First end of said first electric capacity (C1) connects said direct-current input power supplying (VDC), the second end ground connection of said first electric capacity (C1).
7. the dc high voltage generation circuit that is used for the high direct voltage tester according to claim 1 is characterized in that: insulated gate device is IGBT or MOSFET in the said insulated gate serial module structure (2).
8. the dc high voltage generation circuit that is used for the high direct voltage tester according to claim 1; It is characterized in that: driving circuit comprises reference signal generator, comparison amplifying circuit and feedback circuit in the said insulated gate serial module structure (2); The input end of said reference signal generator is the control input end of said driving circuit, and the output terminal of said reference signal generator links to each other with the said relatively reference voltage input terminal of amplifying circuit; The input end of said feedback circuit links to each other with the collector of said insulated gate device, and output terminal links to each other with the said relatively comparison signal input end of amplifying circuit; The said relatively output terminal of amplifying circuit links to each other with the grid of said insulated gate device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220103046 CN202583928U (en) | 2012-03-19 | 2012-03-19 | Direct-current high voltage generating circuit for direct-current high voltage tester |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220103046 CN202583928U (en) | 2012-03-19 | 2012-03-19 | Direct-current high voltage generating circuit for direct-current high voltage tester |
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| CN202583928U true CN202583928U (en) | 2012-12-05 |
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| CN 201220103046 Expired - Lifetime CN202583928U (en) | 2012-03-19 | 2012-03-19 | Direct-current high voltage generating circuit for direct-current high voltage tester |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110018435A (en) * | 2019-02-21 | 2019-07-16 | 国网山东省电力公司临沂供电公司 | Electronic mutual inductor calibration system and calibration method |
-
2012
- 2012-03-19 CN CN 201220103046 patent/CN202583928U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110018435A (en) * | 2019-02-21 | 2019-07-16 | 国网山东省电力公司临沂供电公司 | Electronic mutual inductor calibration system and calibration method |
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| C14 | Grant of patent or utility model | ||
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| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518057 Guangdong city of Shenzhen province Nanshan District Song Ping Road No. 1 South Building 11 floor Liteon Patentee after: SHENZHEN BRONZE TECHNOLOGIES LTD. Address before: 518057 Guangdong city of Shenzhen province Nanshan District Song Ping Road No. 1 South Building 11 floor Liteon Patentee before: Shenzhen Bronze Technologies Ltd. |
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| TR01 | Transfer of patent right |
Effective date of registration: 20191018 Address after: 518000 Room 201, building B, shenfubao modern optical factory, No. 14, Jinxiu Middle Road, xiuxin community, Kengzi street, Pingshan District, Shenzhen City, Guangdong Province Patentee after: Shenzhen bronze sword Technology Co., Ltd. Address before: 518057 Guangdong city of Shenzhen province Nanshan District Song Ping Road No. 1 South Building 11 floor Liteon Patentee before: SHENZHEN BRONZE TECHNOLOGIES LTD. |
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| CX01 | Expiry of patent term |
Granted publication date: 20121205 |
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