CN202576558U - Selenylation and vulcanization reaction device of solar battery substrate - Google Patents

Selenylation and vulcanization reaction device of solar battery substrate Download PDF

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Publication number
CN202576558U
CN202576558U CN 201220134354 CN201220134354U CN202576558U CN 202576558 U CN202576558 U CN 202576558U CN 201220134354 CN201220134354 CN 201220134354 CN 201220134354 U CN201220134354 U CN 201220134354U CN 202576558 U CN202576558 U CN 202576558U
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China
Prior art keywords
reaction cavity
reaction
cavity body
substrate
outer chamber
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Expired - Fee Related
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CN 201220134354
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Chinese (zh)
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钱青
龚立光
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New Energy (shanghai) Co Ltd
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New Energy (shanghai) Co Ltd
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Abstract

The utility model discloses a selenylation and vulcanization reaction device of a solar battery substrate. The selenylation and vulcanization reaction device comprises an outer cavity body, a reaction cavity body, a plurality of heaters, a heat reflection layer and a conveyor, wherein the outer cavity body is provided with an outer cavity body inlet and an outer cavity body outlet which are used for entering and exiting of the substrate; the outer cavity body inlet and the outer cavity body outlet are respectively provided with an air-injection isolating device; the reaction cavity body positioned in the outer cavity body and is provided with a reaction cavity body inlet and a reaction cavity body outlet which are used for entering and exiting of the substrate; the reaction cavity body inlet and the reaction cavity body outlet are respectively provided with an air-injection isolating device; the reaction cavity body is provided with a selenium-steam pipe, a sulfur steam pipe and a gas discharging conveying pipe; the plurality of heaters are arranged outside the reaction cavity body; the heat reflection layer is coated outside the reaction cavity body; the heaters are positioned between the reaction cavity body and the heat reflection layer; and the conveyer is used for conveying the substrate to enter or exit the reaction cavity body. The selenylation and vulcanization reaction device disclosed by the utility model has the advantages that the selenylation and vulcanization reaction of the substrate can be realized, and the process requirement of the selenylation and vulcanization reaction is ensured.

Description

The selenizing of solar cell substrates and vulcanization reaction device
Technical field
The utility model relates to a kind of production unit of solar cell, particularly a kind of selenizing of copper indium gallium selenium solar cell substrate and vulcanization reaction device.
Background technology
Copper indium gallium selenium solar cell has distinguishing features such as production cost is low, pollution is little, do not fail, low light level performance is good; Photoelectric transformation efficiency occupies first of the various thin-film solar cells; Approach crystal silicon solar energy battery; Cost then is 1/3rd of a crystal silicon cell, is called the novel thin film solar cell in the world, but its requirement to technology and preparation condition is very high.
Copper-indium-galliun-selenium film solar cell adopts soda-lime glass, film be formed with the first step, the deposition molybdenum film forms hearth electrode; In second step, deposited copper indium gallium film forms preformed layer; In the 3rd step, generate the CIGS crystal by selenizing and vulcanization reaction; In the 4th step, form cadmium sulphide membrane; In the 5th step, form the summit very thin films.Wherein selenizing and the vulcanization reaction in the 3rd step and generate the copper-indium-galliun-selenium crystal are most important steps in the above several steps.Carry out selenizing in the existing copper indium gallium selenium solar cell production process and vulcanization reaction does not have special equipment, each producer makes corresponding apparatus according to its processing condition to realize selenizing and vulcanization reaction.
The utility model content
The purpose of the utility model is to provide a kind of selenizing and vulcanization reaction device of solar cell substrates, satisfies the selenizing and the vulcanization reaction needs of substrate in the copper-indium-galliun-selenium film solar cell production process.
For realizing above-mentioned purpose; The selenizing of the solar cell substrates of the utility model and vulcanization reaction device; Comprise: outer chamber, it is provided with outer chamber inlet and the outer chamber outlet that is used for the substrate turnover, is respectively equipped with jet disrupter in said outer chamber inlet and the outer chamber outlet; Be positioned at the intravital reaction cavity of said exocoel; It is provided with reaction cavity inlet and the reaction cavity outlet that is used for the substrate turnover; Be respectively equipped with jet disrupter in said reaction cavity inlet and the reaction cavity outlet, said reaction cavity is provided with selenium vapour pipe, sulphur vapour pipe and clears air shooter; Place the outer a plurality of well heaters of said reaction cavity; Be coated on the outer heat-reflecting layer of said reaction cavity, said well heater is between said reaction cavity and heat-reflecting layer; And carry substrate to pass in and out the transfer roller of said reaction cavity.
Said outer chamber is provided with bleeding point.
Adopt the selenizing and the vulcanization reaction device of the solar cell substrates of the utility model, can realize the selenizing and the vulcanization reaction of substrate, guarantee the processing requirement of selenizing and vulcanization reaction.Adopt the utility model, can also only be used as selenizing or vulcanization reaction.
Description of drawings
Fig. 1 is the selenizing and the vulcanization reaction schematic representation of apparatus of the solar cell substrates of the utility model.
Embodiment
Referring to Fig. 1, the selenizing of the solar cell substrates of the utility model and vulcanization reaction device comprise:
Outer chamber 10, it is provided with outer chamber inlet and the outer chamber outlet that is used for substrate 100 turnover, is respectively equipped with jet disrupter 11,12 in said outer chamber inlet and the outer chamber outlet;
Be positioned at the reaction cavity 20 of said outer chamber 10; It is provided with reaction cavity inlet and the reaction cavity outlet that is used for substrate 100 turnover; Be respectively equipped with jet disrupter 21,22 in said reaction cavity inlet and the reaction cavity outlet, said reaction cavity 20 is provided with selenium vapour pipe 40, sulphur vapour pipe 50 and clears air shooter 60;
Place a plurality of well heaters 23 outside the said reaction cavity 20;
Be coated on the heat-reflecting layer 30 outside the said reaction cavity 20, said well heater 23 is between said reaction cavity 20 and heat-reflecting layer 30; And
Carry the transfer roller 101 of the said reaction cavity 20 of substrate 100 turnover.
Said transfer roller 101 can be made up of a plurality of rollers or roller, and transfer roller 101 passes said outer chamber 10 and reaction cavity 20.Transfer roller 101 conveying substrates 100 get into reaction cavity 20 through outer chambers inlet and reaction cavity inlet, behind completion selenizing and the vulcanization reaction, export out through reaction cavity outlet and outer chamber.Outer chamber 10 is made up of metal, like stainless steel, carbon steel etc.
Said selenium vapour pipe 40 is connected a selenium vapour source 42 and sulphur vapour source 52 respectively with sulphur vapour pipe 50, is respectively applied for and in reaction cavity 20, carries selenium steam and sulphur steam.Be respectively equipped with a variable valve 41,51 on said selenium vapour pipe 40 and the sulphur vapour pipe 50, the adjustable flow perhaps can be closed corresponding variable valve when needs stop in reaction cavity 20, carrying selenium steam and/or sulphur steam.The said air shooter 60 that clears is used to import rare gas element or nitrogen, and effect is when selenylation reaction and vulcanization reaction switching, drains selenium steam residual in the clean reaction cavity 20 or sulphur steam.The said air shooter 60 that clears is provided with variable valve 61, the flow of adjustable input gas.
Said jet disrupter the 11,12,21, the 22nd is discharged under certain pressure and flow by certain gas; Form the pressure air film; Thereby the physical construction that stops extraneous gas to flow into; The jet disrupter 11,12,21,22 of the utility model adopts argon gas or other rare gas element, also can adopt nitrogen, and rare gas element or nitrogen get into jet disrupter 11,12,21,22 through reducing valve and flow-controlling meter; Effluent air has hindered extraneous gas and has entered into reaction cavity 20 from jet disrupter 11,12,21,22, thereby has guaranteed the purity requirement of process environments.
In the production process of solar cell; After forming copper indium gallium film preformed layer on the substrate 100; Copper indium gallium film preformed layer faces up; Through conveyer 101 substrate 100 is delivered into reaction cavity 20, this moment outer chamber 10 with reaction cavity 20 in preferably keep negative pressure, keep in said outer chamber 10 and the reaction cavity 20 negative pressure at 0.5KPa between the 100KPa.For keeping negative pressure, said outer chamber 10 is provided with the bleeding point 13 that links to each other with the vacuum fan (not shown).Outer chamber 10 is bled through bleeding point 13 through vacuum fan, forms negative pressure, and this moment, reaction cavity 20 also formed negative pressure.
, promptly heated substrate 100 after getting into reaction cavity 20 by reaction cavity 20 outside electrothermal devices 23.Well heater 23 can be resistance heating wire, infrared lamp etc.; The material of reaction cavity 20 can adopt metal such as stainless steel, carbon steel, aluminium etc.; Also can adopt non-metallic material such as graphite, pottery, well heater 23 heats the substrate 100 in the reaction cavity 20 through radiation and convection type.Certainly, reaction cavity 20 also can adopt transparent silica glass material to make, and can adopt the infrared lamp heating this moment, and ir radiation passes the reaction cavity 20 direct heating substrates 100 that silica glass is processed.Tamper 30 can make the heat of well heater 23 concentrate heated substrate, improves thermo-efficiency.
When substrate 100 is heated to a certain design temperature between 350 ℃ and 550 ℃; Open the variable valve 41 on the selenium steam pipe 40, the selenium steam in the selenium steam source 42 gets in the reaction cavity 20, and substrate 100 retains for some time in reaction cavity 20; Carry out selenylation reaction; This moment substrate 100 in reaction cavity 20 on transfer roller 101, can stop motionless, or reciprocal back and forth, or straight ahead.According to processing requirement, the variable valve 41 on the adjustable selenium steam pipe 40 is regulated the selenium steam flow.
Certain hour before selenylation reaction technology is accomplished is closed the variable valve 41 on the selenium steam pipe 40, lets residual selenium steam reaction finish.Before getting into next step sulfuration process; Feed nitrogen or argon gas emptying then through clearing air shooter 60; This step can repeat repeatedly; Clear gas just nitrogen or this step of argon gas through input, can the residual selenium steam in the reaction cavity 20 all be discharged, get into vulcanization reaction technology then.
When substrate 100 is heated to a certain design temperature between 450 ℃ and 600 ℃; Open the variable valve 51 on the sulfur vapor pipe 50; Sulfur vapor in the sulfur vapor source 52 gets into reaction cavity 20, carries out vulcanization reaction, and this moment, the substrate 100 in reaction cavity 20 can stop motionless on transfer roller 101; Or reciprocal back and forth, or straight ahead.According to processing requirement, the variable valve 51 on the adjustable sulfur vapor pipe 50 is regulated the sulfur vapor flow.
Certain hour before vulcanization reaction technology is accomplished is closed the variable valve 51 on the sulfur vapor pipe 50, lets the residual sulphur vapor reaction finish.
Before getting into next step selenizing technology; Feed nitrogen or argon gas emptying then through clearing air shooter 60; This step can repeat repeatedly; Clear gas just nitrogen or this step of argon gas through input, can the residual sulphur steam in the reaction cavity 20 all be discharged, for next step selenylation reaction is got ready.
After above-mentioned vulcanization reaction technology was accomplished, substrate 100 temperature dropped to about 350 degree, and substrate 10 is exported from reaction cavity 20, outer chamber 10 through transfer roller 101, and selenizing and vulcanization reaction technology finish.

Claims (4)

1. the selenizing of a solar cell substrates and vulcanization reaction device is characterized in that, comprising:
Outer chamber (10), it is provided with outer chamber inlet and the outer chamber outlet that is used for substrate (100) turnover, is respectively equipped with jet disrupter (11,12) in said outer chamber inlet and the outer chamber outlet;
Be positioned at the reaction cavity (20) of said outer chamber (10); It is provided with reaction cavity inlet and the reaction cavity outlet that is used for substrate (100) turnover; Be respectively equipped with jet disrupter (21,22) in said reaction cavity inlet and the reaction cavity outlet, said reaction cavity (20) is provided with selenium vapour pipe (40), sulphur vapour pipe (50) and clears air shooter (60);
Place the outer a plurality of well heaters (23) of said reaction cavity (20);
Be coated on the outer heat-reflecting layer (30) of said reaction cavity (20), said well heater (23) is positioned between said reaction cavity (20) and the heat-reflecting layer (30); And
Carry substrate (100) to pass in and out the transfer roller (101) of said reaction cavity (20).
2. the selenizing of solar cell substrates as claimed in claim 1 and vulcanization reaction device is characterized in that, said outer chamber (10) is provided with bleeding point (13).
3. according to claim 1 or claim 2 the selenizing and the vulcanization reaction device of solar cell substrates is characterized in that said well heater (23) is resistance heating wire or infrared lamp.
4. according to claim 1 or claim 2 the selenizing and the vulcanization reaction device of solar cell substrates is characterized in that said reaction cavity (20) adopts wherein a kind of material of stainless steel, carbon steel, aluminium, graphite, silica glass and pottery to process.
CN 201220134354 2012-04-01 2012-04-01 Selenylation and vulcanization reaction device of solar battery substrate Expired - Fee Related CN202576558U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220134354 CN202576558U (en) 2012-04-01 2012-04-01 Selenylation and vulcanization reaction device of solar battery substrate

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Application Number Priority Date Filing Date Title
CN 201220134354 CN202576558U (en) 2012-04-01 2012-04-01 Selenylation and vulcanization reaction device of solar battery substrate

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103361628A (en) * 2012-04-01 2013-10-23 英莱新能(上海)有限公司 Solar cell substrate selenization and sulfurization reactor
CN104282801A (en) * 2013-07-10 2015-01-14 台积太阳能股份有限公司 Apparatus and methods for forming thin film solar cell materials

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103361628A (en) * 2012-04-01 2013-10-23 英莱新能(上海)有限公司 Solar cell substrate selenization and sulfurization reactor
CN103361628B (en) * 2012-04-01 2016-06-08 英莱新能(上海)有限公司 The seleniumization of solar cell substrates and vulcanization reaction device
CN104282801A (en) * 2013-07-10 2015-01-14 台积太阳能股份有限公司 Apparatus and methods for forming thin film solar cell materials
CN104282801B (en) * 2013-07-10 2017-06-13 台湾积体电路制造股份有限公司 Apparatus and method for forming thin-film solar cells material

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