CN202549322U - Interlayer structure battery based on liquid semiconductor - Google Patents
Interlayer structure battery based on liquid semiconductor Download PDFInfo
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- CN202549322U CN202549322U CN2012200770741U CN201220077074U CN202549322U CN 202549322 U CN202549322 U CN 202549322U CN 2012200770741 U CN2012200770741 U CN 2012200770741U CN 201220077074 U CN201220077074 U CN 201220077074U CN 202549322 U CN202549322 U CN 202549322U
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Abstract
The utility model relates to an interlay structure battery based on a liquid semiconductor, comprising a substrate, a metal layer, a liquid semiconductor, an insulating material, a radioactive metal and a non-radioactive metal, wherein the radioactive metal and the non-radioactive metal form an integral structure, the radioactive metal is arranged at the middle of the non-radioactive metal, the insulating material, the metal layer and the substrate are orderly arranged on the upper and lower surfaces of the integral structure from the near to the distant, the insulating material is provided with a hollow structure, the liquid semiconductor is arranged inside the cavity of the insulating material, the radioactive metal and the liquid semiconductor form Schottky contact or ohmic contact, and the metal layer and the liquid semiconductor form ohmic contact or Schottky contact. The interlayer structure battery based on a liquid semiconductor can resolve the problems of being severe in semiconductor radiation damage and short in battery service life, employs a liquid semiconductor and a radioactive source type isotope source with a long service life, and is provided with an interlay structure, thereby comprehensively increasing the output performance of the battery and the application value of the battery.
Description
Technical field
The utility model belongs to little energy field, especially relates to a kind of sandwich construction nuclear battery based on liquid semiconductor, can be used for radioisotopic decay can be converted into electric energy.
Background technology
Microminiaturized, integrated is the megatrend of current technical development, and energy supply has become the bottleneck of restriction MEMS (MEMS) development, and its miniaturization issues receives widely and paying attention to.Common little energy has micro solar battery, micro fuel cell etc.; Because the life-span is short, affected by environment big etc.; Be difficult to satisfy the requirement of MEMS, and nuclear battery can remedy these deficiencies with its special advantages to the energy; And be prone to microminiaturized, be easy to the MEMS important directions that has become little energy research such as integrated, and all have broad application prospects in medical science, military affairs, aviation, general domestic field etc.
2009, Wacharasindhu etc. reported a kind of method that adopts liquid semiconductor selenium to prepare nuclear battery, and the result who obtains is: open-circuit voltage is V
OC=899mV, short-circuit current are I
SC=0.107 μ A, peak power output P
Max=16.2nW; Energy transformation ratio is=1.24% (T. Wacharasindhu; J.W. Kwon, D.E. Meier, J.D. Robertson. Liquid-semiconductor-based micro power source using radioisotope energy conversion. Solid-State Sensors; Actuators and Microsystems Conference, 2009. TRANSDUCERS, 2009. International.).The radioactive source that this nuclear battery adopts does
35S, its half life period only has 87 days, is difficult to give play to the long-life advantage of nuclear battery, and the long-life radioactive source of choosing other types is difficult to and the selenium eutectic forms the lower liquid semiconductor of fusing point, this is a big defective of this nuclear battery design.
2011, Qiao etc. reported a kind of nuclear battery based on wide bandgap semiconductor 4H-SiC, and the radioactive source of employing does
63Ni with
241Am; The energy transformation ratio that obtains is respectively 0.5% and 0.1% (D. Y. Qiao, X. J. Chen, Y. Ren; W. Z. Yuan. A Micro Nuclear Battery Based on SiC Schottky Barrier Diode [J]. J. Microelectromech. S. 201; 20 (3): although 685-690.) the semiconductor 4H-SiC radiation resistance of the energy converting structure of this nuclear battery use is strong, because be solid-state, radiation damage still can not be ignored.
The semiconductor that all both at home and abroad at present PN junctions or schottky junction nuclear battery adopt is solid-state basically, like Si, SiC etc.Although SiC is one of representative of third generation semiconductor technology, capability of resistance to radiation is strong, is solid-state, and radioisotopic decaying particle (β, α, γ etc.) can destroy the solid lattice, reduces the nuclear battery life-span.And present existing liquid semiconductor nuclear battery is too short because of the radioactive isotope power supply life-span of using, and is difficult to obtain practical application.
The utility model content
The technical matters that solves:The utility model mainly is in order to solve the serious and too short problem of battery life of semicoductor radiating damage; A kind of sandwich construction nuclear battery based on liquid semiconductor is provided; This battery adopts liquid semiconductor and long-life radioactive source type isotope source; And design sandwich construction, improve cell output comprehensively and promote its using value.
Technical scheme:
A kind of sandwich construction nuclear battery based on liquid semiconductor; Comprise substrate, metal level, liquid semiconductor, insulating material, radioactive metal and on-radiation metal; Said radioactive metal and on-radiation metal are structure as a whole, and radioactive metal is located in the middle of the on-radiation metal; Insulating material, metal level and substrate all from the close-by examples to those far off are located at the upper and lower surface of above-mentioned integrative-structure successively, and said insulating material is a hollow structure, and liquid semiconductor is located in the cavity of insulating material; Said radioactive metal and liquid semiconductor form Schottky contacts or Ohmic contact, metal level and liquid semiconductor form Ohmic contact or Schottky contacts; The area of said radioactive metal is consistent with the cavity contact area of insulating material; The long-pending sum of said radioactive metal and on-radiation metallic surface is consistent with substrate, metal level respectively; The surface area that circumferential profile is had jurisdiction at said insulating material and metal layer contacting position is less than the surface area of metal level.
Said liquid semiconductor material therefor contains VI family element, and said VI family element is oxygen, sulphur, selenium and tellurium.
Said liquid semiconductor material therefor is the eutectic amalgam of selenium, tellurium, VI family element or the alloy of VI family element and metal.
Said substrate is a glass, and the heatproof value of said glass is not less than 1000 ℃.
Said metal level is nickel or aluminium.
Said radioactive metal is radioactive metal nickel-63 or radioactive metal promethium-147.
Said on-radiation metal is on-radiation metallic nickel or on-radiation metal promethium.
Said insulating material is aluminium oxide ceramics, silicon nitride ceramics or silicon carbide ceramics.
Based on the preparation method of the sandwich construction nuclear battery of liquid semiconductor, comprise the steps: step 1, clean substrate, depositing metal layers on substrate, metal layer thickness is 1～2 μ m, as Ohmic contact or Schottky contacts; Step 2, on metal level, make a cavity that is surrounded by insulating material, cavity shape is cylindrical, rectangular parallelepiped, square or prism; Step 3, liquid semiconductor is loaded in the cavity; Step 4, loading one deck is coated with on liquid semiconductor and insulating material radioactive metal and on-radiation metal form Schottky contacts or Ohmic contact, prepare lower floor transducing unit; Step 5, prepare transducing unit, upper strata, and lower floor's transducing unit package of preparing with step 4 together, accomplishes the preparation of sandwich construction nuclear battery according to step 1,2,3.
Further, said liquid semiconductor is a P-type semiconductor, the work content of radioactive metal less than with liquid semiconductor, the work content of metal level is greater than liquid semiconductor.
Further, said liquid semiconductor is a P-type semiconductor, the work content of radioactive metal greater than with liquid semiconductor, the work content of metal level is less than liquid semiconductor.
Further, said liquid semiconductor is a N-type semiconductor, the work content of radioactive metal greater than with liquid semiconductor, the work content of metal level is less than liquid semiconductor.
Further, said liquid semiconductor is a N-type semiconductor, the work content of radioactive metal less than with liquid semiconductor, the work content of metal level is greater than liquid semiconductor.
Described in the utility model based on the sandwich construction nuclear battery of liquid semiconductor; Its principle of work is: radioactive metal (or metal level) forms schottky junction with liquid semiconductor; Near the built in field that produces; α, β or γ particle that the radioactive isotope power supply decay produces incide in the liquid semiconductor material, produce a large amount of electron hole pairs, and these electron hole pairs separate under the effect of built in field; Through forming electric current behind Ohmic contact (or Schottky contacts) electrode and Schottky contacts (or Ohmic contact) the electrode external load, promptly realize the transformation that decay can be arrived electric energy.Ohmic contact and Schottky contacts are corresponding relation.
Beneficial effect:
One, radioactive metal described in the utility model can play the effect that the decay ability is provided; Can play the effect that forms schottky junction (or Ohmic contact) again; Guarantee α, β or the loss-free direct entering liquid semiconductor of γ particle ability that decay produces; Increase the number of electron hole pair, finally promoted battery performance; Said in addition radioactive metal adopts the long-lived radioisotope source, has guaranteed that nuclear battery can work long hours.
What two, the said nuclear battery of the utility model adopted be sandwich construction, radioactive isotope power supply about between the two-layer transducing unit, guaranteed the utilization factor of Radioactive Source Decay particle to greatest extent.
Three, the utility model semiconductor material is adopted as liquid semiconductor, in this power supply, not only effective collection mechanism can be provided, and has remedied lattice degeneration common under the solid-state semiconductor conversion equipment pattern and damaged.In addition since semiconductor be the liquid state, its with electrode metal contact more tight, promptly semiconductor can " soak " metal surface fully, thereby has greatly reduced the contact resistance of Ohmic contact.
The sandwich construction nuclear battery based on liquid semiconductor that provides at last in sum has characteristics such as radiation resistance is strong, the life-span is long, technology is simple; And Radioactive Source Decay particle utilization factor is high; Can be used for to decay and directly to convert electric energy into, have broad application prospects.
Description of drawings
Fig. 1 is based on the sandwich construction nuclear battery synoptic diagram of liquid semiconductor;
Fig. 2 is based on the cross-sectional view of the sandwich construction nuclear battery of liquid semiconductor;
Label title among the figure:
The 1-substrate; The 2-metal level; The 3-liquid semiconductor; The 4-insulating material; The 5-radioactive metal; 6-on-radiation metal; 11-Ohmic contact (or Schottky contacts) electrode; 12-Schottky contacts (or Ohmic contact) electrode.
Embodiment
Be elaborated below in conjunction with the technical scheme of accompanying drawing to the utility model:
Fig. 1 and Fig. 2 have shown its basic structure, and Fig. 1 is a longitudinal sectional drawing, and Fig. 2 is a transverse cross-sectional view.As shown in the figure, the sandwich construction nuclear battery based on liquid semiconductor of the utility model comprises that the heatproof value is not less than 1000 ℃ glass substrate 1; Metallic nickel or aluminium lamination 2; Liquid semiconductor 3, insulating material 4: aluminium oxide ceramics, silicon nitride ceramics or silicon carbide ceramics, radioactive metal nickel
-63Or promethium
-1475, on-radiation metallic nickel or promethium 6; Said radioactive metal 5 is structure as a whole with on-radiation metal 6, and radioactive metal 5 is located in the middle of the on-radiation metal 6; Insulating material 4, metal level 2 and substrate 1 all from the close-by examples to those far off are located at the upper and lower surface of above-mentioned integrative-structure successively, and said insulating material is a hollow structure, and liquid semiconductor 3 is located in the cavity of insulating material; Said radioactive metal 5 forms Schottky contacts with liquid semiconductor 3 or Ohmic contact, metal level 2 and liquid semiconductor 3 form Ohmic contact or Schottky contacts; The area of said radioactive metal 5 is consistent with the cavity contact area of insulating material 4; The surface area sum of said radioactive metal 5 and on-radiation metal 6 is consistent with substrate 1, metal level 2 respectively; The surface area that circumferential profile is had jurisdiction over of said insulating material 4 and metal level 2 contacts site is less than the surface area of metal level 2.Above-mentioned liquid semiconductor 4 material therefors are the eutectic amalgam of selenium, tellurium, VI family element or the alloy of VI family element and metal, and said VI family element is oxygen, sulphur, selenium and tellurium.
Above-mentioned sandwich construction nuclear battery based on liquid semiconductor can prepare through following method:
Embodiment 1
(1) choosing anti-1000 ℃ of glass is substrate, does cleaning, deposition layer of metal aluminium on substrate, and thickness is 2 μ m, as Ohmic contact;
(2) on metallic aluminium, make a cavity that is surrounded by aluminium oxide ceramics, cavity shape is cylindrical, and cavity depth is 30 μ m;
(3) preparation sulphur tellurium eutectic melt, concrete method for making can as N type liquid semiconductor, be loaded into it in cavity referring to " V.M.Glazov, Liquid Semiconductors ";
(4) on sulphur tellurium eutectic amalgam and insulating material, load the radioactive metal nickel-63 and on-radiation metallic nickel that one deck is coated with, thickness is 4 μ m, forms Schottky contacts, prepares lower floor transducing unit;
(5) according to the structure of accompanying drawing 1, prepare transducing unit, upper strata, and lower floor's transducing unit package of preparing with step (4) together, accomplish the preparation of sandwich construction nuclear battery according to step (1), (2), (3).The area of radioactive metal nickel-63 is consistent with the cavity contact area of insulating material aluminium oxide ceramics 4; The surface area sum of radioactive metal nickel-63 and on-radiation metallic nickel is consistent with substrate, metal aluminium lamination respectively; The surface area that circumferential profile is had jurisdiction over of insulating material aluminium oxide ceramics and metal aluminium lamination contact site is less than the surface area of metal aluminium lamination.
Test result shows; Adopt every square centimeter of peak power output of the liquid semiconductor nuclear battery of sandwich construction to reach the milliwatt level; Energy transformation ratio is more than 5%, and can be on the time greater than nickel-63 half life period stable work, and need not to worry the problem that causes battery performance to descend because of radiation damage.
Embodiment 2
This instance and example 1 except that below several places different, other are all consistent.
(1) choosing anti-1000 ℃ of glass is substrate, does cleaning, deposition layer of metal nickel on substrate, and thickness is 2 μ m, as Schottky contacts;
(2) on metallic nickel, make a cavity that is surrounded by silicon nitride ceramics, cavity shape is the square bodily form, and cavity depth is 100 μ m;
(4) on sulphur tellurium eutectic amalgam and insulating material, load the radioactive metal promethium-147 and on-radiation metal promethium that one deck is coated with, thickness is 10 μ m, forms Ohmic contact, prepares lower floor transducing unit;
Test result shows; Adopt every square centimeter of peak power output of the liquid semiconductor nuclear battery of sandwich construction to reach the milliwatt level; Energy transformation ratio is more than 6%; And can be on time stable work greater than promethium-147 half life period, and need not to worry the problem that causes battery performance to descend because of radiation damage.
(1) choosing anti-1000 ℃ of glass is substrate, does cleaning, deposition layer of metal nickel on substrate, and thickness is 2 μ m, as Ohmic contact;
(2) on metallic nickel, make a cavity that is surrounded by silicon carbide ceramics, cavity shape is a cuboid, and cavity depth is 100 μ m;
(3) preparation liquid semiconductor selenium, concrete method for making can as P type liquid semiconductor, be loaded into it in cavity referring to " V.M.Glazov, Liquid Semiconductors ";
(4) on liquid semiconductor selenium and insulating material, load the radioactive metal promethium-147 and on-radiation metal promethium that one deck is coated with, thickness is 10 μ m, forms Schottky contacts, prepares lower floor transducing unit;
(5) according to the structure of accompanying drawing 1, prepare transducing unit, upper strata, and lower floor's transducing unit package of preparing with step (4) together, accomplish the preparation of sandwich construction nuclear battery according to step (1), (2), (3).The area of radioactive metal promethium-147 is consistent with the cavity contact area of insulating material silicon carbide ceramics 4; The surface area sum of radioactive metal promethium-147 and on-radiation metal promethium is consistent with substrate, metal nickel dam respectively; The surface area that circumferential profile is had jurisdiction over of insulating material silicon carbide ceramics and metal nickel dam contact site is less than the surface area of metal nickel dam.
Test result shows; Adopt every square centimeter of peak power output of the liquid semiconductor nuclear battery of sandwich construction to reach the milliwatt level; Energy transformation ratio is more than 7%; And can be on time stable work greater than promethium-147 half life period, and need not to worry the problem that causes battery performance to descend because of radiation damage.
Embodiment 4
This instance and example 3 except that below several places different, other are all consistent.
(1) choosing anti-1000 ℃ of glass is substrate, does cleaning, deposition layer of metal aluminium on substrate, and thickness is 2 μ m, as Schottky contacts;
(2) on metallic aluminium, make a cavity that is surrounded by aluminium oxide ceramics, cavity shape is prismatic, and cavity depth is 30 μ m;
(4) on liquid semiconductor selenium and insulating material, load the radioactive metal nickel-63 and on-radiation metallic nickel that one deck is coated with, thickness is 4 μ m, forms Ohmic contact, prepares lower floor transducing unit.
Test result shows; Adopt every square centimeter of peak power output of the liquid semiconductor nuclear battery of sandwich construction to reach the milliwatt level; Energy transformation ratio is more than 5%, and can be on the time greater than nickel-63 half life period stable work, and need not to worry the problem that causes battery performance to descend because of radiation damage.
Claims (1)
1. sandwich construction nuclear battery based on liquid semiconductor; It is characterized in that comprising substrate (1), metal level (2), liquid semiconductor (3), insulating material (4), radioactive metal (5) and on-radiation metal (6); Said radioactive metal (5) is structure as a whole with on-radiation metal (6), and radioactive metal (5) is located in the middle of the on-radiation metal (6); Insulating material (4), metal level (2) and substrate (1) all from the close-by examples to those far off are located at the upper and lower surface of above-mentioned integrative-structure successively, and said insulating material is a hollow structure, and liquid semiconductor (3) is located in the cavity of insulating material; Said radioactive metal (5) forms Schottky contacts with liquid semiconductor (3) or Ohmic contact, metal level (2) and liquid semiconductor (3) form Ohmic contact or Schottky contacts; The area of said radioactive metal (5) is consistent with the cavity contact area of insulating material (4); The surface area sum of said radioactive metal (5) and on-radiation metal (6) is consistent with substrate (1), metal level (2) respectively; The surface area that circumferential profile is had jurisdiction over of said insulating material (4) and metal level (2) contact site is less than the surface area of metal level (2).
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012200770741U CN202549322U (en) | 2012-03-05 | 2012-03-05 | Interlayer structure battery based on liquid semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012200770741U CN202549322U (en) | 2012-03-05 | 2012-03-05 | Interlayer structure battery based on liquid semiconductor |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102592696A (en) * | 2012-03-05 | 2012-07-18 | 南京航空航天大学 | Interlayer structure nuclear battery based on liquid semiconductor and preparation method thereof |
| CN104051051A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Epitaxy GaN serial type PIN structure alpha irradiation battery and manufacturing method thereof |
| CN104051042A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Parallel type PIN type beta irradiation battery and preparing method thereof |
| CN104051045A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Series-connection PIN-structure alpha irradiation battery and preparation method |
| CN104658628A (en) * | 2013-11-18 | 2015-05-27 | 胡寻伟 | Thermonuclear electric cell |
| CN104795120A (en) * | 2015-01-15 | 2015-07-22 | 上海紫电能源科技有限公司 | Thermonuclear cell |
-
2012
- 2012-03-05 CN CN2012200770741U patent/CN202549322U/en not_active Withdrawn - After Issue
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102592696A (en) * | 2012-03-05 | 2012-07-18 | 南京航空航天大学 | Interlayer structure nuclear battery based on liquid semiconductor and preparation method thereof |
| CN102592696B (en) * | 2012-03-05 | 2014-08-13 | 南京航空航天大学 | Interlayer structure nuclear battery based on liquid semiconductor and preparation method thereof |
| CN104658628A (en) * | 2013-11-18 | 2015-05-27 | 胡寻伟 | Thermonuclear electric cell |
| CN104051051A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Epitaxy GaN serial type PIN structure alpha irradiation battery and manufacturing method thereof |
| CN104051042A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Parallel type PIN type beta irradiation battery and preparing method thereof |
| CN104051045A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Series-connection PIN-structure alpha irradiation battery and preparation method |
| CN104051042B (en) * | 2014-06-29 | 2016-10-12 | 西安电子科技大学 | Parallel PIN-type β irradiation battery and preparation method thereof |
| CN104795120A (en) * | 2015-01-15 | 2015-07-22 | 上海紫电能源科技有限公司 | Thermonuclear cell |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20121121 Effective date of abandoning: 20140813 |
|
| RGAV | Abandon patent right to avoid regrant |