CN202534646U - Direct COB structure compatible for LED chips having different wavelength - Google Patents

Direct COB structure compatible for LED chips having different wavelength Download PDF

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Publication number
CN202534646U
CN202534646U CN2012200307834U CN201220030783U CN202534646U CN 202534646 U CN202534646 U CN 202534646U CN 2012200307834 U CN2012200307834 U CN 2012200307834U CN 201220030783 U CN201220030783 U CN 201220030783U CN 202534646 U CN202534646 U CN 202534646U
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China
Prior art keywords
chip
different wave
wave length
luminescence
luminescence chip
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CN2012200307834U
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Chinese (zh)
Inventor
郑信慧
詹朝贵
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TAICHOU CRYSTAL TECHNOLOGY Co Ltd
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TAICHOU CRYSTAL TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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Abstract

The utility model discloses a direct COB (Chip-on-Board) structure compatible for LED chips having different wavelength. According to the utility model, an electric conduction layer is arranged on a base material and the LED chips having the different wavelengths, different color temperatures and different packaging patterns are connected through the separation configuration of the electric conduction layer. Therefore, the electric connection of the LED chips having the different packaging patterns is realized, thereby forming a light emitting matrix. And at least one lens is arranged on the light emitting matrix to improve the light emitting efficiency, thereby realizing an effect of protecting the direct COB structure compatible for the LED chips having the different wavelength.

Description

The direct encapsulation architecture of chip that can compatible different wave length LED
Technical field
The utility model relates to a kind of encapsulation architecture, refer in particular to a kind of can compatible different wave length and the direct encapsulation architecture of led chip of colour temperature and different encapsulation kenels, can be applicable to the photosynthetic illumination that promotes that various plant cultivating and agricultural are used.
Background technology
Light-emitting diode (light emitting diode in recent years; LED) technology is ripe day by day, and LED has with commonly using bulb or fluorescent lamp and compare less electric power consumption, commonly uses bulb simultaneously or fluorescent lamp has longer useful life, and then has the electric power consumption of minimizing and excellent durability; LED can be installed in the narrow space and have strong freedom from vibration in addition, so the light-emitting device of LED has been widely used in display device and lighting field.
Traditional plant lamp (or being called electric illuminator) mostly is to use incandescent lamp or Electricity-saving lamp bulb, and it is arranged on phjytotron, growth chamber, phytotron or the open-air rural area lamp bracket, as the control light source at imitative sunshine; Shortcomings such as incandescent lamp has the heat energy of generation high (power consumption), luminous efficiency is low, the life-span is short, but price is cheap relatively; Electricity-saving lamp bulb all is superior to incandescent lamp at aspects such as producing heat energy, luminous efficiency, life-span, but its shortcoming is that price is higher, and Electricity-saving lamp bulb also has the pollution problem of mercury and radiation in addition; No matter but be incandescent lamp or Electricity-saving lamp bulb, when lighting a lamp work, all can produce high heat, meeting water also all has the problem of breaking; In addition; Incandescent lamp or Electricity-saving lamp bulb all are glasswares, and the incised wound staff that also breaks easily during loading and unloading is inquired into the light radiation angle; Incandescent lamp or Electricity-saving lamp bulb all are spheroid light radiation light sources; But with regard to veggetable electricity according to regard to, plant is positioned under the lamp down that radiant light is effective light, all the other all invalid light.That is to say that incandescent lamp or Electricity-saving lamp bulb are all wasted too many radiating light source.Just produce and assembly program, the fluorescent tube production of incandescent lamp or Electricity-saving lamp bulb all belongs to precision, and the investment of volume production production line is expensive.
Therefore if be arranged on the plant lamp with the LED collocation, must effectively improve the problem of aforementioned conventional plant lamp, therefore how LED combined with plant lamp, and then promote the operational effectiveness of improving the traditional plant lamp, be the technical task that tool thinking is worth in fact.
The utility model content
The purpose of the utility model is to provide a kind of direct encapsulation architecture of chip that can compatible different wave length LED, and the volume that reduces LED lamp finished product also promotes luminous efficient, promotes yield and increases the stability of product.
In order to reach above-mentioned purpose, the solution of the utility model is:
A kind of direct encapsulation architecture of chip that can compatible different wave length LED, this encapsulation architecture includes:
One base material;
One conductive layer, this conductive layer are arranged on this base material, and this conductive layer also is divided into a plurality of conductive regions;
The luminescence chip of a plurality of different wave lengths, this luminescence chip also comprise at least a encapsulation kenel, and this luminescence chip is fixed on this conductive layer, and electrically connect and be arranged as a luminous matrix with at least one this conductive region; And
At least one lens, these lens engage with this base material, and this luminescence chip is coated on wherein.
Above-mentioned base material is by selecting at least one to be formed in the group of a metal substrate, a ceramic substrate, a silicon substrate and a non-metal base plate.
Above-mentioned luminous matrix also include in a red light chips, an infrared ray chip, a blue chip, a ultraviolet chip, a green glow chip and the gold-tinted chip select at least one form.
Above-mentioned luminescence chip also has the colour temperature in the scope of 2600K to 10000K.
The encapsulation kenel of above-mentioned luminescence chip also comprises optional composition the in a horizontal kenel, a vertical kenel and the flip chip type attitude.
The material of said lens also includes optional one of which in a silica gel, a glass and the epoxy resin.
Above-mentioned luminous matrix also is divided at least one working region, and this working region is provided with a plurality of these luminescence chips, and this luminescence chip electrically connects to select the combination back in a polyphone mode or the parallelly connected mode arbitrarily.
This luminescence chip one forward voltage of each adjacency is smaller or equal to 5% in the above-mentioned working region.
Also electrically connect between above-mentioned working region to select the making up back in this series system or this parallel way arbitrarily.
After adopting said structure; The utility model can compatible different wave length LED the direct encapsulation architecture of chip; It mainly is the LED of different wave length and colour temperature to be integrated be packaged in the luminous matrix, reduce the volume of LED lamp finished product and promote luminous efficient, the direct encapsulation architecture of this chip mainly on a base material planning be provided with conductive layer; And by the separation of conductive layer configuration; The led chip that connects a plurality of different wave lengths and colour temperature and different encapsulation kenels electrically connects becoming luminous matrix the led chip of variant encapsulation kenel, and is provided with at least one lens (Lens) in luminous matrix and promotes luminous efficient; And promote yield and increase the stability of product, and then reach the effect of the direct encapsulation architecture of protection chip.
Through looking at present existing many located by prior art LED is applied on the plant growth lamp; But as to effectively promote the plant growth; It is good that plant lamp then needs the wavelength of wide area, therefore if reduction of outward appearance that can plant lamp is whole and lifting illumination usefulness will have greatest benifit to the growth of plant.
And except the plant growth; The LED illuminating product can also be widely used in it in rural activity according to its product performance; Because of the light source of LED product has controlled, controllability; Illumination wavelength can design adjusting, can satisfy the demand of different agriculture operation for different-waveband light as requested; LED illuminating product volume is little simultaneously; Can not take too much agricultural land and space; And do not influence plant growth, more possibly advance that rank are applied to that biology is raised future and direction such as aquaculture, for example United States Department of Agriculture in 2010 subsidizes the assessment of Purdue University and improve the research project that LED uses in the greenhouse; Japan also uses the blue-ray LED fishing lamp to come alternative metals halide fishing lamp etc. from research in 2005, this shows that it is a future trend that the LED illuminating product is applied to agricultural real.
Description of drawings
Fig. 1 for the utility model can compatible different wave length LED the luminous matrix Organization Chart of the direct encapsulation architecture of chip;
Fig. 2 A is the generalized section one of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 2 B is the generalized section two of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 2 C is the generalized section three of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 2 D is the generalized section four of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 2 E is the generalized section five of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 2 F is the generalized section six of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 2 G is the generalized section seven of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 3 A is the first embodiment sketch map one of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 3 B is the first embodiment sketch map two of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 3 C is the first embodiment front view of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 4 A is the second embodiment sketch map one of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 4 B is the second embodiment sketch map two of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 4 C is the second embodiment front view of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 5 A is the 3rd an embodiment sketch map one of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED;
Fig. 5 B is the 3rd an embodiment sketch map two of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED; And
Fig. 5 C is the 3rd an embodiment front view of the direct encapsulation architecture of chip that the utility model can compatible different wave length LED.
The main element symbol description
10 luminous matrix, 11 horizontal kenel luminescence chips
12 vertical kenel luminescence chip 13 flip chip type attitude luminescence chips
20 conductive layers, 30 base materials
42 plano lens of 41 separate lenses
43 optical lenses.
Embodiment
In order further to explain the technical scheme of the utility model, come the utility model is set forth in detail through specific embodiment below.
At first, please be earlier with reference to Fig. 1, chip that can compatible different wave length LED for the utility model directly encapsulates (Chip on Board; COB) the luminous matrix Organization Chart of framework.
The utility model can compatible different wave length LED the direct encapsulation architecture of chip; The direct encapsulation architecture of this chip is mainly planned on base material and is provided with conductive layer; Be to use conductive material to make like base material; Then in the middle of conductive layer and base material, an insulating barrier be need be provided with and conductive layer and base material separated; And dispose by the separation of conductive layer and to connect a plurality of different wave lengths and the different led chip that connects kenels forms luminous matrix 10; And the luminescence chip quantity of luminous matrix 10 does not have specific limited; Can serial arrangement electrically connect between each luminescence chip, wherein luminescence chip can be selected for use: red light chips (wavelength between 620～670nm), the infrared ray chip (wavelength between 700～750nm), blue chip (wavelength between 390～460nm), ultraviolet chip (the UVB wavelength is between 280～320nm, and the UVA wavelength between 360～390nm), the green glow chip (wavelength between 500～580nm), the gold-tinted chip (wavelength between 580～600nm) and colour temperature 2600K～10000K come the combination in any collocation.
Each is variant for the forward voltage (Vf) of the luminescence chip of taking into account different wave length and colour temperature; So luminous matrix 10 can also be divided at least one working region; Can be divided into a working region separately like black region in the icon (5x5); The luminescence chip of each working region inner abutment can select for use forward voltage (Vf) difference to be not more than the luminescence chip of 5% scope, luminous stability when increasing luminous matrix work; And the mode of available parallel connection between each working region (or series connection) electrically connects the overall control of do, or the independent external segmentation control of doing in each working region, is not limited to single fixing Display Modes.
Next do detailed description further with regard to the direct encapsulation architecture of the chip of the utility model, please continue A with reference to Fig. 2, for the utility model can compatible different wave length LED the generalized section one of the direct encapsulation architecture of chip.
The utility model is in the luminous matrix that luminescence chip is formed; Can select for use the horizontal kenel luminescence chip 11 (Horizontal PN chip) of various different wave lengths and colour temperature to make up; Horizontal kenel luminescence chip 11 is fixed on the base material; It is characterized in that upper epidermis is provided with first electrode and second electrode, can see through routing and engage (wire bonding) and come to electrically connect kenel so that each luminescence chip formation is connected with the electrode and the conductive layer 20 of the horizontal kenel luminescence chip 11 of adjacency.
Except aforesaid horizontal kenel luminescence chip 11 (Horizontal PN chip); Can select for use the vertical kenel luminescence chip 12 (Vertical PN chip) of various different wave lengths and colour temperature to make up equally; Vertical kenel luminescence chip 12 is fixed on the base material equally; It is characterized in that upper epidermis is provided with first electrode, following top layer then is provided with second electrode, and first electrode can see through routing joint (wire bonding) and electrically connect with the conductive layer 20 of the vertical kenel luminescence chip 12 of adjacency; And second electrode can be directly forms electric connections in solid the applying with conductive layer 20 when brilliant; Make the luminescence chip of each adjacency form the series connection kenel, previous embodiment is please with reference to Fig. 2 B, for the utility model can compatible different wave length LED the generalized section two of the direct encapsulation architecture of chip.
Please continue C with reference to Fig. 2; For the utility model can compatible different wave length LED the generalized section three of the direct encapsulation architecture of chip; Except the luminescence chip of aforementioned 2 kinds of different encapsulation kenels; Also can select for use the flip chip type attitude luminescence chip 13 (Flip chip) of various different wave lengths and colour temperature to make up, flip chip type attitude luminescence chip 13 is fixed on the base material equally, it is characterized in that the top layer is provided with first electrode and second electrode down; And first electrode and second electrode can be directly in solid fit to form with conductive layer 20 when brilliant electrically connect so that the luminescence chip of each adjacency forms the kenel of connecting.
Can know the luminescence chip of understanding various different encapsulation kenels by above-mentioned; All has different electrode positions; In order to satisfy the demand that each chip chamber electrically connects; The direct encapsulation architecture of the chip of the utility model more can have following execution mode, please with reference to Fig. 2 D, for the utility model can compatible different wave length LED the generalized section four of the direct encapsulation architecture of chip.
This enforcement kenel is the enforcement state that horizontal kenel luminescence chip 11 combines vertical kenel luminescence chip 12; Wherein conductive layer 20 can be divided into a plurality of conductive regions; Then horizontal kenel luminescence chip 11 is fixed on the base material with vertical kenel luminescence chip 12; And see through that routing engages (wire bonding) and solid formation with conductive layer 20 when brilliant electrically connects, make each luminescence chip form the kenel of connecting.
Except the described kenel of Fig. 2 D, please with reference to Fig. 2 E to Fig. 2 G, for the utility model can compatible different wave length LED the generalized section of the direct encapsulation architecture of chip.
These 3 accompanying drawings and Fig. 2 D part that plays the same tune on different musical instruments; Be exactly all can the luminescence chip of different wave length and colour temperature and different encapsulation kenels mixed to set up to be set to be luminous matrix; Wherein Fig. 2 E is the enforcement state that horizontal kenel luminescence chip 11 combines flip chip type attitude luminescence chip 13; Fig. 2 F then is the enforcement state that vertical kenel luminescence chip 12 combines flip chip type attitude luminescence chip 13; Fig. 2 G then is provided with kenel for horizontal kenel luminescence chip 11, vertical kenel luminescence chip 12 with mixing of flip chip type attitude luminescence chip 13; Its characteristics all are to see through the conductive region that conductive layer 20 is separated to form, and come luminescence chip suitable and each kenel to form and electrically connect, and then make each luminescence chip form the series connection kenel.
When each luminescence chip accomplish electrically connect after, then lens (Lens) can be set on luminescence chip, next please refer to Fig. 3 A, for the utility model can compatible different wave length LED the first embodiment sketch map one of the direct encapsulation architecture of chip.
By finding out among the figure after horizontal kenel luminescence chip 11, vertical kenel luminescence chip 12,20 completion electric connections of flip chip type attitude luminescence chip 13 and conductive layer; Then can separate lenses 41 be provided with and be packaged on the single luminescence chip; And separate lenses 41 and base material 30 are combined closely; With protection luminescence chip and corresponding conductive region, this separate lenses 41 more has the function that promotes luminous efficiency except the direct encapsulation architecture of tool protection chip; Encapsulation architecture except Fig. 3 A midplane formula; In order to increase the robustness of encapsulation architecture; More optional usefulness has the half buried base material 30 in ccontaining luminescence chip space, equally in horizontal kenel luminescence chip 11, vertical kenel luminescence chip 12, flip chip type attitude luminescence chip 13 and 20 of conductive layers accomplish electrically connect after, then can separate lenses 41 settings be packaged on the single luminescence chip; And separate lenses 41 and base material 30 are combined closely; With protection luminescence chip and corresponding conductive region, this half buried execution mode is please with reference to Fig. 3 B, for the utility model can compatible different wave length LED the first embodiment sketch map two of the direct encapsulation architecture of chip.
When encapsulation on the luminous matrix 10 be provided with accomplish separate lenses 41 after, its kenel can be with reference to Fig. 3 C, for the utility model can compatible different wave length LED the first embodiment front view of the direct encapsulation architecture of chip; Can find out among the figure that separate lenses 41 combines with base material 30, and luminescence chip (signal of square dotted line) is coated on wherein, and then the electric connection point between protection conductive layer and luminescence chip, promote yield and increase the stability of product; Wherein the material of the base material 30 of the utility model can be selected for use: in the group of metal substrate (for example: aluminium base, copper base and alloy substrate etc.), ceramic substrate, silicon substrate and non-metal base plate (as: diamond, graphite etc.), process according to the optional aforesaid material of design requirement.
Except aforesaid separate lenses packaged type, following execution mode can be arranged not violating under the same utility model spirit, please with reference to Fig. 4 A, for the utility model can compatible different wave length LED the second embodiment sketch map one of the direct encapsulation architecture of chip.
This embodiment is then for after horizontal kenel luminescence chip 11, vertical kenel luminescence chip 12,20 completion electric connections of flip chip type attitude luminescence chip 13 and conductive layer; Then can be packaged on all luminescence chips putting plano lens 42 settings; And a plano lens 42 and base material 30 are combined closely; With protection luminescence chip and conductive layer 20, this plano lens 42 more has the function that promotes luminous efficiency except the direct encapsulation architecture of tool protection chip; Volume with the time point plano lens is flat, has the effect in reduction space; Encapsulation architecture except Fig. 4 A midplane formula; In order to increase the robustness of encapsulation architecture; More optional usefulness has the half buried base material 30 in ccontaining luminescence chip space, equally in horizontal kenel luminescence chip 11, vertical kenel luminescence chip 12, flip chip type attitude luminescence chip 13 and 20 of conductive layers accomplish electrically connect after, then can be packaged on all luminescence chips putting plano lens 42 settings; And a plano lens 42 and base material 30 are combined closely; With protection luminescence chip and corresponding conductive region, this half buried execution mode is please with reference to Fig. 4 B, for the utility model can compatible different wave length LED the second embodiment sketch map two of the direct encapsulation architecture of chip.
When encapsulation on the luminous matrix 10 be provided with accomplish some plano lens 42 after, its kenel can be with reference to Fig. 4 C, for the utility model can compatible different wave length LED the second embodiment front view of the direct encapsulation architecture of chip; Can find out among the figure that a plano lens 42 combines with base material 30, and the luminescence chip in the luminous matrix 10 (signal of square dotted line) is coated on wherein, and then the electric connection point between protection conductive layer and luminescence chip, promote yield and increase the stability of product.
At last please with reference to Fig. 5 A, for the utility model can compatible different wave length LED the 3rd embodiment sketch map one of the direct encapsulation architecture of chip.
By finding out among the figure after horizontal kenel luminescence chip 11, vertical kenel luminescence chip 12,20 completion electric connections of flip chip type attitude luminescence chip 13 and conductive layer; Then can optical lens 43 be provided with and be packaged on all luminescence chips; And optical lens 43 and base material 30 are combined closely; With protection luminescence chip and conductive layer 20, this optical lens 43 more has the function that promotes luminous efficiency except the direct encapsulation architecture of tool protection chip; Encapsulation architecture except Fig. 5 A midplane formula; In order to increase the robustness of encapsulation architecture; More optional usefulness has the half buried base material 30 in ccontaining luminescence chip space, equally in horizontal kenel luminescence chip 11, vertical kenel luminescence chip 12, flip chip type attitude luminescence chip 13 and 20 of conductive layers accomplish electrically connect after, then can optical lens 43 settings be packaged on all luminescence chips; And optical lens 43 and base material 30 are combined closely; With protection luminescence chip and corresponding conductive region, this half buried execution mode is please with reference to Fig. 5 B, for the utility model can compatible different wave length LED the 3rd embodiment sketch map two of the direct encapsulation architecture of chip; And Fig. 5 C; For the utility model can compatible different wave length LED the 3rd embodiment front view of the direct encapsulation architecture of chip; Then the state after optical lens 43 is accomplished is set shown in this figure for encapsulation on the luminous matrix 10; Its function and structure and Fig. 4 C are approximate, and only difference only is the difference of lens kenel, so no longer repeat to give unnecessary details at this.
Aforesaid various lens; Can select for use silica gel (Silicone), glass (Glass) or epoxy resin materials such as (Epoxy) to make; And luminescence chip is except the chip that can select different wave length LED for use; More optional usefulness has the luminescence chip of wide colour temperature (within 2600K～10000K scope) and forms luminous matrix; Be separated into the design of a plurality of conductive regions simultaneously by conductive layer, can select the luminescence chip of various different encapsulation patterns to assemble, and then increase the convenience of commodity production.
The product form and the style of the foregoing description and accompanying drawing and non-limiting the utility model, the those of ordinary skill of any affiliated technical field all should be regarded as not breaking away from the patent category of the utility model to its suitable variation or modification of doing.

Claims (9)

  1. One kind can compatible different wave length LED the direct encapsulation architecture of chip, it is characterized in that this encapsulation architecture includes:
    One base material;
    One conductive layer, this conductive layer are arranged on this base material, and this conductive layer also is divided into a plurality of conductive regions;
    The luminescence chip of a plurality of different wave lengths, this luminescence chip also comprise at least a encapsulation kenel, and this luminescence chip is fixed on this conductive layer, and electrically connect and be arranged as a luminous matrix with at least one this conductive region; And
    At least one lens, these lens engage with this base material, and this luminescence chip is coated on wherein.
  2. 2. the direct encapsulation architecture of chip that according to claim 1 can compatible different wave length LED is characterized in that: this base material is by selecting at least one to be formed in the group of a metal substrate, a ceramic substrate, a silicon substrate and a non-metal base plate.
  3. 3. the direct encapsulation architecture of chip that according to claim 1 can compatible different wave length LED is characterized in that: this luminous matrix also include select in a red light chips, an infrared ray chip, a blue chip, a ultraviolet chip, a green glow chip and the gold-tinted chip at least one form.
  4. 4. the direct encapsulation architecture of chip that according to claim 1 can compatible different wave length LED, it is characterized in that: this luminescence chip also has the colour temperature in the scope of 2600K to 10000K.
  5. 5. the direct encapsulation architecture of chip that according to claim 1 can compatible different wave length LED is characterized in that: the encapsulation kenel of this luminescence chip also comprises optional composition the in a horizontal kenel, a vertical kenel and the flip chip type attitude.
  6. 6. the direct encapsulation architecture of chip that according to claim 1 can compatible different wave length LED is characterized in that: the material of these lens also includes optional one of which in a silica gel, a glass and the epoxy resin.
  7. 7. the direct encapsulation architecture of chip that according to claim 1 can compatible different wave length LED; It is characterized in that: this luminous matrix also is divided at least one working region; This working region is provided with a plurality of these luminescence chips, and this luminescence chip electrically connects to select the combination back in a polyphone mode or the parallelly connected mode arbitrarily.
  8. 8. like the said direct encapsulation architecture of chip that can compatible different wave length LED of claim 7, it is characterized in that: this luminescence chip one forward voltage of each adjacency is smaller or equal to 5% in this working region.
  9. 9. like the said direct encapsulation architecture of chip that can compatible different wave length LED of claim 7, it is characterized in that: between this working region also to select the combination back to electrically connect in this series system or this parallel way arbitrarily.
CN2012200307834U 2012-01-31 2012-01-31 Direct COB structure compatible for LED chips having different wavelength Expired - Fee Related CN202534646U (en)

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CN2012200307834U CN202534646U (en) 2012-01-31 2012-01-31 Direct COB structure compatible for LED chips having different wavelength

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