CN202524283U - Buffer circuit structure of modular multi-level converter sub-module - Google Patents
Buffer circuit structure of modular multi-level converter sub-module Download PDFInfo
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- CN202524283U CN202524283U CN2012201506002U CN201220150600U CN202524283U CN 202524283 U CN202524283 U CN 202524283U CN 2012201506002 U CN2012201506002 U CN 2012201506002U CN 201220150600 U CN201220150600 U CN 201220150600U CN 202524283 U CN202524283 U CN 202524283U
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- igbt2
- igbt1
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- 239000003990 capacitor Substances 0.000 claims abstract description 33
- 238000011084 recovery Methods 0.000 claims abstract description 8
- 230000003139 buffering effect Effects 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 15
- 238000007599 discharging Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
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Abstract
The utility model relates to a buffer circuit structure of a modular multi-level converter sub-module. The sub-module consists of an IGBT (Insulated Gate Bipolar Translator)1, an IGBT2 and a DC (direct current) capacitor C, wherein the two ends of the IGBT1 and IGBT2 are reversely connected in parallel with a diode respectively; the IGBT1, the IGBT2 and the DC capacitor C are sequentially matched and connected in series; a buffer resistor Rs and a fast recovery diode Ds are connected in parallel and then form an RCD buffer circuit with a buffer capacitor Cs; and the two ends of the RCD buffer circuit are connected in parallel at the two ends of the collector of the IGBT1 and the emitter of the IGBT2 of the sub-module. By connecting a buffer resistor in the buffer circuit, an effective discharge loop can be provided when in discharge of the buffer capacitor; in the sub-module, only the two ends of the collector of the IGBT1 and the emitter of the IGBT2 are connected in parallel with an RCD buffer circuit, thus the structure of the sub-module is simplified, and the cost of the converter is effectively lowered; and the fast recovery diode connected in the buffer circuit can prevent resonance caused by the buffer capacitor and the parasitic inductor when the device is turned off, thus the working efficiency of the converter is improved.
Description
Technical field
the utility model relates to a kind of buffer circuit that is applied to protection insulated gate bipolar transistor in the field of power electronics, especially a kind of buffer circuit structure of modular multilevel current transformer submodule.
Background technology
modular multilevel current transformer is a kind of novel voltage source converter; Be mainly used in the high-power occasion; Its submodule state switches frequent; Cause the switching frequency of IGBT very high, increased and turn on and off loss, reduced the operating efficiency of modular multilevel current transformer.
The topology of
modular multilevel current transformer submodule is different from traditional converter structure, has caused the particularity of its buffer circuit structure.At present; The buffer circuit of modular multilevel current transformer submodule generally is to choose according to experience in the past; Common modular multilevel buffer circuit structure has two kinds: first kind of buffer circuit structure is at each IGBT two ends parallel connection C buffer circuit, RC buffer circuit or RCD buffer circuit, increased modular multilevel current transformer equipment cost, increased the stray inductance of submodule simultaneously; Overvoltage when IGBT is turn-offed is bigger; Influence the due effect of buffer circuit, also possibly cause the IGBT components from being damaged under the serious situation, reduced the reliability of modular multilevel current transformer; Second kind of buffer circuit structure is at the input and output side parallel connection C of submodule buffer circuit, RC buffer circuit or RCD buffer circuit; When IGBT2 discharged, discharging current was very big at buffer capacitor for the structure of this kind buffer circuit, might exceed the range of safety operation of IGBT; There is potential safety hazard; And this kind buffer circuit suppresses to flow through the limited in one's ability of IGBT1 electric current when IGBT1 turn-offs, suppress the overvoltage DeGrain.
The utility model content
In order to solve the buffer circuit poor reliability of existing many level current transformers submodule; The problem that suppresses the overvoltage DeGrain; The utility model provides a kind of buffer circuit structure of modular multilevel current transformer submodule; Have only a RCD buffer circuit in the submodule, effectively reduced the cost of current transformer, reduced the complexity of structure; Buffer capacitor C
s
When switching device turn-offs, charge, reduce the current changing rate that flows through stray inductance in the submodule when IGBT turn-offs, can effectively suppress the overvoltage when IGBT turn-offs in the submodule; Buffer resistance R
s
When buffer capacitor discharges, can reduce the discharging current of buffer capacitor, guaranteed to be operated in the range of safety operation when IGBT opens; Fast recovery diode D
s
Can live the voltage oscillation that causes because of the stray inductance in buffer capacitor and the circuit by clamp, suppress the generation of resonance, effectively ensure the operate as normal of modular multilevel current transformer.
The utility model solves the technical scheme that its technical problem adopted: submodule is made up of IGBT1, IGBT2 and dc capacitor C; The two ends of IGBT1 and IGBT2 each difference diode D1 of inverse parallel and D2; IGBT1, IGBT2 and dc capacitor C mate successively and are connected in series buffer resistance R
s
, fast recovery diode D
s
Parallel connection back and buffering capacitor C
s
Series connection constitutes the RCD buffer circuit, and the two ends of RCD buffer circuit are connected in parallel on the collector electrode of submodule IGBT1 and the emitter two ends of IGBT2.
Said fast recovery diode D
s
Choose the switching frequency that will cooperate IGBT1 and IGBT2, buffer resistance R
s
Resistance choose and want rationally, resistance may cause too greatly before IGBT1 or IGBT2 turn-off next time, can not be with buffer capacitor C
s
The overvoltage energy that stores discharges, if the too little meeting of resistance causes buffer capacitor C
s
The velocity of discharge is too fast, and discharging current is excessive.Buffer capacitor C
s
Choose noninductive electric capacity, can reduce the stray inductance of circuit like this, choose buffer capacitor C
s
The time, if the value of selecting is excessive, when IGBT1 and IGBT2 switching frequency were higher, the overvoltage energy of storage possibly not discharge; Too small as if choosing, buffer circuit suppresses to turn-off superpotential DeGrain.In addition, buffer circuit should can reduce the stray inductance Lp of buffer circuit as far as possible near the terminal of IGBT1 and IGBT2 when connecting like this, suppresses superpotential effect in order to avoid influence buffer circuit.
The beneficial effect of
the utility model is; Insert buffer resistance in this buffer circuit, effective discharge loop is provided in the time of can discharging for buffer capacitor, submodule is only at the collector electrode of IGBT1 and RCD buffer circuit of emitter two ends parallel connection of IGBT2; Simplified the structure of submodule; Guaranteeing that overvoltage suppresses to have reduced the cost of current transformer effectively under the prerequisite of effect, the fast recovery diode that inserts in the buffer circuit can prevent when device turn-offs to cause resonance because of buffer capacitor and stray inductance; Avoid increasing the turn-off power loss of IGBT, improved the operating efficiency of current transformer.
Description of drawings
are described further the utility model below in conjunction with accompanying drawing and embodiment.
Fig. 1 is that the circuit of the utility model connects sketch map.
Fig. 2 is that the circuit that has stray inductance in the utility model circuit connects sketch map.
Embodiment
In the drawings, submodule is made up of IGBT1, IGBT2 and dc capacitor C, and the two ends of IGBT1 and IGBT2 each respectively diode D1 of inverse parallel and D2, IGBT1, IGBT2 and dc capacitor C mate successively and be connected in series buffer resistance R
s
, fast recovery diode D
s
Parallel connection back and buffering capacitor C
s
Series connection constitutes the RCD buffer circuit, and the two ends of RCD buffer circuit are connected in parallel on the collector electrode of submodule IGBT1 and the emitter two ends of IGBT2.
have two kinds of operating states when the submodule switching tube normally moves, four kinds of working methods.To the different working mode, analyzed the operation principle of overvoltage generation reason and buffer circuit.
Working method 1: circuit discharging, submodule input
When submodule was operated in this working method, electric current flowed out from the A end through IGBT1 from the B end
.When not adding buffer circuit, after sending the shutoff pulse to IGBT1, the electric current of the IGBT1 that flows through sharply reduces, bus stray inductance L P On can induce L P d
I/d
tVoltage, the stack of induced voltage and submodule capacitance voltage causes the IGBT1 two ends to bear too high voltages, withstand voltage formation threatens to IGBT1.After adding buffer circuit, when IGBT1 turn-offs, buffer capacitor C
s Voltage raises, buffer capacitor C s Charging, charging current is identical with the sense of current that flows through stray inductance, has reduced the current changing rate that flows through stray inductance, and then has suppressed the shutoff overvoltage of IGBT1.When IGBT1 turn-offed, the brachium pontis electric current reduced, and the brachium pontis reactor can induce Ld
I/d
tVoltage, make D2 bear forward voltage, when D2 voltage during greater than threshold voltage, D2 begins conducting, after the complete conducting of D2, IGBT1 turn-offs fully, after this submodule is operated in working method 2.
Working method 2: circuit discharging, submodule excision
When submodule was operated in this working method, electric current flowed out from the A end through D2 from the B end
.When not adding buffer circuit, after sending the shutoff pulse to IGBT2, the shutoff of diode D2 does not receive IGBT2 to turn-off the control of pulse; Have only the IGBT1 of working as to begin open-minded; When D2 bore reverse voltage in two ends, D2 just began to turn-off, and after this D2 electric current is reduced to negative maximum gradually; And then quickly recover to 0, can respond to L in this process median generatrix stray inductance P d
I/d
tVoltage, cause the IGBT2 two ends to bear too high voltages, the withstand voltage formation of IGBT2 is threatened.After adding buffer circuit, when D2 turn-offs, buffer capacitor C
s Voltage raises, buffer capacitor C s Charging, charging current is identical with the sense of current that flows through stray inductance, has reduced the current changing rate that flows through stray inductance, and then has suppressed the shutoff overvoltage of IGBT2.After the complete conducting of IGBT1, D2 turn-offs fully, and after this submodule is operated in working method 1.
Working method 3: circuit charging, submodule input
When submodule was operated in this working method, the submodule electric current flowed out from the B end through D1 from the A end
.When not adding buffer circuit, after sending the shutoff pulse to IGBT1, the shutoff of diode D1 does not receive IGBT1 to turn-off the control of pulse; Have only the IGBT2 of working as to begin open-minded; When D1 bore reverse voltage in two ends, D1 just began to turn-off, and the D1 electric current is reduced to negative maximum gradually; And then quickly recover to 0, can respond to L in this process median generatrix stray inductance P d
I/d
tVoltage, cause the IGBT1 two ends to bear too high voltages, the withstand voltage formation of IGBT1 is threatened.After adding buffer circuit, when D1 turn-offs, buffer capacitor C
s Voltage raises, buffer capacitor C s Charging, charging current is identical with the sense of current that flows through stray inductance, has reduced the current changing rate that flows through stray inductance, and then has suppressed the shutoff overvoltage of IGBT1.After the complete conducting of IGBT2, D1 turn-offs fully, and after this submodule is operated in working method 4.
Working method 4: circuit charging, submodule excision
When submodule was operated in this working method, the submodule electric current flowed out from the B end through IGBT2 from the A end
.When not adding buffer circuit, after sending the shutoff pulse to IGBT2, the electric current of the IGBT2 that flows through sharply reduces, can induction-L on the brachium pontis reactor
Di/dtVoltage, cause diode D1 to bear forward voltage, when D1 voltage during greater than threshold voltage, D1 begins conducting, the electric current that flows through D1 increases gradually, bus stray inductance L
P On can induce L P d
I/d
tVoltage, the stack of induced voltage and submodule capacitance voltage causes the IGBT2 two ends to bear too high voltages, withstand voltage formation threatens to IGBT2.After adding buffer circuit, when IGBT2 turn-offs, buffer capacitor C
s Voltage raises, buffer capacitor C s Charging, charging current is identical with the sense of current that flows through stray inductance, has reduced the current changing rate that flows through stray inductance, and then has suppressed the shutoff overvoltage of IGBT2.After the complete conducting of D1, IGBT2 turn-offs fully, and after this submodule is operated in working method 3.
Claims (1)
1. the buffer circuit structure of a modular multilevel current transformer submodule; Submodule is made up of IGBT1, IGBT2 and dc capacitor C; The two ends of IGBT1 and IGBT2 each respectively diode D1 of inverse parallel and D2, IGBT1, IGBT2 and dc capacitor C mate successively and are connected in series; It is characterized in that: buffer resistance R
s, fast recovery diode D
sParallel connection back and buffering capacitor C
sSeries connection constitutes the RCD buffer circuit, and the two ends of RCD buffer circuit are connected in parallel on the collector electrode of submodule IGBT1 and the emitter two ends of IGBT2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201506002U CN202524283U (en) | 2012-04-11 | 2012-04-11 | Buffer circuit structure of modular multi-level converter sub-module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201506002U CN202524283U (en) | 2012-04-11 | 2012-04-11 | Buffer circuit structure of modular multi-level converter sub-module |
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| Publication Number | Publication Date |
|---|---|
| CN202524283U true CN202524283U (en) | 2012-11-07 |
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ID=47107211
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012201506002U Expired - Fee Related CN202524283U (en) | 2012-04-11 | 2012-04-11 | Buffer circuit structure of modular multi-level converter sub-module |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103427616A (en) * | 2013-08-28 | 2013-12-04 | 苏州汇川技术有限公司 | Large-size frequency converter and electrifying buffer circuit on control power supply of large-size frequency converter |
| CN106452036A (en) * | 2016-10-25 | 2017-02-22 | 广州供电局有限公司 | A modularized multi-level inverter based on an H-bridge and a buffer circuit thereof |
| CN106558865A (en) * | 2015-09-25 | 2017-04-05 | 全球能源互联网研究院 | A kind of modified cascade full-bridge high voltage DC breaker and its quick coincidence method |
| CN106787882A (en) * | 2017-01-18 | 2017-05-31 | 国家电网公司 | A kind of MMC submodules for improving transient overvoltage tolerance |
| CN108233340A (en) * | 2018-01-26 | 2018-06-29 | 上海交通大学 | Damp type blocks circuit |
| CN108540024A (en) * | 2018-05-03 | 2018-09-14 | 魏海峰 | A kind of device and method inhibiting the impact of brshless DC motor commutation terminal voltage |
| CN109039046A (en) * | 2018-07-20 | 2018-12-18 | 华中科技大学 | A kind of buffer circuit of half full-bridge submodule of modularization multi-level converter |
| CN111799997A (en) * | 2020-07-22 | 2020-10-20 | 湖南五维地质科技有限公司 | Optimal design method of classic RCD absorption loop and transient electromagnetic transmitter |
| CN114631253A (en) * | 2019-10-15 | 2022-06-14 | 日立能源瑞士股份公司 | Switching circuit with buffer component |
-
2012
- 2012-04-11 CN CN2012201506002U patent/CN202524283U/en not_active Expired - Fee Related
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103427616A (en) * | 2013-08-28 | 2013-12-04 | 苏州汇川技术有限公司 | Large-size frequency converter and electrifying buffer circuit on control power supply of large-size frequency converter |
| CN106558865B (en) * | 2015-09-25 | 2019-03-15 | 全球能源互联网研究院 | A kind of modified cascade full-bridge high voltage DC breaker and its quick coincidence method |
| CN106558865A (en) * | 2015-09-25 | 2017-04-05 | 全球能源互联网研究院 | A kind of modified cascade full-bridge high voltage DC breaker and its quick coincidence method |
| CN106452036A (en) * | 2016-10-25 | 2017-02-22 | 广州供电局有限公司 | A modularized multi-level inverter based on an H-bridge and a buffer circuit thereof |
| CN106452036B (en) * | 2016-10-25 | 2019-08-16 | 广州供电局有限公司 | Modularization multi-level converter and its buffer circuit based on H bridge |
| CN106787882A (en) * | 2017-01-18 | 2017-05-31 | 国家电网公司 | A kind of MMC submodules for improving transient overvoltage tolerance |
| CN106787882B (en) * | 2017-01-18 | 2023-06-23 | 国家电网公司 | MMC submodule capable of improving transient overvoltage tolerance |
| CN108233340A (en) * | 2018-01-26 | 2018-06-29 | 上海交通大学 | Damp type blocks circuit |
| CN108233340B (en) * | 2018-01-26 | 2019-10-08 | 上海交通大学 | Damp type blocks circuit |
| CN108540024A (en) * | 2018-05-03 | 2018-09-14 | 魏海峰 | A kind of device and method inhibiting the impact of brshless DC motor commutation terminal voltage |
| CN109039046A (en) * | 2018-07-20 | 2018-12-18 | 华中科技大学 | A kind of buffer circuit of half full-bridge submodule of modularization multi-level converter |
| CN109039046B (en) * | 2018-07-20 | 2020-02-14 | 华中科技大学 | Buffer circuit of modular multilevel converter half-full-bridge submodule |
| CN114631253A (en) * | 2019-10-15 | 2022-06-14 | 日立能源瑞士股份公司 | Switching circuit with buffer component |
| US11646653B2 (en) | 2019-10-15 | 2023-05-09 | Hitachi Energy Switzerland Ag | Switching circuit with snubber components |
| CN114631253B (en) * | 2019-10-15 | 2023-05-16 | 日立能源瑞士股份公司 | Switching circuit with buffer member |
| CN111799997A (en) * | 2020-07-22 | 2020-10-20 | 湖南五维地质科技有限公司 | Optimal design method of classic RCD absorption loop and transient electromagnetic transmitter |
| CN111799997B (en) * | 2020-07-22 | 2021-08-17 | 湖南五维地质科技有限公司 | Optimal design method of classic RCD absorption loop and transient electromagnetic transmitter |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121107 Termination date: 20130411 |