CN202491018U - Laser processing device for thin-film solar cell - Google Patents
Laser processing device for thin-film solar cell Download PDFInfo
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- CN202491018U CN202491018U CN 201220091338 CN201220091338U CN202491018U CN 202491018 U CN202491018 U CN 202491018U CN 201220091338 CN201220091338 CN 201220091338 CN 201220091338 U CN201220091338 U CN 201220091338U CN 202491018 U CN202491018 U CN 202491018U
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Abstract
The utility model relates to a laser processing device for a thin-film solar cell, belonging to the technical field of thin-film solar cell laser processing, and solving the technical problem of how to etch cell edge insulating trenches once and for all. The laser processing device comprises an X-direction motion mechanism, a Y-direction motion mechanism and an optical device; and the optical device is supported and fixed on the Y-direction motion mechanism through a support frame. The laser processing device is characterized by mainly comprising a laser device, a beam expanding mechanism, an adjustable diaphragm, a reflecting mirror and a focusing device; and the laser device is a green laser with Gauss-distributed fundamental mode, high peak power, narrow pulse width and stable low frequency, and can be used for etching a front electrode layer trench and a back electrode layer trench both with steps. The laser processing device provided by the utility model has the advantages of good insulation property, low equipment requirement, high efficiency and capabilities of effectively reducing manufacture cost and improving product quality.
Description
Technical field
The utility model relates to a kind of laser processing device that is used for solar cell, belongs to the thin-film solar cells technical field of laser processing.
Background technology
Thin-film solar cells is through the power generating device that forms of deposit multilayer film (mainly comprising preceding electrode layer, photoelectric conversion layer and dorsum electrode layer) successively on substrate; Because the deposition back is electrode layer and dorsum electrode layer overlap joint problem of short-circuit before the edge of battery exists; Therefore need carry out insulation processing at battery edge, edge insulation is handled and is adopted chemical corrosion method and laser grooving and scribing channel process usually.At present, mainly adopt the laser grooving and scribing channel process, to improve efficient and reliability and the security that battery edge is handled.The laser grooving and scribing channel process is through laser rete to be delineated removal near the battery edge place, forms insulated trench, requires insulated trench to have certain width simultaneously, and can not discharge in the insulated trench both sides under the high pressure about 500V.The laser grooving and scribing technology of employing different-waveband is accomplished the groove delineation process of different retes respectively, like electrode layer groove before the Ultra-Violet Laser delineation of adopting 1064nm infrared laser or 355nm; Delineate photoelectricity conversion coating and dorsum electrode layer groove simultaneously with the green laser of 532nm, make internal cell and edge separate, realize edge insulation through front and back twice delineation groove.Usually the delineation of edge groove mainly contains two kinds of forms; The one, staggering in preceding electrode layer groove and dorsum electrode layer groove position, discloses a kind of silicon film solar batteries and manufacturing approach thereof like Chinese patent ZL200710125207.1, earlier with electrode layer groove before the Ultra-Violet Laser delineation of 1064nm infrared laser or 355nm; Delineate photoelectric conversion layer and dorsum electrode layer groove simultaneously with the green laser of 532nm again; This method is not owing to need two groove contrapositions, and therefore lower to the laser equipment required precision, processing technology is simple; But because the groove mutual dislocation of twice delineation; The problem of overlap joint short circuit of electrode layer and photoelectric conversion layer or electric leakage before edge still exists, if particularly solar cell application is in the abominable area of environment, the electric leakage problem can be more serious.Another kind of laser grooving and scribing method is that preceding electrode layer groove and dorsum electrode layer groove center line are positioned at same position, and two groove widths are different, are step-like; Disclose a kind ofly earlier with the groove of green laser grooving and scribing photoelectric conversion layer of 532nm and dorsum electrode layer like U.S. Pat 20060266409A1, again with 1064nm infrared laser electrode layer groove before the first time, delineated the cutting position, the groove that this method processes has cut off contacting of internal cell and edge fully; Insulation effect is good; But groove is twice processing respectively, and efficient is low, requires twice delineation position height consistent; If twice position is inconsistent; Can influence insulation effect, high to equipment precision requirement, increase equipment cost.
The utility model content
To the deficiency of above prior art, a kind of laser processing device that is used for thin-film solar cells of the utility model design solves the technical problem that how to realize disposable delineation battery edge insulated trench.
In order to realize above task; The technical scheme that the utility model adopts: a kind of laser processing device that is used for thin-film solar cells is provided; Comprise X to motion, Y to motion and Optical devices; These Optical devices are supported and fixed on Y on motion by bracing frame; Its technical characterictic is that Optical devices mainly are made up of laser instrument, expansion bundle mechanism, adjustable diaphragm, speculum and focusing arrangement, and laser instrument is the stable green laser of high-peak power, narrow pulsewidth and low frequency that basic mode becomes Gaussian distribution.The characteristics that the green laser facula in the Gaussian distribution weakens to the cylindrical energy from the center are gradually satisfied in utilization; Because preceding electrode layer material has different damage thresholds with the corresponding laser grooving and scribing energy of dorsum electrode layer material; Corresponding preceding electrode layer needs higher laser energy to remove rete; Photoelectric conversion layer and dorsum electrode layer need more low-yield removal rete; When using green laser grooving and scribing insulated trench, preceding electrode layer, photoelectric conversion layer and dorsum electrode layer are all removed by near the high-octane laser grooving and scribing the laser facula central area, and photoelectric conversion layer and dorsum electrode layer are by the more low-energy laser grooving and scribing removal of laser near the cylindrical position; Form stair-stepping insulated trench at same position, realized disposable delineation step insulated trench.
The photoelectric conversion layer width is consistent with the dorsum electrode layer width.Preceding electrode layer width is less than the dorsum electrode layer width.
The peak power of laser instrument is preferably 50kW ~ 200kW greater than 50kW, and pulsewidth is 1ns ~ 15ns, and wavelength is 532nm.
The frequency of laser instrument is 0kHz ~ 100kHz, preferred 5kHz ~ 15kHz.
The transparent aperture of adjustable diaphragm is preferably 3mm ~ 6mm greater than 3mm.
Focusing arrangement is the long Jiao of focal length greater than 300mm, and preferred focal length is 300mm ~ 600mm.
The hot spot that focusing arrangement produces can be the toroidal hot spot, also can be square focus spot.
Expanding bundle mechanism is the multiplying power more than 5 times.
Adjustable diaphragm is installed in the rear portion of expansion bundle mechanism or the front portion of focusing arrangement.
X comprises supporting plate and the linear electric motors that move along respective direction to motion and Y to telecontrol equipment, and supporting plate is installed on the linear electric motors.
Speculum in the laser processing device has two at least, and wherein at least one speculum and focusing arrangement are installed in Y on the motion supporting plate.
Y to motion comprise Optical devices bracing frame, Y to motion supporting plate and Y to linear electric motors, Y is installed in Y on linear electric motors to the motion supporting plate.
The good effect of the utility model: 1. owing to adopt basic mode to become the high-power green Laser Processing substrate of Gaussian distribution; At the disposable formation step of battery edge insulated trench,, do not need contraposition owing to be same laser facula; Reduce equipment cost; Enhance productivity and guarantee best insulation effect, and can make the technology simple and flexible through regulating the insulated trench that laser power obtain different step width differences.
2. adopt the green laser of narrow pulsewidth, shorten the membrane removal time, enhance productivity, make the rete edge can not produce slag, burr, avoided problems such as short circuit or electric leakage, guarantee insulation quality.
3. adopt the stable green laser of low frequency, under identical delineation speed, avoided single hot spot to become big and hot spot registration that cause is higher and cause defectives such as burr, slag, micro-crack, guaranteed insulation effect.
4. adopt the focusing arrangement of long-focus, widened focal zone, made operation window broaden, reduced the job requirement precision, be convenient to operation.
5. adopt wide-aperture adjustable diaphragm, realized the required insulated trench width of disposable delineation, do not needed repeatedly to process, guaranteed insulation quality.
Description of drawings
Fig. 1: the laser equipment structural representation of the utility model.
Fig. 2: laser work principle schematic among Fig. 1.
Fig. 3: the basic mode that laser instrument produces in the utility model is the energy curve and the laser spot position corresponding diagram of Gaussian distribution, and wherein a is the damage threshold of preceding electrode layer material, and b is the damage threshold of dorsum electrode layer material, and c is the home position of laser facula.
Fig. 4: the schematic appearance of the insulated trench of the utility model processing; Among the figure: 7 ' among Fig. 2 by the insulated trench of the preceding electrode layer 7-2 that is processed more than or equal to energy a, 7 ' ' among Fig. 2 by the insulated trench of photoelectric conversion layer 7-3 that is processed more than or equal to energy b and dorsum electrode layer 7-4.
Fig. 5: the generalized section of the insulated trench of the utility model processing, W1 is insulated trench a 7 ' width among the figure, W2 is an insulated trench 7 ' ' width.
Fig. 6: the generalized section of the insulated trench of documents 1.
Fig. 7: the insulated trench of documents 2 produces the generalized section of step shift phenomenon.
Among the figure: 1, laser instrument, 2, the Optical devices bracing frame, 3, expand bundle mechanism, 4, adjustable diaphragm, 5, speculum; 6, focusing arrangement, 7, substrate, 7-1, glass, 7-2, preceding electrode layer; 7-3, photoelectric conversion layer, 7-4, dorsum electrode layer, 8, Y is to the motion supporting plate, 9, Y is to the line of motion motor; 10, X is to the motion supporting plate, and 11, X is to the line of motion motor, 12, X is to the motion bracing frame, 13, support column.
The specific embodiment
The laser processing device that is used for thin-film solar cells; Its laser instrument sends green laser beam; Form collimated laser beam through expanding bundle mechanism; Again after adjustable diaphragm blocks through impinging perpendicularly on focusing arrangement after the higher order reflection mirroring, the laser beam after the focusing is processed substrate, the green laser of laser instrument once depicts the step insulated trench to preceding electrode layer and photoelectric conversion layer, the dorsum electrode layer of substrate simultaneously.
The laser equipment of the utility model design adopts special high-peak power, narrow pulsewidth, the stable long focus optical devices of low frequency, and the wavelength of generation is the green laser that the basic mode of 532nm is Gaussian distribution; Can disposablely depict preceding electrode layer groove and dorsum electrode layer groove with step; There is not the problem that needs contraposition, good insulating, and also equipment requirements is low, efficient is high; Can reduce manufacturing cost effectively, improve the quality of products.
It is 50kW ~ 200kW that the utility model adopts peak power, and pulsewidth is 1ns ~ 15ns, and frequency is 5kHz ~ 15kHz; The focal length of focusing arrangement is 300mm ~ 600mm; The transparent aperture of adjustable diaphragm is 3mm ~ 6mm, and high power has had the energy of electrode layer before the delineation, and the different-energy that Gaussian distribution produces corresponding different laser positions distributes; Technology is simple, and production efficiency is high; And traditional 532nm laser instrument peak power is 0.3kW ~ 0.8kW; Pulsewidth 20ns ~ 50ns, operating frequency is between 40kHz ~ 70kHz, and the focal length of focusing arrangement is below the 150mm; The transparent aperture of adjustable diaphragm need adopt repeatedly technology to depict insulated trench at battery edge for being 1 ~ 2mm.The utility model has been broken through the restriction of prior art, can effectively realize the insulated trench at disposable delineation battery edge place.
Embodiment one: the insulated trench processing of single-unit amorphous silicon thin-film solar cell.
The present embodiment laser process equipment mainly is made up of to motion and Optical devices to motion, Y X; X to motion comprise X to motion bracing frame 12, X to motion supporting plate 10, X to line of motion motor 11 and support column 13; X is installed in X on motion bracing frame 12 to line of motion motor 11; X is installed in X on the guide rail of line of motion motor 11 to motion supporting plate 10, and support column 13 is installed in X on motion supporting plate 10; Y to motion comprise Optical devices bracing frame 2, Y to motion supporting plate 8 and Y to linear electric motors 9; Y is installed on the Optical devices bracing frame 2 to linear electric motors 9; Y is installed in Y on linear electric motors 9 to motion supporting plate 8, and Optical devices comprise laser instrument 1, expand bundle mechanism 3, adjustable diaphragm 4, speculum 5 and focusing arrangement 6, and Optical devices are installed in Y on motion; Laser instrument 1, speculum 5, expansion bundle mechanism 3 and adjustable diaphragm 4 are installed on the Optical devices bracing frame 2; Speculum 5 is installed in Y on motion supporting plate 8 with focusing arrangement 6, and substrate 7 is placed on the support column 13, and face down.
When beginning to delineate the insulated trench on substrate 7 long limits, whole Optical devices are motionless, and substrate 7 is cooked the 1m/s high-speed motion at X under line of motion motor 11 drives; When delineating the insulated trench of minor face, substrate 7 is motionless, and focusing arrangement 6 is done the 1m/s high-speed motion at Y under the drive of linear electric motors 9, finally on substrate 7, has obtained the insulated trenches of step, accomplishes processing.
This insulated trenches 7 ' ' width W 2 is 0.18mm, outer hot spot registration 55.6%, 7 ' width W 1 of this insulated trenches is 0.11mm, interior is 27.3% along the hot spot registration.Use megger test insulated trenches two side resistances, pressurize 500 volts, resistance is greater than 200 megohms.
Embodiment two: the processing of the insulated trench of binodal amorphous silicon thin-film solar cell.
Laser process equipment is identical with embodiment one; Substrate 7 to be processed is the binodal amorphous silicon thin-film solar cell; And substrate 7 is that the thick AZO of 700nm, photoelectric conversion layer 7-3 are that 1300nm thick non-crystalline silicon binodal structure, dorsum electrode layer 7-4 are when being the thick metallic aluminium nickel alloy of 120nm for thick glass 7-1, the preceding electrode layer 7-2 of 3.2mm; The energy of laser instrument 1 is transferred to 6W, and frequency transfers to 12KHz, and the focus of laser beam transfers on the rete of substrate 7 to be processed.
When beginning to delineate the insulated trench on substrate 7 long limits, whole Optical devices are motionless, and substrate 7 is cooked the 1m/s high-speed motion at X under the drive of line of motion motor 11; When delineating the insulated trench of minor face, substrate 7 is motionless, and focusing arrangement 6 is done the 1m/s high-speed motion at Y under the drive of linear electric motors 9, finally on substrate 7, has obtained the insulated trenches of step, accomplishes processing.
This insulated trenches 7 ' ' width is 0.2mm, outer hot spot registration 58.3%, 7 ' width of this insulated trenches is 0.1mm, interior is 16.7% along the hot spot registration.Use megger test insulated trenches two side resistances, pressurize 500 volts, resistance is greater than 200 megohms.
Embodiment three: the processing of the insulated trench of amorphous/crystallite overlapping thin film solar battery.
Laser process equipment is identical with embodiment one; Substrate 7 to be processed is amorphous/crystallite overlapping thin film solar battery; And substrate 7 is that the thick BZO of 1500nm, photoelectric conversion layer 7-3 are that the thick amorphous of 1700nm/crystallite binodal structure, dorsum electrode layer 7-4 are when being the thick BZO of 1200nm for thick glass 7-1, the preceding electrode layer 7-2 of 4mm; The energy of laser instrument 1 is transferred to 9W, and frequency transfers to 8KHz, and the focus of laser beam transfers on the rete of substrate 7 to be processed.
When beginning to delineate the insulated trench on substrate 7 long limits, whole Optical devices are motionless, and substrate 7 is cooked the 0.6m/s high-speed motion at X under the drive of line of motion motor 11; When delineating the insulated trench of minor face, substrate 7 is motionless, and focusing arrangement 6 is done the 0.6m/s high-speed motion at Y under the drive of linear electric motors 9, finally on substrate 7, has obtained the insulated trenches of step, accomplishes processing.
This insulated trenches 7 ' ' width is 0.22mm, outer hot spot registration 65.9%, 7 ' width of this insulated trenches is 0.09mm, interior is 16.7% along the hot spot registration.Use megger test insulated trenches two side resistances, pressurize 500 volts, resistance is greater than 200 megohms.
Claims (10)
1. laser processing device that is used for thin-film solar cells; Comprise X to motion, Y to motion and Optical devices; These Optical devices are supported and fixed on Y on motion by bracing frame; It is characterized in that said Optical devices mainly are made up of laser instrument, expansion bundle mechanism, adjustable diaphragm, speculum and focusing arrangement, laser instrument is the stable green laser of high-peak power, narrow pulsewidth and low frequency that basic mode becomes Gaussian distribution.
2. the laser processing device that is used for thin-film solar cells according to claim 1, the peak power that it is characterized in that said laser instrument are greater than 50kW, and pulsewidth is 1ns ~ 15ns.
3. the laser processing device that is used for thin-film solar cells according to claim 1, the wavelength that it is characterized in that said laser instrument is 532nm.
4. the laser processing device that is used for thin-film solar cells according to claim 1, the frequency that it is characterized in that said laser instrument is 0kHz ~ 100kHz.
5. the laser processing device that is used for thin-film solar cells according to claim 1 is characterized in that said expansion bundle mechanism is the multiplying power more than 5 times.
6. the laser processing device that is used for thin-film solar cells according to claim 1 is characterized in that said focusing arrangement is the long Jiao of focal length greater than 300mm.
7. the laser processing device that is used for thin-film solar cells according to claim 1, the transparent aperture that it is characterized in that said adjustable diaphragm is greater than 3mm.
8. the laser processing device that is used for thin-film solar cells according to claim 1 is characterized in that said adjustable diaphragm is installed in the rear portion of parallel beam expand device or the front portion of focusing arrangement.
9. the laser processing device that is used for thin-film solar cells according to claim 1 is characterized in that said X comprises supporting plate and the linear electric motors that move along respective direction to motion and Y to telecontrol equipment, and supporting plate is installed on the linear electric motors.
10. the laser processing device that is used for thin-film solar cells according to claim 9 is characterized in that said speculum has two at least, and wherein at least one speculum and focusing arrangement are installed in Y on the motion supporting plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220091338 CN202491018U (en) | 2012-03-13 | 2012-03-13 | Laser processing device for thin-film solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220091338 CN202491018U (en) | 2012-03-13 | 2012-03-13 | Laser processing device for thin-film solar cell |
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| CN202491018U true CN202491018U (en) | 2012-10-17 |
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| CN 201220091338 Expired - Lifetime CN202491018U (en) | 2012-03-13 | 2012-03-13 | Laser processing device for thin-film solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104400227A (en) * | 2014-09-26 | 2015-03-11 | 四川汉能光伏有限公司 | Processing method for laser scribing of FTO glass |
| CN107976632A (en) * | 2017-11-02 | 2018-05-01 | 武汉光谷航天三江激光产业技术研究院有限公司 | A kind of photoelectric conversion efficiency test device and method |
-
2012
- 2012-03-13 CN CN 201220091338 patent/CN202491018U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104400227A (en) * | 2014-09-26 | 2015-03-11 | 四川汉能光伏有限公司 | Processing method for laser scribing of FTO glass |
| CN107976632A (en) * | 2017-11-02 | 2018-05-01 | 武汉光谷航天三江激光产业技术研究院有限公司 | A kind of photoelectric conversion efficiency test device and method |
| CN107976632B (en) * | 2017-11-02 | 2020-06-12 | 武汉光谷航天三江激光产业技术研究院有限公司 | Photoelectric conversion efficiency testing device and method |
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Granted publication date: 20121017 |