CN202424488U - Shared-cathode-type anti-reversing-function topology circuit applied to photo-electricity storage battery - Google Patents
Shared-cathode-type anti-reversing-function topology circuit applied to photo-electricity storage battery Download PDFInfo
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- CN202424488U CN202424488U CN 201120462262 CN201120462262U CN202424488U CN 202424488 U CN202424488 U CN 202424488U CN 201120462262 CN201120462262 CN 201120462262 CN 201120462262 U CN201120462262 U CN 201120462262U CN 202424488 U CN202424488 U CN 202424488U
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Abstract
The utility model relates to a shared-cathode-type anti-reversing-function topology circuit applied to a photo-electricity storage battery. The shared-cathode-type anti-reversing-function topology circuit comprises a photoelectric battery anti-reverse-connection driving circuit, a photoelectric battery anti-reverse-connection unit, a storage battery anti-reverse-connection driving unit, a storage battery anti-reverse-connection unit and a BUCK topology circuit unit, wherein the photoelectric battery anti-reverse-connection unit adopts a metal-oxide-semiconductor field effect transistor, the source electrode of the photoelectric battery anti-reverse-connection unit is connected with the anode of a photovoltaic assembly, the grid electrode of the photoelectric battery anti-reverse-connection unit is connected with the photoelectric battery anti-reverse-connection driving unit, and the drain electrode of the photoelectric battery anti-reverse-connection unit is connected with the cathode of the photovoltaic assembly by the BUCK topology circuit; the storage battery anti-reverse-connection unit adopts a metal-oxide-semiconductor field effect transistor, the source electrode of the storage battery anti-reverse-connection unit is connected with the anode of a storage battery, the grid electrode of the storage battery anti-reverse-connection unit is connected with the storage battery anti-reverse-connection driving unit, and the drain electrode of the storage battery anti-reverse-connection unit is connected with the cathode of the storage battery by the BUCK topology circuit. According to the shared-cathode-type anti-reversing-function topology circuit, the anti-reverse-connection protection function on the photoelectric battery and the storage battery can be realized, the damage to components in reverse connection can be avoided, and meanwhile, the shared-cathode property of the whole circuit can not be changed.
Description
Technical field
The utility model relates to a kind of anti-reverse power transistor drive circuit, particularly relates to a kind of photocell storage battery anti-counter-function topological circuit of negative-type altogether that is applied to.
Background technology
In the existing anti-reverse power transistor drive circuit, the general method that connects is at counnter attack diode of photocell end series connection, and in insurance of storage battery end series connection.During the photocell reversal connection, the flow direction of the backward diode reverse current capable of blocking of series connection; During reverse connection of accumulator, the insurance of series connection is blown, thereby cuts off reverse big electric current.Though this kind design cost is lower, and the technical difficulty that implements is less, and its negative effect is also apparent in view:
1, when the counnter attack diode forward conducting of photocell end series connection, can produce bigger power consumption and the big more power consumption of electric current is big more, therefore above-mentioned existing design has reduced capacity usage ratio;
2, change the step of insuring bothers very much; Requirement finds the insurance of same model to replace, and need take controller apart and weld again, (like water proof type controller inside casting glue is arranged for the place of inclement condition is very inconvenient; If depot repair not, insurance burn out no better than controller and scrap);
3, for the insurance of insufficient sensitivity; Above-mentioned existing circuit design has suitable danger, if untimelyly during reversal connection blow insurance, then might cause heat accumulation; Thereby burn out other components and parts, possibly cause serious consequence even injury personal safety when serious.
This shows that above-mentioned existing anti-reverse power transistor drive circuit obviously still has inconvenience and defective, and demands urgently further improving on circuit is formed and used.How to found a kind of anti-reverse function that has, and the circuit application that can avoid the new structure that any components and parts damage is that current this area utmost point needs improved targets in the common negative-type counnter attack function control device of light storage battery.
The utility model content
The technical problem that the utility model will solve provides a kind of photocell storage battery anti-counter-function topological circuit of negative-type altogether that is applied to; Make it both can realize the reverse connecting protection function of photocell and storage battery; In the time of can effectively avoiding reversal connection again to the damage of components and parts; Simultaneously do not change the common negative pole characteristic of integrated circuit, thereby overcome the deficiency of existing anti-reverse power transistor drive circuit.
For solving the problems of the technologies described above; A kind of photocell storage battery anti-counter-function topological circuit of negative-type altogether that is applied to of the utility model; Comprise the anti-reverse driver element of photocell, the anti-reverse unit of photocell, the anti-reverse driver element of storage battery, the anti-reverse unit of storage battery and BUCK topological circuit unit; Wherein: the anti-reverse unit of photocell adopts metal-oxide half field effect transistor; Its source electrode is connected with the positive pole of photovoltaic module, and grid is connected with the anti-reverse driver element of photocell, and drain electrode is connected in the negative pole of photovoltaic module through BUCK topological circuit unit; The anti-reverse unit of storage battery adopts metal-oxide half field effect transistor, and its source electrode is connected with the positive pole of storage battery, and grid is connected with the anti-reverse driver element of storage battery, and drain electrode is connected in the negative pole of storage battery through BUCK topological circuit unit.
As further improvement, the anti-reverse driver element of described photocell comprises that capacitor C 21 and C22, diode D21 and D22 and PNP triode Q22:C21 one termination 12V shake square wave over the ground, and the other end is connected with D21, D22 respectively; The end of C22 is connected with photronic positive pole, and the other end is connected with D22, Q22; The positive pole of D21 is connected with photronic positive pole, and negative pole is connected with C21; The positive pole of D22 is connected with C21, and negative pole is connected with C22; The emitter of Q22 is connected with C22, and collector electrode is connected with the grid of the anti-reverse unit of photocell metal-oxide half field effect transistor.
The anti-reverse driver element of described storage battery comprises that capacitor C 11, C12 and diode D11, D12:C11 one termination 12V shake square wave over the ground, and the other end is connected with D11, D12 respectively; The end of C12 is connected with the positive pole of storage battery, and the other end is connected with the grid and the D12 of the anti-reverse unit of storage battery metal-oxide half field effect transistor; The positive pole of D11 is connected with the positive pole of storage battery, and negative pole is connected with C11; The positive pole of D12 is connected with C11, and negative pole is connected with C12.
After adopting such structure, the utility model has the following advantages at least:
1, the controller of the utility model (MPPT maximum power point tracking controller) on main circuit BUCK circuit topological structure basis, has added photocell and storage battery reverse-connection preventing circuit and drive circuit thereof, has strengthened the defencive function of controller;
2, the utility model can realize that photocell just connects, reverse connection of accumulator, and photocell reversal connection, accumulator positive connect, the reverse connecting protection function of photocell reversal connection, reverse connection of accumulator combination in any;
3, the MOSFET internal resistance during conducting is extremely low, and the very little effective efficient that improves system of the energy of consumption is not damaged any device in the protection process, be more suitable for extensively promoting the use of;
4, the drive circuit of counnter attack unit provides the driving voltage that is higher than positive electrode bus voltage, has realized the function of anodal counnter attack.
Description of drawings
Above-mentioned only is the general introduction of the utility model technical scheme, in order more to know the technological means of understanding the utility model, below in conjunction with accompanying drawing and embodiment the utility model is done further to specify.
Fig. 1 is that the utility model is applied to the photocell storage battery composition frame chart of the anti-counter-function topological circuit of negative-type altogether.
Fig. 2 is that the utility model is applied to a photocell storage battery concrete application example sketch map of the anti-counter-function topological circuit of negative-type altogether.
Fig. 3 is the circuit diagram of the anti-reverse driver element of storage battery of the utility model.
Fig. 4 is the circuit diagram of the anti-reverse driver element of photocell of the utility model.
Embodiment
See also shown in Figure 1; The utility model is applied to the photocell storage battery anti-counter-function topological circuit of negative-type altogether, mainly is made up of the anti-reverse driver element of photocell, the anti-reverse unit of photocell, the anti-reverse driver element of storage battery, the anti-reverse unit of storage battery and BUCK topological circuit unit.
Wherein, the anti-reverse unit of photocell adopts metal-oxide half field effect transistor, and its source electrode is connected with the positive pole of photovoltaic module, and grid is connected with the anti-reverse driver element of photocell, and drain electrode is connected in the negative pole of photovoltaic module through BUCK topological circuit unit.
The anti-reverse unit of storage battery adopts metal-oxide half field effect transistor, and its source electrode is connected with the positive pole of storage battery, and grid is connected with the anti-reverse driver element of storage battery, and drain electrode is connected in the negative pole of storage battery through BUCK topological circuit unit.
Preferable; Please cooperate and consult shown in Figure 2ly, MOSFET Q2 is the anti-reverse unit of photocell, and MOSFET Q12 is the anti-reverse unit of storage battery; The anti-reverse drive circuit of photovoltaic module is the anti-reverse driver element of photocell; The anti-reverse drive circuit of storage battery is the anti-reverse driver element of storage battery, and except that photovoltaic module and storage battery, remaining circuit partly is BUCK topological circuit unit.
During work; When photocell and the normal wiring of storage battery; Anti-reverse unit of photocell and the anti-reverse unit of storage battery operate as normal; The driver element of two MOSFET all has drive signal to produce, and the anti-reverse unit of photocell MOSFET Q2 and the anti-reverse unit of storage battery MOSFET Q12 all are in conducting state, and have electric current to flow through.
When photocell anodal with negative pole mutual connection inverse time mutually, the anti-reverse drive unit drives blackout of photocell, the anti-reverse unit of photocell MOSFET Q2 has not had driving voltage can be in cut-off state, has blocked the flow direction of negative-phase sequence curent.
When battery positive voltage and negative pole mutual connection inverse time mutually, the anti-reverse drive unit drives blackout of storage battery, the anti-reverse unit of storage battery MOSFET Q12 has not had driving voltage can be in cut-off state, has blocked the flow direction of negative-phase sequence curent.
See also shown in Figure 3ly, the anti-reverse driver element of storage battery can comprise that capacitor C 11, C12 and diode D11, D12:C11 one termination 12V shake square wave over the ground, and the other end is connected with D11, D12 respectively; The end of C12 is connected with the positive pole of storage battery, and the other end is connected with the grid and the D12 of the anti-reverse unit of storage battery metal-oxide half field effect transistor; The positive pole of D11 is connected with the positive pole of storage battery, and negative pole is connected with C11; The positive pole of D12 is connected with C11, and negative pole is connected with C12.
It is the square-wave signal over the ground of 12V that C11 one termination has a high level; Storage battery is that C11 has filled the voltage that equates with battery tension with through D11 when the ground connection of C11 left side, and to have obtained a voltage that is higher than battery tension 12V through D12 be that C12 charges simultaneously on the right side of D12 during for 12V when the C11 left side.12V square wave over the ground shakes constantly repeatedly C12 is charged, thereby the grid of storage battery counnter attack pipe has just obtained a voltage that continues to be higher than battery positive voltage 12V and continues conducting like this.Thereby if storage battery connect anti-this circuit do not have 12V over the ground the square wave input can not produce the voltage that is higher than battery positive voltage 12V and close to the grid storage battery counnter attack pipe of storage battery counnter attack pipe and reach the purpose that counnter attack is protected.
See also shown in Figure 4ly, the anti-reverse driver element of photocell mainly is made up of with C22, diode D21 and D22 and PNP triode Q22 capacitor C 21: C21 one termination 12V shakes square wave over the ground, and the other end is connected with D21, D22 respectively; The end of C22 is connected with photronic positive pole, and the other end is connected with D22, Q22; The positive pole of D21 is connected with photronic positive pole, and negative pole is connected with C21; The positive pole of D22 is connected with C21, and negative pole is connected with C22; The emitter of Q22 is connected with C22, and collector electrode is connected with the grid of the anti-reverse unit of photocell metal-oxide half field effect transistor.
Said with above storage battery counnter attack driving, the circuit that C21, C22, D21, D22 form has produced the power supply that is higher than the anodal 12V of photocell, and the power supply of the needed necessity of conducting is provided for photocell counnter attack MOSFET like this.Correctly sample photocell voltage when photocell connects correct control system, controller sends photocell charging conducting control signal, and 12V voltage is added to photocell counnter attack power tube grid through Q22, the conducting of photocell counnter attack power tube.If connecing revertive control system, photocell can not correctly sample photocell voltage; Can not send photocell charging conducting control signal; Q22 ends, thereby photocell counnter attack power tube grid can not obtain driving voltage photocell counnter attack power tube by the purpose that has reached photocell counnter attack protection.
The above; It only is the preferred embodiment of the utility model; Be not that the utility model is done any pro forma restriction, those skilled in the art utilize the technology contents of above-mentioned announcement to make a little simple modification, equivalent variations or modification, all drop in the protection range of the utility model.
Claims (3)
1. one kind is applied to the photocell storage battery anti-counter-function topological circuit of negative-type altogether; It is characterized in that comprising the anti-reverse driver element of photocell, the anti-reverse unit of photocell, the anti-reverse driver element of storage battery, the anti-reverse unit of storage battery and BUCK topological circuit unit, wherein:
The anti-reverse unit of photocell adopts metal-oxide half field effect transistor, and its source electrode is connected with the positive pole of photovoltaic module, and grid is connected with the anti-reverse driver element of photocell, and drain electrode is connected in the negative pole of photovoltaic module through BUCK topological circuit unit;
The anti-reverse unit of storage battery adopts metal-oxide half field effect transistor, and its source electrode is connected with the positive pole of storage battery, and grid is connected with the anti-reverse driver element of storage battery, and drain electrode is connected in the negative pole of storage battery through BUCK topological circuit unit.
2. the photocell storage battery anti-counter-function topological circuit of negative-type altogether that is applied to according to claim 1 is characterized in that the anti-reverse driver element of described photocell comprises capacitor C 21 and capacitor C 22, diode D21 and diode D22 and PNP triode Q22:
Capacitor C 21 1 termination 12V shake square wave over the ground, and the other end is connected with diode D21, diode D22 respectively;
One end of capacitor C 22 is connected with photronic positive pole, and the other end is connected with diode D22, PNP triode Q22;
The positive pole of diode D21 is connected with photronic positive pole, and negative pole is connected with capacitor C 21;
The positive pole of diode D22 is connected with capacitor C 21, and negative pole is connected with capacitor C 22;
The emitter of PNP triode Q22 is connected with capacitor C 22, and collector electrode is connected with the grid of the anti-reverse unit of photocell metal-oxide half field effect transistor.
3. the photocell storage battery anti-counter-function topological circuit of negative-type altogether that is applied to according to claim 1 is characterized in that the anti-reverse driver element of described storage battery comprises capacitor C 11, capacitor C 12 and diode D11, diode D12:
Capacitor C 11 1 termination 12V shake square wave over the ground, and the other end is connected with diode D11, diode D12 respectively;
One end of capacitor C 12 is connected with the positive pole of storage battery, and the other end is connected with the grid and the diode D12 of the anti-reverse unit of storage battery metal-oxide half field effect transistor;
The positive pole of diode D11 is connected with the positive pole of storage battery, and negative pole is connected with capacitor C 11;
The positive pole of diode D12 is connected with capacitor C 11, and negative pole is connected with capacitor C 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120462262 CN202424488U (en) | 2011-11-18 | 2011-11-18 | Shared-cathode-type anti-reversing-function topology circuit applied to photo-electricity storage battery |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201120462262 CN202424488U (en) | 2011-11-18 | 2011-11-18 | Shared-cathode-type anti-reversing-function topology circuit applied to photo-electricity storage battery |
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| CN 201120462262 Expired - Lifetime CN202424488U (en) | 2011-11-18 | 2011-11-18 | Shared-cathode-type anti-reversing-function topology circuit applied to photo-electricity storage battery |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9696782B2 (en) | 2015-02-09 | 2017-07-04 | Microsoft Technology Licensing, Llc | Battery parameter-based power management for suppressing power spikes |
| US9748765B2 (en) | 2015-02-26 | 2017-08-29 | Microsoft Technology Licensing, Llc | Load allocation for multi-battery devices |
| US9793570B2 (en) | 2015-12-04 | 2017-10-17 | Microsoft Technology Licensing, Llc | Shared electrode battery |
| US9939862B2 (en) | 2015-11-13 | 2018-04-10 | Microsoft Technology Licensing, Llc | Latency-based energy storage device selection |
| US10061366B2 (en) | 2015-11-17 | 2018-08-28 | Microsoft Technology Licensing, Llc | Schedule-based energy storage device selection |
| US10158148B2 (en) | 2015-02-18 | 2018-12-18 | Microsoft Technology Licensing, Llc | Dynamically changing internal state of a battery |
-
2011
- 2011-11-18 CN CN 201120462262 patent/CN202424488U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9696782B2 (en) | 2015-02-09 | 2017-07-04 | Microsoft Technology Licensing, Llc | Battery parameter-based power management for suppressing power spikes |
| US10228747B2 (en) | 2015-02-09 | 2019-03-12 | Microsoft Technology Licensing, Llc | Battery parameter-based power management for suppressing power spikes |
| US10158148B2 (en) | 2015-02-18 | 2018-12-18 | Microsoft Technology Licensing, Llc | Dynamically changing internal state of a battery |
| US9748765B2 (en) | 2015-02-26 | 2017-08-29 | Microsoft Technology Licensing, Llc | Load allocation for multi-battery devices |
| US10263421B2 (en) | 2015-02-26 | 2019-04-16 | Microsoft Technology Licensing, Llc | Load allocation for multi-battery devices |
| US9939862B2 (en) | 2015-11-13 | 2018-04-10 | Microsoft Technology Licensing, Llc | Latency-based energy storage device selection |
| US10061366B2 (en) | 2015-11-17 | 2018-08-28 | Microsoft Technology Licensing, Llc | Schedule-based energy storage device selection |
| US9793570B2 (en) | 2015-12-04 | 2017-10-17 | Microsoft Technology Licensing, Llc | Shared electrode battery |
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Address after: 100085 Haidian District, Beijing information industry base on the 3rd Street, building two, floor A, No. 228, paragraph Patentee after: BEIJING EPSOLAR TECHNOLOGY CO., LTD. Address before: 100085 Haidian District, Beijing information industry base on the 3rd Street, building two, floor A, No. 228, paragraph Patentee before: Beijing Epsolar Technology Co., Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20120905 |
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| CX01 | Expiry of patent term |