CN202421118U - Gas sensor chip - Google Patents
Gas sensor chip Download PDFInfo
- Publication number
- CN202421118U CN202421118U CN2011205387652U CN201120538765U CN202421118U CN 202421118 U CN202421118 U CN 202421118U CN 2011205387652 U CN2011205387652 U CN 2011205387652U CN 201120538765 U CN201120538765 U CN 201120538765U CN 202421118 U CN202421118 U CN 202421118U
- Authority
- CN
- China
- Prior art keywords
- gas sensor
- sensor chip
- electrode
- sensitive
- heating electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The utility model provides a gas sensor chip comprising a glass substrate, wherein a heating electrode and a sensitive electrode are formed on the glass substrate by virtue of a microelectronic process, and a sensitive material is sintered on the heating electrode and the sensitive electrode; the gas sensor chip can be manufactured in batches by virtue of the microelectronic process, and the entire element is simple in structure, small in volume and low in cost.
Description
Technical field
The utility model relates to the sensor of chemical gas technical field, is specifically related to a kind of gas sensor chip.
Background technology
The sensor of chemical gas chip part is many, volume is big.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the purpose of the utility model is to provide a kind of gas sensor chip, and is simple in structure, and volume is little, cost is low.
In order to achieve the above object, the technical scheme taked of the utility model is:
A kind of gas sensor chip comprises substrate of glass 1, on substrate of glass 1, adopts microelectronic technique to be processed with heating electrode 2 and sensitive electrode 3, and sintering has sensitive material 4 on heating electrode 2 and sensitive electrode 3.
Owing to adopted microelectronic technique, realize producing in batches, whole element simple in structure, volume is little, and cost is low.
Description of drawings
Accompanying drawing is the structural representation of the utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model is done detailed description.
With reference to accompanying drawing, a kind of gas sensor chip comprises substrate of glass 1, on substrate of glass 1, adopts microelectronic technique to be processed with heating electrode 2 and sensitive electrode 3, and sintering has sensitive material 4 on heating electrode 2 and sensitive electrode 3.
The utility model has adopted microelectronic technique, can realize producing in batches, and whole element simple in structure, volume is little, and cost is low.
Claims (1)
1. a gas sensor chip comprises substrate of glass (1), it is characterized in that: be processed with heating electrode (2) and sensitive electrode (3) at the last microelectronic technique that adopts of substrate of glass (1), at heating electrode (2) and the last sintering of sensitive electrode (3) sensitive material (4) arranged.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011205387652U CN202421118U (en) | 2011-12-15 | 2011-12-15 | Gas sensor chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011205387652U CN202421118U (en) | 2011-12-15 | 2011-12-15 | Gas sensor chip |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202421118U true CN202421118U (en) | 2012-09-05 |
Family
ID=46745871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011205387652U Expired - Fee Related CN202421118U (en) | 2011-12-15 | 2011-12-15 | Gas sensor chip |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202421118U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103630575A (en) * | 2013-12-05 | 2014-03-12 | 大连理工大学 | Multielectrode combined integrated gas sensor |
CN105606661A (en) * | 2016-03-09 | 2016-05-25 | 中国科学院微电子研究所 | Film type MOS gas sensor integrated with nano structure and manufacturing method thereof |
-
2011
- 2011-12-15 CN CN2011205387652U patent/CN202421118U/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103630575A (en) * | 2013-12-05 | 2014-03-12 | 大连理工大学 | Multielectrode combined integrated gas sensor |
CN105606661A (en) * | 2016-03-09 | 2016-05-25 | 中国科学院微电子研究所 | Film type MOS gas sensor integrated with nano structure and manufacturing method thereof |
CN105606661B (en) * | 2016-03-09 | 2019-02-12 | 中国科学院微电子研究所 | Film type MOS gas sensor integrated with nano structure and manufacturing method thereof |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120905 Termination date: 20121215 |