CN202390568U - Sapphire crucible for growing garnet type single crystal - Google Patents
Sapphire crucible for growing garnet type single crystal Download PDFInfo
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- CN202390568U CN202390568U CN2011205336152U CN201120533615U CN202390568U CN 202390568 U CN202390568 U CN 202390568U CN 2011205336152 U CN2011205336152 U CN 2011205336152U CN 201120533615 U CN201120533615 U CN 201120533615U CN 202390568 U CN202390568 U CN 202390568U
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- crucible
- sapphire
- single crystal
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Abstract
The utility model relates to a sapphire crucible for growing garnet type single crystal. The sapphire crucible is used for preparing Ga2O3 component-containing garnet type single crystal such as gadolinium gallium garnet and terbium gallium garnet. The sapphire crucible for growing the garnet type single crystal comprises an outer crucible sleeved outside an inner crucible, wherein the top end face of the inner crucible is in parallel with that of the outer crucible, the cross-section shape of the inner crucible is fit with that of the outer crucible, and the inner crucible is made from sapphire. The sapphire crucible adopts the technical scheme, so that the condition that the inner quality of the crystal is inflected since the iraurita which is grown by the generation between the iraurita oxide and the Ga2O3 component floats on the surface of a melt when an iraurita crucible is used can be eliminated, and meanwhile the promoting effect of the oxide of the iraurita to the decomposition and volatilization of the Ga2O3 component can be eliminated.
Description
Technical field
The utility model relates to a kind of gadolinium gallium garnet (Gd that is used to prepare
3Ga
5O
12, abbreviate GGG as) and terbium gallium garnet (Tb
3Ga
5O
12, abbreviate TGG as) etc. contain Ga
2O
3The sapphire crucible of the carbuncle type monocrystalline of component.
Background technology
High power solid state laser has the requirement of a series of strictnesses to laser crystals: fluorescence lifetime, high thermomechanical property and the crystal that can grow into the large size high optical quality of big absorption cross and emission cross section, length.The GGG crystal is grown under smooth solid-liquid interface easily; There are not other impurity and center of stress; Whole cross section all can effectively utilize, and obtains being applied to the large size lath and the fuel plate of superpower laser easily, and the GGG crystal has good mechanics and chemicalstability, high thermal conductivity, wide pump absorption band, the fluorescence lifetime of growing; The absorption of pump light and energy storage property are all better, can realize the running of continous way or pulse type laser.The GGG crystal has become one of preferred material of high power solid state laser.
Along with the fast development of near-infrared region optical fiber technology, optoisolator obtains more and more important use in information transmission at present.Optoisolator mainly utilizes the Faraday effect of magneto-optical crystal.Terbium gallium garnet (TGG) has higher Verdet constant and low uptake factor in visible and near infrared spectrum district; And use Czochralski grown easily; Therefore, the TGG crystal is to be applied to the faraday's optoisolator of 400～1100nm wave band and the ideal material of higher-wattage laser magnetic-optic devices.
From on can find out that GGG and TGG crystal are with a wide range of applications, but in these two kinds of crystal growing process, all be faced with serious Ga
2O
3The component volatilization problem is because component Ga
2O
3Has stronger oxidisability; And this material has different decomposition pressures under different temperature; Generate inferior gallium oxide and oxygen so reduction volatilization takes place easily for it in the heating and melting process; Make the bath component nonstoichiometry can not get timely correction, the crystalline quality is caused seriously influence, be difficult to grow the GGG and the TGG crystal of large-size high-quality.Zhao Guang army of Shanghai ray machine institute of the Chinese Academy of Sciences etc. feeds certain partial pressure, component Ga in GGG crystalline growth atmosphere
2O
3Volatilization effectively suppressed, but owing to use Iridium Crucible, the oxygen of feeding has quickened the oxidation of iraurite.In addition, because reaction Ir+O
2=IrO
2, IrO
2+ Ga
2O
3=Ir+Ga
2O+2O
2Generation; Bath surface is a floating iraurite sheet often; Observation when this not only gives seed crystal has down brought inconvenience, and has changed the temperature on the bath surface, is prone to produce surperficial spiral fringe; Influence the crystalline quality, and the buoyant iraurite is prone to be wrapped in the crystal and forms and loose point or be grown in the crystalline shoulder and form a large amount of dislocations.Simultaneously, because Ga has been quickened in the existence of Iridium Crucible
2O
3The volatilization of component has strengthened departing from of bath component.
The utility model content
The utility model provides a kind of and contains Ga at preparation gadolinium gallium garnet or terbium gallium garnet etc.
2O
3Can not influence the crystals quality during carbuncle type monocrystalline of component, reduce component deviation be used to grow the sapphire crucible of carbuncle type monocrystalline.
The technical scheme that provides according to the utility model; The sapphire crucible of the said carbuncle type monocrystalline that is used to grow; Crucible and outer crucible in comprising, interior crucible is arranged on the outside of outer crucible, and interior crucible is concordant with the top end face of outer crucible; The section form of interior crucible and outer crucible is coincide, and said interior crucible is processed by sapphire.
Said outer crucible is processed by tungsten or molybdenum.
The internal diameter of crucible is 60～70mm in said, and the wall thickness of interior crucible is 3～6mm, and the height of interior crucible is 40～45mm.
The internal diameter of said outer crucible is 66～82mm, and the wall thickness of outer crucible is 5～8mm, and the height of outer crucible is 40～50mm.
The section form of crucible is annular or polygon annular in said.
The beneficial effect that the utlity model has: adopt the sapphire crucible device of technique scheme, can eliminate when using Iridium Crucible iraurite oxide compound and Ga
2O
3Component reaction growth iraurite swims in bath surface and influences the crystalline internal soundness, and simultaneously, the oxide compound of eliminating iraurite is to Ga
2O
3Decomposition of components evaporable promoter action.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Embodiment
Below in conjunction with concrete accompanying drawing and embodiment the utility model is described further.
As shown in the figure, the sapphire crucible of the carbuncle type monocrystalline that is used to grow, crucible 1 and outer crucible 2 in comprising; Interior crucible 1 is arranged on the outside of outer crucible 2; Interior crucible 1 is concordant with the top end face of outer crucible 2, and interior crucible 1 coincide with the section form of outer crucible 2, said in crucible 1 process by sapphire.
Said outer crucible 2 is processed by tungsten or molybdenum.
The internal diameter of crucible 1 is 60～70mm in said, and the wall thickness of interior crucible 1 is 3～6mm, and the height of interior crucible 1 is 40～45mm.
The internal diameter of said outer crucible 2 is 66～82mm, and the wall thickness of outer crucible 2 is 5～8mm, and the height of outer crucible 2 is 40～50mm.
The section form of crucible 1 is annular or polygon annular in said.
The utility model adopts the sapphire crucible to replace traditional Czochralski grown to contain Ga
2O
3Employed Iridium Crucible during carbuncle type monocrystalline such as the GGG of component and TGG can be eliminated the oxide compound and the component Ga of iraurite fully
2O
3Reaction growth iraurite swims in bath surface and forms wrap, diffusing point and dislocation at crystals.Simultaneously, the oxide compound of eliminating iraurite is to Ga
2O
3Decomposition of components evaporable promoter action.
Claims (5)
1. the sapphire crucible of the carbuncle type monocrystalline that is used to grow; Comprise interior crucible (1) and outer crucible (2); Interior crucible (1) is arranged on the outside of outer crucible (2); Interior crucible (1) is concordant with the top end face of outer crucible (2), and interior crucible (1) coincide with the section form of outer crucible (2), and it is characterized in that: crucible (1) is processed by sapphire in said.
2. the sapphire crucible of the carbuncle type monocrystalline that is used to grow as claimed in claim 1, it is characterized in that: said outer crucible (2) is processed by tungsten or molybdenum.
3. the sapphire crucible of the carbuncle type monocrystalline that is used to grow as claimed in claim 1 is characterized in that: the internal diameter of crucible (1) is 60～70mm in said, and the wall thickness of interior crucible (1) is 3～6mm, and the height of interior crucible (1) is 40～45mm.
4. the sapphire crucible of the carbuncle type monocrystalline that is used to grow as claimed in claim 1, it is characterized in that: the internal diameter of said outer crucible (2) is 66～82mm, and the wall thickness of outer crucible (2) is 5～8mm, and the height of outer crucible (2) is 40～50mm.
5. the sapphire crucible of the carbuncle type monocrystalline that is used to grow as claimed in claim 1 is characterized in that: the section form of crucible (1) is annular or polygon annular in said.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205336152U CN202390568U (en) | 2011-12-19 | 2011-12-19 | Sapphire crucible for growing garnet type single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205336152U CN202390568U (en) | 2011-12-19 | 2011-12-19 | Sapphire crucible for growing garnet type single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202390568U true CN202390568U (en) | 2012-08-22 |
Family
ID=46665505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011205336152U Expired - Lifetime CN202390568U (en) | 2011-12-19 | 2011-12-19 | Sapphire crucible for growing garnet type single crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202390568U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113774484A (en) * | 2021-09-13 | 2021-12-10 | 浙江大学杭州国际科创中心 | Gallium oxide crystal growth method and combined crucible for growing gallium oxide crystal |
-
2011
- 2011-12-19 CN CN2011205336152U patent/CN202390568U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113774484A (en) * | 2021-09-13 | 2021-12-10 | 浙江大学杭州国际科创中心 | Gallium oxide crystal growth method and combined crucible for growing gallium oxide crystal |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120822 |