CN202384332U - High power light emitting diode apparatus having metal substrate - Google Patents
High power light emitting diode apparatus having metal substrate Download PDFInfo
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- CN202384332U CN202384332U CN2011204624557U CN201120462455U CN202384332U CN 202384332 U CN202384332 U CN 202384332U CN 2011204624557 U CN2011204624557 U CN 2011204624557U CN 201120462455 U CN201120462455 U CN 201120462455U CN 202384332 U CN202384332 U CN 202384332U
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- metal substrate
- high power
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- led device
- storage tank
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Abstract
Provided is a high power light emitting diode apparatus having a metal substrate, comprising a metal substrate, a circuit laminated body, at least one light emitting diode crystal grain, at least one phosphor, a glue-blocking portion, and a silica gel portion, wherein the metal substrate is coated upon a crystal-disposing area via a preplating material layer and then is connected with the preplating material layer via a support-separating pad body; the support-separating pad body comprises at least one storage tank and is connected with the preplating material layer; the storage tank comprises a top surface side and a bottom side with a certain distance therebetween, with the periphery of the storage tank being provided with a reflector body; the circuit laminated body is connected with the metal substrate and provided with a through hole and a baffle area; the through hole is corresponding to the crystal-disposing area; the baffle area divides the circuit laminated body into a first electrode and a second electrode; the light emitting diode crystal grain is located inside the storage tank and connected with the bottom side via a connecting pad body; and the phosphor, located inside the storage tank, coats the light emitting diode crystal grain.
Description
Technical field
The utility model is relevant for a kind of light-emitting diode assembly; Be meant especially and a kind ofly use the composite welding body that has different melting points on the metal substrate, and a welding body wherein forms the High Power LED device of the corresponding reflection cup of LED crystal particle simultaneously.
Background technology
Light-emitting diode is because the increase of brightness and the raising of efficient are very likely replacing traditional lighting apparatus in the future.But also be because of in the lifting of brightness and the increase of power, or with AC driving, the heat that is produced is also more and more serious to the impact that encapsulation is caused.See also shown in Figure 1ly, it is existing light-emitting diode assembly cross-sectional view.Existing light-emitting diode assembly 1 includes: a substrate 11, a line layer 12 and a plurality of LED crystal particle 13.This line layer 12 is arranged on this substrate 11, is provided with a copper wire layer 122 of circuit layout in this line layer 12, follows glue-line 121 with one again and is connected with this substrate 11, at last these copper wire layer 122 outer coating one insulating barriers 123.And a plurality of LED crystal particles 13 are connected on this insulating barrier 123 with a crystal-bonding adhesive 14.This crystal-bonding adhesive 14 is to be organism; Heat passes coefficient and is on duty mutually; So heat energy that when a plurality of LED crystal particle 13 is luminous, is produced; Must be through this crystal-bonding adhesive 14, this insulating barrier 123, this copper wire layer 122, then glue-line 121 conducts on this substrate 11, therefore can't fast a plurality of LED crystal particle 13 torrid zones that produce be left.
Please consult shown in Figure 2ly again, it is another existing light-emitting diode assembly cross-sectional view.Existing light-emitting diode assembly 2 includes: a substrate 21, a line layer 22 and a plurality of LED crystal particle 23.This line layer 22 is arranged on this substrate 21, is provided with a copper wire layer 222 of circuit layout in this line layer 22, follows glue-line 221 with one again and is connected with this substrate 21, at last these copper wire layer 222 outer coating one insulating barriers 223.This line layer 22 offers an opening 25, and a plurality of LED crystal particle 23 is arranged in this opening 25, and is directly connected on this circuit board 21 with a crystal-bonding adhesive 24.Therefore the heat energy that when a plurality of LED crystal particle 23 is luminous, is produced can directly conduct on this substrate 21 through this crystal-bonding adhesive 24, so hot transfer efficiency is than above-mentioned light-emitting diode assembly 1 height.But the sidelight that LED crystal particle 23 throwed of this existing light-emitting diode assembly 2 can be stopped by this line layer 22, can't use fully.Therefore how to go to solve the above problems, be always the dealer urgently remain scheme and the improvements seeking to solve.
Summary of the invention
A purpose of the utility model is to provide a kind of High Power LED device with metal substrate; It is made with metal material through metal substrate; Replace the design of original printed circuit board (PCB), can be directly when reaching the light-emitting diode start and the effect of quick heat radiating.
Another purpose of the utility model is to provide a kind of High Power LED device with metal substrate; It is through the pairing reflection cup of LED crystal particle; Simultaneously for carrying the welding body design of LED crystal particle, to reach effect stable and that make fast.
Another purpose of the utility model is to provide a kind of High Power LED device with metal substrate; Its through LED crystal particle respectively to the reflection cup that abuts should be arranged, to reach the effect that makes full use of light that each LED crystal particle is sent.
Another purpose of the utility model is to provide a kind of High Power LED device with metal substrate; It is through being separated into a circuit layer body at one first electrode and one second electrode; Connection projects the different light-emitting diode of light color that appears with this LED crystal particle, possesses the more effect of the High Power LED device of high color rendering to reach.
For reaching above-mentioned purpose, a kind of High Power LED device of the utility model with metal substrate, it includes:
One metal substrate, it more includes:
One crystalline setting area;
One preplating material layer, it is coated on this crystalline setting area;
One support is from pad, and it has at least one storage tank, and this support is connected with this preplating material layer from pad, and this storage tank has a top surface side and a bottom surface side, and this top surface side and this bottom surface side have a distance apart, and has a reflecting surface body around this storage tank outer rim;
One circuit layer body, it is connected with this metal substrate, and this circuit layer body has a through hole and a baffle area, and this through hole is to should the crystalline setting area, and this baffle area is separated into one first electrode and one second electrode with this circuit layer body;
At least one LED crystal particle, it is positioned at this storage tank, this LED crystal particle with one in succession pad be connected with this bottom surface side;
At least one fluorophor, it is arranged in this storage tank, and this fluorophor coats this LED crystal particle;
One retaining glue portion, it has an accommodation space, this retaining glue portion this circuit layer body that is posted by connecting, and make this support leave pad to be arranged in this accommodation space;
One silica gel portion, it has a refraction curved surface, and this silica gel portion is arranged in this accommodation space, and makes this support be arranged in this silica gel portion from pad and a plurality of fluorophor.
Described High Power LED device with metal substrate, wherein, this support is that metal material is made from pad, this support has one first fusing point from pad.
Described High Power LED device with metal substrate, wherein, this in succession pad be that metal material is made, this in succession pad have one second fusing point, this first melting temperature is higher than this second melting temperature.
Described High Power LED device with metal substrate, wherein, this support is that tin is made from pad.
Described High Power LED device with metal substrate, wherein, pad is made for following glue in succession for this.
Described High Power LED device with metal substrate, wherein, the sectional area of this top surface side is greater than the sectional area of this bottom surface side.
Described High Power LED device with metal substrate; Wherein, This High Power LED device with metal substrate more includes at least one light-emitting diode; This light-emitting diode is arranged in this retaining glue portion, and this light-emitting diode projects the light color that appears and this LED crystal particle, and to project the light color that appears different.
Described High Power LED device with metal substrate; Wherein, It is made that this retaining glue portion and silica gel portion are the transparent material that can provide light to pass through; Can make be arranged in the light and this fluorophor mixed light that this support projects from this LED crystal particle of pad after, the light that projects with this light-emitting diode again carries out mixed light, possesses the more effect of the High Power LED device of high color rendering to reach.
Description of drawings
Fig. 1 is existing light-emitting diode assembly cross-sectional view;
Fig. 2 is another existing light-emitting diode assembly cross-sectional view;
Fig. 3 A is that structural representation is faced in the High Power LED device preferred embodiment that the utlity model has metal substrate;
Fig. 3 B is the High Power LED device preferred embodiment side-looking cross-sectional view that the utlity model has metal substrate.
Description of reference numerals: 1,2-light-emitting diode assembly; 11,21-substrate; 12,22-line layer; 121,221-follows glue-line; 122,222-copper wire layer; 123,223-insulating barrier; 13,23-LED crystal particle; 14,24-crystal-bonding adhesive; The 25-opening; The 3-light-emitting diode assembly; The 30-metal substrate; The 301-crystalline setting area; 302-preplating material layer; 31-circuit layer body; 310-first electrode; 310a-second electrode; The 311-through hole; The 312-baffle area; The 313-following layer; 314-main circuit layer; The 315-insulating barrier; 32-retaining glue portion; The 322-accommodation space; The 33-support is from pad; The 331-storage tank; 332-is pad in succession; The 333-top surface side; The 334-bottom surface side; 335-reflecting surface body; The 34-LED crystal particle; 35-silica gel portion; 351-reflects curved surface; The 36-fluorophor; The 39-light-emitting diode; The d-distance.
Embodiment
See also shown in Fig. 3 A to Fig. 3 B, it is respectively positive TV structure of High Power LED device preferred embodiment and the side-looking cross-sectional view that the utlity model has metal substrate.The utlity model has the High Power LED device 3 of metal substrate, include: a metal substrate 30, a circuit layer body 31, at least one LED crystal particle 34, at least one fluorophor 36, a retaining glue portion 32 and a silica gel portion 35.The metal substrate 30 of the utility model more includes: a crystalline setting area 301, a preplating material layer 302 and a support are from pad 33.The heat that this metal substrate 30 is produced when directly conducting these LED crystal particle 34 starts; Therefore by single copper material, aluminium or by most of copper material, that aluminium adds the little metal material is made, only the printed portions copper foil material is different with general printed circuit board (PCB).In the utility model preferred embodiment; These metal substrate 30 central parts have a crystalline setting area 301; This crystalline setting area 301 is absorbed in this metal substrate 30 about 0.2mm; And being coated with a preplating material layer 302 on this crystalline setting area 301, this preplating material layer 302 is processed for metal, is beneficial to this support and is connected in this crystalline setting area 301 from pad 33.This support has at least one storage tank 331 from pad 33; This support is connected with this preplating material layer 302 from pad 33; This storage tank 331 has a top surface side 333 and a bottom surface side 334, and this top surface side 333 has one apart apart from d with this bottom surface side 334, and the sectional area of this top surface side 333 is greater than the sectional area of this bottom surface side 334; Make this storage tank 331 be rendered as down trapezoidal shape, and have a reflecting surface body 335 around these storage tank 331 outer rims.And be the light energy losses that prevents that this LED crystal particle 34 from being projected; Can polish around these storage tank 331 outer rims; Form this reflecting surface body 335; Can also make being coated with the reflection material or the reflector plate mode that has been sticked around these storage tank 331 outer rims, more than can the light energy that this LED crystal particle 34 is projected be reflexed to the effect outside this top surface side 333, all be the purpose that forms this reflecting surface body 335.
And this circuit layer body 31 is made and is connected with a side of this metal substrate 30 to electroplate etching mode, and this circuit layer body 31 more includes: a main circuit layer 314, a following layer 313 and an insulating barrier 315.Has circuit layout on this main circuit layer 314.This following layer 313 is positioned at a side of this main circuit layer 314, and is connected with this metal substrate 30.This insulating barrier 315 is covered on the opposite side of this main circuit layer 314.This circuit layer body 31 has a through hole 311 and a baffle area 312, and this through hole 311 is positioned at the central part of this circuit layer body 31, and directly and this crystalline setting area 301 be conducted.And extend along these circuit layer body 31 diagonals this baffle area 312, this circuit layer body 31 is separated into two right-angled triangles, and these baffle area 312 sidedness is one first electrode 310 and one second electrode 310a.
This LED crystal particle 34 is the horizontal LED crystal particle, is arranged in this support on pad 33 with array way.In the utility model preferred embodiment, this LED crystal particle 34 is four, and this storage tank 331 also is four, and each LED crystal particle 34 is corresponding respectively and be arranged in this storage tank 331 one by one.Certainly also can design this LED crystal particle 34 of other quantity; Be arranged in this storage tank 331 of corresponding quantity; Or this storage tank 331 is designed to one; This LED crystal particle 34 of ccontaining four or other quantity, so variation of this LED crystal particle 34 and this storage tank 331 quantity is no longer added narration in this.
And this LED crystal particle 34 with one in succession pad 332 be connected with this bottom surface side 334.This in succession pad 332 can be that then glue is made, coat on this bottom surface side 334, this LED crystal particle 34 is directly sticked together on it.Certainly the heat energy that is produced when making this LED crystal particle 34 luminous, all the material by metal conducts on this metal substrate 30, reaches more efficient heat radiation, in this will design this support leave pad 331 and this in succession pad 332 all be made with the tin material.And this support has one first fusing point from pad 331, this in succession pad 332 have one second fusing point, and this first melting temperature is higher than this second melting temperature.Therefore when desire is connected in this bottom surface side 334 with this LED crystal particle 34; Only need be heated between this first melting temperature and this second melting temperature; Should support be solid from pad 331 this moment; And this in succession pad 332 be the liquid of melting, can this LED crystal particle 34 be connected on this bottom surface side 334.This fluorophor 36 is arranged in this storage tank 331, and these fluorophor 36 these LED crystal particles 34 of coating, therefore when this LED crystal particle 34 projects blue light energy, behind these fluorophor 36 mixed lights, can demonstrate the light energy of white.
This retaining glue portion 32 has an accommodation space 322, this retaining glue portion 32 this circuit layer body 31 that is posted by connecting, and make this support be arranged in this accommodation space 322 from pad 33.This silica gel portion 35 is that the silica gel material is made; This silica gel portion 35 is arranged in this accommodation space 322; This silica gel portion 35 has a refraction curved surface 351, and in the utility model preferred embodiment, this refraction curved surface 351 is a plane; Certainly also can be designed to appear to the recessed or protruding curved surface of this metal substrate 30, so that more light energy is concentrated use.
The utlity model has in the preferred embodiment of High Power LED device of metal substrate; This High Power LED device 3 more includes at least one light- emitting diode 39, and 39 of this light-emitting diodes project the light color that appears and 34 of this LED crystal particles, and to project the light color that appears different.These light-emitting diode 39 vertical LEDs; The vertical LED of packaged type or bare crystal type no matter; All can be positioned on this circuit layer body 31, two utmost point pin striden respectively establish this baffle area 312 and be connected with this first electrode 310 and this second electrode 310a and carry out start.Certainly the voltage that is used when this LED crystal particle 34 and this light-emitting diode 39 is not simultaneously; Need this light-emitting diode 39 is forwarded to a neutral electrode district, carry out again carrying out serial or parallel connection with this LED crystal particle 34 or this first electrode 310 and this second electrode 310a.In the utility model preferred embodiment; This light-emitting diode 39 is arranged in this retaining glue portion 32; And this retaining glue portion 32 and this silica gel portion 35 is made for the transparent material that can provide light to pass through, can be directly with 39 light that project another color of this light-emitting diode, and the light that is throwed via these fluorophor 36 mixed lights with this LED crystal particle 34; Carry out mixed light, make to have 3 effects that project different colour systems of High Power LED device of metal substrate.And be to make the High Power LED device 3 that the utlity model has metal substrate increase collection area; And improve luminous flux in the regional uniform distribution of optically focused; To reach the effect that effective reduction is dazzled light and increased luminous efficiency; Also can set up at least one lens (not shown), this support this moment can be offered the perforation (not shown) from pad 33, in order to being connected with these lens.
The High Power LED device 3 that above-mentioned the utility model the utlity model has metal substrate is the disappearance that overcomes prior art really, satisfies the demand of industrial circle and improves industrial competitiveness.The all dark well-off progressive of executing has the value of industry on purpose of the utility model and the effect, and is present new utility model not seen before on the market, meets the novelty and the progressive important document of utility model patent fully, files an application in the whence in accordance with the law.
Only the above is merely the preferred embodiment of the utility model, when can not with the scope implemented of qualification the utility model.The equalization of promptly being done according to the utility model claim generally changes and modifies, and all should still belong in the scope that the utility model patent contains, sincerely please your auditor's explicit example for reference, and it is accurate to pray favour, is that institute is to praying.
Claims (9)
1. the High Power LED device with metal substrate is characterized in that, includes:
One metal substrate, it more includes:
One crystalline setting area;
One preplating material layer, it is coated on this crystalline setting area;
One support is from pad, and it has at least one storage tank, and this support is connected with this preplating material layer from pad, and this storage tank has a top surface side and a bottom surface side, and this top surface side and this bottom surface side have a distance apart, and has a reflecting surface body around this storage tank outer rim;
One circuit layer body, it is connected with this metal substrate, and this circuit layer body has a through hole and a baffle area, and this through hole is to should the crystalline setting area, and this baffle area is separated into one first electrode and one second electrode with this circuit layer body;
At least one LED crystal particle, it is positioned at this storage tank, this LED crystal particle with one in succession pad be connected with this bottom surface side;
At least one fluorophor, it is arranged in this storage tank, and this fluorophor coats this LED crystal particle;
One retaining glue portion, it has an accommodation space, this retaining glue portion this circuit layer body that is posted by connecting, and make this support leave pad to be arranged in this accommodation space;
One silica gel portion, it has a refraction curved surface, and this silica gel portion is arranged in this accommodation space, and makes this support be arranged in this silica gel portion from pad and a plurality of fluorophor.
2. the High Power LED device with metal substrate as claimed in claim 1 is characterized in that, this support is that metal material is made from pad, and this support has one first fusing point from pad.
3. the High Power LED device with metal substrate as claimed in claim 2 is characterized in that, this in succession pad be that metal material is made, this in succession pad have one second fusing point, this first melting temperature is higher than this second melting temperature.
4. the High Power LED device with metal substrate as claimed in claim 1 is characterized in that, this support is that tin is made from pad.
5. the High Power LED device with metal substrate as claimed in claim 1 is characterized in that, pad is made for following glue in succession for this.
6. the High Power LED device with metal substrate as claimed in claim 1 is characterized in that the sectional area of this top surface side is greater than the sectional area of this bottom surface side.
7. the High Power LED device with metal substrate as claimed in claim 1; It is characterized in that; This High Power LED device with metal substrate more includes at least one light-emitting diode; This light-emitting diode is arranged in this retaining glue portion, and this light-emitting diode projects the light color that appears and this LED crystal particle, and to project the light color that appears different.
8. the High Power LED device with metal substrate as claimed in claim 1 is characterized in that, this retaining glue portion is made for the transparent material that can provide light to pass through.
9. the High Power LED device with metal substrate as claimed in claim 1 is characterized in that, this silica gel portion is made for the transparent material that can provide light to pass through.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204624557U CN202384332U (en) | 2011-11-18 | 2011-11-18 | High power light emitting diode apparatus having metal substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204624557U CN202384332U (en) | 2011-11-18 | 2011-11-18 | High power light emitting diode apparatus having metal substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202384332U true CN202384332U (en) | 2012-08-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204624557U Expired - Fee Related CN202384332U (en) | 2011-11-18 | 2011-11-18 | High power light emitting diode apparatus having metal substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202384332U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104122631A (en) * | 2013-04-29 | 2014-10-29 | 鸿富锦精密工业（深圳）有限公司 | Optical fiber connector circuit board and optical fiber connector |
-
2011
- 2011-11-18 CN CN2011204624557U patent/CN202384332U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104122631A (en) * | 2013-04-29 | 2014-10-29 | 鸿富锦精密工业（深圳）有限公司 | Optical fiber connector circuit board and optical fiber connector |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120815 Termination date: 20121118 |