CN202307897U - Novel laminated thin film solar cell - Google Patents
Novel laminated thin film solar cell Download PDFInfo
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- CN202307897U CN202307897U CN 201120335946 CN201120335946U CN202307897U CN 202307897 U CN202307897 U CN 202307897U CN 201120335946 CN201120335946 CN 201120335946 CN 201120335946 U CN201120335946 U CN 201120335946U CN 202307897 U CN202307897 U CN 202307897U
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- photoelectric conversion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a novel laminated thin film solar cell, which comprises a plurality of photoelectric units integrally connected in series, wherein each photoelectric unit is formed by connecting a plurality of sub-photoelectric conversion units in parallel; the sub-photoelectric conversion units are formed by connecting sub-cells consisting of first conducting poles, first photoelectric conversion units, second photoelectric conversion units, second conducting poles and functional films in series; a transparent conducting pole or a combination of a transparent conducting pole and an insulating film can be selected for each functional film as required; in upper and lower layers of sub-cells, the quantity of the sub-cells connected in series to each parallel circuit is determined by the open-circuit voltage ratio of upper and lower layers of photoelectric conversion units; each film layer is provided with an insulating groove and a conducting channel by scribing, so that circuit connection is realized; and meanwhile, when the conducting pole above each photoelectric conversion unit is provided with an insulating groove, the insulating channel is required to pass through the photoelectric conversion layer, so that the formation of a photovoltaic dead area is prevented, and photoelectric current output is increased. Due to the adoption of the novel laminated thin film solar cell, the converting efficiency of the laminated solar cell is increased to the maximum extent, and the advantages of the laminated thin film solar cell are more remarkable.
Description
Technical field
The utility model relates to a kind of novel laminated film solar cell, especially a kind of overlapping thin film solar battery.
Background technology
Thin-film solar cells occupies a tiny space in area of solar cell owing to have advantages such as low cost and low light level effect, is comparatively fast being developed in the last few years.Because the single thin film solar cell is owing to the restriction of material and technology itself, its transformation efficiency is lower, and industrial circle has been developed various homotypes or special-shaped overlapping thin film solar battery, has improved electricity conversion.Like amorphous silicon laminated, amorphous silicon/amorphous germanium silicon lamination, amorphous silicon/microcrystalline silicon tandem, CIGS lamination etc.Spectral response range widened in these laminated construction, improved efficiency of light absorption.Yet, because being equivalent to up and down sub-battery, existing laminated construction directly connects, because electron current does not match, make the photoelectric current of quite a few become in-fighting, and make the raising of lamination solar cell on transformation efficiency receive very big restriction.Though on production technology, can notice that all the thickness of controlling each electron current solves matching problem usually, not reach desirable requirement all the time.
The patent No. is that 200720172723.5 " a kind of lamination solar cell " discloses a kind of technical scheme of attempting to solve this problem as shown in Figure 1; Through in the middle of two sub-batteries of lamination opto-electronic conversion, adding the layer of transparent conductive electrode; Combine with plated film through groove; Make up and down two-layer solar subcells form parallel-connection structure, each parallel-connection structure is connected again then, thereby solves the unmatched problem of electron current.Yet; This scheme has solved the matching problem of electric current, has but produced the matching problem of voltage, if two sub-battery materials are different up and down for lamination solar cell; Its voltage is also inequality, and this parallel-connection structure must cause the loss part power that do not match because of voltage.Do not reach the effect that improves power output.In addition; Because part photoelectric conversion layer unit forms the dead band when line; Because the horizontal internal resistance of semiconductive thin film much larger than vertical internal resistance, causes this part dead band photoelectric conversion unit not only to not contribution of power output, and because its internal resistance effect; Consume the part photogenerated current on the contrary, cause power output to descend.
Summary of the invention
Goal of the invention: the purpose of the utility model is to solve the voltage and current matching problem of various overlapping thin film solar batteries, reducing the in-fighting of photogenerated current to greatest extent, thereby improves the transformation efficiency that power output improves solar cell.
Technical scheme: the upper and lower of lamination solar cell are made some photoelectrons unit respectively, and each subelement is by the series connection of plurality of sub solar cell, and in the levels, the ratio of the number of sub-solar cell is confirmed by the minimum ratio of its open circuit voltage.Each upper strata subelement and lower floor's subelement and be unified into a big photovoltaic element link up the composition output circuit with each photovoltaic element through transparency electrode more then.Because this connecting mode has guaranteed that parallel circuits voltage is identical, series circuit current is identical, guarantees that photogenerated current does not have because therefore the in-fighting that electric current and voltage do not match to be produced has increased power output, has improved the transformation efficiency of solar cell.
X
On: Y
Down=V
Under the oc: V
Oc is last(1)
Concrete scheme is following:
In the bottom dielectric substrate, set up functional rete between first conductive electrode, first photoelectric conversion unit and second photoelectric conversion unit, second conductive electrode, first photoelectric conversion unit and second photoelectric conversion unit are separated, not directly series connection;
Conducting channel and insulated trenches are set on each layer film, and it is identical to make each sub-battery unit form series circuit current, the integrated electro unit that parallel circuits voltage is identical.
When first, second photoelectric conversion unit open circuit voltage was identical, functional film was the 3rd transparent conducting electrode film;
The conducting channel that on each conductive electrode and photoelectric conversion unit, is provided with and the width of insulated trenches be less than 0.1mm, between distance between 0.1mm-0.3mm.
When on second conductive electrode after the 3rd transparent conductive electrode layer after first photoelectric conversion unit and second photoelectric conversion unit insulated trenches being set, insulated trenches need penetrate photoelectric conversion unit, avoids forming the photovoltaic dead band.
When first, second photoelectric conversion unit open circuit voltage was inequality, functional rete was made up of the 3rd transparent conductive electrode, intermediate insulating layer, the 4th transparent conductive electrode;
Conducting channel or insulated trenches are set on each layer film, make each sub-battery unit form the integrated circuit that series circuit voltage is identical, the parallel circuits electric current is identical.
The conducting channel that on each conductive electrode and photoelectric conversion unit, is provided with and the width of insulated trenches be less than 0.1mm, between distance between 0.1mm-0.3mm.
When on second conductive electrode after the 3rd transparent conductive electrode layer after first photoelectric conversion unit and second photoelectric conversion unit insulated trenches being set, insulated trenches need penetrate photoelectric conversion unit, avoids forming the photovoltaic dead band.
The said photoelectric conversion unit of scheme can be any one perhaps several kinds in the film photoelectric converting units such as amorphous silicon membrane, amorphous carbon silicon thin film, amorphous germanium silicon thin film, monocrystalline silicon thin film, polysilicon membrane, microcrystalline silicon film, Nano thin film, CIS, CIGS, CdTe, amorphous HgCdTe.
The said conductive electrode of scheme, transparent conductive electrode all can be made up of among AZO, ITO, the FTO one or several, can two-sided extinction to form, light transmission good film solar cell.
The said insulating barrier of scheme can be SiO
2Rete also can be SiN
4Rete, perhaps other meets the thin-film material of functional requirement to the composite film that also can be made up of these two kinds of films.
As a preferred version, said photoelectric conversion unit is become with a microcrystal silicon NIP roped party by an amorphous silicon PIN knot.Straton battery number is definite by its open circuit voltage ratio up and down for it.
As another preferred version, said photoelectric conversion unit is become with an amorphous germanium silicon NIP roped party by an amorphous silicon PIN knot, and straton battery number is definite by its open circuit voltage ratio up and down for it.
As another preferred version, said photoelectric conversion unit is become with an amorphous carbon silicon NIP roped party by amorphous silicon PIN knot, on it in lower unit sub-battery number definite by its open circuit voltage ratio.
As another preferred version; Said photoelectric conversion unit is become with an amorphous silicon NIP roped party by an amorphous silicon PIN; Because this moment, the photoelectric conversion unit open circuit voltage was identical up and down; Directly parallel connection of photoelectric conversion unit up and down can be by a photoelectricity transparent conductive electrode through solving the problems of the technologies described above like figure below reticle structure between the levels.Simultaneously, as the photoelectric conversion unit in this special case, its levels can be identical cadmium telluride PN junction of bandgap structure or CIGS battery PN junction simultaneously.
Simultaneously, its levels photoelectric conversion unit also can be the combination of above-mentioned each photoelectric conversion unit, and particular circuit configurations is confirmed by the ratio of levels open circuit voltage.
Useful achievement
The utility model utilizes formula 1 to calculate through between first, second converting unit of lamination solar cell, setting up the functional film layer, confirms the sub-battery number of connecting in the levels.Utilize laser scribing then; Conducting channel and insulated trenches are set between levels; Make that the sub-battery of some is connected into identical voltage earlier in the levels, and then and be unified into a bigger photoelectric conversion unit, this bigger sub-battery unit combination is in series.Avoid the photoelectricity loss like this, can increase power output, thereby improved the transformation efficiency of solar cell.
Simultaneously, when the upper strata transparent conductive electrode to photoelectric conversion unit carries out groove, photoelectric conversion unit is also carved thoroughly in the lump, avoided formation photovoltaic dead band to consume photogenerated current like this, further improved the transformation efficiency of solar cell.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the utility model is done specifying further, the advantage of the above-mentioned and/or others of the utility model will become apparent
Accompanying drawing 1 is two kinds of equivalent electric circuits of lamination solar cell
Accompanying drawing 2 is that the circuit of levels open circuit voltage when identical connects
Accompanying drawing 3 is that the circuit of levels open circuit voltage when inequality connects
Embodiment
The upper and lower of lamination solar cell are made some photoelectrons unit respectively, and by the series connection of plurality of sub solar cell, the ratio of the number of sub-solar cell is confirmed by the minimum ratio of its open circuit voltage in the levels subelement in each subelement.Each upper strata subelement and lower floor's subelement and be unified into a big photovoltaic element link up the composition output circuit with each photovoltaic element through transparency electrode more then.Because this connecting mode has guaranteed that parallel circuits voltage is identical, series circuit current is identical, guarantees that photogenerated current does not have because therefore the in-fighting that electric current and voltage do not match to be produced has increased power output, has improved the transformation efficiency of solar cell.
X
On: Y
Down=V
Under the oc: V
Oc is last(1)
Its equivalent circuit diagram is as shown in Figure 1, and figure a is the equivalent electric circuit when open circuit voltage is identical up and down, and figure b is 2: 1 o'clock equivalent electric circuit for open circuit voltage ratio.When open circuit voltage ratio was other numerical value, 1 and 2 quantity can be confirmed according to the ratio quantity of open circuit voltage.
The concrete grammar of realizing this technical scheme is between two photoelectric conversion units of lamination solar cell, to increase two-layer transparent conductive electrode and one deck insulating film layer; Form bottom dielectric substrate, first conductive electrode, first photoelectric conversion unit, the 3rd transparent conductive electrode, intermediate insulation rete, the 4th transparent conductive electrode, second photoelectric conversion unit, the second conductive electrode structure, laser scoring is provided with conducting channel and insulated trenches is guaranteed to form like the described circuit structure of technical scheme through each layer carried out.Open circuit voltage is can be regarded as special case at 1: 1 o'clock, between first, second photoelectric conversion unit, only needs to increase the 3rd transparent conductive electrode,
When said photoelectric conversion unit is become with an amorphous silicon/microcrystal silicon NIP roped party by an amorphous silicon/microcrystal silicon PIN; Because this moment, the photoelectric conversion unit open circuit voltage was identical up and down; Directly parallel connection of photoelectric conversion unit up and down can be by a photoelectricity transparent conductive electrode through solving the problems of the technologies described above like figure below reticle structure between the levels.Simultaneously, as the photoelectric conversion unit in this special case, its levels can be identical cadmium telluride PN junction of bandgap structure or CIGS battery PN junction simultaneously
Be illustrated in fig. 2 shown below, for the film solar battery structure figure of levels open circuit voltage when identical, establish layer of transparent conductive electrode 7 on the substrate 8, establish insulated trenches 701 for 7 layers at transparent conductive electrode, channel width is less than 0.1mm.Above 7 layers, establish photoelectric conversion unit 6, wherein the orlop of photoelectric conversion unit is with being full of insulated trenches 701 simultaneously.On photoelectric conversion unit 6, establish conducting channel 601, channel width is provided with transparent conductive electrode 5 less than 0.1mm above 6, and transparent conductive electrode will be full of raceway groove 601 simultaneously.Establish insulated trenches 501 at 5 layers, channel width is provided with the open circuit voltage photoelectric conversion unit identical with 64 less than 0.1mm on 5, establishes conducting channel 401 at 4 layers simultaneously, and channel width is less than 0.1mm.On 4, establish transparent conductive electrode 3, transparent conductive electrode is full of raceway groove 401 simultaneously, on transparent conductive electrode 3, establishes insulated trenches 301, and channel width is less than 0.1mm, and this insulated trenches penetrates photoelectric conversion layer 4 simultaneously.
In addition, if substrate is a sensitive surface, on transparent conductive electrode 3, need establish one deck structure metal electrode identical with 3.If substrate is not a sensitive surface, then below transparent conductive electrode 7, establishes one deck structure metallic conduction utmost point identical or directly replace 7 with the structure and the 7 identical metallic conduction utmost points with 7.
When the levels open circuit voltage was inequality, film solar battery structure was as shown in Figure 3, on substrate 8, established transparent conductive electrode 9, established insulated trenches 901 at 9 layers simultaneously, and channel width is less than 0.1mm.On 9 layers, set layer photoelectric conversion unit 10, make photoelectricity conversion thin film be full of 901 simultaneously, establish conducting channel 1001 at 10 layers, channel width is less than 0.1mm.Above 10 layers, establish transparent conductive electrode 11, establish insulated trenches 1101 simultaneously, this insulated trenches runs through photoelectric conversion unit 10, and channel width is less than 0.1mm.On 11, establish insulating film layer 12 then, establish conducting channel 1201 simultaneously, channel width is less than 0.1mm.Make dielectric film be full of raceway groove 1101.On 12, establish transparent conductive electrode 13, establish insulated trenches 1301 simultaneously, channel width is full of transparent conductive film simultaneously less than 0.1mm in conducting channel 1201.On 13, establish photoelectric conversion unit 14, establish conducting channel 1401 simultaneously, channel width is full of photoelectricity conversion thin film simultaneously less than 0.1mm in 1301.On 14, establish transparency conducting layer 15, establish insulated trenches 1501 simultaneously, channel width is less than 0.1mm, and insulated trenches runs through photoelectric conversion unit 14.
In addition, if substrate is a sensitive surface, on transparent conductive electrode 3, need establish one deck structure metal electrode identical with 3.If substrate is not a sensitive surface, then below transparent conductive electrode 7, establishes one deck structure metallic conduction utmost point identical or directly replace 7 with the structure and the 7 identical metallic conduction utmost points with 7.
Embodiment one: it is that the upper strata is PIN that present embodiment discloses a kind of concrete structure; Lower floor is the crystalline/micro-crystalline silicon laminated solar cell of NIP; At first on the ultra-clear glasses substrate, establish layer of transparent ITO, between ITO, establish the insulated trenches that width is 0.05mm with the laser scoring mode.On ITO, establish microcrystal silicon P, I, N layer successively, make P layer microcrystal silicon be full of insulated trenches simultaneously.Tie at NIP with the laser scoring mode and to establish conducting channel, the spacing of insulated trenches and conducting channel is 0.1mm, and the conducting channel width is 0.05mm.On the NIP microcrystalline silicon junction, establish one deck ITO again, make the conductive electrode material be full of conducting channel simultaneously, on ITO, establish insulated trenches according to the laser scribing mode, the spacing of insulated trenches and conducting channel is 0.1mm, and the conducting channel width is 0.05mm.On ITO, establish N, I, P layer successively, form the PIN knot, make the N layer material be full of insulated trenches simultaneously, between the PIN knot, establish conducting channel with the laser scribing mode, the spacing of conducting channel and insulated trenches is 0.1mm, and the conducting channel width is 0.05mm.Tie at PIN and to establish ITO and aluminum metal composite conducting layer; And at the composite conducting interpolar insulated trenches is set with the laser scribing mode; The spacing of insulated trenches and lower floor's conducting channel is 0.1mm, and the insulated trenches width is 0.05mm, and insulated trenches penetrates opto-electronic conversion PIN layer.
Embodiment two: it is that the upper strata is the laminate film structure that amorphous carbon silicon PIN knot, lower floor tie for microcrystal silicon PIN that present embodiment discloses a kind of concrete structure, and open circuit voltage ratio is 2: 1 lamination solar cell structure up and down, shown in accompanying drawing four.On ultra-clear glasses substrate 8, establish transparent conductive electrode 16; Between conductive electrode, establish insulated trenches 1601 with the line mode; The insulated trenches width is that 0.02mm. establishes P, I, N rete 17,18,19 successively on transparent conducting electrode film, makes the P layer film fill insulated trenches simultaneously.Between the NIP microcrystalline silicon film, establish conducting channel 1901 with the line mode, conducting channel and insulated trenches interbody spacer are 0.05mm, and the conducting channel width is 0.02mm.Transparent conductive electrode 20 is set on nip layer then, at the electrically conducting transparent interpolar insulated trenches 2001 is set with the line mode, distance is 0.05mm between insulated trenches and conducting channel, and the insulated trenches width is 0.02mm, and insulated trenches penetrates nip layer simultaneously.On transparent conductive electrode, establish SiO
2Insulating film layer 21 is established conducting channel 2101 with the line mode simultaneously, and conducting channel and insulated trenches interbody spacer are 0.05mm, and the conducting channel width is 0.02mm.Insulating film layer is full of 2001 simultaneously.On insulating film layer, establish transparent conductive electrode layer 22, make transparent conductive electrode fill 2101 conducting channels, establish insulated trenches 2201 with the line mode simultaneously, distance is 0.05mm between insulated trenches and conducting channel, and the insulated trenches width is 0.02mm.On transparent conductive electrode layer 22, establish N, I, P amorphous carbon silicon layer 23,24,25 then, make the N layer film fill insulated trenches simultaneously.Between PIN amorphous carbon silicon thin film, establish conducting channel 2501 with the line mode, conducting channel and insulated trenches interbody spacer are 0.05mm, and the conducting channel width is 0.02mm.On the P layer, establish ITO and aluminum metal composite conducting layer 26; And at the composite conducting interpolar insulated trenches 2601 is set with the laser scribing mode; The spacing of insulated trenches and lower floor's conducting channel is 0.1mm, and the insulated trenches width is 0.05mm, and insulated trenches penetrates opto-electronic conversion PIN layer.
The utility model provides a kind of thinking and method of novel laminated film solar cell structure; The method and the approach of concrete this technical scheme of realization are a lot, and the above only is the preferred implementation of the utility model, should be understood that; For those skilled in the art; Under the prerequisite that does not break away from the utility model principle, can also make some improvement and retouching, these improvement and retouching also should be regarded as the protection range of the utility model.The all available prior art of each part not clear and definite in the present embodiment realizes.
Claims (7)
1. a novel laminated film solar cell comprises the bottom dielectric substrate, first conductive electrode, first photoelectric conversion unit, second photoelectric conversion unit, and second conductive electrode is characterized in that,
Between the lamination photoelectric conversion unit, set up functional rete, first photoelectric conversion unit and second photoelectric conversion unit are separated, not directly series connection;
Conducting channel and insulated trenches are set on each layer film, and it is identical to make first, second photoelectric conversion unit form series circuit current, the integrated electro unit that parallel circuits voltage is identical.
The conductive electrode of said each layer use all is made as transparent conductive electrode, and is good to form light transmission, can two-sidedly receive the structure of light.
2. a kind of novel laminated film solar cell as claimed in claim 1 when first, second photoelectric conversion unit open circuit voltage is identical, is characterized in that the battery part is following
The bottom dielectric substrate, first conductive electrode, first photoelectric conversion unit, the 3rd transparent conductive electrode, second photoelectric conversion unit, second conductive electrode, wherein the 3rd transparent conductive electrode is to be used for the separately functional rete of first, second photoelectric conversion unit;
Conducting channel or insulated trenches are set on each layer film, make each sub-battery parallel connection of levels form the identical sub-battery unit of output current, each sub-battery unit series connection forms output circuit.
3. a kind of novel laminated film solar cell as claimed in claim 2, the width that it is characterized in that conducting channel and insulated trenches be less than 0.1mm, between distance between 0.1mm-0.3mm.
4. a kind of novel laminated film solar cell as claimed in claim 2 is characterized in that the conductive electrode layer setting after photoelectric conversion unit penetrates the insulated trenches of photoelectric conversion unit, avoids forming the photovoltaic dead band.
5. a kind of novel laminated film solar cell as claimed in claim 1 when first, second photoelectric conversion unit open circuit voltage is inequality, is characterized in that the battery part is following
The bottom dielectric substrate; First conductive electrode; First photoelectric conversion unit; The 3rd transparent conductive electrode, intermediate insulating layer, the 4th transparent conductive electrode, second photoelectric conversion unit, second conductive electrode, wherein the 3rd transparent conductive electrode, intermediate insulating layer, the 4th transparent conductive electrode are the functional retes that is used for separating first photoelectric conversion unit and second photoelectric conversion unit;
Conducting channel or insulated trenches are set on each layer film, make the integrated circuit that each layer formation series circuit voltage is identical, the parallel circuits electric current is identical.
6. a kind of novel laminated film solar cell as claimed in claim 5 is characterized in that, the width of conducting channel and insulated trenches is less than 0.1mm, between distance between 0.1mm-0.3mm.
7. a kind of novel laminated film solar cell as claimed in claim 5 is characterized in that the conductive electrode layer setting after photoelectric conversion unit penetrates the insulated trenches of photoelectric conversion unit, avoids forming the photovoltaic dead band.
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| CN 201120335946 CN202307897U (en) | 2011-08-26 | 2011-08-26 | Novel laminated thin film solar cell |
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| CN 201120335946 CN202307897U (en) | 2011-08-26 | 2011-08-26 | Novel laminated thin film solar cell |
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| CN202307897U true CN202307897U (en) | 2012-07-04 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956650A (en) * | 2011-08-26 | 2013-03-06 | 刘莹 | Novel laminated thin-film solar battery |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956650A (en) * | 2011-08-26 | 2013-03-06 | 刘莹 | Novel laminated thin-film solar battery |
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Granted publication date: 20120704 Termination date: 20120826 |