CN202306078U - LCD (liquid crystal display) panel - Google Patents
LCD (liquid crystal display) panel Download PDFInfo
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- CN202306078U CN202306078U CN2011203987623U CN201120398762U CN202306078U CN 202306078 U CN202306078 U CN 202306078U CN 2011203987623 U CN2011203987623 U CN 2011203987623U CN 201120398762 U CN201120398762 U CN 201120398762U CN 202306078 U CN202306078 U CN 202306078U
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Abstract
The utility model discloses an LCD (liquid crystal display) panel. The LCD panel comprises a plurality of pixels, multiple lines of scanning lines and multiple rows of data lines, wherein the multiple lines of scanning lines are made of first metal layers, each pixel contains a plurality of sub-pixels, and each sub-pixel contains a pixel electrode, a thin film transistor and a common electrode line; and each common electrode line contains a main/branch area, a first shielded metal area and a second shielded metal area, the first shielded metal area and the second shielded metal area are parallel to the multiple lines of scanning lines and are connected to the main/branch area, and the multiple rows of data lines and the common electrode lines are all made of second metal layers. Because the scanning lines and the common electrode lines are made of different metal layers in different etching processes, the distances between the scanning lines and the common electrode lines can be shortened, and the widths of a part of common electrode lines used as the shielded metal areas also can be appropriately reduced, so that the aperture ratio of the pixels can be improved.
Description
Technical field
The utility model relates to a kind of display panels, refers to a kind of display panels with three grid type (tri-gate) dot structures of high aperture especially.
Background technology
Consumption electronic product generally adopts frivolous flat-panel monitor now, and wherein LCD is widely used by various electronic equipments such as TV, mobile phone, personal digital assistant, digital camera, computer screen or notebook computer etc. gradually.
(Thin Film Transistor, TFT) drive pattern of the dot structure of LCD mainly can be divided into two kinds of single grid type (single-gate) dot structure and three grid type (tri-gate) dot structures to thin film transistor (TFT).Under resolution n * m, the sweep trace that the LCD of three grid type dot structures has and the number of source electrode line are respectively 3m bar and n bar, and the sweep trace of the LCD of single grid type dot structure and source electrode line number are m bar and 3n bar.In other words; Under identical resolution; Compared to display panel with single grid type dot structure; Number of scanning lines with display panel of three grid type dot structures increases to three times, and the data line number then is reduced to 1/3rd, and the display panel that therefore has three grid type dot structures uses more grid drive chip and less source driving chip.Because the cost and the power consumption of grid drive chip are all low than source driving chip, therefore adopt the design of three grid type dot structures can reduce cost and power consumption.
See also Fig. 1, Fig. 1 is the vertical view of sub-pixel of three grid type pixel liquid crystal display panels of prior art.Display panels has a plurality of pixels, and each pixel is made up of three subpixels 100 (being respectively red sub-pixel, green sub-pixels and blue subpixels) at least.Sub-pixel 100 comprises thin film transistor (TFT) 102 and pixel electrode 112.The grid of thin film transistor (TFT) 102 is electrically connected to sweep trace (Scan line) 104, and source electrode is electrically connected to data line (Date line) 106, and drain electrode is electrically connected to pixel electrode 112.In fact pixel electrode 112 is covered on common electrode wire 108 and shielded metal (shielding metal) district 110, but for ease of explanation, in Fig. 1, only draws the relative position of pixel electrode 112.Common electrode wire 108 is used to provide a common electric voltage, and common electrode wire 108 forms a MM CAP with pixel electrode 112 overlapping parts.Import through sweep trace 104 when sweep signal, make that data-signal was passed to pixel electrode 112 by data line 106 via the thin film transistor (TFT) of opening 102, makes it be charged to required voltage when thin film transistor (TFT) 102 was opened.Being positioned at pixel electrode 112 beneath liquid crystal molecules can make sub-pixel 100 demonstrate different brightness according to its rotation direction of voltage difference control of this data-signal that puts on pixel electrode 112 and this common electric voltage.When sweep trace 104 did not receive sweep signal, liquid crystal molecule still can be kept its rotation direction because of the voltage difference of this MM CAP this common electric voltage of storage and this data-signal, till thin film transistor (TFT) 102 is received sweep signal next time.In order to increase the capacitance of MM CAP, and reduce parasitic capacitance effect, shielded metal district 110 can be set on sweep trace 104 both sides.Shielded metal district 110 electrically connects through opening 114 with common electrode wire 108, makes shielded metal district 110 and common electrode wire 108 remain on same current potential, receives the influence of stray capacitance with the data-signal of avoiding putting on pixel electrode 112.
In the prior art, the grid of thin film transistor (TFT) 102, shielded metal district 110 are to be made up of the first metal layer with sweep trace 104, and the source electrode of thin film transistor (TFT) 102 and drain electrode, data line 106 are to be made up of second metal level with common electrode wire 108.Metal levels such as thin film transistor (TFT) 102, shielded metal district 110, sweep trace 104, data line 106 and common electrode wire 108 are defined as the lightproof part of sub-pixel 100.And the aperture opening ratio of sub-pixel 100 (aperture ratio) is defined as the area of light-permeable part and the ratio of sub-pixel 100 total areas (area that comprises lightproof part).The aperture opening ratio of sub-pixel 100 directly influences the utilization of backlight and the brightness of display panel.Aperture opening ratio is big more, and the brightness of LCD is big more, and contrast is good more.In order to improve aperture opening ratio, must reduce the area of lightproof part as far as possible, also need minimize the pixel total area simultaneously.Therefore, thin film transistor (TFT) 102 live widths more little or sweep trace 104 and data line 106 are thin more, and aperture opening ratio is high more.
Yet, being subject to processing procedure, the live width W1 of the sweep trace 104 generally live width W2 than data line 106 is big, and fixing apart from d1 by keeping between shielded metal district 110 of processing with one deck metal level and the sweep trace 104.These factors all can make pixel aperture ratio reduce.
Though so use the display panels of three grid type dot structures to have advantage low-cost and low power consumption, the problem that pixel aperture ratio reduces is still treated further improvement.
The utility model content
Therefore, the purpose of the utility model provides a kind of display panels that improves pixel aperture ratio that has, to solve prior art problems.
In order to reach the purpose of the utility model; The utility model discloses a kind of display panels, and it comprises the sweep trace that a plurality of pixels, multirow are parallel each other and court's one first direction extends and multiple row is parallel each other and the data line of court's one second direction extension.Said second direction is perpendicular to said first direction.Said fine scanning line is to process with a first metal layer, is used for transmitting sweep signal.Said multi-column data line is to process with one second metal level, is used for transmission of data signals.Each pixel comprises a plurality of sub-pixels.Each sub-pixel comprises: a pixel electrode is formed by a transparency conducting layer; One thin film transistor (TFT), said thin film transistor (TFT) are to be connected with said pixel electrode, said sweep trace and said data line one to one; An and common electrode line; Comprise a main Zhi Ganqu, one first shielded metal district and a secondary shielding metal area; Said first shielded metal district and said secondary shielding metal area are parallel to said fine scanning line and are connected in said main Zhi Ganqu, and said common electrode wire is made up of said second metal level.
According to the embodiment of the utility model, the main Zhi Ganqu of said common electrode wire is cross.
According to the embodiment of the utility model, an insulation course is arranged between said the first metal layer and said second metal level.
According to the embodiment of the utility model, be positioned at wherein data line both sides and be connected in wherein that pairing two common electrode wire of two pixels of one scan line are to electrically connect.
Embodiment according to the utility model; Said display panels comprise in addition two run through said insulation course opening; Said transparency conducting layer is arranged on said two openings and the said the first metal layer, makes said two common electrode wire electrically connect through institute's transparency conducting layer and said the first metal layer.
According to the embodiment of the utility model, the said main Zhi Ganqu of said two common electrode wire electrically connects through institute's transparency conducting layer and said the first metal layer.
According to the embodiment of the utility model, the said first shielded metal district of said two common electrode wire or the said secondary shielding metal area of said two common electrode wire are to electrically connect through institute's transparency conducting layer and said the first metal layer.
Compared to prior art, the utility model provides a kind of display panels.The sweep trace of this display panels is to be processed by the first metal layer, and data line and common electrode wire are then processed by second metal level.Because sweep trace is to be formed at different etch process by the different metal layer with common electrode wire; Not only the distance between sweep trace and the common electrode wire can shorten; A part also can suitably reduce as the width of the common electrode wire in shielded metal district, therefore can improve pixel aperture ratio.
For letting the foregoing of the utility model can be more obviously understandable, hereinafter is special lifts preferred embodiment, and cooperates appended graphicly, elaborates as follows:
Description of drawings
Fig. 1 is the vertical view of sub-pixel of three grid type pixel liquid crystal display panels of prior art.
Fig. 2 has the synoptic diagram of the LCD of three grid type dot structures for the utility model one preferred embodiment.
Fig. 3 has illustrated the circuit diagram of the three grid type pixels of the utility model.
Fig. 4 is the top view of sub-pixel of the display panel of the utility model first embodiment.
Fig. 5 is the synoptic diagram of pixel of the display panel of the utility model second embodiment.
Fig. 6 is the sectional view of the C-C ' line segment of Fig. 5.
Fig. 6 to Figure 10 is the synoptic diagram that forms each processing procedure of the utility model display panels.
Embodiment
In instructions and claims, used some vocabulary to censure specific assembly.Having common knowledge the knowledgeable in the affiliated field should understand, and same assembly may be called with different nouns by manufacturer.This instructions and claim are not used as distinguishing the mode of assembly with the difference of title, but the benchmark that is used as distinguishing with the difference of assembly on function.Be an open term mentioned " comprising " in the middle of instructions and the claim in the whole text, so should be construed to " comprise but be not limited to ".In addition, " electric connection " speech is to comprise any indirect means that are electrically connected that directly reach at this.Therefore, be electrically connected at one second device, then represent this first device can be directly connected in this second device, or be connected to this second device through other devices or the intersegmental ground connection of connection hand if describe one first device in the literary composition.
Below the explanation of each embodiment be with reference to additional graphic, can be in order to illustration the utility model in order to the specific embodiment of enforcement.The direction term that the utility model is mentioned, for example " on ", D score, " preceding ", " back ", " left side ", " right side ", " top ", " end ", " level ", " vertically " etc., only be direction with reference to annexed drawings.Therefore, the direction term of use is in order to explanation and understands the utility model, but not in order to restriction the utility model.
Please refer to Fig. 2.Fig. 2 has the synoptic diagram of the LCD 10 of three grid type dot structures for the utility model one preferred embodiment.LCD 10 has grid electrode drive module 12, source drive module 14 and display panels 30.With resolution n * m is example, and the display panel 30 with three grid type dot structures has n * m pixel 20, m * 3 a sweep trace G
1, G
2..., G
3m, and n bar data line D
1, D
2..., D
n, and sweep trace and data line define 3 * m * n subpixels R, G, B, wherein sweep trace G
1, G
2..., G
3mBe to be electrically connected to grid electrode drive module 12, and data line D
1, D
2..., D
nBe to be electrically connected to source drive module 14.Each pixel 20 comprises three subpixels R, G, B.
Please refer to Fig. 3, Fig. 3 has illustrated the circuit diagram of the three grid type pixels of the utility model.As shown in Figure 3; Three grid type pixels 20 comprise that three sub-pixels (being respectively red sub-pixel 20R, green sub-pixels 20G and blue subpixels 20B), three thin film transistor (TFT) T1, T2, T3 are arranged at respectively in red sub-pixel 20R, green sub-pixels 20G and the blue subpixels 20B, and three pixel electrode 22A, 22B, 22C are arranged at respectively in red sub-pixel 20R, green sub-pixels 20G and the blue subpixels 20B.The grid of thin film transistor (TFT) T1, T2, T3 respectively with corresponding scanning line G
1, G
2, G
3Electrically connect, the source electrode of thin film transistor (TFT) T1, T2, T3 then all electrically connects with data line D1, and the drain electrode of each thin film transistor (TFT) T1, T2, T3 then electrically connects with pixel electrode 22A, 22B, 22C respectively.By above-mentioned configuration, the red sub-pixel 20R of three grid type dot structures 20, green sub-pixels 20G and blue subpixels 20B receive sweep trace G respectively
1, G
2, G
3Control, and receive same data line D
1In signal that different time points transmitted to show different GTGs with blue subpixels 20B respectively at red sub-pixel 20R, green sub-pixels 20G.In addition, sweep trace G
1, G
2, G
3Be to arrange along first direction, data line is to arrange along second direction, and first direction is perpendicular to second direction.Common electrode wire C
1Then cross sweep trace G
1, G
2, G
3And with sweep trace G
1, G
2, G
3Overlap, and common electrode wire C
1Overlap with pixel electrode 22A, 22B, 22C respectively and constitute three storage capacitors.
Please refer to Fig. 4, Fig. 4 is the top view of sub-pixel of the display panel of the utility model first embodiment.In following each embodiment, be to be example explanation the utility model, but the pixel 20 of the display panel 30 of the utility model is not as limit with display panels 30 with three grid type dot structures.As shown in Figure 4, the display panels 30 of present embodiment comprises glass substrate (also being called thin film transistor base plate) 32 and a plurality of pixels 20 that are arranged on the glass substrate 32.Each pixel 20 comprises three sub-pixel 20S, for example red sub-pixel, green sub-pixels and blue subpixels.For ease of explanation, Fig. 4 only illustrates the relative position of pixel electrode.Sub-pixel 20S is to be a rectangular region, and the major axis of rectangular region is to be provided with along first direction X, and short-axis direction then is provided with along second direction Y, and wherein first direction X and second direction Y are orthogonal haply.Sweep trace 40 is to be arranged on the glass substrate 32 and along first direction X to arrange, and 42 of data lines are to be arranged on the glass substrate 32 and along second direction Y to arrange.Sweep trace 40 is to be processed by the first metal layer.Thin film transistor (TFT) 44 is to be arranged at respectively in each sub-pixel 20S; And each thin film transistor (TFT) 44 comprises grid 44G, source electrode 44S and drain electrode 44D; Each grid 44G electrically connects with corresponding sweep trace 40; Each source electrode 44S electrically connects with data line 42, and the 44D that respectively drains then electrically connects with the pixel electrode 58 that is arranged in each sub-pixel 20S respectively.
See also Fig. 5 and Fig. 9, Fig. 5 is the synoptic diagram of pixel of the display panel of the utility model second embodiment, and Fig. 9 is the B-B ' line segment of Fig. 5 and the sectional view of C-C ' line segment.In the present embodiment; Insulation course (not shown) part of the end of first extension 4801 of common electrode wire 48 forms an opening (Via) 49; And on opening 49, form a conductive layer (for example tin indium oxide thing); Make common electrode wire 48 and bonding pad 57 electrically connect, wherein bonding pad 57 also is to be made up of the first metal layer.Therefore pairing two common electrode wire 48 of two pixel 20S that are positioned at same data line 42 both sides and are connected in sweep trace 40 are to electrically connect.In another embodiment, with the first shielded metal district 481 of two common electrode wire 48 of the sub-pixel 20 of delegation or the insulation course part of the end of secondary shielding metal area 482 also can form opening, form conductive layer afterwards again on this opening.Electrically connect with this conductive layer with two common electrode wire 48 of the sub-pixel 20 of delegation bonding pad 57 through this opening below.
In sum, the sweep trace 40 of the display panels of the utility model is to be processed by the first metal layer, and 48 of data line 42 and common electrode wire are processed by second metal level.Particularly for three grid type dot structures; Because sweep trace 40 is to be formed at different etch process by the different metal layer with common electrode wire 48; Can shorten between sweep trace 40 and the common electrode wire 48 not only apart from d2; A part also can suitably reduce as the width W 3 of the common electrode wire 48 in shielded metal district 481,482, therefore can improve pixel aperture ratio.
See also Fig. 6 to Figure 10 at this, Fig. 6 to Figure 10 is the synoptic diagram that forms each processing procedure of the utility model display panels.Figure 10 also is corresponding to the B-B ' line segment of Fig. 5 and the sectional view of C-C ' line segment.
See also Fig. 6; A glass substrate 32 at first is provided; Then carry out a deposit metal films processing procedure; Forming the first metal layer (not shown)s, and utilize one first mask to carry out first lithography, obtain the grid 44G and the bonding pad 57 of thin film transistor (TFT) 44 with etching in glass substrate 32 surface.
Then see also Fig. 7, then deposition is with silicon nitride (SiN
x) be the insulation course 52 cover gate 44G and the bonding pad 57 of material.The N+ amorphous silicon layer of successive sedimentation amorphous silicon on insulation course 52 (a-Si, Amorphous Si) layer and a high electron adulterated concentration.Utilize second mask to carry out second lithography to constitute semiconductor layer 44s.Semiconductor layer 44s comprises as the amorphous silicon layer 44a of thin film transistor (TFT) 44 passages and ohmic contact layer (the Ohmic contact layer) 44b that is used for reducing impedance.
See also Fig. 8; Then on insulation course 52, form comprehensive second metal level (not being illustrated among the figure) that covers, and utilize the 3rd mask to carry out source electrode 44S and drain electrode 44D, common electrode wire 48 and the data line 42 of the 3rd lithography to define thin film transistor (TFT) 44 respectively.Data line 42 is to be directly connected to source electrode 44S.Simultaneously, when the 3rd lithography, also can on insulation course 52, form opening 49.
See also Fig. 9; Then deposition is the protective seam (passivationlayer) 54 of material with the silicon nitride; And cover source electrode 44S, and drain electrode 44D and data line 42; Utilize the 4th mask to carry out the 4th lithography again, until drain electrode 44D surface, to form connecting hole (Via) 56 in drain electrode 44D top in order to remove the part protective seam 54 of drain electrode 44D top.
See also Figure 10.(Indium tin oxide ITO) is the transparency conducting layer of material, then utilizes one the 5th this transparency conducting layer of mask etching to form pixel electrode 58 with the tin indium oxide thing in formation on protective seam 54.The drain electrode 44D that pixel electrode 58 sees through preformed connecting hole 56 and thin film transistor (TFT) 44 electrically connects.Pixel electrode 58 can be formed on the opening 49 simultaneously, makes common electrode wire 48 and bonding pad 57 electrically connect.
In sum; Though the utility model discloses as above with preferred embodiment; But this preferred embodiment is not that the utility model person of ordinary skill in the field is in spirit that does not break away from the utility model and scope in order to restriction the utility model; All can do various changes and retouching, so the protection domain of the utility model is as the criterion with the scope that claim defines.
Claims (7)
1. display panels; It comprises the sweep trace that a plurality of pixels, multirow are parallel each other and court's one first direction extends and multiple row is parallel each other and the data line of court's one second direction extension, and said second direction is perpendicular to said first direction, and said fine scanning line is to process with a first metal layer; Be used for transmitting sweep signal; Said multi-column data line is to process with one second metal level, is used for transmission of data signals, and each pixel comprises a plurality of sub-pixels; It is characterized in that each sub-pixel comprises:
One pixel electrode is formed by a transparency conducting layer;
One thin film transistor (TFT), said thin film transistor (TFT) are to be connected with said pixel electrode, said sweep trace and said data line one to one; And
One common electrode line; Comprise a main Zhi Ganqu, one first shielded metal district and a secondary shielding metal area; Said first shielded metal district and said secondary shielding metal area are parallel to said fine scanning line and are connected in said main Zhi Ganqu, and said common electrode wire is made up of said second metal level.
2. display panels according to claim 1 is characterized in that, the main Zhi Ganqu of said common electrode wire is cross.
3. display panels according to claim 1 is characterized in that other comprises an insulation course, is arranged between said the first metal layer and said second metal level.
4. display panels according to claim 3 is characterized in that, is positioned at wherein data line both sides and is connected in wherein that pairing two common electrode wire of two sub-pixels of one scan line are to electrically connect.
5. display panels according to claim 4; It is characterized in that; Other comprise two run through said insulation course opening; Said transparency conducting layer is arranged on said two openings and the said the first metal layer, makes said two common electrode wire electrically connect through institute's transparency conducting layer and said the first metal layer.
6. display panels according to claim 5 is characterized in that, the said main Zhi Ganqu of said two common electrode wire electrically connects through institute's transparency conducting layer and said the first metal layer.
7. display panels according to claim 5; It is characterized in that the said first shielded metal district of said two common electrode wire or the said secondary shielding metal area of said two common electrode wire are to electrically connect through institute's transparency conducting layer and said the first metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203987623U CN202306078U (en) | 2011-10-19 | 2011-10-19 | LCD (liquid crystal display) panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203987623U CN202306078U (en) | 2011-10-19 | 2011-10-19 | LCD (liquid crystal display) panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202306078U true CN202306078U (en) | 2012-07-04 |
Family
ID=46374943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203987623U Withdrawn - After Issue CN202306078U (en) | 2011-10-19 | 2011-10-19 | LCD (liquid crystal display) panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202306078U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114428428A (en) * | 2022-03-01 | 2022-05-03 | 苏州华星光电技术有限公司 | Display panel and display device |
-
2011
- 2011-10-19 CN CN2011203987623U patent/CN202306078U/en not_active Withdrawn - After Issue
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114428428A (en) * | 2022-03-01 | 2022-05-03 | 苏州华星光电技术有限公司 | Display panel and display device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20120704 Effective date of abandoning: 20140122 |
|
| RGAV | Abandon patent right to avoid regrant |