CN202297858U - Crucible for improving uniformity of melt concentration - Google Patents
Crucible for improving uniformity of melt concentration Download PDFInfo
- Publication number
- CN202297858U CN202297858U CN 201120330101 CN201120330101U CN202297858U CN 202297858 U CN202297858 U CN 202297858U CN 201120330101 CN201120330101 CN 201120330101 CN 201120330101 U CN201120330101 U CN 201120330101U CN 202297858 U CN202297858 U CN 202297858U
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- Prior art keywords
- crucible
- melt
- main
- concentration
- uniformity
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- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The utility model discloses a crucible for improving uniformity of melt concentration, which comprises a main crucible for drawing single crystal, and also comprises a secondary crucible for supplying a replenisher to the main crucible, wherein the main crucible is communicated with the secondary crucible. The crucible for improving the uniformity of the melt concentration has the advantages that: the structure is simple, the application is flexible, the problem that the uniformity of monocrystalline silicon resistivity is affected by the non-uniformity of concentration of impurities in a melt in a single crystal growth process is effectively solved, and the uniformity of the melt concentration is improved, and thus the quality of monocrystalline silicon is improved.
Description
Technical field
The utility model relates to a kind of crucible, particularly a kind ofly can improve the inhomogeneity crucible of melt concentration.
Background technology
The silicon single crystal that is used for semiconducter device requires very high to its resistivity evenness.Silicon single crystal is in pulling process; The factor that influences its resistivity evenness is a lot; The first has added some and has improved the impurity of aspect performances such as silicon single crystal energy transformation ratio, specific conductivity in the polysilicon melt; For example boron, gallium, silit etc., whether Impurity Distribution evenly just has influence on the homogeneity of its resistivity in the silicon single crystal rod that be drawn into this moment.Impurity Distribution in the solid silicon rod directly with melt in Impurity Distribution relevant; And whether Impurity Distribution even in the melt, on the one hand with stir relevant, on the other hand with single crystal growth process in the fractional condensation process relevant; Along with constantly carrying out of crystal pulling process; Molten silicon in the crucible constantly reduces, and the distribution of impurity in melt simultaneously must receive the influence of deflegmation again, causes impurity constantly to increase or reduce with respect to the concentration of melt; Thereby make that the crystal bar that is drawn into is inhomogeneous to the Impurity Distribution of afterbody from the head, influence the silicon single crystal resistivity evenness.
The utility model content
The utility model purpose: to the problems referred to above, the purpose of the utility model provides and a kind ofly can improve the inhomogeneity crucible of impurity concentration in melt, to improve the silicon single crystal resistivity evenness.
Technical scheme: a kind of crucible of even melt concentration comprises the main crucible of pulling monocrystal also comprising the secondary crucible that supplement are provided to said main crucible that said secondary crucible is communicated with said main crucible.
It is outside that said secondary crucible is placed on said main crucible, offers the communicating aperture with said secondary crucible on the said main crucible.Because main crucible is a pulling monocrystal, thereby main crucible is arranged in the secondary crucible, does not influence pulling operation; The structure that is nested with simultaneously can improve whole crucible steadiness, prevent main crucible and secondary crucible to be communicated with the position insecure.
During single crystal growing, be the impurity of molten silicon and adding in the main crucible, and the supplement in the secondary crucible are confirmed according to segregation coefficient.For segregation coefficient less than for 1 the impurity; Because the impurity in the main crucible constantly gathers to the molten silicon of liquid state, along with the carrying out of crystal pulling, the molten silicon in the main crucible is no matter reduce simultaneously; Impurity concentration in winner's crucible is constantly raise; Thereby the supplement in the secondary crucible are molten silicon, flow into main crucible through communicating aperture, make the melt concentration in the main crucible keep even basically; For segregation coefficient greater than for 1 the impurity; Because the impurity in the main crucible constantly gathers to solid-state silicon single crystal rod, along with the carrying out of crystal pulling, the molten silicon in the main crucible is no matter reduce simultaneously; Impurity concentration in winner's crucible is constantly reduced; Thereby the supplement in the secondary crucible also will add this impurity except molten silicon, flow into main crucible through communicating aperture, make the melt concentration in the main crucible keep even basically.
Beneficial effect: compared with prior art; The utility model has the advantages that simple in structure; Be suitable for flexibly; Efficiently solve in the single crystal growth process owing to the even problem that influences the silicon single crystal resistivity evenness of impurity density unevenness in melt, improved the homogeneity of melt concentration, thereby improved the quality of silicon single crystal.
Description of drawings
Fig. 1 is the utility model front view;
Fig. 2 is the utility model sectional view.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment; Further illustrate the utility model; Should understand these embodiment only be used to the utility model is described and be not used in the restriction the utility model scope; After having read the utility model, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the utility model.
Like accompanying drawing 1, shown in 2, a kind of crucible of even melt concentration comprises the main crucible 1 of pulling monocrystal also comprising the secondary crucible 2 that supplement are provided to main crucible 1 that secondary crucible 2 is placed on main crucible 1 outside, and main crucible is offered the communicating aperture 3 with secondary crucible 2 on 1.
Claims (2)
1. the crucible of an even melt concentration comprises the main crucible (1) of pulling monocrystal, and it is characterized in that: also comprise the secondary crucible (2) that supplement are provided to said main crucible (1), said secondary crucible (2) is communicated with said main crucible (1).
2. the crucible of a kind of even melt concentration according to claim 1 is characterized in that: said secondary crucible (2) is placed on said main crucible (1) outside, offers the communicating aperture (3) with said secondary crucible (2) on the said main crucible (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120330101 CN202297858U (en) | 2011-09-05 | 2011-09-05 | Crucible for improving uniformity of melt concentration |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120330101 CN202297858U (en) | 2011-09-05 | 2011-09-05 | Crucible for improving uniformity of melt concentration |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202297858U true CN202297858U (en) | 2012-07-04 |
Family
ID=46366792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120330101 Expired - Fee Related CN202297858U (en) | 2011-09-05 | 2011-09-05 | Crucible for improving uniformity of melt concentration |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202297858U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102277615A (en) * | 2011-09-05 | 2011-12-14 | 镇江大成新能源有限公司 | Crucible capable of making melt concentration uniform |
-
2011
- 2011-09-05 CN CN 201120330101 patent/CN202297858U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102277615A (en) * | 2011-09-05 | 2011-12-14 | 镇江大成新能源有限公司 | Crucible capable of making melt concentration uniform |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 Termination date: 20140905 |
|
| EXPY | Termination of patent right or utility model |