CN202256731U - Optical element and system for homogenizing quality of semiconductor laser array beam - Google Patents

Abstract

The utility model provides an integrally-formed optical element for homogenizing the quality of semiconductor laser array beams and a system which is composed of the optical element and is used for homogenizing one-dimensional and two-dimensional close-packed and two-dimensional non-close-packed semiconductor laser array beams. The optical element comprises a plurality of integrally-laminated transparent optical material layers with equal thickness, and each layer is a flat right parallelepiped. One pair of parallel side faces of each layer are respectively an incident end face and an exit end face of semiconductor laser array beams, and the other pair of parallel side faces are parallel with the incident direction of the beams. The parallelogram bottom face of each layer coincides with the bottom face part of the adjacent layer. The formed angles of the beam incident end faces in all layers sequentially arranged along the laminated direction relative to the side face parallel with the incident direction of the beams are increased or decreased progressively, and the vertical distance between the incident end face and the exit end face in each layer or the distance along the incident direction of the beams is the same.

Description

The optical element and the system that are used for homogenize semiconductor laser array beam quality

Technical field

The utility model relates to a kind of optical element and optical system, specifically, relates to a kind of optical element and optical system that is used for homogenize semiconductor laser array beam quality.

Background technology

Semiconductor laser is because of electro-optical efficiency is high, volume is little and in light weight having obtained used widely.Therefore but single semiconductor laser can't be exported high power (greater than hectowatt), has occurred a plurality of semiconductor lasers are arranged in forming the bar battle array together and with the be stacked laser array of formation face battle array of a plurality of battle arrays.Receive restrictions such as technology, cooling, shaping methods, semiconductor laser array can not be done very longly, generally is about 10mm at present.The semiconductor laser that constitutes semiconductor laser array is generally edge-emission N-type semiconductor N laser instrument, and this semiconductor laser comprises a p-n junction, and current vertical is injected in this p-n junction, and laser then emits from the lateral edge of this p-n junction.Fig. 1 shows the synoptic diagram of existing one dimension semiconductor laser array.In an example of one dimension semiconductor laser array 1 shown in Figure 1, array length is about 10mm, and the bright dipping side of single luminous zone is of a size of 150 μ m * 1 μ m, and the spacing of adjacent luminous zone is 500 μ m.Because the section of the luminous zone of edge-emission N-type semiconductor N laser instrument is narrow; Thereby the light beam of its output (is called slow-axis direction in the direction that is parallel to p-n junction; Also be the directions X among Fig. 1) and the direction (being called quick shaft direction, also is the Y direction among Fig. 1) perpendicular to p-n junction on the different angles of divergence is arranged, be 50 ° to 60 ° in the angle of divergence of quick shaft direction; The angle of divergence at slow-axis direction is 5 ° to 10 °; And the light beam of its output is also different with diameter with the position with a tight waist on the slow-axis direction at quick shaft direction, have serious astigmatism, thereby the scioptics system focuses on simply.

The quality of laser beam quality is estimated through beam parameter product (BPP), and beam parameter product BPP is defined as the product of waist radius (R) and far-field divergence angle half-angle (θ) on certain direction, and unit is mmmrad.The beam parameter product BPP of the fast axle of above-mentioned semiconductor laser _fBe generally 1～2mmmrad, the beam parameter product BPP of slow axis _sBe 500mmmrad, the beam parameter product of fast and slow axis differs hundreds of times, thereby is difficult to this light beam is focused on.

For the quality of the output beam that improves semiconductor laser array, must carry out homogenize to it, to obtain the angle of divergence and all very little symmetrical hot spot of spot diameter.Beam homogenization is exactly the beam parameter product homogenising with the fast and slow axis of light beam; Promptly the bar shaped collimated light beam is divided into the N section on slow-axis direction through optical element; Then this N section is superposeed on quick shaft direction, like this, the beam parameter product on the slow-axis direction just is reduced to original 1/N; Beam parameter product on the fast axle then is increased to original N doubly, thereby the beam parameter product of the fast and slow axis of light beam is by homogenising.Fig. 2 is the synoptic diagram that the light beam of one dimension semiconductor laser array is carried out homogenize; Wherein, Top in Fig. 2 shows the homogenize optical system, and the bottom in Fig. 2 schematically shows the section configuration of the light beam at some the node places in the said homogenize optical system.As shown in Figure 2, at first, the laser beam that one dimension semiconductor laser array 1 sends collimates respectively to obtain quasi-parallel light through fast and slow axis collimation lens 2.The section configuration of light beam behind the collimation at Node B 1 place is strip, and the length of this strip is Len, and width is W.Then; Light beam behind the collimation passes through light beam cutter unit 4 along the Z axle; Become the N section light beam (for example light beam section a, b, c, d, e, the f among Fig. 2) of step-like distribution at Node B 2 places through the light beam behind the light beam cutter unit 4; The N section light beam of step-like distribution through light beam rearrangement unit 5, becomes the stack of said N section light beam again at Node B 3 places through the light beam behind the light beam rearrangement unit 5.The light beam at Node B 3 places is little in the size of slow-axis direction (being the directions X among Fig. 2), through 7 backs, slow axis beam-expanding collimation unit become at Node B 4 places the fast and slow axis beam parameter product by homogenising rectangular light spot.Final beam can be focused into uniform some hot spot through spherical surface focusing lens 8.

At present, the light beam cutter unit 4 that is used for homogenize semiconductor laser array beam quality generally is divided into reflection type optical element, refraction-reflection optical element and refraction type optical element with light beam rearrangement unit 5 optical elements such as grade.

Said reflective homogenize comprises two notch cuttype catoptrons of symmetry fully with optical element; Each notch cuttype catoptron comprises N high reflectance minute surface again; Light beam is divided into N cross-talk light beam after through first notch cuttype catoptron on slow-axis direction; After the reflection of each cross-talk light beam through the corresponding minute surface in second notch cuttype catoptron, align is got up on quick shaft direction.The shortcoming of the optical element that this homogenize is used is that the difficulty of processing of notch cuttype catoptron is big.

Said refraction-reflection homogenize utilizes refraction and the total reflection of two groups of prisms to realize cutting apart of light beam with optical element and resets.The shortcoming of the optical element that this homogenize is used is the bad control in accurate location between prism, and the assembling of prism is difficulty relatively.

Said refraction type homogenize then reflects the homogenize that realizes light beam through light beam is carried out one or many with optical element.This type of homogenize can be processed through grin lens array, microtrabeculae lens arra, prism combination, optical glass plate heap or the beam splitting refractor of banking up with optical element.This type of homogenize closely is formed by stacking a plurality of optical glass thin slices with optical element, and the efficiency ratio of homogenize is higher.But its defective is, along with the increase of the quantity of optical glass thin slice, the cumulative errors of optical glass thin slice is increasing, to such an extent as to exceed rational error range, makes the homogenize deleterious.In addition, also there are assembling difficulty, difficult problem of regulating.

The utility model content

The purpose of the utility model be to provide a kind of optical element that is used for homogenize semiconductor laser array beam quality and optical system with overcome above-mentioned location out of true, assembling difficulty, cumulative errors big, be difficult for the shortcoming of regulating.

To achieve these goals; On the one hand; The utility model provides a kind of optical element that is used for homogenize semiconductor laser array beam quality; This optical element comprises the transparent optical material layer that integrated N range upon range of thickness equates, N is a natural number, N >=2; Said each transparent optical material layer is flat cuboid; The side of the pair of parallel of this cuboid is respectively the incident end face and the outgoing end face of said semiconductor laser array light beam, and another of this cuboid is to the incident direction of parallel parallel sided in said semiconductor laser array light beam, and the parallelogram bottom surface of this cuboid overlaps with the bottom surface portions of adjacent transparent optical material layer; Wherein, Said light beam incident end face in tactic said each transparent optical material layer of said stacked direction is with respect to the said side angulation increasing or decreasing that is parallel to said semiconductor laser array light beam incident direction, said incident end face in said each transparent optical material layer and the vertical range between the outgoing end face or identical along the distance of said light beam incident direction.

Preferably, the said light beam incident end face in tactic said each transparent optical material layer of said stacked direction can constitute arithmetic progression with respect to the said side angulation that is parallel to said semiconductor laser array light beam incident direction.

On the other hand; The utility model also provides a kind of optical system that is used for homogenize one dimension semiconductor laser array beam quality; It comprises one dimension semiconductor laser array, fast and slow axis beam collimation unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optical coupled is sequentially got up; Wherein, Said light beam cutter unit is the optical element that above-mentioned one side the utility model is provided; Said light beam rearrangement unit is above-mentioned preferred optical element, and said light beam cutter unit is identical with the number of the said transparent optical material layer that said light beam rearrangement unit is comprised, and the stacked direction of the said transparent optical material layer in said light beam cutter unit and the said light beam rearrangement unit is vertical each other.

Again on the one hand. the utility model also provides a kind of optical system that is used for homogenize two dimension solid matter semiconductor laser array beam quality; It comprises two-dimentional solid matter semiconductor laser array, fast and slow axis beam collimation unit, fast axial light bundle compression unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optical coupled is sequentially got up; Wherein, Said light beam cutter unit is the optical element that above-mentioned one side the utility model is provided; Said light beam rearrangement unit is above-mentioned preferred optical element; Said light beam cutter unit is identical with the number of the said transparent optical material layer that said light beam rearrangement unit is comprised, and the stacked direction of the said transparent optical material layer in said light beam cutter unit and the said light beam rearrangement unit is vertical each other.

Preferably, in above-mentioned optical system, can get

BPP _sBe the beam parameter product of the slow-axis direction of said semiconductor laser array, BPP _fBe the beam parameter product of the quick shaft direction of said semiconductor laser array, [] is for rounding symbol; Thickness d on the stacked direction of the said transparent optical material layer of said light beam cutter unit ₁Can be the length L en of the strip light spots on the said light beam incident end face that incides said light beam cutter unit, the thickness d on the stacked direction of the said transparent optical material layer of said light beam rearrangement unit ₂Can be d ₂=| μ (n ₁) L ₁Δ α ₁(N-1) |+W, wherein, L ₁For the light beam incident end face of each transparent optical material layer on the said light beam cutter unit and the vertical range between the light beam outgoing end face or along the distance of light beam incident direction, Δ α ₁Be poor with respect to the side angulation that is parallel to the light incident direction of the light beam incident end face in the adjacent two layers of said light beam cutter unit, W is the width of said strip light spots, μ (n ₁) be that (α, n) angle α asks behind the partial derivative angle α to average the function mu (n) of gained at n=n to function k again ₁The time value, and

$k(\mathrm{\α},n)=\frac{\cos (\mathrm{\α}+\arcsin \frac{n_0\·\cos \mathrm{\α}}{n})}{\cos \left(\arcsin \frac{n_0\·\cos \mathrm{\α}}{n}\right)}$

n ₁Be the refractive index of the transparent optical material that forms said light beam cutter unit, n ₀It is the refractive index of air; Light beam incident end face in the adjacent two layers on the said light beam rearrangement unit is with respect to the difference Δ α of the side angulation that is parallel to the light incident direction ₂Can for:

$\mathrm{\&Delta;}{\mathrm{\&alpha;}}_2=\frac{\mathrm{Len}}{N\&CenterDot;\left|\mathrm{\&mu;}\left(n_2\right)\right|\&CenterDot;{\mathrm{<figure-callout\; id="2"\; label="L"\; filenames="HDA0000089334280000051.png,HDA0000089334280000061.png"\; state="\{\{state\}\}">L</figure-callout>}}_2}$

Wherein, μ (n ₂) be that function mu (n) is at n=n ₂The time value, n ₂Be the refractive index of the transparent optical material that forms said light beam rearrangement unit, L ₂For the light beam incident end face of each layer transparent optical material in the said light beam rearrangement unit and the vertical range between the light beam outgoing end face or along the distance of light beam incident direction.

Further preferably, can pass through W=| μ (n ₁) L ₁Δ α ₁| confirm Δ α ₁

At last; The utility model also provides a kind of optical system that is used for the non-solid matter semiconductor laser array beam quality of homogenize two dimension; It comprises two-dimentional non-solid matter semiconductor laser array, fast and slow axis beam collimation unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optical coupled is sequentially got up; Wherein, Said light beam cutter unit is the optical element that above-mentioned one side the utility model is provided; Said light beam rearrangement unit comprises the above-mentioned preferred optical element that the said stacked direction in a plurality of edges is arranged; Each optical element in a plurality of said optical element that said light beam rearrangement unit is comprised and said light beam cutter unit have the same number of said transparent optical material layer, and the stacked direction of the said transparent optical material layer in said light beam cutter unit and the said light beam rearrangement unit is vertical each other.

As stated; The described optical element of homogenize semiconductor laser array beam quality and the homogenize purpose that optical system can realize the semiconductor laser array beam quality of being used for of the utility model; And said optical element have the location accurately, compact conformation, integrated molding, no cumulative errors, the advantage of regulating easily; Above-mentioned optical element and Design for optical system, manufacturing and use have been made things convenient for widely; And can reduce the loss of luminous power, and improve homogenize efficient, be particularly suitable for the beam homogenization of large power semiconductor laser array.

Description of drawings

Fig. 1 is a perspective diagram, shows existing one dimension semiconductor laser array;

Fig. 2 is a schematic diagram, shows the principle of the beam quality homogenize of one dimension semiconductor laser array, and wherein, this figure top shows the homogenize optical system, and this figure bottom shows the section configuration of the light beam at some the node places in this homogenize optical system;

Fig. 3 is a skeleton view, shows that the embodiment of the utility model is described to be used for the optical element that the semiconductor laser array light beam is cut apart;

Fig. 4 is a planimetric map, shows the projection along the stacked direction of transparent optical material layer of optical element among Fig. 3;

Fig. 5 is a planimetric map, shows twice refraction of the light in tactic the 1st layer of transparent optical material of the stacked direction along the transparent optical material layer of the optical element among Fig. 3;

Fig. 6 is a planimetric map, shows twice refraction of the light in tactic the 6th layer of transparent optical material of the stacked direction along the transparent optical material layer of the optical element among Fig. 3;

Fig. 7 is that (α is n) with the variation relation figure of angle [alpha] for function k;

Fig. 8 is a skeleton view, shows the described optical element that is used for the semiconductor laser array light beam rearrangement of an embodiment of the utility model;

Fig. 9 is the light path synoptic diagram, shows the described optical system that is used for homogenize one dimension semiconductor laser array beam quality of first embodiment of the utility model;

Figure 10 is the light path synoptic diagram, shows the described optical system that is used for homogenize two dimension solid matter semiconductor laser array beam quality of second embodiment of the utility model; And

Figure 11 is the light path synoptic diagram, shows the described optical system that is used for the non-solid matter semiconductor laser array beam quality of homogenize two dimension of the 3rd embodiment of the utility model.

Embodiment

Below with reference to accompanying drawing the described optical element of homogenize semiconductor laser array beam quality and the embodiment of optical system of being used for of the utility model described.Those of ordinary skill in the art can recognize, under the situation of spirit that does not depart from the utility model and scope, can revise described embodiment with various mode or its combination.Therefore, accompanying drawing is illustrative with being described in essence, rather than is used to limit the protection domain of claim.In addition, in this manual, accompanying drawing is not in scale to be drawn, and identical Reference numeral is represented identical part.

Fig. 3 is a skeleton view, shows the optical element that the described light beam that is used for semiconductor laser array of an embodiment of the utility model is cut apart, and Fig. 4 is a planimetric map, shows the projection along the stacked direction of transparent optical material layer of optical element among Fig. 3.Like Fig. 3 and shown in Figure 4; The described optical element 40 that is used for homogenize semiconductor laser array beam quality of an embodiment of the utility model comprises that integrated range upon range of N (is described for convenient here; Get N=6; In fact, N can be for more than or equal to 2 natural number) the transparent optical material layer P11-P16 that equate of thickness, each transparent optical material layer is flat cuboid (being that the bottom surface is that parallelogram and lateral vertical are in the quadrangular of bottom surface).Said transparent optical material comprises for example clear optical glass, transparent resin etc., and its refractive index is n ₁, the refractive index of air is n ₀The side 45 and 46 of the pair of parallel of each cuboid P11-P16 is respectively the incident end face and the outgoing end face of said semiconductor laser array light beam; Another is parallel to the incident direction of said semiconductor laser array light beam to parallel side 41 and 42, and pair of parallel quadrilateral bottom surface 43 and 44 overlaps with the bottom surface portions of adjacent transparent optical material layer.In Fig. 3 and Fig. 4; 6 solid dot S1-S6 show six hot spots that on incident end face 45, form when six light that incident direction is parallel to side 41 and side 42 incide each transparent optical material layer P11-P16; These six hot spots are in respectively in the incident end face 45 of 6 range upon range of layers of optical element 40, and said six pairing light of hot spot are propagated in the layer at place separately respectively, refraction.If the position on the picture plane is dropped on the right side among Fig. 3 and Fig. 4 as 6 hollow dots S1 ' on the plane-S6 ' said each self-corresponding light of six hot spot S1-S6 of expression along straight ahead, and the right side is as 6 solid dot S1 on the plane "-S6 " then show said each self-corresponding light of six hot spot S1-S6 and drop on the physical location on the picture plane through twice refraction belonging to the transparent optical material layer separately.In addition; As shown in the figure; To P16, the light beam incident end face 45 of each transparent optical material layer increases progressively with respect to side 42 angulations (that is the angle of being rotated when, the plane at 42 places turns to plane, light beam incident end face 45 place by counter clockwise direction from the side) from transparent optical material layer P11; In addition, the vertical range between the light beam incident end face 45 of each transparent optical material layer and the light beam outgoing end face 46 or identical along the distance of said light beam incident direction.Obviously, to P16, the light beam incident end face 45 of each transparent optical material layer also can successively decrease with respect to side 42 angulations from transparent optical material layer P11, does not so also influence the enforcement of the utility model.Preferably, to P16, the side 45 of each transparent optical material layer becomes the increasing or decreasing arithmetic progression with respect to side 42 angulations from transparent optical material layer P11.

Fig. 5 and Fig. 6 are planimetric maps, show twice refraction of the light in the stacked direction along the transparent optical material layer of the optical element 40 among Fig. 3 tactic the 1st layer and the 6th layer of transparent optical material respectively.

As shown in Figure 5, light beam incident end face 45 and the light beam outgoing end face 46 of said the 1st layer of transparent optical material P11 are parallel to each other, and the vertical range between light beam incident end face 45 and the light beam outgoing end face 46 is L ₁Light beam incident end face 45 is α with respect to the side that is parallel to the light incident direction 42 angulations ₁₁Incide the pairing light of some S1 on the incident end face 45 of this transparent optical material layer in this layer through the some S1 of twice refraction from the outgoing end face 46 of this layer " outgoing.

As shown in Figure 6, light beam incident end face 45 and the light beam outgoing end face 46 of said the 6th layer of transparent optical material P16 are parallel to each other, and the vertical range between light beam incident end face 45 and the light beam outgoing end face 46 is L ₁Light beam incident end face 45 is α with respect to the side that is parallel to the light incident direction 42 angulations ₁₆Incide the pairing light of some S6 on the incident end face 45 of this transparent optical material layer in this layer through the some S6 of twice refraction from the outgoing end face 46 of this layer " outgoing.

According to the refraction law of light, be easy to calculate, in Fig. 5 and Fig. 6, after twice refraction, the outgoing beam in the i layer transparent optical material layer is with respect to the side-play amount D of incident beam _1i=k (α _1i, n ₁) L ₁, wherein, i=1,6, α _1iBe light beam incident end face 45 in the i layer transparent optical material layer with respect to the side that is parallel to the light incident direction 42 angulations, and k (α _1i, n ₁) be function

$k(\mathrm{\&alpha;},n)=\frac{\cos (\mathrm{\&alpha;}+\arcsin \frac{n_0\&CenterDot;\cos \mathrm{\&alpha;}}{n})}{\cos \left(\arcsin \frac{n_0\&CenterDot;\cos \mathrm{\&alpha;}}{n}\right)}$

At α=α _1i, n=n ₁The time value.

Fig. 7 be function k (α, n) with the variation relation figure of angle [alpha], wherein solid dot show function k (α, n) with the variation relation of angle [alpha], in calculating, the refractive index n of transparent optical material ₁Get 1.5.Can see from Fig. 7, k (α, n)=-k (π-α, n), and this variation relation in 45 ° to 135 ° scope very near linear relationship.Therefore Δ D is arranged _1i≈ μ (n ₁) L ₁Δ α _1i, wherein, Δ α _1iBe poor with respect to the side that is parallel to the light incident direction 42 angulations of the light beam incident end face 45 in the adjacent two layers at the i layer place in the optical element 40, Δ D _1iBe poor with respect to the side-play amount of incident beam of the outgoing beam in the adjacent two layers at the i layer place in the optical element 40; μ (n ₁) can be taken as, for example, (α, n) angle α asks behind the partial derivative angle α to average the function mu (n) of gained at n=n to k again ₁The time value.If to all i, Δ α is arranged all _1i=Δ α ₁(being the said angle formation arithmetic progression in each transparent optical material layer) then has Δ D ₁≈ μ (n ₁) L ₁Δ α ₁, wherein, Δ α ₁Be poor with respect to the side that is parallel to the light incident direction 42 angulations of the light beam incident end face 45 in the adjacent two layers in the optical element 40, Δ D ₁Be poor with respect to the side-play amount of incident beam of the outgoing beam in the adjacent two layers in the optical element 40.In addition; Angle [alpha] is at 45 ° within 135 ° the time; Very approaching between incident end face 45 and the outgoing end face 46 along the distance of light beam incident direction and the vertical range between them, therefore, when design optical element 40; If angle [alpha] is selected between 45 ° to 135 °, can use between incident end face 45 and the outgoing end face 46 distance along the light beam incident direction so as the L in the above-mentioned formula ₁Thereby, simplified and measured and make.

Referring to formula D _1i=k (α _1i, n ₁) L ₁And Fig. 5-Fig. 7, can use two offset directions of outgoing beam with respect to the symbolic representation light beam of the algebraic value of the side-play amount of incident beam.For example, work as α _1iIn the time of＜90 °, D _1i＞0, the downward deviation of light beam, and along with α _LiIncrease, this deviation reduces linearly; And work as α _LiIn the time of＞90 °, D _1i＜0, the light beam deviation that makes progress, and along with α _LiIncrease, this deviation increases linearly.

Should note; Can easily see through top description referring to figs. 3 to Fig. 6; At first, said each transparent optical material layer can not influence the side-play amount of outgoing beam with respect to incident beam along the translation of said light beam incident direction, in addition; When the side 41 that is parallel to said transparent optical material layer and bottom surface 43 are incided light beam on the incident end face 45 along the incident end face translation, correspondingly do equidirectional from the light beam of outgoing end face 46 outgoing with the amplitude translation.Like this, just the integrated design for optical element 40 provides very big dirigibility with making, and needs the local less of departure during fabrication.

Referring to Fig. 3 and Fig. 4, when the collimated light beam that uses 40 pairs of one dimension semiconductor laser arrays of optical element is cut apart, at first according to the beam parameter product BPP of the slow-axis direction of this semiconductor laser array _sBeam parameter product BPP with the quick shaft direction of this semiconductor laser array _fConfirm the number of plies of optical element 40

Wherein, [] is for rounding symbol.Then, according to the length L en of the strip light spots on the incident end face that incides optical element 40 45, confirm the thickness d of optical element 40 on said stacked direction ₁=Len.Be used for light beam incident end face 45 that the i layer (i=1 is to N-1) on the optical element 40 of light beam cutting locates adjacent layer with respect to the side that is parallel to the light incident direction 42 angulation α _1iDifference Δ α _1iCan confirm according to the thickness W of said strip light spots.Specifically, if light beam is cut into appearance shown in Figure 2, then pass through

Confirm Δ α _1iApprox, can pass through W=| μ (n ₁) L ₁Δ α _1i| confirm Δ α _1i, Δ α is arranged this moment _1i=Δ α ₁, promptly the said angle in each transparent optical material layer constitutes arithmetic progression, Δ α ₁Be poor with respect to the side that is parallel to the light incident direction 42 angulations of the light beam incident end face 45 in the adjacent layer on the optical element 40 of light beam cutting.Should be noted that Δ α ₁Can also select through Else Rule, for example W＜| μ (n ₁) L ₁Δ α _Li|.

After the collimated light beam of said one dimension semiconductor laser array is cut apart, utilize optical element shown in Figure 8 that light beam after cutting apart is reset again.Fig. 8 is a skeleton view, shows the described optical element that is used for the semiconductor laser array light beam rearrangement of an embodiment of the utility model.Optical element 50 shown in Figure 8 is identical (but structural parameters can be different) with the structure of optical element 40 shown in Figure 3.When the light beam of having cut apart at the quilt that uses 50 pairs of one dimension semiconductor laser arrays of optical element was reset, each the folded layer by layer direction that makes optical element 50 clockwise rotated 90 ° with respect to each folded layer by layer direction of optical element 40 in the plane perpendicular to the light incident direction.Optical element 50 has been divided into the N layer equally,

[] is for rounding symbol, the thickness d of optical element 50 ₂Can confirm by following formula:

${\mathrm{<figure-callout\; id="2"\; label="d"\; filenames="HDA0000089334280000051.png,HDA0000089334280000061.png"\; state="\{\{state\}\}">d</figure-callout>}}_2=|\underset{i=1}{\overset{N-1}{\mathrm{\&Sigma;}}}\&PartialD;k(\mathrm{\&alpha;},n)/\&PartialD;\mathrm{\&alpha;}{|}_{\mathrm{\&alpha;}={\mathrm{\&alpha;}}_{1i},n={\mathrm{<figure-callout\; id="1"\; label="n"\; filenames="HDA0000089334280000011.png,HDA0000089334280000022.png"\; state="\{\{state\}\}">n</figure-callout>}}_1}\&CenterDot;\mathrm{\&Delta;}{\mathrm{\&alpha;}}_{1i}\&CenterDot;{\mathrm{<figure-callout\; id="1"\; label="L"\; filenames="HDA0000089334280000011.png,HDA0000089334280000022.png"\; state="\{\{state\}\}">L</figure-callout>}}_1|+W$

Constitute arithmetic progression if be used for the light beam incident end face 45 of each transparent optical material layer of the optical element 40 of light beam cutting with respect to the side that is parallel to the light incident direction 42 angulations, so d can be arranged approx ₂=| μ (n ₁) L ₁Δ α ₁(N-1) |+W.

Light beam incident end face 45 in the adjacent layer on the optical element 50 is constant Δ α with respect to the difference of the side that is parallel to the light incident direction 42 angulations ₂, the beam alignment that can guarantee like this to cut is arranged.Δ α ₂Can confirm approx by following formula:

$\mathrm{\&Delta;}{\mathrm{\&alpha;}}_2=\frac{\mathrm{Len}}{N\&CenterDot;\left|\mathrm{\&mu;}\left(n_2\right)\right|\&CenterDot;{\mathrm{<figure-callout\; id="2"\; label="L"\; filenames="HDA0000089334280000051.png,HDA0000089334280000061.png"\; state="\{\{state\}\}">L</figure-callout>}}_2}$

Wherein, L ₂For the light beam incident end face 45 of each layer transparent optical material in the optical element 50 and the vertical range between the light beam outgoing end face 46 or along the distance of light beam incident direction, n ₂Refractive index for the transparent optical material that forms optical element 50.

Below with reference to Fig. 9, Figure 10 and Figure 11 described three embodiment that are used for the optical system of homogenize semiconductor laser array beam quality of the utility model are described.Fig. 9 is the light path synoptic diagram; Show the described optical system that is used for homogenize one dimension semiconductor laser array beam quality of first embodiment of the utility model; Wherein, Fig. 9 top shows the side view of this system, and Fig. 9 middle part shows the vertical view of this system, and Fig. 9 bottom shows the section configuration of the light beam at Node B 1, B2, B3 and B4 place in this system.Figure 10 is the light path synoptic diagram; Show the described optical system that is used for homogenize two dimension solid matter semiconductor laser array beam quality of second embodiment of the utility model; Wherein, Figure 10 top shows the side view of this system, and Figure 10 middle part shows the vertical view of this system, and Figure 10 bottom shows the section configuration of the light beam at Node B 1, B2, B3 and B4 place in this system.Figure 11 is the light path synoptic diagram; Show the described optical system that is used for the non-solid matter semiconductor laser array beam quality of homogenize two dimension of the 3rd embodiment of the utility model; Wherein, Figure 10 top shows the side view of this system, and Figure 10 middle part shows the vertical view of this system, and Figure 10 bottom shows the section configuration of the light beam at Node B 1, B2, B3 and B4 place in this system.

The light beam cutter unit 4 that as shown in Figure 9, the optical system of the described one dimension semiconductor laser array of first embodiment beam homogenization of the utility model comprises one dimension semiconductor laser array 1 that optical coupled sequentially gets up, fast and slow axis beam collimation unit 2, be made up of optical element 40, the light beam rearrangement unit 5 and the slow axis beam-expanding collimation unit 7 that constitute by optical element 50.Light beam cutter unit 4 is identical with the number of the said layer that light beam rearrangement unit 5 is had.The folded layer by layer direction of each of optical element 50 clockwise rotates 90 ° with respect to each folded layer by layer direction of optical element 40 in the plane perpendicular to the light incident direction.Optical element 40 is selected according to the description of front with respect to the difference of the side angulation that is parallel to the light incident direction with each light beam incident end face of folding layer by layer in thickness, the number of plies and the adjacent layer on direction of optical element 50.Much more no longer the principle of work of optical system shown in Figure 9 is similar to optical system shown in Figure 2, to do description here.

The light beam cutter unit 4 that shown in figure 10, the optical system of the described two-dimentional solid matter semiconductor laser array beam homogenization of second embodiment of the utility model comprises two-dimentional solid matter semiconductor laser array 1 ' that optical coupled sequentially gets up, fast and slow axis beam collimation unit 2, fast axial light bundle compression unit 3, be made up of optical element 40, the light beam rearrangement unit 5 and the slow axis beam-expanding collimation unit 7 that constitute by optical element 50.Spacing between the adjacent two row laser instruments in the two dimension solid matter semiconductor laser array 1 ' is general international standard spacing 1.8mm.Light beam cutter unit 4 is identical with the number of the said layer that light beam rearrangement unit 5 marks off.The folded layer by layer direction of each of optical element 50 clockwise rotates 90 ° with respect to each folded layer by layer direction of optical element 40 in the plane perpendicular to the light incident direction.Optical element 40 is selected according to the description of front with respect to the difference of the side angulation that is parallel to the light incident direction with each light beam incident end face of folding layer by layer in thickness, the number of plies and the adjacent layer on direction of optical element 50.Much more no longer the principle of work of optical system shown in Figure 10 is similar to optical system shown in Figure 2, to do description here.

Shown in figure 11, the optical system of the non-solid matter semiconductor laser array of the described two dimension of the 3rd embodiment beam homogenization of the utility model comprises the one dimension semiconductor laser array 1 that optical coupled is sequentially got up ", fast and slow axis beam collimation unit 2, the light beam cutter unit 4 that constitutes by optical element 40, by a plurality of along light beam rearrangement unit 5 and slow axis beam-expanding collimation unit 7 that the range upon range of optical element 50 of stacked direction constitutes.The non-solid matter semiconductor laser array 1 of two dimension " in the spacing of adjacent two row between the laser instruments be 2mm-10mm.Light beam cutter unit 4 is identical with the number of the said layer that each optical element 50 that light beam rearrangement unit 5 is comprised marks off.Each folded layer by layer direction of folded layer by layer direction of each of optical element 50 and optical element 40 clockwise rotates 90 ° in the plane perpendicular to the light incident direction.Optical element 40 is selected according to the description of front with respect to the difference of the side angulation that is parallel to the light incident direction with each light beam incident end face of folding layer by layer in thickness, the number of plies and the adjacent layer on direction of optical element 50.Much more no longer the principle of work of optical system shown in Figure 11 is similar to the simple superposition of optical system shown in Figure 9, to do description here.

The optical system of the semiconductor laser array beam shaping that Fig. 9 is extremely shown in Figure 11 also can comprise the spherical surface focusing lens 8 that are used for the uniform light spots of slow axis beam-expanding collimation unit 7 outputs is focused into a hot spot.

As stated; The described optical element of homogenize semiconductor laser array beam quality and the homogenize purpose that optical system can realize the semiconductor laser array light beam of being used for of the utility model; And said optical element have the location accurately, compact conformation, integrated molding, no cumulative errors, the advantage of regulating easily; Above-mentioned optical element and Design for optical system, manufacturing and use have been made things convenient for widely; And can reduce the loss of luminous power, and improve homogenize efficient, be particularly suitable for the beam homogenization of large power semiconductor laser array.

As above with the mode of example described optical element and the optical system that is used for homogenize semiconductor laser array beam quality of the utility model described with reference to accompanying drawing.But, it will be appreciated by those skilled in the art that for described optical element and the optical system that is used for homogenize semiconductor laser array beam quality of above-mentioned the utility model, can also on the basis that does not break away from the utility model content, make various improvement.Therefore, the protection domain of the utility model should be confirmed by the content of appending claims.

Claims (7)

1. optical element that is used for homogenize semiconductor laser array beam quality; It is characterized in that; This optical element comprises the transparent optical material layer that integrated N range upon range of thickness equates, N is a natural number, N >=2; Said each transparent optical material layer is flat cuboid; The side of the pair of parallel of this cuboid is respectively the incident end face and the outgoing end face of said semiconductor laser array light beam, and another of this cuboid is to the incident direction of parallel parallel sided in said semiconductor laser array light beam, and the parallelogram bottom surface of this cuboid overlaps with the bottom surface portions of adjacent transparent optical material layer; Wherein, Said light beam incident end face in tactic said each transparent optical material layer of said stacked direction is with respect to the said side angulation increasing or decreasing that is parallel to said semiconductor laser array light beam incident direction, said incident end face in said each transparent optical material layer and the vertical range between the outgoing end face or identical along the distance of said light beam incident direction.

2. the optical element that is used for homogenize semiconductor laser array beam quality according to claim 1; It is characterized in that the said light beam incident end face in tactic said each transparent optical material layer of said stacked direction constitutes arithmetic progression with respect to the said side angulation that is parallel to said semiconductor laser array light beam incident direction.

3. optical system that is used for homogenize one dimension semiconductor laser array beam quality; Comprise one dimension semiconductor laser array, fast and slow axis beam collimation unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optical coupled is sequentially got up; It is characterized in that; Said light beam cutter unit is the described optical element of claim 1; Said light beam rearrangement unit is the described optical element of claim 2; Said light beam cutter unit is identical with the number of the said transparent optical material layer that said light beam rearrangement unit is comprised, and the stacked direction of the said transparent optical material layer in said light beam cutter unit and the said light beam rearrangement unit is vertical each other.

4. optical system that is used for homogenize two dimension solid matter semiconductor laser array beam quality; Comprise two-dimentional solid matter semiconductor laser array, fast and slow axis beam collimation unit, fast axial light bundle compression unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optical coupled is sequentially got up; It is characterized in that; Said light beam cutter unit is the described optical element of claim 1; Said light beam rearrangement unit is the described optical element of claim 2; Said light beam cutter unit is identical with the number of the said transparent optical material layer that said light beam rearrangement unit is comprised, and the stacked direction of the said transparent optical material layer in said light beam cutter unit and the said light beam rearrangement unit is vertical each other.

5. according to claim 3 or 4 described optical systems, it is characterized in that, BPP _sBe the beam parameter product of the slow-axis direction of said semiconductor laser array, BPP _fBe the beam parameter product of the quick shaft direction of said semiconductor laser array, [] is for rounding symbol;

Thickness d on the stacked direction of the said transparent optical material layer of said light beam cutter unit ₁Be the length L en of the strip light spots on the said light beam incident end face that incides said light beam cutter unit, the thickness d on the stacked direction of the said transparent optical material layer of said light beam rearrangement unit ₂Be d ₂=| μ (n ₁) L ₁Δ α ₁(N-1) |+W, wherein, L ₁For the light beam incident end face of each transparent optical material layer on the said light beam cutter unit and the vertical range between the light beam outgoing end face or along the distance of light beam incident direction, Δ α ₁Be poor with respect to the side angulation that is parallel to the light incident direction of the light beam incident end face in the adjacent two layers of said light beam cutter unit, W is the width of said strip light spots, μ (n ₁) be that (α, n) angle α asks behind the partial derivative angle α to average the function mu (n) of gained at n=n to function k again ₁The time value, and

$k(\mathrm{\&alpha;},n)=\frac{\cos (\mathrm{\&alpha;}+\arcsin \frac{n_0\&CenterDot;\cos \mathrm{\&alpha;}}{n})}{\cos \left(\arcsin \frac{n_0\&CenterDot;\cos \mathrm{\&alpha;}}{n}\right)}$

n ₁Be the refractive index of the transparent optical material that forms said light beam cutter unit, n ₀It is the refractive index of air;

Light beam incident end face in the adjacent two layers on the said light beam rearrangement unit is with respect to the difference Δ α of the side angulation that is parallel to the light incident direction ₂For:

$\mathrm{\&Delta;}{\mathrm{\&alpha;}}_2=\frac{\mathrm{Len}}{N\&CenterDot;\left|\mathrm{\&mu;}\left(n_2\right)\right|\&CenterDot;L_2}$

Wherein, μ (n ₂) be that function mu (n) is at n=n ₂The time value, n ₂Be the refractive index of the transparent optical material that forms said light beam rearrangement unit, L ₂For the light beam incident end face of each layer transparent optical material in the said light beam rearrangement unit and the vertical range between the light beam outgoing end face or along the distance of light beam incident direction.

6. optical system according to claim 5 is characterized in that, through W=| μ (n ₁) L ₁Δ α ₁| confirm Δ α ₁

7. optical system that is used for the non-solid matter semiconductor laser array beam quality of homogenize two dimension; Comprise two-dimentional non-solid matter semiconductor laser array, fast and slow axis beam collimation unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optical coupled is sequentially got up; It is characterized in that; Said light beam cutter unit is the described optical element of claim 1; Said light beam rearrangement unit comprises the optical element as claimed in claim 2 that the said stacked direction in a plurality of edges is arranged; Each optical element in a plurality of said optical element that said light beam rearrangement unit is comprised and said light beam cutter unit have the same number of said transparent optical material layer, and the stacked direction of the said transparent optical material layer in said light beam cutter unit and the said light beam rearrangement unit is vertical each other.

Images