CN202246974U - 带有局部冷却装置的多晶硅热场 - Google Patents
带有局部冷却装置的多晶硅热场 Download PDFInfo
- Publication number
- CN202246974U CN202246974U CN2011203212899U CN201120321289U CN202246974U CN 202246974 U CN202246974 U CN 202246974U CN 2011203212899 U CN2011203212899 U CN 2011203212899U CN 201120321289 U CN201120321289 U CN 201120321289U CN 202246974 U CN202246974 U CN 202246974U
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- thermal field
- polysilicon
- crystal
- refrigerating unit
- water cooler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 27
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 22
- 238000001816 cooling Methods 0.000 title abstract description 10
- 238000011534 incubation Methods 0.000 claims description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 239000010439 graphite Substances 0.000 claims description 19
- 229910002804 graphite Inorganic materials 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 8
- 239000007921 spray Substances 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 41
- 238000005266 casting Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 238000002844 melting Methods 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 3
- 238000002425 crystallisation Methods 0.000 abstract description 2
- 230000008025 crystallization Effects 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 238000009826 distribution Methods 0.000 abstract description 2
- 239000002210 silicon-based material Substances 0.000 abstract description 2
- 238000005345 coagulation Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 238000010309 melting process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 241000209456 Plumbago Species 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000003351 stiffener Substances 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011203212899U CN202246974U (zh) | 2011-08-30 | 2011-08-30 | 带有局部冷却装置的多晶硅热场 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011203212899U CN202246974U (zh) | 2011-08-30 | 2011-08-30 | 带有局部冷却装置的多晶硅热场 |
Publications (1)
Publication Number | Publication Date |
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CN202246974U true CN202246974U (zh) | 2012-05-30 |
Family
ID=46108244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2011203212899U Expired - Lifetime CN202246974U (zh) | 2011-08-30 | 2011-08-30 | 带有局部冷却装置的多晶硅热场 |
Country Status (1)
Country | Link |
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CN (1) | CN202246974U (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103789829A (zh) * | 2014-02-11 | 2014-05-14 | 英利能源(中国)有限公司 | 硅锭底部晶粒均匀成核的方法 |
CN104726933A (zh) * | 2013-12-20 | 2015-06-24 | 昆山中辰矽晶有限公司 | 用于晶碇铸造炉的冷却装置及铸造晶碇的方法 |
-
2011
- 2011-08-30 CN CN2011203212899U patent/CN202246974U/zh not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104726933A (zh) * | 2013-12-20 | 2015-06-24 | 昆山中辰矽晶有限公司 | 用于晶碇铸造炉的冷却装置及铸造晶碇的方法 |
CN104726933B (zh) * | 2013-12-20 | 2017-06-20 | 昆山中辰矽晶有限公司 | 用于晶碇铸造炉的冷却装置及铸造晶碇的方法 |
CN103789829A (zh) * | 2014-02-11 | 2014-05-14 | 英利能源(中国)有限公司 | 硅锭底部晶粒均匀成核的方法 |
CN103789829B (zh) * | 2014-02-11 | 2016-03-02 | 英利能源(中国)有限公司 | 硅锭底部晶粒均匀成核的方法 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CX01 | Expiry of patent term |
Granted publication date: 20120530 |
|
CX01 | Expiry of patent term |