CN202231659U - Toy lockset direct-current motor driving integrated circuit with temperature protection - Google Patents
Toy lockset direct-current motor driving integrated circuit with temperature protection Download PDFInfo
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- CN202231659U CN202231659U CN201120380189.3U CN201120380189U CN202231659U CN 202231659 U CN202231659 U CN 202231659U CN 201120380189 U CN201120380189 U CN 201120380189U CN 202231659 U CN202231659 U CN 202231659U
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Abstract
The utility model discloses a toy lockset direct-current motor driving integrated circuit with temperature protection, which comprises a direct-current motor driving circuit (300); two signals at the input end of the direct-current motor driving circuit (300) are connected to the output end of a controller; the output end of the direct-current motor driving circuit (300) is respectively connected to two ends of a direct-current motor (200); the forward rotation, the reverse rotation and the rotation stopping control of the direct-current motor can be realized through the direct-current motor driving circuit (300); and a power switch is built in and capable of directly driving the direct-current motor. Because a temperature protection circuit is arranged on the direct-current motor driving circuit (300), the locked-rotor safety problem of the toy motor resulted from no protection function in the current driving circuit technology is solved. Because the direct-current motor driving circuit (300) is packaged by adopting DIP8 (Dual In-line Package 8) or SOP8 (Standard Operation Procedure 8) in small size, the problems of being many in welding points and high in total cost and the problem that the welding cost is close to the component cost because of adopting separation components in the current driving circuit technology are solved.
Description
Technical field
The utility model relates to toy lockset technical field of integrated circuits, is specifically related to a kind of toy lockset direct current machine drive integrated circult with temperature protection.
Background technology
Toy lockset motion structure on the market all need adopt direct current machine to drive now, and toy lockset direct current machine need have the rotating function greatly, and that generally adopt is H bridge drive circuit (like Fig. 1, shown in Figure 2).Direct current motor drive circuit adopts discrete device to realize mostly in the market; There is following shortcoming in these discrete device schemes: 1, this structure is had relatively high expectations to input control signal; Input signal IA, IB forbid appearing as simultaneously high situation; Otherwise the path of power supply will occur,, serious consequence occur circuit burnout to ground; 2, in order to realize the rotating function of toy lockset direct current machine, each direct current machine need adopt 4 triodes and some resistance to realize the driving to direct current machine at least, and its shared PCB area is very big, and the device solder joint much to process fraction defective also higher.
The utility model content
The utility model provides a kind of toy lockset direct current machine drive integrated circult with temperature protection; The utility model has solved the circuit burnout that is prone to that the toy lockset direct current motor drive circuit that possesses exists; Shared PCB area is very big, and a lot of problem of device solder joint.
For solving the problem that prior art exists; The utility model adopts following technical scheme: the toy lockset direct current machine drive integrated circult of band temperature protection, comprise direct current motor drive circuit (300), and said direct current motor drive circuit (300) has eight pins; Eight pins comprise: two signal input parts (IA, IB) that are used for input controller (100) control signal; Two power ends (VCC), two analogue grounds (GND), the output of two connection direct current machines (200) (OA, OB); Between two signal output parts (OA, OB), be connected in parallel to ceramic disc capacitor (C1); Said direct current motor drive circuit (300) comprises that resistance (R1-R16), diode (D1-D6), power tube (NPN3-NPN6), transistor (NPN1-NPN2), transistor (NPN7-NPN8), transistor (PNP1-PNP2), first prime drive (401), second prime drives (402), first inverted logic circuit (INV1), second inverted logic circuit (INV2) and thermal-shutdown circuit (400); Power end (VCC) is connected with the negative pole of diode (D1), an end of resistance (R6), the emitter of transistor (PNP1), the collector electrode of power tube (NPN5), the negative pole of diode (D3), the negative pole of diode (D4), the collector electrode of power tube (NPN6), the emitter of transistor (PNP2), an end of resistance (R9), the negative pole of diode (D5) respectively; The positive pole of diode (D1) is connected with signal input part (IA), resistance (R1) end, diode (D2) negative pole respectively, diode (D2) plus earth; The other end of resistance (R6) is connected with resistance (R7) end, resistance (R8) end respectively; (pin of (INV2) is connected resistance (R7) other end with second inverted logic circuit; The other end of resistance (R8) is connected with the base stage of transistor (PNP1); The collector electrode of transistor (PNP1) is connected with the base stage of power tube (NPN5), and the emitter of power tube (NPN5) is connected with the collector electrode of the positive pole of diode (D3), signal output part (OB), power tube (NPN3) respectively; The positive pole of diode (D4) is connected with the collector electrode of the emitter of power tube (NPN6), signal output part (OA), power tube (NPN4) respectively; The base stage of power tube (NPN6) is connected with the collector electrode of transistor (PNP2); The base stage of transistor (PNP2) is connected with an end of resistance (R11); The other end of resistance (R11) is connected with the other end of resistance (R9), an end of resistance (R10) respectively, and (pin of (INV1) is connected the other end of resistance (R10) with first inverted logic circuit; The other end of resistance (R1) is connected with an end, the thermal-shutdown circuit (400) of resistance (R2) respectively; The other end of resistance (R2) is connected with an end of resistance (R3), an end of resistance (R4) respectively; The other end of resistance (R4) is connected with the base stage of transistor (NPN1); The grounded emitter of transistor (NPN1), the other end of resistance (R3) are connected the grounded emitter of transistor (NPN8) with an end of preceding stage drive circuit one (401), the collector electrode of transistor (NPN8) respectively; Transistor (NPN8) base stage is connected with an end of resistance (R16), and the other end of resistance (R16) is connected with thermal-shutdown circuit (400) with an end of resistance (R15) simultaneously; (collector electrode of the base stage of two pin of (INV1), power tube (NPN3), transistor (NPN2) is connected the other end of preceding stage drive circuit one (401) with first inverted logic circuit respectively; The base stage of transistor (NPN2) is connected with resistance (R5) end, the emitter of the emitter of transistor (NPN2), power tube (NPN3), the equal ground connection of emitter of power tube (NPN4); (end of the collector electrode of two pin of (INV2), transistor (NPN1), preceding stage drive circuit two (402) is connected the base stage of power tube (NPN4) with second inverted logic circuit respectively; The other end of preceding stage drive circuit two (402) is connected with the collector electrode of transistor (NPN7), an end of resistance (R12) respectively; The base stage of transistor (NPN7) is connected with the other end of resistance (R15); The grounded emitter of transistor (NPN7); The other end of resistance (R12) is connected with the other end of resistance (R5), an end of resistance (R13) respectively; The other end of resistance (R13) is connected with an end of thermal-shutdown circuit (400), resistance (R14) respectively, and resistance (R14) is connected the plus earth of diode (D6) with the negative pole of the positive pole of diode (D5), signal input part (IB), diode (D6) respectively.
Said thermal-shutdown circuit (400) comprises resistance (R17-R29), transistor (NPN9-NPN15), transistor (PNP3-PNP7) and inverted logic circuit (INV3); Power supply (VCC) is connected with resistance (R21) end, resistance (R22) end, resistance (R23) end, resistance (R27) end, transistor (PNP7) emitter respectively; Resistance (R21) other end is connected with the emitter of transistor (PNP3); Resistance (R22) other end is connected with the emitter of transistor (PNP4); Resistance (R23) other end is connected with the emitter of transistor (PNP5); The base stage of transistor (PNP3) is connected with the base stage of transistor (PNP4), the collector electrode of transistor (NPN13), the emitter of transistor (PNP6), the base stage of transistor (PNP5) respectively; The collector electrode of transistor (PNP3) is connected with the collector electrode of transistor (NPN11); The base stage of transistor (NPN11) is connected with the emitter of transistor (NPN11), the base stage of transistor (NPN12) respectively; The emitter of transistor (NPN11) is connected with an end of resistance (R19), an end of resistance (R20), the collector electrode of transistor (NPN10), the collector electrode of transistor (NPN9) respectively, the grounded emitter of transistor (NPN9), and the base stage of transistor (NPN9) is connected with resistance (R17); The collector electrode of transistor (PNP4) is connected with the base stage of transistor (NPN13), the base stage of transistor (PNP6), the collector electrode of transistor (NPN12) respectively; The emitter of transistor (NPN12) is connected with the other end of resistance (R19); The emitter of transistor (NPN13) is connected with the other end of resistance (R20); The base stage of transistor (NPN10) is connected with resistance (R18), the equal ground connection of emitter of transistor (NPN10) and transistor (PNP6); The collector electrode of transistor (PNP5) is connected with the base stage of transistor (NPN14), an end of resistance (R24) respectively, and the other end of resistance (R24) is connected the other end ground connection of resistance (R25) with an end of resistance (R25), the collector electrode of transistor (NPN15) respectively; The other end of resistance (R27) is connected with an end of resistance (R28), an end of resistance (R26) respectively; The other end of resistance (R28) is connected with the base stage of transistor (PNP7); The other end of resistance (R26) is connected with the collector electrode of transistor (NPN14), the grounded emitter of transistor (NPN14); The base stage of transistor (NPN15) is connected with an end of inverted logic circuit (INV3), the grounded emitter of transistor (NPN15); The other end of inverted logic circuit (INV3) is connected the other end ground connection of resistance (R29) with the collector electrode of transistor (PNP7), an end of resistance (R29) respectively.
Said direct current motor drive circuit (300) Chip Packaging is in the Plastic Package of a SOP8 or DIP8.
The utility model is integrated in H bridge-type Drive Structure on the chip piece, and increases control circuit is arranged, and has effectively protected circuit; Increase temperature protection function, can prevent effectively that circuit from damaging owing to temperature is too high; Have and effectively to reduce circuit loss; Can effectively suppress the beneficial effects such as reverse breakdown voltage pulse that inductive load brings.
The utility model is a kind of monolithic H bridge-type band temperature protection toy lockset direct current motor drive circuit, through highly integrated minimizing peripheral component number, increases controlled function and various defencive function, has three kinds of output states: just change, counter-rotating and high-impedance state.
The advantage of the utility model has: 1, H bridge-type Drive Structure is integrated on the chip piece, and increases control circuit is arranged, even under input signal be high situation simultaneously, the path of power supply to ground also can not occur, effectively protected circuit; 2, increase temperature protection function, when circuit temperature reaches set point, input control signal is turn-offed, circuit quits work; When temperature is reduced to set point, the temperature protection function cancellation, circuit is reworked; This temperature protection function can prevent effectively that circuit from damaging owing to temperature is too high; 3, control circuit can also effectively suppress the situation that the common-mode conducting appears in when input signal switches power tube, can effectively reduce circuit loss; 4, the power output tube portion is designed with clamping diode, can effectively suppress the reverse breakdown voltage pulse that inductive load brings; 5, be designed with esd protection structure at circuit input end, prevent that effectively static from causing damage to chip; 6, this Chip Packaging greatly reduces the cost and the circuit board processed complex degree of circuit control panel in the Plastic Package of a SOP8 or DIP8.
Description of drawings
Fig. 1 is the little electric current motor drive circuit of a background technology schematic diagram; 100 expression controllers among Fig. 1,200 expression d.c. motors.
Fig. 2 is the big electric current motor drive circuit of a background technology schematic diagram; 100 expression controllers among Fig. 2,200 expression d.c. motors.
Fig. 3 is the direct current motor drive circuit figure of the utility model; 100 expression controllers among Fig. 3,200 expression d.c. motors, 300 expression direct current motor drive circuits, C1 representes ceramic disc capacitor.
Fig. 4 is the circuit diagram of the direct current motor drive circuit 300 of the utility model, and INV1, INV2 are first, second inverted logic circuit among Fig. 4, and 400 is thermal-shutdown circuit, and 401 is the first preceding stage drive circuit, and 402 is the second preceding stage drive circuit.
Fig. 5 is thermal-shutdown circuit 400 circuit diagrams among Fig. 4; INV3 is an inverted logic circuit among Fig. 5.
Fig. 6 is the utility model direct current motor drive circuit input and output logic diagrams.
Embodiment
As shown in Figure 3; The toy lockset direct current machine drive integrated circult of band temperature protection comprises direct current motor drive circuit (300), and said direct current motor drive circuit (300) has eight pins; Eight pins comprise: two signal input parts (IA, IB) that are used for input controller (100) control signal; Two power ends (VCC), two analogue grounds (GND), the output of two connection direct current machines (200) (OA, OB); Between two signal output parts (OA, OB), be connected in parallel to ceramic disc capacitor (C1).Said direct current motor drive circuit (300) Chip Packaging is in the Plastic Package of a SOP8 or DIP8.Described diode (D3) and diode (D4) are clamping diode.Described diode (D1), diode (D2), diode (D5), diode (D6) are the esd protection diode.
Fig. 3 is a kind of concrete way of realization of the utility model, and 300 among Fig. 3 promptly is monolithic H bridge-type band temperature protection toy (lockset) direct current motor drive circuit that the utility model provides.
As shown in Figure 4; Said direct current motor drive circuit (300) comprises that resistance (R1-R16), diode (D1-D6), power tube (NPN3-NPN6), transistor (NPN1-NPN2), transistor (NPN7-NPN8), transistor (PNP1-PNP2), first prime drive (401), second prime drives (402), first inverted logic circuit (INV1), second inverted logic circuit (INV2) and thermal-shutdown circuit (400); Power end (VCC) is connected with the negative pole of diode (D1), an end of resistance (R6), the emitter of transistor (PNP1), the collector electrode of power tube (NPN5), the negative pole of diode (D3), the negative pole of diode (D4), the collector electrode of power tube (NPN6), the emitter of transistor (PNP2), an end of resistance (R9), the negative pole of diode (D5) respectively; The positive pole of diode (D1) is connected with signal input part (IA), resistance (R1) end, diode (D2) negative pole respectively, diode (D2) plus earth; The other end of resistance (R6) is connected with resistance (R7) end, resistance (R8) end respectively; (pin of (INV2) is connected resistance (R7) other end with second inverted logic circuit; The other end of resistance (R8) is connected with the base stage of transistor (PNP1); The collector electrode of transistor (PNP1) is connected with the base stage of power tube (NPN5), and the emitter of power tube (NPN5) is connected with the collector electrode of the positive pole of diode (D3), signal output part (OB), power tube (NPN3) respectively; The positive pole of diode (D4) is connected with the collector electrode of the emitter of power tube (NPN6), signal output part (OA), power tube (NPN4) respectively; The base stage of power tube (NPN6) is connected with the collector electrode of transistor (PNP2); The base stage of transistor (PNP2) is connected with an end of resistance (R11); The other end of resistance (R11) is connected with the other end of resistance (R9), an end of resistance (R10) respectively, and (pin of (INV1) is connected the other end of resistance (R10) with first inverted logic circuit; The other end of resistance (R1) is connected with an end, the thermal-shutdown circuit (400) of resistance (R2) respectively; The other end of resistance (R2) is connected with an end of resistance (R3), an end of resistance (R4) respectively; The other end of resistance (R4) is connected with the base stage of transistor (NPN1); The grounded emitter of transistor (NPN1), the other end of resistance (R3) are connected the grounded emitter of transistor (NPN8) with an end of preceding stage drive circuit one (401), the collector electrode of transistor (NPN8) respectively; Transistor (NPN8) base stage is connected with an end of resistance (R16), and the other end of resistance (R16) is connected with thermal-shutdown circuit (400) with an end of resistance (R15) simultaneously; (collector electrode of the base stage of two pin of (INV1), power tube (NPN3), transistor (NPN2) is connected the other end of preceding stage drive circuit one (401) with first inverted logic circuit respectively; The base stage of transistor (NPN2) is connected with resistance (R5) end, the emitter of the emitter of transistor (NPN2), power tube (NPN3), the equal ground connection of emitter of power tube (NPN4); (end of the collector electrode of two pin of (INV2), transistor (NPN1), preceding stage drive circuit two (402) is connected the base stage of power tube (NPN4) with second inverted logic circuit respectively; The other end of preceding stage drive circuit two (402) is connected with the collector electrode of transistor (NPN7), an end of resistance (R12) respectively; The base stage of transistor (NPN7) is connected with the other end of resistance (R15); The grounded emitter of transistor (NPN7); The other end of resistance (R12) is connected with the other end of resistance (R5), an end of resistance (R13) respectively; The other end of resistance (R13) is connected with an end of thermal-shutdown circuit (400), resistance (R14) respectively, and resistance (R14) is connected the plus earth of diode (D6) with the negative pole of the positive pole of diode (D5), signal input part (IB), diode (D6) respectively.
As shown in Figure 5; Said thermal-shutdown circuit (400) comprises resistance (R17-R29), transistor (NPN9-NPN15), transistor (PNP3-PNP7) and inverted logic circuit (INV3); Power supply (VCC) is connected with resistance (R21) end, resistance (R22) end, resistance (R23) end, resistance (R27) end, transistor (PNP7) emitter respectively; Resistance (R21) other end is connected with the emitter of transistor (PNP3); Resistance (R22) other end is connected with the emitter of transistor (PNP4); Resistance (R23) other end is connected with the emitter of transistor (PNP5); The base stage of transistor (PNP3) is connected with the base stage of transistor (PNP4), the collector electrode of transistor (NPN13), the emitter of transistor (PNP6), the base stage of transistor (PNP5) respectively; The collector electrode of transistor (PNP3) is connected with the collector electrode of transistor (NPN11), and the base stage of transistor (NPN11) is connected with the emitter of transistor (NPN11), the base stage of transistor (NPN12) respectively, and the emitter of transistor (NPN11) is connected with an end of resistance (R19), an end of resistance (R20), the collector electrode of transistor (NPN10), the collector electrode of transistor (NPN9) respectively; The grounded emitter of transistor (NPN9), the base stage of transistor (NPN9) is connected with resistance (R17); The collector electrode of transistor (PNP4) is connected with the base stage of transistor (NPN13), the base stage of transistor (PNP6), the collector electrode of transistor (NPN12) respectively; The emitter of transistor (NPN12) is connected with the other end of resistance (R19); The emitter of transistor (NPN13) is connected with the other end of resistance (R20); The base stage of transistor (NPN10) is connected with resistance (R18), the equal ground connection of emitter of transistor (NPN10) and transistor (PNP6); The collector electrode of transistor (PNP5) is connected with the base stage of transistor (NPN14), an end of resistance (R24) respectively, and the other end of resistance (R24) is connected the other end ground connection of resistance (R25) with an end of resistance (R25), the collector electrode of transistor (NPN15) respectively; The other end of resistance (R27) is connected with an end of resistance (R28), an end of resistance (R26) respectively; The other end of resistance (R28) is connected with the base stage of transistor (PNP7); The other end of resistance (R26) is connected with the collector electrode of transistor (NPN14), the grounded emitter of transistor (NPN14); The base stage of transistor (NPN15) is connected with an end of inverted logic circuit (INV3), the grounded emitter of transistor (NPN15); The other end of inverted logic circuit (INV3) is connected the other end ground connection of resistance (R29) with the collector electrode of transistor (PNP7), an end of resistance (R29) respectively.
Principle according to Fig. 1-6 pair the utility model describes below:
The compatible TTL/CMOS level of this drive circuit input has good anti-interference; Area through driving of adjustment prime and power tube can obtain the corresponding driving ability; Built-in overheat protector function is turn-offed input control signal when circuit temperature reaches set point, and circuit quits work.When temperature is reduced to set point, the temperature protection function cancellation, circuit is reworked.This temperature protection function can prevent effectively that circuit from damaging owing to temperature is too high; Built-in clamp diode can discharge the reverse impact electric current of inductive load.
The logical relation of IA, IB and OA, OB is as shown in Figure 6, and band temperature protection toy (lockset) the direct current motor drive circuit 300 concrete realization circuit of the utility model are as shown in Figure 4.When input signal IA=L, IB=L; Transistor NPN1, NPN2 turn-off, and preceding stage drive circuit 1 output terminals A is a low level, and the output B of prime driving 2 is a low level; Thereby make transistor NPN3, NPN4, NPN5, NPN6 also be in off state, output signal OA, OB are high-impedance state; When input signal IA=H, IB=H, transistor NPN1, NPN2 conducting drag down A, 2 current potentials of B, and power transistor NPN3, NPN4, NPN5, NPN6 turn-off, and output signal OA, OB are high-impedance state; When input signal IA=H, IB=L, NPN2 manages shutoff, and A point current potential is not had influence, and NPN1 manages conducting, and B point current potential is dragged down, and prime drives 2 output B points and is low level, and NPN4, PNP1, NPN5 manage shutoff.It is high level that prime drives 1 output terminals A, and NPN3, PNP2, NPN13 manage conducting.When being connected to toy (lockset) direct current machine M between OA, two end points of OB, drive toy (lockset) direct current machine and rotate, current direction is shown in arrow i2 among the figure; On the contrary, when input signal IA=L, IB=H, current direction drives toy (lockset) direct current machine M and rotates in the opposite direction shown in arrow i1 among the figure.Through the change of input signal, realize control to toy (lockset) DC motor positive and negative rotation.
Thermal-shutdown circuit is as shown in Figure 5, and operation principle is: when input signal IA, IB had at least one to be high, thermal-shutdown circuit was started working.When input signal IA, IB had at least one to be high, node C, D had at least one for high node F current potential to be dragged down, and R23, PNP5, PNP6, NPN13, R20 constitute the startup branch road of constant-current source in the overheat protector.Because the mirror image effect of PNP3, PNP4 pipe makes NPN23, NPN24 pipe collector electric current approximately equal, the emitter area that NPN11, NPN12 pipe are set then can get than for N:1
V
BENPN11-V
BENPN12=V
Tln
N
i3=?(V
BENPN24-V
BENPN23)/R31=?V
Tln
N/R31
V wherein
TBe about 26mV under the normal temperature, this parameter is a positive temperature coefficient, 1 ℃ of the every rising of temperature, V
TApproximately rising 0.087mV can obtain positive temperature coefficient current i 3 like this.PNP5 pipe mirror image PNP3 pipe collector electric current can obtain PNP5 pipe collector electric current and equal PNP3 pipe collector electric current, i.e. i4=i3.When temperature lower, during the circuit operate as normal, voltage V
DBe about 400mV, NPN14, PNP7 manage shutoff, and output node E is a low level, to not influence of input control signal, circuit operate as normal.NPN15 pipe conducting simultaneously, node G voltage is V
G=i4 * R24; When the temperature rising, current i 4 slowly raises, then voltage V
GSlowly raise, simultaneously the base-emitter voltage V of NPN14 pipe
BEProgressively descend along with temperature raises, fall is about 2mV/ ℃, as node voltage V
GWhen reaching NPN14 pipe Base-Emitter cut-in voltage, NPN14, PNP7 manage conducting, and output node E is a high level, and input control signal is dragged down, and output OA, OB are high-impedance state, and drive circuit quits work.The overheat protector function also is provided with lagging characteristics, and after circuit got into the overheat protector state, node E was a high level, and NPN15 manages shutoff, and node D voltage is V
G=i4 * (R24+R25), temperature must be reduced to and make V this moment
G=i4 * (R24+R25) less than the cut-in voltage of NPN14, circuit just recovers normal operating conditions, and the setting of this sluggishness has avoided short circuit the vibration situation near temperature protection point, to occur, makes circuit again after temperature lowers simultaneously, has self-recovering function.
Prevent the common-mode conducting principle of work and power: when input signal IA=H, IB=L, path CD-ROM drive motor band temperature protection toy (lockset) direct current machine that NPN3, NPN6 form rotates.When input signal switches moment to IA=L, IB=H; The IB signal drags down A point current potential through NPN2 fast, and the NPN3 pipe is turn-offed, and makes the NPN5 conducting through control A point current potential again; Prevented that NPN3 and NPN5 are in conducting state simultaneously; The short circuit of power supply occur, prevent that power supply from damaging, and also effectively reduces the loss of power when signal switches simultaneously to ground.
Because toy (lockset) direct current machine inside is coil, belongs to inductive load, when input signal switched fast, toy (lockset) direct current machine coil current changed direction fast and will produce voltage overshoot.This inside circuit is designed with two clamping diode D3, D4, utilizes the forward conduction voltage drop of diode to carry out clamper, avoids occurring the instantaneous voltage overshoot, thus the protection chip.
This circuit is designed with esd protection diode D1, D2, D5, D6 at input, can effectively prevent the electrostatic protection chip.
What should explain at last is: obviously, the foregoing description only be for explain clearly that the utility model does for example, and be not qualification to execution mode.For the those of ordinary skill in affiliated field, on the basis of above-mentioned explanation, can also make other multi-form variation or change.Here need not also can't give exhaustive to all execution modes.And conspicuous variation of being amplified out thus or change still are among the protection range of the utility model.
Claims (3)
1. be with the toy lockset direct current machine drive integrated circult of temperature protection; It is characterized in that: comprise direct current motor drive circuit (300); Said direct current motor drive circuit (300) has eight pins, and eight pins comprise: two signal input parts (IA, IB) that are used for input controller (100) control signal, two power ends (VCC); Two analogue grounds (GND), the output of two connection direct current machines (200) (OA, OB); Between two signal output parts (OA, OB), be connected in parallel to ceramic disc capacitor (C1); Said direct current motor drive circuit (300) comprises that resistance (R1-R16), diode (D1-D6), power tube (NPN3-NPN6), transistor (NPN1-NPN2), transistor (NPN7-NPN8), transistor (PNP1-PNP2), first prime drive (401), second prime drives (402), first inverted logic circuit (INV1), second inverted logic circuit (INV2) and thermal-shutdown circuit (400); Power end (VCC) is connected with the negative pole of diode (D1), an end of resistance (R6), the emitter of transistor (PNP1), the collector electrode of power tube (NPN5), the negative pole of diode (D3), the negative pole of diode (D4), the collector electrode of power tube (NPN6), the emitter of transistor (PNP2), an end of resistance (R9), the negative pole of diode (D5) respectively; The positive pole of diode (D1) is connected with signal input part (IA), resistance (R1) end, diode (D2) negative pole respectively, diode (D2) plus earth; The other end of resistance (R6) is connected with resistance (R7) end, resistance (R8) end respectively; (pin of (INV2) is connected resistance (R7) other end with second inverted logic circuit; The other end of resistance (R8) is connected with the base stage of transistor (PNP1); The collector electrode of transistor (PNP1) is connected with the base stage of power tube (NPN5), and the emitter of power tube (NPN5) is connected with the collector electrode of the positive pole of diode (D3), signal output part (OB), power tube (NPN3) respectively; The positive pole of diode (D4) is connected with the collector electrode of the emitter of power tube (NPN6), signal output part (OA), power tube (NPN4) respectively; The base stage of power tube (NPN6) is connected with the collector electrode of transistor (PNP2); The base stage of transistor (PNP2) is connected with an end of resistance (R11); The other end of resistance (R11) is connected with the other end of resistance (R9), an end of resistance (R10) respectively, and (pin of (INV1) is connected the other end of resistance (R10) with first inverted logic circuit; The other end of resistance (R1) is connected with an end, the thermal-shutdown circuit (400) of resistance (R2) respectively; The other end of resistance (R2) is connected with an end of resistance (R3), an end of resistance (R4) respectively; The other end of resistance (R4) is connected with the base stage of transistor (NPN1); The grounded emitter of transistor (NPN1), the other end of resistance (R3) are connected the grounded emitter of transistor (NPN8) with an end of preceding stage drive circuit one (401), the collector electrode of transistor (NPN8) respectively; Transistor (NPN8) base stage is connected with an end of resistance (R16), and the other end of resistance (R16) is connected with thermal-shutdown circuit (400) with an end of resistance (R15) simultaneously; (collector electrode of the base stage of two pin of (INV1), power tube (NPN3), transistor (NPN2) is connected the other end of preceding stage drive circuit one (401) with first inverted logic circuit respectively; The base stage of transistor (NPN2) is connected with resistance (R5) end, the emitter of the emitter of transistor (NPN2), power tube (NPN3), the equal ground connection of emitter of power tube (NPN4); (end of the collector electrode of two pin of (INV2), transistor (NPN1), preceding stage drive circuit two (402) is connected the base stage of power tube (NPN4) with second inverted logic circuit respectively; The other end of preceding stage drive circuit two (402) is connected with the collector electrode of transistor (NPN7), an end of resistance (R12) respectively; The base stage of transistor (NPN7) is connected with the other end of resistance (R15); The grounded emitter of transistor (NPN7); The other end of resistance (R12) is connected with the other end of resistance (R5), an end of resistance (R13) respectively; The other end of resistance (R13) is connected with an end of thermal-shutdown circuit (400), resistance (R14) respectively, and resistance (R14) is connected the plus earth of diode (D6) with the negative pole of the positive pole of diode (D5), signal input part (IB), diode (D6) respectively.
2. according to claim 1 with the toy lockset direct current machine drive integrated circult of temperature protection; It is characterized in that: said thermal-shutdown circuit (400) comprises resistance (R17-R29), transistor (NPN9-NPN15), transistor (PNP3-PNP7) and inverted logic circuit (INV3); Power supply (VCC) is connected with resistance (R21) end, resistance (R22) end, resistance (R23) end, resistance (R27) end, transistor (PNP7) emitter respectively; Resistance (R21) other end is connected with the emitter of transistor (PNP3); Resistance (R22) other end is connected with the emitter of transistor (PNP4); Resistance (R23) other end is connected with the emitter of transistor (PNP5); The base stage of transistor (PNP3) is connected with the base stage of transistor (PNP4), the collector electrode of transistor (NPN13), the emitter of transistor (PNP6), the base stage of transistor (PNP5) respectively; The collector electrode of transistor (PNP3) is connected with the collector electrode of transistor (NPN11), and the base stage of transistor (NPN11) is connected with the emitter of transistor (NPN11), the base stage of transistor (NPN12) respectively, and the emitter of transistor (NPN11) is connected with an end of resistance (R19), an end of resistance (R20), the collector electrode of transistor (NPN10), the collector electrode of transistor (NPN9) respectively; The grounded emitter of transistor (NPN9), the base stage of transistor (NPN9) is connected with resistance (R17); The collector electrode of transistor (PNP4) is connected with the base stage of transistor (NPN13), the base stage of transistor (PNP6), the collector electrode of transistor (NPN12) respectively; The emitter of transistor (NPN12) is connected with the other end of resistance (R19); The emitter of transistor (NPN13) is connected with the other end of resistance (R20); The base stage of transistor (NPN10) is connected with resistance (R18), the equal ground connection of emitter of transistor (NPN10) and transistor (PNP6); The collector electrode of transistor (PNP5) is connected with the base stage of transistor (NPN14), an end of resistance (R24) respectively, and the other end of resistance (R24) is connected the other end ground connection of resistance (R25) with an end of resistance (R25), the collector electrode of transistor (NPN15) respectively; The other end of resistance (R27) is connected with an end of resistance (R28), an end of resistance (R26) respectively; The other end of resistance (R28) is connected with the base stage of transistor (PNP7); The other end of resistance (R26) is connected with the collector electrode of transistor (NPN14), the grounded emitter of transistor (NPN14); The base stage of transistor (NPN15) is connected with an end of inverted logic circuit (INV3), the grounded emitter of transistor (NPN15); The other end of inverted logic circuit (INV3) is connected the other end ground connection of resistance (R29) with the collector electrode of transistor (PNP7), an end of resistance (R29) respectively.
3. according to claim 1 with the toy lockset direct current machine drive integrated circult of temperature protection, it is characterized in that: direct current motor drive circuit (300) Chip Packaging is in the Plastic Package of a SOP8 or DIP8.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110302658.4A CN103036493B (en) | 2011-10-09 | 2011-10-09 | Toy lock direct current motor driving integrated circuit with temperature protection |
| CN201120380189.3U CN202231659U (en) | 2011-10-09 | 2011-10-09 | Toy lockset direct-current motor driving integrated circuit with temperature protection |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110302658.4A CN103036493B (en) | 2011-10-09 | 2011-10-09 | Toy lock direct current motor driving integrated circuit with temperature protection |
| CN201120380189.3U CN202231659U (en) | 2011-10-09 | 2011-10-09 | Toy lockset direct-current motor driving integrated circuit with temperature protection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202231659U true CN202231659U (en) | 2012-05-23 |
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|---|---|---|---|
| CN201120380189.3U Expired - Lifetime CN202231659U (en) | 2011-10-09 | 2011-10-09 | Toy lockset direct-current motor driving integrated circuit with temperature protection |
| CN201110302658.4A Active CN103036493B (en) | 2011-10-09 | 2011-10-09 | Toy lock direct current motor driving integrated circuit with temperature protection |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110302658.4A Active CN103036493B (en) | 2011-10-09 | 2011-10-09 | Toy lock direct current motor driving integrated circuit with temperature protection |
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| Country | Link |
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| CN (2) | CN202231659U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103036493A (en) * | 2011-10-09 | 2013-04-10 | 重庆中科芯亿达电子有限公司 | Toy lock direct current motor driving integrated circuit with temperature protection |
| CN109994993A (en) * | 2017-12-28 | 2019-07-09 | 瑞萨电子株式会社 | Power conversion device and semiconductor device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113234A (en) * | 2014-06-11 | 2014-10-22 | 长城电器集团有限公司 | AC voltage-stabilizer drive circuit |
| CN106100505A (en) * | 2016-08-29 | 2016-11-09 | 中山英达思迅智能科技有限公司 | The inverter control circuit driven for ac synchronous motor |
| CN108404423A (en) * | 2018-04-18 | 2018-08-17 | 深圳市沃特沃德股份有限公司 | Down toy temprature control method and primary processor |
| CN115765538B (en) * | 2022-12-08 | 2023-05-16 | 基合半导体（宁波）有限公司 | Driving circuit, chip and electronic equipment |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4266257A (en) * | 1978-10-02 | 1981-05-05 | Johnson Controls, Inc. | Motor over-heating protection circuit |
| IT1318952B1 (en) * | 2000-10-02 | 2003-09-19 | St Microelectronics Srl | HIGH CURRENT PROTECTION CIRCUIT IN PERILLUMINATION CONVERTERS |
| CN201096391Y (en) * | 2007-07-16 | 2008-08-06 | 孙振宇 | Control device for controlling air conditioner switch-on and off and simultaneously controlling sash ventilation |
| CN101907897A (en) * | 2009-06-05 | 2010-12-08 | 中兴通讯股份有限公司 | Temperature control circuit and protection device thereof |
| CN202231659U (en) * | 2011-10-09 | 2012-05-23 | 重庆中科芯亿达电子有限公司 | Toy lockset direct-current motor driving integrated circuit with temperature protection |
-
2011
- 2011-10-09 CN CN201120380189.3U patent/CN202231659U/en not_active Expired - Lifetime
- 2011-10-09 CN CN201110302658.4A patent/CN103036493B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103036493A (en) * | 2011-10-09 | 2013-04-10 | 重庆中科芯亿达电子有限公司 | Toy lock direct current motor driving integrated circuit with temperature protection |
| CN103036493B (en) * | 2011-10-09 | 2017-02-15 | 重庆中科芯亿达电子有限公司 | Toy lock direct current motor driving integrated circuit with temperature protection |
| CN109994993A (en) * | 2017-12-28 | 2019-07-09 | 瑞萨电子株式会社 | Power conversion device and semiconductor device |
| CN109994993B (en) * | 2017-12-28 | 2023-03-24 | 瑞萨电子株式会社 | Power conversion device and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103036493B (en) | 2017-02-15 |
| CN103036493A (en) | 2013-04-10 |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120523 |