CN202189998U - Wide-temperature semiconductor pump laser - Google Patents
Wide-temperature semiconductor pump laser Download PDFInfo
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- CN202189998U CN202189998U CN2011203087865U CN201120308786U CN202189998U CN 202189998 U CN202189998 U CN 202189998U CN 2011203087865 U CN2011203087865 U CN 2011203087865U CN 201120308786 U CN201120308786 U CN 201120308786U CN 202189998 U CN202189998 U CN 202189998U
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Abstract
The utility model discloses a wide-temperature semiconductor pump laser comprising a semiconductor pumping source, a pumping optical coupling system and a laser resonator, wherein the laser resonator comprises a front cavity lens, an output cavity lens and a laser gain medium wide-temperature absorbing structure; and the wide-temperature absorbing structure comprises two double-refraction laser crystals with orthorhombic optical axes, or a double-refraction laser crystal and a pumping optical polarization rotating element. By utilizing the character that absorption bands in sigma and pi directions are distributed differently of the double-refraction laser crystal, pumping light is absorbed in the sigma direction and the pi direction respectively when passing through the double-refraction laser crystal twice, so that the pumping light is absorbed more sufficiently and can cover more wavelength ranges so as to be applicable to a wider temperature range. The wide-temperature laser has a simple structure, and can keep higher output power in a wider working temperature range.
Description
Technical field
The utility model relates to field of lasers, relates in particular to a kind of wide temperature semiconductor pump laser.
Background technology
In existing, semiconductor pump laser generally all need be worked under specified temp, perhaps sacrifices power-performance is realized wide temperature under lower-wattage operational environment requirement.And, require it under wide temperature operational environment, higher power output to be arranged along with demand further to laser.For example, require its working temperature bandwidth that 50 degree are arranged under some demand, this moment, old-fashioned laser cavity structure just was difficult to satisfy the demands.
Summary of the invention
For overcoming the problems referred to above, the utility model proposes a kind of wide temperature semiconductor pump laser, in the operating temperature range of broad, maintains higher power output.
For achieving the above object; The technical scheme that the utility model proposed is: a kind of wide temperature semiconductor pump laser; Comprise semiconductor pumping sources, pump light coupled system and laserresonator, said laserresonator comprise the wide temperature absorbing structure of front cavity mirror, output cavity mirror and gain medium.
Further, said wide temperature absorbing structure comprises birefringence laser crystal and pump light polarization rotator spare; The σ of said birefringence laser crystal and π direction wavelength absorption band distribute inconsistent; The high-reflecting film of said polarization rotator spare rear end face plating pump light wavelength.
Perhaps, said wide temperature absorbing structure comprises the birefringence laser crystal that two light shaft positive cross are placed, and its σ and π direction wavelength absorption band distribute inconsistent.The doping content of said two blocks of birefringence laser crystals can be the same or different, and the dimensions of the two can be the same or different.
Preferably, said birefringence laser crystal is Nd:YVO4.
Preferably, said polarization rotator spare be the pump light wavelength quarter wave plate or near quarter wave plate.
Further, the laserresonator of this wide temperature semiconductor pump laser can also comprise a functional optical device, like nonlinear crystal, adjusting Q crystal or electrooptic crystal etc.
Preferably, said pump light coupled system comprises collimation lens.
Preferably, said semiconductor pumping sources is semiconductor chip, semiconductor bar bar or semiconductor array etc.
Further, this wide temperature semiconductor pump laser can perhaps separate the laser of cavate for micro sheet structure.
The beneficial effect of the utility model: a kind of wide temperature semiconductor pump laser of the utility model, simple in structure, and can be implemented in the operating temperature range of broad and maintain higher power output.
Description of drawings
Fig. 1 is a kind of wide temperature semiconductor pump laser structure embodiment sketch map of the utility model;
Fig. 2 is the absorption cross-section figure of Nd:YVO4;
Fig. 3 is the wide temperature absorbing structure embodiment one of the utility model;
Fig. 4 is the wide temperature absorbing structure embodiment two of the utility model.
Label declaration: 1 ... Semiconductor pumping sources; 2 ... The pump light coupled system; 3 ... Laserresonator; 31 ... Front cavity mirror; 32 ... The output cavity mirror; 33 ... Wide temperature absorbing structure; 33a ... Wide temperature absorbing structure one; 33b ... Wide temperature absorbing structure two; 331 ... The birefringence laser crystal; 332 ... Polarization rotator spare; 333 ... The birefringence laser crystal; 334 ... The birefringence laser crystal; 34 ... The functional optical device.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the utility model is further specified.
Be illustrated in figure 1 as a kind of wide temperature semiconductor pump laser of the utility model; Comprise semiconductor pumping sources 1; Pump light coupled system 2 and laserresonator 3, said laserresonator 3 comprises the wide temperature absorbing structure 33 of front cavity mirror 31, output cavity mirror 32 and gain medium.Wherein, semiconductor pumping sources 1 can be semiconductor chip, semiconductor bar bar or semiconductor array etc., and the device of the pump light of polarization can be provided for laser.Preferably, pump light coupled system 2 can be collimation lens.In addition, can also add like functional optical devices 34 such as nonlinear crystal, adjusting Q crystal or electrooptic crystals, to obtain different types of wide temperature laser in the laserresonator 3.This laser structure can be a micro sheet structure, also can be to separate the cavate laser.
As shown in Figure 3; A kind of embodiment for wide temperature absorbing structure 33; Wide temperature absorbing structure one 33a comprises birefringence laser crystal 331 and pump light polarization rotator spare 332; Like the quarter wave plate of pump light wavelength or near quarter wave plate, the high-reflecting film of the rear end face of this polarization rotator spare 332 plating pump light wavelength.The σ of this birefringence laser crystal 331 and π direction wavelength absorption band distribute inconsistent, and like the Nd:YVO4 crystal, its absorption cross-section is as shown in Figure 2, and its σ direction has higher absorption cross-section on shortwave, and absorption efficiency is high, shown in curve a; And the absorption of π direction is gentle with wavelength variations, and has higher absorption cross-section in the long wave direction, shown in curve b; Curve c is σ and the comprehensive absorption cross-section of π direction, supposes that σ and the absorption of π direction respectively account for half this moment.Absorb for the σ direction when supposing pump light for the first time through birefringence laser crystal 331, then after pump light was reflected through polarization rotator spare 332, its polarization direction had rotated 90 ° when getting into birefringence laser crystal 331 once more, became the π direction and absorbed.So absorb can be so that the absorption of pump light be more abundant for both direction, and can cover more wave-length coverage, also just can adapt to wideer temperature range.
Be illustrated in figure 4 as the another kind of embodiment of wide temperature absorbing structure 33, wide temperature absorbing structure two 33b comprise the birefringence laser crystal 333 that two light shaft positive cross are placed; 334; Its σ and π direction wavelength absorption band distribute inconsistent, same, also can be the Nd:YVO4 crystal.The doping content of these two blocks of birefringence laser crystals 333,334 can be the same or different, and the dimensions of the two can be the same or different.Two birefringence laser crystals 333; 334 light shaft positive cross; Be when supposing pump light through first block of birefringence laser crystal 333 that the σ direction absorbs, then then be the absorption of π direction during through second block of birefringece crystal 334 when pump light, promptly pump light is respectively σ and the absorption of π direction in two crystal; Thereby can cover more wave-length coverage, also just can adapt to wideer temperature range.
The laser that the utility model proposes increases the wide temperature absorbing structure of medium, not only can be used for laser, also can be used for optical amplifier etc. simultaneously.
Although specifically show and introduced the utility model in conjunction with preferred embodiment; But the those skilled in the art should be understood that; In the spirit and scope of the utility model that does not break away from appended claims and limited; In form with details on various variations that the utility model is made, be the protection range of the utility model.
Claims (10)
1. one kind wide temperature semiconductor pump laser comprises semiconductor pumping sources, and pump light coupled system and laserresonator is characterized in that: said laserresonator comprises the wide temperature absorbing structure of front cavity mirror, output cavity mirror and gain medium.
2. a kind of wide temperature semiconductor pump laser as claimed in claim 1 is characterized in that: said wide temperature absorbing structure comprises birefringence laser crystal and pump light polarization rotator spare; The σ of said birefringence laser crystal and π direction wavelength absorption band distribute inconsistent; The high-reflecting film of said polarization rotator spare rear end face plating pump light wavelength.
3. a kind of wide temperature semiconductor pump laser as claimed in claim 1 is characterized in that: said wide temperature absorbing structure comprises the birefringence laser crystal that two light shaft positive cross are placed, and its σ and π direction wavelength absorption band distribute inconsistent.
4. like claim 2 or 3 described a kind of wide temperature semiconductor pump lasers, it is characterized in that: said birefringence laser crystal is Nd:YVO4.
5. a kind of wide temperature semiconductor pump laser as claimed in claim 2 is characterized in that: the quarter wave plate that said polarization rotator spare is the pump light wavelength is perhaps near quarter wave plate.
6. like the described a kind of wide temperature semiconductor pump laser of the arbitrary claim of claim 1-3, it is characterized in that: said laserresonator also comprises a functional optical device.
7. a kind of wide temperature semiconductor pump laser as claimed in claim 6, it is characterized in that: said functional optical device is nonlinear crystal, adjusting Q crystal or electrooptic crystal.
8. like the described a kind of wide temperature semiconductor pump laser of the arbitrary claim of claim 1-3, it is characterized in that: said pump light coupled system comprises collimation lens.
9. like the described a kind of wide temperature semiconductor pump laser of the arbitrary claim of claim 1-3, it is characterized in that: said semiconductor pumping sources is semiconductor chip, semiconductor bar bar or semiconductor array.
10. like the described a kind of wide temperature semiconductor pump laser of the arbitrary claim of claim 1-3, it is characterized in that: said laser is micro sheet structure or the laser that separates cavate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203087865U CN202189998U (en) | 2011-08-24 | 2011-08-24 | Wide-temperature semiconductor pump laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203087865U CN202189998U (en) | 2011-08-24 | 2011-08-24 | Wide-temperature semiconductor pump laser |
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| CN202189998U true CN202189998U (en) | 2012-04-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011203087865U Expired - Fee Related CN202189998U (en) | 2011-08-24 | 2011-08-24 | Wide-temperature semiconductor pump laser |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269727A (en) * | 2014-10-20 | 2015-01-07 | 四川卓众科技有限公司 | Diode-pumped solid laser for effectively eliminating heat effect |
| CN104813550A (en) * | 2012-11-26 | 2015-07-29 | 三菱电机株式会社 | Laser apparatus |
-
2011
- 2011-08-24 CN CN2011203087865U patent/CN202189998U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104813550A (en) * | 2012-11-26 | 2015-07-29 | 三菱电机株式会社 | Laser apparatus |
| CN104269727A (en) * | 2014-10-20 | 2015-01-07 | 四川卓众科技有限公司 | Diode-pumped solid laser for effectively eliminating heat effect |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120411 Termination date: 20140824 |
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| EXPY | Termination of patent right or utility model |