CN202167471U - 一种大尺寸硅芯片采用塑料实体封装的可控硅 - Google Patents

一种大尺寸硅芯片采用塑料实体封装的可控硅 Download PDF

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CN202167471U
CN202167471U CN2011202338349U CN201120233834U CN202167471U CN 202167471 U CN202167471 U CN 202167471U CN 2011202338349 U CN2011202338349 U CN 2011202338349U CN 201120233834 U CN201120233834 U CN 201120233834U CN 202167471 U CN202167471 U CN 202167471U
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aluminium wire
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王琳
吴家健
李攀
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JIANGSU JIEJIE MICROELECTRONICS CO Ltd
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Abstract

本实用新型涉及一种大尺寸硅芯片采用塑料实体封装的可控硅，包括铜底板和引脚，铜底板上通过铅锡焊料焊接有硅芯片，硅芯片上焊接有铝丝内引线，铝丝内引线外通过塑封料塑封，引脚之间开有塑料沟槽。本实用新型优点：工艺简单，热阻小、通态压降小，提高了产品的可靠性。

Description

一种大尺寸硅芯片采用塑料实体封装的可控硅
技术领域
本实用新型涉及一种大尺寸硅芯片采用塑料实体封装的可控硅。
背景技术
目前可控硅用塑料实体封装的芯片尺寸一般不会超过7×7mm，限制塑料实体封装芯片尺寸的主要因素是由于芯片、铜底板、塑封料这三种材料的膨胀系数差异较大，致使包封成产品的硅芯片会存在较大的塑料固化应力和热应力，对产品的可靠性存在极大的不利，所以该类产品的封装合格率和可靠性都比较低。但是因为塑料实体封装的产品在使用中因安装和电极连接都比较方便，所以行业内一直有人在追求较大芯片的实体封装，为了能够包封较大尺寸的芯片，有人在硅芯片的两面，增加了与单晶硅膨胀系数相近的钼片，这对减少硅芯片与铜底板以及塑封料的膨胀系数差异造成的应力是有利的，但是由于增加了两层导热系数偏小、电阻率偏大的金属片和两层焊料层，使器件的通态压降和热阻都会比较明显的增加，使器件产品在使用功率上受到一定的限制。
实用新型内容
本实用新型的目的是提供一种大尺寸硅芯片采用塑料实体封装的可控硅。
本实用新型解决其技术问题所采用的技术方案是：
一种大尺寸硅芯片采用塑料实体封装的可控硅，包括铜底板和引脚，所述铜底板上通过铅锡焊料焊接有硅芯片，所述硅芯片上焊接有铝丝内引线，所述铝丝内引线外通过塑封料塑封，所述引脚之间开有塑料沟槽。
所述铜底板上开有引流槽。
所述引流槽为方形、圆形、椭圆形或方形加对角线形状，所述引流槽断面为V型形状。
所述硅芯片上均匀焊接有多根铝丝内引线，所述每根铝丝内引线在硅芯片上压有两个焊点。
所述硅芯片上均匀焊接有5根铝丝内引线，所述硅芯片上表面覆有加厚的Al层，所述硅芯片下表面覆有加厚的Ag层。
所述Al层厚度为18─22μm，所述Ag层厚度为8─12μm。
所述塑封料为低应力塑封料。
本实用新型的有益效果是：
1、该产品采取的产品结构比使用低膨胀系数过渡层的结构，简洁、紧凑，且具有热阻小、通态压降小的优点。
2、由于产品的结构比较简单，所以该产品的工艺路线比较简单。
3、产品的焊料的空洞率比较低，可以做到空洞率为4%以下。
4、产品采用了多根铝丝、多焊点分布的结构，使硅芯片的电流分布比较均匀，明显减少了产品在工作中产生热斑的几率，提高了产品的可靠性。
5、该产品采取了两面引线膜增厚和适当增厚硅芯片底面焊料层厚度的结构，可以减少封装应力和热应力对芯片造成的横向剪切力，提高了产品的可靠性。
6、产品的通态压降比较小，用200A 测试压降值一般都会小于1.5V。 
附图说明
下面结合附图和具体实施方式对本实用新型作进一步说明。
图1为本实用新型的结构示意图。
图2为铜底板的结构示意图。
图3为图2中沿A-A方向的剖视图。
图4为图3中B处的局部放大示意图。
图5为铝丝内引线排布示意图。
图6为本实用新型的外形图。
其中：1、塑封料，2、铝丝内引线，3、硅芯片，4、铅锡焊料，5、铜底板，6、引脚，7、塑料沟槽，8、引流槽，9、焊点。
具体实施方式
以下实施例仅是用来说明本实用新型，但不限定本实用新型的保护范围。
实施例1
如图1至6所示，本实用新型的一种大尺寸硅芯片采用塑料实体封装的可控硅，包括铜底板5和引脚6，铜底板5上通过铅锡焊料4焊接有硅芯片3，硅芯片3上焊接有铝丝内引线2，铝丝内引线2外通过塑封料1塑封，塑封料1采用低应力塑封料，以保正产品的合格率和可靠性，引脚6之间开有塑料沟槽7，铜底板5上开有引流槽8，引流槽8为方形，引流槽8断面为V型形状，硅芯片3上焊接有5根铝丝内引线2，每根铝丝内引线2在硅芯片3上压有两个焊点9，硅芯片3上表面覆有加厚的Al层，Al层厚度为18μm，硅芯片3下表面覆有加厚的Ag层，Ag层厚度为8μm。
实施例2
如图1至6所示，本实用新型的一种大尺寸硅芯片采用塑料实体封装的可控硅，包括铜底板5和引脚6，铜底板5上通过铅锡焊料4焊接有硅芯片3，硅芯片3上焊接有铝丝内引线2，铝丝内引线2外通过塑封料1塑封，塑封料1采用低应力塑封料，以保正产品的合格率和可靠性，引脚6之间开有塑料沟槽7，铜底板5上开有引流槽8，引流槽8为圆形，引流槽8断面为V型形状，硅芯片3上焊接有5根铝丝内引线2，每根铝丝内引线2在硅芯片3上压有两个焊点9，硅芯片3上表面覆有加厚的Al层，Al层厚度为20μm，硅芯片3下表面覆有加厚的Ag层，Ag层厚度为10μm。
实施例3
如图1至6所示，本实用新型的一种大尺寸硅芯片采用塑料实体封装的可控硅，包括铜底板5和引脚6，铜底板5上通过铅锡焊料4焊接有硅芯片3，硅芯片3上焊接有铝丝内引线2，铝丝内引线2外通过塑封料1塑封，塑封料1采用低应力塑封料，以保正产品的合格率和可靠性，引脚6之间开有塑料沟槽7，铜底板5上开有引流槽8，引流槽8为方形加对角线形状，引流槽8断面为V型形状，硅芯片3上焊接有5根铝丝内引线2，每根铝丝内引线2在硅芯片3上压有两个焊点9，硅芯片3上表面覆有加厚的Al层，Al层厚度为22μm，硅芯片3下表面覆有加厚的Ag层，Ag层厚度为12μm。
采用硅芯片直接用软焊料烧结到铜底板上，硅芯片上面焊接铝丝内引线的产品结构形式（如图1），使产品的结构简洁、通态压降小、热阻比较小。我们之所以采用以上结构的原因是：如果为减小包封应力而采用硅芯片两面用钼片作为过渡层的结构，会使产品增加两层钼片和两层焊料层结构，钼和铅锡焊料的导热率和电阻率都远比铜和铝要大得多（见下表），
                                     铜        铝        钼         铅
电阻率：（10-8Ωm）  1.75       2.83      5.6        20.68
导热系数（W/MK）   401       237        138        34.8
为了避免钼片和焊料层对产品造成的通态压降和热阻的增大，我们避开了使用钼片的结构，而采用了硅芯片直接烧结到铜底板上的产品结构。
为了满足产品结构的需要，我们加厚了芯片两面的金属化电极的厚度，上表面的Al增加到20μm、下表面的Ag增加到10μm，从而减少了电流沿芯片表面流动的电阻，降低了芯片在工作中的发热，同时也减少了由于硅芯片和塑封料及铜底板因为膨胀系数差异而作用到硅芯片上的的剪切力，这样处理的硅芯片的可靠性会大大的提高。 
适当加厚芯片底面焊料层的厚度（50-80微米），用软焊料来吸收铜底板和硅芯片之间的热膨胀应力。我们采用压有特殊引流槽的铜底板（如图2至4），可以使芯片底下的焊料层向外铺展的面积减少，从而保证了焊料层的厚度；另外，我们经过多家焊料的对比，优选了适合于大尺寸芯片使用的焊膏（北京达博专配的295焊膏），满足了既使芯片底部的焊料没有空洞，又保持了足够的焊料层厚度。
为了使芯片底部的焊料层的空洞减到最少，我们还采取在烧结过程中使用手工揉片的办法（在焊料熔融的状态下，使用合适的夹具，将硅芯片沿底板的平面延伸方向进行焊料的摩擦），通过手工揉片可以使焊料和工件之间做到良好的润湿，烧成的产品焊料层的空洞率一般可以控制在4%以下，完成烧结的框架要认真进行缓慢冷却。
采用铝丝作为内引线，对内引线的排布给出了明确的要求：每个芯片上要压5根500μm直径的铝丝，每根铝丝在芯片上要压两个焊点，铝引线以及压点的位置排布要求均匀分布（如图5）。这样连接的内引线可以使芯片上的电流做到均匀分布，以减少产生热斑的机会。

Claims (7)

1.一种大尺寸硅芯片采用塑料实体封装的可控硅，包括铜底板和引脚，其特征在于：所述铜底板上通过铅锡焊料焊接有硅芯片，所述硅芯片上焊接有铝丝内引线，所述铝丝内引线外通过塑封料塑封，所述引脚之间开有塑料沟槽。
2.根据权利要求1所述的一种大尺寸硅芯片采用塑料实体封装的可控硅，其特征在于：所述铜底板上开有引流槽。
3.根据权利要求2所述的一种大尺寸硅芯片采用塑料实体封装的可控硅，其特征在于：所述引流槽为方形、圆形、椭圆形或方形加对角线形状，所述引流槽断面为V型形状。
4.根据权利要求1所述的一种大尺寸硅芯片采用塑料实体封装的可控硅，其特征在于：所述硅芯片上均匀焊接有多根铝丝内引线，所述每根铝丝内引线在硅芯片上压有两个焊点。
5.根据权利要求4所述的一种大尺寸硅芯片采用塑料实体封装的可控硅，其特征在于：所述硅芯片上均匀焊接有5根铝丝内引线，所述硅芯片上表面覆有加厚的Al层，所述硅芯片下表面覆有加厚的Ag层。
6.根据权利要求5所述的一种大尺寸硅芯片采用塑料实体封装的可控硅，其特征在于：所述Al层厚度为18─22μm，所述Ag层厚度为8─12μm。
7.根据权利要求1所述的一种大尺寸硅芯片采用塑料实体封装的可控硅，其特征在于：所述塑封料为低应力塑封料。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102254879A (zh) * 2011-07-05 2011-11-23 启东市捷捷微电子有限公司 一种大尺寸硅芯片采用塑料实体封装的可控硅及其封装工艺
CN106981466A (zh) * 2017-05-10 2017-07-25 捷捷半导体有限公司 带筛孔状低应力铜引线电极的可控硅模块及其组装方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102254879A (zh) * 2011-07-05 2011-11-23 启东市捷捷微电子有限公司 一种大尺寸硅芯片采用塑料实体封装的可控硅及其封装工艺
CN106981466A (zh) * 2017-05-10 2017-07-25 捷捷半导体有限公司 带筛孔状低应力铜引线电极的可控硅模块及其组装方法
CN106981466B (zh) * 2017-05-10 2023-09-19 捷捷半导体有限公司 带筛孔状低应力铜引线电极的可控硅模块及其组装方法

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