CN202150449U - Heat conduction silicon sheet for solar energy inverter - Google Patents
Heat conduction silicon sheet for solar energy inverter Download PDFInfo
- Publication number
- CN202150449U CN202150449U CN 201120056390 CN201120056390U CN202150449U CN 202150449 U CN202150449 U CN 202150449U CN 201120056390 CN201120056390 CN 201120056390 CN 201120056390 U CN201120056390 U CN 201120056390U CN 202150449 U CN202150449 U CN 202150449U
- Authority
- CN
- China
- Prior art keywords
- heat conduction
- silicon sheet
- conduction silicon
- mosfet
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The utility model relates to the silicon field, especially to a heat conduction silicon sheet for a solar energy inverter. The heat conduction silicon sheet comprises a heat conduction silicon sheet body and bonding faces fitting and fixed with a PCB (Printed Circuit Board) and a radiator. The beneficial effects are that the application of the heat conduction silicon sheet changes the point-to-point contact into effective face-to-face contact; the heat conduction silicon sheet has good pliability and heat conduction coefficient. An effective heat conduction path is established in which the heat is conducted to the heat conduction silicon sheet from a heat source MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) and then is conducted to the radiator by the heat conduction silicon sheet; convection and radiation are formed in the radiator in air and finally transmits out the heat of the MOSFET. In a same work environment, if the heat conduction silicon sheet is not applied, a surface temperature of the MOSFET can exceed 110 DEG C, while if the heat conduction silicon sheet is applied, the surface temperature of the MOSFET can be lower than 110 DEG C.
Description
Technical field
The utility model relates to the silica gel field, especially relates to a kind of thermal conductive silicon film that is used for solar inverter of quick heat radiating.
Background technology
The mainly responsible control of inverter will be transformed into the AC energy of voltage stabilization and frequency stabilization from the direct current energy of solar module output and present electrical network, if direct voltage is lower, then boost through AC transformer, promptly obtain standard electric alternating current and press and frequency.To jumbo inverter, because DC bus-bar voltage is higher, exchanging output does not generally need transformer to boost can to reach 220V, in, in the inverter of low capacity because direct voltage is lower, like 12V, 24V, just must the design booster circuit.For the powerful solar inverter that generates electricity by way of merging two or more grid systems; Because power output is bigger; In inverter circuit, will use the MOSFET pipe that power is big, quantity is many, density of heat flow rate is big, the heat dissipation problem of the MOSFET that density of heat flow rate is big directly has influence on life-span and the conversion efficiency of thermoelectric of MOSFET.The heat dissipation problem that solves MOSFET directly improves conversion efficiency of thermoelectric effectively, makes the surface temperature of MOSFET be less than or equal to 110 degrees centigrade.The power of MOSFET and distribution are like accompanying drawing 1.Because the bottom surface of MOSFET is not enough with the evenness of the radiator that is in contact with it, cause their effective point-to-point contact area less than 50%, so heat transfer efficiency is lower.
In the weak point aspect the heat radiation, the inventor has designed the utility model " a kind of thermal conductive silicon film that is used for solar inverter " based on existing solar inverter.
The utility model content
The utility model to the technical problem not enough to be solved of above-mentioned prior art is: the thermal conductive silicon film that is used for solar inverter that a kind of quick heat radiating is provided.
The utility model solves the technical scheme that its technical problem adopted:
A kind of thermal conductive silicon film that is used for solar inverter comprises a thermal conductive silicon film body, is provided with and pcb board and the radiator fixing adhesive surface that fits in thermal conductive silicon film body.Described thermal conductive silicon film body shape is square or circle.It also can be oval or other shapes, get final product corresponding with radiator.
The thermal conductive silicon film has good pressure-strain performance, only need add point pressure a little, and bigger deformation will take place product, can play good joint filling effect, reduces surperficial contact heat resistance, has increased passage of heat, improves heat-conducting effect; The thermal conductive silicon film has different conductive coefficients in addition, is fit to the demand of different heat electronic components of high power; Also have thermal conductive silicon film surface to have natural viscosity, in use certain cementability can be provided; And have superior insulation property, can extensive use in electronic devices and components; Also have good pliability, can cut into various sizes according to client's needs; Also possesses certain shock-absorbing function in addition.
A kind of beneficial effect that is used for the thermal conductive silicon film of solar inverter of the utility model is:
The application of thermal conductive silicon film has changed this point-to-point contact, and becomes effectively contact Face to face, and the thermal conductive silicon film has pliability and conductive coefficient preferably.Set up effective thermally conductive pathways, let heat be transmitted to the thermal conductive silicon film from pyrotoxin MOSFET, be transmitted to radiator by the thermal conductive silicon film again, radiator forms convection current and radiation in air, and the heat transferred of MOSFET is come out the most at last.Same operational environment, if do not use the thermal conductive silicon film, the surface temperature of MOSFET will if use the thermal conductive silicon film, can make the surface temperature of MOSFET be lower than 110 degrees centigrade above 110 degrees centigrade.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the utility model is further specified.
Fig. 1 is power and the distribution map of MOSFET.
Fig. 2 is the overall structure cutaway view of the utility model.
Description of reference numerals:
1, pcb board 3, thermal conductive silicon film body
4, radiator
Embodiment
With reference to Fig. 2, the utility model is to implement like this:
In Fig. 2, a kind of thermal conductive silicon film that is used for solar inverter comprises a thermal conductive silicon film body 3, is provided with and pcb board 1 and the radiator 4 fixing adhesive surface that fits in thermal conductive silicon film body 3.In the present embodiment, thermal conductive silicon film body 3 is shaped as square, and it also can be oval or other shapes, get final product corresponding with radiator.
The above; It only is a kind of preferred embodiment that is used for the thermal conductive silicon film of solar inverter of the utility model; Be not that the technical scope of the utility model is done any restriction; Every technical spirit according to the utility model all still belongs in the scope of the utility model technology any trickle modification, equivalent variations and modification that top embodiment did.
Claims (2)
1. thermal conductive silicon film that is used for solar inverter is characterized in that: comprise a thermal conductive silicon film body (3), be provided with and pcb board (1) and radiator (4) the fixing adhesive surface that fits in thermal conductive silicon film body (3).
2. a kind of thermal conductive silicon film that is used for solar inverter according to claim 1 is characterized in that described thermal conductive silicon film body (3) is shaped as square or circle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120056390 CN202150449U (en) | 2011-08-11 | 2011-08-11 | Heat conduction silicon sheet for solar energy inverter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120056390 CN202150449U (en) | 2011-08-11 | 2011-08-11 | Heat conduction silicon sheet for solar energy inverter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202150449U true CN202150449U (en) | 2012-02-22 |
Family
ID=45591501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120056390 Expired - Fee Related CN202150449U (en) | 2011-08-11 | 2011-08-11 | Heat conduction silicon sheet for solar energy inverter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202150449U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103571201A (en) * | 2012-07-22 | 2014-02-12 | 上海利隆化工化纤有限公司 | Heat-conducting silica gel sheet for solar inverter and preparation method for same |
| CN107484391A (en) * | 2017-08-21 | 2017-12-15 | 华为技术有限公司 | The radiator structure and electronic equipment of a kind of power inverter |
-
2011
- 2011-08-11 CN CN 201120056390 patent/CN202150449U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103571201A (en) * | 2012-07-22 | 2014-02-12 | 上海利隆化工化纤有限公司 | Heat-conducting silica gel sheet for solar inverter and preparation method for same |
| CN103571201B (en) * | 2012-07-22 | 2016-07-06 | 上海利隆化工化纤有限公司 | Heat-conducting silica gel sheet for solar inverter and preparation method thereof |
| CN107484391A (en) * | 2017-08-21 | 2017-12-15 | 华为技术有限公司 | The radiator structure and electronic equipment of a kind of power inverter |
| CN107484391B (en) * | 2017-08-21 | 2020-02-21 | 华为技术有限公司 | Heat radiation structure and electronic equipment of power converter |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120222 Termination date: 20150811 |
|
| EXPY | Termination of patent right or utility model |