CN202103640U - Silicon controlled trigger circuit - Google Patents

Silicon controlled trigger circuit Download PDF

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Publication number
CN202103640U
CN202103640U CN2011200212365U CN201120021236U CN202103640U CN 202103640 U CN202103640 U CN 202103640U CN 2011200212365 U CN2011200212365 U CN 2011200212365U CN 201120021236 U CN201120021236 U CN 201120021236U CN 202103640 U CN202103640 U CN 202103640U
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CN
China
Prior art keywords
triode
diode
transformer
capacitor
thyristor
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Expired - Lifetime
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CN2011200212365U
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Chinese (zh)
Inventor
陈冲
王兴强
孙明宏
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CHANGZHOU HUIBANG ELECTRONICS Co Ltd
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CHANGZHOU HUIBANG ELECTRONICS Co Ltd
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Priority to CN2011200212365U priority Critical patent/CN202103640U/en
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Publication of CN202103640U publication Critical patent/CN202103640U/en
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Abstract

The utility model relates to a bidirectional silicon controlled trigger circuit with low cost and good reliability, comprising a first triode, a second triode, a transformer, a capacitor and a bidirectional controlled silicon. When a control signal input port is in a low level state, the first triode is cut off, a DC power supply charges the capacitor to drive the second triode to be saturated and conductive and to excite the primary coil of the transformer, the secondary coil of the transformer outputs a forward drive voltage via a third diode, the bidirectional controlled silicon is conductive, and a load obtains charges; when the capacitor is full of charges, the second triode is cut off, the third diode is in a reverse direction cut-off state and the load is power off. When the control signal input port is in a high level state, the first triode is saturated and conductive, the capacitor, the first triode and a fifth resistor form an electric discharge loop until the charges on the capacitor are completely discharged, and when the control signal input port is in the low level state, above steps are repeated.

Description

A kind of thyristor gating circuit
Technical field
The utility model relates to a kind of thyristor gating circuit.
Background technology
Existing thyristor gating circuit often adopts chip for driving such as MC3081 to control the silicon controlled break-make.Its weak point is: chip for driving such as MC3081 can only be born lower commutation voltage and critical rate of rise of off state voltage (dv/dt), cause problems such as controllable silicon closes constantly, false triggering.
The utility model content
The technical problem that the utility model will solve provides a kind of simple in structure, with low cost and reliability thyristor gating circuit preferably.
In order to solve the problems of the technologies described above, the utility model provides a kind of thyristor gating circuit, is characterized in comprising: the first triode Q1, the second triode Q2, transformer T1, capacitor C 1 and bidirectional triode thyristor SCR; The base stage of the said first triode Q1 connects an end of first resistance R 1, and the other end of first resistance R 1 is signal input end mouth IN; The collector electrode of the first triode Q1 links to each other through the base stage of capacitor C 1 with the second triode Q2, and the collector electrode of the first triode Q1 links to each other with DC power supply VCC through current-limiting resistance R3, the grounded emitter of the first triode Q1 and the second triode Q2; Be connected with the 5th resistance R 5 between the base stage of the emitter of the first triode Q1 and the second triode Q2; Be provided with the 4th resistance R 4 between the base stage of the said first triode Q1 and the emitter; The collector electrode of the second triode Q2 connects an end of the primary coil of transformer T1, the said DC power supply VCC of another termination of this primary coil, and the two ends of this primary coil are provided with sustained diode 2; The positive terminal of the secondary coil of transformer T1 links to each other with the anode of one the 3rd diode D3, and the negative electrode of the 3rd diode D3 connects the control utmost point of bidirectional triode thyristor SCR; The main terminal of the negative pole termination bidirectional triode thyristor SCR of the secondary coil of transformer T1, two main terminals of bidirectional triode thyristor SCR are series in the ac power supply circuit of load RL.
Further, said thyristor gating circuit also comprises the first diode D1, and the anode of the first diode D1 connects the base stage of the second triode Q2, and the negative electrode of the first diode D1 connects the emitter of the first triode Q1.Thereby when capacitor C 1 tele-release, the capacitor C 1 and the first triode Q1, the 5th resistance R 5, the first diode D1 constitute discharge loop.This circuit adopts the first diode D1, can when capacitor C 1 discharge, avoid damaging the second triode Q2, increases the velocity of discharge simultaneously.Make capacitor C 1 get into the charging SBR fast, to satisfy the needs of case of emergency.
Further, said signal input end mouth IN links to each other with the control end of an intelligent controller.
The technique scheme of the utility model is compared prior art and had the following advantages: the thyristor gating circuit of the utility model adopts capacitance-resistance regularly, obtains more stable pulse width signal, and simple and practical, cost is low; The output of employing transformer isolation, good reliability.This circuit can be used for the signal pulsewidth and requires undemanding silicon controlled driving etc., has with low cost and reliability characteristics preferably.When having solved the employing model and be chip for driving such as MC3081 and controlling controllable silicon, can only bear problems such as the controllable silicon that lower commutation voltage and critical rate of rise of off state voltage (dv/dt) cause closes constantly, false triggering because of chip for driving such as MC3081.
Description of drawings
For the content that makes the utility model is more clearly understood, below basis specific embodiment and combine accompanying drawing, the utility model is done further detailed explanation, wherein
Fig. 1 is the structural representation of the thyristor gating circuit among the embodiment.
Embodiment
See Fig. 1, the thyristor gating circuit of present embodiment comprises: the first triode Q1, the second triode Q2, transformer T1, capacitor C 1 and bidirectional triode thyristor SCR; The base stage of the said first triode Q1 connects an end of first resistance R 1, and the other end of first resistance R 1 is signal input end mouth IN; The collector electrode of the first triode Q1 links to each other through the base stage of capacitor C 1 with the second triode Q2, and the collector electrode of the first triode Q1 links to each other with DC power supply VCC through current-limiting resistance R3, the grounded emitter of the first triode Q1 and the second triode Q2; Be connected with the 5th resistance R 5 between the base stage of the emitter of the first triode Q1 and the second triode Q2; Be provided with the 4th resistance R 4 between the base stage of the said first triode Q1 and the emitter; The collector electrode of the second triode Q2 connects an end of the primary coil of transformer T1, the said DC power supply VCC of another termination of this primary coil, and the two ends of this primary coil are provided with sustained diode 2; The positive terminal of the secondary coil of transformer T1 links to each other with the anode of one the 3rd diode D3, and the negative electrode of the 3rd diode D3 connects the control utmost point of bidirectional triode thyristor SCR; The main terminal of the negative pole termination bidirectional triode thyristor SCR of the secondary coil of transformer T1, two main terminals of bidirectional triode thyristor SCR are series in the ac power supply circuit of load RL.The anode of the first diode D1 connects the base stage of the second triode Q2, and the negative electrode of the first diode D1 connects the emitter of the first triode Q1.
The operating state of foregoing circuit comprises: pulse excitation stage, excitation capacitor discharge stage preparatory stage, concrete job step is following:
When DC power supply VCC begins power supply, and when controlling said signal input end mouth IN and being low level, the said first triode Q1 ends; Said DC power supply VCC charges to capacitor C 1 through said current-limiting resistance R3; Drive the second triode Q2 saturation conduction, thus the primary coil of driver transformer T1, thus make the secondary coil of transformer T1 export positive drive voltage through the 3rd diode D3; Make bidirectional triode thyristor SCR conducting, and then said load RL is got.
After capacitor C 1 is full of; The second triode Q2 ends, and the primary coil of transformer T1 produces inverse electromotive force, discharges through sustained diode 2 afterflows; Said the 3rd diode D3 is in reverse blocking state; The pulsewidth triggering signal of i.e. the 3rd diode D3 output is ended, and bidirectional triode thyristor SCR is ended when the positive and negative half-wave of AC power replaces, and then makes said load RL outage.
When the said signal input end mouth IN of control is high level, the first triode Q1 saturation conduction; The parallel circuits that capacitor C 1, the first triode Q1 and the 5th resistance R 5 and the first diode D1 constitute constitutes discharge loop; Capacitor C 1 is through this discharge loop discharge; Until the tele-release on the capacitor C 1 is intact, repeat above-mentioned steps during for low level at said signal input end mouth IN then.
Said signal input end mouth IN links to each other with the control end of an intelligent controller.This intelligent controller can be single-chip microcomputer, PLC or other intelligent chips.
Said load RL is heating tube, resistive or inductive load, electromagnetically operated valve, A.C. contactor etc.
Also can adopt a pair of one-way SCR to substitute said bidirectional triode thyristor SCR.
Obviously, the foregoing description only be for explain clearly that the utility model does for example, and be not to be qualification to the execution mode of the utility model.For the those of ordinary skill in affiliated field, on the basis of above-mentioned explanation, can also make other multi-form variation or change.Here need not also can't give exhaustive to all execution modes.And conspicuous variation that these spirit that belong to the utility model are extended out or change still are among the protection range of the utility model.

Claims (3)

1. a thyristor gating circuit is characterized in that comprising: first triode (Q1), second triode (Q2), transformer (T1), electric capacity (C1) and bidirectional triode thyristor (SCR);
The base stage of said first triode (Q1) connects an end of first resistance (R1), and the other end of first resistance (R1) is signal input end mouth (IN); The collector electrode of first triode (Q1) links to each other through the base stage of electric capacity (C1) with second triode (Q2), and the collector electrode of first triode (Q1) links to each other with DC power supply (VCC) through current-limiting resistance (R3), the grounded emitter of first triode (Q1) and second triode (Q2); Be connected with the 5th resistance (R5) between the base stage of the emitter of first triode (Q1) and second triode (Q2); Be provided with the 4th resistance (R4) between the base stage of said first triode (Q1) and the emitter;
The collector electrode of second triode (Q2) connects an end of the primary coil of transformer (T1), the said DC power supply of another termination (VCC) of this primary coil, and the two ends of this primary coil are provided with fly-wheel diode (D2);
The positive terminal of the secondary coil of transformer (T1) links to each other with the anode of one the 3rd diode (D3), and the negative electrode of the 3rd diode (D3) connects the control utmost point of bidirectional triode thyristor (SCR); A main terminal of the negative pole termination bidirectional triode thyristor (SCR) of the secondary coil of transformer (T1), two main terminals of bidirectional triode thyristor (SCR) are series in the ac power supply circuit of load (RL).
2. a kind of thyristor gating circuit according to claim 1; It is characterized in that also comprising: first diode (D1); The anode of first diode (D1) connects the base stage of second triode (Q2), and the negative electrode of first diode (D1) connects the emitter of first triode (Q1).
3. a kind of thyristor gating circuit according to claim 1 and 2 is characterized in that: said signal input end mouth (IN) links to each other with the control end of an intelligent controller.
CN2011200212365U 2011-01-24 2011-01-24 Silicon controlled trigger circuit Expired - Lifetime CN202103640U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011200212365U CN202103640U (en) 2011-01-24 2011-01-24 Silicon controlled trigger circuit

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Application Number Priority Date Filing Date Title
CN2011200212365U CN202103640U (en) 2011-01-24 2011-01-24 Silicon controlled trigger circuit

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CN202103640U true CN202103640U (en) 2012-01-04

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102142833A (en) * 2011-01-24 2011-08-03 常州汇邦电子有限公司 Silicon controlled trigger circuit
CN108512535A (en) * 2018-03-29 2018-09-07 华南理工大学 The thyristor gating circuit compensated using posive temperature coefficient thermistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102142833A (en) * 2011-01-24 2011-08-03 常州汇邦电子有限公司 Silicon controlled trigger circuit
CN102142833B (en) * 2011-01-24 2012-10-03 常州汇邦电子有限公司 Silicon controlled trigger circuit
CN108512535A (en) * 2018-03-29 2018-09-07 华南理工大学 The thyristor gating circuit compensated using posive temperature coefficient thermistor
CN108512535B (en) * 2018-03-29 2022-01-18 华南理工大学 Silicon controlled trigger circuit compensated by positive temperature coefficient thermistor

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Granted publication date: 20120104

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