CN202050391U - Delayed starting circuit for MOS transistor - Google Patents
Delayed starting circuit for MOS transistor Download PDFInfo
- Publication number
- CN202050391U CN202050391U CN 201120046608 CN201120046608U CN202050391U CN 202050391 U CN202050391 U CN 202050391U CN 201120046608 CN201120046608 CN 201120046608 CN 201120046608 U CN201120046608 U CN 201120046608U CN 202050391 U CN202050391 U CN 202050391U
- Authority
- CN
- China
- Prior art keywords
- semiconductor
- oxide
- metal
- mos transistor
- startup circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003111 delayed effect Effects 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims description 62
- 239000003990 capacitor Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Landscapes
- Emergency Protection Circuit Devices (AREA)
Abstract
The utility model discloses a delayed starting circuit for an MOS transistor, comprising a resistor, a capacitor and the MOS transistor, wherein one end of the resistor is connected with a control signal input end, the other end of the resistor is connected with the grid of the MOS transistor and one end of the capacitor, the other end of the capacitor is connected with the source of the MOS transistor and a controlled signal input end, and the drain of the MOS transistor is connected with a controlled signal output end. The delayed starting circuit is capable protecting the MOS transistor, avoiding the permanent damage of the MOS transistor due to overlarge current at the starting instant of the MOS transistor, and saving the manufacture cost.
Description
Technical field
The utility model relates to appliance field, relates more specifically to a kind of delayed startup circuit of metal-oxide-semiconductor.
Background technology
In current most electric equipment products, particularly all to use metal-oxide-semiconductor in the high-power electronic device, apply the operating state that a drive signal is come control load circuit Push And Release at the metal-oxide-semiconductor grid.Generally speaking,, be connected to the grid of metal-oxide-semiconductor, thereby realize switch control metal-oxide-semiconductor by a resistance from the control signal of control chip output.Yet in this case, control chip is very fast to the driving voltage transition that metal-oxide-semiconductor provides, and causes very high surge and the noise opened easily, thereby causes the excessive and damage that causes of metal-oxide-semiconductor moment conducting electric current, and influences the EMC characteristic of whole switching circuit.Usually, the method that can directly increase special driving chip by the grid at output control signal and metal-oxide-semiconductor solves this problem, but makes the increase that certainly will cause cost in this way, obviously is not suitable for promoting the use of in enormous quantities.
Therefore, demand that a kind of can to prevent to open immediate current excessive and damage metal-oxide-semiconductor urgently, again can cost-effective metal-oxide-semiconductor delayed startup circuit, overcome above-mentioned defective.
The utility model content
The purpose of this utility model is to provide a kind of follow-on delayed startup circuit that can protect the metal-oxide-semiconductor of metal-oxide-semiconductor, and it is excessive and damage metal-oxide-semiconductor that it can avoid opening immediate current, can save its manufacturing cost again.
To achieve these goals, the utility model provides a kind of delayed startup circuit of metal-oxide-semiconductor, it comprises resistance, electric capacity and metal-oxide-semiconductor, one end connection control signal input of described resistance, the other end of described resistance connects the grid of metal-oxide-semiconductor and an end of described electric capacity, the other end of described electric capacity connects the source electrode and the signal input part of metal-oxide-semiconductor, and the drain electrode of described metal-oxide-semiconductor connects signal output part.
Preferably, in the delayed startup circuit of described metal-oxide-semiconductor, the value of described electric capacity is greater than the 1K pico farad.
Preferably, in the delayed startup circuit of described metal-oxide-semiconductor, the value of described resistance is greater than 10K ohm.
In an embodiment of the present utility model, the delayed startup circuit of described metal-oxide-semiconductor, in the delayed startup circuit of described metal-oxide-semiconductor, the value of described electric capacity is the 100K pico farad, the value of described resistance is 100K ohm.
Compared with prior art, the delayed startup circuit of the utility model metal-oxide-semiconductor since between the grid of metal-oxide-semiconductor and source electrode electric capacity in parallel, connect into a resistance between the grid of metal-oxide-semiconductor and signal input end simultaneously, arranging of described electric capacity and resistance constituted the RC time delay network.Because the existence of RC time delay network; when the input of the electric current of control signal and during the driven MOS pipe; the grid voltage of metal-oxide-semiconductor slowly arrives its threshold value under the effect of electric capacity; make the conducting electric current of metal-oxide-semiconductor become big gradually; thereby avoided of the infringement of the electric current of surge, and then protected metal-oxide-semiconductor and prolonged its useful life metal-oxide-semiconductor.And; because the utility model has been broken through the way that the chip for driving of traditional utilization costliness is finished the delay protection metal-oxide-semiconductor; the RC time delay network that only utilizes comparatively simple resistance capacitance to form can be realized the function of delay protection, thereby has saved the manufacturing cost of metal-oxide-semiconductor.
By following description also in conjunction with the accompanying drawings, it is more clear that the utility model will become, and these accompanying drawings are used to explain embodiment of the present utility model.
Description of drawings
In order to be illustrated more clearly in the technical scheme of the utility model embodiment, to do to introduce simply to the accompanying drawing of required use among the embodiment below, apparently, accompanying drawing in describing below only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the circuit theory diagrams of the delayed startup circuit of the utility model metal-oxide-semiconductor.
Embodiment
Below in conjunction with the accompanying drawing among the utility model embodiment, the technical scheme among the embodiment is clearly and completely described, obviously, described embodiment only is the utility model part embodiment, rather than whole embodiment.With reference now to accompanying drawing, describe embodiment of the present utility model, the similar elements label is represented similar elements in the accompanying drawing.The utility model provides a kind of follow-on delayed startup circuit that can protect the metal-oxide-semiconductor of metal-oxide-semiconductor, and it is excessive and damage metal-oxide-semiconductor that it can avoid opening immediate current, can save its manufacturing cost again.
Figure 1 shows that the circuit theory diagrams of the delayed startup circuit of the utility model metal-oxide-semiconductor.With reference to figure 1,
The delayed startup circuit 10 of the utility model metal-oxide-semiconductor comprises metal-oxide-semiconductor Q1, resistance R 1, capacitor C 1, signal input end 11, signal input part 12 and signal output part 13.Particularly, one end connection control signal input 11 of described resistance R 1, the other end of described resistance R 1 connects the grid of metal-oxide-semiconductor Q1 and an end of described capacitor C 1, the other end of described capacitor C 1 connects source electrode and the input signal input 12 of metal-oxide-semiconductor Q 1, and the drain electrode of described metal-oxide-semiconductor Q1 connects signal output part 13.Resistance R 1 and capacitor C 1 have been formed the RC time delay network.
With reference to figure 1, metal-oxide-semiconductor is applied in the Switching Power Supply usually, in the present embodiment, thereby when the unlatching of control signal from signal input end 11 input driven MOS pipe Q1, because capacitor C 1 is parallel between the grid and source electrode of metal-oxide-semiconductor Q1, thereby this drive current input capacitance C1 charges for capacitor C 1 lentamente, and the grid of metal-oxide-semiconductor Q1 and the voltage difference of source electrode slowly increase.Under the effect of RC time delay network; after the time-delay some time; the grid voltage of metal-oxide-semiconductor progressively rises to its threshold value; make the metal-oxide-semiconductor conducting; start the effect of metal-oxide-semiconductor gradually thereby having played delays time; thereby avoided of the infringement of the Control current of surge, and then protected metal-oxide-semiconductor and prolonged its useful life metal-oxide-semiconductor.
Preferably, in the delayed startup circuit of described metal-oxide-semiconductor, the value of described electric capacity is greater than the 1K pico farad.
Preferably, in the delayed startup circuit of described metal-oxide-semiconductor, the value of described resistance is greater than 10K ohm.
In an embodiment of the present utility model, the delayed startup circuit of described metal-oxide-semiconductor, in the delayed startup circuit of described metal-oxide-semiconductor, the value of described electric capacity is the 100K pico farad, the value of described resistance is 100K ohm.
Abovely the utility model is described, but the utility model is not limited to the embodiment of above announcement, and should contains various modification, equivalent combinations of carrying out according to essence of the present utility model in conjunction with most preferred embodiment.
Claims (4)
1. the delayed startup circuit of a metal-oxide-semiconductor, it is characterized in that, comprise resistance, electric capacity and metal-oxide-semiconductor, one end connection control signal input of described resistance, the other end of described resistance connects the grid of metal-oxide-semiconductor and an end of described electric capacity, the other end of described electric capacity connects the source electrode and the signal input part of metal-oxide-semiconductor, and the drain electrode of described metal-oxide-semiconductor connects signal output part.
2. the delayed startup circuit of metal-oxide-semiconductor as claimed in claim 1 is characterized in that, the value of described electric capacity is greater than the 1K pico farad.
3. the delayed startup circuit of metal-oxide-semiconductor as claimed in claim 1 is characterized in that, the value of described resistance is greater than 10K ohm.
4. the delayed startup circuit of metal-oxide-semiconductor as claimed in claim 1 is characterized in that, the value of described electric capacity is the 100K pico farad, and the value of described resistance is 100K ohm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120046608 CN202050391U (en) | 2011-02-24 | 2011-02-24 | Delayed starting circuit for MOS transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120046608 CN202050391U (en) | 2011-02-24 | 2011-02-24 | Delayed starting circuit for MOS transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202050391U true CN202050391U (en) | 2011-11-23 |
Family
ID=44990682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120046608 Expired - Lifetime CN202050391U (en) | 2011-02-24 | 2011-02-24 | Delayed starting circuit for MOS transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202050391U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102789307A (en) * | 2012-06-29 | 2012-11-21 | 浪潮电子信息产业股份有限公司 | Energy-saving design method and device for restraining instant impact current of high-power fan |
| CN102969883A (en) * | 2012-12-07 | 2013-03-13 | 深圳市核达中远通电源技术有限公司 | Switching power supply burp protection and delay protection circuit |
| CN103042969A (en) * | 2012-12-19 | 2013-04-17 | 无锡创立达科技有限公司 | Fully integrated high-reliability vehicle flasher integrated circuit |
| WO2015143716A1 (en) * | 2014-03-28 | 2015-10-01 | 奇点新源国际技术开发(北京)有限公司 | Information converter power supply circuit, system, and power supply method |
-
2011
- 2011-02-24 CN CN 201120046608 patent/CN202050391U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102789307A (en) * | 2012-06-29 | 2012-11-21 | 浪潮电子信息产业股份有限公司 | Energy-saving design method and device for restraining instant impact current of high-power fan |
| CN102969883A (en) * | 2012-12-07 | 2013-03-13 | 深圳市核达中远通电源技术有限公司 | Switching power supply burp protection and delay protection circuit |
| CN102969883B (en) * | 2012-12-07 | 2016-05-04 | 深圳市核达中远通电源技术有限公司 | A kind of Switching Power Supply hiccup protections and delay protection circuit |
| CN103042969A (en) * | 2012-12-19 | 2013-04-17 | 无锡创立达科技有限公司 | Fully integrated high-reliability vehicle flasher integrated circuit |
| CN103042969B (en) * | 2012-12-19 | 2015-12-30 | 无锡创立达科技有限公司 | Fully integrated high reliability flasher for vehicle integrated circuit |
| WO2015143716A1 (en) * | 2014-03-28 | 2015-10-01 | 奇点新源国际技术开发(北京)有限公司 | Information converter power supply circuit, system, and power supply method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202083915U (en) | Button switch control circuit with zero standby power consumption | |
| CN202050391U (en) | Delayed starting circuit for MOS transistor | |
| CN203574534U (en) | Surge current suppressing circuit | |
| CN105553246A (en) | Power-on/power-off driving circuit and control method therefor | |
| CN105978300A (en) | Cascading type high-voltage solid-state switch | |
| CN203193589U (en) | Power source control circuit and electronic product with slow-start control | |
| CN204376395U (en) | A kind of current suppressing circuit | |
| CN104184127B (en) | Battery protecting circuit | |
| CN201398183Y (en) | Power switch driving circuit | |
| CN101860180B (en) | MOS (Metal Oxide Semiconductor) driving device and power supply module | |
| CN102055304B (en) | Power connection management device | |
| CN203260994U (en) | Protection circuit for preventing power-on restart after powering off | |
| CN201928186U (en) | Sliding frequency soft startup circuit applied to electromagnetic induction heating power supply | |
| CN204578149U (en) | A kind of intelligent cell phone charger | |
| CN102684167B (en) | Power supply power-fail recoil protective circuit | |
| CN103904874A (en) | Delay soft start circuit used for BOOST-PFC | |
| CN203851016U (en) | A time-delay soft start circuit used for BOOST-PFC | |
| CN203554289U (en) | Power supply switch control device | |
| CN208673106U (en) | A kind of vehicle power supply control device and vehicle | |
| CN202495749U (en) | Power source protection circuit | |
| CN102593799A (en) | Relay protection circuit | |
| CN206671934U (en) | A kind of second protection circuit of toaster | |
| CN202121314U (en) | A 48 V circuit hot swap protective device | |
| CN202678946U (en) | Power supply failure recoil protection circuit | |
| CN203233165U (en) | Starting-up surge-protection circuit for camera |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: GUANGZHOU CVT ELECTRONICS TECHNOLOGY CO., LTD. Free format text: FORMER NAME: GUANGZHOU SHIYUAN ELECTRONICS TECHNOLOGY CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 510663 Guangdong city of Guangzhou province Guangzhou Science City Kezhu Road No. 192 Patentee after: Guangzhou Shiyuan Electronic Technology Company Limited Address before: 510663 Guangdong city of Guangzhou province Guangzhou Science City Kezhu Road No. 192 Patentee before: Guangzhou Shiyuan Electronic Technology Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20111123 |