CN202030859U - Seed crystal gripping head for single crystal pulling process - Google Patents
Seed crystal gripping head for single crystal pulling process Download PDFInfo
- Publication number
- CN202030859U CN202030859U CN2011200718860U CN201120071886U CN202030859U CN 202030859 U CN202030859 U CN 202030859U CN 2011200718860 U CN2011200718860 U CN 2011200718860U CN 201120071886 U CN201120071886 U CN 201120071886U CN 202030859 U CN202030859 U CN 202030859U
- Authority
- CN
- China
- Prior art keywords
- seed crystal
- seed
- gripping head
- chuck body
- seed chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a seed crystal gripping head for single crystal pulling process. A seed crystal channel of the seed crystal gripping head is positioned in a seed crystal gripping body but does not penetrates through the seed crystal gripping body, a joint is positioned at one end of the seed crystal gripping body, the seed crystal channel and a pin hole are positioned at the other end of the seed crystal gripping body and are partially coincided with each other, and the direction of the pin hole is crossed with the direction of the seed crystal channel. When a counterweight is connected with the seed crystal gripping head, impurities such as iron rust and the like of gripped positions of the seed crystal gripping head cannot fall into silicon melt to contaminate silicon materials, and the seed crystal gripping head is favorable for improving crystal pulling yield.
Description
Technical field
The utility model relates to a kind of monocrystalline vertical pulling technology seed chuck.
Background technology
In monocrystalline vertical pulling technology, need carry out seeding to the polysilicon liquation under the vacuum environment in the single crystal growing furnace with seed crystal.Seed crystal is installed on the seed chuck, and seed chuck is contained on the weight, drives the drawing of seed crystal realization to single crystal rod by weight.But the seed crystal passage hollow in the seed chuck runs through and is used for seed crystal and passes, enclosed passage not when seed crystal passes, therefore, when the impurity such as rust iron in the weight drop in the melted silicon along with the hollow pipeline slit of running through, thereby stain the silicon material, cause crystal pulling to take off rib, even can not Cheng Jing.
Summary of the invention
The purpose of this utility model provides and can prevent that impurity in the weight from falling into a kind of monocrystalline vertical pulling technology seed chuck of melted silicon.
The technical scheme that the utility model is taked is: a kind of monocrystalline vertical pulling technology seed chuck, comprise joint, seed chuck body, seed crystal passage and pin-and-hole, joint is positioned at seed chuck body one end, seed crystal passage and pin-and-hole are arranged in the other end of seed chuck body and partially overlap, the direction of the direction of pin-and-hole and seed crystal passage intersects, and it is characterized in that the seed crystal passage is arranged in the seed chuck body but not through the seed chuck body.
Adopt the utility model, when weight was connected with seed chuck, the impurity such as rust iron that block the seed chuck position can not drop in the melted silicon and contamination silicon material helps improving the crystal pulling yield rate.
Description of drawings
Fig. 1 is a synoptic diagram of the present utility model.
Sequence number is represented among the figure: threaded connector 1, seed chuck body 2, seed crystal passage 3 and pin-and-hole 4
Embodiment
Below the utility model is described in further detail.
With reference to Fig. 1, this monocrystalline vertical pulling technology comprises threaded connector 1, seed chuck body 2, seed crystal passage 3 and pin-and-hole 4 with seed chuck, threaded connector 1 is positioned at seed chuck body 2 one ends, seed crystal passage 3 and pin-and-hole 4 are arranged in the other end of seed chuck body 2 and partially overlap, the direction of the direction of pin-and-hole 4 and seed crystal passage 3 intersects, and seed crystal passage 3 is arranged in seed chuck body 2 but not through seed chuck body 2.Before the use, this seed chuck is installed on the weight fixing getting final product after then seed crystal being installed in seed crystal passage 3 and passing through to add in the pin-and-hole 4 pin by threaded connector 1.During use, because of seed crystal passage 3 is arranged in seed chuck body 2 but not through seed chuck body 2, impurity such as the rust iron on the weight can not fall in the melted silicon by seed crystal passage 3, can prevent that crystal pulling from taking off rib even phenomenon that can not Cheng Jing takes place, thereby improve the crystal pulling yield rate.
Claims (1)
1. monocrystalline vertical pulling technology seed chuck, comprise joint, seed chuck body, seed crystal passage and pin-and-hole, joint is positioned at seed chuck body one end, seed crystal passage and pin-and-hole are arranged in the other end of seed chuck body and partially overlap, the direction of the direction of pin-and-hole and seed crystal passage intersects, and it is characterized in that the seed crystal passage is arranged in the seed chuck body but not through the seed chuck body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200718860U CN202030859U (en) | 2011-03-18 | 2011-03-18 | Seed crystal gripping head for single crystal pulling process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200718860U CN202030859U (en) | 2011-03-18 | 2011-03-18 | Seed crystal gripping head for single crystal pulling process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202030859U true CN202030859U (en) | 2011-11-09 |
Family
ID=44893164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200718860U Expired - Fee Related CN202030859U (en) | 2011-03-18 | 2011-03-18 | Seed crystal gripping head for single crystal pulling process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202030859U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103469297A (en) * | 2013-07-25 | 2013-12-25 | 浙江晶盛机电股份有限公司 | Sapphire seed chuck with double positioning pins |
| CN104674336A (en) * | 2015-03-16 | 2015-06-03 | 宁晋赛美港龙电子材料有限公司 | Traction mechanism for seed crystals in heavily-doped single crystal production process of single crystal furnace |
-
2011
- 2011-03-18 CN CN2011200718860U patent/CN202030859U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103469297A (en) * | 2013-07-25 | 2013-12-25 | 浙江晶盛机电股份有限公司 | Sapphire seed chuck with double positioning pins |
| CN104674336A (en) * | 2015-03-16 | 2015-06-03 | 宁晋赛美港龙电子材料有限公司 | Traction mechanism for seed crystals in heavily-doped single crystal production process of single crystal furnace |
| CN104674336B (en) * | 2015-03-16 | 2017-02-22 | 宁晋赛美港龙电子材料有限公司 | Traction mechanism for seed crystals in heavily-doped single crystal production process of single crystal furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN209128588U (en) | A kind of Czochralski method mono-crystal furnace takes monocrystalline protective device | |
| CN202030859U (en) | Seed crystal gripping head for single crystal pulling process | |
| WO2013025024A3 (en) | Ingot growing apparatus and method of manufacturing ingot | |
| EP2292812A3 (en) | Method of manufacturing silicon single crystal, apparatus for pulling silicon single crystal and vitreous silica crucible | |
| MY150565A (en) | Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation | |
| CN201762481U (en) | Single crystal furnace seed crystal chuck mechanism | |
| CN204174307U (en) | A kind of outside charging structure | |
| CN203229583U (en) | Three-rod crystal growth device by pulling method | |
| EP2014617A3 (en) | Process For Melting Silicon Powders | |
| CN202131395U (en) | Doping device for producing single crystal silicon in straight pull method | |
| CN204565070U (en) | A kind of high speed steel mould steel-making scalable school mould rod | |
| JP2015107898A5 (en) | ||
| CN201506851U (en) | Seed crystal clamper for mono-crystal furnace | |
| EP2045371A3 (en) | Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot | |
| CN107538631A (en) | Small-sized side's silicon core hi-precision cutting technique | |
| CN202247001U (en) | Novel seed crystal chuck for single crystal furnace | |
| CN204918835U (en) | A draft tube structure for improving vertical pulling silicon single crystal resistivity homogeneity | |
| CN202297843U (en) | Seed crystal heavy punch device of CZ (Czochralski) single crystal furnace | |
| CN205741273U (en) | A kind of feeder of monocrystalline silicon growing furnace | |
| KR20100094039A (en) | The heavy seed chuck for yield improvement | |
| CN200970857Y (en) | Tool for drilling silicon single-crystal rod from irregular silicon briquette | |
| CN201924100U (en) | Silicon single crystal growth furnace with gas cold trap | |
| CN202415736U (en) | Thermal field of monocrystalline silicon manufacturing device | |
| CN203639604U (en) | Flexible shaft lifting type single crystal furnace | |
| CN103712824A (en) | Columnar sediment sampling device for shallow water body |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111109 Termination date: 20120318 |