CN201962347U - Long-life sputtering target component - Google Patents
Long-life sputtering target component Download PDFInfo
- Publication number
- CN201962347U CN201962347U CN2011200280057U CN201120028005U CN201962347U CN 201962347 U CN201962347 U CN 201962347U CN 2011200280057 U CN2011200280057 U CN 2011200280057U CN 201120028005 U CN201120028005 U CN 201120028005U CN 201962347 U CN201962347 U CN 201962347U
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- Prior art keywords
- target
- millimeters
- material assembly
- projection
- groove
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- Expired - Lifetime
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 18
- 239000013077 target material Substances 0.000 claims description 48
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000000712 assembly Effects 0.000 claims 1
- 238000000429 assembly Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000010949 copper Substances 0.000 description 16
- 239000004411 aluminium Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 230000003245 working effect Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 for example Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The utility model discloses a sputtering target component, and aims to provide a structure which is easy to mold, can increase the utilization ratio of an entire target component and prolongs the service life of the target component. The sputtering target component comprises a target and a back plate, wherein the target comprises a sputtering surface and a back face; the back face is provided with a bump; the size of the bump is not smaller than the size of a first region; the first region is a region encircled by a region with a highest target sputtering rate; the back plate is provided with a front face and a back face; the front face is provided with a groove; the size of the groove is matched with the size of the bump of the target; and the bump of the target is arranged in the groove of the back plate.
Description
Technical field
The utility model relates to a kind of extended life sputter target material assembly.
Background technology
In large-scale integrated circuit was made, general by the bombardment target, the particle sputtering sedimentation formed thin film on the target to substrate thereby make.The sputtering target material assembly generally is made up of backboard and target fixed thereon.The target material can be metal, for example, and copper, aluminium, tantalum or thallium.
Yet, in sputter procedure, after target uses for some time, find that some zone has higher sputter rate than other zones, consume sooner, we claim that the target as sputter speed zone that the fastest zone surrounds is the first area.When target use the first area by sputter intact after, backboard just comes out, and so just must change a new target material assembly, and also has been wasted other regional targets whiles, work-ing life is low.For example: the copper sputtering target material assembly is in sputter procedure, and be about 1000kwh general work-ing life, will change target after use for some time.
Therefore, the needs design is a kind of to improve the target rate of utilization, thereby increases the target material assembly structure in work-ing life.
At present, also there are some structures to be used for prolonging the work-ing life of target material assembly.For example adopted a kind of ring structure in the Chinese patent of publication number: CN10680082A, as shown in Figure 1, specifically, target backboard front is provided with an annular recesses 13, the target back side is provided with an annular lug 14, and described annular lug is installed in the described groove.But in the course of processing of target material assembly, generally will will process this ring structure by a few cover work programs such as roughing and precision work, each program all may increase scrap rate.
Therefore, to improve the target material assembly in work-ing life simultaneously again very necessary for a kind of convenient processing of design.
The utility model content
It is simple that the problem that the utility model solves provides a kind of moulding, the sputtering target material assembly of long service life.
For addressing the above problem, the sputtering target material assembly that the utility model provides comprises: target, and described target comprises the sputter face and the back side, and the described back side is provided with projection, the size of described projection is not less than the size of first area, and described first area is the zone that the fastest zone of target as sputter speed surrounds; Backboard, described backboard has the front and the back side, and described front is provided with groove, described groove size and described target size of lug coupling, described target projection is installed in the described backboard groove.
Optionally, described target projection by welded and installed in described backboard groove.
Optionally, described projection is positioned at described target center, and described groove is positioned at described backboard center.
Optionally, described target is a circular slab, and described backboard is a circular slab, and described projection is a round bump, and described groove is a circular groove.
Optionally, described projection diameter and described target diameter ratio are 0.47-0.61.
Optionally, described target diameter is 425 millimeters to 465 millimeters, and the diameter of described target projection is 220 millimeters to 260 millimeters.
Optionally, described target diameter is 445.13 millimeters, and the diameter of described target projection is 240 millimeters.
Optionally, described bump height and described target thickness ratio are 0.13-0.60.
Optionally, described target thickness is 10 millimeters to 15 millimeters, and described target bump height is 2 millimeters to 6 millimeters.
Optionally, described target thickness is 12.7 millimeters, and described target bump height is 4 millimeters.
Compared with prior art, the present invention has the following advantages: because the target back side is provided with projection downwards, therefore, target is in sputter procedure, and the target in the groove makes the utilization ratio of monoblock target material assembly improve, and work-ing life is also long and monoblock target assembly forming is simple.
Description of drawings
Fig. 1 is a kind of target material assembly sectional view that adopts ring structure of prior art;
Fig. 2 is a kind of target material assembly structure vertical view commonly used of prior art;
Fig. 3 is the sectional view of target material assembly commonly used shown in Figure 2 along A-A ';
Fig. 4 is the example structure vertical view of a kind of target material assembly of the utility model;
Fig. 5 is the cross-section structure decomposing schematic representation of Fig. 4 target material assembly along B-B ';
Fig. 6 is that Fig. 4 target material assembly is installed sectional view along the cross-section structure of B-B ';
Fig. 7 is that Fig. 2 target material assembly commonly used uses to need change target the time sectional view along A-A ';
Fig. 8 is a regional enlarged drawing shown in Figure 7;
Fig. 9 is that Fig. 4 target material assembly uses to need change target the time sectional view along B-B ';
Figure 10 is a regional enlarged drawing shown in Figure 9.
Embodiment
Purport of the present utility model is, at the very fast regional back side of target consumption projection is set, and the amount that makes the monoblock target effectively use in sputter procedure obtains increasing, thus the work-ing life of improving whole target material assembly.
Based on this, the sputtering target material assembly that the utility model provides comprises: target, and described target comprises the sputter face and the back side, and the described back side is provided with projection, the size of described projection is not less than the size of first area, and described first area is the zone that the fastest zone of target as sputter speed surrounds; Backboard, described backboard has the front and the back side, and described front is provided with groove, described groove size and described target size of lug coupling, described target projection is installed in the described backboard groove.
In specific embodiment, described projection diameter and described target diameter ratio can be 0.47-0.61.For example, described target diameter can be 425 millimeters to 465 millimeters, and the diameter of described target projection can be 220 millimeters to 260 millimeters.
In specific embodiment, described bump height and described target thickness ratio can be 0.13-0.60.For example, described target thickness can be 10 millimeters to 15 millimeters, and described target bump height can be 2 millimeters to 6 millimeters.
Below by accompanying drawing specific embodiment of the utility model is done more specifically explanation.
With the circular copper target of same size aluminium backboard target material assembly, 445.13 millimeters of target diameters, thickness is example for 12.7 millimeters, adopts bombardment target material assembly structure commonly used and embodiment of the present utility model to do simultaneous test.
Fig. 2 is a kind of circular copper target aluminium backboard target material assembly structure vertical view commonly used, and mainly by circular aluminium backboard 21, circular copper target 22 is formed, and target is fixed on the backboard with modes such as welding.Circular aluminium backboard 21 has identical rotation axes of symmetry with circular copper target 22.
Fig. 3 is the sectional view of Fig. 2 target commonly used along A-A '.
Fig. 4 is the circular copper target of an a kind of the utility model aluminium backboard target material assembly structure vertical view.Described target material assembly mainly is made up of with circular copper target 32 circular aluminium backboard 31, and circular aluminium backboard 31 has identical rotation axes of symmetry with circular copper target 32.Described aluminium backboard has the front and the back side, described front comprises circular groove 33, described copper target comprises the sputter face and the back side, the described back side comprises circular copper material projection 34, the size of described circular copper material projection 34 is not less than the size of first area, described first area is the zone that the fastest zone of target as sputter speed surrounds, circular groove 33 couplings on described circular copper material projection 34 sizes and the described aluminium backboard, and described target copper material projection 34 is installed in the described aluminium backboard groove 33.Wherein, the diameter of described copper target projection 34 is 240 millimeters, and described copper target projection 34 highly is 4 millimeters.As shown in Figure 5, this structure realizes in target material assembly processing easily.When target material assembly does not use, as shown in Figure 6 along the sectional view of B-B '.
After bombarding Fig. 2 and two kinds of structure target material assembly 1000kwh shown in Figure 4 respectively, Fig. 2 target material assembly structure commonly used along the sectional view of A-A ' as shown in Figure 7, the central zone also is the first area, forms a groove.When groove lowest part during near the aluminium backboard, as shown in Figure 8, for example, for changing the target material assembly condition, 10.7 millimeters targets parts that non-first area part is also thicker had just been wasted when the thinnest zone was 2 millimeters.
Fig. 9 is the sectional view of Fig. 4 target material assembly bombardment back along B-B ', and the central zone also is that the first area forms a groove.When groove lowest part during near back veneer material, as shown in figure 10, the thinnest zone can reach depth of groove, promptly just need to change target material assembly for 4 millimeters, this moment, 12.7 millimeters of former target thickness were used in the first area, compared with result after the target material structure bombardment commonly used shown in Figure 8, downward use can be continued in non-first area on 10.7 millimeters bases, generally, the utilization ratio of whole target improves 18.6% than target material assembly structure target commonly used, thereby makes the longer service life of monoblock target material assembly.
The above only is preferred embodiment of the present utility model, is not the utility model is done any pro forma restriction.Any those of ordinary skill in the art, do not breaking away under the technical solutions of the utility model scope situation, all can utilize the technology contents of above-mentioned announcement that technical solutions of the utility model are made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solutions of the utility model, all still belongs in the scope of technical solutions of the utility model protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present utility model.
Claims (10)
1. sputtering target material assembly comprises: the backboard of target and carrying target, it is characterized in that,
Described target comprises the sputter face and the back side, and the described back side is provided with projection, and the size of described projection is not less than the size of first area, and described first area is the zone that the fastest zone of target as sputter speed surrounds;
Described backboard has the front and the back side, and described front is provided with groove, described groove size and described target size of lug coupling, and described target projection is installed in the described backboard groove.
2. sputtering target material assembly according to claim 1 is characterized in that, described target projection by welded and installed in described backboard groove.
3. sputtering target material assembly according to claim 1 is characterized in that described projection is positioned at described target center, and described groove is positioned at described backboard center.
4. according to claim 1 or 3 described sputtering target material assemblies, it is characterized in that described target is a circular slab, described backboard is a circular slab, and described projection is a round bump, and described groove is a circular groove.
5. sputtering target material assembly according to claim 4 is characterized in that, described projection diameter and described target diameter ratio are 0.47-0.61.
6. sputtering target material assembly according to claim 5 is characterized in that, described target diameter is 425 millimeters to 465 millimeters, and the diameter of described target projection is 220 millimeters to 260 millimeters.
7. sputtering target material assembly according to claim 6 is characterized in that, described target diameter is 445.13 millimeters, and the diameter of described target projection is 240 millimeters.
8. sputtering target material assembly according to claim 4 is characterized in that, described bump height and described target thickness ratio are 0.13-0.60.
9. sputtering target material assembly according to claim 8 is characterized in that, described target thickness is 10 millimeters to 15 millimeters, and described target bump height is 2 millimeters to 6 millimeters.
10. sputtering target material assembly according to claim 9 is characterized in that, described target thickness is 12.7 millimeters, and described target bump height is 4 millimeters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200280057U CN201962347U (en) | 2011-01-27 | 2011-01-27 | Long-life sputtering target component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200280057U CN201962347U (en) | 2011-01-27 | 2011-01-27 | Long-life sputtering target component |
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| Publication Number | Publication Date |
|---|---|
| CN201962347U true CN201962347U (en) | 2011-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200280057U Expired - Lifetime CN201962347U (en) | 2011-01-27 | 2011-01-27 | Long-life sputtering target component |
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| CN (1) | CN201962347U (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103114271A (en) * | 2012-07-03 | 2013-05-22 | 上海华力微电子有限公司 | Sputtering target technique and sputtering technique |
| CN103343321A (en) * | 2012-03-12 | 2013-10-09 | 有研亿金新材料股份有限公司 | Method of manufacturing sputtering target |
| CN103658898A (en) * | 2012-09-20 | 2014-03-26 | 宁波江丰电子材料有限公司 | Target module welding method |
| CN104416281A (en) * | 2013-08-26 | 2015-03-18 | 宁波江丰电子材料股份有限公司 | Target assembly and manufacturing method thereof |
| CN105008582A (en) * | 2013-01-04 | 2015-10-28 | 东曹Smd有限公司 | Silicon sputtering target with enhanced surface profile and improved performance and methods of making the same |
| CN108581169A (en) * | 2018-05-04 | 2018-09-28 | 宁波江丰电子材料股份有限公司 | Target material assembly and processing method |
| CN109385608A (en) * | 2017-08-08 | 2019-02-26 | 宁波江丰电子材料股份有限公司 | Target material assembly and its manufacturing method |
| CN110125568A (en) * | 2019-05-21 | 2019-08-16 | 深圳市亿和精密科技集团有限公司 | A kind of spiro connecting piece welding structure and welding method for server |
| CN113275731A (en) * | 2021-05-19 | 2021-08-20 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for molybdenum target and back plate |
-
2011
- 2011-01-27 CN CN2011200280057U patent/CN201962347U/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103343321A (en) * | 2012-03-12 | 2013-10-09 | 有研亿金新材料股份有限公司 | Method of manufacturing sputtering target |
| CN103114271A (en) * | 2012-07-03 | 2013-05-22 | 上海华力微电子有限公司 | Sputtering target technique and sputtering technique |
| CN103114271B (en) * | 2012-07-03 | 2015-10-28 | 上海华力微电子有限公司 | A kind of sputtering target material technique and sputtering technology |
| CN103658898A (en) * | 2012-09-20 | 2014-03-26 | 宁波江丰电子材料有限公司 | Target module welding method |
| CN103658898B (en) * | 2012-09-20 | 2016-03-16 | 宁波江丰电子材料股份有限公司 | Welding method of target assembly |
| CN105008582A (en) * | 2013-01-04 | 2015-10-28 | 东曹Smd有限公司 | Silicon sputtering target with enhanced surface profile and improved performance and methods of making the same |
| CN104416281A (en) * | 2013-08-26 | 2015-03-18 | 宁波江丰电子材料股份有限公司 | Target assembly and manufacturing method thereof |
| CN104416281B (en) * | 2013-08-26 | 2017-05-17 | 宁波江丰电子材料股份有限公司 | Target assembly and manufacturing method thereof |
| CN109385608A (en) * | 2017-08-08 | 2019-02-26 | 宁波江丰电子材料股份有限公司 | Target material assembly and its manufacturing method |
| CN108581169A (en) * | 2018-05-04 | 2018-09-28 | 宁波江丰电子材料股份有限公司 | Target material assembly and processing method |
| CN110125568A (en) * | 2019-05-21 | 2019-08-16 | 深圳市亿和精密科技集团有限公司 | A kind of spiro connecting piece welding structure and welding method for server |
| CN113275731A (en) * | 2021-05-19 | 2021-08-20 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for molybdenum target and back plate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 315400 Ningbo City, Yuyao Province Economic Development Zone, state science and Technology Industrial Park Road, No. 198, No. Patentee after: NINGBO JIANGFENG ELECTRONIC MATERIAL CO., LTD. Address before: 315400 Ningbo City, Yuyao Province Economic Development Zone, state science and Technology Industrial Park Road, No. 198, No. Patentee before: Ningbo Jiangfeng Electronic Materials Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20110907 |
|
| CX01 | Expiry of patent term |