CN201858877U - Point contact mesh belt of silicon wafer sintering stove - Google Patents
Point contact mesh belt of silicon wafer sintering stove Download PDFInfo
- Publication number
- CN201858877U CN201858877U CN2010205818606U CN201020581860U CN201858877U CN 201858877 U CN201858877 U CN 201858877U CN 2010205818606 U CN2010205818606 U CN 2010205818606U CN 201020581860 U CN201020581860 U CN 201020581860U CN 201858877 U CN201858877 U CN 201858877U
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- mesh belt
- point contact
- sintering
- contact
- silicon wafers
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Abstract
The utility model relates to a point contact mesh belt of a silicon wafer sintering stove. The point contact mesh belt is formed by weaving transverse steel wires and longitudinal steel wires; point contact convex bodies are arranged on the transverse steel wires or the longitudinal steel wires at identical intervals; and a ceramic coating is arranged at the surface of each point contact convex body. As the point contact convex bodies are additionally arranged on the conveying mesh belt of the sintering stove, when silicon wafers are placed at the conveying mesh belt, the silicon wafers are in point contact with the upper end face of the conveying mesh belt, enough space is left at the lower surfaces of the silicon wafers during sintering, and hot gas flow can be homogenized at the upper and the lower surfaces of the silicon wafers so as to overcome a plurality of defects caused by the face contact of the mesh belt and a battery plate; the organic matters in aluminum paste can be volatilized fully, and the influence of ohm contact of residual electrodes of organic matters and the silicon wafers is reduced; the surface quality of the back field of the batter plate is improved, and the aluminum thorns generated at the back field of the battery plate are eliminated; the sintering efficiency is improved, and the influence of the conveying mesh belt on the silicon wafer sintering quality is reduced; and the sintering quality of the battery plate is also improved.
Description
Technical field:
The utility model relates to solar battery sheet production sintering furnace, relates in particular to a kind of transporting reticulation belt of sintering furnace.
Background technology:
In the whole production technological process of solar cell piece, diffusion, plated film and sintering three process are the most important, and wherein sintering is to make the crystalline silicon substrate really have a vital step of photoelectric converting function.Therefore, the performance quality of agglomerating plant directly affects the quality of battery sheet.
At present, solar cell piece adopts the once sintered co-firing technology of net belt type sintering furnace usually, forms the Ohmic contact of upper/lower electrode simultaneously.Be printed on the silicon chip of silver slurry, aluminium paste, through oven dry organic solvent volatilized fully, rete shrinks becomes the decorating film tight adhesion on silicon chip, at this moment can be considered metal electrode material layer and silicon chip and contacts.When the heating of electrode metal material and single crystal silicon semiconductor reached eutectic temperature, the monocrystalline silicon atom was added in the alloy electrode material of fusion in certain proportion, formed Ohmic contact.
In existing net belt type sintering furnace, silicon chip transmits guipure and all adopts fricting transmissioning mode, promptly will transmit guipure with regulating wheel and be sleeved between driving wheel, driven pulley and the regulating wheel, transmits guipure and drives slow moving by driving wheel.Transmitting guipure adopts punching of the steel plate to form, or form with braided steel wire, between silicon chip and the guipure is multi-thread the contact, the flatness of guipure and the smoothness of operation all can influence the outward appearance and the electrical property of battery sheet, the main flow manufacture of solar cells adopts positive and back side while Fast Sintering at present, yet because silicon chip back is bigger by the area that guipure blocks, guipure has hindered thermal current flowing at battery sheet reverse side in the stove, make the sintering condition of battery sheet positive and negative differ bigger, furnace atmosphere and guipure are very big to the sintering influence of battery sheet.There is following shortcoming: a in sintering furnace at present commonly used, because guipure is that face contacts with the battery sheet, behind guipure and the solar cell back many line segments that contact are arranged, in sintering process, influenced the organic performance in the aluminium paste that contacts the line segment place, organic substance residues has influenced the Ohmic contact of electrode and silicon chip; B, battery sheet and guipure comprehensive engagement cover guipure, are unfavorable for the stirring of gas stream in the stove, easily cause the battery sheet inequality of being heated; Be in the aluminium under the molten condition on battery sheet and the guipure contact point, adsorb the foreign material on the guipure easily, the surface topography of influence back of the body field, even produce the aluminium thorn, cause the generation of waste product.
The utility model content:
In order to overcome existing guipure above shortcomings in the net belt type silicon chip sintering furnace, the purpose of this utility model provides a kind of some contact guipure of silicon chip sintering furnace.
The technical scheme that the utility model adopted is:
The point contact guipure of described a kind of silicon chip sintering furnace, it by transverse steel wire and vertically braided steel wire form, it is characterized in that: in transverse steel wire or vertically be provided with to the steel wire equal intervals and contact a convex body.
Further, the transverse steel wire equal intervals be provided with some a contact convex body.
Further, be provided with ceramic coating on a surface of contact convex body.
Further, the cross sectional shape of described some contact convex body is an inverted V-shaped, and its top is a circular arc.
Because in the transverse steel wire of sintering furnace transporting reticulation belt or vertically set up the inverted V-shaped convex body on the steel wire, and contact with silicon chip, on sintering furnace transporting reticulation belt and upper surface that silicon chip contacts, several inverted V-shaped convex bodys have been set up equably like this, when silicon chip is placed on transporting reticulation belt, supporting structure contacts for point between the upper surface of transporting reticulation belt and the silicon chip, silicon chip lower surface when sintering leaves enough spaces, thermal current can be in silicon chip lower surface homogenizing, and can make the silicon chip upper and lower surface realize that the thermal current diffusion is balanced, supporting construction with the time point contact can make silicon chip more steady in running, overcome and contacted the many defectives that produced because of guipure and battery are unilateral, organic can giving full play in the aluminium paste reduced the influence of the Ohmic contact of organic substance residues electrode and silicon chip; Improved the surface quality of cell back field, eliminated the cell back field and produced the phenomenon that aluminium stings, can improve sintering efficient, reduced the influence of transporting reticulation belt, can improve battery sheet sintering quality again the silicon chip sintering quality.
Description of drawings:
Fig. 1 is a structural representation of the present utility model;
Fig. 2 is an A-A cutaway view among Fig. 1;
Fig. 3 is the structural representation of inverted V-shaped convex body
Among the figure, the 1-transverse steel wire; The vertical steel wire of 2-; 3-point contact convex body; The 4-ceramic coating; The 5-circular arc.
The specific embodiment:
Below in conjunction with the description of drawings specific embodiment of the present utility model:
Embodiment 1: the some contact guipure of described a kind of silicon chip sintering furnace, as Fig. 1, Fig. 2, shown in Figure 3, it is formed by transverse steel wire 1 and 2 braidings of vertical steel wire, transverse steel wire 1 equal intervals be provided with some a contact convex body 3, the cross sectional shape of described some contact convex body 3 is an inverted V-shaped, its top is a circular arc 5, is provided with ceramic coating 4 in the appearance of circular arc 5.
Embodiment 2: the some contact guipure of described a kind of silicon chip sintering furnace, as Fig. 1, Fig. 2, shown in Figure 3, it is formed by transverse steel wire 1 and 2 braidings of vertical steel wire, vertically be provided with to steel wire 2 equal intervals a contact convex body 3, the cross sectional shape of described some contact convex body 3 is an inverted V-shaped, its top is a circular arc 5, is provided with ceramic coating 4 in the appearance of circular arc 5.
Embodiment 3: the some contact guipure of described a kind of silicon chip sintering furnace, as Fig. 1, Fig. 2, shown in Figure 3, it is formed by transverse steel wire 1 and 2 braidings of vertical steel wire, contact convex body 3 in transverse steel wire 1 with vertically being provided with to steel wire 2 equal intervals, the cross sectional shape of described some contact convex body 3 is an inverted V-shaped, its top is a circular arc 5, is provided with ceramic coating 4 in the appearance of circular arc 5.
Claims (4)
1. the some contact guipure of a silicon chip sintering furnace, it by transverse steel wire (1) and vertically steel wire (2) braiding form, it is characterized in that: in transverse steel wire (1) or vertically be provided with to steel wire (2) equal intervals and contact a convex body (3).
2. according to the some contact guipure of the described a kind of silicon chip sintering furnace of claim 1, it is characterized in that: transverse steel wire (1) equal intervals be provided with some a contact convex body (3).
3. according to the some contact guipure of the described a kind of silicon chip sintering furnace of claim 1, it is characterized in that: be provided with ceramic coating (4) on a surface of contact convex body (3).
4. according to the some contact guipure of the described a kind of silicon chip sintering furnace of claim 1, it is characterized in that: the cross sectional shape of described some contact convex body (3) is an inverted V-shaped, and its top is circular arc (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205818606U CN201858877U (en) | 2010-10-29 | 2010-10-29 | Point contact mesh belt of silicon wafer sintering stove |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205818606U CN201858877U (en) | 2010-10-29 | 2010-10-29 | Point contact mesh belt of silicon wafer sintering stove |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201858877U true CN201858877U (en) | 2011-06-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205818606U Expired - Fee Related CN201858877U (en) | 2010-10-29 | 2010-10-29 | Point contact mesh belt of silicon wafer sintering stove |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201858877U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102042751A (en) * | 2010-10-29 | 2011-05-04 | 常州亿晶光电科技有限公司 | Point contact mesh belt of silicon wafer sintering furnace |
-
2010
- 2010-10-29 CN CN2010205818606U patent/CN201858877U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102042751A (en) * | 2010-10-29 | 2011-05-04 | 常州亿晶光电科技有限公司 | Point contact mesh belt of silicon wafer sintering furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110608 Termination date: 20131029 |