CN201854425U - Silicon microphone - Google Patents
Silicon microphone Download PDFInfo
- Publication number
- CN201854425U CN201854425U CN2010202742198U CN201020274219U CN201854425U CN 201854425 U CN201854425 U CN 201854425U CN 2010202742198 U CN2010202742198 U CN 2010202742198U CN 201020274219 U CN201020274219 U CN 201020274219U CN 201854425 U CN201854425 U CN 201854425U
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- Prior art keywords
- vent
- abat
- silicon microphone
- mems chip
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 42
- 239000010703 silicon Substances 0.000 title claims abstract description 42
- 230000005236 sound signal Effects 0.000 claims abstract description 8
- 230000000903 blocking effect Effects 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 11
- 230000006378 damage Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000003466 welding Methods 0.000 description 3
- 230000003116 impacting effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
Abstract
The utility model discloses a silicon microphone comprising an external encapsulating structure consisting of an outer shell and a circuit board, wherein an MEMS (micro-electromechanical system) chip is installed at the surface of the circuit board in the encapsulating structure, and a sound aperture used for receiving external sound signals is arranged on a part of the circuit board corresponding to the MEMS chip; and the end of the sound aperture positioned in the encapsulating structure is covered by an air shielding device the side surface of which is opened and the top is provided with a shielding surface, and the top of the air shielding device faces to the MEMS chip. With the adoption of the design, when entering the silicon microphone, external air streams are blocked by the top of the air shielding device and then forced to flow inside through the lateral part so that the MEMS chip can not be directly impacted.
Description
Technical field
The utility model relates to a kind of silicon microphone, the silicon microphone structure that especially relates to a kind of good reliability, can be good at avoiding outer gas stream to impact.
Background technology
In recent years, along with electronic product volumes such as mobile phone, notebook computer constantly reduce, performance requirement is more and more higher, also require the volume of supporting electronic component constantly to reduce, performance and consistency improve.Under this background, also released a lot of novel products as the microphone products field of one of strength member, utilize the semiconductor fabrication process technology and the silicon microphone realizing producing in batches is wherein representative products.As the operation principle of this product, the comparison detailed introduction has been arranged in U.S. Pat 6781231.As accompanying drawing 1 is a kind of silicon microphone product profile of routine, the outer enclosure that comprises a square wiring board 1 and square metal cap 2 formation silicon microphones, metal cap 2 is provided with the sound hole 11 that is used to receive the external sound signal, on the inner wiring board 1 of encapsulation, be separately installed with IC chip 3 and MEMS chip 4, wherein MEMS chip 4 is made for utilizing MEMS (MEMS (micro electro mechanical system)) technology, the outside sound signal transition can be become the signal of telecommunication, IC chip 3 on the electrode of MEMS chip 4 and the wiring board 1 is electrically connected, and IC chip processed electrical signals is transferred to the silicon microphone outside the most at last, and is connected to external circuit.The inside of MEMS chip 4 is cavity structure, and its summit portion 41 is provided with the plane-parallel capacitor (its specific design does not influence the purport of this patent, does not have detail display) of vibrating diaphragm and pole plate formation, and lateral parts 42 is used to support summit portion 41 and forms the operatic tunes.
Yet, because the operation principle of silicon microphone has required its structure must have the sound hole of connection space outerpace, in the use and test process of silicon microphone, be arranged at the product structure (being referred to as " Bottom structure " in the industry) of MEMS chip below at this sound hole, sometimes have stronger outside air gas shock, and the vibrating diaphragm on the destruction MEMS chip summit portion 41, a little less than the vibrating diaphragm of MEMS chip is highly brittle, be easy to destroyed, finally cause the performance shortcoming even the actual effect of silicon microphone product, when carrying out fall-down test, will run into this situation such as silicon microphone.
Also there is design to attempt to change this situation, the silicon microphone structure of accompanying drawing 2 for example, similar with the product structure in the accompanying drawing 1, but shape change with sound hole 11, the sound channel of a level is set by the inside at wiring board 1, thereby make the inside and outside sound hole 11 of connection silicon microphone become a bending channel, this design can reduce the impact of bigger air-flow to the MEMS chip to a certain extent, but still have two shortcomings, one is to remain by the air-flow that this sound hole enters to directly act on MEMS chip below, and its effect that weakens stream pressure is limited; Another is that this needs complicated wiring board design, undoubtedly will improve the height of production cost and product, and such sound hole is very easy to produce obstruction, finally causes voice signal to enter, and reliability of products is relatively poor.
Thus, need a kind of cost savings of design, size rationally, good reliability, and the air-flow that can be good at avoiding bigger product structure that silicon microphone is damaged.
The utility model content
Technical problem to be solved in the utility model provides a kind of silicon microphone, the destruction that can well avoid bigger air-flow that silicon microphone is caused, and cost savings, size rationally, good reliability.
For solving the problems of the technologies described above, the technical solution of the utility model is: silicon microphone, comprise the outer enclosure structure that shell and wiring board constitute, on the described PCB surface of described encapsulating structure inside the MEMS chip is installed, the position corresponding with described MEMS chip is provided with the sound hole that is used to receive the external sound signal on the described wiring board, and: the described sound bore ends that is positioned at described encapsulating structure inside is coated with the abat-vent that side perforate and top are provided with blocking surface, and the top of described abat-vent is towards described MEMS chip.
As optimized technical scheme, described abat-vent is arranged in the cavity of described wiring board and the formation of described MEMS chip.
As optimized technical scheme, described abat-vent is arranged on the surface of described wiring board, and described MEMS chip is arranged on the peripheral planar of described abat-vent.
As optimized technical scheme, described abat-vent is that the middle part is provided with pertusate Metal Flake structure, the arch blocking surface of the described blocking surface at top for going out from described hole.
As optimized technical scheme, described abat-vent is that the middle part is provided with pertusate Metal Flake structure, the inclination blocking surface of the described blocking surface at top for going out from described hole.
As optimized technical scheme, described abat-vent is the Metal Flake structure of arch, and the arch top of described abat-vent is described blocking surface.
Owing to adopted technique scheme, silicon microphone, comprise the outer enclosure structure that shell and wiring board constitute, on the described PCB surface of described encapsulating structure inside the MEMS chip is installed, the position corresponding with described MEMS chip is provided with the sound hole that is used to receive the external sound signal on the described wiring board, and: the described sound bore ends that is positioned at described encapsulating structure inside is coated with the abat-vent that side perforate and top are provided with blocking surface, and the top of described abat-vent is towards described MEMS chip; The beneficial effects of the utility model are: by this design, can enter from the side so that extraneous air-flow when entering silicon microphone, is subjected to stopping of abat-vent top, can directly not impact the MEMS chip.
Description of drawings
Fig. 1 is the structural representation of background technology one;
Fig. 2 is the structural representation of background technology two;
Fig. 3 is the structural representation of the utility model embodiment one;
Fig. 4 is the vertical view of the utility model embodiment one abat-vent;
Fig. 5 is the end view of the utility model embodiment one abat-vent;
Fig. 6 is the structural representation of the utility model embodiment two;
Fig. 7 is the schematic perspective view of the utility model embodiment two abat-vents;
Fig. 8 is the structural representation of the utility model embodiment three;
Fig. 9 is the vertical view of the utility model embodiment three abat-vents;
Figure 10 is the end view of the utility model embodiment three abat-vents.
Embodiment
Embodiment one:
As shown in Figure 3, silicon microphone comprises the outer enclosure structure of a square wiring board 1 and square shell 2 formation silicon microphones, wiring board 1 is provided with the sound hole 11 that is used to receive the external sound signal, on the wiring board 1 of encapsulating structure inside, be separately installed with IC chip 3 and MEMS chip 4, wherein MEMS chip 4 is made for utilizing MEMS (MEMS (micro electro mechanical system)) technology, the outside sound signal transition can be become the signal of telecommunication, IC chip 3 on the electrode of MEMS chip 4 and the wiring board 1 is electrically connected, and IC chip 3 processed electrical signals are transferred to the silicon microphone outside the most at last, and be connected to external circuit.
In the present embodiment, in conjunction with Fig. 3, Fig. 4 and shown in Figure 5, sound hole 11 is arranged on the pairing wiring board 1 in MEMS chip 4 installation sites, and the end that is positioned at the described sound hole 11 of described encapsulating structure inside is coated with the side perforate, and the top is provided with the abat-vent 5 of blocking surface, and the top of abat-vent 5 is towards described MEMS chip 4.By this design, can enter and impact the lateral parts 42 of MEMS chip 4 from the side so that extraneous air-flow when entering silicon microphone, is subjected to stopping of abat-vent 5 tops, can directly not impact the summit portion 41 of MEMS chip 4, the destruction of avoiding causing vibrating diaphragm.Thereby can protect MEMS chip 4 effectively, avoid silicon microphone in the process of using or testing, to damage.
In the present embodiment, abat-vent 5 is provided with the Metal Flake structure of hole 52 for the middle part, the arch blocking surface of blocking surface 51 for going out at top from hole 52, thereby extraneous air-flow can be by sound hole 11, pass through from the side of arch blocking surface 51, air-flow is through impacting the position, side of MEMS chip 4 inside after weakening.This technology of going out domes on sheet metal is very simple, with low cost.Certainly, arch blocking surface 51 can be an arcuate structure as shown in Figure 5, also can be a planar structure.
In the present embodiment, abat-vent 5 is arranged in the cavity of wiring board 1 and 4 formation of MEMS chip, can adopt the mode of pasting or welding to be arranged on the wiring board 1, can't increase the inside dimension of silicon microphone.
This product structure can avoid bigger air-flow that silicon microphone is damaged effectively, and cost savings, size rationally, good reliability.
Embodiment two:
As shown in Figure 6 and Figure 7, difference with respect to embodiment one present embodiment is that the abat-vent 5 of silicon microphone is arranged on the surface of described wiring board 1, the mode that generally can adopt welding or cohere is installed, MEMS chip 4 is arranged on the peripheral planar of abat-vent 5, the general mode that also can adopt welding or cohere is installed, and abat-vent 5 is provided with the Metal Flake structure of hole 52 for the middle part, the inclination blocking surface of blocking surface 51 for going out from hole 52 at top, air-flow can pass through along the inclination blocking surface.By this design; can be so that extraneous air-flow be when entering silicon microphone; be subjected to stopping of abat-vent 5 top blocking surfaces 51; along the lateral parts 42 of inclination blocking surface 51 by impacting MEMS chip 4; can directly not impact the summit portion 41 of MEMS chip 4; avoid causing the destruction of vibrating diaphragm, thereby can protect MEMS chip 4 effectively, avoid silicon microphone in the process of using or testing, to damage.And this technology that designs and produces is simple, and effect is obvious, also can not impact entering of voice signal.
Embodiment three:
As Fig. 8,9 and shown in Figure 10, with respect to embodiment one, the difference of present embodiment is that the abat-vent 5 of silicon microphone is the Metal Flake structure of arch, and the arch top of abat-vent 5 is an air-flow blocking surface 51, and air-flow can pass through along the below of arch top blocking surface 51.By this design; can be so that extraneous air-flow be when entering silicon microphone; be subjected to stopping of arch top blocking surface 51; impact the lateral parts 42 of MEMS chip 4 along the slit, both sides that the top of arch and wiring board 1 form; can directly not impact the destruction that the pre-face portion 41 of MEMS chip 4 causes vibrating diaphragm; thereby can protect MEMS chip 4 effectively, avoid silicon microphone in the process of using or testing, to damage.And this technology that designs and produces is simple, and effect is obvious, also can not impact entering of voice signal.
In three cited embodiment, all adopted square shell and wiring board, shell is the metal groove form casing of one.In fact, shell and wiring board also can be other shapes, and shell also can adopt wiring board material, plastic material etc. to make, and shell also can be that a framework and a cover combination form; Wiring board in this patent can the preferred resin material as base material.In a word, in the various choice of technology modes under this novel silicon microphone design purport prerequisite all within the protection at this patent.In view of the suitable adjustment of MEMS chip to not influence of purport of the present invention, the MEMS chip in the pattern only adopts simple pattern to represent.
Claims (6)
1. silicon microphone, comprise the outer enclosure structure that shell and wiring board constitute, on the described PCB surface of described encapsulating structure inside the MEMS chip is installed, the position corresponding with described MEMS chip is provided with the sound hole that is used to receive the external sound signal on the described wiring board, it is characterized in that: the described sound bore ends that is positioned at described encapsulating structure inside is coated with the abat-vent that side perforate and top are provided with blocking surface, and the top of described abat-vent is towards described MEMS chip.
2. silicon microphone as claimed in claim 1 is characterized in that: described abat-vent is arranged in the cavity of described wiring board and the formation of described MEMS chip.
3. silicon microphone as claimed in claim 1 is characterized in that: described abat-vent is arranged on the surface of described wiring board, and described MEMS chip is arranged on the peripheral planar of described abat-vent.
4. as the described silicon microphone of the arbitrary claim of claim 1 to 3, it is characterized in that: described abat-vent is that the middle part is provided with pertusate Metal Flake structure, the arch blocking surface of the described blocking surface at top for going out from described hole.
5. as the described silicon microphone of the arbitrary claim of claim 1 to 3, it is characterized in that: described abat-vent is that the middle part is provided with pertusate Metal Flake structure, the inclination blocking surface of the described blocking surface at top for going out from described hole.
6. silicon microphone as claimed in claim 1 or 2 is characterized in that: described abat-vent is the Metal Flake structure of arch, and the arch top of described abat-vent is described blocking surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202742198U CN201854425U (en) | 2010-07-25 | 2010-07-25 | Silicon microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202742198U CN201854425U (en) | 2010-07-25 | 2010-07-25 | Silicon microphone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201854425U true CN201854425U (en) | 2011-06-01 |
Family
ID=44096803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202742198U Expired - Lifetime CN201854425U (en) | 2010-07-25 | 2010-07-25 | Silicon microphone |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201854425U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103281660A (en) * | 2013-05-06 | 2013-09-04 | 山东共达电声股份有限公司 | Double-bottom gasket and MEMS (Micro Electro Mechanical System) microphone |
| GB2506174A (en) * | 2012-09-24 | 2014-03-26 | Wolfson Microelectronics Plc | Protecting a MEMS device from excess pressure and shock |
| GB2533410A (en) * | 2014-12-19 | 2016-06-22 | Cirrus Logic Int Semiconductor Ltd | MEMS devices and processes |
| CN110113687A (en) * | 2019-04-12 | 2019-08-09 | 苏州敏芯微电子技术股份有限公司 | Silicon microphone |
| CN110574395A (en) * | 2017-05-05 | 2019-12-13 | 歌尔股份有限公司 | MEMS microphone |
-
2010
- 2010-07-25 CN CN2010202742198U patent/CN201854425U/en not_active Expired - Lifetime
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9487389B2 (en) | 2012-09-24 | 2016-11-08 | Cirrus Logic, Inc. | MEMS device and process |
| GB2506211A (en) * | 2012-09-24 | 2014-03-26 | Wolfson Microelectronics Plc | Protecting a MEMS device from excess pressure and shock |
| GB2506174A (en) * | 2012-09-24 | 2014-03-26 | Wolfson Microelectronics Plc | Protecting a MEMS device from excess pressure and shock |
| GB2506979A (en) * | 2012-09-24 | 2014-04-16 | Wolfson Microelectronics Plc | MEMS device with increased robustness and resilience to acoustic shock |
| US8737171B2 (en) | 2012-09-24 | 2014-05-27 | Wolfson Microelectronics Plc | MEMS device and process |
| US8987844B2 (en) | 2012-09-24 | 2015-03-24 | Cirrus Logic International (Uk) Limited | MEMS device and process |
| GB2506979B (en) * | 2012-09-24 | 2015-07-29 | Wolfson Microelectronics Plc | MEMS device and process |
| US10375481B2 (en) | 2012-09-24 | 2019-08-06 | Cirrus Logic, Inc. | MEMS device and process |
| US9206031B2 (en) | 2012-09-24 | 2015-12-08 | Cirrus Logic International Semiconductor Ltd. | MEMS device and process |
| US9637374B2 (en) | 2012-09-24 | 2017-05-02 | Cirrus Logic, Inc. | MEMS device and process |
| US9756429B2 (en) | 2012-09-24 | 2017-09-05 | Cirrus Logic, Inc. | MEMS device and process |
| US10560784B2 (en) | 2012-09-24 | 2020-02-11 | Cirrus Logic, Inc. | MEMS device and process |
| CN103281660B (en) * | 2013-05-06 | 2015-11-18 | 山东共达电声股份有限公司 | A kind of Double bottom pad and a kind of MEMS microphone |
| CN103281660A (en) * | 2013-05-06 | 2013-09-04 | 山东共达电声股份有限公司 | Double-bottom gasket and MEMS (Micro Electro Mechanical System) microphone |
| US10301174B2 (en) | 2014-12-19 | 2019-05-28 | Cirrus Logic, Inc. | MEMS device and processes |
| US10118817B2 (en) | 2014-12-19 | 2018-11-06 | Cirrus Logic, Inc. | MEMS devices with membrane having venting flaps hingedly attached to one another |
| US9695038B2 (en) | 2014-12-19 | 2017-07-04 | Cirrus Logic International Semiconductor Ltd. | MEMS devices with membrane having venting flaps hingedly attached to one another |
| GB2533410A (en) * | 2014-12-19 | 2016-06-22 | Cirrus Logic Int Semiconductor Ltd | MEMS devices and processes |
| GB2533410B (en) * | 2014-12-19 | 2017-03-01 | Cirrus Logic Int Semiconductor Ltd | MEMS devices and processes |
| CN110574395A (en) * | 2017-05-05 | 2019-12-13 | 歌尔股份有限公司 | MEMS microphone |
| US11109162B2 (en) | 2017-05-05 | 2021-08-31 | Goertek Inc. | MEMS microphone |
| CN110574395B (en) * | 2017-05-05 | 2020-11-13 | 潍坊歌尔微电子有限公司 | MEMS microphone |
| CN110113687A (en) * | 2019-04-12 | 2019-08-09 | 苏州敏芯微电子技术股份有限公司 | Silicon microphone |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20200610 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
|
| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110601 |
|
| CX01 | Expiry of patent term |