CN201740384U - High-temperature vacuum baking oven - Google Patents
High-temperature vacuum baking oven Download PDFInfo
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- CN201740384U CN201740384U CN2010201687795U CN201020168779U CN201740384U CN 201740384 U CN201740384 U CN 201740384U CN 2010201687795 U CN2010201687795 U CN 2010201687795U CN 201020168779 U CN201020168779 U CN 201020168779U CN 201740384 U CN201740384 U CN 201740384U
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Abstract
The utility model provides a high-temperature vacuum baking oven, which is characterized by the inclusion of an inner chamber and an outer chamber, wherein the inner chamber surrounded by the outer chamber comprises an inner cylinder, a plurality of heating rods, an objective table and a thermocouple for acquiring high temperature ranging from 1200 to 1600 DEG C; and the outer chamber comprises an outer cylinder, a heat exchanger, an air inlet and an air outlet, an air cylinder and a vacuometer, the stainless-steel outer cylinder with a hollow interlayer plays a vacuum sealing and water-cooling role on the entire chamber, and the heat exchanger at the rear end of the outer chamber accelerates circulation of cooled nitrogen gas inside the outer chamber, and the cooled nitrogen gas is fed into the outer chamber during temperature reduction. The high-temperature vacuum baking oven has the advantages of high baking temperature, rapid temperature rising and reducing, and capability of overcoming the shortcomings in the conventional MOCVD (Metal Organic Chemical Vapor Deposition) extensional baking ovens that the original substrate trays easily lead to time waste, poor baking and pollution to the system in the in-situ baking; thereby being applicable to the baking of a plurality of substrate trays with large sizes and improving production efficiency and finished product ratio of the extensional sheet materials.
Description
Technical field
The utility model relates to a kind of oven, is meant a kind of high-temperature vacuum oven especially.
Background technology
Carry out in the production process of epitaxial wafer material at common metal-organic chemical vapor deposition equipment (MOCVD) epitaxial furnace that utilizes, before each the production, need under high vacuum, carry out the high-temperature baking cleaning by the graphite substrate pallet to the carrying substrate base, be deposited on the epitaxial material on the substrate pallet and the impurity of contamination to remove the last time production process, otherwise can this epitaxial material growth quality be exerted an influence.If in the reative cell of MOCVD epitaxial furnace, carry out original position baking in the stove, waste 1 to 4 hour production time to I haven't seen you for ages at every turn, and the accessory substance that produces of bake process and impurity remains in the reative cell and also can exert an influence to this epitaxial wafer material growth quality, and then causes the lifting of product defect rate.Ideal situation is that the high-temperature vacuum baking of carrying out the substrate pallet outside the reative cell of MOCVD epitaxial furnace is cleaned.According to measuring and calculating: for the MOCVD epitaxial furnace of producing 4 to 5 stove GaN base LED epitaxial wafer materials every day, as carry out the outer substrate pallet of MOCVD epitaxial furnace and toast, then can produce 1 to 2 stove every day, production efficiency will improve 20% to 30% more, but also can guarantee the yield rate of product.As seen adopt the outer baking of stove of MOCVD epitaxial furnace substrate pallet to have very important significance for the production production capacity and the efficient that improve the epitaxial wafer material.Epitaxial wafer manufacture of materials producer both domestic and external and scientific research institution have begun to focus on the oven that use is set up in the epitaxial wafer manufacture of materials process and have carried out the high-temperature baking cleaning of substrate pallet.
The oven of substrate pallet baking that is used for the MOCVD epitaxial furnace of epitaxial wafer manufacture of materials at present is to transform on the basis of former vacuum drying oven to form mostly, and have following shortcoming: (1) warming and cooling rate is slow.High temperature is easy to more than 1000 ℃ as being raised to from room temperature, but it is just very consuming time to drop to room temperature from high temperature more than 1000 ℃; (2) be difficult to obtain high temperature more than 1200 ℃, stoving time is long and not thorough; (3) the oven chamber is little, can not toast the large-sized substrate pallet, and existing high-temperature baking baking oven maximum only can be toasted the substrate pallet that is used for 21 2 inches epitaxial wafer manufacture of materials; (4) base vacuum is poor.Baking the accessory substance and the impurity that come can not discharge timely also and can produce pollution again to the substrate pallet.
The utility model content
The purpose of this utility model is to provide a kind of new high-temperature vacuum oven at adopting original position baking substrate bracket in the MOCVD epitaxial furnace stove to take inventory the technical deficiency that exists at the problem that expends production time and contaminated system and existing high-temperature baking baking oven in the epitaxial wafer manufacture of materials.
According to embodiment of the present utility model, the high-temperature vacuum oven constitutes by inner cavity chamber with around the outer chamber of inner cavity chamber.Inner cavity chamber comprises inner core, heating rod, objective table, thermocouple; Outer chamber comprises urceolus, heat exchanger, air inlet/outlet, cylinder, vacuum meter.
The inner core of described high-temperature vacuum oven comprises inner core protecgulum, inner core bonnet and inner core main body, and inner core main body and inner core protecgulum include outer wall of being made by iron, molybdenum or graphite and the inwall of being made by the sticking heat-insulation layer material of thick graphite; The inner core bonnet is made by the sticking insulation material of ventilative netted graphite.
Heating rod in the described high-temperature vacuum oven inner core is the graphite resistance heating rod, and it is uniformly arranged and fixed around the inner core inwall by insulating ceramics spare is parallel; Graphite resistance heating rod in the inner core divides 3 groups, and the graphite resistance heating rod in every group is cascaded mutually, and is in parallel between group and the group, and passes through 4 heating rod extraction electrodes and body of heater three-phase alternating-current supply outward is connected; The number of graphite resistance heating rod, thickness, length can be determined according to body of heater maximum heating temperature and body of heater size in the inner core.
The urceolus of described high-temperature vacuum oven is made of the stainless steel material with hollow sandwich and comprises urceolus protecgulum and urceolus bonnet, and hollow sandwich can lead to cooling circulating water, to play vacuum seal and the water-cooled cooling effect to whole body of heater.
Described heat exchanger is positioned at the outer chamber rear end, comprises the high temperature resistant blower fan of being made by iron, molybdenum or graphite material, is used for quickening refrigerating gas nitrogen that temperature-fall period feeds in the circulation of interior outer chamber and play air-cooled effect.The blower fan of described heat exchanger is to adopt the work of magnetic fluid bearing driven rotary, to guarantee that blower fan still keeps good vacuum seal in the outer chamber in the rotary work process.
Described cylinder is positioned on the urceolus protecgulum, the drive link of cylinder is that iron, molybdenum or graphite are made, and adopt vacuum seal between bellows and the urceolus protecgulum, still keep good vacuum seal with outer chamber in guaranteeing in the drive link drive inner core protecgulum motion process, intensification and bake process bellows stretching drive link advance and close the inner core protecgulum, and temperature-fall period bellows contract drive link retreats opens the inner core protecgulum.
Described high-temperature vacuum oven can be used for the baking of the substrate pallet of metal-organic chemical vapor deposition equipment epitaxial furnace, molecule beam epitaxial furnace, chemical vapor depsotition equipment, magnetron sputtering apparatus and vacuum evaporation equipment.
Described high-temperature vacuum oven maximum heating temperature is 1600 ℃, stabilized operating temperature 1200-1600 ℃, can be used for the high-temperature vacuum baking of graphite substrate pallet, silicon carbide substrates pallet.
Described high-temperature vacuum oven is the high vacuum extraction of carrying out inside and outside chamber with lobe pump or molecular pump vavuum pump unit.
Description of drawings
Fig. 1 is the cross-sectional view of overlooking according to the high-temperature vacuum oven of the utility model embodiment;
Fig. 2 is the side-looking cross-sectional view of the high-temperature vacuum oven of the utility model embodiment.
The main element symbol description
| 10: inner cavity chamber | 111: inner tank theca |
| 112: the inner core inwall | 113: the inner core protecgulum |
| 114: the inner core bonnet | 121: heating rod |
| 122: the heating rod extraction electrode | 13: objective table |
| 14: thermocouple | 20: outer chamber |
| 211: the urceolus shell | 212: the urceolus protecgulum |
| 213: the urceolus bonnet | 22: heat exchanger |
| 23: cylinder | 24: the gas outlet |
| 25: air inlet | 26: vacuum meter |
The specific embodiment
Elaborate the utility model preferred embodiment below in conjunction with accompanying drawing.
Clean as the high-temperature vacuum baking of the graphite substrate pallet of 150mm to 500mm for satisfying the diameter that the MOCVD epitaxial furnace uses, the structural design of oven is as follows:
(1) structural design of inner cavity chamber 10
(1) inner core is made of exotic material.Wherein, the outer wall of inner tank theca 111 and inner core protecgulum 113 is that 3mm is to the thick refractory metal iron material of 5mm; Inner core inwall 112 and inner core protecgulum 113 inwalls are that 5cm glues the heat-insulation layer material to the thick graphite of 10cm, the sticking flexible material that is meant a kind of by the graphite fibre braiding of so-called graphite; Inner core bonnet 114 glues the heat-insulation layer material for 2cm to the thick netted ventilative graphite of 5cm, with the passage that guarantees that intensification and bake process have gas communication between the interior outer chamber in good thermal insulation property and assurance baking and the temperature-fall period.The inner core internal diameter is 80cm, and the inner core tube length is 85cm, can guarantee to toast the graphite substrate pallet of diameter 150～500mm.
(2) heating rod 121 adopts the graphite resistance heating rod.By insulating ceramics spare non-contacting parallel evenly be arranged in inner core inwall 112 around.In order to guarantee that inner cavity chamber is rapidly heated and reaches 1200～1600 ℃ high temperature, adopting 18 long 60cm of rod is the graphite resistance heating rod 121 of 1cm to 3cm to 80cm, diameter.These 18 graphite resistance heating rods 121 are divided into 3 groups, and 6 graphite resistance heating rods 121 in every group are cascaded mutually, and are in parallel between group and the group, and the three-phase alternating-current supply that passes through outside 4 heating rod extraction electrodes 122 and the body of heater is connected.The number of the graphite resistance heating rod in the inner core, thickness, length can be determined according to body of heater maximum heating temperature and body of heater size.
(3) the 13 usefulness graphite materials of the objective table in the inner core process, and are used to put the graphite frame of splendid attire substrate pallet.
(4) plug-in mounting one thermocouple 14 on the inner core is used to monitor the temperature of inner cavity chamber.
(2) structural design of outer chamber 20
(1) urceolus mainly is made of stainless steel material.Wherein, urceolus shell 211 comprises protecgulum 212 and bonnet 213, constitute to the thick double-layer stainless steel material of 30mm by wall thickness 10mm, the thick 10mm of hollow sandwich is to 20mm, whole chamber is played fine vacuum seal, the logical cooling circulating water of hollow sandwich also can play the water-cooled effect to whole body of heater, and the urceolus internal diameter is 120cm, and tube length is 120cm.
(2) heat exchanger 22 is a high temperature resistant blower fan that adopts magnetic fluid bearing to drive.The fan of this blower fan can select for use the exotic material of iron, molybdenum, graphite to make, but is not limited thereto, and with the circulation of the acceleration cooling liquid nitrogen that temperature-fall period was fed in interior outer chamber, and then plays air-cooled effect.Liquid nitrogen gas used herein is meant the nitrogen that goes out from liquid nitrogen vaporization, and it has lower temperature, thereby can be used as refrigerating gas.
(3) cylinder 23 is installed on the urceolus protecgulum 212, and it is positioned at the drive link that outer chamber 20 is connected with inner core protecgulum 113 and can selects for use the exotic material of iron, molybdenum, graphite to make, but is not limited thereto.By the unlatching of the contraction of the bellows in cylinder control inner core protecgulum, heat up and bake process in drive link advance and close inner core protecgulum 113, drive link shrinks unlatching inner core protecgulum 113 in the temperature-fall period.
(4) gas outlet 24 is connected with the vavuum pump unit.Be used to take out the vacuum of oven chamber and discharge the refrigerating gas liquid nitrogen gas of the atmosphere of toasting out and temperature-fall period feeding.
(5) air inlet 25 is connected with the liquid nitrogen air pipe that is equipped with, and is used for feeding refrigerating gas liquid nitrogen gas at temperature-fall period, by the air-cooled acceleration temperature-fall period of heat exchanger 22.
(6) vacuum meter 26 is installed on the urceolus, outer chamber vacuum and pressure in being used to monitor.
(3) other configurations
(1) vacuum arrangement: adopt lobe pump unit or molecular pump unit.
The lobe pump unit comprises that 1 pumping speed is the lobe pump of 150L/S, and 1 pumping speed is the oil-sealed rotary pump of 8L/S, 1 cover easamatic power brake plate valve, 2 vacuum ripple pipes, 2 magnetic valves; The molecular pump unit comprises that 1 pumping speed is the molecular pump of 600L/S, and 1 pumping speed is the oil-sealed rotary pump of 8L/S, 1 cover easamatic power brake plate valve, 2 vacuum ripple pipes, 2 magnetic valves.
(2) gas configuration: be equipped with the liquid nitrogen air pipe, enter the flow of the refrigerating gas liquid nitrogen gas of air inlet 25 by pressure regulator valve control.
Embodiment 1
Be equipped with the job step of the high-temperature vacuum oven of lobe pump unit:
(1) opens urceolus protecgulum 212 and inner core protecgulum 113, graphite substrate pallet to be baked is placed on the objective table 13 in the inner core, close urceolus protecgulum 212 then.
(2) vacuum of high-temperature baking furnace chamber chamber 10 and outer chamber 20 is taken out by elder generation with oil-sealed rotary pump, when reaching 1000Pa, opens vacuum pressure lobe pump, fast the vacuum with inner cavity chamber 10 and outer chamber 20 is extracted into the vacuum that pressure is not more than 10Pa, and the drive link by the cylinder on the urceolus protecgulum 212 23 compresses inner core protecgulum 113 it is closed.
(3) logical cooling circulating water in the hollow sandwich of the stainless steel casing 211 of urceolus, to 121 energisings of graphite resistance heating rod, the regulation and control heating current is warming up to 1200～1600 ℃ with the temperature of inner cavity chamber 10 by heating rod extraction electrode 122.
(4) high-temperature vacuum baking graphite substrate pallet began cooling with graphite resistor rod 121 outages, and opens inner core protecgulum 113 by the drive link of urceolus protecgulum 212 cylinders 23 after 1～2 hour.
(5) close lobe pump, by air inlet 25 logical refrigerating gas nitrogen in outer chamber 20, the pressure that feeds gas is no more than 1 atmospheric pressure, opens the blower fan of heat exchanger 22.
(6) temperature drops to below 50 ℃ in the high-temperature vacuum oven, closes the heat exchanger blower fan and shuts down the tool vavuum pump, and oven outer chamber 20 pressure rise to 1 atmospheric pressure and close refrigerating gas liquid nitrogen gas.
(7) open urceolus protecgulum 212 and inner core protecgulum 113, the graphite substrate pallet that the high-temperature vacuum baking is cleaned up takes out, and puts into the MOCVD epitaxial furnace and be used for the growth of epitaxial wafer material.
Embodiment 2
Be equipped with the job step of the high-temperature vacuum oven of molecular pump unit:
(1) opens urceolus protecgulum 212 and inner core protecgulum 113, graphite substrate pallet to be baked is placed on the objective table 13 in the inner core, close urceolus protecgulum 212 then.
(2) take out earlier the vacuum of high-temperature baking furnace chamber chamber 10 and outer chamber 20, open molecular pump when vacuum pressure reaches 1～10Pa, fast the vacuum of inner cavity chamber 10 and outer chamber 20 is extracted into pressure and is not more than 1 * 10 with oil-sealed rotary pump
-3The ultrahigh vacuum of Pa, and the drive link by the cylinder on the urceolus protecgulum 212 23 compresses inner core protecgulum 113 it is closed.
(3) logical cooling circulating water in the hollow sandwich of the stainless steel casing 211 of urceolus, to 121 energisings of graphite resistance heating rod, the regulation and control heating current is warming up to 1200～1600 ℃ with the temperature of inner cavity chamber 10 by heating rod extraction electrode 122.
(4) high-temperature vacuum baking graphite substrate pallet began cooling with graphite resistor rod 121 outages, and opens inner core protecgulum 113 by the drive link of urceolus protecgulum 212 cylinders 23 after 1～2 hour.
(5) closure molecule pump, the blower fan of unlatching heat exchanger 22.By air inlet 25 logical refrigerating gas liquid nitrogen gas in outer chamber 20, the pressure that feeds gas is no more than 1 atmospheric pressure.
(6) temperature drops to below 50 ℃ in the high-temperature vacuum oven, closes the heat exchanger blower fan and shuts down the tool vavuum pump, and oven outer chamber 20 pressure rise to 1 atmospheric pressure and close refrigerating gas liquid nitrogen gas.
(7) open urceolus protecgulum 212 and inner core protecgulum 113, the graphite substrate pallet that the high-temperature vacuum baking is cleaned up takes out, and puts into the MOCVD epitaxial furnace and be used for the growth of epitaxial wafer material.
High-temperature vacuum oven described in the utility model is compared common high-temperature baking baking oven, adopts inside and outside chamber design.The structure of inner cavity chamber not only has good heat preservation property but also be beneficial to the high temperature of quick acquisition up to 1200-1600 ℃, and baking temperature height, baking are thoroughly; The structure of outer chamber can not only play good vacuum seal, and air-cooled combination the in stainless steel casing water-cooled and the outer chamber also is beneficial to fast cooling; In addition, the pumping high vacuum pump assembly that is equipped with then is beneficial to big volume oven chamber and obtains higher base vacuum degree fast, and guarantees that the impurity atmosphere that toasts is out extracted fast.According to high-temperature vacuum oven dependable performance of the present utility model, high efficiency, and can be used in the more high-temperature vacuum baking of large scale and a plurality of substrate pallets and clean.Both effectively overcome with MOCVD epitaxial furnace reative cell original position baking substrate bracket take inventory consuming time, baking thoroughly do not reach the problem of contaminated system, also remedied the technical deficiency of existing high-temperature baking baking oven, improved epitaxial wafer manufacture of materials efficient and yield rate.
Though more than the graphite substrate pallet that uses with the MOCVD epitaxial furnace as example the utility model has been described, but those skilled in the art are scrutable be, be not limited to this according to high-temperature vacuum oven of the present utility model, but can toast any object that needs high temperature, high vacuum and avoid contaminating impurity.Should be appreciated that the structure of high-temperature vacuum oven described above and method of operating thereof only are instantiation, those skilled in the art can make change according to design needs and other factors under instruction of the present utility model.
Above embodiment does not just limit its protection domain to exemplary illustration of the present utility model.Those skilled in the art can carry out the part to it and change, and are not breaking away under this spiritual essence prerequisite, all belong to originally being equal to replacement, therefore all within protection domain of the present utility model.
Claims (9)
1. high-temperature vacuum oven is characterized in that: constitute by inner cavity chamber with around the outer chamber of inner cavity chamber.
2. high-temperature vacuum oven according to claim 1 is characterized in that: described inner cavity chamber comprises inner core, heating rod, objective table and thermocouple, and described outer chamber comprises urceolus, heat exchanger, air inlet/outlet, cylinder and vacuum meter.
3. high-temperature vacuum oven according to claim 2, it is characterized in that: described inner core comprises inner core protecgulum, inner core bonnet and inner core main body, inner core main body and inner core protecgulum include outer wall of being made by iron, molybdenum or graphite and the inwall of being made by the sticking heat-insulation layer material of graphite, and the inner core bonnet is made by the sticking insulation material of ventilative netted graphite.
4. high-temperature vacuum oven according to claim 2 is characterized in that: the heating rod in the described inner core is the graphite resistance heating rod, and it is uniformly arranged and fixed around the inner core inwall by insulating ceramics spare is parallel; Described graphite resistance heating rod divides 3 groups, and the graphite resistance heating rod in every group is cascaded mutually, and is in parallel between group and the group, and passes through 4 heating rod extraction electrodes and body of heater three-phase alternating-current supply outward is connected.
5. high-temperature vacuum oven according to claim 2 is characterized in that: described urceolus is made of the stainless steel material with hollow sandwich, and comprises urceolus protecgulum and urceolus bonnet, and hollow sandwich can lead to cooling circulating water.
6. high-temperature vacuum oven according to claim 2 is characterized in that: described heat exchanger comprises the high temperature resistant blower fan of being made by iron, molybdenum or graphite material.
7. high-temperature vacuum oven according to claim 6 is characterized in that: described high temperature resistant blower fan is to adopt the work of magnetic fluid bearing driven rotary.
8. high-temperature vacuum oven according to claim 2 is characterized in that: described cylinder is positioned on the urceolus protecgulum, and the drive link of described cylinder is made by iron, molybdenum or graphite, and adopts vacuum seal between bellows and the urceolus protecgulum.
9. high-temperature vacuum oven according to claim 1 is characterized in that: this high-temperature vacuum oven maximum heating temperature is 1600 ℃, stabilized operating temperature 1200-1600 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201687795U CN201740384U (en) | 2010-03-30 | 2010-03-30 | High-temperature vacuum baking oven |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201687795U CN201740384U (en) | 2010-03-30 | 2010-03-30 | High-temperature vacuum baking oven |
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| CN201740384U true CN201740384U (en) | 2011-02-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010201687795U Expired - Fee Related CN201740384U (en) | 2010-03-30 | 2010-03-30 | High-temperature vacuum baking oven |
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| CN (1) | CN201740384U (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102206809A (en) * | 2010-03-30 | 2011-10-05 | 杭州海鲸光电科技有限公司 | High temperature vacuum baking furnace and operation method thereof |
| CN102764745A (en) * | 2011-05-04 | 2012-11-07 | 青岛赛瑞达电子科技有限公司 | Baking furnace device of graphite disk for cleaning MOCVD (metal-organic chemical vapor deposition) device |
| CN103033045A (en) * | 2011-09-28 | 2013-04-10 | 喏莫里克株式会社 | Graphite heater furnace |
| CN104925793A (en) * | 2015-06-11 | 2015-09-23 | 湘能华磊光电股份有限公司 | Method for removing GaN-based compounds on surface of graphite disc |
| CN105318713A (en) * | 2014-08-01 | 2016-02-10 | 天津市维之丰科技有限公司 | Rotary porcelain firing vacuum furnace |
| CN108895830A (en) * | 2018-07-11 | 2018-11-27 | 昆山金美创机械有限公司 | One kind being suitable for LED semiconductor vacuum oven |
| CN111940418A (en) * | 2020-06-19 | 2020-11-17 | 中国兵器工业第五九研究所 | Removing device for organic matters of porous material |
| CN112295631A (en) * | 2020-10-30 | 2021-02-02 | 沈阳真空技术研究所有限公司 | Small-size vacuum furnace heating device in laboratory |
-
2010
- 2010-03-30 CN CN2010201687795U patent/CN201740384U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102206809A (en) * | 2010-03-30 | 2011-10-05 | 杭州海鲸光电科技有限公司 | High temperature vacuum baking furnace and operation method thereof |
| CN102764745A (en) * | 2011-05-04 | 2012-11-07 | 青岛赛瑞达电子科技有限公司 | Baking furnace device of graphite disk for cleaning MOCVD (metal-organic chemical vapor deposition) device |
| CN103033045A (en) * | 2011-09-28 | 2013-04-10 | 喏莫里克株式会社 | Graphite heater furnace |
| CN105318713A (en) * | 2014-08-01 | 2016-02-10 | 天津市维之丰科技有限公司 | Rotary porcelain firing vacuum furnace |
| CN105318713B (en) * | 2014-08-01 | 2017-11-07 | 天津市维之丰科技有限公司 | A kind of rotary porcelain fires vacuum drying oven |
| CN104925793A (en) * | 2015-06-11 | 2015-09-23 | 湘能华磊光电股份有限公司 | Method for removing GaN-based compounds on surface of graphite disc |
| CN104925793B (en) * | 2015-06-11 | 2017-03-01 | 湘能华磊光电股份有限公司 | A kind of method removing graphite surface gan-based compound |
| CN108895830A (en) * | 2018-07-11 | 2018-11-27 | 昆山金美创机械有限公司 | One kind being suitable for LED semiconductor vacuum oven |
| CN108895830B (en) * | 2018-07-11 | 2019-12-06 | 昆山金美创机械有限公司 | Vacuum baking oven suitable for LED semiconductor |
| CN111940418A (en) * | 2020-06-19 | 2020-11-17 | 中国兵器工业第五九研究所 | Removing device for organic matters of porous material |
| CN112295631A (en) * | 2020-10-30 | 2021-02-02 | 沈阳真空技术研究所有限公司 | Small-size vacuum furnace heating device in laboratory |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110209 Termination date: 20130330 |