CN201711850U - Large-diameter silicon wafer polishing device - Google Patents
Large-diameter silicon wafer polishing device Download PDFInfo
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- CN201711850U CN201711850U CN 201020261749 CN201020261749U CN201711850U CN 201711850 U CN201711850 U CN 201711850U CN 201020261749 CN201020261749 CN 201020261749 CN 201020261749 U CN201020261749 U CN 201020261749U CN 201711850 U CN201711850 U CN 201711850U
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- polishing
- silicon wafer
- wheel
- polishing wheel
- polishing device
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Abstract
A large-diameter silicon wafer polishing device comprises a planetary wheel (3) arranged in a vertical direction and capable of driving the silicon wafer to rotate, a left polishing wheel (2) located at the left side of the planetary wheel and driven by a left transmission section (2), a right polishing wheel (4) located at the right side of the planetary wheel and driven by a right transmission section (5); both the left and the right polishing wheels are respectively glued with a polishing pad (7) used to polish the silicon wafer. The surfaces of the polishing wheels are also provided with holes allowing polishing liquid to be spread onto the surface of the silicon wafer; the holes are communicated with hosepipes (6) internally installed in the transmission section and the polishing wheels. The silicon wafer polishing device of the utility model has a compact structure; since the silicon wafer is always kept in a vertical state when polished, the silicon wafer can effectively prevent itself from deforming due to the change in gravity; at the same time, with the polishing device of the utility model, the geometric parameters of a silicon wafer are easier to obtain, which solves the polishing problem arising from the increase in the size of the silicon wafer, thereby, improving working efficiency and the yielding rate of polished products as well.
Description
Technical field
The utility model relates to a kind of silicon wafer polishing device, the burnishing device of the above large-diameter silicon wafer of particularly a kind of 300mm.
Background technology
Semi-conductor silicon chip is the main backing material of modern super large-scale integration, generally the integrated circuit level semiconductor silicon chip that forms by technical process manufacturings such as crystal pulling, section, chamfering, abrasive disc, burn into polishing, cleanings.For increasing the IC chip output, reduce the unit manufacturing cost, silicon chip develops to major diameter, although present main flow is 300mm, the application and the industrialization of 450mm silicon chip studied and advanced in three big IC producers in the world.Because the surface area of large-sized silicon wafers is bigger, geometric parameter is difficult to control in polishing process, and in order to obtain smooth surface, twin polishing replaces single-sided polishing in the polishing process of present large-sized silicon wafers.
Because silicon chip is in suspended state freely, the surface geometry parameter after the polishing can be controlled finely, can reach the requirement of 65nm and 32nm live width in the twin polishing process.But along with the long-pending further increase of silicon chip surface, because area is too big and the problem of self gravitation, the uniformity in the polishing process is difficult to control, thereby can influence the geometric parameter of large-diameter silicon wafer.Therefore, in order to obtain meeting the above silicon chip product of 300mm diameter of geometric parameter requirement, just need a kind of novel silicon wafer polishing device.
Summary of the invention
The purpose of this utility model provides a kind of burnishing device of large-diameter silicon wafer, this apparatus structure compactness, silicon chip is in plumbness when polishing, silicon chip can be avoided the deformation that causes because of deadweight effectively, the polishing problem brought owing to the increase of die size of easier control silicon chip two sides simultaneously, in addition, polishing fluid directly is fed to silicon chip surface by the aperture on polishing wheel surface, the polishing fluid on surface is more even during polishing, can improve the surface smoothness after the polishing effectively, both improve the efficient of producing, improved the yield rate of polished silicon wafer again.
The utility model is by the following technical solutions to achieve the above object of the invention:
A kind of large-diameter silicon wafer burnishing device, it comprises: the vertical direction setting, drive pleasure boat circle that silicon chip is rotated, be positioned at left polishing wheel pleasure boat circle left side, that partly drive by Left Drive, be positioned at right polishing wheel pleasure boat circle right side, that drive by right running part, post the polishing pad that is used for silicon wafer polishing on the left and right polishing wheel respectively, the polishing wheel surface is provided with for the hole of polishing fluid to silicon chip surface, and the hole flexible pipe interior with being built in running part and polishing wheel communicates.
Described left and right polishing wheel is a polishing disk.
The material of polishing wheel is metal or pottery.
The polishing wheel diameter is 150mm～250mm.
Supplying the quantity in the hole of polishing fluid on the polishing wheel is 1～50.
The pleasure boat loop material is a resin.
The pipeline material of polishing fluid feed flow part is a resin.
The utility model has the advantages that this apparatus structure compactness, silicon chip is in plumbness when polishing, silicon chip can be avoided the deformation that causes because of deadweight effectively, the geometric parameter of easier control silicon chip surface of while, can solve the polishing problem that the increase owing to die size brings, both improve the efficient of producing, improved the yield rate of polished silicon wafer again.
Description of drawings
Fig. 1 a: the polishing schematic diagram of present Twp-sided polishing machine
Fig. 1 b: Fig. 1 a cut-away view
Fig. 2: structural representation of the present utility model
Fig. 3: processing schematic diagram when using the utility model
Among Fig. 1 a, Fig. 1 b, 21 is last deep bid, and 22 are following deep bid, and 23 is the edge gear, and 24 is the pleasure boat sheet, and 25 is silicon chip, and 26 is sun gear.
The specific embodiment
It comprises the silicon wafer polishing device: vertical direction is provided with, drive the pleasure boat circle (3) that silicon chip is rotated, be positioned at pleasure boat circle left side, left polishing wheel (1) by Left Drive part (2) drive, be positioned at pleasure boat circle right side, right polishing wheel (4) by right running part (5) drive, a left side, post the polishing pad (7) that is used for silicon wafer polishing respectively on the right polishing wheel, the polishing wheel surface is provided with for the aperture (liquid filling hole) of polishing fluid to silicon chip surface, the hole flexible pipe (6) interior with being built in running part and polishing wheel communicates, and described flexible pipe partly links to each other with the polishing fluid feed flow of equipment outside.
Moving silicon chip (25) rotation of pleasure boat astragal when polishing, polishing fluid is fed to the surface of silicon chip by the aperture on polishing fluid pipeline in the running part of the left and right sides and polishing wheel surface, polishing wheel counter-rotating simultaneously in the left and right sides is polished silicon chip surface, and the rotating speed of left and right sides polishing wheel is identical with pressure.
Because when polishing, silicon chip was vertical, can avoid the deformation that causes because of deadweight effectively, the geometric parameter on surface, easier control silicon chip two sides simultaneously can solve the polishing problem that the increase owing to die size brings.
Claims (7)
1. large-diameter silicon wafer burnishing device, it is characterized in that: it comprises: the vertical direction setting, drive pleasure boat circle (3) that silicon chip is rotated, be positioned at left polishing wheel (1) pleasure boat circle left side, that drive by Left Drive part (2), be positioned at right polishing wheel (4) pleasure boat circle right side, that drive by right running part (5), post the polishing pad (7) that is used for silicon wafer polishing on the left and right polishing wheel respectively, the polishing wheel surface is provided with for the hole of polishing fluid to silicon chip surface, and the hole flexible pipe (6) interior with being built in running part and polishing wheel communicates.
2. according to the desired silicon wafer polishing device of claim 1, it is characterized in that: described left and right polishing wheel is a polishing disk.
3. according to the desired silicon wafer polishing device of claim 1, it is characterized in that: the material of polishing wheel is metal or pottery.
4. according to the desired silicon wafer polishing device of claim 1, it is characterized in that: the polishing wheel diameter is 150mm～250mm.
5. according to claim 1 or 4 desired silicon wafer polishing devices, it is characterized in that: supplying the quantity in the hole of polishing fluid on the polishing wheel is 1～50.
6. according to the desired silicon wafer polishing device of claim 1, it is characterized in that: the pleasure boat loop material is a resin.
7. according to the desired silicon wafer polishing device of claim 1, it is characterized in that: the pipeline material of polishing fluid feed flow part is a resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020261749 CN201711850U (en) | 2010-07-12 | 2010-07-12 | Large-diameter silicon wafer polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020261749 CN201711850U (en) | 2010-07-12 | 2010-07-12 | Large-diameter silicon wafer polishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201711850U true CN201711850U (en) | 2011-01-19 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201020261749 Expired - Lifetime CN201711850U (en) | 2010-07-12 | 2010-07-12 | Large-diameter silicon wafer polishing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201711850U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103009211A (en) * | 2011-09-28 | 2013-04-03 | 上海双明光学科技有限公司 | Installation mechanism for double-sided polishing of reflecting mirror |
| CN107520686A (en) * | 2017-08-25 | 2017-12-29 | 浙江羿阳太阳能科技有限公司 | A kind of silicon chip novel polishing device |
| CN113001379A (en) * | 2021-03-17 | 2021-06-22 | 天津中环领先材料技术有限公司 | Large-size silicon wafer double-side polishing method |
| CN116890266A (en) * | 2023-06-14 | 2023-10-17 | 广州统力新能源有限公司 | Production process of BIPV assembly |
-
2010
- 2010-07-12 CN CN 201020261749 patent/CN201711850U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103009211A (en) * | 2011-09-28 | 2013-04-03 | 上海双明光学科技有限公司 | Installation mechanism for double-sided polishing of reflecting mirror |
| CN107520686A (en) * | 2017-08-25 | 2017-12-29 | 浙江羿阳太阳能科技有限公司 | A kind of silicon chip novel polishing device |
| CN113001379A (en) * | 2021-03-17 | 2021-06-22 | 天津中环领先材料技术有限公司 | Large-size silicon wafer double-side polishing method |
| CN116890266A (en) * | 2023-06-14 | 2023-10-17 | 广州统力新能源有限公司 | Production process of BIPV assembly |
| CN116890266B (en) * | 2023-06-14 | 2024-02-06 | 广州统力新能源有限公司 | Production process of BIPV assembly |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Effective date: 20120113 Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: BEIJING GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS Effective date: 20120113 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20120113 Address after: 100088, 2, Xinjie street, Beijing Patentee after: GRINM Semiconductor Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Co-patentee before: GRINM Semiconductor Materials Co., Ltd. Patentee before: General Research Institute for Nonferrous Metals |
|
| C56 | Change in the name or address of the patentee |
Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 100088, 2, Xinjie street, Beijing Patentee after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088, 2, Xinjie street, Beijing Patentee before: GRINM Semiconductor Materials Co., Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150611 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150611 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: YOUYAN NEW MATERIAL CO., LTD. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110119 |