CN201682407U - Power phase module based on IEGT (Injection Enhanced Gate Transistor) - Google Patents
Power phase module based on IEGT (Injection Enhanced Gate Transistor) Download PDFInfo
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- CN201682407U CN201682407U CN2010201280350U CN201020128035U CN201682407U CN 201682407 U CN201682407 U CN 201682407U CN 2010201280350 U CN2010201280350 U CN 2010201280350U CN 201020128035 U CN201020128035 U CN 201020128035U CN 201682407 U CN201682407 U CN 201682407U
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- iegt
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Abstract
The utility model relates to a power phase module based on an IEGT, which comprises two IEGT devices. Each IEGT device is connected with a fly-wheel diode in parallel; the two IEGT devices are connected together in series, and the middle connection end thereof is led out to serve as an output end; the phase module is provided with a buffering absorption circuit. An airtight box body is arranged outside the electric structure of the phase module; the inside of the airtight box body is isolated into an upper space and a lower space by an insulating barrier; and IEGT units and light-emitting diode units are respectively arranged in the upper space and the lower space of the insulating barrier to form a double-layer structure. The utility model has the advantages that the phase module has high power density, high application reliability and convenient installation and maintenance, can be conveniently and freely combined due to the modular design and can be widely applied to various power electronic devices.
Description
Technical field
It is the power-phase module in the high-power power electronic converter field of core devices with IEGT that the utility model relates to a kind of.
Background technology
IGBT (Insulated Gate Bipolar Transistor) is an insulated gate bipolar transistor, by the compound full-control type voltage driven type power semiconductor that BJT (double pole triode) and MOS (insulating gate type field effect tube) form, have the advantage of low conduction voltage drop two aspects of the high input impedance of MOSFET and GTR concurrently.The GTR saturation pressure reduces, and current carrying density is big, but drive current is bigger; The MOSFET driving power is very little, and switching speed is fast, but conduction voltage drop is big, and current carrying density is little.IGBT combines the advantage of above two kinds of devices, little and the saturation pressure of driving power reduces, and is fit to very much be applied to fields such as converter system such as high voltage converter, high voltage static reacance generator, rolling stock traction convertor, wind-force generating converter, light-duty power transmission and transformation.
IEGT is the above IGBT series power electronic device of the withstand voltage 4kV of reaching, and has realized low on-state voltage by the structure of taking to strengthen injection, makes the large-capacity power electronic device obtain tremendous development.IEGT has the latency development prospect as MOS series power electronic device, have characteristics such as low-loss, high speed motion, high withstand voltage, active grid driving intellectuality, and adopt groove structure and multicore sheet in parallel and from the characteristic of current-sharing, make it have much potentiality aspect current capacity further enlarging.
The packaged type of IEGT is two-sided heat radiation form, IGBT radiating effect than the single face heat radiation is better, the phase module volume is littler, because the structure coverage of the power model that power electronic device is formed is wider, the many-sided technology such as installation, heat radiation, electromagnetic compatibility, High-Voltage Insulation cooperation that comprises power electronic device, therefore the installation ubiquity of IEGT power electronic device distance is loose at present, device is exposed, be unfavorable for insulation, water-cooled circulation is tandem, is unfavorable for shortcomings such as the maintenance of power model and replacing.
Summary of the invention
The purpose of this utility model provides a kind of power-phase module based on IEGT, adopts that sealing is installed, the water-cooling technology, satisfies the related requests such as installation, heat radiation, electromagnetic compatibility, High-Voltage Insulation, modularized design of the power-phase module of IEGT.
For achieving the above object, the utility model is achieved through the following technical solutions:
A kind of power-phase module based on IEGT comprises two IEGT devices, and each IEGT device all is parallel with fly-wheel diode, and two IEGT devices are cascaded, and middle link leads to output; Phase module is provided with buffering and absorbs circuit.
Described buffering absorbs circuit and comprises inductance, resistance, diode and electric capacity, and the diode cathode end links to each other with inductance, and the diode cathode end links to each other with resistance, and resistance links to each other with inductance; The negative pole end of diode also connects electric capacity, and the electric capacity other end is connected with negative busbar.Described inductance is two inductance series connection.Described IEGT device also can be PP IGBT device.
The mechanical structure of this phase module comprises airtight casing and internal structure, and airtight casing comprises framework, peg graft backboard, front panel fast, and internal structure comprises IEGT unit, diode, goes up water knockout drum, water knockout drum, insulating barrier down; Insulating barrier is separated into seal case inside, following two spaces, IEGT unit and diode are separately positioned on the insulating barrier, form double-decker in the following space, last water knockout drum is separately positioned on following water knockout drum, in the following space, be respectively equipped with water-cooled snap joint on last water knockout drum and the following water knockout drum, last water knockout drum and following water knockout drum also link to each other by water pipe with radiator on the diode with the IEGT unit, front panel is provided with the output busbar, driver element and handle, the input busbar is arranged on the quick grafting backboard, and the backboard of pegging graft fast is provided with two guide pillars.
Described IEGT unit is made of butterfly spring, insulating trip, water-cooled buffer inductance, water-filled radiator, coaxial being fitted in together of IEGT device.
Described water-cooled buffer inductance is made up of ferrite bead, metal tube and the water-cooled disk joint of a plurality of serial connections.
Described diode is made of butterfly spring, insulating trip, pressing type resistance, water-filled radiator, coaxial being fitted in together of diode component.
Compared with prior art, the beneficial effects of the utility model are:
1) power density is big; The IEGT unit separates with the dividing plate of diode by insulation, makes the structure of facies unit very compact, reduces the volume of power cabinet.
2) serviceability height; The phase module outside is closed structure, guaranteed that semiconductor power device works under sealing, clean environment, greatly improved the operational reliability of phase module.
3) convenient for installation and maintenance; The input busbar is fixed on the quick grafting backboard, also is provided with guide pillar on the backboard of pegging graft fast, can realize and the port fast insert-pull of other parts, maintains easily and do not need to operate behind cabinet; Design snap joint on the upper and lower water knockout drum, realize that the no water clock of cooling water inserts and disjunction fast, easy to maintenance.
4) the clamp type buffering of selecting for use absorbs circuit and can effectively suppress peak voltage and electric current, promptly effectively stop high dv/dt and di/dt, extenuate the electric stress that device bears greatly in circuit, reduce the switching loss of device, the second breakdown of avoiding device and inhibition electromagnetic interference, thereby improve the reliability of circuit.
5) modularized design independent assortment easily is widely used in the multiple power electronic equipment.
Description of drawings
Fig. 1 is the electrical structure diagram of phase module;
Fig. 2 is a mechanical structure front view of the present utility model;
Fig. 3 is a mechanical structure vertical view of the present utility model;
Fig. 4 is a mechanical structure left view of the present utility model;
Fig. 5 is the mechanical structure schematic diagram after Fig. 2 removes front panel.
Among the figure: the 1-handle 2-output busbar 3-driver element 4-front panel 5-framework 6-guide pillar 7-backboard 8-input busbar 9-butterfly spring 10-water-cooled snap joint 11-that pegs graft fast goes up water knockout drum 17-insulating trip 18-water-cooled disk joint 19-water-filled radiator 20-diode component 21-pressing type resistance 22-IEGT device 23-metal tube under the water knockout drum 12-water-cooled buffer inductance 13-IEGT unit 14-diode 15-insulating barrier 16-
Embodiment
Below in conjunction with accompanying drawing embodiment of the present utility model is described further:
See Fig. 1, a kind of power-phase module based on IEGT, comprise switching device IEGT1 and switching device IEGT2, switching device IEGT1 is parallel with sustained diode 1, switching device IEGT2 is parallel with sustained diode 2, switching device IEGT1 and switching device IEGT2 are cascaded, and middle link leads to output; Phase module is provided with buffering and absorbs circuit.
Buffering absorbs inductance L 1, L2, resistance R, diode D3 and the capacitor C that circuit comprises two series connection, and diode D3 positive terminal links to each other with inductance L 2, and diode D3 negative pole end links to each other with resistance R, and resistance R links to each other with inductance L 1; The negative pole end of diode D3 also connects capacitor C, and the capacitor C other end is connected with negative busbar.Above-mentioned IEGT device also can be PP IGBT device.
See Fig. 2, Fig. 3, Fig. 4, power-phase module based on IEGT, the mechanical structure of this phase module comprises airtight casing and internal structure, airtight casing comprises framework 5, peg graft backboard 7, front panel 4 fast, and internal structure comprises IEGT unit 13, diode 14, goes up water knockout drum 11, water knockout drum 16, insulating barrier 15 down; Insulating barrier is separated into seal case inside, following two spaces, IEGT unit 13 is separately positioned on the insulating barrier 15 with diode 14, form double-decker in the following space, last water knockout drum 11 is separately positioned on framework 5 upper and lowers with following water knockout drum 16, be respectively equipped with water-cooled snap joint 10 on last water knockout drum 11 and the following water knockout drum 16, realize the quick access and the disjunction of cooling water, last water knockout drum 11 and following water knockout drum 16 also link to each other by water pipe with radiator on the diode 14 with IEGT unit 13, front panel 4 is provided with output busbar 2, driver element 3 and handle 1, make things convenient for the phase module I﹠M, input busbar 8 is arranged on the quick grafting backboard 7, also be provided with two guide pillars 6 on the grafting backboard 7 fast, can realize with the port of other parts quick, plug accurately.
See Fig. 5, IEGT unit 13 comprises that the water-cooled disk joint 18 of butterfly spring 9, insulating trip 17, water-filled radiator 19,22, two IEGT devices 22 of IEGT device, water-cooled buffer inductance 12, water-filled radiator 19 are fitted between two body side frames 5 successively by butterfly spring 9 and insulating trip 17; Diode 14 is fitted between two body side frames 5 by butterfly spring 9 and insulating trip 17 successively by three diode components 20, pressing type resistance 21 and water-filled radiator 19, and water-cooled buffer inductance 12 is made up of ferrite bead, metal tube 23 and the water-cooled disk joint 18 of a plurality of serial connections.
Major advantage of the present utility model is: 1) power density is big; The IEGT unit separates with the dividing plate of diode by insulation, makes the structure of facies unit very compact, reduces the volume of power cabinet. 2) serviceability height; The phase module outside is closed structure, guaranteed that semiconductor power device works under sealing, clean environment, greatly improved the operational reliability of phase module. 3) convenient for installation and maintenance; The input busbar is fixed on the quick grafting backboard, also is provided with guide pillar on the backboard of pegging graft fast, can realize and the port fast insert-pull of other parts, maintains easily and do not need to operate behind cabinet; Design snap joint on the upper and lower water knockout drum, realize that the no water clock of cooling water inserts and disjunction fast, easy to maintenance. 4) the Clamp snubber circuit of selecting can effectively suppress peak voltage and electric current, namely effectively stop high dv/dt and di/dt, greatly extenuate the electric stress that device bears in circuit, reduce the switching loss of device, the second breakdown of avoiding device and inhibition electromagnetic interference, thereby improve the reliability of circuit. 5) modularized design independent assortment easily is widely used in the multiple power electronic equipment.
Claims (7)
1. the power-phase module based on IEGT is characterized in that, phase module comprises two IEGT devices, and each IEGT device all is parallel with fly-wheel diode, and two IEGT devices are cascaded, and middle link leads to output; Phase module is provided with buffering and absorbs circuit; The mechanical structure of this phase module comprises airtight casing and internal structure, and airtight casing comprises framework, peg graft backboard, front panel fast, and internal structure comprises IEGT unit, diode, goes up water knockout drum, water knockout drum, insulating barrier down; Insulating barrier is separated into seal case inside, following two spaces, IEGT unit and diode are separately positioned on the insulating barrier, form double-decker in the following space, last water knockout drum is separately positioned on following water knockout drum, in the following space, be respectively equipped with water-cooled snap joint on last water knockout drum and the following water knockout drum, last water knockout drum and following water knockout drum also link to each other by water pipe with radiator on the diode with the IEGT unit, front panel is provided with the output busbar, driver element and handle, the input busbar is arranged on the quick grafting backboard, and the backboard of pegging graft fast is provided with two guide pillars.
2. a kind of power-phase module according to claim 1 based on IEGT, it is characterized in that described buffering absorbs circuit and comprises inductance, resistance, diode and electric capacity, the diode cathode end links to each other with inductance, the diode cathode end links to each other with resistance, and resistance links to each other with inductance; The negative pole end of diode also connects electric capacity, and the electric capacity other end is connected with negative busbar.
3. a kind of power-phase module based on IEGT according to claim 2 is characterized in that, described inductance is two inductance series connection.
4. according to claim 1 or 2 or 3 described a kind of power-phase modules, it is characterized in that described IEGT device also can be PP IGBT device based on IEGT.
5. a kind of power-phase module based on IEGT according to claim 1 is characterized in that, described IEGT unit is made of butterfly spring, insulating trip, water-cooled buffer inductance, water-filled radiator, coaxial being fitted in together of IEGT device.
6. a kind of power-phase module based on IEGT according to claim 5 is characterized in that, described water-cooled buffer inductance is made up of ferrite bead, metal tube and the water-cooled disk joint of a plurality of serial connections.
7. a kind of power-phase module based on IEGT according to claim 1 is characterized in that, described diode is made of butterfly spring, insulating trip, pressing type resistance, water-filled radiator, coaxial being fitted in together of diode component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201280350U CN201682407U (en) | 2010-03-11 | 2010-03-11 | Power phase module based on IEGT (Injection Enhanced Gate Transistor) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201280350U CN201682407U (en) | 2010-03-11 | 2010-03-11 | Power phase module based on IEGT (Injection Enhanced Gate Transistor) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201682407U true CN201682407U (en) | 2010-12-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010201280350U Expired - Lifetime CN201682407U (en) | 2010-03-11 | 2010-03-11 | Power phase module based on IEGT (Injection Enhanced Gate Transistor) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201682407U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101795064A (en) * | 2010-03-11 | 2010-08-04 | 荣信电力电子股份有限公司 | Power phase module based on IEGT |
| CN102611331A (en) * | 2012-03-21 | 2012-07-25 | 江苏晟楠电子科技有限公司 | High-power-density onboard variable voltage rectifier |
| CN103269148A (en) * | 2013-05-02 | 2013-08-28 | 苏州汇川技术有限公司 | Converter or frequency converter power module |
-
2010
- 2010-03-11 CN CN2010201280350U patent/CN201682407U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101795064A (en) * | 2010-03-11 | 2010-08-04 | 荣信电力电子股份有限公司 | Power phase module based on IEGT |
| CN101795064B (en) * | 2010-03-11 | 2012-06-27 | 荣信电力电子股份有限公司 | Power phase module based on IEGT |
| CN102611331A (en) * | 2012-03-21 | 2012-07-25 | 江苏晟楠电子科技有限公司 | High-power-density onboard variable voltage rectifier |
| CN103269148A (en) * | 2013-05-02 | 2013-08-28 | 苏州汇川技术有限公司 | Converter or frequency converter power module |
| CN103269148B (en) * | 2013-05-02 | 2015-06-24 | 苏州汇川技术有限公司 | Converter or frequency converter power module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20101222 Effective date of abandoning: 20120627 |