CN201663167U - 一种太阳电池组件 - Google Patents
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Abstract
本实用新型公开了一种太阳电池组件,其包括层压电池本体、集成旁路二极管以及接线盒,所述旁路二极管设置于电池本体内且一起进行层压封装。所述集成旁路二极管包括阳极端子、阴极端子、电容、MOS管和根据所述电容的充放电状态而输出高低电平的栅极控制电路。这种集成旁路二极管体积较小、发热量较小、反向漏电流较小,设置在太阳电池本体内,简化了接线盒的结构,降低了层叠工序的工艺难度,提高了生产效率,从而大大地节省了太阳电池组件及发电***的生产成本。
Description
技术领域
本实用新型涉及太阳电池制造领域,尤其涉及一种使用集成旁路二极管的太阳电池组件。
背景技术
在太阳电池组件设计和制造中,为防止组件内由于品质异常的电池或部分电池被异物遮挡而发生的电池变热现象(即产生热斑效应)导致损坏电池组件,减少品质异常的电池或使用环境对组件输出功率的影响,需要在几个或更多的串联电池组上并联一个旁路二极管,从而保证太阳电池组件的使用寿命。一般情况下,36片电池串联的组件含有2个旁路二极管,54、60和72片电池串联的组件含有3个旁路二极管,一些反向耐压低和反向漏电大的电池则需要更多的旁路二极管。
现有技术中,通常选择普通整流二极管或肖特基二极管作为组件用旁路二极管,并把它们置于组件的接线盒中。如图1所示,现有技术中的太阳电池组件包括太阳电池组件本体11和接线盒12,接线盒12内设置多个旁路二极管1。这种方式需要从太阳电池组件本体11内的焊点引出连线,接到设置于接线盒12中的旁路二极管1上。
普通的整流二极管的正向压降比较大,当旁路二极管中有大电流通过时会产生很大的热量,有时甚至会烧毁接线盒。肖特基二极管正向压降比普通的整流二极管小一些,但当有大电流通过时还是会产生较大的热量,而且肖特基二极管反向耐压较低,反向漏电流较大,这使得正常工作的太阳电池组件会产生一定的损耗,降低了输出功率。选择普通整流二极管或肖特基二极管作为太阳电池组件的旁路二极管,并把它们置于组件的接线盒中的方式总结起来存在以下缺点:
1、普通整流二极管或肖特基二极管发热量大,需要加装散热器并增大接线盒的体积,这使得接线盒结构较复杂,成本较高。而且产生漏电和烧毁的几率较大,存在安全隐患,从而影响太阳电池组件的质量和寿命。
2、普通整流二极管或肖特基二极管的反向漏电流较大,会使太阳电池组件的输出功率降低。
3、需要单独从太阳电池组件本体内的焊点引出连线以连接到组背面的接线盒内的旁路二极管,增加了层叠工序的复杂程度,容易产生碎片,而且也增加了导线本身的材料成本,另外较长的导线电阻增加了电能消耗。
实用新型内容
为了解决现有技术的上述问题,本实用新型的一个目的在于提供一种太阳电池组件,包括层压电池本体、集成旁路二极管以及接线盒,所述集成旁路二极管体积小、发热量较小、反向漏电流较小,设置在太阳电池组件本体内而无需设置在接线盒内与单独从太阳电池组件本体内的焊点引出的连线进行连接,从而使得接线盒仅仅起到接线端子的作用,结构简单,体积大幅减小。
为了实现本实用新型的以上目的,本实用新型的太阳电池组件,包括层压电池本体、集成旁路二极管以及接线盒,所述集成旁路二极管设置于所述层压电池本体内。
作为优选,所述集成旁路二极管以焊接的方式设置在所述层压电池本体内。
作为优选,所述集成旁路二极管包括阳极端子、阴极端子、电容、MOS管(金属氧化物半导体场效应晶体管)和根据所述电容的充放电状态而输出高低电平的栅极控制电路,所述电容的两端分别连接所述阳极端子和阴极端子;所述栅极控制电路的输入连接所述阴极端子,所述栅极控制电路的输出连接所述MOS管的栅极;所述MOS管的漏极连接所述阴极端子,所述MOS管的源极连接所述阳极端子。
作为优选,所述栅极控制电路包括电压比较器和稳压二极管,所述电压比较器的正输入端和正电源端连接所述阴极端子,负电源端连接所述阳极端子,负输入端连接所述稳压二极管的阴极,输出端连接所述MOS管的栅极;所述稳压二极管的阳极连接所述阳极端子。电压比较器的正输入端输入电容的电压,负输入端的稳压二极管提供参考电压,根据电容的充放电状态而输出高低电平,控制MOS管的导通和截止。
作为优选,所述MOS管的漏极和源极之间连接有一保护二极管。
作为优选,集成旁路二极管的封装形式可以为TO-220 AC、TO-220、MLPD 5x6或D2PAK等。其体积很小,外形尺寸能够达到约5mm×6mm×1mm。
本实用新型的有益效果是:
1、由于本实用新型的太阳电池组件采用的集成旁路二极管正向压降小,正向通过大电流时温度低,从而使得工作中的发热量小,无需单独加装散热器散热,而且由于其体积小,可以直接设置在太阳电池组件本体内。相应地接线盒仅仅起到接线端子的作用,结构可以得到简化,体积可以大大缩小,并且可以置于太阳电池组件本体边缘,从而使得连接导线最短,减少了导线电能损耗。
2、由于本实用新型的集成旁路二极管反向漏电流小,从而减少了电能消耗,提高了太阳电池组件的输出功率。
3、由于本实用新型的太阳电池组件将集成旁路二极管设置在层压电池本体内,不再需要从该本体内的焊点单独引出连线到接线盒中以连接接线盒内的旁路二极管,降低了层叠工序的工艺难度,减少了碎片产生的几率,节省了人力成本,提高了生产效率,从而大大地节省了太阳电池组件及发电***的生产成本。
附图说明
图1是现有技术的太阳电池组件的结构示意图;
图2是本实用新型实施例的太阳电池组件的结构示意图;
图3是图2中的太阳电池组件采用的集成旁路二极管的电路图;
图4是图3的集成旁路二极管的功能示意图;
图5是图3的集成旁路二极管工作过程中的电压测试曲线图;
图6是图3的集成旁路二极管与现有技术的旁路二极管的偏置电流-电能损耗关系曲线对比图;
图7是图3的集成旁路二极管与现有技术的旁路二极管的反向电压-漏电流关系曲线对比图。
具体实施方式
下面结合附图详细说明本实用新型的实施例。
如图2所示,本实施例中的太阳电池组件包括层压电池本体21、接线盒22以及集成旁路二极管3,集成旁路二极管3设置在层压电池本体21内。通常可以用汇流条将集成旁路二极管3焊接在层压电池本体21内。这样一来,接线盒22仅仅起到接线端子的作用,结构可以得到简化,体积可以大大缩小,并且可以置于太阳电池组件本体边缘,从而使得连接导线最短,减少了导线电能损耗。这种接线盒22产生漏电和烧毁的几率变小,从而提高了太阳电池组件的质量和寿命。
将集成旁路二极管3设置在层压电池本体21内,就不再如现有技术中那样需要从层压电池本体21内的焊点单独引出连线到接线盒22中以连接接线盒内的旁路二极管,从而可以降低层叠工序的工艺难度,减少碎片产生的几率,节省人力成本,提高生产效率,从而大大地节省太阳电池组件的生产成本。
要将集成旁路二极管设置在层压电池本体21内需要满足如下特性:体积较小、发热量较小、反向漏电流较小。本实用新型的集成旁路二极管3能够符合这些要求,以下参照图3对本实用新型的集成旁路二极管3的具体结构进行说明。
如图3所示,集成旁路二极管3包括阳极端子32、阴极端子31、电容33、MOS管34(金属氧化物半导体场效应晶体管)和根据电容33的充放电状态而输出高低电平的栅极控制电路35,电容33的两端分别连接阳极端子32和阴极端子31;栅极控制电路35的输入连接阴极端子31,输出连接MOS管35的栅极,栅极控制电路35输出的高低电平控制MOS管35的栅极导通或截止;MOS管34的漏极连接阴极端子31,源极连接阳极端子32。
在本实用新型的一个实施例中,上述MOS管34的漏极和源极之间可以连接有保护二极管36,其起到保护MOS管34的作用。
如图4所示,集成旁路二极管3相当于MOS管34的栅极受高低电平控制而导通或截止的器件,所起的功能与现有技术中的旁路二极管1是一样的。高低电平的时间的合理设定,可以减少MOS管34的漏极和源极之间的电压,从而减少漏电流。
栅极控制电路35可以有很多种,只要功能上能够根据电容33的充放电状态输出高低电平即可满足要求。本实施例中给出一种具体的栅极控制电路35,其包括电压比较器351和稳压二极管352,电压比较器351的正输入端和正电源端连接阴极端子31,负电源端连接阳极端子32,负输入端连接稳压二极管352的阴极,输出端连接MOS管34的栅极;稳压二极管352的阳极连接阳极端子32。电压比较器351的负输入端提供参考电压(具体值根据电压比较器的阈值电压确定),电压比较器351的正输入端提供比较电压,输出端根据比较电压和阈值电压的关系进行翻转而输出高低电平。
如图5所示,图中示出了电容33的充放电电压(VCAP)曲线41、电压比较器351的输出电平(VGATE)曲线42和MOS管34的漏极和源极之间的电压(VDS)曲线43。原理大致如下:电容33充电过程中(曲线41上升段),VGATE为低电平(零),MOS管34截止,存在不为零但很小的VDS;当电容33的电压达到上限阈值电压时,VGATE翻转为高电平(与电容电压大致重合),MOS管34导通,电容33开始放电(曲线41下降段),VDS为零;当电容33的电压降到下限阈值电压时,VGATE翻转为低电平,MOS管34截止,电容33重新开始充电。
通过控制MOS管34的导通和截止时间,可以减少VDS,从而减小漏电流,进而减少了电能消耗,提高了太阳电池组件的输出功率。
由于MOS管34的正向压降小,集成旁路二极管3正向通过大电流时温度低,从而使得工作中的发热量小,无需单独加装散热器散热。集成旁路二极管可以使用3TO-220 AC、TO-220、MLPD 5x6或D2PAK等封装形式进行封装,外形尺寸能够达到5mm×6mm×1mm,体积很小,因此可以直接设置在太阳电池组件本体内。
为了进一步说明本实施例的集成旁路二极管3的优点,下面对集成旁路二极管3和现有技术中的两种旁路二极管(旁路二极管1和旁路二极管2)进行对比。
如图6所示,比较集成旁路二极管3的偏置电流-电能损耗关系曲线63、旁路二极管1的偏置电流-电能损耗关系曲线61和旁路二极管2的偏置电流-电能损耗关系曲线62可知,使用集成旁路二极管3时,不同偏置电流对应的电能损耗都是最低的。
如表一所示的集成旁路二极管3与现有技术的旁路二极管的电流-温度关系对比表,使用集成旁路二极管3时,在不同偏置电流下对应的温度都是三种旁路二极管中最低的,即发热量很低,因此可以将集成旁路二极管3设置在层压电池本体21内。
表一:集成旁路二极管与现有技术的旁路二极管的电流-温度关系
对比表
如图7所示,比较集成旁路二极管3的反向电压-漏电流关系曲线73(各个温度下测试的多条曲线)、旁路二极管1的反向电压-漏电流关系曲线71和旁路二极管2的反向电压-漏电流关系曲线72可知,使用集成旁路二极管3时,其漏电压和漏电流都是三种旁路二极管中最低的,从而减少了电能消耗,提高了太阳电池组件的输出功率。
以上实施例仅为本实用新型的示例性实施例,不用于限制本实用新型,本实用新型的保护范围由权利要求书限定。本领域技术人员可以在本实用新型的实质和保护范围内,对本实用新型做出各种修改或等同替换,这种修改或等同替换也应视为落在本实用新型的保护范围内。
Claims (5)
1.一种太阳电池组件,其特征在于,包括层压电池本体、集成旁路二极管以及接线盒,所述集成旁路二极管设置于所述层压电池本体内。
2.根据权利要求1所述的太阳电池组件,其特征在于,所述集成旁路二极管以焊接的方式设置在所述层压电池本体内。
3.根据权利要求1或2所述的太阳电池组件,其特征在于,所述集成旁路二极管与层压电池本体一起进行层压封装。
4.根据权利要求1所述的太阳电池组件,其特征在于,所述集成旁路二极管包括阳极端子、阴极端子以及电容、MOS管和根据所述电容的充放电状态而输出高低电平的栅极控制电路,其中,
所述电容的两端分别连接所述阳极端子和阴极端子;
所述栅极控制电路的输入连接所述阴极端子,所述栅极控制电路的输出连接所述MOS管的栅极;
所述MOS管的漏极连接所述阴极端子,所述MOS管的源极连接所述阳极端子。
5.根据权利要求4所述的太阳电池组件,其特征在于,所述栅极控制电路包括电压比较器和稳压二极管,其中,
所述电压比较器的正输入端和正电源端连接所述阴极端子,负电源端连接所述阳极端子,负输入端连接所述稳压二极管的阴极,输出端连接所述MOS管的栅极;
所述稳压二极管的阳极连接所述阳极端子。
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