CN201623694U - Assembly controlling semiconductor element and large power circuit and device with assembly - Google Patents
Assembly controlling semiconductor element and large power circuit and device with assembly Download PDFInfo
- Publication number
- CN201623694U CN201623694U CN2009201780274U CN200920178027U CN201623694U CN 201623694 U CN201623694 U CN 201623694U CN 2009201780274 U CN2009201780274 U CN 2009201780274U CN 200920178027 U CN200920178027 U CN 200920178027U CN 201623694 U CN201623694 U CN 201623694U
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- unit
- assembly
- semiconductor element
- clamp
- actuator unit
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Abstract
The utility model relates to a grid unit device for controlling a semiconductor element, in particular to an assembly (200) for controlling the semiconductor element (201), which is provided with a driver unit (202) and a clamper and distributor unit (203). The driver unit (202) is used for controlling the semiconductor element (201), and the clamper and distributor unit (203) is used for distributing voltage to the semiconductor unit (201) and affecting switching characteristics of the semiconductor element (201). The driver unit (202) and the clamper and distributor unit (203) are mounted with an angle such as ranging from 0 degree to smaller than 90 degrees relatively to each other, thereby maintaining a necessary electric leakage path and a space for optimization and use. A bridging device (212) is composed for adjusting running modes of the assembly (202).
Description
Technical field
The utility model relates to the control of semiconductor element, and the utility model particularly relates to the assembly that is used to control semiconductor element.The utility model relates to a kind of high-power circuit and a kind of device of being made up of two semiconductor elements and corresponding assembly with semiconductor element and corresponding assembly in addition.
Background technology
For control have insulated gate electrodes (insulated gate bipolar transistor, IGBT) for example as the semiconductor element of bipolar transistor, the grid unit can be divided into two pieces: the IGBT driver piece of logic function and the clamp circuit and the distributing module of power functions.
IGBT driver piece has quite little power bracket usually and can be arranged on the very little zone, for example minitype circuit board (printed circuit board (PCB), abbreviation PCB).In contrast to this, clamp circuit and distributing module are owing to the required separation distance of power consumption and current potential needs added space.In this regard, the voltage between collector electrode and grid or the emitter depends on that IGBT power can be in the kilovolt range.
The required space of clamp circuit and distributing module is quite big.
The utility model content
The purpose of this utility model is, the control that the simple, low-cost of a kind of semiconductor element is provided and saves the position.
A kind of assembly that is used to control semiconductor element is provided, has the high-power circuit of semiconductor element and corresponding assembly and by two semiconductor elements and the device that this assembly is formed.
According to an embodiment of the present utility model, provide a kind of assembly that is used to control semiconductor element, clamp and distributor unit (clamp circuit and voltage distribution) that this assembly has the actuator unit (for example IGBT driver logic) that is used to control semiconductor element and is used for distributing to semiconductor element voltage.Actuator unit and clamp and distributor unit are installed to the angle between spending less than 90 with 0 each other, so that for example keep leakage current path and optimize operational space or position.
The angle that actuator unit and clamp and distributor unit are installed each other for example can be between 5 to 80 degree, between 10 to 70 degree, between 10 to 60 degree, between 10 to 50 degree, between 15 to 45 degree or between 20 to 40 degree.Angle can be 30 degree, 20 degree or 15 degree in addition.
This assembly that is used to control semiconductor element can make operational space obtain utilizing very compactly and can realize the simple and low-cost control of semiconductor element.By will be for example the grid unit be arranged in this assembly, can reduce space requirement or space can obtain more effectively utilizing be provided with in the mode of compactness because only need to strengthen air cooled high-power parts, thereby can minimum electromagnetic interference.
Be provided with because actuator unit and clamp and distributor list are compact, can reduce the coupling (electromagnetic compatibility EMC) between interference source and the receiver.In other words, electromagnetic interference is dropped to bottom line.The area that produces between collector electrode and grid or the emitter keeps as far as possible for a short time, because electromagnetic induction (EMC interference) depends on the size of area.That is to say that the area of expansion is big more, control unit is easy being interfered more just.
Actuator unit can make the high-power parts shortening of clamp and distributor unit be connected with the compact this assembly that is provided with of clamp and distributor unit or shorten wiring.
In addition, the distance between collector electrode and grid or the emitter can be by required size, to keep depending on the air-gap and the leakage current path of the semi-conductive voltage that will control.That is to say that voltage is big more, the air-gap and the leakage current path of correct function just must be big more.
This assembly for example can have the coding screw, and it determines the application of same parts in different working modes.
According to another embodiment of the present utility model, assembly has cooling unit in addition, and wherein, the distance between actuator unit and clamp and the distributor unit is constituted as the best cooling that obtains actuator unit and clamp and distributor unit by cooling unit.Actuator unit and clamp and distributor unit are provided with so each other, are to reach high gas flow speed little duct cross-section is provided.
According to another embodiment of the present utility model, assembly has cooling unit, and wherein, clamp and distributor unit are arranged in first air-flow that provides by cooling unit to be used to cool off clamp and distributor unit.Actuator unit is arranged in second air-flow that provides by cooling unit to be used to cool off actuator unit.First air-flow provides and compares the more effectively cooling of (reinforcement) with second air-flow.
This assembly with cooling unit can make the clamp and the distributor unit that have high loss power and can influence semiconductor switch characteristic and high heat release obtain strong targetedly air cooling.Strong air cooling is for example compared with the actuator unit that is used to control semiconductor element and have low-loss power can be obviously stronger.
This assembly with cooling unit can be by being provided with actuator unit and clamp and the distributor unit provides the air channel targetedly, thereby clamp and distributor unit can obtain cooling.
Cooling unit for example can adopt the fan that sucks fresh air to realize.Air can pass through cooling unit then targetedly.
According to another embodiment of the present utility model, actuator unit is a kind of grid unit that is used to control semiconductor element.
According to another embodiment of the present utility model, actuator unit is a kind of driver circuit board.Actuator unit can be driver printed circuit board (PCB) or printed circuit board or control circuit board in addition.
According to another embodiment of the present utility model, clamp and distributor unit are a kind of clamp and distributor circuit board or clamp and distributor printed circuit board (PCB).Clamp and distributor unit can be used as equally that clamp circuit is firm and hard to be executed.
According to another embodiment of the present utility model, actuator unit can have at least one slit that is used to strengthen leakage current path.
According to another embodiment of the present utility model, actuator unit has two passages, and they are electrically isolated from one and be constituted as series connection or control semiconductor element independently and second half conductor element.
Semiconductor element can be in this regard bipolar transistor with gate electrode of insulation (insulated gate bipolar transistor, IGBT).
According to another embodiment of the present utility model, clamp and distributor unit have the slit that at least one is used to strengthen leakage current path.
According to another embodiment of the present utility model, assembly has the crossover assembly that is used to adjust the assembly operating pattern.
Crossover assembly can be by the element in coding jumper, coding screw, coding bolt and the group formed of coding pin.
This crossover assembly is constructed for the cross-over connection contact also can the mechanical operational mode of determining actuator unit.
According to another embodiment of the present utility model, the operational mode of actuator unit is determined in the position of crossover assembly.Actuator unit is worked in first operational mode according to the primary importance of determining of crossover assembly.Actuator unit is worked in second operational mode according to the second place of determining of crossover assembly.
According to another embodiment of the present utility model, assembly has service cable in addition, and it has the ferrite that is used to improve semiconductor element electromagnetism operation characteristic, for example is used to reduce electromagnetic interference.
For example can utilize filter to reach and reduce the purpose of disturbing.
This assembly that band has ferritic service cable can suppress " common mode " or minimum electromagnetic interference.In other words, " common mode inductance " reduces electromagnetic interference in the ferritic mode in the service cable.
According to another embodiment of the present utility model, semiconductor element is a kind of bipolar transistor with insulated gate electrodes (IGBT) of high-power purposes.
Provide a kind of high-power circuit according to another embodiment of the present utility model, it has semiconductor element and by the described assembly of one of previous embodiment.
According to another embodiment of the present utility model, high-power circuit is a frequency converter.
According to another embodiment of the present utility model, high-power circuit be a kind of by the frequency converter of Switching Power Supply, Driving technique, on the induction furnace frequency converter, DC chopper (Gleichstromsteller), connect the dimmer of halogen low-pressure lamp for example, each in the group formed of angle controller, high pressure-direct current transmitter, inverter, semiconductor relay and medium voltage frequency converter mutually with electronic transformer.
According to another embodiment of the present utility model, provide by two semiconductor elements and an a kind of device of being formed by the described assembly of one of aforementioned claim.
According to another embodiment of the present utility model, provide a large amount of semiconductor elements and the device of being formed by the described assembly of one of previous embodiment.
The various features of different embodiment also can make up mutually, and the advantageous effects of individual event effect summation can also appear exceeding in part thus, although it is not clearly introduced.
Description of drawings
Below by these and other aspects of the present utility model being introduced and illustrating with reference to illustrational execution mode in view of the above.Wherein:
Fig. 1 illustrates the two IGBT driver schematic diagrames with high-power circuit;
Fig. 2 A illustrates the perspective view schematic diagram that is used to control the assembly high-power circuit of semiconductor element according to having of the utility model embodiment;
Fig. 2 B illustrates the perspective view schematic diagram of assembly that is used to control semiconductor element according to the utility model embodiment;
Fig. 2 C illustrates the front view schematic diagram of controlling the assembly of semiconductor element according to being used to shown in Fig. 2 B of the utility model embodiment;
Fig. 2 D illustrates the sectional view schematic diagram of controlling the assembly of semiconductor element according to being used to shown in Fig. 2 B and 2C of the utility model embodiment;
Fig. 3 illustrates the schematic diagram according to the part front view of the actuator unit of the assembly shown in Fig. 2 A-2D of another embodiment of the utility model.
Embodiment
Fig. 1 illustrates the device 100 of two IGBT drivers 101, have separately a clamp circuit and distributor unit 102, be used to distribute voltage or power and be used for influence semiconductor element separately, particularly have the switching characteristic of the IGBT of collector electrode 103, emitter 104 and grid 105 separately.
IGBT driver 101 is regulated logic function or control IGBT-grid 105, wherein, and the power functions that IGBT is regulated in clamp circuit and distributor unit 102.
The power that depends on IGBT can apply the voltage of kilovolt range with respect to grid 105 or emitter 104 on the collector electrode 103.
Fig. 2 A provides the perspective illustration of high-power circuit 216, has two semiconductor elements 201,211, and they are connected with the assembly 200 that is used to control semiconductor element 201,211.Actuator unit 202 is constructed for controlling semiconductor element 201,211.Clamp and distributor unit 203 are constructed for distributing voltage to semiconductor element 201,211, and wherein, clamp and distributor unit 203 can be used as the symmetric circuit plate and constitute.
Can be used as actuator unit 202 that circuit board or printed circuit board (PCB) constitute and clamp and distributor unit 203 separately and install with the angle between 0 to 90 degree 204 each other, to keep leakage current path and to optimize operational position.
Fig. 2 A illustrates cooling unit 205 in addition, and wherein, the distance between actuator unit 202 and clamp and the distributor unit 203 is constituted as the best cooling that actuator unit 202 and clamp and distributor unit 203 are provided by cooling unit 205.Actuator unit 202 and clamp and distributor unit 203 are provided with so each other, be the speed air flow that reaches high little duct cross-section is provided.
Clamp and distributor unit 203 are arranged in first air-flow 206 that provides by cooling unit 205 to be used to cool off clamp and distributor unit 203.
First air-flow 206 is compared with second air-flow 207 provides more effectively cooling.For example cooling unit also can be arranged on the right side on 202,203 next doors, two unit in the execution mode of Fig. 2 A.
Clamp and distributor unit 203 have a plurality of cooling bodies 217 that enlarge film-cooled heat, are used for more effectively cooling off clamp and distributor unit 203 by cooling unit 205.
According to Fig. 2 A, assembly has had the service cable 215 of ferrite 218 integrated, is used to improve the electromagnetism operation characteristic of semiconductor element 201,211, for example is used to reduce electromagnetic interference.
Fig. 2 B illustrates being used to shown in Fig. 2 A and controls the perspective view of the assembly 200 of semiconductor element 201, has service cable 215, actuator unit 202, clamp and distributor unit 203 and cooling body 217 and two passages electrically isolated from one 210.
Among this external Fig. 2 B, clamp and distributor unit 203 have at least one slit 208 that is used to strengthen leakage current path.
The operational mode of actuator unit 202 is determined in the position of crossover assembly 212.
Fig. 2 C illustrates the front view schematic diagram of assembly 200 that is used to control semiconductor element of Fig. 2 B.
Fig. 2 D illustrates the sectional view schematic diagram of assembly 200 that is used to control semiconductor element of Fig. 2 B and 2C.
Fig. 3 illustrates the schematic diagram of part front view of the actuator unit 202 of Fig. 2 A-2D assembly, has to be used to two crossover assemblies 212 strengthening three slits 208 of leakage current path and be used to adjust the operational mode of the assembly with actuator unit 202.
The operational mode of driver element 202 is determined in the position of crossover assembly 212, wherein, actuator unit 202 is worked in first operational mode according to the primary importance of determining 213 of crossover assembly 212, and wherein actuator unit 202 is worked in second operational mode according to the second place of determining 214 of crossover assembly 212.
Though application is introduced to the utility model under the situation of reference embodiment, can carry out various variations and modification, and not depart from protection range of the present utility model.
It is pointed out that as a supplement " comprising " or " having " do not get rid of other elements or step, " one " or " not having " gets rid of most.
Assembly especially for the control semiconductor element for example can have more than one actuator unit, more than one clamp and distributor unit, more than one cooling unit, more than one crossover assembly and more than one service cable, high-power circuit has more than one semiconductor element and more than one assembly, and device has plural semiconductor element and more than one assembly.
It is pointed out that in addition the feature introduced with reference to the foregoing description or step also can with the combination of other features of above-mentioned other embodiment or step under use.Reference numeral in the claim should not be considered as restriction.
List of numerals
100 have the device of two IGBT drivers of high-power switching circuit
101 IGBT drivers
102 clamp circuits and distributor
103 colelctor electrodes
104 emitter stages
105 grid
200 are used for the assembly of control semiconductor element
201 semiconductor elements, IGBT
202 actuator units, driver circuit board, driver printed circuit board (PCB)
203 clamps and distributor unit 203, clamp and distributor circuit board, clamp and distributor printed circuit board (PCB)
204 0 to spending 5-80 degree, 10-70 degree, 10-60 degree, 10-50 degree, 15-45 degree, the angles of 20-40 degree, 30 degree, 20 degree, 15 degree less than 90
205 cooling units
206 first air-flows
207 second air-flows
The slit of 208 actuator units
The slit of 209 clamps and distributor unit
210 passages, electrically isolated from one
212 crossover assemblies, coding screw, bolt, pin
The primary importance of 213 crossover assemblies
The second place of 214 crossover assemblies
215 comprise ferritic service cable
216 high-power circuits
217 cooling bodies
218 ferrites
Claims (14)
1. be used to control the assembly of semiconductor element, it is characterized in that this assembly (200) has: the actuator unit (202) that is used to control semiconductor element (201); Be used between first semiconductor element (201) and second semiconductor element (211), distributing clamp and distributor unit (203) of voltage; Wherein, install to the angle (204) between spending less than 90 with 0 each other actuator unit (202) and clamp and distributor unit (203).
2. by the described assembly of claim 1, has cooling unit (205) in addition; Wherein, the distance between actuator unit (202) and clamp and distributor unit (203) is configured and makes and to provide the best to cool off by cooling unit (205) for actuator unit (202) and clamp and distributor unit (203); Wherein, actuator unit (202) and clamp and distributor unit (203) are arranged so that each other to reaching high gas flow speed provides little duct cross-section.
3. by the described assembly of claim 1, has cooling unit (205) in addition; Wherein, clamp and distributor unit (203) are arranged in first air-flow (206) that provides by cooling unit (205) to be used to cool off clamp and distributor unit (203); Wherein, actuator unit (202) is arranged in second air-flow (207) that provides by cooling unit (205) to be used to cool off actuator unit (202); Wherein, first air-flow (206) provides and compares more effectively cooling with second air-flow (207).
4. by one of aforementioned claim 1-3 described assembly, wherein, actuator unit (202) is a kind of grid unit that is used to control semiconductor element (201).
5. by one of aforementioned claim 1-3 described assembly, wherein, actuator unit (202) has at least one slit that is used to strengthen leakage current path (208).
6. by the described assembly of one of aforementioned claim 1-3, wherein, actuator unit (203) has two passages (210), and they are electrically isolated from one and be constituted as series connection or independent control semiconductor element (201) and second half conductor element (211).
7. by one of aforementioned claim 1-3 described assembly, wherein, clamp and distributor unit (203) have at least one slit that is used to strengthen leakage current path (209).
8. by one of aforementioned claim 1-3 described assembly, has the crossover assembly (212) that is used to adjust assembly (200) operational mode in addition.
9. by the described assembly of claim 8, wherein, the operational mode of actuator unit (202) is determined in the position of crossover assembly (212); Wherein, actuator unit (202) is worked in first operational mode according to the primary importance of determining (213) of crossover assembly (212); Wherein, actuator unit (202) is worked in second operational mode according to the second place of determining (214) of crossover assembly (212).
10. by the described assembly of one of aforementioned claim 1-3, have service cable (215) in addition, it 0 has the ferrite (218) that is used to improve semiconductor element (201) electromagnetism operation characteristic.
11. by one of aforementioned claim 1-3 described assembly, wherein, semiconductor element (201) is a kind of bipolar transistor of insulated gate electrodes (IGBT) of high-power purposes.
12. high-power circuit has semiconductor element (210) and is used to control the assembly (200) of semiconductor element (201),
It is characterized in that this assembly (200) has:
Be used to control the actuator unit (202) of semiconductor element (201); Be used between first semiconductor element (201) and second semiconductor element (211), distributing clamp and distributor unit (203) of voltage; Wherein, install to the angle (204) between spending less than 90 with 0 each other actuator unit (202) and clamp and distributor unit (203).
13. by the described high-power circuit of claim 12, wherein, high-power circuit (216) is a frequency converter.
14. be used to control the device that the assembly (200) of two semiconductor elements is formed by two semiconductor elements and one,
It is characterized in that this assembly (200) has:
Be used to control the actuator unit (202) of semiconductor element (201); Be used between first semiconductor element (201) and second semiconductor element (211), distributing clamp and distributor unit (203) of voltage; Wherein, install to the angle (204) between spending less than 90 with 0 each other actuator unit (202) and clamp and distributor unit (203).
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09171101A EP2302798A1 (en) | 2009-09-23 | 2009-09-23 | Control for a semiconductor device |
| EP09171100A EP2302797A1 (en) | 2009-09-23 | 2009-09-23 | Control for a semiconductor device |
| EP09171101.0 | 2009-09-23 | ||
| EP09171100.2 | 2009-09-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201623694U true CN201623694U (en) | 2010-11-03 |
Family
ID=43027148
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202913095U Expired - Lifetime CN201797307U (en) | 2009-09-23 | 2009-10-16 | Protection control circuit |
| CN2009201780274U Expired - Lifetime CN201623694U (en) | 2009-09-23 | 2009-10-16 | Assembly controlling semiconductor element and large power circuit and device with assembly |
| CN2009201780310U Expired - Lifetime CN201663433U (en) | 2009-09-23 | 2009-10-16 | Protecting device for preventing short circuit caused in current transformer |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202913095U Expired - Lifetime CN201797307U (en) | 2009-09-23 | 2009-10-16 | Protection control circuit |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201780310U Expired - Lifetime CN201663433U (en) | 2009-09-23 | 2009-10-16 | Protecting device for preventing short circuit caused in current transformer |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN201797307U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105305816A (en) * | 2015-11-09 | 2016-02-03 | 飞毛腿(福建)电子有限公司 | Method for realizing circuit control by adopting series connection of field-effect tubes |
-
2009
- 2009-10-16 CN CN2009202913095U patent/CN201797307U/en not_active Expired - Lifetime
- 2009-10-16 CN CN2009201780274U patent/CN201623694U/en not_active Expired - Lifetime
- 2009-10-16 CN CN2009201780310U patent/CN201663433U/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN201797307U (en) | 2011-04-13 |
| CN201663433U (en) | 2010-12-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20101103 |
|
| CX01 | Expiry of patent term |