CN201556625U - Schottky diode structure capable of reducing reverse leakage current and having low forward voltage drop - Google Patents
Schottky diode structure capable of reducing reverse leakage current and having low forward voltage drop Download PDFInfo
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- CN201556625U CN201556625U CN2009202714462U CN200920271446U CN201556625U CN 201556625 U CN201556625 U CN 201556625U CN 2009202714462 U CN2009202714462 U CN 2009202714462U CN 200920271446 U CN200920271446 U CN 200920271446U CN 201556625 U CN201556625 U CN 201556625U
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- schottky diode
- diode structure
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Abstract
The utility model relates to a Schottky diode structure capable of reducing reverse leakage current and having low forward voltage drop, which is provided with a first conductive material semi-conductor substrate and a metal layer combined with the same. An oxidation layer is arranged at a combined peripheral edge of the first conductive material semi-conductor substrate and the metal layer, wherein pluralities of second conductive material areas which are in point arrangement is formed inside the surface of the first conductive material semi-conductor substrate which is adjacently connected with the metal layer, the second conductive material areas can form a depletion region inside the first conductive material semi-conductor substrate, and the depletion region can reduce leakage area of the Schottky diode and then reduce the reverse leakage current and forward voltage drop thereof. When a first conductive material is a P-type semi-conductor, a second conductive material is an N-type semi-conductor, and on the contrary, when the first conductive material is an N-type semi-conductor, the second conductive material is a P-type semi-conductor.
Description
Technical field
The utility model is about a kind of diode, refers to especially a kind ofly reduce converse electrical leakage stream and have the low forward Schottky diode structure of pressure drop.
Background technology
Please refer to shown in Figure 6ly, the A of characteristic curve shown in the figure is the diode that general P-N connects face, and another curve B is the characteristic curve of general Schottky diode.Wherein, when the electric current that is applied to diode is forward current, can find out the P-N junction rectifier scope that forward electrical conduction current is little its forward pressure drop be higher than the forward pressure drop of Schottky diode, P-N junction rectifier as only is after the forward current that is applied to its element increases, the forward pressure drop that its element is improved less than the every increase unitary current of Schottky diode along with the forward pressure drop meeting that unitary current improved of every increase, Schottky diode is when the working region of big forward current, it is the similar resistance characteristic of variation of pressure drop forward, will increase fast, so more than the forward pressure drop height of P-N junction rectifier, if low more then this phenomenon of energy barrier height (barrier height) will be obvious more.As shown in Figure 6, the forward pressure drop meeting of P-N junction rectifier and Schottky diode has the point of intersection to occur in galvanic areas.Compared to the P-N junction rectifier, the forward conducting voltage of Schottky diode is lower and reverse recovery time is little, can be applicable to high speed operation, so often be applied to high-frequency rectification.
With another angle, when applying revers voltage, can find the apparent P-N junction rectifier that is higher than of converse electrical leakage lumen of Schottky diode, this is the shortcoming of Schottky diode, only lack at present and all will can both possess the high speed operation advantage under the very low situation, and under revers voltage, reduce the Schottky diode of converse electrical leakage stream in the forward pressure drop that high current density or low current density produced.
Summary of the invention
When facing contrary operation voltage in view of present Schottky diode, often produce bigger leakage current and limited its application, and when the forward current load, have no idea simultaneously can both the to possess advantage of low relatively forward voltage drop at high current density and low current density, main purpose of the present utility model provides a kind of can possess high speed operation, the low forward advantage of pressure drop under forward current, and suppresses the Schottky diode of leakage current when backward current.
For reaching aforementioned purpose, the utility model can reduce converse electrical leakage stream and have the low forward Schottky diode structure of pressure drop and includes:
One first conductive material semiconductor substrate, form a ring protection ring in inside, this guard ring region surrounded is an active region, forms a plurality of second conductive material zones of spot distribution that are in active region inside to produce exhaustion region at the semiconductor-based intralamellar part of first conductive material;
One oxide layer is covered in this first conductive material and partly leads substrate surface;
One metal level is covered in the active region of this oxide layer and the first conductive material semiconductor substrate, forms Schottky between this metal level and the first conductive material semiconductor substrate and contacts.
Wherein, these a plurality of second conductive material zones point-like that can be matrix form is arranged or the point-like that is alternating expression is arranged.
By said structure, aforementioned second conductive material zone is because be trivalent material by doped with high concentration, make this place become the second conductive material semiconductor, therefore meet the face place in second conductive material zone with the first conductive material semiconductor substrate and will form exhaustion region (depletion region), those exhaustion regions can reduce its electric leakage area when Schottky diode operates in revers voltage, so reduce converse electrical leakage stream and forward pressure drop, reached beneficial technical effects.
Description of drawings
Fig. 1 is the floor map of the utility model first embodiment;
Fig. 2 is the generalized section of the utility model first embodiment;
Fig. 3 is the floor map of the utility model second embodiment;
Fig. 4 is the part plan enlarged drawing of the utility model second embodiment;
Fig. 5 is a voltage-current characteristic curve chart of the present utility model;
Fig. 6 is the voltage-current characteristic curve chart of P-N junction rectifier commonly used and Schottky diode.
Description of reference numerals
The 10-first conductive material semiconductor substrate; The 12-guard ring; The 14-second conductive material zone; The 16-exhaustion region; The 20-oxide layer; The 30-metal level; The 40-equilateral triangle.
Embodiment
Has semi-conducting material in the utility model Schottky diode structure, reaching " second conductive material " with " first conductive material " is in the following description described, wherein, if first conductive material is the P type semiconductor material, then second conductive material then is the N type semiconductor material; Otherwise if first conductive material is the N type semiconductor material, then second conductive material refers to the P type semiconductor material.
Please refer to shown in Fig. 1,2, floor map and generalized section thereof for the utility model first embodiment include:
One first conductive material semiconductor substrate 10, the substrate that is constituted by the first conductive material semi-conducting material, for example with arsenic, pentavalent materials such as phosphorus can form N type substrate, form the guard ring 12 of an annular in the periphery of this first conductive material semiconductor substrate 10, this guard ring 12 is second conductive material and is formed in the first conductive material semiconductor substrate 10, these guard ring 12 region surrounded are defined as active region (activearea), the first conductive material semiconductor substrate 10 is in a plurality of second conductive material zones 14 of the inner formation of this active region, this second conductive material zone 14 can be point-like and arrange, in present embodiment, the matrix that these a plurality of second conductive material zones 14 present point-like is regularly arranged, in the present embodiment, first conductive material is a n type material, and second conductive material is a P-type material;
One oxide layer 20 is covered in the loop configuration on these first conductive material semiconductor substrate, 10 surfaces, and this oxide layer 20 covers guard ring 12 tops of part;
One metal level 30 is covered in the active region of this oxide layer 20 and the first conductive material semiconductor substrate 10, forms Schottky between this metal level 30 and the first conductive material semiconductor substrate 10 and contacts.
Wherein, the aforementioned second conductive material zone 14 that is formed on these first conductive material semiconductor substrate, 10 inside, for example trivalent or the pentavalent ion by doped with high concentration can make this place become P type or N type semiconductor respectively, therefore in second conductive material zone 14 and first conductive material semiconductor substrate 10 both meet the face place, will in the first conductive material semiconductor substrate 10, form exhaustion region (depletionregion) 16 because of electronics combines with electric hole.The second conductive material zone 14 by aforementioned high density distribution, in the first conductive material semiconductor substrate 10, can produce large-scale exhaustion region 16, those exhaustion regions then can reduce its electric leakage area when Schottky diode operates in revers voltage, reduce converse electrical leakage stream thus.
Please refer to shown in Figure 5, voltage-current characteristic curve chart for the utility model Schottky diode, when applying backward current at Schottky diode of the present utility model, because the existence of exhaustion region is arranged, so the electric leakage situation of Schottky diode can obviously be improved.When the forward current that applies during in little current range, has the low forward operational advantage of pressure drop of Schottky diode, enter big current practice zone along with the raising of forward current, compared to general Schottky diode, forward pressure drop of the present utility model can't improve apace, therefore the utility model can both possess low relatively forward pressure drop under the situation of high electric current and low current.
Please refer to shown in Fig. 3,4, be the utility model second embodiment, this embodiment also is the second conductive material zone 14 that forms spot distribution in the first conductive material semiconductor substrate, 10 inside, only this second conductive material zone 14 is not that to be matrix regularly arranged, being staggered but present, staggers each other with the second conductive material zone 14 of adjacent row or column in second conductive material zone 14 on promptly arbitrary row or column.Be datum mark and two second conductive material zones 14 being adjacent if get any second conductive material zone 14, the three can be arranged in the geometry of an equilateral triangle 40, this kind arrangement mode can make the exhaustion region 16 that is produced can contain the long-pending active region of multiaspect more and improve the ability that suppresses converse electrical leakage stream, and the gap between the promptly adjacent exhaustion region 16 can effectively be reduced.
In sum, the utility model is by after forming the second conductive material zone at the semiconductor-based intralamellar part of first conductive material, can allow the electrical characteristic of Schottky diode be improved connecing face place formation exhaustion region and suppressing converse electrical leakage stream, make diode energy broader applications in other field.
More than be illustrative to description of the present utility model; and it is nonrestrictive; those skilled in the art is understood, and can carry out many modifications, variation or equivalence to it within spirit that claim limits and scope, but they will fall in the protection range of the present utility model all.
Claims (7)
1. one kind can be reduced converse electrical leakage stream and have the low forward Schottky diode structure of pressure drop, it is characterized in that, includes:
One first conductive material semiconductor substrate, form the guard ring of an annular in inside, this guard ring region surrounded one is an active region, forms a plurality of second conductive material zones of point-like arrangement that are in active region inside to produce exhaustion region at the semiconductor-based intralamellar part of first conductive material;
One oxide layer is covered in this first conductive material and partly leads substrate surface;
One metal level is covered in the active region of this oxide layer and the first conductive material semiconductor substrate, forms Schottky between this metal level and the first conductive material semiconductor substrate and contacts.
2. can reduce converse electrical leakage stream according to claim 1 and have the low forward Schottky diode structure of pressure drop, it is characterized in that, these a plurality of second conductive material zones are the point-like of matrix form and arrange.
3. can reduce converse electrical leakage stream according to claim 1 and have the low forward Schottky diode structure of pressure drop, it is characterized in that, these a plurality of second conductive material zones are the point-like of alternating expression and arrange.
4. as described in claim 3, can reduce converse electrical leakage stream and have the low forward Schottky diode structure of pressure drop, it is characterized in that, be datum mark and two second conductive material zones being adjacent when getting any second conductive material zone, the three is arranged in an equilateral triangle.
5. can reduce converse electrical leakage stream as described in each and have the low forward Schottky diode structure of pressure drop as claim 1 to 4, it is characterized in that this guard ring is made of the second conductive material semi-conducting material.
6. can reduce converse electrical leakage stream and have the low forward Schottky diode structure of pressure drop as described in claim 5, it is characterized in that this first conductive material is the N type semiconductor material, this second conductive material is the P type semiconductor material.
7. can reduce converse electrical leakage stream and have the low forward Schottky diode structure of pressure drop as described in claim 5, it is characterized in that this first conductive material is the P type semiconductor material, this second conductive material is the N type semiconductor material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202714462U CN201556625U (en) | 2009-12-09 | 2009-12-09 | Schottky diode structure capable of reducing reverse leakage current and having low forward voltage drop |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202714462U CN201556625U (en) | 2009-12-09 | 2009-12-09 | Schottky diode structure capable of reducing reverse leakage current and having low forward voltage drop |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201556625U true CN201556625U (en) | 2010-08-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202714462U Expired - Lifetime CN201556625U (en) | 2009-12-09 | 2009-12-09 | Schottky diode structure capable of reducing reverse leakage current and having low forward voltage drop |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201556625U (en) |
-
2009
- 2009-12-09 CN CN2009202714462U patent/CN201556625U/en not_active Expired - Lifetime
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100818 |
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| CX01 | Expiry of patent term |