CN201549493U - 一种微型二极管钼电极引线结构 - Google Patents

一种微型二极管钼电极引线结构 Download PDF

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Publication number
CN201549493U
CN201549493U CN 200920125892 CN200920125892U CN201549493U CN 201549493 U CN201549493 U CN 201549493U CN 200920125892 CN200920125892 CN 200920125892 CN 200920125892 U CN200920125892 U CN 200920125892U CN 201549493 U CN201549493 U CN 201549493U
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molybdenum electrode
lead wire
welding
lead
copper
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CN 200920125892
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欧绍德
周斌
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China Zhenhua Group Yongguang Electronics Coltd
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China Zhenhua Group Yongguang Electronics Coltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Abstract

本实用新型公开了一种微型二极管钼电极引线结构，该钼电极引线结构由引线(1)、铜焊片(2)和钼电极(3)组成，铜焊片(2)通过钎焊将引线(1)与钼电极(3)连接固定在一起；引线(1)为镍材料或铁镍合金材料构成的引线。本实用新型利用铜镍互溶的特性，通过一次钎焊(即钼电极、铜焊片、引线钎焊)即可将钼电极和引线连接固定在一起，这不但减少了一层焊料所占用空间，降低了生产成本，而且还简化了制作工艺，提高了产品的成品率和可靠性。本实用新型具有焊点体积小、制作工艺简单、成本低、产品可靠性高的优点。

Description

一种微型二极管钼电极引线结构
技术领域
本实用新型及一种微型二极管钼电极引线结构，属于微型二极管制作技术领域。
背景技术
微型二极管的电极引出端一方面需要导电性能和塑性优良的材料加工，确保在电子线路中具备较低的电损耗和可靠的机械连接及良好的工艺性，另一方面必须与硅芯片保持热膨胀性能的一致性，确保二极管满足严酷的可靠性环境试验要求。目前，现有技术中的微型二极管普遍采用钼材料作为电极，并通过两次钎焊的方式将钼电极和引线进行连接，即采用第一次钎焊将钼电极和铜焊片钎焊在一起，第二次钎焊将银铜焊片、钼电极和引线钎焊在一起，这种电极引线的焊接方式和结构所存在的缺陷是：1、焊点体积大，导致微型二极管外形尺寸很难满足规范要求；2、由于采用银铜焊片，从而提高了生产成本；3、制作工艺复杂，从而导致产品的可靠性降低和成品率降低。因此现有的微型二极管钼电极引线的制作方法和结构还是不够理想。
实用新型内容
本实用新型的目的是：提供一种焊点体积小、制作工艺简单、成本较低、产品可靠性较高的微型二极管钼电极引线结构，以克服现有技术的不足。
本实用新型是这样构成的：本实用新型的微型二极管钼电极引线结构为，该钼电极引线结构由引线、铜焊片和钼电极组成，铜焊片通过钎焊将引线与钼电极连接固定在一起。
上述引线为镍材料或铁镍合金材料构成的引线。
由于采用了上述技术方案，本实用新型利用铜镍互溶的特性，通过一次钎焊(即钼电极、铜焊片、引线钎焊)即可将钼电极和引线连接固定在一起，这不但减少了一层焊料所占用空间，降低了生产成本，而且还简化了制作工艺，提高了产品的成品率和可靠性；另外当从温升达到设定温度过程中时，本实用新型的镍引线(或铁镍合金引线)和铜焊片接触部位的两种材料相互扩散形成共熔合金直至平衡，同时也向钼电极的钼基体扩散及形成牢固的焊接层。因此，本实用新型与现有技术相比，本实用新型具有焊点体积小、制作工艺简单、成本低、产品可靠性高的优点。经试验证明，采用本实用新型生产的微型二极管外形尺寸能满足规范要求，其可靠性能满足二极管严酷的可靠性环境试验要求。
附图说明
图1为本实用新型的结构示意图。
具体实施方式
下面结合附图和实施例对本实用新型作进一步的说明。
本实用新型的实施例：本实用新型的微型二极管钼电极引线结构如图1所示，该钼电极引线结构由引线1、铜焊片2和钼电极3组成，引线1采用现有的镍材料或铁镍合金材料作为引线，铜焊片2通过钎焊将引线1与钼电极3连接固定在一起。制作时，其引线1、铜焊片2和钼电极3的尺寸大小按现有的规范要求进行确定，采用现有的镍或铁镍合金材料作为微型二极管的引线1，将用于微型二极管中与硅芯片接触的钼电极3通过铜焊片2按现有的钎焊方式一次性钎焊即可将钼电极3与引线1连接在一起。

Claims (2)

1.一种微型二极管钼电极引线结构，其特征在于：该钼电极引线结构由引线(1)、铜焊片(2)和钼电极(3)组成，铜焊片(2)通过钎焊将引线(1)与钼电极(3)连接固定在一起。
2.根据权利要求1所述的微型二极管钼电极引线结构，其特征在于：引线(1)为镍材料或铁镍合金材料构成的引线。
CN 200920125892 2009-12-04 2009-12-04 一种微型二极管钼电极引线结构 Expired - Lifetime CN201549493U (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102699466A (zh) * 2012-06-19 2012-10-03 中国振华集团永光电子有限公司 半导体电极组件的钎焊方法
CN104659111A (zh) * 2015-02-11 2015-05-27 中国振华集团永光电子有限公司（国营第八七三厂） 一种微型玻璃钝化封装整流二极管

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102699466A (zh) * 2012-06-19 2012-10-03 中国振华集团永光电子有限公司 半导体电极组件的钎焊方法
CN102699466B (zh) * 2012-06-19 2015-08-19 中国振华集团永光电子有限公司 半导体电极组件的钎焊方法
CN104659111A (zh) * 2015-02-11 2015-05-27 中国振华集团永光电子有限公司（国营第八七三厂） 一种微型玻璃钝化封装整流二极管

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Granted publication date: 20100811