CN201503314U - GHz sine-wave gated low-pass filtering infrared single-photon detector - Google Patents
GHz sine-wave gated low-pass filtering infrared single-photon detector Download PDFInfo
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- CN201503314U CN201503314U CN2009201876578U CN200920187657U CN201503314U CN 201503314 U CN201503314 U CN 201503314U CN 2009201876578 U CN2009201876578 U CN 2009201876578U CN 200920187657 U CN200920187657 U CN 200920187657U CN 201503314 U CN201503314 U CN 201503314U
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Abstract
The utility model relates to the field of quantum secure communication, feeble infrared detection and the like, in particular to an infrared single-photon detector, which comprises a sine-wave gating power source, an InGaAsP/InP avalanche photodiode circuit, a direct current voltage biasing circuit, a semiconductor temperature control circuit, a low-pass filter, a high-speed wide band amplifier, an ultra-high-speed comparator and a counter, wherein sine-wave of GHz outputted by the sine-wave gating power source is used as a gating signal of the InGaAsP/InP avalanche photodiode circuit, and the low-pass filter performs low-pass filtering on spike noise caused by junction capacitor differential effect simultaneously, thereby overcoming spike noise interference in the prior art, increasing detection flexibility to avalanche signals and being used for GHz high-speed infrared single-photon detection.
Description
Technical field
The utility model relates to fields such as quantum secret communication and faint infrared light detecting, is a kind of ultrared single-photon detector.
Background technology
Single-photon detector is a kind of optoelectronic device that is specifically designed to single photon detection, and the ultrared single-photon detector that is operated in communication wavelengths (1310-1550nm) is a key equipment in the quantum secret communication.Ultrared single-photon detector also is used for quantum calculation, optical ranging, Fibre Optical Sensor, fields such as atomic weak light detection and interference.
The method of infrared single photon detectors mainly contains following several at present: the infrared single photon detectors and the superconducting single-photon detection method that use avalanche photo diode (APD).Because during superconducting single-photon was surveyed, the working temperature of light activated element was extremely low, about about 4K, needs the refrigeration plant of huge costliness in the use, therefore the application cost height is difficult to promote in actual applications.At present, the main method of carrying out infrared single photon detectors is to adopt indium gallium arsenic indium phosphorus avalanche photodide (InGaAs/InP APD) as light activated element, and it is operated under the high-gain avalanche condition, realizes infrared single photon detectors.The working temperature of InGaAs/InP APD is about about-50 ℃, can utilize semiconductor refrigerating technology to realize.InGaAs/InP APD ultrared single-photon detector has the detection efficiency height, the low and advantages of simple structure and simple of dark counts.
For InGaAs/InP APD, the defective that exists in its material can become the trapping centre of charge carrier.After the avalanche effect of single photon by APD inspired a large amount of charge carriers, the charge carrier of part can be captured by these trapping centres, is released after after a while then.If this moment, APD possessed avalanche condition, these d/d charge carriers also can produce avalanche signal so, and this phenomenon is called the afterpulse effect.Usually ultrared single-photon detector is in order to reduce the influence of afterpulse effect, can be after snowslide phenomenon take place, and the APD bias voltage is reduced and continues several μ s times not survey, thereby reduce afterpulse.And for the high speed infrared single-photon detector, then can not use said method, in order to overcome the afterpulse effect under the high-speed inspection condition, must further reduce single photon at the inner photocurrent that produces of APD, can cause the avalanche optoelectronic signal very faint like this, therefore must further improve the gain amplifier of avalanche optoelectronic signal, improve detector sensitivity, thereby could effectively detect the avalanche optoelectronic signal.Because the junction capacity effect of APD, cause gate-control signal to pass through to produce spike noise behind the APD, if the gain amplifier of avalanche signal is too high, avalanche signal and noise signal are exaggerated simultaneously, to produce serious the interference to the detection of photoelectricity avalanche signal, this undesired signal is generally big 2 more than the order of magnitude than avalanche signal.The spike noise that how effectively to suppress the generation of APD junction capacity is the gordian technique of high speed infrared single-photon detector.
The utility model content
Technical problem to be solved in the utility model provides a kind of GHz (GHz) sine-wave gate-control low-pass ultrared single-photon detector, can effectively suppress the interference of spike noise to avalanche signal, improve the detection sensitivity of avalanche signal, be used for GHz high speed infrared single photon detection.
The technical scheme that the utility model adopted is as follows:
Gigahertz sine-wave gate-control low-pass filtering ultrared single-photon detector comprises the sine-wave gate-control power source, indium gallium arsenic indium phosphorus avalanche photodide circuit, DC voltage bias circuit, semiconductor temperature circuit, low-pass filter, the high-speed wideband amplifier, the ultrahigh-speed comparator sum counter, wherein:
The output terminal of sine-wave gate-control power source links to each other with the gate input end of indium gallium arsenic indium phosphorus avalanche photodide circuit, the output terminal of DC voltage bias circuit links to each other with the DC voltage offset side of indium gallium arsenic indium phosphorus avalanche photodide circuit, the semiconductor temperature circuit links to each other with indium gallium arsenic indium phosphorus avalanche photodide circuit, the output terminal of indium gallium arsenic indium phosphorus avalanche photodide circuit links to each other with the input end of low-pass filter, the output terminal of low-pass filter links to each other with the high-speed wideband amplifier input terminal, the output terminal of high-speed wideband amplifier links to each other with the input end of ultrahigh-speed comparator, and the input end of the output terminal sum counter of ultrahigh-speed comparator links to each other.
In the described Gigahertz sine-wave gate-control low-pass filtering ultrared single-photon detector:
Frequency with the output of sine-wave gate-control power source is the gate-control signal of the sine wave of GHz as indium gallium arsenic indium phosphorus avalanche photodide circuit, and the while is carried out low-pass filtering with the low-pass filter that cutoff frequency is lower than the gate-control signal frequency to the spike noise that the junction capacity differential effect by the indium gallium arsenic indium phosphorus avalanche photodide in the indium gallium arsenic indium phosphorus avalanche photodide circuit causes.
Good effect of the present utility model is: (1) single-photon detector operating rate height, frequency is greater than 1GHz.(2) low-pass filter suppresses effective to the gate undesired signal, can be better than 100dB, effectively improves detection sensitivity, helps reducing the afterpulse effect of detector, effectively improves the detection efficiency of detector.(3) simple in structure, cost is low.
Description of drawings
Fig. 1 is the utility model circuit structure block scheme.
Fig. 2 is an indium gallium arsenic indium phosphorus avalanche photodide circuit diagram.
Embodiment
Below in conjunction with accompanying drawing the utility model is further described.
Principle of the present utility model is: because the spike noise that the junction capacity differential effect of InGaAs/InP APD produces can produce extremely serious disturbance to faint avalanche optoelectronic signal, how effectively suppressing the gate-control signal interference is the gordian technique of GHz single photon detection.The spike noise that produces after the junction capacity of sine-wave gate-control signal through InGaAs/InP APD for GHz, its energy mainly is distributed on the fundamental frequency and frequency multiplication component of gate-control signal.For existing InGaAs/InP APD, its response time is the ns order of magnitude, and the energy distribution of avalanche signal mainly concentrates on below the 1GHz.For GHz sine-wave gate-control ultrared single-photon detector, its gate undesired signal energy mainly concentrates on more than the GHz, and the avalanche signal energy mainly concentrates on below the 1GHz, so use the low-pass filter of cutoff frequency about 1GHz, effective filtering spike noise, improve the detection sensitivity of photosignal, thereby reduce the afterpulse effect, improve detection efficiency.
As shown in Figure 1, Gigahertz sine-wave gate-control low-pass filtering ultrared single-photon detector, comprise sine-wave gate-control power source 1, indium gallium arsenic indium phosphorus avalanche photodide circuit 2, DC voltage bias circuit 3, semiconductor temperature circuit 4, low-pass filter 5, high-speed wideband amplifier 6, ultrahigh-speed comparator 7 sum counters 8, wherein:
The output terminal of sine-wave gate-control power source 1 links to each other with the gate input end of indium gallium arsenic indium phosphorus avalanche photodide circuit 2, the output terminal of DC voltage bias circuit 3 links to each other with the DC voltage offset side of indium gallium arsenic indium phosphorus avalanche photodide circuit 2, semiconductor temperature circuit 4 links to each other with indium gallium arsenic indium phosphorus avalanche photodide circuit 2, the output terminal of indium gallium arsenic indium phosphorus avalanche photodide circuit 2 links to each other with the input end of low-pass filter 5, the output terminal of low-pass filter 5 links to each other with the input end of high-speed wideband amplifier 6, the output terminal of high-speed wideband amplifier 6 links to each other with the input end of ultrahigh-speed comparator 7, and the input end of the output terminal sum counter 8 of ultrahigh-speed comparator 7 links to each other.
In the described Gigahertz sine-wave gate-control low-pass filtering ultrared single-photon detector:
Frequency with 1 output of sine-wave gate-control power source is the gate-control signal of the sine wave of GHz as indium gallium arsenic indium phosphorus avalanche photodide circuit 2, and the while is carried out low-pass filtering with 5 pairs of spike noises that caused by the junction capacity differential effect of the indium gallium arsenic indium phosphorus avalanche photodide 9 in the indium gallium arsenic indium phosphorus avalanche photodide circuit 2 of low-pass filter that cutoff frequency is lower than the gate-control signal frequency.
Sine-wave gate-control power source 1 is made up of high-frequency signal source and wideband power amplifer, the sine-wave gate-control signal is provided for indium gallium arsenic indium phosphorus avalanche photodide circuit 2, and its signal frequency is more than 1GHz, and output amplitude is 5 ~ 10Vp-p.
Indium gallium arsenic indium phosphorus avalanche photodide circuit 2 is made up of indium gallium arsenic indium phosphorus avalanche photodide 9, input build-out resistor R1, input coupling capacitance C1, current-limiting protection resistance R 2, output build-out resistor R3 and output coupling capacitor C2; and be positioned in the shielding box 10
The GHz sine-wave gate-control signal of sine-wave gate-control power source 1 output connects power supply ground end through input build-out resistor R1, connects the negative terminal of indium gallium arsenic indium phosphorus avalanche photodide 9 simultaneously through input coupling capacitance C1,
The anode of the dc offset voltage of DC voltage bias circuit 3 outputs links to each other through the negative terminal of current-limiting protection resistance R 2 with indium gallium arsenic indium phosphorus avalanche photodide 9,
The anode of indium gallium arsenic indium phosphorus avalanche photodide 9 connects power supply ground end through output build-out resistor R3, simultaneously through output coupling capacitor C2 output avalanche optoelectronic signal.
Semiconductor temperature circuit 4 is made up of singlechip controller, semiconductor chilling plate and radiator fan, and the shielding box 10 of placing indium gallium arsenic indium phosphorus avalanche photodide circuit is carried out temperature control, and the temperature control scope is-50 ℃ to-30 ℃, and temperature control stability is ± 0.1 ℃.
DC voltage bias circuit 3 is made up of the high-precision program control power supply, provide high pressure the anti-number of believing one side only for indium gallium arsenic indium phosphorus avalanche photodide circuit, output voltage is controlled by digital interface, and voltage range is 40 ~ 50V, minimum resolution 4mV, temperature stability is better than 1mV/ ℃.
Low-pass filter 5 is multistage LC passive microwave low-pass filter, and cutoff frequency is lower approximately by 10% than gate-control signal frequency, inserts loss less than 6dB, and attenuation outside a channel is greater than 80dB.
High-speed wideband amplifier 6 is the inverting amplifier of bandwidth 100MHz-3GHz, and gain is greater than 30dB, and peak power output is 10dBm.
Ultrahigh-speed comparator 7 is screened comparer for the hypervelocity level, is used to screen the avalanche optoelectronic signal, and its high tumble frequency is 5GHz, screen level-10 ~-adjustable in the 1000mV scope, it is output as Transistor-Transistor Logic level or NIM level, pulse width 10ns.
Counter 8 is the frequency counter of Transistor-Transistor Logic level or the input of NIM level, and the output signal of ultrahigh-speed comparator is counted.
The device model of the utility model partial circuit is:
Sine-wave gate-control power source 1 is made up of the N5181A model high-frequency signal source of U.S. Agilent company and 5865 model 12.5GHz wideband power amplifers of U.S. psec company, and output frequency is 1.6GHz, and output amplitude is the single sine wave of 6.2Vp-p.
DC voltage bias circuit 3 is made up of the GPD-3303D model programmable power supply of Goodwill electronics corporation, output voltage 44.9V, and resolution is 4mV, temperature stability is better than 1mV/ ℃.
The indium gallium arsenic indium phosphorus avalanche photodide 9 of indium gallium arsenic indium phosphorus avalanche photodide circuit 2 adopts the ETX40 model InGaAs/InP APD of U.S. JDSU company, the minimum 1.6GHz of bandwidth, avalanche voltage 46.2V.
Semiconductor temperature circuit 4 is made up of singlechip controller MSP430F149, semiconductor chilling plate and the radiator fan of TI company, indium gallium arsenic indium phosphorus avalanche photodide circuit is carried out temperature control, make the working temperature of indium gallium arsenic indium phosphorus avalanche photodide circuit be-35 ± 0.1 ℃.
Low-pass filter 5 is 2 * 15 grades of LC passive microwave low-pass filters, and 1dB corner frequency 1.45GHz inserts loss less than 5dB, and the 1.6GHz place decays to 103dB.
High-speed wideband amplifier 6 is the inverting amplifier of bandwidth 100MHz ~ 3GHz, and gain is greater than 30dB, and inband flatness is better than 10dB, and Maximum Output Level is 10dBm.
Ultrahigh-speed comparator 7 adopts 9307 model ultrahigh-speed comparators of U.S. ORTEC company, and the minimum pulse width of input pulse is 400ps, screens level and is-200mV.
Counter 8 adopts 9308 model counters of U.S. ORTEC company, has the time function of statistic analysis.
The concrete course of work is as follows: because response time of existing indium gallium arsenic indium phosphorus avalanche photodide circuit I nGaAs/InP APD is the ns magnitude, so the energy distribution of this avalanche optoelectronic signal mainly concentrates on below the 1GHz.Use the 1dB corner frequency effectively to suppress, thereby the avalanche optoelectronic signal is effectively purified as the spike noise that the sinusoidal wave power signal of 5 pairs of 1.6GHz frequencies of LC passive microwave low-pass filter of 1.45GHz produces after indium gallium arsenic indium phosphorus avalanche photodide 9 junction capacity effects.The avalanche optoelectronic signal uses ultrahigh-speed comparator to carry out level ratio and screens the avalanche optoelectronic signal after the high-speed wideband amplifier amplifies, and by counter the examination output signal of ultrahigh-speed comparator is counted then.
Claims (2)
1. Gigahertz sine-wave gate-control low-pass filtering ultrared single-photon detector, comprise sine-wave gate-control power source (1), indium gallium arsenic indium phosphorus avalanche photodide circuit (2), DC voltage bias circuit (3), semiconductor temperature circuit (4), low-pass filter (5), high-speed wideband amplifier (6), ultrahigh-speed comparator (7) sum counter (8) is characterized in that:
The output terminal of sine-wave gate-control power source (1) links to each other with the gate input end of indium gallium arsenic indium phosphorus avalanche photodide circuit (2), the output terminal of DC voltage bias circuit (3) links to each other with the DC voltage offset side of indium gallium arsenic indium phosphorus avalanche photodide circuit (2), semiconductor temperature circuit (4) links to each other with indium gallium arsenic indium phosphorus avalanche photodide circuit (2), the output terminal of indium gallium arsenic indium phosphorus avalanche photodide circuit (2) links to each other with the input end of low-pass filter (5), the output terminal of low-pass filter (5) links to each other with the input end of high-speed wideband amplifier (6), the output terminal of high-speed wideband amplifier (6) links to each other with the input end of ultrahigh-speed comparator (7), and the input end of the output terminal sum counter (8) of ultrahigh-speed comparator (7) links to each other.
2. sine-wave gate-control low-pass ultrared single-photon detector as claimed in claim 1 is characterized in that:
Frequency with sine-wave gate-control power source (1) output is the gate-control signal of the sine wave of GHz as indium gallium arsenic indium phosphorus avalanche photodide circuit (2), and the while is carried out low-pass filtering with the low-pass filter (5) that cutoff frequency is lower than the gate-control signal frequency to the spike noise that the junction capacity differential effect by the indium gallium arsenic indium phosphorus avalanche photodide (9) in the indium gallium arsenic indium phosphorus avalanche photodide circuit (2) causes.
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| CN2009201876578U CN201503314U (en) | 2009-09-21 | 2009-09-21 | GHz sine-wave gated low-pass filtering infrared single-photon detector |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103115688A (en) * | 2013-01-24 | 2013-05-22 | 南京大学 | Gigahertz sine gating near-infrared single photon detector with tunable frequency |
| CN103674288A (en) * | 2013-12-03 | 2014-03-26 | 华东师范大学 | Single-photon detection system and temperature control method thereof |
| GB2622244A (en) * | 2022-09-08 | 2024-03-13 | Toshiba Kk | Photon detection system and method |
-
2009
- 2009-09-21 CN CN2009201876578U patent/CN201503314U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103115688A (en) * | 2013-01-24 | 2013-05-22 | 南京大学 | Gigahertz sine gating near-infrared single photon detector with tunable frequency |
| CN103115688B (en) * | 2013-01-24 | 2015-04-01 | 南京大学 | Gigahertz sine gating near-infrared single photon detector with tunable frequency |
| CN103674288A (en) * | 2013-12-03 | 2014-03-26 | 华东师范大学 | Single-photon detection system and temperature control method thereof |
| GB2622244A (en) * | 2022-09-08 | 2024-03-13 | Toshiba Kk | Photon detection system and method |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100609 Termination date: 20130921 |