CN201438689U - High and low power combining circuit for RF power amplifier - Google Patents
High and low power combining circuit for RF power amplifier Download PDFInfo
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- CN201438689U CN201438689U CN200920055959XU CN200920055959U CN201438689U CN 201438689 U CN201438689 U CN 201438689U CN 200920055959X U CN200920055959X U CN 200920055959XU CN 200920055959 U CN200920055959 U CN 200920055959U CN 201438689 U CN201438689 U CN 201438689U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The utility model discloses a high and low power combining circuit for a RF power amplifier, which is connected between input signals and a load, and comprises a high-power mode channel and a low-power mode channel which are arranged in parallel, and a voltage control circuit for selecting and switching the work of the two channels and controlling the work of the two channels, wherein the high-power mode channel comprises a second matching network, a driving stage, a third matching network and a power stage which are sequentially connected, and the low-power mode channel comprises a fifth matching network, a low-power amplifier and a sixth matching network which are sequentially connected; and the control circuit is connected with the power stage, the driving stage and the low-power amplifier. By the independent design of a high-power amplifier and the low-power amplifier, the utility model can optimize the efficiency and other indicators respectively in high and low power modes, and simultaneously improves the efficiency in the high and low output power modes, effectively improves the average efficiency of the RF power amplifier, prolongs the service time of batteries, and has simple circuit structure and low cost.
Description
Technical field
The utility model relates to the radio-frequency power amplifier applied technical field, specifically is meant the high and low power synthesis circuit that is used in combination with radio-frequency power amplifier.
Background technology
Radio-frequency power amplifier is widely used in various wireless telecommunications systems and the electronic system, as mobile phone, portable terminal etc., it is used for modulated radiofrequency signal is amplified to the certain power value as the critical component in the transmitter, is transferred to antenna again and launches.When mobile phone will be transmitted to the signal after the modulation the far base station of distance, can receive enough signal strength signal intensities in order to guarantee the base station, need mobile phone signal to be launched with a very high power grade; On the contrary, mobile phone is near more from the base station, and required transmitting power is just more little.As shown in Figure 1, in a TD-SCDMA/WCDMA/CDMA standard handheld terminal, no matter be in the city or the suburb, during the radio-frequency power amplifier most of the time works in, under the low power level.Therefore the power loss that reduces radio-frequency power amplifier itself promptly improves efficient under the efficient, particularly low power level of radio-frequency power amplifier (in the TD-SCDMA/WCDMA/CDMA standard be the high-low power switching point with 16dBm) for the particularly key that just seems the service time that prolongs battery.Efficient when all only paying close attention to high-output power usually in traditional Design of RF Power Amplifier, thereby its average efficiency is very low, has had a strong impact on the service time of battery.
Efficient when present Design of RF Power Amplifier is all only paid close attention to high-output power usually, as power added efficiency (the English by name power added efficiency of TD-SCDMA/WCDMA/CDMA standard radio-frequency power amplifier when power output is 28dBm, be abbreviated as PAE) reach 40%, but the PAE when hanging down power output is very low, required power output probability distribution is as can be known under actual operating position by mobile phone, the radio-frequency power amplifier most of the time is all with low power level work, so in order to prolong the air time of mobile phone effectively under limited battery capacity, the efficient that improves when hanging down power output just becomes very crucial.
In traditional Design of RF Power Amplifier, efficient when hanging down power output in order to improve, the normal dynamic power supplies control technology and Doherty load-modulate technology and dynamic bias control technology of adopting raised the efficiency, the above two are owing to its complicated circuit structure and higher production cost seem not too practical, though the dynamic bias control technology has advantages such as the simple and cost of circuit structure is lower, but adopting the radio-frequency power amplifier of this method is that PAE is still less than 10%, so that it is difficult to satisfy high efficiency requirement at the power added efficiency of low power output (being generally 16dBm).
The utility model content
Under low output power mode, the problem that power added efficiency is low provides a kind of New-type radio-frequency power amplifier that can all can realize greater efficiency under high and low power modes of operation to the utility model at existing radio-frequency (RF) power amplifier circuit.
For achieving the above object, the technical scheme taked of the utility model is:
A kind of high-low power combining circuit for radio-frequency power amplifier is provided, be connected between input signal and the load, comprise parallel high-power mode passage, low-power mode passage and be used to select the voltage control circuit that switches two passage work and two passage work are controlled; Wherein the high-power mode passage comprises second matching network, driving stage, the 3rd matching network and the power stage that connects in turn; Described low-power mode passage comprises the 5th matching network, low power amplifier and the 6th matching network that connects in turn; Described control circuit all is connected with power stage, driving stage and low power amplifier.
A kind of preferred scheme is, described low-power mode passage comprises further by switch element and be connected in the 7th matching network between the 6th matching network output and the load that described switch element is controlled by voltage control circuit.
Another kind of preferred scheme is: described low-power mode passage further comprises the 7th matching network that is connected with the low power amplifier input by switch element and the 8th matching network that is connected with the low power amplifier output by switch element, and described two switch elements all are controlled by voltage control circuit.
Concrete, described voltage control circuit can select to switch high and low power mode passage work by a switching device.
The utility model also can be taked such scheme: a kind of high-low power combining circuit for radio-frequency power amplifier, be connected between input signal and the load, comprise high-power mode passage, low-power mode passage and be used to select the voltage control circuit that switches two passage work and two passage work are controlled; Described high-power mode passage comprises driving stage, second matching network, the 3rd matching network, power stage and the 4th matching network that connects in turn; Described low-power mode passage comprises the 6th matching network, and described the 6th matching network is connected between the second matching network output and the 4th matching network output.
In order to optimize the utility model circuit performance, combiner circuit described in the such scheme and signal input part also can insert first matching network that is used for input impedance matching, also can insert the 4th matching network that is used for the output impedance coupling with load end.
Compared with prior art, the utlity model has following advantage:
1, the utlity model has two kinds of output modes of high and low power, can effectively improve the average efficiency of radio-frequency power amplifier, prolong the service time of battery;
2, the utility model can be optimized respectively efficient and other indexs under high and low power modes of operation respectively, and circuit structure is simple, and cost is low.
Description of drawings
Fig. 1 is the probability of use distribution map of mobile phone power output in the TD-SCDMA/WCDMA/CDMA network communication system;
Fig. 2 is first kind of preferred embodiment circuit diagram of the utility model;
Fig. 3 is second kind of preferred embodiment circuit diagram of the utility model;
Fig. 4 is the third preferred embodiment circuit diagram of the utility model;
Fig. 5 is the gain characteristic figure that adopts the radio-frequency power amplifier of high and low power synthetic technique;
Fig. 6 is the efficiency characteristic figure of the radio-frequency power amplifier of the high and low power synthetic technique of employing.
Embodiment
For ease of it will be appreciated by those skilled in the art that the utility model is described in further detail below in conjunction with drawings and Examples.
Fig. 2 is first kind of preferred embodiment circuit diagram of the utility model.As figure, matching network 2, driving stage, matching network 3, power stage compose in series the high-power mode passage in proper order; Matching network 5, low power amplifier, matching network 6 orders compose in series the low-power mode passage.High-power mode passage and low-power mode passage are connected in parallel between matching network 1 and the matching network 4, and matching network 4 other ends are connected with load; Control switch SW1 is serially connected with between matching network 1, matching network 2 and the matching network 5; Control switch SW2 and SW3 are connected on low power amplifier input, the output, and matching network 7 is connected in the other end of switch SW 2, and matching network 8 is connected in the other end of switch SW 3.Voltage control circuit is connected with control switch SW1, SW2, SW3 and driving stage, power stage, low power amplifier respectively.During concrete enforcement, SW1 adopts the form of single-pole double-throw switch (SPDT), also can be realized by two single-pole single-throw switch (SPST)s; Switch SW 2 and SW3 are connected on the low-power mode passage with parallel form.
This embodiment implementation is to adopt parallel two-way amplifier architecture that input signal is amplified, by voltage control circuit control switch SW1, SW2 and SW3 radiofrequency signal is switched, and the break-make of control amplifier realizes high and low power mode work.Switch SW 1 is serially connected with between matching network 1, matching network 2 and the matching network 5, works to switch high and low power modes of operation.Driving stage and low power amplifier all can be made of one or more levels amplifier, and it can be designed to the Gain Adjustable form.
When high-power mode was worked, voltage control circuit produced control voltage and makes driving stage and power stage conducting, and low power amplifier turn-offs.SW1 switches to node 2, SW2, SW3 are closed also to link to each other with matching network 8 with matching network 7 respectively, input signal is transferred to the high power module through matching network 1, arrive load by matching network 4 again, at this moment SW2 and matching network 7 are mainly used in the isolation (can remove) when improving high-power mode work when isolation meets the demands, matching network 7 is made of a shunt capacitance usually, and the path over the ground that forms when preventing switch SW 2 conductings exerts an influence to other modules; SW3 produces a Low ESR with matching network 8 when high-power mode is worked, and because the output impedance of the low power amplifier of having no progeny in the pass is higher relatively, so Zout1 is mainly determined by the impedance of SW3 and matching network 8, low-resistance Zout1 converts a high resistant (with respect to Zin_load) to through matching network 6, thereby guarantee that the most of matching network 4 that flows into of output signal after power stage is amplified passes to load, the effect of matching network 8 and matching network 7 are basic identical, usually constitute by a shunt capacitance, it also can be made of in the LC of operating frequency series circuit a resonance, and the function of matching network 4 is mainly used in load resistance is transformed into a lower impedance; Matching network 3 is as inter-stage matching network, and impedance transformation to a higher impedance that is used for seeing into from the power stage input is to improve Amplifier Gain; Matching network 1, matching network 2 are used for the input coupling with matching network 5.When low-power mode is worked, the SW1 node 3 that leads, SW2 and SW3 disconnect, and input signal is transferred to the low-power mode passage through matching network 1, is delivered to load by matching network 4 again.At this moment matching network 6 is used for converting impedance Z in_load to a higher impedance, to improve low-power mode work limitation rate; Matching network 1 is used for finishing jointly the input coupling with matching network 5.When physical circuit was realized, switch in the scheme and matching network can be accepted or rejected according to actual conditions.
Fig. 3 is second kind of preferred embodiment circuit diagram of the utility model.This embodiment is that with difference embodiment illustrated in fig. 2 switch SW 2 is connected on the low-power mode passage with the form of connecting.Switch SW 1 is connected between matching network 1, matching network 2 and the matching network 5, switch SW 2 is connected between matching network 6 and the matching network 7, driving stage is connected between matching network 2 and the matching network 3, power stage is connected between matching network 3 and the matching network 4, and low power amplifier is connected between matching network 5 and the matching network 6.Scheme shown in Figure 3 is that with the difference of scheme shown in Figure 2 switch SW 2 adopts the form of connecting to be connected between matching network 6 and the matching network 7.According to the actual design situation, can accept or reject matching network 6, SW2 turn-offs and helps to increase isolation to reduce the leakage of power stage output signal when high-power mode, so just there is no need to add as the switch SW among Fig. 23 and strengthen isolation, all the other descriptions of scheme are identical with scheme shown in Figure 2.
Fig. 4 is the third preferred embodiment circuit diagram of the utility model.This embodiment adopts the technology of bypass power stage module to realize high and low power mode, and according to different situations different working methods can be arranged.This embodiment is made up of driving stage, power stage, six matching networks and voltage control circuit, driving stage is connected between matching network 1 and the matching network 2, and control its operating state by voltage control circuit, power stage is connected between matching network 3 and the matching network 4, and control its break-make by voltage control circuit, matching network 5 is connected between matching network 4 and the load, and matching network 6 is connected between the intersection point of the intersection point of matching network 2, matching network 3 and matching network 4, matching network 5.When high-power mode is worked, driving stage (can comprise casacade multi-amplifier) is controlled conducting simultaneously with power stage by voltage control circuit, input signal is through matching network 1, driving stage, matching network 2, matching network 3, power stage, matching network 4, matching network 5 is delivered to load high-output power is provided, at this moment matching network 3, matching network 4 and the design of matching network 6 should satisfy impedance relationship: ZinL＞＞ZinH, ZoutL＞＞Zin_load, greater than twice or more than the twice, could guarantee the signal overwhelming majority ingoing power level after driving stage is amplified like this, and the overwhelming majority of the signal after power stage is amplified flows into matching network 4 and passes to load; When low-power mode is worked, voltage control circuit switch-off power level module, input signal enters driving stage through matching network 1, signal after driving stage is amplified is passed to load and realizes low-power mode through matching network 2, matching network 6, matching network 5, at this moment the design of matching network 3, matching network 4 and matching network 6 should satisfy impedance relationship: ZinH＞＞ZinL, greater than twice or more than the twice, matching network 1, matching network 2, matching network 5 are respectively applied for input, inter-stage and output coupling.When different designs, Fig. 4 also has another working method: when high-power mode is worked, by the signal after the driving stage amplification while ingoing power level and matching network 6 behind matching network 2, transfer to matching network 5 and load again; When low-power mode is worked, directly transfer to matching network 5 by the signal after the driving stage amplification, thereby realize that high and low power is synthetic from matching network 6; Under this working method, when high-power mode is worked,, thereby do not have so strict relatively to the designing requirement of matching network owing to signal will transmit simultaneously from power stage and matching network 6.When physical circuit was realized, switch in the scheme and matching network can be accepted or rejected according to actual conditions.
Fig. 5 is the gain characteristic figure that adopts the radio-frequency power amplifier of high and low power synthesis circuit.From figure as can be seen, radio-frequency power amplifier is when the high-output power pattern, and radio-frequency power amplifier has high-gain; And when hanging down output power mode, in order to reduce power consumption, to raise the efficiency, have only the one-level transistor that input signal is amplified on the signalling channel usually, thereby it has lower gain.
Fig. 6 is the efficiency characteristic figure of the radio-frequency power amplifier of the high and low power synthesis circuit of employing.Longitudinal axis table added efficiency wherein, transverse axis table power output, left side curve representation low-power mode lower curve, the right curve representation high-power mode lower curve.Because the use of high and low power synthetic technique, from figure as can be seen, radio-frequency power amplifier obviously has much higher power added efficiency when hanging down power output.Therefore, launch terminal only need be exported less power can obtain higher power added efficiency, has reduced the power output of launch terminal, reaches to prolong the launch terminal purpose of service time.
The above only is the preferable embodiment of the utility model, it should be noted that, not breaking away under the utility model design prerequisite its any minor variations of doing and being equal to replacement, all should belong to protection range of the present utility model.
Claims (9)
1. high-low power combining circuit for radio-frequency power amplifier, be connected between input signal and the load, it is characterized in that, comprise parallel high-power mode passage, low-power mode passage and be used to select the voltage control circuit that switches two passage work and two passage work are controlled.
2. high-low power combining circuit for radio-frequency power amplifier according to claim 1 is characterized in that, described high-power mode passage comprises second matching network, driving stage, the 3rd matching network and the power stage that connects in turn; Described low-power mode passage comprises the 5th matching network, low power amplifier and the 6th matching network that connects in turn; Described control circuit all is connected with power stage, driving stage and low power amplifier.
3. high-low power combining circuit for radio-frequency power amplifier according to claim 2, it is characterized in that, described low-power mode passage further comprises the 7th matching network that is connected with the low power amplifier input by switch element and the 8th matching network that is connected with the low power amplifier output by switch element, and described two switch elements all are controlled by voltage control circuit.
4. high-low power combining circuit for radio-frequency power amplifier according to claim 2, it is characterized in that, described low-power mode passage comprises further by switch element and is connected in the 7th matching network between the 6th matching network output and the load that described switch element is controlled by voltage control circuit.
5. according to claim 3 or 4 described high-low power combining circuit for radio-frequency power amplifier, it is characterized in that described voltage control circuit selects to switch high and low power mode passage work by switching device.
6. high-low power combining circuit for radio-frequency power amplifier according to claim 5 is characterized in that, described switching device is made of a single-pole double-throw switch (SPDT) or two single-pole single-throw switch (SPST)s.
7. high-low power combining circuit for radio-frequency power amplifier according to claim 5 is characterized in that, described driving stage and low power amplifier constitute by one or more levels amplifier.
8. high-low power combining circuit for radio-frequency power amplifier according to claim 1 is characterized in that, described high-power mode passage comprises driving stage, second matching network, the 3rd matching network, power stage and the 4th matching network that connects in turn; Described low-power mode passage comprises the 6th matching network, and described the 6th matching network is connected between the second matching network output and the 4th matching network output.
9. according to claim 5 or 8 described high-low power combining circuit for radio-frequency power amplifier, it is characterized in that, described combiner circuit and signal input part also are connected with first matching network that is used for input impedance matching, and described combiner circuit and load end also are connected with the 4th matching network that is used for the output impedance coupling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920055959XU CN201438689U (en) | 2009-04-30 | 2009-04-30 | High and low power combining circuit for RF power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920055959XU CN201438689U (en) | 2009-04-30 | 2009-04-30 | High and low power combining circuit for RF power amplifier |
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| CN201438689U true CN201438689U (en) | 2010-04-14 |
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| CN200920055959XU Expired - Fee Related CN201438689U (en) | 2009-04-30 | 2009-04-30 | High and low power combining circuit for RF power amplifier |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103166579A (en) * | 2011-12-08 | 2013-06-19 | 三星电机株式会社 | Amplifying apparatus |
| CN103312272A (en) * | 2012-03-14 | 2013-09-18 | 浦项工科大学校产学协力团 | Multi-mode doherty power amplifier |
| CN103701412A (en) * | 2013-12-31 | 2014-04-02 | 天津朗波微电子有限公司 | Circuit for realizing high and low power of linear power amplifier by taking CMOS (complementary metal-oxide-semiconductor) transistors as switches |
| CN103986424A (en) * | 2013-02-13 | 2014-08-13 | 富士通半导体股份有限公司 | Amplifier and wireless communication device |
| US10230344B2 (en) | 2015-02-15 | 2019-03-12 | Shanghai Vanchip Technologies Co., Ltd. | Adjustable gain power amplifier, gain adjustment method and mobile terminal |
| CN111293999A (en) * | 2020-05-12 | 2020-06-16 | 浙江铖昌科技有限公司 | Broadband reconfigurable power amplifier and radar system |
| CN116346050A (en) * | 2023-05-24 | 2023-06-27 | 广州慧智微电子股份有限公司 | Power amplifier system and amplifier |
| WO2024083037A1 (en) * | 2022-10-20 | 2024-04-25 | 维沃移动通信有限公司 | Radio frequency circuit and electronic device |
-
2009
- 2009-04-30 CN CN200920055959XU patent/CN201438689U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103166579A (en) * | 2011-12-08 | 2013-06-19 | 三星电机株式会社 | Amplifying apparatus |
| CN103312272A (en) * | 2012-03-14 | 2013-09-18 | 浦项工科大学校产学协力团 | Multi-mode doherty power amplifier |
| CN103312272B (en) * | 2012-03-14 | 2016-06-01 | 浦项工科大学校产学协力团 | Multi-mode doherty power amplifier |
| CN103986424A (en) * | 2013-02-13 | 2014-08-13 | 富士通半导体股份有限公司 | Amplifier and wireless communication device |
| CN103986424B (en) * | 2013-02-13 | 2017-03-01 | 株式会社索思未来 | Amplifier and Wireless Telecom Equipment |
| CN103701412A (en) * | 2013-12-31 | 2014-04-02 | 天津朗波微电子有限公司 | Circuit for realizing high and low power of linear power amplifier by taking CMOS (complementary metal-oxide-semiconductor) transistors as switches |
| CN103701412B (en) * | 2013-12-31 | 2017-01-11 | 天津朗波微电子有限公司 | Circuit for realizing high and low power of linear power amplifier by taking CMOS (complementary metal-oxide-semiconductor) transistors as switches |
| US10230344B2 (en) | 2015-02-15 | 2019-03-12 | Shanghai Vanchip Technologies Co., Ltd. | Adjustable gain power amplifier, gain adjustment method and mobile terminal |
| CN111293999A (en) * | 2020-05-12 | 2020-06-16 | 浙江铖昌科技有限公司 | Broadband reconfigurable power amplifier and radar system |
| CN111293999B (en) * | 2020-05-12 | 2020-08-28 | 浙江铖昌科技有限公司 | Broadband reconfigurable power amplifier and radar system |
| WO2024083037A1 (en) * | 2022-10-20 | 2024-04-25 | 维沃移动通信有限公司 | Radio frequency circuit and electronic device |
| CN116346050A (en) * | 2023-05-24 | 2023-06-27 | 广州慧智微电子股份有限公司 | Power amplifier system and amplifier |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100414 Termination date: 20160430 |