CN201381361Y - Organic metal chemical vapor deposition device - Google Patents
Organic metal chemical vapor deposition device Download PDFInfo
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- CN201381361Y CN201381361Y CN200920154796U CN200920154796U CN201381361Y CN 201381361 Y CN201381361 Y CN 201381361Y CN 200920154796 U CN200920154796 U CN 200920154796U CN 200920154796 U CN200920154796 U CN 200920154796U CN 201381361 Y CN201381361 Y CN 201381361Y
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- Prior art keywords
- reaction chamber
- vapor deposition
- chemical vapor
- chamber
- deposition device
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- Expired - Lifetime
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 title abstract description 10
- 239000002184 metal Substances 0.000 title abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims abstract description 40
- 230000005674 electromagnetic induction Effects 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 16
- 229910021529 ammonia Inorganic materials 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 32
- 239000000758 substrate Substances 0.000 description 14
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 125000002524 organometallic group Chemical group 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000001149 thermolysis Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OCZPOJZKHCBXPQ-UHFFFAOYSA-N [Mg]C1CCCC1 Chemical compound [Mg]C1CCCC1 OCZPOJZKHCBXPQ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011033 desalting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000004861 thermometry Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
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Abstract
The utility model provides an organic metal chemical vapor deposition device, which can obviate damages to the production apparatus and the manufactured device caused by ammonia at high temperature in the prior organic metal chemical vapor deposition process. The organic metal chemical vapor deposition device comprises a control system, a gas mixing system, a transfer chamber, a reaction chamber and a tail gas processing system, wherein the gas mixing system, the transfer chamber and the tail gas processing system are respectively communicated with the reaction chamber. The organic metal chemical vapor deposition device is characterized in that the reaction chamber includes a front reaction chamber and a rear reaction chamber; and the temperature of the front reaction chamber is kept within the range from 600 DEG C to 1100 DEG C.
Description
Technical field
The utility model relates to a kind of Metalorganic chemical vapor deposition device that is used for the growing metal nitride.
Background technology
With gan (GaN) is that the III-V group iii v compound semiconductor material of representative has good optics, electricity, thermodynamic behaviour.This series material high temperature high power microelectronic device, bluish-green and violet light device, information show storage and read, there is wide application prospect in fields such as wear-resisting opticinstrument, LED industry.The main growth method of III-V group iii v compound semiconductor material is Metalorganic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, be called for short MOCVD), its a kind of vapor phase epitaxy technique for growing up the seventies in last century is widely used in the preparation of multiple thin-film material.
As shown in Figure 1, existing MOCVD device 10 comprises a Controlling System 11, a gas mixing system 12, a transfer chamber 13, a reaction chamber 14 and an exhaust treatment system 15.One gas mixing system 12, a transfer chamber 13, a reaction chamber 14, and an exhaust treatment system 15 by Controlling System and mutual conduction.Wherein, be provided with control PLC, pressure controller, infrared rays optical fiber temperature indicator, each item of digital and simulation output receiver module in the Controlling System 11, in order to pneumatic valve member in the pilot-gas mixing system open and close, the signal output of polarity formula flow director and reception, the output of electronic pressure controller signals and receive, every sensing component signal shows, warning signal shows and auto-programming is carried out the extension prescription.Be provided with various pneumatic valve member in the gas mixing system 12, polarity formula flow director, electronic pressure controller, the kind flow of main formula control current-carrying gas, enters the mixing of pressure size before the reaction chamber, every unstripped gas at the opening or closing of various unstripped gases, flow size.Can install the purity of dew point detector additional, guarantee that raw material can not be subjected to water, oxygen contamination in order to the monitoring current-carrying gas.Transfer chamber 13 is used for growth substrates, sends in the reaction chamber 14 as Sapphire Substrate (Sapphire) etc.Reaction chamber 14 is provided with reaction chamber pump, gas leakage detector, transfer chamber pump, reaction chamber pipe, reaction chamber water cooler, strainer, infrared thermometry device, pressure warning unit, throttling valve, heating graphite carrier, all kinds of quartz ware.Also be provided with high hot heating unit in the reaction chamber, as high-frequency induction heating apparatus, heated substrate is decomposed unstripped gas, carries out chemical vapour deposition and the growing semiconductor material layer on substrate.Exhaust treatment system 15 is made up of eluting column, acidity, alkalescence, poisonous gas collection device, particle collector and exhaust desalting equipment usually, so that the toxic substance concentration of reaction back discharger reaches below the state emission standard.
In the Metalorganic chemical vapor deposition process, reactant gases and organo-metallic raw material gases such as ammonia, nitrogen, hydrogen enter reaction chamber 14 after gas mixing system 12 becomes mixed gas.Sapphire Substrate enters reaction chamber 14 by transfer chamber 13.Heating units in the reaction chamber 14 are heated to about 1100 ℃ of high temperature with substrate, make reactant gases and unstripped gas carry out chemical vapour deposition on substrate and generate the semiconductor layer of metal nitride.Wherein, feed organo-metallic Ga gas, deposition GaN layer further deposits P type GaN layer, N type GaN layer by mixing organic metal M g, organo-metallic Al gas etc. on substrate.
Yet, gaseous ammonia must just can decomposite under about 1100 ℃ of high temperature and be used for the N ion, and ammonia has strongly-acid under hot environment, not only damage noble metal components and heater strip in the reaction chamber 14 easily, and damage Sapphire Substrate easily, thereby cause the instability of production unit and prepared semiconducter device character.So the surface of general Sapphire Substrate all will be passed through silicon carbide (SiC) and handle, but this processing method still exists many technical difficulty, and required expense is higher.Moreover the H ion that the ammonia thermolysis goes out combines with Mg, generates Mg-H misfit body (Complex), makes Mg lose acceptor (P typeization) characteristic and produces the P type GaN layer of high resistance, damages semiconductor layer character.Thereby need under about 400 ℃ of nitrogen atmosphere, carry out activation treatment, make dehydrogenation among the Mg-H.
Summary of the invention
The purpose of this utility model is, at deficiency of the prior art, provides a kind of Metalorganic chemical vapor deposition device.The Metalorganic chemical vapor deposition device that the utility model provides comprises a Controlling System, a gas mixing system, a transfer chamber, a reaction chamber and an exhaust treatment system, gas mixing system, transfer chamber, exhaust treatment system are communicated with reaction chamber respectively, it is characterized in that: a reaction chamber and an afterreaction chamber before this reaction chamber comprises one, preceding reaction chamber are that temperature remains on the thermostatic chamber in 600 ℃ of-1100 ℃ of scopes.Preceding reaction chamber is connected with gas mixing system, and preceding reaction chamber, transfer chamber, exhaust treatment system are communicated with the afterreaction chamber respectively.The indoor electromagnetic induction heater that is provided with of afterreaction.
In this device,, make the mixed gas that enters the afterreaction chamber remove strongly-acid because ammonia decomposes in advance in preceding reaction chamber.Thereby the advantage of this Metalorganic chemical vapor deposition device is:
(1) because no strong acid corrodes, the heater strip in the afterreaction chamber and other valuable part need not frequent replacing, and reach the demand that significantly reduces cost.
(2) Sapphire Substrate need not add the isolated strong acid of plating silicon carbide (SiC) and corrodes, and except that reducing cost, is difficult for impairedly owing to Sapphire Substrate yet, more increases product stability and controllability.
(3) no ammonia (NH
3) under the hot environment, magnesium atom and hydrogen atom (Mg-H) can not form bond, need not the high-temperature activation step, just can obtain the P type gan of low resistance easily.
Description of drawings
Figure 1 shows that existing Metalorganic chemical vapor deposition device block diagram; And
Figure 2 shows that Metalorganic chemical vapor deposition device block diagram provided by the utility model.
Embodiment
As shown in Figure 2, Metalorganic chemical vapor deposition device 20 of the present utility model comprises a Controlling System 21, a gas mixing system 22, a transfer chamber 23, one preceding reaction chamber 26, an afterreaction chamber 24, reaches an exhaust treatment system 25.Reaction chamber 26 before gas mixing system 22, the transfer chamber 23,, an afterreaction chamber 24, and an exhaust treatment system 25 between under Controlling System 21 controls, be communicated with successively.Wherein preceding reaction chamber 26 is a thermostatic chamber, and preferably temperature range is 600 ℃-1100 ℃.In afterreaction chamber 24, be provided with electromagnetic induction heater (figure does not show), by regulating height and its heating stability of frequency may command of coil in the electromagnetic induction heater.
In the Metalorganic chemical vapor deposition process, reactant gases and organo-metallic raw material gases such as ammonia, nitrogen, hydrogen, reaction chamber 26 before after gas mixing system 22 becomes mixed gas, entering.Cracked ammonium in advance under the temperature action of preceding reaction chamber 26, making mixed gas is non-strongly-acid, and produces the N ion.Then the mixed gas after the disaggregating treatment is fed afterreaction chamber 24.Sapphire Substrate enters afterreaction chamber 24 by transfer chamber 23.Heat Sapphire Substrate under the effect of the heating unit in afterreaction chamber 24, the thermolysis thereon of organo-metallic thing goes out the N ionic bond in metal ion and the gas, and grows metal nitride film.Reacted waste gas is discharged after exhaust treatment system 25 is handled.The organo-metallic thing that uses in the utility model comprises trimethyl-gallium (TMGa), trimethyl aluminium (TMAl), trimethyl indium () and two cyclopentyl magnesium (CP2Mg).
Claims (3)
1, a kind of Metalorganic chemical vapor deposition device comprises a Controlling System, a gas mixing system, a transfer chamber, a reaction chamber and an exhaust treatment system, gas mixing system, transfer chamber, exhaust treatment system are communicated with reaction chamber respectively, it is characterized in that: a reaction chamber and an afterreaction chamber before this reaction chamber comprises one, preceding reaction chamber are that temperature remains on the thermostatic chamber in 600 ℃ of-1100 ℃ of scopes.
2, Metalorganic chemical vapor deposition device as claimed in claim 1 is characterized in that, preceding reaction chamber is connected with gas mixing system, and preceding reaction chamber, transfer chamber, exhaust treatment system are communicated with the afterreaction chamber respectively.
3, Metalorganic chemical vapor deposition device as claimed in claim 1 is characterized in that, the indoor electromagnetic induction heater that is provided with of afterreaction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920154796U CN201381361Y (en) | 2009-05-21 | 2009-05-21 | Organic metal chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920154796U CN201381361Y (en) | 2009-05-21 | 2009-05-21 | Organic metal chemical vapor deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201381361Y true CN201381361Y (en) | 2010-01-13 |
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ID=41524837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200920154796U Expired - Lifetime CN201381361Y (en) | 2009-05-21 | 2009-05-21 | Organic metal chemical vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201381361Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107904659A (en) * | 2017-11-23 | 2018-04-13 | 西北工业大学 | A kind of epitaxial growth equipment of graphene |
-
2009
- 2009-05-21 CN CN200920154796U patent/CN201381361Y/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107904659A (en) * | 2017-11-23 | 2018-04-13 | 西北工业大学 | A kind of epitaxial growth equipment of graphene |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100113 |