CN201327524Y - High-voltage heavy-current amplifier circuit - Google Patents
High-voltage heavy-current amplifier circuit Download PDFInfo
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- CN201327524Y CN201327524Y CN 200820222528 CN200820222528U CN201327524Y CN 201327524 Y CN201327524 Y CN 201327524Y CN 200820222528 CN200820222528 CN 200820222528 CN 200820222528 U CN200820222528 U CN 200820222528U CN 201327524 Y CN201327524 Y CN 201327524Y
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Abstract
The utility model provides a high-voltage heavy-current amplifier circuit which comprises a high-voltage power amplifier, a current amplifier, a current amplifying array and a power supply unit. The high-voltage heavy-current amplifier circuit is characterized in that the current amplifying array is composed of randomly a plurality of current amplifying macro units, each current amplifying macro unit is composed of two current amplifying subunits and a power supply, and every two current amplifying subunits are powered by one power supply; all the current amplifying macro units are connected in parallel, so as to realize expansion of the current amplifying capacity according to any demand, and maintain the voltage output capacity which is consistent with that of the high-voltage power amplifier; and the high-voltage power amplifier and the current amplifier are powered by one power supply unit. The high-voltage heavy-current amplifier circuit also has the characteristics that: the circuit is brief and modularized, the performance is stable,, the current output can be unlimitedly expanded, the circuit has high testing precision and high speed when being applied to high-power semiconductor devices, and the like.
Description
Technical field
The utility model belongs to the big current amplifier circuit technology of high speed and high pressure of superpower semiconductor device test system.
Background technology
Power amplifier is one of critical component of superpower semiconductor test system.At present domestic semi-conductor discrete device test macro commonly used mostly select for use provide on the textbook the power amplification circuit, the amplifier output current scarce capacity of realizing, the general transient power electric current that only can provide below the low pressure 40A, and reaction velocity is very slow, can't satisfy the needs of superpower device detection.
Summary of the invention
The purpose of this utility model is the shortcoming that overcomes prior art, a kind of high-voltage great-current amplifier circuit is provided, but has simple in circuits, stable performance, modularization, electric current output unlimited extension, be used for large power semiconductor device measuring accuracy height, characteristics such as speed is fast.
The technical scheme that realizes the utility model purpose is: a kind of high-voltage great-current amplifier circuit comprises that high-voltage power amplifier, current amplifier, electric current amplify array, power power-supply unit.It is characterized in that electric current amplifies array and is made up of any a plurality of electric currents amplification macroelements, each electric current amplifies macroelement and is made of two electric currents amplification subelements and a power power-supply unit.Amplify in the array at electric current, all electric currents amplification macroelements connect for parallel, realize any electric current amplifying power expansion that needs, and keep having the voltage fan-out capability consistent with the high-voltage power amplifier; High-voltage power amplifier, current amplifier are powered by a power power-supply unit.
The high-voltage power amplifier adopts a kind of novel integrated power amplifier, has been equipped with high pressure and current foldback circuit simultaneously; The high-voltage power amplifier is accepted the voltage signal V1 from voltage signal generator, is subjected to the effect of voltage/current sampled feedback signal simultaneously, realizes the accurate driving to the DUT electric parameters testing.
Integrated power amplifier can be selected gain bandwidth (GB) and output slew rate as required, and full scale can reach in the 100nS pulse rise time.
Electric current amplifies subelement and is made of biasing circuit, input stage, amplification output stage, CR1 wherein, and R2, CR6 are used for high-voltage great-current booster output pipe is arranged on the inferior duty of amplifying as the voltage stabilizing biasing circuit; R1, Q1, R5, Q2, CR2, CR3, CR4, CR5 and R3, R4 constitute elementary amplifying circuit; Q3, Q4, Q5, Q6, and R6, R7, R8, R9 constitutes interstage amplifier section; Q7-Q14 and R10-R33 constitute output amplifier stage; CR15-CR18 and R34 constitute holding circuit; C1-C4 is used to adjust the AC characteristic of this element circuit, avoids circuit oscillation.
In the utility model, we select for use new high-speed power transistor as amplifier tube, through autonomous innovation, designed the parallel power amplifying circuit, and this circuit is cured as the power amplifier unit template as the unit, the current driving ability of every template has reached more than the 250A, and the reaction time is less than 5 microseconds.If desired, a plurality of power amplifier unit templates can be inserted goods-shelf type configuration bus slot simultaneously, to obtain bigger power drive electric current.The maximum power amplifier transient state output power that native system reaches at present is 100KW, and maximum transient state output current is 500A.
Description of drawings
Fig. 1 is big current power amplifying circuit of high speed and high pressure and power device on-state parameter testing theory diagram.
Fig. 2 is a high-voltage power amplifying circuit schematic diagram.
Fig. 3 is that electric current amplifies the subelement schematic circuit.
Fig. 4 is that electric current amplifies the subelement synoptic diagram.
Fig. 5 is that electric current amplifies the macroelement theory diagram.
Fig. 6 is the big current amplifier theory diagram of array.
Fig. 7 is the big current power amplifying circuit of a high speed and high pressure theory diagram.
Embodiment
As shown in Figure 1, a kind of high-voltage great-current amplifier circuit, comprise that high-voltage power amplifier, current amplifier, electric current amplify array, power power-supply unit, high-voltage power amplifier and one-level current amplifier are powered by a power power-supply, and each amplifying unit that electric current amplifies in the array is powered by power power-supply separately respectively.
As shown in Figure 6, electric current amplifies array to be made up of any a plurality of electric currents amplification macroelements, and all electric currents amplify the parallel connection of macroelements, realize any electric current amplifying power expansion that needs, and maintenance have the voltage fan-out capability consistent with the high-voltage power amplifier.Each electric current amplifies macroelement and has the two-way fan-out capability of 250A/50V, and multi-element array on this basis can provide 250A/50V * N power drive signal source ability.
As shown in Figure 5, each electric current amplifies that macroelement amplifies subelements by two electric currents and power power-supply constitutes and per two electric currents amplify subelement and powered by a power power-supply.
As Fig. 4 and shown in Figure 7, to high-voltage power amplifier input programmable voltage signal and feedback voltage and current signal, the voltage signal of high pressure power amplifier output carries out the one-level electric current through current amplifier and amplifies, export to electric current amplification array again and carry out the amplification of secondary electric current, press drive signal by the large-current electric that the output of electric current amplification array needing to obtain, in order to realize the power semiconductor device test under the big current conditions.
As shown in Figure 3, electric current amplifies subelement and is made of biasing circuit, input stage, amplification output stage, CR1 wherein, and R2, CR6 are used for high-voltage great-current booster output pipe is arranged on the inferior duty of amplifying as the voltage stabilizing biasing circuit; R1, Q1, R5, Q2, CR2, CR3, CR4, CR5 and R3, R4 constitute elementary amplifying circuit; Q3, Q4, Q5, Q6, and R6, R7, R8, R9 constitutes interstage amplifier section; Q7-Q14 and R10-R33 constitute output amplifier stage; CR15-CR18 and R34 constitute holding circuit; C1-C4 is used to adjust the AC characteristic of this element circuit, avoids circuit oscillation.Transistors at different levels adopt the novel high speed device respectively, and fully loaded pulse power can reach 125A * 50V after optimal compensating, are not more than 100nS at full capacity pulse rise time.
As depicted in figs. 1 and 2, the system embedded computer of being subjected to is controlled, and is taken place to import programmable voltage signal V1 and V2 to A extra-high voltage power amplifier and G utmost point power amplifier respectively by high speed and precision D/A, as the voltage/current source reference.A pole tension or current reference signal amplify array through high pressure power amplifier, current amplifier, electric current and carry out the voltage/current amplification, add to the A utmost point of DUT, and, make the voltage or the electric current that add to the A-K interpolar satisfy the relevant parameter test request through A-K pole tension and current sample feedback; In like manner, G pole tension or current reference signal carry out electric current and voltage through power amplifier, current amplifier and amplify, and add to the G utmost point of DUT, and through G-K pole tension and current sample feedback, make the voltage or the electric current that add to the G-K interpolar satisfy the parameter testing requirement.According to the parameter testing requirement, the voltage or the current signal of A-K and the sampling of the G-K utmost point are used as Computer Processing, finally obtain corresponding test result.Owing to stress big current power amplifier and at the test of semiconductor on-state electrical quantity, the A utmost point that does not comprise test off-state parameter needs among Fig. 1 boost amplifying circuit and other metering circuit.And only stress high-voltage great-current amplifier section.
The utility model can accurately be tested the current/voltage source that provides for the on-state DC parameter of multiple novel high-power device (on-state power reaches more than the 50KW), simultaneously by to by the accurate control and the measurement of plus signal, and to the real-time measurement and the output waveform analysis of DUT device state, can realize such as IGBT, ON time under the big electric current of high power devices such as MOSFET, closing time, conducts energy, turn-off the accurate measurement of alternating current parameters such as energy, be used in combination embedded computer, the high speed storing oscillograph, the high speed signal analytical algorithm, time parameter Measurement Resolution under the big current conditions of 1000A on-state reaches 2nS, measuring accuracy 10-15nS.
The key technical indexes:
Supply voltage: ± 40--± 80V
Output voltage range: 0--± 65V
Output current scope: 0--± 2500A
Peak power output: 50KW
Output slew rate: 15V/uS
Minimum pulse width: 10uS.
Claims (3)
1, a kind of high-voltage great-current amplifier circuit, comprise that high-voltage power amplifier, current amplifier, electric current amplify array and power power-supply unit, it is characterized in that electric current amplifies array and is made up of any a plurality of electric currents amplification macroelements, each electric current amplifies that macroelement amplifies subelements by two electric currents and power power-supply constitutes and per two electric currents amplify subelement and powered by a power power-supply, all electric currents amplify the parallel connection of macroelement, realize any electric current amplifying power expansion that needs, and keep having the voltage fan-out capability consistent with the high-voltage power amplifier; High-voltage power amplifier, current amplifier are powered by a power power-supply unit.
2, a kind of high-voltage great-current amplifier circuit as claimed in claim 1 is characterized in that the high-voltage power amplifier adopts integrated power amplifier, has been equipped with high pressure and current foldback circuit simultaneously; The high-voltage power amplifier is accepted the voltage signal V1 from voltage signal generator, is subjected to the effect of voltage/current sampled feedback signal simultaneously, realizes the accurate driving to the DUT electric parameters testing.
3, a kind of high-voltage great-current amplifier circuit as claimed in claim 1, it is characterized in that electric current amplifies subelement and is made of biasing circuit, input stage, output amplifier stage, CR1 wherein, R2, CR6 is used for high-voltage great-current booster output pipe is arranged on the inferior duty of amplifying as the voltage stabilizing biasing circuit; R1, Q1, R5, Q2, CR2, CR3, CR4, CR5 and R3, R4 constitute elementary amplifying circuit; Q3, Q4, Q5, Q6, and R6, R7, R8, R9 constitutes interstage amplifier section; Q7-Q14 and R10-R33 constitute output amplifier stage; CR15-CR18 and R34 constitute holding circuit; C1-C4 is used to adjust the AC characteristic of this element circuit, avoids circuit oscillation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200820222528 CN201327524Y (en) | 2008-11-20 | 2008-11-20 | High-voltage heavy-current amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200820222528 CN201327524Y (en) | 2008-11-20 | 2008-11-20 | High-voltage heavy-current amplifier circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201327524Y true CN201327524Y (en) | 2009-10-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200820222528 Expired - Fee Related CN201327524Y (en) | 2008-11-20 | 2008-11-20 | High-voltage heavy-current amplifier circuit |
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| CN (1) | CN201327524Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105375892A (en) * | 2014-08-29 | 2016-03-02 | 华北电力大学 | High-efficiency energy-saving current amplifier |
| CN109001571A (en) * | 2018-07-19 | 2018-12-14 | 深圳宜特检测技术有限公司 | A kind of strengthening electric current power method and device for ageing management machine |
| CN110927420A (en) * | 2019-11-25 | 2020-03-27 | 国网宁夏电力有限公司电力科学研究院 | Current and voltage regulation and control system for feeder automation test |
-
2008
- 2008-11-20 CN CN 200820222528 patent/CN201327524Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105375892A (en) * | 2014-08-29 | 2016-03-02 | 华北电力大学 | High-efficiency energy-saving current amplifier |
| CN105375892B (en) * | 2014-08-29 | 2018-01-16 | 华北电力大学 | A kind of energy-efficient current amplifier |
| CN109001571A (en) * | 2018-07-19 | 2018-12-14 | 深圳宜特检测技术有限公司 | A kind of strengthening electric current power method and device for ageing management machine |
| CN110927420A (en) * | 2019-11-25 | 2020-03-27 | 国网宁夏电力有限公司电力科学研究院 | Current and voltage regulation and control system for feeder automation test |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHAANXI BAIREN ELECTRONIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: XI AN BAREN TECHNOLOGY CO., LTD. Effective date: 20121121 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20121121 Address after: High tech Zone 710075 Shaanxi city of Xi'an Province Tang Yan Road Plaza Garden (I- will) No. 4 Building 1 unit 12511 room Patentee after: Shaanxi Bai Ren Electronic Technology Co., Ltd. Address before: 710075 B213, building five, building 2, hi tech Road, hi tech Zone, Shaanxi, Xi'an Patentee before: Xi'an Bairen Technology Co., Ltd. |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091014 Termination date: 20131120 |