CN201289864Y - Side light-emitting diode - Google Patents

Side light-emitting diode Download PDF

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Publication number
CN201289864Y
CN201289864Y CNU2008202136580U CN200820213658U CN201289864Y CN 201289864 Y CN201289864 Y CN 201289864Y CN U2008202136580 U CNU2008202136580 U CN U2008202136580U CN 200820213658 U CN200820213658 U CN 200820213658U CN 201289864 Y CN201289864 Y CN 201289864Y
Authority
CN
China
Prior art keywords
chamber
light
emitting diode
chip
lateral light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNU2008202136580U
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Chinese (zh)
Inventor
孙平如
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Jufei Optoelectronics Co Ltd
Original Assignee
Shenzhen Jufei Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Jufei Optoelectronics Co Ltd filed Critical Shenzhen Jufei Optoelectronics Co Ltd
Priority to CNU2008202136580U priority Critical patent/CN201289864Y/en
Application granted granted Critical
Publication of CN201289864Y publication Critical patent/CN201289864Y/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model provides a side-emitting LDE (light emitting diode), which comprises a chamber. A chip is arranged at the bottom of the chamber; the inner wall of the chamber extends from the bottom to the top to form a concave curved surface capable of reflecting the light rays emitted from the chip out of the chamber. The light rays emitted from the chip in the chamber are reflected out of the chamber from the concave curved surface. Compared with the side walls with straight inclined planes in the prior art, the concave curved surface can enlarge the reflecting angles of the light rays, thereby enabling more light emitted from the side of the chip and improving the brightness of the emitted light. Meanwhile, the enlargement of the reflecting angles makes the emitting positions of the chamber of the side-emitting LDE closer to corners, thereby improving the uniformity of the emitted light.

Description

Lateral light-emitting diode
Technical field
The utility model belongs to light-emitting diode, relates in particular to a kind of lateral light-emitting diode.
Background technology
As shown in Figure 1, the lateral light-emitting diode that existing market is common, its chamber 11 has angled side walls 12, is provided with chip 13 in the bottom of chamber 11, and the light that chip 13 penetrates can be outside sidewall 12 reflexes to chamber 11.Wherein, the degree of depth of chamber 11 is greater than the setting height(from bottom) of chip 13, and is no more than six times of this setting height(from bottom), can be 0.2mm~0.48mm.
In recent years, because lateral light-emitting diode is evolved to slim product gradually, chamber 11 bottom minor face sizes are further limited, narrower, and the light energy losses that causes the side of chip 13 to be penetrated is bigger, and brightness is restricted; Simultaneously, because the influence on straight inclined-plane, chamber 11 long limits, the light of lateral light-emitting diode corner is less, and brightness is lower, so the uniformity of light-emitting area is relatively poor.
The utility model content
Technical problem to be solved in the utility model is, a kind of lateral light-emitting diode is provided, and can improve emitting brightness, and make bright dipping more even.
In order to solve the problems of the technologies described above, the utility model provides a kind of lateral light-emitting diode, and it has chamber, is provided with chip in the bottom of described chamber, the inwall of described chamber extends from the bottom toward the top, and formation can reflex to the light of described chip emission the outer concave curvatures of described chamber.
The light that chip in the chamber penetrates outside concave curvatures reflexes to chamber, is that straight inclined plane is compared with sidewall in the prior art, and this concave curvatures can make the reflection angle of light increase, thereby makes the bright dipping of ambient light of chip more, has improved the brightness of bright dipping; Simultaneously, reflection angle increase also make this lateral light-emitting diode chamber go out the more contiguous corner of optical position, improved and uniformity of light.
Description of drawings
Fig. 1 is the cross-sectional schematic of a kind of lateral light-emitting diode of providing of prior art;
Fig. 2 is the long limit cross-sectional schematic of a kind of lateral light-emitting diode of providing of the utility model embodiment;
Fig. 3 is the minor face cross-sectional schematic of the described lateral light-emitting diode of Fig. 2.
Embodiment
In order to make technical problem to be solved in the utility model, technical scheme and beneficial effect clearer,, the utility model is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
See also Fig. 2, the utility model embodiment provides a kind of lateral light-emitting diode, comprises packaging part body 10, and body 10 has chamber 4, the bottom of this chamber 4 is provided with lead frame 2, and the some of lead frame 2 extends to these packaging part body 10 outsides and forms conductive electrode.Led chip 3 is installed in chamber 4, and it is by being electrically connected on the lead frame 2.Be filled with sealant 6 in the chamber 4, sealant 6 can be a transparent adhesive tape, also can be the mixture by transparent glue and multiple fluorescent material.
The sidewall of above-mentioned chamber 4 extends to form concave curvatures 5 from the bottom toward the top, utilizes this concave curvatures 5, the light of chip 3 emissions can be reflexed to outside the chamber 4.This concave curvatures 5 can be combined by several inclined-planes, and the angle between each inclined-plane is greater than 90 degree.Like this, angle is greater than connecting one by one between the inclined planes of 90 degree, and the concave curvatures 5 of formation can reflect the light that chip 3 sends outside chamber 4, the angle of reflection on the straight inclined plane in compared to existing technology, and its angle of reflection increases.
Please together consult Fig. 2 and Fig. 3, in the present embodiment, concave curvatures 5 comprises vertical plane 51 and the inclined plane 52 that is connected with vertical plane 51, and inclined plane 52 is arranged at the bottom, is connected with chamber 4 bottoms.Owing to increased vertical plane 51, make the terminal point on inclined plane 52 can be lower, and start position be constant, the angle increase between therefore straight inclined plane 52 and chamber 4 bottoms, thus increased the angle of reflection of light.
Wherein, the degree of depth of chamber 4 can be set to 0.20mm~0.35mm, and the height of vertical plane 51 is 0.02~0.15mm, and the volume of chamber 4 is strengthened.Have arc transiting surface 53 between vertical plane 51 and the inclined plane 52, the radius of transition face 53 is 0.1~0.3 times of vertical plane 51 height, makes vertical plane 51 mild toward inclined plane 52 transition, guarantees out uniformity of light.
In addition, above-mentioned concave curvatures 5 can also be the circular arc of radian less than 90 degree, or the concave curvatures of other shapes, as long as light can be reflexed to outside the chamber 4, and increases angle of reflection all within protection range of the present utility model.
Therefore, the light that the chip 3 in the chamber 4 penetrates is outside concave curvatures 5 reflexes to chamber 4, with sidewall in the prior art is that straight inclined plane is compared, this concave curvatures 5 can make the reflection angle of light increase, thereby makes the bright dipping of ambient light of chip 3 more, has improved the brightness of bright dipping; Simultaneously, reflection angle increase also make this lateral emitting secondary utmost point tube chamber chamber go out the more contiguous corner of optical position, improved and uniformity of light, make that the uniformity of backlight is better.In addition, after the employing concave curvatures 5, the space of chamber 4 is increased, easier placement chip 3, and filling sealing agent is easier to accurate control.
The lateral light-emitting diode that the utility model embodiment provides is mainly used in the slim full-color backlight screen of products such as mobile communication terminal machine, video telephone, MP3, MP4, vehicle-carrying DVD, NB.In field of backlights, compare with traditional C CFL light source, that LED has is solid-state, environmental protection, energy-conservation low in energy consumption, safe, frivolous, color representation better, the colour gamut of LED is wider, color saturation can be accomplished more than 105%, and opposite CCFL is narrow, and major part can only be accomplished about 70%.
The above only is preferred embodiment of the present utility model; not in order to restriction the utility model; all any modifications of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the protection range of the present utility model.

Claims (7)

1, a kind of lateral light-emitting diode has chamber, is provided with chip in the bottom of described chamber, it is characterized in that: the sidewall of described chamber extends from the bottom toward the top, and formation can reflex to the light of described chip emission the outer concave curvatures of described chamber.
2, lateral light-emitting diode as claimed in claim 1 is characterized in that: described concave curvatures is combined by several inclined-planes, and the angle between each described inclined-plane is greater than 90 degree.
3, lateral light-emitting diode as claimed in claim 2 is characterized in that: described concave curvatures comprises vertical plane and the inclined plane that is connected with described vertical plane, and described inclined plane is arranged at the bottom.
4, lateral light-emitting diode as claimed in claim 3 is characterized in that: the height of described vertical plane is 0.02mm~0.15mm.
5, lateral light-emitting diode as claimed in claim 3 is characterized in that: have arc transiting surface between described vertical plane and the inclined plane, the radius of described transition face is 0.1~0.3 times of vertical plane height.
6, lateral light-emitting diode as claimed in claim 1 is characterized in that: described concave curvatures is the circular arc of radian less than 90 degree.
7, as each described lateral light-emitting diode of claim 1-6, it is characterized in that: the degree of depth of described chamber is 0.2mm~0.35mm.
CNU2008202136580U 2008-11-19 2008-11-19 Side light-emitting diode Expired - Lifetime CN201289864Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2008202136580U CN201289864Y (en) 2008-11-19 2008-11-19 Side light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2008202136580U CN201289864Y (en) 2008-11-19 2008-11-19 Side light-emitting diode

Publications (1)

Publication Number Publication Date
CN201289864Y true CN201289864Y (en) 2009-08-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNU2008202136580U Expired - Lifetime CN201289864Y (en) 2008-11-19 2008-11-19 Side light-emitting diode

Country Status (1)

Country Link
CN (1) CN201289864Y (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101667620B (en) * 2009-09-16 2011-07-27 深圳市聚飞光电股份有限公司 White light-emitting diode (LED)
CN107394028A (en) * 2017-08-14 2017-11-24 天津中环电子照明科技有限公司 Quantum dot LED and light fixture
TWI672547B (en) * 2015-12-31 2019-09-21 晶元光電股份有限公司 Light-emitting device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101667620B (en) * 2009-09-16 2011-07-27 深圳市聚飞光电股份有限公司 White light-emitting diode (LED)
TWI672547B (en) * 2015-12-31 2019-09-21 晶元光電股份有限公司 Light-emitting device
US10586902B2 (en) 2015-12-31 2020-03-10 Epistar Corporation Light-emitting device having dissimilar first and second light-emitting angles
TWI731394B (en) * 2015-12-31 2021-06-21 晶元光電股份有限公司 Light-emitting device
CN107394028A (en) * 2017-08-14 2017-11-24 天津中环电子照明科技有限公司 Quantum dot LED and light fixture

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: SHENZHEN JUFEI OPTOELECTRONICS CO., LTD

Free format text: FORMER NAME: SHENZHEN CITY JUFEI OPTO-ELECTRICAL CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: Building 2, building three, Dongfang Ming Industrial City, 83 Dabao Road, 33 District, Guangdong, Shenzhen Province, Baoan District, China: 518000

Patentee after: Shenzhen City Jufei Optoelectronic Co., Ltd.

Address before: Building 2, building three, Dongfang Ming Industrial City, 83 Dabao Road, 33 District, Guangdong, Shenzhen Province, Baoan District, China: 518000

Patentee before: Shenzhen Jufei Optoelectronic Co., Ltd.

C56 Change in the name or address of the patentee
CP02 Change in the address of a patent holder

Address after: 518109 Guangdong city of Shenzhen province Baoan District Dalang Street Community creative Peak Road No. 65 building 1-4 layer

Patentee after: Shenzhen City Jufei Optoelectronic Co., Ltd.

Address before: 518000, 2 floor, three Ming Industrial Town, 33 Dabao Road, Baoan District District, Shenzhen, Guangdong,, China

Patentee before: Shenzhen City Jufei Optoelectronic Co., Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20090812