CN201210669Y - MOS tube driving circuit - Google Patents
MOS tube driving circuit Download PDFInfo
- Publication number
- CN201210669Y CN201210669Y CNU2008200945665U CN200820094566U CN201210669Y CN 201210669 Y CN201210669 Y CN 201210669Y CN U2008200945665 U CNU2008200945665 U CN U2008200945665U CN 200820094566 U CN200820094566 U CN 200820094566U CN 201210669 Y CN201210669 Y CN 201210669Y
- Authority
- CN
- China
- Prior art keywords
- triode
- oxide
- metal
- semiconductor
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Electronic Switches (AREA)
Abstract
The utility model relates to a MOS transistor drive circuit, comprising a MOS transistor, driving signals for driving the MOS transistor, a delay unit for connecting the driving signals, a triode Q1, a triode Q2 and a triode Q3 connected with the delay unit through a resistance R1, wherein the driving signals are connected with base electrodes of the triode Q1, the triode Q2 through a resistance R2, emitter electrodes of the triode Q1 and the triode Q2 are respectively connected with grid electrodes of the MOS transistor through a resistance R3 and a resistance R4, while the emitter electrode of the triode Q3 is connected with the grid electrode of the MOS transistor through a resistance R5, thereby restraining surge of the MOS transistor generated in the operation process through switching the driving current, reducing noises in the operation, avoiding expensive special drive chips, reducing cost.
Description
[technical field]
The utility model relates to the drive circuit technical field, particularly a kind of metal-oxide-semiconductor drive circuit.
[background technology]
In current most of Switching Power Supplies, all to use metal-oxide-semiconductor, grid at metal-oxide-semiconductor applies an adjustable drive signal, recently control the turn-on and turn-off time of metal-oxide-semiconductor by the duty of regulating this drive signal, thereby export scalable, controllable voltage.Generally speaking,, be connected to the grid of metal-oxide-semiconductor, thereby realize switch control metal-oxide-semiconductor by a resistance from the control signal of control chip output.Yet in this case, the drive current that control chip provides to metal-oxide-semiconductor rises very fast, causes very high surge and the noise opened easily, thereby causes the damage of metal-oxide-semiconductor, and influences the EMC characteristic of whole Switching Power Supply.Usually, the method that can directly increase special driving chip by the grid at output control signal and metal-oxide-semiconductor solves this problem, but makes the increase that certainly will cause cost in this way, obviously is not suitable for promoting the use of in enormous quantities.
[utility model content]
For addressing the above problem, main purpose of the present utility model is to provide a kind of circuit simple and lower-cost metal-oxide-semiconductor drive circuit, can control the rate of climb of metal-oxide-semiconductor drive current effectively, suppress surge and noise in the metal-oxide-semiconductor opening process, reduce the damage of metal-oxide-semiconductor and improve the EMC characteristic of whole Switching Power Supply.
For achieving the above object, the technical scheme of this creation is:
A kind of metal-oxide-semiconductor drive circuit, include metal-oxide-semiconductor, drive this metal-oxide-semiconductor drive signal, connect delay unit, triode Q1, the triode Q2 of drive signal, and the triode Q3 that is connected with delay unit by resistance R 1; Wherein, drive signal links to each other with the base stage of triode Q1, triode Q2 by resistance R 2, the emitter of triode Q1, triode Q2 is connected to the grid of metal-oxide-semiconductor respectively by resistance R 3, resistance R 4, and the emitter of triode Q3 is connected to the grid of metal-oxide-semiconductor by resistance R 5.
Compared to prior art, the utility model metal-oxide-semiconductor drive circuit suppresses the surge that metal-oxide-semiconductor produces at opening process by switching drive current, and the noise when reducing to open is avoided using expensive special driving chip, has reduced cost.
[description of drawings]
Fig. 1 is a kind of metal-oxide-semiconductor drive circuit of the utility model schematic diagram.
[embodiment]
See also shown in Figure 1, a kind of metal-oxide-semiconductor drive circuit of the utility model includes metal-oxide-semiconductor and drives the drive signal of this metal-oxide-semiconductor, this drive signal links to each other with the base stage of triode Q2 with triode Q1 by a resistance R 2, the emitter of triode Q1 is connected to the grid of metal-oxide-semiconductor by resistance R 3, and the emitter of triode Q2 also is connected to the grid of metal-oxide-semiconductor by resistance R 4.Wherein, described triode Q1 is the NPN type, and triode Q2 is a positive-negative-positive.Described drive signal is connected to the base stage of NPN type triode Q3 simultaneously by a delay unit and resistance R 1, the emitter of NPN type triode Q3 is connected to the grid of metal-oxide-semiconductor by resistance R 5.The collector electrode of triode Q1 and triode Q3 is connected with power Vcc, and this voltage ratio is lower, and the collector electrode of triode Q2 connects ground.Described metal-oxide-semiconductor is a N type metal-oxide-semiconductor, and its source electrode connects ground, and drain electrode is connected with high voltage Vin.
Described drive signal is the square-wave signal of a scalable duty ratio, by regulating the duty ratio may command output voltage of this signal.When metal-oxide-semiconductor is opened, the base stage of triode Q2 is a high level, triode Q2 ends, and the base stage of triode Q1 is a high level, triode Q1 conducting, the drive current of metal-oxide-semiconductor is limited in a lower numerical value by resistance R 3, because the existence of metal-oxide-semiconductor input capacitance, this electric current slowly charges for input capacitance, and the grid voltage of metal-oxide-semiconductor slowly rises.Because the effect of delay unit after the time-delay some time, is approximately about 1uS triode Q3 conducting.At this moment, because resistance R 3 and resistance R 5 parallel connections, for metal-oxide-semiconductor provides bigger drive current, the grid voltage of metal-oxide-semiconductor rises rapidly.When operate as normal, the grid voltage of metal-oxide-semiconductor provides by deciding voltage vcc.When metal-oxide-semiconductor turn-offed, triode Q1, triode Q3 ended, and triode Q2 conducting, the gate charge of metal-oxide-semiconductor is released rapidly by a very little resistance R 4 and a triode Q2 of resistance.
This is created a kind of metal-oxide-semiconductor drive circuit and adopts the mode of switching drive current to suppress surge and the noise that metal-oxide-semiconductor produces in opening process, reaches the effect of protection metal-oxide-semiconductor and the whole Switching Power Supply EMC characteristic of improvement.Opening at the beginning; drive current is limited in a lower numerical value; effect along with delay unit; after having crossed about 1uS; drive current is enhanced a higher numerical value; quicken to give the grid input capacitance charging of metal-oxide-semiconductor, thereby it is excessive and produce the drawback of surge and noise to have reduced to open the moment drive current at metal-oxide-semiconductor, has protected metal-oxide-semiconductor and has improved the EMC characteristic.Wherein, described to decide voltage vcc be a lower direct voltage, and its role is to provides a grid voltage to metal-oxide-semiconductor when the metal-oxide-semiconductor operate as normal; And described voltage Vin is a higher direct voltage, and by the on-off action of metal-oxide-semiconductor, level produces a controllable output voltage in the back.
Most preferred embodiment described above only is that this creation is set forth and illustrated, but is not limited to disclosed any concrete form, and it is possible carrying out many modifications and variations.
Claims (4)
1. a metal-oxide-semiconductor drive circuit includes metal-oxide-semiconductor and the drive signal that drives this metal-oxide-semiconductor, it is characterized in that: also include the delay unit, triode Q1, the triode Q2 that connect drive signal, and pass through the triode Q3 that resistance R 1 is connected with delay unit; Wherein, drive signal links to each other with the base stage of triode Q1, triode Q2 by resistance R 2, the emitter of triode Q1, triode Q2 is connected to the grid of metal-oxide-semiconductor respectively by resistance R 3, resistance R 4, and the emitter of triode Q3 is connected to the grid of metal-oxide-semiconductor by resistance R 5.
2. the drive circuit of metal-oxide-semiconductor as claimed in claim 1, it is characterized in that: described triode Q1 is the NPN type, and triode Q2 is a positive-negative-positive.
3. the drive circuit of metal-oxide-semiconductor as claimed in claim 1, it is characterized in that: the collector electrode of described triode Q1 and triode Q3 is connected with power Vcc, and the collector electrode of triode Q2 connects ground.
4. as the drive circuit of claim 2 or 3 described metal-oxide-semiconductors, it is characterized in that: described metal-oxide-semiconductor is a N type metal-oxide-semiconductor, and its source electrode connects ground, and drain electrode is connected with high voltage Vin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200945665U CN201210669Y (en) | 2008-06-06 | 2008-06-06 | MOS tube driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200945665U CN201210669Y (en) | 2008-06-06 | 2008-06-06 | MOS tube driving circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201210669Y true CN201210669Y (en) | 2009-03-18 |
Family
ID=40481404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200945665U Expired - Fee Related CN201210669Y (en) | 2008-06-06 | 2008-06-06 | MOS tube driving circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201210669Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106230240A (en) * | 2016-04-21 | 2016-12-14 | 上海麟荣电子技术有限公司 | Asymmetric formula MOSFET parallel circuit |
| CN106788368A (en) * | 2015-09-25 | 2017-05-31 | Det国际控股有限公司 | For the driver of P-channel MOSFET |
-
2008
- 2008-06-06 CN CNU2008200945665U patent/CN201210669Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106788368A (en) * | 2015-09-25 | 2017-05-31 | Det国际控股有限公司 | For the driver of P-channel MOSFET |
| CN106788368B (en) * | 2015-09-25 | 2022-02-01 | 泰达电子股份有限公司 | Driver for P-channel MOSFET |
| CN106230240A (en) * | 2016-04-21 | 2016-12-14 | 上海麟荣电子技术有限公司 | Asymmetric formula MOSFET parallel circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101895281B (en) | Novel MOS tube drive circuit for switch power supply | |
| CN105048791A (en) | Power tube control system and external power tube driving circuit for switching power supply | |
| CN105027443B (en) | Inductive load driver conversion rate control device | |
| CN106505839A (en) | A kind of IGBT device drive circuit and method for reducing closing loss | |
| CN105187047B (en) | A kind of extra-high voltage level displacement circuit for IGBT driving chips | |
| CN206559229U (en) | A kind of switching regulator soft-start circuit | |
| CN105048790A (en) | Power tube control system and drive circuit for driving external power tube | |
| CN204858960U (en) | Power tube control system and external power tube drive circuit who is used for switching power supply | |
| CN102314847B (en) | Corner cutting circuit in LCD driving system | |
| CN204498094U (en) | The modulating pulse drive circuit of Connectors for Active Phased Array Radar T/R assembly | |
| CN201210669Y (en) | MOS tube driving circuit | |
| CN202009225U (en) | Boosting DC-DC short-circuit protection circuit | |
| CN102035381B (en) | BOOST circuit with adjusting starting voltage | |
| CN202121561U (en) | Novel MOS transistor drive circuit for switching power supply | |
| CN108551252B (en) | High-voltage grid driving circuit sharing input capacitance | |
| CN114844493B (en) | Delay driving circuit of dual-drive cascade device | |
| CN207910746U (en) | A kind of controllable power supply circuit of sequential | |
| CN106130525A (en) | One-way conduction circuit and the distribution line failure positioner made with this circuit | |
| CN207368649U (en) | A kind of inrush current suppression circuit | |
| CN206341200U (en) | Grid driving circuit | |
| CN206650647U (en) | A kind of High Power IGBT Driver Circuit | |
| CN103731138A (en) | Dead-time generating circuit for output stage of D-type audio power amplifier | |
| CN205912025U (en) | High voltage drive circuit prevents lining up circuit | |
| CN205212497U (en) | Power supply system is prevented in low -power consumption shutdown circuit and low -power consumption | |
| CN205912034U (en) | Non - superposing circuit and high voltage drive circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090318 Termination date: 20150606 |
|
| EXPY | Termination of patent right or utility model |