CN201169619Y - Apparatus for rapidly preparing gallium nitride thin film - Google Patents
Apparatus for rapidly preparing gallium nitride thin film Download PDFInfo
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- CN201169619Y CN201169619Y CNU2008200655450U CN200820065545U CN201169619Y CN 201169619 Y CN201169619 Y CN 201169619Y CN U2008200655450 U CNU2008200655450 U CN U2008200655450U CN 200820065545 U CN200820065545 U CN 200820065545U CN 201169619 Y CN201169619 Y CN 201169619Y
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- gallium nitride
- ion source
- magnetron sputtering
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- anode
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Abstract
The utility model relates to a device used for quickly preparing a gallium nitride membrane, wherein, a medium-frequency magnetron sputtering device and an anode layer ion source are arranged inside a vacuum chamber which is provided with a rotating substrate frame; the substrate frame is connected with a negative bias and heating control system; a magnetron sputtering target pool is connected with a medium-frequency switching power supply; liquid gallium is arranged inside the target pool and cooled by water on the reverse side of the target pool and then converted into solid; and the anode layer ion source is horizontally arranged, parallel to a magnetron sputtering target, equipped with an adjustable power supply, and provided with an inner cathode, an outer cathode, an anode, an outer pole shoe and an inner pole shoe through magnetic conductive plates. Due to combination of the medium-frequency magnetron sputtering device and the anode layer ion source, the density of plasmas of a film-coating area is greatly improved; gallium nitride is quickly deposited; simultaneously the adhesion between the gallium nitride and substrate materials is strengthened; and finally preparation of the gallium nitride membrane is quickly completed. The device is most suitable for preparing a flat membrane which is required to be completed at a lower temperature and the gallium nitride membrane of a device such as a transistor display, a solar battery and the like.
Description
Technical field
The utility model relates to a kind of device that is used for preparing fast gallium nitride film, specifically adopt medium frequency magnetron sputtering device and anode layer ion source in conjunction with the device that is used for preparing fast gallium nitride film, belong to by vacuum sputtering or the ion implantation plating field of carrying out.
Background technology
Gan is a third generation semi-conductor, is mainly used in light emitting semiconductor device and high power transistor, and two committed steps of component pipe core preparation are the epitaxy of film and the preparation of active coating.In order to obtain the surface of fabricating low-defect-density, gallium nitride film about 4 microns at least needs to grow in advance.Conventional preparation method comprises metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) or halogenide vapour phase epitaxy (HVPE), base mateiral be under 800～1100 ℃ of hot conditionss on sapphire or SiC substrate epitaxy form; MOCVD and MBE are then generally adopted in the preparation of photoelectric device.But devices such as flat panel thin film transistor indicating meter and solar cell generally adopt glass substrate, make requirements of process and finish at a lower temperature, and above-mentioned three kinds of methods can not be applicable to this class Application Areas.Therefore need to adopt preparation technology in low temperature such as magnetron sputtering, before the utility model, domestic Wuhan University's " a kind of method and apparatus that is used to prepare rare earth doped gallium nitride light-emitting film " patent application disclosed on May 16th, 2007, application number 200610125202.4, this technology adopts magnetron sputtering technique to prepare rare earth doped gallium nitride light-emitting film, but magnetron sputtering has two shortcomings: (1) sedimentation rate is low; (2) a little less than the sticking power.Therefore be difficult to form the rete of big thickness.Though have magnetic control sputtering device to prepare gan at present, the less medium frequency magnetron sputtering device of using, the still unmanned device that adopts ion source to combine with medium frequency magnetron sputtering.
Summary of the invention
The device that provides a kind of ion source to combine with medium frequency magnetron sputtering is provided the purpose of this utility model, the plasma density in plated film district is increased substantially, energy fast deposition gan strengthens the sticking power of gan and substrate material simultaneously, is used for preparing fast the device of gallium nitride film.
The utility model in order to achieve the above object, designed a kind of device that is used for preparing fast gallium nitride film, include vacuum chamber (13), the medium frequency magnetron sputtering device, the medium frequency magnetron sputtering device and the anode layer ion source (8) that it is characterized in that installation in the vacuum chamber, be provided with turning axle (6), substrate frame (11), two target ponds (5), substrate frame can be rotated with turning axle, substrate (10) lies in a horizontal plane on the substrate frame, above the target pond and parallel with target pond face, substrate frame is provided with heating control system (1) and negative bias (2); The target pond is connected to the IF switch power supply, and liquid gallium (3) is arranged in the target pond, and the back side, target pond is cooling room, and cooling room is provided with entrance of cooling water and outlet (7); The anode layer ion source level is installed and is parallel with magnetron sputtering target, also is equipped with regulated power supply.
Vacuum chamber described in the utility model (13) includes vacuum orifice (4), inlet pipe (9) and viewing window (12), and magnetron sputtering target, ion source and rotary substrate frame are installed.Described medium frequency magnetron sputtering device, be provided with two target ponds (5) and back-cooled system, the target pond is connected to the IF switch power supply, liquid gallium (3) is arranged in the target pond, because the fusing point of gallium has only 29 degrees centigrade, therefore employing level back of the body cooled target configuration, liquid gallium is subjected to the cooling of the back side, target pond and becomes solid, and water coolant is by import and separately turnover of outlet (7).Substrate (10) is housed under the substrate frame, heating control system (1) and negative bias (2) are housed on the substrate frame, substrate is placed in top, target pond and its surface is parallel with target pond face.
The utility model is to introduce ion source on the basis of medium frequency magnetron sputtering, the device that adopts the medium frequency magnetron sputtering device to combine with anode layer ion source and form, medium frequency magnetron sputtering with the nitrogen argon mixture gas as working gas, with a pair of twin magnetic controlled sputtering gallium target as starting material, the gallium target is subjected to an IF switch power drives, make the gallium target produce sputter, substrate is in the plasma slab at target position place, and atom that sputters out and nitrogen decompose the nitrogen particle that produces and react the generation gallium nitride film on substrate.The utility model to reach the purpose that strengthens sticking power, by improving plated film district plasma density, reaches the purpose that increases sedimentation rate by ion bombardment substrate and deposition material surface, finally finishes the preparation of gallium nitride film fast.
A kind of device that is used for preparing fast gallium nitride film of the utility model, described anode layer ion source is equipped with outer cathode (82), inner cathode (88) and anode (85), by magnetic conductive board (81) anode is installed and adjusts screw rod (87), anode and anodized insulation (86) are installed in to be adjusted on the screw rod, anode is positioned between outer pole shoe (83) and the pole shoe (84), and inner cathode is between inside and outside pole shoe and magnetic conductive board, and outer cathode is enclosed within outside the inner cathode.Make inner cathode with SmCo magnet, make outer cathode with the magnet steel collar.Its structure as shown in Figure 2.The core of anode layer ion source is the interpolar local high-intensity magnetic field that interior outer cathode magnet constitutes, working gas produces discharge under electric field, form plasma body, surf zone in electronics is wherein constrained in by high-intensity magnetic field between outer cathode, spin along magnetic line of force and to move, with the gas atom collision, thereby produce a large amount of gaseous ions.When electronics anode diffusion motion, further, produce more polyion with more polyatom collision, positive ion is subjected to magnetic field and substrate bias quickens, and enters the thin film deposition district.
The regulated power supply that anode layer ion source described in the utility model is equipped with is 0-1500V.Anode layer ion source working process: at first feed the working gas argon gas to ion source, the pilot-gas flow makes that ion source air pressure of living in is 0.4-0.8Pa, during work at the ion source anode adjustable voltage of 0-1500V in addition, anodic current is 500-800mA, and ion source magnetic field is 300-450 Gauss.Principle of work as shown in Figure 3.Ionization takes place in argon gas under electric field action, the secondary electron that electronics that produces and collision process produce is subjected to the lorentz's force effect in moving process, be bound near the high density plasma district of ion source, electronics and ar atmo for the helical movement under the action of a magnetic field bump, lines of magnetic induction as (B) expression among Fig. 3, produce a large amount of argon ions, argon ion moves under electric field action, forms one deck anode layer as thin as a wafer.Because magnetic field is transparent to ion, argon ion is subjected to the substrate voltage effect to enter the thin film deposition district, electric field as (E) expression substrate bias generation among Fig. 3, improve plasma density, the ion pair material surface that flies to substrate produces ion bombardment effects, to guarantee gallium nitride film fine and close structure is arranged.
The device that the utility model is a kind of to be used for preparing fast gallium nitride film has following advantage:
1, the utility model is introduced ion source on the basis of medium frequency magnetron sputtering technology, the medium frequency magnetron sputtering device combines with anode layer ion source, the plasma density in plated film district is increased substantially, thereby improve the sedimentation rate of gan, strengthen the sticking power of gan and substrate material simultaneously.
2, this device can be finished the gallium nitride film preparation at a lower temperature, the sedimentation rate height, and strong adhesion, the gallium nitride film that is suitable for devices such as flat sheet membranes, transistor display and solar cell most prepares.
Description of drawings
Below the utility model is described in further detail with accompanying drawing:
Fig. 1 is a kind of apparatus structure synoptic diagram that is used for preparing fast gallium nitride film of the utility model.(1) is heating control system among the figure, and (2) are negative bias, and (3) are the gallium target, (4) be vacuum orifice, (5) be the target pond, (6) are the turning axle of substrate frame, and (7) are the water coolant import and export, (8) be anode layer ion source, (9) be inlet pipe, (10) are substrate, and (11) are substrate frame, (12) be viewing window, (13) are vacuum chamber.
Fig. 2 is the assembling synoptic diagram of the anode layer ion source (8) that the utility model adopted.The outer cathode that (81) magnetic conductive board, (82) magnet steel collar are done among the figure, (83) outer pole shoe, (84) interior pole shoe, (85) anode, (86) anodized insulation, (87) anode are adjusted the inner cathode of screw rod, (88) SmCo magnet work.
Fig. 3 is the anode layer ion source principle of work synoptic diagram that the utility model adopted.(14) are the lines of magnetic induction of rete, (B) expression, the electric field that (E) expression substrate bias produces among the figure.
Fig. 4 is the x-ray diffraction pattern with the gallium nitride film of this device preparation.
Embodiment
Embodiment 1: a kind of device that is used for preparing fast gallium nitride film of the utility model, structure as shown in Figure 1.Include the medium frequency magnetron sputtering device and the anode layer ion source (8) of installing in vacuum chamber (13) and the vacuum chamber, be provided with turning axle (6), substrate frame (11) and two target ponds (5); Substrate frame can be rotated with turning axle, and substrate (10) lies in a horizontal plane on the substrate frame, and above the target pond and parallel with target pond face, substrate frame is provided with heating control system (1) and negative bias (2); The target pond is connected to the IF switch power supply, and liquid gallium (3) is arranged in the target pond, and the back side, target pond is cooling room, and cooling room is provided with water coolant, by import and separately turnover of outlet (7).Vacuum chamber includes vacuum orifice (4), inlet pipe (9) and viewing window (12).Anode layer ion source (8) is in vacuum indoor horizontal installation and parallel with magnetron sputtering target.The structure of anode layer ion source such as Fig. 2, ion source is provided with outer cathode (82), inner cathode (88) and anode (85), by magnetic conductive board (81) anode is installed and adjusts screw rod (87), anode and anodized insulation (86) are installed in to be adjusted on the screw rod, anode is positioned between outer pole shoe (83) and the pole shoe (84), and inner cathode is between inside and outside pole shoe and magnetic conductive board, and outer cathode is enclosed within outside the inner cathode.Make outer cathode (82) with the magnet steel collar, make inner cathode (88) with SmCo magnet.
Embodiment 2: working process of the present utility model is as follows: go up the substrate (10) that clean is installed in substrate frame (11), suitably select the distance of substrate to the target pond.When the vacuum tightness of vacuum chamber (13) reaches 10
-4During Pa, start the heating unit of heating control system (1), remove gas molecule adsorbed on vacuum wall, the substrate, vacuum tightness reaches 5 * 10
-3During the Pa left and right sides, charge into the working gas nitrogen and the argon gas of ion source and magnetic control sputtering system from inlet pipe (9), regulate the flow of inlet pipe, treat that stable gas pressure is when 0.4-0.8Pa, starting cathode leafing component (8), regulate the negative bias (2) and the temperature of substrate, the ionic fluid that produces with ion source bombards clean surface 30 minutes to substrate surface.Open the medium frequency magnetron sputtering device then, the gallium target is carried out sputter, cvd nitride gallium film on substrate.Regulate the ion source anode voltage, with the argon ion bombardment film of its generation, with enhanced film sticking power.After deposition process finished, logical nitrogen or naturally cooling treated that temperature reduces to below 50 ℃, take out sample.
Embodiment 3: use this device to be used for preparing fast gallium nitride film, with argon, nitrogen mixture gas is operation material, is 0.4-0.8Pa at air pressure, and temperature is 100-400 degree centigrade of scope, carried out the preparation of gan plated film, the gan sedimentation rate be the 1-5 micron/hour.Fig. 4 is the x-ray diffraction pattern of gallium nitride film, shows that the synthetic film is the gan of hexagonal structure.
This device can be finished the gallium nitride film preparation at a lower temperature, the sedimentation rate height, and strong adhesion, the gallium nitride film that is suitable for devices such as flat sheet membranes, transistor display and solar cell most prepares.
Claims (4)
1, a kind of device that is used for preparing fast gallium nitride film, include vacuum chamber (13), the medium frequency magnetron sputtering device, it is characterized in that the medium frequency magnetron sputtering device and the anode layer ion source (8) of installation in the vacuum chamber, be provided with turning axle (6), substrate frame (11), two target ponds (5), substrate frame can be rotated with turning axle, substrate (10) lies in a horizontal plane on the substrate frame, and above the target pond and parallel with target pond face, substrate frame is provided with heating control system (1) and negative bias (2); The target pond is connected to the IF switch power supply, and liquid gallium (3) is arranged in the target pond, and the back side, target pond is cooling room, and cooling room is provided with entrance of cooling water and outlet (7); The anode layer ion source level is installed and is parallel with magnetron sputtering target, is equipped with regulated power supply.
2, a kind of device that is used for preparing fast gallium nitride film according to claim 1, it is characterized in that anode layer ion source is equipped with outer cathode (82), inner cathode (88) and anode (85), by magnetic conductive board (81) anode is installed and adjusts screw rod (87), anode and anodized insulation (86) are installed in to be adjusted on the screw rod, anode is positioned between outer pole shoe (83) and the pole shoe (84), and inner cathode is between inside and outside pole shoe and magnetic conductive board, and outer cathode is enclosed within outside the inner cathode.
3, a kind of device that is used for preparing fast gallium nitride film according to claim 1 is characterized in that anode layer ion source (8) is installed in the vacuum chamber, and level is installed and be parallel with magnetron sputtering target.
4, a kind of device that is used for preparing fast gallium nitride film according to claim 1 is characterized in that the voltage of the regulated power supply that anode layer ion source is equipped with is 0-1500V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200655450U CN201169619Y (en) | 2008-01-30 | 2008-01-30 | Apparatus for rapidly preparing gallium nitride thin film |
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| Application Number | Priority Date | Filing Date | Title |
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| CNU2008200655450U CN201169619Y (en) | 2008-01-30 | 2008-01-30 | Apparatus for rapidly preparing gallium nitride thin film |
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| CN201169619Y true CN201169619Y (en) | 2008-12-24 |
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| CNU2008200655450U Expired - Fee Related CN201169619Y (en) | 2008-01-30 | 2008-01-30 | Apparatus for rapidly preparing gallium nitride thin film |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105256284A (en) * | 2015-11-17 | 2016-01-20 | 肇庆市科润真空设备有限公司 | Environment-friendly aluminum mirror vacuum coating equipment |
| CN111979514A (en) * | 2020-08-05 | 2020-11-24 | 清华大学无锡应用技术研究院 | Device for rapidly preparing gallium nitride film |
| CN115110048A (en) * | 2022-06-20 | 2022-09-27 | 肇庆市科润真空设备有限公司 | Magnetron sputtering-based PECVD (plasma enhanced chemical vapor deposition) film coating device and method |
-
2008
- 2008-01-30 CN CNU2008200655450U patent/CN201169619Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105256284A (en) * | 2015-11-17 | 2016-01-20 | 肇庆市科润真空设备有限公司 | Environment-friendly aluminum mirror vacuum coating equipment |
| CN111979514A (en) * | 2020-08-05 | 2020-11-24 | 清华大学无锡应用技术研究院 | Device for rapidly preparing gallium nitride film |
| CN115110048A (en) * | 2022-06-20 | 2022-09-27 | 肇庆市科润真空设备有限公司 | Magnetron sputtering-based PECVD (plasma enhanced chemical vapor deposition) film coating device and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081224 Termination date: 20100130 |