CN201151076Y - Polishing apparatus for curved surface piezoelectric wafer - Google Patents
Polishing apparatus for curved surface piezoelectric wafer Download PDFInfo
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- CN201151076Y CN201151076Y CNU2007201845388U CN200720184538U CN201151076Y CN 201151076 Y CN201151076 Y CN 201151076Y CN U2007201845388 U CNU2007201845388 U CN U2007201845388U CN 200720184538 U CN200720184538 U CN 200720184538U CN 201151076 Y CN201151076 Y CN 201151076Y
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
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Abstract
The utility model discloses a grinding device of a hood face piezo-electric wafer, which comprises a lower abrasive disc 1, a wafer carrier 2 and a wafer grinding control instrument 8, wherein the lower abrasive disc 1 and the wafer carrier 2 are made of a conductive metal, the lower abrasive disc 1 is connected with a lower electrode end of a probe of the wafer grinding control instrument 8, the wafer carrier 2 is connected with an upper electrode end of the probe of the wafer grinding control instrument 8, and the earthing electrode of the probe of the wafer grinding control instrument 8 is put to earth. Since the wafer grinding control instrument is introduced with a wafer grinding device, thereby the quality of grinding wafer is effectively controlled, the utility model particularly provides a grinding device of a piezo-electric wafer, which is used for grinding the piezo-electric wafer and is capable of effectively improving the grinding quality, improves the output of the acceptable products and effectively reduces the labor intensity of operators.
Description
Technical field
The present invention relates to a kind of polishing apparatus for curved surface piezoelectric wafer that curved surface piezoelectric wafer is ground, especially relate to a kind of polishing apparatus for curved surface piezoelectric wafer that the grinding progress of curved surface piezoelectric wafer is controlled automatically.
Background technology
The scope of application of curved surface piezoelectric wafer in electronic equipment is more and more wider, the curved surface piezoelectric wafer production process is the angle that quartz wafer is cut to requirement, and be machined to the diameter of appointment according to the shape requirement of required wafer, be ground to the thickness (thickness and frequency are inversely proportional to) of appointment then according to the frequency requirement of required wafer, carry out electrode coating again.
Two and in the grinding technics, a kind of quartz wafer grinding control instrument (ALC) is arranged at the same plane wafer thickness, can be used for control in real time by the actual (real) thickness of grinding wafers or frequency.In use, the extreme top lap that connects grinder that powers on of the probe of this quartz wafer grinding control instrument (ALC), the bottom electrode end connects lower millstone, earthing pole ground connection, elder generation calculates target frequency by the target thickness of wafer during grinding, target frequency is set in quartz wafer grinding control instrument (ALC), in process of lapping, constantly there is correspondent frequency to be sent to quartz wafer grinding control instrument (ALC), when the frequency that extremely is sent to quartz wafer grinding control instrument (ALC) by power-on and power-off reaches target frequency, quartz wafer grinding control instrument (ALC) is just controlled grinder automatically and is stopped to grind, and this moment, the thickness of workpiece to be machined wafer was target thickness.
In existing curved surface piezoelectric wafer thickness grinding technics, be that the quartz wafer that will be machined to specified angle and diameter sticks on the wafer carrier, the wafer that wafer carrier will be pasted thereon by deadweight pushes to lower millstone, axial rotation along with lower millstone, the wafer carrier band wafer and do irregular rotation at random on the working face of lower millstone, thereby the purpose that reaches grinding wafers (is seen Fig. 1, Fig. 2), when the thickness that is ground to roughly, stop mechanical lapping, wafer after grinding is taken off, measure its thickness, enter the hand lapping stage then, with the wafer hand lapping to desired thickness.Because existing process of lapping is divided into mechanical lapping and two stages of hand lapping, although the wafer amount that its mechanical lapping stage grinds is bigger, but because its each wafer all need be passed through the hand lapping stage, not only cause the quality instability of grinding, simultaneously also cause the overall yield of wafer not high, inefficiency, operative employee's labour intensity height.
Summary of the invention
The present invention solves the unsettled technical problem of existing in prior technology curved surface piezoelectric wafer Grinding Quality, provides a kind of Grinding Quality stable polishing apparatus for curved surface piezoelectric wafer.
It is not high that the present invention also solves existing in prior technology curved surface piezoelectric wafer overall yield simultaneously, inefficiency, the technical problem that operative employee's labour intensity is high provides a kind of curved surface piezoelectric wafer overall yield height, efficient high and reduce the polishing apparatus for curved surface piezoelectric wafer of operative employee's labour intensity greatly.
Above-mentioned technical problem of the present invention is mainly solved by following technical proposals: the present invention includes lower millstone 1, wafer carrier 2, wafer grinding control instrument 8, lower millstone 1 and wafer carrier 2 are made for conducting metal, the bottom electrode end of the probe of lower millstone 1 connecting wafer grinding control instrument 8, powering on of the probe of wafer carrier 2 connecting wafer grinding control instrument 8 is extreme, the earthing pole ground connection of the probe of wafer grinding control instrument 8.
As preferably, the present invention also comprises top electrode 5 and the insulating protective layer 6 on top electrode 5 outer walls, there is the axial center hole 4 of a penetrating slightly larger in diameter in the diameter of wafer 3 at the center of wafer carrier 2, top electrode 5 and insulating protective layer 6 insert in the axial centre sky 4, and powering on of the probe of wafer grinding control instrument 8 extremely is connected with top electrode 5.
As preferably, top electrode 5 uses coppers to form, and lower millstone 1 uses cast iron to make, and wafer carrier 2 use iron are made.
As preferably, the slightly larger in diameter of axial center hole 4 is in the diameter of insulating protective layer 6.
As preferably, insulating protective layer 6 is insulating sheaths.
As preferably, also be included in the metal protection layer 7 on insulating protective layer 6 outer walls, the slightly larger in diameter of axial center hole 4 is in the diameter of metal protection layer 7.
As preferably, metal protection layer 7 is a protective metal shell.
As preferably: metal protection layer 7 employed materials are iron.
Therefore, the utlity model has rational in infrastructure, characteristics such as thinking uniqueness, by in wafer polishing apparatus, adding wafer grinding control instrument, controlled the quality that wafer grinds effectively, especially the grinding for curved surface piezoelectric wafer provides a kind of stability that can not only effectively improve the quality, and improves the output of qualified products, also can effectively reduce the lapping device of the curved surface piezoelectric wafer of operative employee's labour intensity.
Description of drawings
Accompanying drawing 1 is a kind of structural representation of prior art;
Accompanying drawing 2 is that the A of accompanying drawing 1 is to view;
Accompanying drawing 3 is a kind of structural representations of the present invention;
Accompanying drawing 4 is that the B of accompanying drawing 3 is to view;
Accompanying drawing 5 is another kind of structural representations of the present invention;
Accompanying drawing 6 is that the C of accompanying drawing 5 is to view;
Accompanying drawing 7 is the third structural representations of the present invention;
Accompanying drawing 8 is that the D of accompanying drawing 7 is to view;
The specific embodiment
Below by embodiment, and in conjunction with the accompanying drawings, technical scheme of the present invention is described in further detail.
Embodiment 1: referring to Fig. 3, Fig. 4, the present invention includes lower millstone 1, wafer carrier 2, wafer grinding control instrument 8, lower millstone 1 uses cast iron to make, and wafer carrier 2 uses iron forming, the bottom electrode end of the probe of lower millstone 1 connecting wafer grinding control instrument (ALC) 8, powering on of the probe of wafer carrier 2 connecting wafer grinding control instrument (ALC) 8 is extreme, the earthing pole ground connection of the probe of wafer grinding control instrument (ALC) 8.
In the present invention, introduced wafer grinding control instrument (ALC) 8, the top electrode of the probe of wafer grinding control instrument (ALC) 8 is connected with wafer carrier 2, the bottom electrode of the probe of wafer grinding control instrument (ALC) 8 is connected with lower millstone 1, the earthing pole ground connection of the probe of wafer grinding control instrument (ALC) 8.When work, target thickness according to processing work calculates target frequency earlier, with the frequency setting of wafer grinding control instrument (ALC) 8 at target frequency, the wafer 3 that again a workpiece to be machined promptly has been machined to specified angle and diameter is placed on the working face of wafer carrier 2, lower millstone 1 rotates along the axle center, make wafer 3 along with wafer carrier 2 not only has revolution in the working face scope of lower millstone 1, and rotation arranged, thereby reach the purpose of grinding, when processed wafer 3 reaches target thickness, the frequency that the upper/lower electrode of popping one's head in by wafer grinding control instrument (ALC) 8 this moment records is target frequency, after reaching target frequency, wafer grinding control instrument (ALC) 8 is just controlled lower millstone 1 automatically and is stopped operating, thereby stops to grind.So just obtained the control of complete machine, do not need again qualified curved surface piezoelectric wafer manual processing, that reach target thickness.
Embodiment 2: referring to Fig. 5, Fig. 6, the present invention includes lower millstone 1, wafer carrier 2, wafer grinding control instrument (ALC) 8, top electrode 5 and the plastic coating 6 on top electrode 5 outer walls, the center of wafer carrier 2 has one to run through slightly larger in diameter up and down in the axial centre sky 4 of plastic coating 6, plastic coating 6 on top electrode 5 and its outer wall inserts in the axial center hole 4, the slightly larger in diameter of axial center hole 4 is in the diameter of plastic coating 6 and wafer 3, lower millstone 1 uses iron to make, wafer carrier 2 is to be that raw material is made with iron, top electrode 5 usefulness copper are that raw material is made, the bottom electrode end of the probe of lower millstone 1 connecting wafer grinding control instrument (ALC) 8, the bottom electrode end of the probe of top electrode 5 connecting wafer grinding control instrument (ALC) 8, the earthing pole ground connection of the probe of wafer grinding control instrument (ALC) 8.The wafer 3 that is machined to specified angle and diameter is positioned at the lower end of top electrode 5 and is enclosed within axial center hole 4, deadweight by top electrode 5 pushes the working face of wafer 3 to lower millstone 1, and the setting of plastic coating 6 is to keep insulation between top electrode 5 and the wafer carrier 2 in order to make.
The present invention at work, the target thickness of Jia Gong wafer calculates target frequency at first as required, and target frequency is set in wafer grinding control instrument (ALC) 8 in advance; Grind then, during grinding along with the axial rotation of lower millstone 1, drive wafer carrier 2 and top electrode 5 not only have the revolution along with the working face of lower millstone 1 in the working face of lower millstone 1, and have along the rotation at the center of wafer carrier 2, because top electrode 5 will be machined to the working face pushing of the wafer 3 of specified angle and diameter to lower millstone 1 by deadweight, thereby make wafer 3 that revolution also not only be arranged on the working face of lower millstone 1, and rotation is arranged, and then realization is to the grinding of wafer 3; When being ground to target thickness, the frequency that the upper and lower electrode tip of wafer grinding control instrument (ALC) 8 records has reached target frequency, and at this moment, wafer grinding control instrument (ALC) 8 stops to grind with regard to control device.So just obtained complete machine control, do not need again qualified curved surface piezoelectric wafer manual processing, that reach target thickness.
Embodiment 3: referring to Fig. 5, Fig. 6, the present invention includes lower millstone 1, wafer carrier 2, wafer grinding control instrument (ALC) 8, top electrode 5 and the plastic sheath 6 on top electrode 5 outer walls, the center of wafer carrier 2 has one to run through up and down slightly larger in diameter in the axial centre sky 4 of the diameter of the external diameter of plastic sheath 6 and wafer 3, plastic sheath 6 on top electrode 5 and its outer wall inserts in the axial center hole 4, the slightly larger in diameter of axial center hole 4 is in the diameter of plastic sheath 6, lower millstone 1 is cylinder iron to make for raw material, wafer carrier 2 is to be that raw material is made with iron, top electrode 5 uses copper to make as raw material, the bottom electrode end of the probe of lower millstone 1 connecting wafer grinding control instrument (ALC) 8, powering on of the probe of top electrode 5 connecting wafer grinding control instrument (ALC) 8 is extreme, the earthing pole ground connection of the probe of wafer grinding control instrument (ALC) 8.Workpiece to be machined wafer 3 is positioned at the lower end of top electrode 5 and is enclosed within axial center hole, and the deadweight by top electrode 5 is with the working face pushing of wafer 3 to lower millstone 1, and the setting of plastic sheath 6 is to keep insulation between top electrode 5 and the wafer carrier 2 in order to make.
The present invention at work, the target thickness of Jia Gong wafer calculates target frequency at first as required, and target frequency is set in wafer grinding control instrument (ALC) 8 in advance; Grind then, during grinding along with the axial rotation of lower millstone 1, drive wafer carrier 2 and top electrode 5 not only have the revolution along with the working face of lower millstone 1 in the working face of lower millstone 1, and have along the rotation at the center of wafer carrier 2, because top electrode 5 will be machined to the working face pushing of the wafer 3 of specified angle and diameter to lower millstone 1 by deadweight, thereby make wafer 3 that revolution also not only be arranged on the working face of lower millstone 1, and rotation is arranged, and then realization is to the grinding of wafer 3; When being ground to target thickness, the frequency that the upper and lower electrode tip of wafer grinding control instrument (ALC) 8 records has reached target frequency, and at this moment, wafer grinding control instrument (ALC) 8 stops to grind with regard to control device.So just obtained the control of complete machine, do not need again qualified curved surface piezoelectric wafer manual processing, that reach target thickness.
Embodiment 4: referring to Fig. 7, Fig. 8, the present invention includes lower millstone 1, wafer carrier 2, wafer grinding control instrument (ALC) 8, top electrode 5 and the plastic coating 6 on top electrode 5 outer walls, the coating 7 that outside plastic coating 6, also has one deck iron, the center of wafer carrier 2 has one to run through slightly larger in diameter up and down in the axial centre sky 4 of the diameter of iron coating 7 and wafer 3, top electrode 5 is together with the plastic coating on its outer wall 6, iron coating 7 is inserted in the axial center hole 4, lower millstone 1 is cylinder iron made for raw material, wafer carrier 2 is to be that raw material is made with iron, top electrode 5 is to be that raw material is made with copper, the bottom electrode end of the probe of lower millstone 1 connecting wafer grinding control instrument (ALC) 8, powering on of the probe of top electrode 5 connecting wafer grinding control instrument (ALC) 8 is extreme, the earthing pole ground connection of the probe of wafer grinding control instrument (ALC) 8.Workpiece to be machined wafer 3 is positioned at the lower end of top electrode 5 and is enclosed within axial center hole 4, deadweight by top electrode 5 pushes the working face of wafer 3 to lower millstone 1, the setting of plastic coating 6 is to keep insulation between top electrode 5 and the wafer carrier 2 in order to make, the purpose that iron coating 7 is set is in order to prevent the bonding between the wafer carrier 2 that plastic coating 6 and iron makes, increases the lubricities that top electrode 5 and wafer carrier 2 move each other.
The present invention at work, the target thickness of Jia Gong wafer calculates target frequency at first as required, and target frequency is set in wafer grinding control instrument (ALC) 8 in advance; Grind then, during grinding along with the axial rotation of lower millstone 1, drive wafer carrier 2 and top electrode 5 not only have the revolution along with the working face of lower millstone 1 in the working face of lower millstone 1, and have along the rotation at the center of wafer carrier 2, because top electrode 5 will be machined to the working face pushing of the wafer 3 of specified angle and diameter to lower millstone 1 by deadweight, thereby make wafer 3 that revolution also not only be arranged on the working face of lower millstone 1, and rotation is arranged, and then realization is to the grinding of wafer 3; When being ground to target thickness, the frequency that the upper and lower electrode tip of wafer grinding control instrument (ALC) 8 records has reached target frequency, and at this moment, wafer grinding control instrument (ALC) 8 stops to grind with regard to control device.So just obtained complete machine control, do not need again qualified curved surface piezoelectric wafer manual processing, that reach target thickness.
Embodiment 5: referring to Fig. 7, Fig. 8, the present invention includes lower millstone 1, wafer carrier 2, wafer grinding control instrument (ALC) 8, top electrode 5 and the plastic sheath 6 on top electrode 5 outer walls, an iron sheath 7 is arranged on the outer wall of plastic sheath 6, the center of wafer carrier 2 has one to run through slightly larger in diameter up and down in the external diameter of iron sheath 7 and the axial centre sky 4 of wafer diameter, plastic sheath 6 on top electrode 5 and its outer wall, iron sheath 7 inserts in the axial center hole 4, lower millstone 1 is cylinder iron to make for raw material, wafer carrier 2 is to be that raw material is made with iron, top electrode 5 is to be made of copper, the bottom electrode end of the probe of lower millstone 1 connecting wafer grinding control instrument (ALC) 8, powering on of the probe of top electrode 5 connecting wafer grinding control instrument (ALC) 8 is extreme, the earthing pole ground connection of the probe of wafer grinding control instrument (ALC) 8.Workpiece to be machined wafer 3 is positioned at the lower end of top electrode 5 and is enclosed within axial center hole 4, deadweight by top electrode 5 pushes the working face of wafer 3 to lower millstone 1, the setting of plastic sheath 6 is to keep insulation between top electrode 5 and the wafer carrier 2 in order to make, the purpose that iron sheath 7 is set is in order to prevent the bonding between the wafer carrier 2 that plastic sheath 6 and iron makes, increases mobile lubricity between top electrode 5 and the wafer carrier 2.
The present invention at work, the target thickness of Jia Gong wafer calculates target frequency at first as required, and target frequency is set in wafer grinding control instrument (ALC) 8 in advance; Grind then, during grinding along with the axial rotation of lower millstone 1, drive wafer carrier 2 and top electrode 5 not only have the revolution along with the working face of lower millstone 1 in the working face of lower millstone 1, and have along the rotation at the center of wafer carrier 2, because top electrode 5 will be machined to the working face pushing of the wafer 3 of specified angle and diameter to lower millstone 1 by deadweight, thereby make wafer 3 that revolution also not only be arranged on the working face of lower millstone 1, and rotation is arranged, and then realization is to the grinding of wafer 3; When being ground to target thickness, the frequency that the upper and lower electrode tip of wafer grinding control instrument (ALC) 8 records has reached target frequency, and at this moment, wafer grinding control instrument (ALC) 8 stops to grind with regard to control device.So just obtained complete machine control, do not need again qualified curved surface piezoelectric wafer manual processing, that reach target thickness.
Certainly, it is that raw material is made that lower millstone 1, wafer carrier 2 are not limited to iron, also can use other metal materials to make; Insulating coating 6 also is not limited to plastic coating or plastic sheath, also can be insulating materials such as pottery, rubber; Metal protection layer 7 also is not limited to iron coating or iron sheath, so long as and the coefficient of friction materials with smaller between the wafer carrier 2, all can be as the making of metal protection layer 7; Such variation all drops within protection scope of the present invention.
Claims (8)
1. polishing apparatus for curved surface piezoelectric wafer, comprise lower millstone (1), wafer carrier (2), it is characterized in that: also comprise wafer grinding control instrument (8), described lower millstone (1) and wafer carrier (2) are made for conducting metal, described lower millstone (1) connects the bottom electrode end of the probe of described wafer grinding control instrument (8), powering on of the probe of described wafer carrier (2) the described wafer grinding control instrument of connection (8) is extreme, the earthing pole ground connection of the probe of described wafer grinding control instrument (8).
2. polishing apparatus for curved surface piezoelectric wafer according to claim 1, it is characterized in that: also comprise top electrode (5) and the insulating protective layer (6) on described top electrode (5) outer wall, there is the axial center hole (4) of a penetrating slightly larger in diameter in the diameter of wafer (3) at the center of described wafer carrier (2), described top electrode (5) and insulating protective layer (6) insert in the described axial centre sky (4), and powering on of the probe of described wafer grinding control instrument (8) extremely is connected with described top electrode (5).
3. polishing apparatus for curved surface piezoelectric wafer according to claim 1 and 2 is characterized in that: described top electrode (5) uses copper to form, and described lower millstone (1) uses cast iron to make, and described wafer carrier (2) uses iron to make.
4. polishing apparatus for curved surface piezoelectric wafer according to claim 2 is characterized in that: the slightly larger in diameter of described axial center hole (4) is in the diameter of described insulating protective layer (6).
5. according to claim 2 or 4 described polishing apparatus for curved surface piezoelectric wafer, it is characterized in that: described insulating protective layer (6) is an insulating sheath.
6. polishing apparatus for curved surface piezoelectric wafer according to claim 2, it is characterized in that: also be included in the metal protection layer (7) on described insulating protective layer (6) outer wall, the slightly larger in diameter of described axial center hole (4) is in the diameter of described metal protection layer (7).
7. polishing apparatus for curved surface piezoelectric wafer according to claim 6 is characterized in that: described metal protection layer (7) is a protective metal shell.
8. according to claim 6 or 7 described polishing apparatus for curved surface piezoelectric wafer, it is characterized in that: the employed material of described metal protection layer (7) is an iron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201845388U CN201151076Y (en) | 2007-10-22 | 2007-10-22 | Polishing apparatus for curved surface piezoelectric wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201845388U CN201151076Y (en) | 2007-10-22 | 2007-10-22 | Polishing apparatus for curved surface piezoelectric wafer |
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| Publication Number | Publication Date |
|---|---|
| CN201151076Y true CN201151076Y (en) | 2008-11-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNU2007201845388U Expired - Fee Related CN201151076Y (en) | 2007-10-22 | 2007-10-22 | Polishing apparatus for curved surface piezoelectric wafer |
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| CN (1) | CN201151076Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102909641A (en) * | 2012-11-09 | 2013-02-06 | 昆山市大金机械设备厂 | Dome polishing device |
| CN104942685A (en) * | 2015-07-15 | 2015-09-30 | 国家电网公司 | Device for grinding ultrasonic wave guide probe |
-
2007
- 2007-10-22 CN CNU2007201845388U patent/CN201151076Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102909641A (en) * | 2012-11-09 | 2013-02-06 | 昆山市大金机械设备厂 | Dome polishing device |
| CN104942685A (en) * | 2015-07-15 | 2015-09-30 | 国家电网公司 | Device for grinding ultrasonic wave guide probe |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081119 Termination date: 20131022 |