CN201130669Y - HIT solar cell lighting on two surfaces - Google Patents
HIT solar cell lighting on two surfaces Download PDFInfo
- Publication number
- CN201130669Y CN201130669Y CNU2007200677328U CN200720067732U CN201130669Y CN 201130669 Y CN201130669 Y CN 201130669Y CN U2007200677328 U CNU2007200677328 U CN U2007200677328U CN 200720067732 U CN200720067732 U CN 200720067732U CN 201130669 Y CN201130669 Y CN 201130669Y
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- China
- Prior art keywords
- amorphous silicon
- film
- sic
- type
- hit solar
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The utility model relates to a new type HIT solar battery structure with both sides illumination, two layers of intrinsic amorphous silicon film (i a-Si) are respectively deposited on the two sides of a N-shaped monocrystalline silicon wafer, then a P-shaped hydrogenation amorphous silicon carbide film (p a-SiC:H) is deposited on the front intrinsic amorphous silicon film, a N-shaped hydrogenation amorphous silicon carbide film (n a-SiC:H) or an N-shaped microcrystalline silicon film (n uc-Si) is deposited on the back intrinsic amorphous silicon film, then an ITO transparent conductive film is respectively plated on the two sides, the front and back metal electrodes are prepared by screen printing, the metal is sintered, i.e. electrode metallization. The new type HIT solar battery structure has the advantages of very high conversion efficiency and good stability.
Description
Technical field
The utility model relates to a kind of HIT solar battery structure.
Background technology
On the market, silicon chip holds at high price now, and the cost of silion cell is high, reduce the cost of silion cell, a direction is the turning film battery production, and another direction is to be devoted to improve the transformation efficiency of silion cell, and the purpose of this utility model is to improve the transformation efficiency of silion cell.
Summary of the invention
Be the technical problem of the transformation efficiency that solves aforementioned raising silion cell, the utility model provides a kind of HIT solar cell of the photograph of pleasing both parties; The structure of this solar cell is on the intrinsic amorphous silicon film ia-Si of the front of n type single crystal silicon sheet, to deposit P type hydrogenated amorphous silicon carbide film pa-SiC:H; On the intrinsic amorphous silicon film ia-Si of the back side of n type single crystal silicon sheet,
A, deposition N type hydrogenated amorphous silicon carbide film na-SiC:H forms N/N+ and just ties; Perhaps
B, deposition N type microcrystalline silicon film n uc-Si forms N/N+ and just ties.
The front and back of this solar cell all adopts indium tin oxide target transparent conductive film ITO and palisade Al as electrode.
The utility model has the advantages that battery front side replaces P type amorphous silicon hydride (p a-Si:H) with P type hydrogenated amorphous silicon carbide (pa-SiC:H).Hydrogenated amorphous silicon carbide (a-SiC:H) is compared with amorphous silicon hydride (a-Si:H), can be with and widen, and more helps absorbing sunlight, improves the effect as Window layer.Cell backside is just tied with N type hydrogenated amorphous silicon carbide (n a-SiC:H) and is replaced N type amorphous silicon hydride (n a-Si:H), also is in order to improve the effect as back side Window layer.Replace N type amorphous silicon hydride (n a-Si:H) with N type microcrystal silicon (n uc-Si), help improving the stability of battery.
Description of drawings
Accompanying drawing is a layer structural representation of the present utility model.
The drawing reference numeral explanation:
1--is an Al metal grid lines positive electrode;
2--is positive indium tin oxide target transparent conductive film (ITO);
3--is a P type hydrogenated amorphous silicon carbide film (p a-SiC:H);
4--is positive intrinsic amorphous silicon film (i a-Si);
5--is n type single crystal silicon sheet (n c-Si);
6--is the intrinsic amorphous silicon film (i a-Si) at the back side;
7--is a N type hydrogenated amorphous silicon carbide film (n a-SiC:H);
8--is the indium tin oxide target transparent conductive film (ITO) at the back side;
9--is an Al metal grid lines back electrode.
Embodiment
The utility model is pressed each layer of accompanying drawing structure, utilizes straight flow magnetic control sputtering device plating ito thin film 50～100nm, deposition P type hydrogenated amorphous silicon carbide film (pa-SiC:H), and thickness is 3～20nm; The intrinsic amorphous silicon film (i a-Si) that deposition is positive, thickness is 3～20nm; Deposition n type single crystal silicon sheet (n c-Si), thickness is 200～300um, resistivity is 0.2～15 Ω .cm, minority carrier life time 1～100us; The intrinsic amorphous silicon film (i a-Si) at the deposition back side, thickness is 3～20nm; Deposition N type hydrogenated amorphous silicon carbide film (n a-SiC:H), thickness 3～20nm, perhaps: deposition N type microcrystalline silicon film (n uc-Si), thickness 5～20nm; The indium tin oxide target transparent conductive film (ITO) at the back side, thickness is 50～100nm.
Specific embodiment is:
1. cleaning
Monocrystalline silicon piece polishes with CP4, and the silicon chip after the cleaning is a burnishing surface, requires surface-brightening, immaculate, cut, water mark, and the silicon chip surface clean level requires very high.
2. pecvd process
Flat-plate type PECVD will be distinguished deposition intrinsic amorphous silicon membrane (i a-Si), P type hydrogenated amorphous silicon carbide film (p a-SiC:H), N type hydrogenated amorphous silicon carbide film (n a-SiC:H) or N type microcrystalline silicon film (n uc-Si), and depositing temperature is lower than 300 ℃.
3. magnetron sputtering technique
Utilize straight flow magnetic control sputtering device plating ito thin film 50～100nm, light transmittance is greater than 85%;
4. silk-screen sintering process
With screen printer print low temperature aluminium paste, low-temperature sintering becomes electrode again.Whole manufacture craft is very crucial to temperature controlling, so requirement is very strict, maximum temperature is not above 300 ℃.Front and back electrode symmetry is printed.
Claims (2)
1. the HIT solar cell of the photograph of pleasing both parties is characterized in that, on the intrinsic amorphous silicon film ia-Si of the front of n type single crystal silicon sheet, and deposition P type hydrogenated amorphous silicon carbide film pa-SiC:H; On the intrinsic amorphous silicon film ia-Si of the back side of n type single crystal silicon sheet,
A, deposition N type hydrogenated amorphous silicon carbide film na-SiC:H forms N/N+ and just ties; Perhaps
B, deposition N type microcrystalline silicon film nuc-Si forms N/N+ and just ties.
2. by the HIT solar cell of the described photograph of pleasing both parties of claim 1, it is characterized in that front and back all adopts indium tin oxide target transparent conductive film ITO and palisade Al as electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200677328U CN201130669Y (en) | 2007-03-09 | 2007-03-09 | HIT solar cell lighting on two surfaces |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200677328U CN201130669Y (en) | 2007-03-09 | 2007-03-09 | HIT solar cell lighting on two surfaces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201130669Y true CN201130669Y (en) | 2008-10-08 |
Family
ID=40018533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007200677328U Expired - Lifetime CN201130669Y (en) | 2007-03-09 | 2007-03-09 | HIT solar cell lighting on two surfaces |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201130669Y (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102136517A (en) * | 2011-02-21 | 2011-07-27 | 芜湖明远新能源科技有限公司 | Crystalline silicon heterojunction lamination solar cell and manufacture method thereof |
| CN102299206A (en) * | 2011-08-30 | 2011-12-28 | 南京航空航天大学 | Heterojunction solar cell and manufacturing method thereof |
| CN102522446A (en) * | 2011-12-30 | 2012-06-27 | 常州天合光能有限公司 | HIT solar cell structure and manufacturing method thereof |
| CN103000741A (en) * | 2012-11-21 | 2013-03-27 | 国电光伏(江苏)有限公司 | Black heterogeneous crystalline cell and manufacture method thereof |
| CN104393066A (en) * | 2014-11-28 | 2015-03-04 | 常州天合光能有限公司 | Solar cell apparatus structure with point contact structure and preparation method of solar cell apparatus structure |
| CN105244402A (en) * | 2015-10-14 | 2016-01-13 | 广东爱康太阳能科技有限公司 | Efficient heterojunction solar cell and manufacturing method thereof |
| RU2590284C1 (en) * | 2015-04-10 | 2016-07-10 | Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике при ФТИ им. А.Ф. Иоффе", ООО "НТЦ ТПТ" | Solar cell |
| RU2632266C2 (en) * | 2016-02-09 | 2017-10-03 | Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике при ФТИ им. А.Ф. Иоффе", ООО "НТЦ ТПТ" | Heterostructure photoelectric converter based on crystalline silicon |
-
2007
- 2007-03-09 CN CNU2007200677328U patent/CN201130669Y/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102136517A (en) * | 2011-02-21 | 2011-07-27 | 芜湖明远新能源科技有限公司 | Crystalline silicon heterojunction lamination solar cell and manufacture method thereof |
| CN102299206A (en) * | 2011-08-30 | 2011-12-28 | 南京航空航天大学 | Heterojunction solar cell and manufacturing method thereof |
| CN102299206B (en) * | 2011-08-30 | 2013-11-06 | 南京航空航天大学 | Heterojunction solar cell and manufacturing method thereof |
| CN102522446A (en) * | 2011-12-30 | 2012-06-27 | 常州天合光能有限公司 | HIT solar cell structure and manufacturing method thereof |
| CN102522446B (en) * | 2011-12-30 | 2014-02-26 | 常州天合光能有限公司 | HIT solar cell structure and manufacturing method thereof |
| CN103000741A (en) * | 2012-11-21 | 2013-03-27 | 国电光伏(江苏)有限公司 | Black heterogeneous crystalline cell and manufacture method thereof |
| CN104393066A (en) * | 2014-11-28 | 2015-03-04 | 常州天合光能有限公司 | Solar cell apparatus structure with point contact structure and preparation method of solar cell apparatus structure |
| RU2590284C1 (en) * | 2015-04-10 | 2016-07-10 | Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике при ФТИ им. А.Ф. Иоффе", ООО "НТЦ ТПТ" | Solar cell |
| CN105244402A (en) * | 2015-10-14 | 2016-01-13 | 广东爱康太阳能科技有限公司 | Efficient heterojunction solar cell and manufacturing method thereof |
| RU2632266C2 (en) * | 2016-02-09 | 2017-10-03 | Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике при ФТИ им. А.Ф. Иоффе", ООО "НТЦ ТПТ" | Heterostructure photoelectric converter based on crystalline silicon |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20081008 |
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| CX01 | Expiry of patent term |