CN200984581Y - 一种反应腔内壁清扫装置 - Google Patents
一种反应腔内壁清扫装置 Download PDFInfo
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- CN200984581Y CN200984581Y CN 200620049606 CN200620049606U CN200984581Y CN 200984581 Y CN200984581 Y CN 200984581Y CN 200620049606 CN200620049606 CN 200620049606 CN 200620049606 U CN200620049606 U CN 200620049606U CN 200984581 Y CN200984581 Y CN 200984581Y
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- reaction chamber
- cleaning
- clearing apparatus
- chamber inwall
- inwall
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Application Number | Priority Date | Filing Date | Title |
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CN 200620049606 CN200984581Y (zh) | 2006-12-27 | 2006-12-27 | 一种反应腔内壁清扫装置 |
Applications Claiming Priority (1)
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CN 200620049606 CN200984581Y (zh) | 2006-12-27 | 2006-12-27 | 一种反应腔内壁清扫装置 |
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CN200984581Y true CN200984581Y (zh) | 2007-12-05 |
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CN 200620049606 Expired - Lifetime CN200984581Y (zh) | 2006-12-27 | 2006-12-27 | 一种反应腔内壁清扫装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106957064A (zh) * | 2016-01-12 | 2017-07-18 | 云南冶金新立钛业有限公司 | 急冷塔堵塞清理组件及其应用 |
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2006
- 2006-12-27 CN CN 200620049606 patent/CN200984581Y/zh not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106957064A (zh) * | 2016-01-12 | 2017-07-18 | 云南冶金新立钛业有限公司 | 急冷塔堵塞清理组件及其应用 |
CN106957064B (zh) * | 2016-01-12 | 2018-06-19 | 云南冶金新立钛业有限公司 | 急冷塔堵塞清理组件及其应用 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130318 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
TR01 | Transfer of patent right |
Effective date of registration: 20130318 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CX01 | Expiry of patent term |
Granted publication date: 20071205 |
|
EXPY | Termination of patent right or utility model |