CN1998069A - Method of plasma etch endpoint detection using a V-I probe diagnostics - Google Patents
Method of plasma etch endpoint detection using a V-I probe diagnostics Download PDFInfo
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- CN1998069A CN1998069A CNA2005800104724A CN200580010472A CN1998069A CN 1998069 A CN1998069 A CN 1998069A CN A2005800104724 A CNA2005800104724 A CN A2005800104724A CN 200580010472 A CN200580010472 A CN 200580010472A CN 1998069 A CN1998069 A CN 1998069A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Abstract
A plasma processing control system including a V-I probe for effectively monitoring a plasma processing chamber, where the probe can provide electrical parameters in response to a radio frequency (RF) supply (e.g., about 2 MHz, about 27 MHz, or about 60 MHz), a processor coupled to and/or included with a commercially available probe product that can provide harmonics for each of the electrical parameters, and a controller coupled to the processor that can select one of the electrical parameters and one of the associated harmonics for endpoint detection for a plasma processing step is disclosed. The electrical parameters can include voltage, phase, and current and the plasma processing application can be dielectric etching. A system according to embodiments of the invention may be particularly suited for dielectric etching in a production environment.
Description
Technical field
The present invention relates in general to method and the control system that is used to improve the semiconductor machining effect, relates in particular to the method that is used to detect the dielectric etch terminal point.
Background technology
Plasma processing system by widespread usage a period of time.In the past few years, adopt the plasma processing system of inductively-coupled plasma sources, electron cyclotron resonace (ECR) source, capacitive source (capacitivesource) etc. to be introduced into and to be applied to processing semiconductor substrate and glass plate to some extent.
During processing, be usually directed to a plurality of depositions and/or etching step.Between depositional stage, deposit a material on (as the surface of glass plate or wafer) on the substrate surface.For example, sedimentary deposit and/or the grown layer that comprises various forms of silicon, silicon dioxide, silicon nitride, metal etc. can be formed on the substrate surface.In contrast, carry out etching in case the presumptive area from the substrate surface with material selectivity remove.For example, etched characteristic (or shape) can be formed in the layer of substrate as through hole (via), contact (contact) and/or groove.Some etching and processing can adopt the chemical method and/or the parametric method (parameter) of etching and deposited film on the surface of plasma dignityization (plasma-facing) simultaneously.
Can use various method of generating plasma (comprising inductance coupling high, ECR, microwave, capacitance coupling plasma method) to produce and/or keep plasma.A kind of example of plasma processing system of capacitive coupling type is shown in Figure 1, and represents with blanket drawing reference numeral 150.Many parts of plasma processing system 150 are common, and can find in for example Exelan_ plasma etcher series (for example, 2300 Exelan_Flex), and it can be from Lam Research Corporation of Fremont, and CA obtains.
In Fig. 1, plasma processing system 150 comprises chamber 100, the outer cover that it is provided for processing, and limit discharge-channel by means of vacuum pump (for example, " pump ") and be used to discharge etch byproducts.In this exemplary system of processing, chamber 100 is a ground connection.Top electrode 104 (it also is electrical ground in example shown in Figure 1) plays the effect of etchant source of the gas (for example, " unstripped gas ") distribution mechanism.The etchant source of the gas is incorporated in the chamber by inlet, and is distributed in the plasma slab between top electrode 104 and electrostatic chuck (ESC) 108, electrostatic chuck is set at the top of bottom electrode 106.The wafer 109 that is used to process is positioned at ESC 108.
Bottom electrode 106 is by radio frequency (RF) transfer system excitation (exciting), and radio frequency (RF) transfer system comprises RF matching network 110 and RF power supply 118.V-I probe (Probe) 112 is coupled to 110 outputs of RF matching network, so that the parameter that is provided by RF power supply 118 is provided, is used for the purpose of FEEDBACK CONTROL.In example shown in Figure 1, RF power supply 118 supplies power to bottom electrode 106 with about 2MHz and about 27MHz frequency.When the RF power supply was supplied the RF electric energy to bottom electrode 106 and by ESC 108, plasma was initiated, and remains on the plasma slab 102 that is used for etched wafer 109.
Probe sensor (V-I probe 112) is positioned at the downstream of RF power supply, and usually as far as possible near ESC.Yet, may have the maintenance relation (maintenance concern) of restriction ESC near the probe that can be positioned.As an example, V-I probe 112 can be apart from 8～9 inches of ESC.V-I probe 112 and digital signal processor (DSP) 114 can be the part of complete business product.A kind of so commercially available probe product is VI-PROBE-4100 frequency scanning probe _ (VI-PROBE-4100 FrequencyScanning Probe_), it can be from MKS Instruments, Inc., Andover, the MKS ENI Products of MA is commercially available.Another kind of so commercially available probe product is SmartPIM
TM, it can be from Dublin, the Straatum Processware of Ireland, and (preceding Scientific Systems Ltd.) obtains Ltd..For various RF supply frequencies, every kind of such commercial product all can detect voltage, electric current and phase parameter information.In addition, in DSP, by means of fast fourier transform (Fast Fourier Transform, FFT) or every kind of harmonic wave (harmonic) that all can be provided for these parameters of other suitable method.Therefore, the signal 122 of plasma processing system can comprise each all corresponding harmonic wave by the parameter of V-I probe 112 measurements.Then, etch process module controller (Etch ProcessModule Controller) 116 can utilize these information to control one or more plasma process steps.
The conventional process control that is used for etch application in plasma system is end point determination.The conventional method that is used to measure terminal point comprises: (1) laser interferometry and reflectivity method; (2) optical emission spectroscopy method (luminescent spectrum method); (3) Direct observation; (4) mass spectrography; And (5) time-based prediction.Up to the present, optical emission spectroscopy method or optical means are most popular methods in the traditional plasma processing method.For multiple procedure of processing, such as the application (for example metal) of exposed region about 50%, luminous can carrying out subtly.Yet the sensitivity of this method is subjected to rate of etch and treats the remarkable restriction of the etching gross area.Especially, for high aspect ratio (depth-to-width ratio) etching (as through hole), it is unreliable usually that optical end point detects.Many such dielectric etch have low-down exposed area usually, as may only being 1% of oxide or dielectric film total surface area.Optical means becomes more and more unreliable as being used for these application technology standards (technology scale).
Especially recent, be used to attempt endpoint detection from the application of the parameter of aforesaid commercially available probe system.Such method utilizes special parameter (being generally basic waveform) to be used for end point determination usually.Yet for dissimilar etchings and/or procedure of processing, such method may not be the sensitiveest end-point detection method also.Therefore, known method may not be fit to production environment well.The FAQs of known method is included between wafer and wafer Deviation Control in (wafer-to-wafer) production environment, and the muting sensitivity in low exposed area etching and processing step.
Thereby needed be can adapt at the different etching steps in the technology and optimization be suitable for production environment end-point detection method flexibly.Especially, need use in (as the dielectric etch procedure of processing) the more method of reliable detection terminal point at some.
Summary of the invention
According to one embodiment of present invention, the plasma process control system can comprise: the V-I probe, and it is used for detecting effectively plasma process chamber, wherein this probe can be in response to radio frequency (RF) power supply (for example, about 2MHz, about 27MHz, perhaps about 60MHz) and electrical quantity is provided; Processor, its couple (coupling) to and/or comprise the commercially available probe product of the harmonic wave that can be provided for each electrical quantity; And controller, it couples (coupling) to processor, and this processor can be selected at least a electrical quantity and at least a corresponding harmonic wave that is used for plasma process application end point determination.Electrical quantity can comprise voltage, phase place, electric current, and the plasma process application can be a dielectric etch.Be particularly suited for dielectric etch in production environment according to the system of the embodiment of the invention.
According to another embodiment of the invention, a kind of method that is used for endpoint detection can comprise the method for making the end point determination Calibration Method and carrying out the production environment end point determination.Making the end point determination Calibration Method can may further comprise the steps: (i) carry out plasma etching on sample wafer; The harmonic diagram of (ii) determining to experience to select is with endpoint detection; And the harmonic parameters that (iii) obtains directing terminal.The method of carrying out the production environment end point determination may further comprise the steps: (i) carry out plasma etching on the production wafer; (ii) obtain the harmonic curve of selection; (iii) analyze the harmonic curve of selection with endpoint detection; (iv), continue plasma etching as not detecting terminal point; If (v) detect terminal point, interrupt plasma etching; And (vi) carry out behavior (process behind the terminal point, post-endpoint activity) behind any terminal point.
In the specific embodiment of the present invention part,, will be described in more detail these and other characteristic of the present invention below in conjunction with following accompanying drawing.
Description of drawings
The present invention will be described among each secondary figure in the accompanying drawings for the mode by embodiment rather than the mode of restriction, the corresponding components identical of wherein identical drawing reference numeral, wherein:
Fig. 1 is the cross-sectional view with traditional plasma system of processing of V-I probe.
Fig. 2 is the flow chart of manufacturing laboratory end point determination calibration steps according to an embodiment of the invention.
Fig. 3 is the flow chart of production environment end-point detection method according to an embodiment of the invention.
Fig. 4 is the voltage harmonic oscillogram that is used for end point determination according to an embodiment of the invention.
Fig. 5 is the phase place harmonic wave forms figure that is used for end point determination according to an embodiment of the invention.
Fig. 6 is the current harmonics oscillogram that is used for end point determination according to an embodiment of the invention.
Fig. 7 shows the embodiment that comprises a plurality of V-I probes according to one embodiment of present invention.
Embodiment
Several preferred embodiments of the present invention with reference to as shown in the figures describes the present invention now.In the following description, many details have been described so that complete understanding of the present invention is provided.Yet obviously for a person skilled in the art, some or all that does not have these details also can be implemented the present invention.In other words, well-known processing step and/or structure do not describe in detail, so that be not optionally fuzzy the present invention.With reference to accompanying drawing and following discussion, characteristics that the present invention may be better understood and advantage.
As mentioned above, the V-I probe can be used to measure electric current, voltage and phase parameter thereof.In addition, all can be determined by each harmonic wave of signal processing (for example, the DSP among Fig. 1 114).These harmonic waves (comprising primary harmonic or first harmonic) can be considered to be used in according to an embodiment of the invention in the end-point detection method.In addition, the selection as the different frequency that is provided by RF power supply 118 for example shown in Figure 1 is provided these methods.Method according to the embodiment of the invention makes the given RF frequency that is chosen in of concrete parameter and corresponding harmonic wave be suitable for end point determination most.For example, in specific embodiment, the second harmonic that is used for the RF voltage of signals parameter of about 2MHz is used for endpoint detection reliably.System of selection for this frequency, harmonic wave and the parameter of the end point determination of specific application optimizationization will be discussed hereinafter in more detail.
According to embodiments of the invention, a kind of manufacturing end point determination calibration steps and production environment end-point detection method are provided.Usually, making the end point determination calibration steps can be with respect to selecting preferred harmonic and parameter at the given frequency that is used for end point determination.In addition, the production environment end-point detection method can be with respect to the technology controlling and process that is used in the end point determination of the various processing steps of production environment.
In the manufacturing laboratory environment, as follows according to the conventional method of the embodiment of the invention.Can carry out a plurality of wafers (for example 2 to 100 s') test etching.Each obtainable harmonic wave (comprising primary harmonic) is tested, can provide the harmonic wave of optimum signal at terminal point so that determine parameter.In addition, in order to consider the process deviation in production environment, should select to be used to test etched suitable wafer.For example, can select " name (nominal) " process wafer so that determine to detect the center at edge (margin) best.
Referring now to Fig. 2, show flow chart according to the manufacturing laboratory end point determination calibration steps of the embodiment of the invention, and with blanket drawing reference numeral 200 expressions.Flow process is from beginning 202 beginnings.Then, the substrate of test wafer or sample wafer can the etched given time (step 204).Then, determine that by for example " experience ground " method (step 206) can determine etched terminal time.A kind of mode of determining to experience the terminal point of sample wafer is by carry out scanning electron microscopy (SEM) analysis in the location of etch of sample wafer.Such terminal point is pre-surely with respect to " the accurately position " of the end point determination time on each harmonic curve.Therefore, can there be the predetermined way (for example, the sem analysis of sample wafer) of determining terminal point, observes all obtainable curves then, so that the curve of best respective destinations indicant (indicator) is determined to provide in experience ground.
Then, if do not detect terminal point, then decision box 208 can be back to 204 by transmission flow.In addition, the overstep of end point time flow can carry out new substrate etching, and record V-I probe signals (step 210).Then, the harmonic curve (comprising voltage, electric current and phase parameter) of given RF frequency is analyzed and compared, so that determine near the sensitive signal (step 212) of terminal point known terminal time.Then, definition terminal point harmonic wave algorithm (step 214).Certainly, in some applications, first harmonic or basic waveform can be optimal for the end point determination according to each embodiment.In one embodiment, found in about 2 MHz power supplys, to be used for the second harmonic of voltage parameter, to be provided for the best end point determination that dielectric etch is used.In addition, step 214 can comprise that selection found the mathematical method (that is, " algorithm ") of terminal point by selected harmonic wave.Like this possible algorithm or method will be discussed below in more detail.In one embodiment, selected algorithm and harmonic wave/parameter combinations can be programmed in the software that is installed in etch process module controller 116 for example shown in Figure 1.Get back to Fig. 2, flow process can continue, and carries out new substrate etching (step 216).Then, use independently method (or device) verification terminal point accuracy (step 218).Flow process can be finished in step 220.
Referring now to Fig. 3, show flow chart according to the production environment end-point detection method of the embodiment of the invention, and with blanket drawing reference numeral 350 expressions.Flow process is from beginning 300 beginnings.At first, loaded with wafers (step 302).Then, beginning etching (step 304) on wafer.Then, can etching substrates (for example, producing the substrate of wafer), monitor V-I probe signals (step 306) simultaneously.Then, measure V-I signal (step 308), analyze then (step 310).Analysis can comprise uses traditional algorithm to detect the terminal point from curve.In addition, can use (various) method, such as the variation of slope detection, amplitude ratio or can be used for any standard technique of traditional optical detection method, comprise polynary (multivariable) technology (multivariate technique) of comprehensive multiple signal (for example voltage and phase place).In addition, time window can be attached in the detection method, thereby make that the terminal time scope of wherein expection can be outstanding on harmonic curve effectively.More detailed content from the end point determination of curve is discussed hereinafter with reference to Fig. 4.
In Fig. 3, after step 310, if also do not detect terminal point, then decision box 312 transmission flows are to continuing etched step 314.Then, flow process can proceed to step 308 from step 314.If detect terminal point, then can carry out behavior behind the terminal point (activation, post-endpoint activity), as additional period cycle of etching appointment or substitute other chemicals or any other processing behavior (step 316).Flow process can be finished in step 318.
According to embodiments of the invention, many operable possibility technical recipes (process recipe) and wafer stacking combination are arranged.An employed exemplary formulations is shown in the following table in the test method according to the embodiment of the invention.Fig. 4-6 shows corresponding harmonic wave forms, and goes through hereinafter.
| Through hole (oxygen): | |
| BARC： | 450mT/0W27/800W2/O2/CH3F/200CO/N2/ |
| Main etching: | 50mT/2500W(27)/3500W(2)/Ar/C4F8/O2/CH2F2/CO/ |
| Peel off (strip) 1: | 150mT/200W(27)/0W(2)/O2/CO/ |
| Peel off 2: | 400mT/0W(27)/600W(2)/O2/CO/ |
| No wafer cleans automatically: | 700mT/500W(27)/0W(2)/O2 |
| SEM wafer stacking information: Sematech patterned wafers: 61nm BARC/10KA TEOS/1KA TiN/Si | |
Referring now to Fig. 4, show the voltage harmonic oscillogram that is used for end point determination according to the embodiment of the invention, and with blanket drawing reference numeral 400 expressions.This is an example waveform snapshots in time, shows the primary harmonic that is used for end point determination or the possibility of second harmonic curve.As mentioned above, commonsense method can be used to determine the preferred harmonic of the parameter (for example, voltage, electric current or phase place) under given RF frequency.Usually, the characteristic that can make a waveform be better than another waveform comprises: near the peak swing the terminal point changes, and (wafer-to-wafer) can repeat to change with reproducible peak swing between wafer and wafer.This repeatability is important characteristic for production environment.
In Fig. 4, waveform 402 shows first harmonic (the being primary harmonic) curve of the voltage parameter of the RF frequency that is used for about 27MHz.According to this figure, terminal point is defined as corresponding to zone 406.Make this definite a kind of such method for seeking the algorithm of the minimum value (trough) on the curve, may comprise filtering so that little variation (upper frequency) is level and smooth.In addition, as mentioned above, delay factor can be used for " drawing together " or form near the terminal point window, takes place before or after a bit at certain because people can not in time predict terminal point.Other possibility method comprises utilizes signal amplitude difference, derived function, ratio or any other standard technique.Etch process module controller 116 among Fig. 1 for example can carry out filtering and be used for the identification of the minimum value of end point determination, as by the sequencing of software control.In Fig. 4, waveform 404 shows the second harmonic curve of the voltage parameter of the RF frequency that is used for about 2MHz.Similarly, as illustrated, waveform shows the characteristic that is used for determining terminal point.Therefore, according to embodiments of the invention, waveform 402 or waveform 404 can be chosen effectively, and are used for end point determination.
Referring now to Fig. 5, show the phase place harmonic wave forms figure that is used for end point determination according to the embodiment of the invention, and with blanket drawing reference numeral 500 expressions.Waveform 502 shows first harmonic (the being primary harmonic) curve of the phase parameter of the RF frequency that is used for about 27MHz.As indicate, can determine terminal point according to this figure.Waveform 504 shows the second harmonic curve of the phase parameter of the RF frequency that is used for about 2MHz.As from finding out the figure, be used for about 2 MHz phase parameter second harmonic curve ratio and be used for about 27MHz phase parameter primary harmonic curve and determine that terminal point is more difficult.Therefore, can select other parameter and/or harmonic wave to determine terminal point for about 2MHz RF power supply.
Referring now to Fig. 6, show the current harmonics oscillogram that is used for end point determination according to the embodiment of the invention, and with blanket drawing reference numeral 600 expressions.Waveform 602 shows the second harmonic curve of the current parameters of the RF frequency that is used for about 2MHz.As indicate, can determine terminal point according to this figure.Therefore, voltage, phase place and current parameters each all have the harmonic wave that is suitable for according to the end point determination of the embodiment of the invention.In other was used, other parameter and/or harmonic wave can provide best end point determination curve.
For the system of RF power supply being provided for simultaneously top electrode and bottom electrode, the V-I probe can be provided with bottom electrode separately, is provided with top electrode separately, perhaps is provided with two electrodes.Fig. 7 shows interchangeable embodiment, and wherein V-I probe 732 and corresponding D SP734 are provided with current electrode 704.V-I probe 712 and DSP 714 are provided with down current electrode 708.Last current electrode 704 also is provided with relevant parts, comprises that RF matching network 730, RF power supply 728 and top electrode insulator 738 are used to make the top electrode 704 and the chamber 700 of ground connection to insulate.In the embodiment shown in fig. 7, endpoint signal can be by V-I probe 712, V-I probe 732 or by two V-I probe measurements.
Although invention has been described by several preferred embodiments, the change, replacement and the equivalent that exist all fall within the scope of the present invention.For example, there are three parameters in the exemplary embodiment: voltage, phase place and electric current, still can adopt the combination of the parameter and/or the parameter of any suitable quantity.In addition, can preferred different harmonic waves, and a system or to use with another can be different, can for different systems or application experience determine.Equally, can obtain more phase system harmonic wave, improve as the V-I probe system, therefore, so obtainable harmonic wave also within the scope of the invention.As further example, harmonic curve such as the 5th, the 6th, the 7th can provide the most effective end point determination according to the embodiment of the invention.Although the RF frequency of about 2MHz, about 27MHz and about 60MHz is mentioned as exemplary RF frequency, also can adopts any other RF frequency or can be used for the frequency of the adequate types of plasma processing system as other example.Should be noted that the replaceable mode that has many enforcements system of the present invention or method.Therefore, appending claims is interpreted as comprising all these changes, replacement and the equivalent that falls within connotation of the present invention and the scope.
Claims (22)
1. plasma process control system comprises:
Probe is coupled on the electrode and radio frequency (RF) generator of plasma process chamber, and wherein, described probe is configured to provide the data relevant with electrical parameters when described RF generator is excited;
Processor is coupled on the described probe, and is constructed to each described electrical parameters multiple harmonic wave is provided;
Controller is coupled on the described processor, and the predetermined a kind of harmonic wave of multiple harmonic wave that is configured to select a kind of electrical quantity predetermined in the described electrical parameters and is used for the end point determination of plasma process step.
2. plasma process control system according to claim 1, wherein, described RF generator provides the frequency of about 2MHz.
3. plasma process control system according to claim 1, wherein, described RF generator provides the frequency of about 27MHz.
4. plasma process control system according to claim 1, wherein, described RF generator provides the frequency of about 60MHz.
5. plasma process control system according to claim 1, wherein, described electrical parameters comprises voltage.
6. plasma process control system according to claim 1, wherein, described electrical parameters comprises phase place.
7. plasma process control system according to claim 1, wherein, described electrical parameters comprises electric current.
8. plasma process control system according to claim 5, wherein, described multiple harmonic wave comprises first and second harmonic waves.
9. plasma process control system according to claim 6, wherein, described multiple harmonic wave comprises first and second harmonic waves.
10. plasma process control system according to claim 7, wherein, described multiple harmonic wave comprises first and second harmonic waves.
11. plasma process control system according to claim 1, wherein, a kind of harmonic wave predetermined in the described multiple harmonic wave is not a first harmonic.
12. plasma process control system according to claim 1, wherein, described plasma process step comprises dielectric etch.
13. a method that is used to detect the terminal point of plasma process chamber ionic medium body procedure of processing comprises:
Receive first data, the given harmonic wave of electrical quantity that described first data identification is given and described given electrical quantity;
The plasma process control system is provided, comprises:
Probe is coupled on the electrode and radio frequency (RF) generator of described plasma process chamber, wherein, described probe structure is become when described RF generator is excited, and second data relevant with electrical parameters are provided;
And
Processor, be coupled on the described probe, and be configured to provide the 3rd data from second data, described the 3rd data are relevant with the concrete harmonic wave of a kind of concrete electrical quantity of described electrical parameters, described concrete electrical quantity and described given electrical quantity are same type, and described concrete harmonic wave and described given harmonic wave are same stages; And
Adopt described the 3rd data to be used for described detection.
14. method according to claim 13, wherein, described first data also comprise the parameter of the desirable terminal point characteristic in the given harmonic wave that is identified in described given electrical quantity.
15. method according to claim 14, wherein, described given harmonic wave is not the first order harmonic wave of described given electrical quantity.
16. method according to claim 15, wherein, described RF generator provides the frequency of about 2MHz.
17. method according to claim 15, wherein, described RF generator provides the frequency of about 27MHz.
18. method according to claim 15, wherein, described RF generator provides the frequency of about 60MHz.
19. method according to claim 15, wherein, described electrical parameters comprises voltage.
20. method according to claim 15, wherein, described electrical parameters comprises phase place.
21. method according to claim 15, wherein, described electrical parameters comprises electric current.
22. method according to claim 15, wherein, described plasma process step comprises dielectric etch.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/813,829 | 2004-03-30 | ||
| US10/813,829 US20050217795A1 (en) | 2004-03-30 | 2004-03-30 | Method of plasma etch endpoint detection using a V-I probe diagnostics |
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| Publication Number | Publication Date |
|---|---|
| CN1998069A true CN1998069A (en) | 2007-07-11 |
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| CNA2005800104724A Pending CN1998069A (en) | 2004-03-30 | 2005-03-30 | Method of plasma etch endpoint detection using a V-I probe diagnostics |
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| Country | Link |
|---|---|
| US (1) | US20050217795A1 (en) |
| JP (1) | JP2007531999A (en) |
| KR (1) | KR20070020226A (en) |
| CN (1) | CN1998069A (en) |
| TW (1) | TW200610051A (en) |
| WO (1) | WO2005098091A2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102209425A (en) * | 2011-01-08 | 2011-10-05 | 大连理工大学 | Diagnostic device of radio frequency discharge plasma |
| CN102474972A (en) * | 2009-07-20 | 2012-05-23 | 朗姆研究公司 | System and method for plasma arc detection, isolation and prevention |
| CN102084472B (en) * | 2008-07-07 | 2013-07-03 | 朗姆研究公司 | RF-biased capacitively-coupled electrostatic (RFB-CCE) probe arrangement for characterizing a film in a plasma processing chamber |
| CN103298235A (en) * | 2012-02-22 | 2013-09-11 | 朗姆研究公司 | State-based adjustment of power and frequency |
| CN107578980A (en) * | 2016-07-05 | 2018-01-12 | 布鲁克道尔顿有限公司 | Suppress the harmonic signal in Ion cyclotron Resonance Mass Spectrometry analysis |
| CN114063479A (en) * | 2021-11-12 | 2022-02-18 | 华科电子股份有限公司 | Radio frequency power supply control method and system applied to multi-output module of etching machine |
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| KR100937164B1 (en) * | 2007-12-20 | 2010-01-15 | 정진욱 | Process monitoring apparatus and the method of the same |
| CN102612864B (en) * | 2009-11-19 | 2015-06-10 | 朗姆研究公司 | Methods and apparatus for controlling a plasma processing system |
| US10269545B2 (en) * | 2016-08-03 | 2019-04-23 | Lam Research Corporation | Methods for monitoring plasma processing systems for advanced process and tool control |
| US10395896B2 (en) | 2017-03-03 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation |
| TW202123303A (en) | 2019-08-19 | 2021-06-16 | 美商應用材料股份有限公司 | Methods and apparatus for controlling rf parameters at multiple frequencies |
| WO2024019020A1 (en) * | 2022-07-21 | 2024-01-25 | 東京エレクトロン株式会社 | Plasma processing device and endpoint detection method |
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| US236465A (en) * | 1881-01-11 | Furnace for burning cane-trash | ||
| US1538538A (en) * | 1924-04-28 | 1925-05-19 | Wood Marie Elizabeth | Pad for children's chairs |
| US2254466A (en) * | 1938-04-15 | 1941-09-02 | Albert Lisa | High-chair pad |
| US2652183A (en) * | 1950-06-15 | 1953-09-15 | Hlivka Bernice | Baby holder for children's chairs |
| US3578380A (en) * | 1969-03-07 | 1971-05-11 | Rosalind R Jacobus | Sanitary cover for shopping cart seat |
| US4659143A (en) * | 1986-01-27 | 1987-04-21 | Maclennan Diane | Food catcher for attaching to table |
| US4848834A (en) * | 1989-01-24 | 1989-07-18 | Ron Linski | Infant food catch |
| US5121938A (en) * | 1991-03-04 | 1992-06-16 | Invacare Corporation | Slip covers for wheelchairs |
| US6129417A (en) * | 1991-08-19 | 2000-10-10 | Melissa Cohen-Fyffe | Shopping cart clean seat cover |
| US5458732A (en) * | 1992-04-14 | 1995-10-17 | Texas Instruments Incorporated | Method and system for identifying process conditions |
| US5238293A (en) * | 1992-09-08 | 1993-08-24 | Gibson Donna S | Shopping cart seat cover |
| US5547250A (en) * | 1994-10-21 | 1996-08-20 | Childers; Shirley A. | Cart caddy for shopping carts |
| US5576629A (en) * | 1994-10-24 | 1996-11-19 | Fourth State Technology, Inc. | Plasma monitoring and control method and system |
| US5678888A (en) * | 1996-10-15 | 1997-10-21 | Sowell; Christy-Anne M. | Shopping cart child seat cover |
| US6116162A (en) * | 1997-10-09 | 2000-09-12 | Santa Cruz; Cathy D. | Combination protective bumper and placemat |
| US6237998B1 (en) * | 1999-02-17 | 2001-05-29 | Sandra Stephens Aprile | Baby seat cover |
| US6428098B1 (en) * | 1999-11-16 | 2002-08-06 | Florence B. Allbaugh | Child seat liner |
| US20010048235A1 (en) * | 2000-01-21 | 2001-12-06 | Hartranft Amy M. | Seat cover For Shopping cart child seat |
| US6631950B1 (en) * | 2000-06-26 | 2003-10-14 | Balanced Health, Inc. | Protective cover for a high chair |
| JP3708031B2 (en) * | 2001-06-29 | 2005-10-19 | 株式会社日立製作所 | Plasma processing apparatus and processing method |
| US6517155B1 (en) * | 2001-08-20 | 2003-02-11 | Marc Landine | Disposable shopping cart seat liner |
| US6655734B2 (en) * | 2001-08-30 | 2003-12-02 | Herbistic Enterprises, Llc | Disposable sanitary seat cover |
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- 2005-03-30 KR KR1020067020681A patent/KR20070020226A/en not_active Application Discontinuation
- 2005-03-30 WO PCT/US2005/011214 patent/WO2005098091A2/en active Application Filing
- 2005-03-30 CN CNA2005800104724A patent/CN1998069A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102084472B (en) * | 2008-07-07 | 2013-07-03 | 朗姆研究公司 | RF-biased capacitively-coupled electrostatic (RFB-CCE) probe arrangement for characterizing a film in a plasma processing chamber |
| CN102474972A (en) * | 2009-07-20 | 2012-05-23 | 朗姆研究公司 | System and method for plasma arc detection, isolation and prevention |
| CN102209425A (en) * | 2011-01-08 | 2011-10-05 | 大连理工大学 | Diagnostic device of radio frequency discharge plasma |
| CN102209425B (en) * | 2011-01-08 | 2012-07-18 | 大连理工大学 | Radio frequency discharge plasma diagnostic device |
| CN103298235A (en) * | 2012-02-22 | 2013-09-11 | 朗姆研究公司 | State-based adjustment of power and frequency |
| CN103298235B (en) * | 2012-02-22 | 2017-04-12 | 朗姆研究公司 | State-based adjustment of power and frequency |
| CN107578980A (en) * | 2016-07-05 | 2018-01-12 | 布鲁克道尔顿有限公司 | Suppress the harmonic signal in Ion cyclotron Resonance Mass Spectrometry analysis |
| CN107578980B (en) * | 2016-07-05 | 2019-06-11 | 布鲁克道尔顿有限公司 | Inhibit the harmonic signal in Ion cyclotron Resonance Mass Spectrometry analysis |
| CN114063479A (en) * | 2021-11-12 | 2022-02-18 | 华科电子股份有限公司 | Radio frequency power supply control method and system applied to multi-output module of etching machine |
| CN114063479B (en) * | 2021-11-12 | 2024-01-23 | 华科电子股份有限公司 | Radio frequency power supply control method and system applied to multi-output module of etching machine |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200610051A (en) | 2006-03-16 |
| WO2005098091A2 (en) | 2005-10-20 |
| WO2005098091A3 (en) | 2007-03-15 |
| US20050217795A1 (en) | 2005-10-06 |
| WO2005098091B1 (en) | 2007-04-26 |
| JP2007531999A (en) | 2007-11-08 |
| KR20070020226A (en) | 2007-02-20 |
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