CN1996753B - Positive feedback high-side transistor driver for improving the speed and saving the power - Google Patents
Positive feedback high-side transistor driver for improving the speed and saving the power Download PDFInfo
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- CN1996753B CN1996753B CN200510048793A CN200510048793A CN1996753B CN 1996753 B CN1996753 B CN 1996753B CN 200510048793 A CN200510048793 A CN 200510048793A CN 200510048793 A CN200510048793 A CN 200510048793A CN 1996753 B CN1996753 B CN 1996753B
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Abstract
This invention provides one high side transistor tube driver, which comprises the following parts: one drive circuit to generate one drive signal for one transistor tube; one float supply end to supply driver circuit voltage; one floater earth end is connected to the transistor source electrode; one boot strap diode is coupled to float supply end and one voltage source; one capacitor is connectedto the diode coupled between float supply end and earth end.
Description
Technical field
The present invention relates to a high-side switch driver, and relate in particular to a drive circuit that is used to drive high-side transistor.
Background technology
Multiple power converter and motor driver utilize bridge circuit to control a power supply to a load.Described bridge circuit has the low side switch that a high-side switch and that is couple to power end is couple to the ground connection reference edge usually.Common contact between described high-side switch and the low side switch is couple to a load.High-side switch and low side switch are implemented with transistor usually.When the switch alternate conduction, so the level at contact place change between power supply and ground connection reference altogether.Therefore, when high-side transistor was connected, the level shift at contact place was to power supply altogether.In order to connect high-side transistor fully to realize that one gate drive voltage must be higher than supply voltage than Low ESR.Therefore, the gate pole of high-side transistor must float with respect to the ground connection reference edge to source voltage.Fig. 1 illustrates that one uses a bootstrap capacitor (bootstrap capacitor) 30 and one charge pump diode 40 to produce floating voltage V
CCConventional bridge circuit with the gate pole that drives high-side transistor 10.When connecting oxide-semiconductor control transistors 45, the gate pole of high-side transistor 10 just is connected to the ground connection reference edge via diode 42, thereby disconnects high-side transistor 10.In case disconnect high-side transistor 10 and connect low side transistors 20, then a bias voltage V
BJust via 30 chargings of 40 pairs of bootstrap capacitors of charge pump diode.Floating voltage V
CCThe gate pole that postpones to be input to high-side transistor 10 via transistor 41 to cut off oxide-semiconductor control transistors 45.Owing to cut off above-mentioned oxide-semiconductor control transistors 45, so high-side transistor 10 is connected.
One of shortcoming of above-mentioned bridge circuit is its high handoff loss in high-voltage applications.Oxide-semiconductor control transistors 45 meets a high pressure manufacturing process that is applicable to high-voltage applications (at 200 volts or higher volt).High voltage transistor has big capacitor parasitics usually, and it can increase the rise time and therefore delay switching signal.Thereby cause the high handoff loss of high-side transistor.Therefore, above-mentioned bridge circuit is not suitable for high pressure and high-speed applications.
The bridge circuit design of recent many exploitations comprises that generation one is suitable for the method for high-side transistor gate voltage.Some well-known conventional bridge circuit design comprises people's such as Zisa US5,381,044, the US 5,638,025 of Johnson and the US 5,672,992 of Nadd.Above-mentioned bridge circuit all has the same disadvantages of custom circuit as shown in fig. 1.That is the oxide-semiconductor control transistors of conventional bridge circuit design all has the problem of high handoff loss in high-voltage applications.
For overcoming some above-mentioned defective, the US 6,344,959 of Milazzo proposes the conventional bridge circuit of a use boost converter technique.Yet above-mentioned technology use one needs the voltage-multiplying circuit (voltage doubling circuit) of extra switch assembly and other circuit; Therefore, can increase the cost and the complexity of drive circuit.Among the US 6,781,422 of Yang and the US 6,836,173 of Yang other the conventional high-side transistor driver that is used for high-speed applications has been described.Yet higher power loss remains the important defective of one.
Summary of the invention
Target of the present invention is to overcome the defective of conventional bridge circuit and provide one to have the high efficiency high-side transistor driver that is applicable to high pressure and high-speed applications.
The invention provides a kind of high-side transistor driver, it is characterized in that comprising one drive circuit, one first end, one second end, one first diode, one first capacitor, a first transistor and one second capacitor with high speed high-side transistor driving force.Described drive circuit receives an input signal and produces a drive signal to drive a high-side transistor.Described first end provides a supply voltage to described drive circuit.Described second end is exported an output voltage and is couple to the one source pole of described high-side transistor.Described first diode is coupled between described first end and the voltage source.Described first capacitor is coupled between described first end and described second end, to be used to store the energy that is used for described drive circuit.Described the first transistor cuts off described high-side transistor in order to respond described input signal.Described second capacitor is couple to described drive circuit, quickens described drive signal to respond described input signal.Wherein said drive circuit comprises a regenerative circuit, with the power that is used to quicken described drive signal and is used to save described drive circuit.
The invention provides a kind of high-side switch driver that is used to drive a high-side switch, it is characterized in that comprising one drive circuit, one first end, one second end, one first diode, one first capacitor, one first switch and one second capacitor.Described drive circuit has a regenerative circuit and drives described high-side switch to respond an input signal.Described first end provides a supply voltage to described drive circuit.Described second end is exported an output voltage and is couple to the one source pole of described high-side switch.Described first diode is coupled between described first end and the voltage source.Described first capacitor is coupled between described first end and described second end.Described first switch is used to respond described input signal and cuts off described high-side switch.Described second capacitor is used to respond described input signal and quickens to drive described high-side switch.
High-side switch driver of the present invention comprises that a drive circuit with a regenerative circuit drives-high-side switch to respond an input signal.One first end and one second end are used to provide a supply voltage to described drive circuit.One first diode is coupled between described first end and the voltage source.One first capacitor is couple to first end and second end are powered at drive circuit with storage energy.One first switch is responded input signal and is cut off high-side switch.One second capacitor is responded input signal and is quickened to drive high-side switch.One first device is couple to and draws first switch more than the second switch.The second switch and first device form a regenerative circuit changes described first device to be used to respond input signal impedance.One the 3rd switch is connected to first switch.First switch is controlled the on/off of the 3rd switch.One second device is couple to described the 3rd switch.One the 3rd device is connected between second switch and the 3rd switch.One input of one output circuit is couple to the 3rd switch.One output of output circuit is in order to drive high-side switch.
A high-side switch driver proposed by the invention is used for driving high-side switch at high pressure and high-speed applications, and has improved the efficient of high-side switch driver.Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Fig. 1 is the circuit diagram of explanation one conventional high-side transistor driver.
Fig. 2 implements the circuit legend for one of explanation high-side transistor driver according to the present invention.
Fig. 3 is another enforcement circuit legend of explanation high-side transistor driver according to the present invention.
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, the feature and the effect thereof of the high-side transistor driver that foundation the present invention is proposed, describe in detail as after.
Fig. 2 illustrates the circuit according to the high-side transistor driver of one embodiment of the invention, comprise one drive circuit 100, and described drive circuit 100 is used to receive an input signal S
INAnd be used to produce a drive signal V
GTo drive a high-side transistor 10.One first end TA and one second end TB provide a supply voltage to described drive circuit 100.The described second end TB is connected to the source electrode of a high-side transistor 10.Diode 40 is coupled to the first end TA and a voltage source V
DBetween.Capacitor 30 is coupled to the energy that is used for drive circuit 100 between the first end TA and the second end TB with storage.In case input signal S
INInterrupt described voltage source V
DJust capacitor 30 is charged.Transistor 45 is responded input signal S
INBe used to cut off high-side transistor 10.Described input signal S
INBe fed to a gate pole of transistor 45 via an inverter 43.One output of described inverter 43 further is connected to a capacitor 60.Described capacitor 60 also is couple to drive circuit 100 to respond input signal S
INAnd acceleration drive signal V
GDescribed drive circuit 100 comprises that a regenerative circuit is to quicken drive signal V
GAnd the power of saving drive circuit 100.
Described drive circuit 100 comprises one first device 160, and described first device 160 is couple to a drain electrode of transistor 45 to be used to pull up transistor 45 from the first end TA.One transistor 70 is couple to described first device 160 to form one first regenerative circuit.One gate pole of described transistor 70 is couple to capacitor 60 to respond input signal S
INAnd reduce by 160 the impedance of first device.As input signal S
INWhen enabling, can disconnect transistor 45 via inverter 43 and connect transistor 70 via inverter 43 and capacitor 60.When connecting transistor 70, can reduce the impedance of first device 160 and 45 the drain electrode of pulling up transistor immediately.One gate pole of one transistor 80 is couple to the drain electrode of transistor 45.The source electrode of transistor 80 is connected to the second end TB.Diode 42 is connected in parallel between the gate pole and source electrode of transistor 80.In case interrupt input signal S
IN, just connect transistor 45.Therefore, voltage source V
DCome capacitor 30 is charged via diode 40,42 and transistor 45.One second device 180 is couple to a drain electrode of the first end TA and transistor 80 in order to pull up transistor 80 drain electrode.One the 3rd device 150 is coupled between the drain electrode of the gate pole of transistor 70 and transistor 80.One output circuit comprises a buffer 110 and an inverter 120.One input of described output circuit is couple to the drain electrode of transistor 80.One output of output circuit produces the drive signal V that is used to drive high-side transistor 10
GOne transistor 90 is couple to second device 180 to form one second regenerative circuit.Transistor 90 with a gate pole is couple to output circuit to respond drive signal V
GAnd reduce by 180 the impedance of second device.When pulldown transistors 80 to enable drive signal V
GThe time, can disconnect transistor 90 with impedance that increases by second device 180 and the power of saving drive circuit 100.
Referring to Fig. 2, Fig. 3 explanation high-side transistor driver according to another embodiment of the present invention.In described embodiment, first device 160 is that resistor 171 and 172, the second devices 180 are that resistor 191 and 192, the three devices 150 are a resistor 155.Transistor 70 and 90 is respectively in order to short-circuit resistance device 171 and 191, and the change impedance.In another embodiment of the present invention, the high-side transistor driver of Fig. 3 is the shortcoming that overcomes conventional high-side transistor driver, and is applicable to high pressure and high-speed applications.In addition, compared to conventional high-side transistor driver, the high-side transistor driver of another embodiment of the present invention operates more efficient.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the structure that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, but every content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (8)
1. high-side transistor driver with high speed high-side transistor driving force is characterized in that comprising:
One drive circuit receives an input signal and produces a drive signal driving a high-side transistor,
One first end and one second end are in order to provide a supply voltage to described drive circuit respectively; Wherein this second end is couple to the transistorized one source pole in described high-pressure side;
One first diode is coupled between described first end and the voltage source;
One first capacitor is coupled between described first end and described second end, to be used to store the energy of described drive circuit;
One the first transistor is in order to cut off described high-pressure side transistor according to described input signal; And
One second capacitor is couple to described drive circuit and quickens described drive signal according to described input signal;
Wherein said drive circuit comprises one first regenerative circuit, and with the power that is used to quicken described drive signal and is used to save described drive circuit, and described first regenerative circuit comprises:
One first device is coupled between the drain electrode of described first end and described the first transistor, and described first device comprises two resistors;
One transistor seconds is couple to described first device to form described first regenerative circuit, and a gate pole of wherein said transistor seconds is couple to described second capacitor, reduces the impedance of described first device to respond described input signal.
2. according to the described high-side transistor driver of claim 1, it is characterized in that in case interrupt described input signal, described voltage source just charges to described first capacitor with high speed high-side transistor driving force.
3. according to the described high-side transistor driver of claim 1, it is characterized in that described drive circuit comprises with high speed high-side transistor driving force:
One the 3rd transistor, the wherein said the 3rd a transistorized gate pole is couple to the described drain electrode of described the first transistor, and the described the 3rd transistorized one source pole is connected to described second end;
One second device is coupled between described first end and the described the 3rd transistorized drain electrode, and described second device comprises two other resistors;
One the 3rd device is coupled between the described gate pole and the described the 3rd transistorized described drain electrode of described transistor seconds, and described the 3rd device comprises an other resistor;
One output circuit has an input and is couple to the described the 3rd transistorized described drain electrode, and an output of wherein said output circuit produces described drive signal to drive described high-side transistor;
One the 4th transistor is couple to described second device to form one second regenerative circuit, and the wherein said the 4th a transistorized gate pole is couple to described output circuit, reduces the impedance of described second device to respond described drive signal; With
One second diode, coupled in parallel is between the described the 3rd transistorized described gate pole and described source electrode.
4. high-side switch driver that is used to drive a high-side switch is characterized in that comprising:
One drive circuit has one first regenerative circuit and drives described high-side switch to respond an input signal;
One first end and one second end are in order to provide a supply voltage to described drive circuit respectively; Wherein this second end is couple to the transistorized one source pole in described high-pressure side;
One first diode is coupled between described first end and the voltage source;
One first capacitor is coupled between described first end and described second end;
One first switch is used to respond described input signal and cuts off described high-side switch; With
One second capacitor is used to respond described input signal and quickens to drive described high-side switch;
Wherein said first regenerative circuit comprises:
One first device is couple to described first switch, and wherein said first device comprises two resistors; And
One second switch forms one first regenerative circuit, be used to respond described input signal and change described first the device described impedance.
5. according to the described high-side switch driver that is used to drive a high-side switch of claim 4, it is characterized in that in case interrupt described input signal, described voltage source just charges to described first capacitor.
6. according to the described high-side switch driver that is used to drive high-side switch of claim 4, it is characterized in that described drive circuit comprises:
One the 3rd switch is couple to described first switch, described the 3rd switch of wherein said first switch connection/disconnection;
One second device is couple to described the 3rd switch, and described second device comprises two other resistors;
One the 3rd device is coupled between described second switch and described the 3rd switch, and described the 3rd device comprises an other resistor; With
One output circuit has an input and is couple to described the 3rd switch, and an output of wherein said output circuit is in order to drive described high-side switch.
7. according to the described high-side switch driver that is used to drive high-side switch of claim 6, it is characterized in that described drive circuit further comprises:
One the 4th switch, be couple to described second the device to form one second regenerative circuit, be used to respond the described output of described output circuit and change described second the device impedance.
8. according to the described high-side switch driver that is used to drive high-side switch of claim 6, it is characterized in that described drive circuit further comprises one second diode that is couple to described the 3rd switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510048793A CN1996753B (en) | 2005-12-29 | 2005-12-29 | Positive feedback high-side transistor driver for improving the speed and saving the power |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510048793A CN1996753B (en) | 2005-12-29 | 2005-12-29 | Positive feedback high-side transistor driver for improving the speed and saving the power |
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| CN1996753A CN1996753A (en) | 2007-07-11 |
| CN1996753B true CN1996753B (en) | 2010-05-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103683864A (en) * | 2012-08-30 | 2014-03-26 | 英飞凌科技股份有限公司 | Circuit arrangement for driving transistors in bridge circuits |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8531210B2 (en) * | 2011-08-30 | 2013-09-10 | System General Corporation | Monolithic high-side switch control circuits |
| CN107077618B (en) * | 2017-01-24 | 2019-03-08 | 深圳市汇顶科技股份有限公司 | Fingerprint identification system |
| CN110662323B (en) * | 2018-06-28 | 2022-04-12 | 朗德万斯公司 | Driver, method for controlling driver, and lighting module |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6781422B1 (en) * | 2003-09-17 | 2004-08-24 | System General Corp. | Capacitive high-side switch driver for a power converter |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6781422B1 (en) * | 2003-09-17 | 2004-08-24 | System General Corp. | Capacitive high-side switch driver for a power converter |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103683864A (en) * | 2012-08-30 | 2014-03-26 | 英飞凌科技股份有限公司 | Circuit arrangement for driving transistors in bridge circuits |
| CN103683864B (en) * | 2012-08-30 | 2016-06-22 | 英飞凌科技股份有限公司 | For driving the circuit arrangement of the transistor in bridge circuit |
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| CN1996753A (en) | 2007-07-11 |
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