CN1992104B - Ring-shaped magnetic multi-layer film and method for making same and use - Google Patents
Ring-shaped magnetic multi-layer film and method for making same and use Download PDFInfo
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Abstract
This invention relates to a circular magnetic multi-layer membrane, which characterized with: the cross section of the said magnetic multi-layer membrane takes on the closed circle shape, the circle's inner diameter being 10~100000nm, outer diameter being 20~200000nm. In accordance with the classification of the forming materials, the magnetic multi-layer membrane of the invention includes the circular magnetic multi-layer membrane without pinning and the circular magnetic multi-layer membrane with pinning, and it can be prepared through micro-processing method or insulator micron, submicron or nano-particles masking method. The circular magnetic multi-layer membrane of the invention has no fading magnetic field, weak shape anisotropy, and it can be widely used in various devices with the core of magnetic multi-layer membrane, such as magnetic random access memory, computer magnetic heads, magnetic-sensing sensors, etc.
Description
Technical field
The present invention relates to a kind of ring-shaped magnetic multi-layer film, and preparation method thereof and its application in device.
Background technology
From people such as phase late 1980s Baibich in the magnetoresistance effect system first observed to giant magnetoresistance effect (Giant Magneto Resistance, GMR) since, the research of magnetoresistance effect system is a problem of scientific research personnel's common concern always.Because the GMR effect has very high magneto-resistor ratio, therefore can be widely applied to fields such as magnetoelectricity resistance type transducer, magnetic recording magnetic reading head.That the device made from GMR not only has is highly sensitive, volume is little, good characteristics such as low in energy consumption, can also bring many new features such as radioresistance, non-volatile information storage.Particularly the GMR effect is used for the magnetic recording magnetic reading head and has brought a deepgoing revolution then for whole information record field, and related industry has been produced directly and far-reaching influence.IBM Corporation utilized the GMR effect successfully to develop the hard disc magnetic reading head in 1994, and the packing density of disk storage system has been improved nearly 20 times, made computer industry obtain breakthrough; The various kinds of sensors part of making based on the GMR effect then makes designs greatly simplify owing to output signal strengthens, and this has directly caused miniaturization of devices and cheap.
After the GMR effect is found, nineteen ninety-five Japan scientist T.Miyazaki and U.S. scientist J.S.Moodera have independently obtained under the room temperature 18% and 10% tunnel magneto resistance (TunnelingMagneto Resistance respectively in MTJ (MTJ), TMR) ratio, thus started the research climax of MTJ.The researcher is based on GMR effect and MTJ and designed a kind of novel magnetic random access memory (Magnetic RandomAccess Memory, MRAM) device model, this device is owing to having adopted brand-new design to have many breathtaking new features, such as radioresistance, non-volatile information storage etc.Typical MRAM core structure is made of four parts: bit line (Bit Line), write word line (Word Line), readout word line (Read Line) and memory cell.Bit line and write word line, readout word line lay respectively at the above and below of memory cell, are cross arrangement in length and breadth, and memory cell then is positioned at the infall of bit line and word line.MRAM read-write process is then finished by word line and bit line current acting in conjunction, the magnetized state of memory cell is controlled in the magnetic field that this working method significantly depends on word line and bit line current and produced, structure and technology are very complicated, give the processing of device and have integratedly brought great inconvenience.
1996, U.S. scientist J.Slonczewski has foretold a kind of new physical mechanism-spin-torque (Spin Torque theoretically, ST) effect, this physical mechanism can utilize electric current self to realize that the electric current that flows through is less than certain specific critical value I to the controlling of memory cell magnetized state in memory cell
CThe time, the memory cell magnetized state can not be stored the electric current that flows through in the unit and change, thereby can realize read operation; And the electric current that flows through in memory cell is greater than this critical value I
CThe time, the memory cell magnetized state will be determined by the sense of current that flows through in the memory cell, thereby can be realized write operation.In the more than ten years subsequently, scientists has been carried out a large amount of extensive and deep researchs to this new effect.If this new mechanism is applied in the devices such as magnetoresistance effect system and MRAM, then can greatly simplify device architecture and processing technology, this will bring revolutionary breakthrough again for area information storage.Yet because the geometry of the memory cell of using in the prior art (as bit-level and other pinning layer) all adopts non-closing structure, as rectangle, ellipse etc., this structure will be brought bigger demagnetizing field and shape anisotropy under high density small size memory cell, this defective can increase the adverse field and the power consumption of free layer undoubtedly, uniformity and consistency to the magnetic electricity performance of memory cell are also brought many adverse influences, and bring many structural complexity for the design and the preparation of memory cell, as adopting compound bit-level of sandwich and bottom pinning layer the demagnetizing field for reducing.In order to overcome these problems, must adopt new geometry and designs to eliminate the demagnetizing field of magnetoresistance effect self and reduce shape anisotropy.
Summary of the invention
The objective of the invention is to overcome the structural defective of existing magnetoresistance effect system physical,, provide a kind of ring-shaped magnetic multi-layer film that does not have demagnetizing field and weak shape anisotropy by changing the geometry of multilayer film system, and preparation method thereof, and purposes.
The objective of the invention is to realize by the following technical solutions:
Ring-shaped magnetic multi-layer film provided by the invention comprises each layer of conventional magnetoresistance effect, and it is characterized in that: the cross section of described magnetoresistance effect is the closed round ring shape, and the internal diameter of this annulus is 10～100000nm, and external diameter is 20～200000nm.
Ring-shaped magnetic multi-layer film provided by the invention, the materials classification according to forming comprises no pinning type ring-shaped magnetic multi-layer film and pinning type ring-shaped magnetic multi-layer film.
No pinning type ring-shaped magnetic multi-layer film provided by the invention, it comprise a substrate and on bottom buffering conductive layer, the hard magnetic layer (hereinafter to be referred as HFM), intermediate layer (hereinafter to be referred as I1), soft magnetosphere (hereinafter to be referred as SFM) and the cover layer that on the buffering conductive layer of described bottom, deposit successively, it is characterized in that: the cross section of described magnetoresistance effect is the closed round ring shape, the internal diameter of this annulus is 10～100000nm, and external diameter is 20～200000nm.
Described substrate is conventional substrate, as Si, Si/SiO
2, SiC, SiN or GaAs substrate etc., thickness is 0.3～1mm;
Described bottom buffering conductive layer is made up of metal material, preferred Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu or Al, and thickness is 2～200nm;
Described hard magnetic layer HFM is by the big material of giant magnetoresistance effect, as Co, and Fe, Ni, CoFe, NiFeCo, CoFeB, compositions such as CoFeSiB, thickness are 2～20nm;
Described intermediate layer I1 is made of metal level or insulator barrier layer, the wherein material of metal level such as Ti, Zn, ZnMn, Cr, Ru, Cu, V or TiC, the material of insulator barrier layer such as Al
2O
3, MgO, TiO, ZnO, (ZnMn) O, CrO, VO, or TiCO, the thickness in intermediate layer are 0.5～10nm;
The composition material of described soft magnetosphere SFM is the spin polarizability height, and the ferromagnetic material that coercive force is less comprises: Co, Fe, Ni or their metal alloy NiFe, CoFeSiB, NiFeSiB, or amorphous Co
100-x-yFe
xB
y(0＜x＜100,0＜y≤20), or Heusler alloy are as Co
2MnSi, Co
2Cr
0.6Fe
0.4Al; The preferred Co of the composition material of soft magnetosphere
90Fe
10, Co
75Fe
25, Co
40Fe
40B
20, or Ni
79Fe
21The thickness of described soft magnetosphere is 1～20nm;
Described cover layer is formed by being difficult for metal material oxidized and that have big resistance, preferably Ta, Cu, Ru, Pt, Ag, Au, Cr etc., and thickness is 2～10nm, it is not oxidized to be used for protective material.
Pinning type ring-shaped magnetic multi-layer film provided by the invention, it comprise a substrate and on bottom buffering conductive layer, the antiferromagnetic pinning layer (hereinafter to be referred as AFM), pinned magnetosphere (hereinafter to be referred as FM1), intermediate layer (hereinafter to be referred as I2), free soft magnetosphere (hereinafter to be referred as FM2) and the cover layer that on the buffering conductive layer of described bottom, deposit successively, it is characterized in that: the cross section of described magnetoresistance effect is the closed round ring shape, the internal diameter of this annulus is 10～100000nm, and external diameter is 20～200000nm.
Described substrate is conventional substrate, as Si, Si/SiO
2, SiC, SiN or GaAs substrate etc., thickness is 0.3～1mm;
Described bottom buffering conductive layer is made up of metal material, preferred Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu or Al, and thickness is 2～200nm;
Described antiferromagnetic pinning layer AFM is by having anti-ferromagnetic alloy composition, preferred IrMn, and FeMn, PtMn, or CrMn, thickness are 3～30nm;
The composition material of described pinned magnetosphere FM1 is the ferromagnetic metal that has than high spinning polarizability, as Fe, Co, Ni and alloy thereof, and preferred CoFe alloy, the NiFe alloy, amorphous CoFeB alloy, CoFeSiB etc., thickness are 2～20nm;
Described intermediate layer I2 is made of metal level or insulator barrier layer, the wherein material of metal level such as Ti, Zn, ZnMn, Cr, Ru, Cu, V or TiC, the material of insulator barrier layer such as Al
2O
3, MgO, TiO, ZnO, (ZnMn) O, CrO, VO, or TiCO, the thickness in intermediate layer are 0.5～10nm;
The composition material of described free soft magnetosphere FM2 is the spin polarizability height, and the ferromagnetic material that coercive force is less comprises: Co, Fe, Ni or their metal alloy, or amorphous Co
100-x-yFe
xB
y(0＜x＜100,0＜y≤20), or NiFeSiB, or Heusler alloy are as Co
2MnSi, Co
2Cr
0.6Fe
0.4Al; The preferred Co of soft magnetosphere material
90Fe
10, Co
75Fe
25, Co
40Fe
40B
20, or Ni
79Fe
21The thickness of described soft magnetosphere is 1～20nm;
Described cover layer is formed by being difficult for metal material oxidized and that have big resistance, preferably Ta, Cu, Ru, Pt, Ag, Au, Cr etc., and thickness is 2～10nm, it is not oxidized to be used for protective material.
Ring-shaped magnetic multi-layer film provided by the invention can prepare by micro-processing method or insulator micron, sub-micron or two kinds of methods of nano particle mask.
The invention provides a kind of method of utilizing micro-processing method to prepare described ring-shaped magnetic multi-layer film, comprise following step:
1) selects a substrate, after the process conventional method is cleaned, cushion conductive layer (this bottom becomes conductive electrode when cushioning conductive layer in following process) in deposition bottom on the described substrate with conventional film growth apparatus (for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy etc.);
2) utilize conventional film growth means, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy etc. cushion hard magnetic layer HFM, intermediate layer I1, soft magnetosphere SFM and the cover layer that deposits no pinning type ring-shaped magnetic multi-layer film of the present invention on the conductive layer successively in the bottom; When deposition hard magnetic layer and soft magnetosphere, can select to apply the plane induced magnetic field of 50～5000Oe;
Or utilize conventional film growth means, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy etc. cushion antiferromagnetic pinning layer AFM, pinned magnetosphere FM1, intermediate layer I2, free soft magnetosphere FM2 and the cover layer that deposits pinning type ring-shaped magnetic multi-layer film of the present invention on the conductive layer successively in the bottom; When depositing antiferromagnetic pinning layer, pinned magnetosphere and free soft magnetosphere, can select to apply the plane induced magnetic field of 50～5000Oe;
3) adopt micro fabrication and ion etching process with step 2) in deposited magnetoresistance effect substrate be processed into the magnetoresistance effect of circulus;
The concrete steps of described micro fabrication are: at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure or electron beam exposure apparatus, according to required ring-type figure the sheet base is exposed, then development, photographic fixing, back baking, with ion etching process magnetoresistance effect is carved into annular then, soaks with glue-dispenser at last and remove photoresist;
Can also utilize reactive ion etching machine to assist in case of necessity removes photoresist;
4) on the ring-shaped magnetic multi-layer film that step 3) obtains, utilize conventional film growth means, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy etc. deposit that a layer insulating is buried each ring-type multilayer film and isolate mutually;
Described insulating barrier is conventional insulating material, preferred SiO
2, Al
2O
3, ZnO, TiO, SnO or organic molecule material (as polyvinylchloride, polythene PE, polypropylene PP etc.), thickness is 100～1000nm;
5) utilize the ultraviolet of micro fabrication, deep ultraviolet to expose or electron beam exposure method, and focused-ion-beam lithography or chemical reaction are done and are carved or chemical reaction is wet carves, the magnetoresistance effect of burying under the insulating barrier is exposed on the position that deposits the ring-type multilayer film insulating barrier being carried out etching, obtain ring-shaped magnetic multi-layer film of the present invention;
The invention provides a kind of method of utilizing insulator micron, sub-micron or nano particle mask method to prepare described ring-shaped magnetic multi-layer film, comprise following step:
1) selects a substrate, after the process conventional method is cleaned, cushion conductive layer (this bottom becomes conductive electrode when cushioning conductive layer in following process) in deposition bottom on the described substrate with conventional film growth apparatus (for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy etc.);
2) the regular or insulator stratum granulosum that disperses one deck to form randomly discretely on the buffering conductive layer of the bottom that in step 1), obtains by insulator micron particles, insulator submicron particles or insulator nano particle; Utilize the size and dimension of selected insulator micron particles, insulator submicron particles or insulator nano particle, control the size and dimension of the ring-shaped magnetic multi-layer film unit of final acquisition;
Described insulator micron particles, insulator submicron particles or insulator nano particle are conventional insulator micron particles, insulator submicron particles or insulator nano particle, preferred SiO
2, Al
2O
3, ZnO, TiO, SnO or organic molecule (as polyvinylchloride, polythene PE, polypropylene PP etc.) micron particles, submicron particles or nano particle, diameter is 10～100000nm;
3) utilize conventional film growth means, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy etc. cushion hard magnetic layer HFM, intermediate layer I1, soft magnetosphere SFM and the cover layer that deposits no pinning type ring-shaped magnetic multi-layer film of the present invention on the conductive layer successively in the bottom; When deposition hard magnetic layer and soft magnetosphere, can select to apply the plane induced magnetic field of 50～5000Oe;
Or utilize conventional film growth means, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy etc. cushion antiferromagnetic pinning layer AFM, pinned magnetosphere FM1, intermediate layer I2, free soft magnetosphere FM2 and the cover layer that deposits pinning type ring-shaped magnetic multi-layer film of the present invention on the conductive layer successively in the bottom; When depositing antiferromagnetic pinning layer, pinned magnetosphere and free soft magnetosphere, can select to apply the plane induced magnetic field of 50～5000Oe;
4) the sheet base that has deposited magnetoresistance effect is carried out ion etching, because insulator micron, sub-micron or nano particle have played the effect of mask, the magnetoresistance effect that is deposited on the particle below is retained, and the magnetoresistance effect that is exposed to no particle place was gone by quarter, was retained the magnetoresistance effect that is deposited on insulator micron, sub-micron or nano particle below that gets off at last and had formed circulus;
5) utilize micro fabrication, carry out dried quarter of selection chemical reaction or chemical reaction and wet quarter on the position that deposits the ring-type multilayer film, residual insulator micron, sub-micron or nano particle are carved gone, ring-shaped magnetic multi-layer film is exposed; Then on the ring-shaped magnetic multi-layer film that etching is shaped, utilize conventional film growth means, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy etc. deposit that a layer insulating is buried each ring-type multilayer film and isolate mutually; Utilize ultraviolet, deep ultraviolet exposure or the electron beam exposure method of micro fabrication at last, and focused-ion-beam lithography or chemical reaction are done and are carved or chemical reaction is wet carves, on the position that deposits the ring-type multilayer film, insulating barrier is carried out etching, the magnetoresistance effect of burying under the insulating barrier is exposed, obtain ring-shaped magnetic multi-layer film of the present invention;
Described insulating barrier is conventional insulating material, preferred SiO
2, Al
2O
3, ZnO, TiO, SnO or organic molecule (as polyvinylchloride, polythene PE, polypropylene PP etc.) material, thickness is 100～1000nm.
The application of above-mentioned ring-shaped magnetic multi-layer film in the components and parts that with the ring-shaped magnetic multi-layer film are core is:
Utilize conventional film growth means, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy etc. deposit one deck conductive layer on described ring-shaped magnetic multi-layer film;
Described conductive layer is the less metal of resistivity, preferred Au, Ag, Pt, Cu, Al, SiAl etc. or its metal alloy, and thickness is 2～200nm;
Utilize conventional semiconductor microactuator processing technology again, conductive layer is processed into electrode, each circulus is drawn four electrodes, promptly obtains containing the components and parts of ring-shaped magnetic multi-layer film of the present invention;
Described conventional semiconductor microactuator processing technology comprises: at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure machine or electron beam exposure apparatus, utilization has the reticle of pattern to be processed and exposes, then development, photographic fixing, back baking, with ion etching process the conductive layer on the magnetoresistance effect is carved into the shape of four electrodes then, removes photoresist with immersions such as glue-dispensers at last.
It is the various devices of core that ring-shaped magnetic multi-layer film of the present invention can be widely used in the magnetoresistance effect, for example, and magnetic RAM, computer magnetic head, magneto-dependent sensor etc.
Ring-shaped magnetic multi-layer film provided by the invention, the circulus of using micro-processing method or insulator micron, sub-micron or nano particle mask method to prepare replaces conventional magnetoresistance effect.When prior art is used conventional non-annularity structure, because the demagnetizing field that conventional structure brings and the influence of shape anisotropy, the magnetized state that makes magnetoresistance effect is malleable not, on device application, must rely on the outside big magnetic field that applies or control its magnetized state by the resultant magnetic field that big pulse current produces, power consumption is big, cost is high, and bring many unfavorable factors for the processing of device, integrated and use, as the magnetic coupling between noise and neighbour unit and magnetic disturbance and thermal effect and heat dissipation problem etc., and the performance of device exerted an adverse impact.And the present invention is by changing the geometry of magnetoresistance effect, can overcome above-mentioned defective, improve the performance of magnetoresistance effect, make it under the situation that keeps original feature of magnetoresistance effect and performance, also have no demagnetizing field and minimum magnetic anisotropy, magnetized state is easy to change and can advantage such as directly controls by electric current, avoided using external magnetic field or controlled structure and the technologic complexity that magnetized state brings by the resultant magnetic field that big pulse current produces, can satisfy the requirement of mass productization, ring-shaped magnetic multi-layer film promptly of the present invention is more suitable for the magnetic RAM in device, the preparation of novel magnetic multilayer film transducer.
Description of drawings
Fig. 1 is the structural representation (cover layer at substrate of bottom portion, bottom buffering conductive layer and top does not provide in the drawings) of no pinning type ring-shaped magnetic multi-layer film of the present invention; Fig. 1-1 is a top view, and Fig. 1-2 is a sectional structure chart;
Fig. 2 is the structural representation (cover layer at substrate of bottom portion, bottom buffering conductive layer and top does not provide in the drawings) of pinning type ring-shaped magnetic multi-layer film of the present invention; Fig. 2-1 is a top view, and Fig. 2-2 is a sectional structure chart; Wherein, 1 hard magnetic layer HFM, 2 intermediate layer I1,3 soft magnetosphere SFM, 4 antiferromagnetic pinning layer AFM, 5 pinned magnetosphere FM1,6 intermediate layer I2,7 free soft magnetosphere FM2, remainder is dielectric institute landfill.
Embodiment
Utilize the high vacuum magnetron sputtering apparatus at the thick SiO of 1mm that cleans through conventional method
2On/Si the substrate successively deposit thickness be the bottom buffering conductive layer Au of 2nm, thickness is hard magnetic layer (HFM) Co of 3nm, thickness is intermediate layer (I1) Cu of 1nm, thickness is soft magnetosphere (SFM) Co of 1nm and the cover layer Ru that thickness is 4nm.The growth conditions of above-mentioned magnetoresistance effect: be equipped with end vacuum: 5 * 10
-7Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate; When deposition hard magnetic layer and soft magnetosphere, apply 50Oe plane induced magnetic field.The magnetoresistance effect that deposition is good adopts micro-processing technology of the prior art, promptly at first pass through gluing, preceding baking, on electron beam exposure apparatus, the sheet base is exposed then development, photographic fixing, back baking again according to required ring-type figure, with ion etching process magnetoresistance effect is carved into annular then, soak with glue-dispenser at last and remove photoresist, promptly form circular geometry, the internal diameter of ring is 500nm, external diameter is 800nm, and width is 300nm.On the ring-shaped magnetic multi-layer film that erosion is shaped at the moment, utilize conventional film growth means then, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy etc. deposit the thick SiO of one deck 100nm
2Insulating barrier, each ring-type multilayer film is buried and isolation mutually, adopt micro-processing technology of the prior art to carry out etching, promptly at first on focused ion beam equipment, navigate to the position that deposits the ring-type multilayer film, then utilize the focused-ion-beam lithography method SiO
2Insulating barrier carries out etching, makes the ring-shaped magnetic multi-layer film of burying under the insulating barrier expose.Utilize the high vacuum magnetron sputtering apparatus to deposit the conductive layer Au of a layer thickness at last for 2nm, growth conditions as previously mentioned, process electrode with conventional semiconductor microactuator processing technology, promptly at first pass through gluing, preceding baking, again in ultraviolet, on the deep ultraviolet exposure machine, utilization has the reticle of pattern to be processed and exposes, then develop, photographic fixing, the back baking, with ion etching process the conductive layer on the magnetoresistance effect is carved into the shape of four electrodes then, soak with glue-dispenser at last and remove photoresist, promptly obtain no pinning type ring-shaped magnetic multi-layer film of the present invention, its structural representation as shown in Figure 1.
Utilize the high vacuum magnetron sputtering apparatus at the thick Si/SiO of 0.3mm that cleans through conventional method
2On the substrate successively deposit thickness be the bottom buffering conductive layer Au of 2nm, disperseing one deck diameter on the buffering conductive layer of bottom is the SiO of 100nm
2Particle, utilize again afterwards the high vacuum magnetron sputtering apparatus successively growth thickness be hard magnetic layer (HFM) Co of 20nm
75Fe
25, thickness is intermediate layer (I1) Cr of 10nm, thickness is soft magnetosphere (SFM) Co of 10nm
75Fe
25With thickness be the cover layer Ta of 10nm.The growth conditions of above-mentioned magnetoresistance effect: be equipped with end vacuum: 5 * 10
-7Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate; When deposition antiferromagnetic pinning layer, pinned magnetosphere and free soft magnetosphere, apply the plane induced magnetic field of 200Oe.The sheet base that has deposited magnetoresistance effect is carried out ion etching, because insulator micron, sub-micron or nano particle have played the effect of mask, the magnetoresistance effect that is deposited on the particle below is retained, and the magnetoresistance effect that is exposed to no particle place was gone by quarter, be retained the magnetoresistance effect that is deposited on insulator micron, sub-micron or nano particle below that gets off at last and formed circulus, the internal diameter of ring is 50nm, and external diameter is 100nm, and width is 50nm.Adopt micro-processing technology of the prior art then, promptly at first on focused ion beam equipment, navigate to the position that deposits the ring-type multilayer film, then utilize the focused-ion-beam lithography method SiO
2Insulating barrier carries out etching, makes the ring-shaped magnetic multi-layer film of burying under insulator micron, sub-micron or the nano particle expose.Utilize the high vacuum magnetron sputtering apparatus to deposit the conductive layer Cu of a layer thickness at last for 10nm, growth conditions as previously mentioned, process electrode with conventional semiconductor microactuator processing technology, promptly at first pass through gluing, preceding baking, again in ultraviolet, on the deep ultraviolet exposure machine, utilization has the reticle of pattern to be processed and exposes, then develop, photographic fixing, the back baking, with ion etching process the conductive layer on the magnetoresistance effect is carved into the shape of four electrodes then, soak with glue-dispenser at last and remove photoresist, promptly obtain no pinning type ring-shaped magnetic multi-layer film of the present invention, its structural representation as shown in Figure 1.
Utilize the high vacuum magnetron sputtering apparatus at the thick Si/SiO of 0.8mm that cleans through conventional method
2On the substrate successively deposit thickness be the bottom buffering conductive layer Au of 2nm, thickness is antiferromagnetic pinning layer (AFM) IrMn of 10nm, thickness is pinned magnetosphere (FM1) Co of 3nm
90Fe
10Deposit the Al of 1nm then, the insulating barrier that forms through plasma oxidation 50 seconds is as intermediate layer (I2); Deposit thickness is free soft magnetosphere (FM2) Co of 3nm successively on this intermediate layer
90Fe
10With thickness be the cover layer Au of 2nm.The growth conditions of above-mentioned magnetoresistance effect: be equipped with end vacuum: 5 * 10
-7Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate; When deposition hard magnetic layer and soft magnetosphere, apply the plane induced magnetic field of 150Oe.The magnetoresistance effect that deposition is good adopts micro-processing technology of the prior art, promptly at first pass through gluing, preceding baking, on electron beam exposure apparatus, the sheet base is exposed then development, photographic fixing, back baking again according to required ring-type figure, with ion etching process magnetoresistance effect is carved into annular then, soak with glue-dispenser at last and remove photoresist, promptly form circular geometry, the internal diameter of ring is 300nm, external diameter is 600nm, and width is 300nm.On the ring-shaped magnetic multi-layer film that erosion is shaped at the moment, utilize conventional film growth means then, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy etc. deposit the thick SiO of one deck 50nm
2Insulating barrier, each ring-type multilayer film is buried and isolation mutually, adopt micro-processing technology of the prior art to carry out etching, promptly at first on focused ion beam equipment, navigate to the position that deposits the ring-type multilayer film, then utilize the focused-ion-beam lithography method SiO
2Insulating barrier carries out etching, makes the ring-shaped magnetic multi-layer film of burying under the insulating barrier expose.Utilize the high vacuum magnetron sputtering apparatus to deposit the conductive layer Cu of a layer thickness at last for 5nm, growth conditions as previously mentioned, process electrode with conventional semiconductor microactuator processing technology, promptly at first pass through gluing, preceding baking, again in ultraviolet, on the deep ultraviolet exposure machine, utilization has the reticle of pattern to be processed and exposes, then develop, photographic fixing, the back baking, with ion etching process the conductive layer on the magnetoresistance effect is carved into the shape of four electrodes then, soak with glue-dispenser at last and remove photoresist, promptly obtain pinning type ring-shaped magnetic multi-layer film of the present invention, its structural representation as shown in Figure 2.
Utilize the high vacuum magnetron sputtering apparatus at the thick Si/SiO of 0.4mm that cleans through conventional method
2On the substrate successively deposit thickness be the bottom buffering conductive layer Au of 2nm, disperseing one deck diameter on the buffering conductive layer of bottom is the SiO of 5000nm
2Particle, utilize again afterwards the high vacuum magnetron sputtering apparatus successively growth thickness be antiferromagnetic pinning layer (AFM) PtMn of 10nm, thickness is pinned magnetosphere (FM1) Ni of 5nm
90Fe
10The MgO that deposits 10nm then is as intermediate layer (I2); Deposit thickness is free soft magnetosphere (FM2) Ni of 5nm successively on this intermediate layer
79Fe
21With thickness be the cover layer Au of 2nm.The growth conditions of above-mentioned magnetoresistance effect: be equipped with end vacuum: 5 * 10
-7Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate; When deposition antiferromagnetic pinning layer, pinned magnetosphere and free soft magnetosphere, apply the plane induced magnetic field of 100Oe.The sheet base that has deposited magnetoresistance effect is carried out ion etching, because insulator micron, sub-micron or nano particle have played the effect of mask, the magnetoresistance effect that is deposited on the particle below is retained, and the magnetoresistance effect that is exposed to no particle place was gone by quarter, be retained the magnetoresistance effect that is deposited on insulator micron, sub-micron or nano particle below that gets off at last and formed circulus, the internal diameter of ring is 800nm, and external diameter is 5000nm, and width is 4200nm.Adopt micro-processing technology of the prior art then, promptly at first on focused ion beam equipment, navigate to the position that deposits the ring-type multilayer film, then utilize the focused-ion-beam lithography method SiO
2Insulating barrier carries out etching, makes the ring-shaped magnetic multi-layer film of burying under insulator micron, sub-micron or the nano particle expose.Utilize the high vacuum magnetron sputtering apparatus to deposit the conductive layer Al of a layer thickness at last for 8nm, growth conditions as previously mentioned, process electrode with conventional semiconductor microactuator processing technology, promptly at first pass through gluing, preceding baking, again in ultraviolet, on the deep ultraviolet exposure machine, utilization has the reticle of pattern to be processed and exposes, then develop, photographic fixing, the back baking, with ion etching process the conductive layer on the magnetoresistance effect is carved into the shape of four electrodes then, soak with glue-dispenser at last and remove photoresist, promptly obtain pinning type ring-shaped magnetic multi-layer film of the present invention, its structural representation as shown in Figure 2.
According to the identical method of embodiment 1, utilize the no pinning type ring-shaped magnetic multi-layer film of micro-processing method preparation, the layers of material and the thickness of its magnetoresistance effect are listed in the table 1.
Table 1, the structure of utilizing the no pinning type ring-shaped magnetic multi-layer film of micro-processing method preparation of the present invention
| |
5? | 6? | 7? | 8? | 9? | 10? | ? |
| The sheet base | Composition | Si/SiO 2 | Si/SiO 2 | SiC? | SiC? | GaAs? | GaAs? |
| Thickness | 0.3mm? | 0.5mm? | 0.5mm? | 0.7mm? | 0.7mm? | 1mm? | ? |
| Bottom buffering conductive layer | Composition | Cr? | Ta? | Ta? | Cr? | Ru? | Pt? |
| Thickness | 5nm? | 10nm? | 50nm? | 100nm? | 150nm? | 300nm? | ? |
| Hard magnetic layer | Composition | Co? | Co? | CoFeB? | NiFeCo? | CoFe? | CoFeSiB |
| Thickness | 4nm? | 5nm? | 5nm? | 5nm? | 5nm? | 4nm? | ? |
| The intermediate layer | Composition | Cu? | Cu? | MgO? | Al 2O 3 | AlN? | ZnO? |
| Thickness | 1nm? | 1nm? | 1nm? | 1nm? | 1nm? | 1nm? | ? |
| Soft magnetosphere | Composition | CoFeB? | NiFeSiB | NiFe? | NiFe? | CoFeB? | NiFeSiB |
| Thickness | 4nm? | 3nm? | 3nm? | 4nm? | 3nm? | 6nm? | ? |
| Cover layer | Composition | Cr? | Ta? | Ta? | Cr? | Ru? | Pt? |
| Thickness | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | ? |
| Conductive layer | Composition | Al? | Au? | Cu? | Al? | Au? | Cu? |
| Thickness | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | ? |
| Circulus | Internal diameter | 10nm? | 200nm? | 1000nm? | 1600nm? | 2000nm? | 100000nm |
| External diameter | 20nm? | 400nm? | 2000nm? | 3200nm? | 4000nm? | 200000nm | ? |
Embodiment 11～16,
According to the identical method of embodiment 2, utilize insulator micron, sub-micron or the no pinning type ring-shaped magnetic multi-layer film of nano particle mask method preparation, the layers of material and the thickness of its magnetoresistance effect are listed in the table 2.
Table 2, insulator micron, sub-micron or the nano particle mask method of utilizing of the present invention
The structure for preparing no pinning type ring-shaped magnetic multi-layer film
| Embodiment | 11? | 12? | 13? | 14? | 15? | 16? | ? |
| The sheet base | Composition | Si/SiO 2 | Si/SiO 2 | SiC? | SiC? | GaAs? | GaAs? |
| Thickness | 0.3mm? | 0.5mm? | 0.5mm? | 0.7mm? | 0.7mm? | 1mm? | ? |
| Bottom buffering conductive layer | Composition | Cr? | Ta? | Ta? | Cr? | Ru? | Pt? |
| Thickness | 5nm? | 10nm? | 50nm? | 100nm? | 150nm? | 300nm? | ? |
| The insulator nano particle | Composition | SiO 2 | Al 2O 3 | SiO 2 | ZnO? | TiO? | SnO? |
| Diameter | 20nm? | 400nm? | 2000nm? | 3200nm? | 4000nm? | 200000nm | ? |
| Hard magnetic layer | Composition | Co? | Co? | CoFeB? | NiFeCo? | CoFe? | CoFeSiB |
| Thickness | 4nm? | 5nm? | 5nm? | 5nm? | 5nm? | 4nm? | ? |
| The intermediate layer | Composition | Cu? | Cu? | MgO? | Al 2O 3 | AlN? | ZnO? |
| Thickness | 1nm? | 1nm? | 1nm? | 1nm? | 1nm? | 1nm? | ? |
| Soft magnetosphere | Composition | CoFeB? | NiFeSiB | NiFe? | NiFe? | CoFeB? | NiFeSiB |
| Thickness | 4nm? | 3nm? | 3nm? | 4nm? | 3nm? | 6nm? | ? |
| Cover layer | Composition | Cr? | Ta? | Ta? | Cr? | Ru? | Pt? |
| Thickness | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | ? |
| Conductive layer | Composition | Al? | Au? | Cu? | Al? | Au? | Cu? |
| Thickness | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | ? |
| Circulus | Internal diameter | 10nm? | 200nm? | 1000nm? | 1600nm? | 2000nm? | 100000nm |
| External diameter | 20nm? | 400nm? | 2000nm? | 3200nm? | 4000nm? | 200000nm | ? |
Embodiment 17～22,
According to the identical method of embodiment 3, utilize micro-processing method to prepare the pinning type ring-shaped magnetic multi-layer film, the layers of material and the thickness of its magnetoresistance effect are listed in the table 3.
Table 3, the structure of utilizing micro-processing method to prepare the pinning type ring-shaped magnetic multi-layer film of the present invention
| Embodiment | 17? | 18? | 19? | 20? | 21? | 22? | ? |
| The sheet base | Composition | Si/SiO 2 | Si/SiO 2 | SiC? | SiC? | GaAs? | GaAs? |
| Thickness | 0.3mm? | 0.5mm? | 0.5mm? | 0.7mm? | 0.7mm? | 1mm? | ? |
| Bottom buffering conductive layer | Composition | Cr? | Ta? | Ta? | Cr? | Ru? | Pt? |
| Thickness | 5nm? | 10nm? | 50nm? | 100nm? | 150nm? | 300nm? | ? |
| Antiferromagnetic pinning layer | Composition | IrMn? | FeMn? | IrMn? | CrMn? | IrMn? | PtMn? |
| Thickness | 10nm? | 10nm? | 10nm? | 10nm? | 10nm? | 10nm? | ? |
| Pinned magnetosphere | Composition | Co? | Fe? | CoFeB? | NiFeCo? | CoFe? | CoFeSiB |
| Thickness | 4nm? | 5nm? | 5nm? | 5nm? | 5nm? | 4nm? | ? |
| The intermediate layer | Composition | Cu? | Cr? | MgO? | Al 2O 3 | AlN? | ZnO? |
| Thickness | 1nm? | 1nm? | 1nm? | 1nm? | 1nm? | 1nm? | ? |
| Free soft magnetosphere | Composition | Co? | Fe? | CoFeB? | NiFeCo? | CoFe? | CoFeSiB |
| Thickness | 4nm? | 5nm? | 5nm? | 5nm? | 5nm? | 4nm? | ? |
| Cover layer | Composition | Cr? | Ta? | Ta? | Cr? | Ru? | Pt? |
| Thickness | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | ? |
| Conductive layer | Composition | Al? | Au? | Cu? | Al? | Au? | Cu? |
| Thickness | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | ? |
| Circulus | Internal diameter | 10nm? | 200nm? | 1000nm? | 1600nm? | 2000nm? | 100000nm |
| External diameter | 20nm? | 400nm? | 2000nm? | 3200nm? | 4000nm? | 200000nm | ? |
Embodiment 23～28,
According to the identical method of embodiment 4, utilize insulator micron, sub-micron or nano particle mask method to prepare the pinning type ring-shaped magnetic multi-layer film, the layers of material and the thickness of its magnetoresistance effect are listed in the table 4.
Table 4, insulator micron, sub-micron or the nano particle mask method of utilizing of the present invention
The structure of preparation pinning type ring-shaped magnetic multi-layer film
| Embodiment | 23? | 24? | 25? | 26? | 27? | 28? | ? |
| The sheet base | Composition | Si/SiO 2 | Si/SiO 2 | SiC? | SiC? | GaAs? | GaAs? |
| Thickness | 0.3mm? | 0.5mm? | 0.5mm? | 0.7mm? | 0.7mm? | 1mm? | ? |
| Bottom buffering conductive layer | Composition | Cr? | Ta? | Ta? | Cr? | Ru? | Pt? |
| Thickness | 5nm? | 10nm? | 50nm? | 100nm? | 150nm? | 300nm? | ? |
| The insulator nano particle | Composition | SiO 2 | SiO 2 | Al 2O 3 | ZnO? | TiO? | SnO? |
| Diameter | 20nm? | 400nm? | 2000nm? | 3200nm? | 4000nm? | 200000nm | ? |
| Antiferromagnetic pinning layer | Composition | IrMn? | FeMn? | IrMn? | IrMn? | IrMn? | PtMn? |
| Thickness | 10nm? | 10nm? | 10nm? | 10nm? | 10nm? | 10nm? | ? |
| Pinned magnetosphere | Composition | Co? | Fe? | CoFeB? | NiFeCo? | CoFe? | CoFeSiB |
| Thickness | 4nm? | 5nm? | 5nm? | 5nm? | 5nm? | 4nm? | ? |
| The intermediate layer | Composition | Cu? | Cr? | MgO? | Al 2O 3 | AlN? | ZnO? |
| Thickness | 1nm? | 1nm? | 1nm? | 1nm? | 1nm? | 1nm? | ? |
| Free soft magnetosphere | Composition | Co? | Fe? | CoFeB? | NiFeCo? | CoFe? | CoFeSiB |
| Thickness | 4nm? | 5nm? | 5nm? | 5nm? | 5nm? | 4nm? | ? |
| Cover layer | Composition | Cr? | Ta? | Ta? | Cr? | Ru? | Pt? |
| Thickness | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | ? |
| Conductive layer | Composition | Al? | Au? | Cu? | Al? | Au? | Cu? |
| Thickness | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | 5nm? | ? |
| Circulus | Internal diameter | 10nm? | 200nm? | 1000nm? | 1600nm? | 2000nm? | 100000nm |
| External diameter | 20nm? | 400nm? | 2000nm? | 3200nm? | 4000nm? | 200000nm | ? |
Claims (14)
1. no pinning type ring-shaped magnetic multi-layer film, it comprise a substrate and on bottom buffering conductive layer, the hard magnetic layer, intermediate layer, soft magnetosphere and the cover layer that on the buffering conductive layer of described bottom, deposit successively, it is characterized in that: the cross section of described magnetoresistance effect is the closed round ring shape, the internal diameter of this annulus is 10～100000nm, and external diameter is 20～200000nm.
2. no pinning type ring-shaped magnetic multi-layer film as claimed in claim 1 is characterized in that:
Described bottom buffering conductive layer is made up of metal material, and thickness is 2～200nm;
The composition material of described hard magnetic layer is Co, Fe, and Ni, CoFe, NiFeCo, CoFeB or CoFeSiB, thickness are 2～20nm;
Described intermediate layer is made of metal level or insulator barrier layer, and wherein the material of metal level is Ti, Zn, and ZnMn, Cr, Ru, Cu, V or TiC, the material of insulator barrier layer are Al
2O
3, MgO, TiO, ZnO, (ZnMn) O, CrO, VO, or TiCO, the thickness in intermediate layer are 0.5～10nm;
The composition material of described soft magnetosphere is Co, Fe, Ni or their metal alloy NiFe, CoFeSiB, NiFeSiB; Or amorphous Co
100-x-yFe
xB
y, 0＜x＜100,0＜y≤20 wherein; Or be the Heusler alloy; Thickness is 1～20nm;
Described tectal composition material is Ta, Cu, Ru, Pt, Ag, Au or Cr, and thickness is 2～10nm.
3. no pinning type ring-shaped magnetic multi-layer film as claimed in claim 1 is characterized in that:
Described substrate is Si, Si/SiO
2, SiC, SiN or GaAs substrate, thickness is 0.3～1mm;
The composition material of described bottom buffering conductive layer is Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu or Al.
4. no pinning type ring-shaped magnetic multi-layer film as claimed in claim 1 is characterized in that: the composition material of described soft magnetosphere is Co
90Fe
10, Co
75Fe
25, Co
40Fe
40B
20, or Ni
79Fe
21
5. pinning type ring-shaped magnetic multi-layer film, it comprise a substrate and on bottom buffering conductive layer, the antiferromagnetic pinning layer, pinned magnetosphere, intermediate layer, free soft magnetosphere and the cover layer that on the buffering conductive layer of described bottom, deposit successively, it is characterized in that: the cross section of described magnetoresistance effect is the closed round ring shape, the internal diameter of this annulus is 10～100000nm, and external diameter is 20～200000nm.
6. pinning type ring-shaped magnetic multi-layer film as claimed in claim 5 is characterized in that:
Described bottom buffering conductive layer is made up of metal material, and thickness is 2～200nm;
Described antiferromagnetic pinning layer is by having anti-ferromagnetic alloy composition, and thickness is 3～30nm;
Described pinned magnetospheric composition material is Fe, Co, Ni or its alloy, and thickness is 2～20nm;
Described intermediate layer is made of metal level or insulator barrier layer, and wherein the material of metal level is Ti, Zn, and ZnMn, Cr, Ru, Cu, V or TiC, the material of insulator barrier layer are Al
2O
3, MgO, TiO, ZnO, (ZnMn) O, CrO, VO, or TiCO, the thickness in intermediate layer are 0.5～10nm;
The composition material of described free soft magnetosphere is Co, Fe, Ni or their metal alloy; Perhaps the composition material of described free soft magnetosphere is amorphous Co
100-x-yFe
xB
y, 0＜x＜100,0＜y≤20 wherein; Perhaps the composition material of described free soft magnetosphere is the NiFeSiB alloy; Perhaps the composition material of described free soft magnetosphere is the Heusler alloy; Thickness is 2～20nm;
Described tectal composition material is Ta, Cu, Ru, Pt, Ag, Au or Cr, and thickness is 2～10nm.
7. pinning type ring-shaped magnetic multi-layer film as claimed in claim 5 is characterized in that:
Described substrate is Si, Si/SiO
2, SiC, SiN or GaAs substrate, thickness is 0.3～1mm;
The composition material of described bottom buffering conductive layer is Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu or Al;
The composition material of described antiferromagnetic pinning layer is IrMn, FeMn, PtMn, or CrMn.
8. pinning type ring-shaped magnetic multi-layer film as claimed in claim 5 is characterized in that:
Described pinned magnetospheric composition material is the CoFe alloy, NiFe alloy, amorphous CoFeB alloy, or CoFeSiB;
The composition material of described free soft magnetosphere is Co
2MnSi, Co
2Cr
0.6Fe
0.4Al, Co
90Fe
10, Co
75Fe
25, Co
40Fe
40B
20Or Ni
79Fe
21
9. method of utilizing micro-processing method to prepare the described ring-shaped magnetic multi-layer film of one of claim 1 to 8 comprises following step:
1) selects a substrate, after cleaning through conventional method, on described substrate, deposit bottom buffering conductive layer with conventional film growth apparatus;
2) utilize conventional film growth means, on the buffering conductive layer of bottom, deposit hard magnetic layer, intermediate layer, soft magnetosphere and the cover layer of no pinning type ring-shaped magnetic multi-layer film successively;
Or utilize conventional film growth means, on the buffering conductive layer of bottom, deposit the antiferromagnetic pinning layer of pinning type ring-shaped magnetic multi-layer film, pinned magnetosphere, intermediate layer, free soft magnetosphere and cover layer successively;
3) adopt micro fabrication and ion etching technology with step 2) in deposited magnetoresistance effect substrate be processed into the ring-shaped magnetic multi-layer film of circulus;
4) on the ring-shaped magnetic multi-layer film that step 3) obtains, utilize conventional film growth means, the insulating barrier that deposits a layer thickness and be 100～1000nm is buried each ring-type multilayer film and is isolated mutually;
5) utilize micro fabrication, the magnetoresistance effect of burying under the insulating barrier is exposed on the position that deposits the ring-type multilayer film insulating barrier being carried out etching, obtain ring-shaped magnetic multi-layer film.
10. the method for utilizing micro-processing method to prepare ring-shaped magnetic multi-layer film as claimed in claim 9, it is characterized in that: described step 2) when deposition hard magnetic layer and soft magnetosphere, or when depositing antiferromagnetic pinning layer, pinned magnetosphere and free soft magnetosphere, apply the plane induced magnetic field of 50～5000Oe;
Described step 3) comprises that also utilizing reactive ion etching machine to assist removes photoresist;
The insulating barrier of described step 4) is SiO
2, Al
2O
3, ZnO, TiO, SnO, polyvinyl chloride, polyethylene or polypropylene.
11. a method of utilizing insulator micron, sub-micron or nano particle mask method to prepare the described ring-shaped magnetic multi-layer film of one of claim 1 to 8 comprises following step:
1) selects a substrate, after cleaning through conventional method, on described substrate, deposit bottom buffering conductive layer with conventional film growth apparatus;
2) disperseing one deck on the buffering conductive layer of the bottom that obtains in step 1) is the insulator stratum granulosum that the insulator particle of 10～100000nm is formed by diameter;
3) utilize conventional film growth means, on the buffering conductive layer of described bottom, deposit hard magnetic layer, intermediate layer, soft magnetosphere and the cover layer of no pinning type ring-shaped magnetic multi-layer film successively;
Or utilize conventional film growth means, on the buffering conductive layer of bottom, deposit the antiferromagnetic pinning layer of pinning type ring-shaped magnetic multi-layer film, pinned magnetosphere, intermediate layer, free soft magnetosphere and cover layer successively;
4) the sheet base that has deposited magnetoresistance effect is carried out ion etching, because the insulator particle has played the effect of mask, the magnetoresistance effect that is deposited on the particle below is retained, and the magnetoresistance effect that is exposed to no particle place was gone by quarter, was retained the magnetoresistance effect that is deposited on insulator particle below that gets off at last and had formed circulus;
5) utilize micro fabrication, carry out dried quarter of selection chemical reaction or chemical reaction and wet quarter on the position that deposits the ring-type multilayer film, residual insulator micron, sub-micron or nano particle are carved gone, ring-shaped magnetic multi-layer film is exposed; On the ring-shaped magnetic multi-layer film that etching is shaped, utilize conventional film growth means then, the insulating barrier that deposits a layer thickness and be 100～1000nm is buried each ring-type multilayer film and is isolated mutually; Utilize micro fabrication at last, on the position that deposits the ring-type multilayer film, insulating barrier is carried out etching, the magnetoresistance effect of burying under the insulating barrier is exposed, obtain ring-shaped magnetic multi-layer film.
12. the method for utilizing insulator micron, sub-micron or nano particle mask method to prepare ring-shaped magnetic multi-layer film as claimed in claim 11 is characterized in that:
Described step 2) insulator particle is SiO
2, Al
2O
3, ZnO, TiO, SnO, polyvinylchloride, polythene PE, or the micron of polypropylene PP, sub-micron or nano particle;
Described step 3) or when depositing antiferromagnetic pinning layer, pinned magnetosphere and free soft magnetosphere, applies the plane induced magnetic field of 50～5000Oe when deposition hard magnetic layer and soft magnetosphere;
The insulating barrier of described step 5) is SiO
2, Al
2O
3, ZnO, TiO, SnO, polyvinyl chloride, polyethylene or polypropylene.
13. claim 9 or the 11 described methods that prepare ring-shaped magnetic multi-layer film is characterized in that, also further comprise the steps:
6) utilize conventional film growth means, deposition one deck conductive layer on described ring-shaped magnetic multi-layer film;
The composition material of described conductive layer is Au, Ag, Pt, Cu, Al, Si or its alloy, and thickness is 2～200nm;
7) utilize conventional semiconductor microactuator processing technology again, conductive layer is processed into electrode, each circulus is drawn four electrodes.
14. the application of the described ring-shaped magnetic multi-layer film of one of claim 1 to 8 in the device that with the magnetoresistance effect is core.
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| CN2005101353656A CN1992104B (en) | 2005-12-31 | 2005-12-31 | Ring-shaped magnetic multi-layer film and method for making same and use |
| PCT/CN2006/003799 WO2007076718A1 (en) | 2005-12-31 | 2006-12-31 | A close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same |
| US12/159,657 US7936595B2 (en) | 2005-12-31 | 2006-12-31 | Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same |
| JP2008547841A JP4959717B2 (en) | 2005-12-31 | 2006-12-31 | Magnetic memory cell, magnetic random access memory, and access storage method thereof |
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| CN101459218B (en) * | 2007-12-13 | 2011-01-12 | 中芯国际集成电路制造(上海)有限公司 | Annular semiconductor device and producing method thereof |
| CN102110515B (en) * | 2009-12-29 | 2012-09-05 | 中国科学院物理研究所 | Magnetic multilayer film for organic magnetoresistance device and manufacturing method thereof |
| US8149614B2 (en) * | 2010-03-31 | 2012-04-03 | Nanya Technology Corp. | Magnetoresistive random access memory element and fabrication method thereof |
| CN102280575B (en) * | 2010-06-13 | 2014-03-19 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing ring structure |
| CN102479920B (en) * | 2010-11-30 | 2014-01-08 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of nanometer annular magnetic tunnel structure and manufacture method of magnetic resistance internal memory |
| CN102709467A (en) * | 2012-06-04 | 2012-10-03 | 清华大学 | High-sensitivity CoFeB based magnetic tunnel junction |
| CN104465983B (en) * | 2013-09-17 | 2017-02-22 | 中芯国际集成电路制造(上海)有限公司 | Magnetic tunnel junction and formation method thereof |
| KR20150095187A (en) * | 2014-02-11 | 2015-08-20 | 한양대학교 산학협력단 | Magnetic tunnel junction structure with perpendicular magnetic anisotropy |
| CN105021117A (en) * | 2015-06-29 | 2015-11-04 | 柳州蚊敌香业有限公司 | Stay-wire type displacement sensor and measuring system based on the sensor |
| CN107604331B (en) * | 2017-09-05 | 2019-07-12 | 中国人民解放军陆军装甲兵学院 | A method of Cu/Ti amorphous multilayer film is prepared with solid phase reaction technology |
| CN110726736B (en) * | 2019-10-18 | 2021-11-05 | 南京大学 | Passive low-power-consumption microwave detection method and device and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1510701A (en) * | 2002-12-20 | 2004-07-07 | 中国科学院物理研究所 | Ferromagnetic/manganese counterferroelectric multi-layer film nailed bounding materials and preparation thereof |
| CN1588579A (en) * | 2004-09-02 | 2005-03-02 | 中国科学院物理研究所 | Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method |
-
2005
- 2005-12-31 CN CN2005101353656A patent/CN1992104B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1510701A (en) * | 2002-12-20 | 2004-07-07 | 中国科学院物理研究所 | Ferromagnetic/manganese counterferroelectric multi-layer film nailed bounding materials and preparation thereof |
| CN1588579A (en) * | 2004-09-02 | 2005-03-02 | 中国科学院物理研究所 | Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method |
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