CN1971949A - Novel semiconductor material In-Ga-N surface barrier type solar battery and its preparation method - Google Patents
Novel semiconductor material In-Ga-N surface barrier type solar battery and its preparation method Download PDFInfo
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- CN1971949A CN1971949A CNA200610098234XA CN200610098234A CN1971949A CN 1971949 A CN1971949 A CN 1971949A CN A200610098234X A CNA200610098234X A CN A200610098234XA CN 200610098234 A CN200610098234 A CN 200610098234A CN 1971949 A CN1971949 A CN 1971949A
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- 239000000463 material Substances 0.000 title claims abstract description 60
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000004347 surface barrier Methods 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 238000009413 insulation Methods 0.000 claims abstract description 15
- 238000000137 annealing Methods 0.000 claims abstract description 6
- 238000005036 potential barrier Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 229910052594 sapphire Inorganic materials 0.000 claims description 14
- 239000010980 sapphire Substances 0.000 claims description 14
- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 230000031700 light absorption Effects 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 238000005275 alloying Methods 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 239000006117 anti-reflective coating Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910001199 N alloy Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000012467 final product Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 claims description 2
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000523 sample Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000011013 aquamarine Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 20
- 239000010408 film Substances 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- -1 indium tin metal oxide Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910002058 ternary alloy Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
This invention relates to Incan surface barrier solar batter, which is processed by the following steps: selecting semiconductor materials InxGa1-xN(0<=x<=1) as light absorptive area and InxGa1-xN MS or MIS structures; growing GaN buffer layer with thickness of 20 to 200 nm on aquamarine underlay and then after annealing growing high temperature GaN buffer layer with 1000 to 2000nm and InxGa1-XN layer; then forming Scotty structure by setting Scotty probe metal Ni and thick lead wire on InxGa1-xN; depositing Si3N4 insulation film on InxGal-xN and then setting Scotty probe metal and lead metal to form the structure.<0}.
Description
Technical field
The present invention relates to a kind of semiconductor solar cell.Especially relate to a kind of novel semiconductor material In that is used for solar cell
xGa
1-xN and In
xGa
1-xThe preparation method of N surface potential barrier type solar cell.
Background technology
Since the nineties, the application study of III group nitride material such as semiconductor gallium nitride GaN and alloy aluminum gallium nitride AlGaN thereof, indium gallium nitrogen InGaN and device development is very fast, is mainly used in opto-electronic device and high-frequency high-power microelectronic component.2002, people such as the W.Walukiewicz of the U.S. found that the energy gap of InN is 0.7eV, referring to J.Wu, W.Walukiewicz, K.M.Yu, J.W.Ager III, E.E.Haller, H.Lu, W.J.Schaff, Y.Saito, and Y.Nanishi, Appl.Phys.Lett.80,3967 (2002), rather than the 1.89eV that reported in the past.This makes In
xGa
1-xThe energy gap of N alloy is adjustable continuously to the 0.7eV of InN (X=1) from the 3.4eV of GaN (X=0) with the variation of In component, the wavelength of the absorption spectrum that it is corresponding can extend to near-infrared part (1770nm) from ultraviolet portion (365nm) always, almost intactly covered whole solar spectrum, than existing Si, solar cell materials such as InGaAsP series can only want superior many by the cover part solar spectrum, and this provides new ideal material for designing and preparing the high efficiency solar battery.
The InGaN material is compared with the materials such as existing semiconductor Si and InGaAsP series of preparation solar cell also has many advantages: 1. In
xGa
1-xN is the direct band gap material, and its absorption coefficient exceeds 1-2 the order of magnitude than materials such as Si, InGaAsP series, and photoelectric conversion efficiency is higher.2. the electron mobility height of InGaN helps improving photoelectric conversion efficiency.3. the absorption coefficient height of InGaN, the thickness of InGaN solar cell uptake zone can be thinner, can save raw material, reduces cost.The weight of device is lighter, is more suitable for being used for the space field.4. InGaN has stronger capability of resistance to radiation, is specially adapted to space intense radiation environment.5. be particularly suitable for preparing many knots (or claiming " laminated ", " series connection ") solar cell.The preparation multijunction solar cell calculates by theory needs the material of different band gap widths to be together in series, solar cell selection more than three knots of preparation at present is difficulty, be not easy to search out the material that satisfies band gap width fully, often to select different different materials (for example three the knot Ga
0.50In
0.49P/GaAs/Ge), bring difficulty to material growth and device preparation.And In
xGa
1-xIn change of component in the N ternary alloy three-partalloy can continuously change the band gap width value, and preparing multijunction solar cell with indium gallium nitrogen alloy only need be with a kind of In
xGa
1-xThe N material only changes the In component and gets final product, and conversion efficiency also will improve many.The theoretical transformation efficient of Theoretical Calculation InGaN multijunction solar cell maximum can reach 85%! Exceed the data of present other materials multijunction solar cell greatly.In sum, InGaN is a kind of excellent material of suitable manufacturing solar cell.
To In
xGa
1-xThe In of the particularly high component thick film of N
xGa
1-xThe understanding of N ternary alloy three-partalloy has just begun soon, and material growing technology such as the growth of this material, the doping of p type and rerum natura are still among continuous research and development.
Do not see the domestic and foreign literature report as yet with any kind of type solar cell of InGaN preparation at present.The structure of solar cell mainly contains p-n junction, surface potential barrier types such as (containing schottky junction (MS), metal-insulator layer-semiconductor (MIS) structure), the internal electric field that relies on these knots with light induced electron-hole to separately and scan out the electric current that forms external circuit.To mix that is that all right ripe in view of present p type, and we have at first studied InGaN surface potential barrier type solar cell.
Summary of the invention
The objective of the invention is: structure and preparation method that a kind of novel semiconductor material In gallium nitrogen (InGaN) surface potential barrier type solar cell is provided.Especially In
xGa
1-xThe structure and the preparation method of N (0≤＜x＜≤1) Schottky (MS) and metal-insulator layer-semiconductor (MIS) surface potential barrier type solar cell.
The object of the present invention is achieved like this: In-Ga-N surface barrier type solar battery, select semi-conducting material In for use
xGa
1-xN (0≤x≤1) is light absorption district and In
xGa
1-xN MS and MIS body structure surface potential barrier type solar cell, the low temperature GaN resilient coating of growth 20-200nm thickness on sapphire (sapphire) backing material, the high temperature GaN resilient coating of epitaxial growth 1000-2000nm thickness and the In of 200-1000nm thickness are followed in the annealing back
xGa
1-xThe N light absorbing zone is then at In
xGa
1-xN is provided with Schottky contacts metal Ni and thick lead-in wire metal A u forms Schottky (MS) structure, and at In
xGa
1-xThe Si of the last deposit 2-20nm of N thickness
3N
4Establish Schottky contacts metal and thick lead-in wire metal behind the insulation film again and form metal-semiconductor-metal (MIS) structure, and on the n-InGaN material, be provided with Ti/Al/Ni/Au multiple layer metal conductive electrode, form the surface potential barrier InGaN solar cell of MS and two kinds of structures of MIS.
Described battery is with In
xGa
1-xN (0≤x≤1, especially 0.01≤x≤0.99) preparation two knots and above multijunction solar cells can continuously change the band gap width value by the In change of component, prepare multijunction solar cell with indium gallium nitrogen alloy, with a kind of In
xGa
1-xThe N material only changes the In component and gets final product.
Described battery is selected new semi-conducting material In for use
xGa
1-xN is the light absorption district, and at In
xGa
1-xThe N surface is provided with Schottky contacts, this Schottky contacts adopts electron beam evaporation or sputtering method, select films such as metal Ni or Pt, Au, indium tin metal oxide IT0 for use, its thickness is 5-50nm, makes thick lead-in wire metal A u electrode layer then and form the MS structure on semi-transparent metal layer.
Described battery is selected new semi-conducting material In for use
xGa
1-xN is the light absorption district, just forms the MIS structure behind the insertion insulation film in above-mentioned MS structure, and this insulation film is selected Si for use
3N
4, its thickness is 2-20nm.
When In-Ga-N surface barrier type solar battery prepares, adopt metallo-organic compound chemical vapor deposition (MOCVD) method, growing low temperature GaN resilient coating on sapphire (sapphire) backing material, the high temperature GaN resilient coating of epitaxial growth 1000-2000nm thickness and the In of 200-1000nm thickness are followed in the annealing back
xGa
1-xThe N light absorbing zone is then at In
xGa
1-xN is provided with Schottky contacts metal Ni and thick lead-in wire metal A u forms Schottky (MS) structure, and at In
xGa
1-xThe Si of the last deposit 2-20nm of N thickness
3N
4Establish Schottky contacts metal and thick lead-in wire metal behind the insulation film again and form metal-semiconductor-metal (MIS) structure, and on the n-InGaN material, be provided with Ti/Al/Ni/Au multiple layer metal conductive electrode, form the surface potential barrier type InGaN solar cell of MS and two kinds of structures of MIS.
Especially In grows behind the high temperature GaN resilient coating of the low temperature GaN resilient coating of growth 20-200nm thickness on the sapphire bottom material and 1000-2000nm thickness
xGa
1-xThe N material.In
xGa
1-xThe N material can continuously change the band gap width value by the In change of component, with the above multijunction solar cell of indium gallium nitrogen preparation two knots, only uses with a kind of In
xGa
1-xN (0≤x≤1, especially 0.01≤x≤0.99) ternary-alloy material only changes the In component and gets final product.
Parameters such as the source gas flow of MOCVD and growth temperature.Synthetically grown low temperature GaN cushioning layer material on Sapphire Substrate, with 500-700 ℃ of growth, the atomic ratio of Ga and N is 500-3000, thick 20-200nm.Again on this low temperature GaN cushioning layer material with 1000-1100 ℃ the growth high temperature the GaN resilient coating, the atomic ratio of Ga and N is 500-5000, thick 1000-2000nm.GaN is low, high temperature buffer layer material growth pressure is 0-700 Torr.In
xGa
1-xN material growth conditions is, growth temperature is a 500-1050 ℃ of scope, and growth pressure is 0-700Torr, and the three price ratio pentavalent atom of growing are than being 500-30000.
Use semi-conducting material In
xGa
1-xN is the light absorption district, and at n-In
xGa
1-xN surface (or the In after etching
xGa
1-xOn the N table top) make the ohmic contact conductive electrode, adopt electron beam evaporation or sputtering method, select Ti/Al/Ni (or Ti)/Au multiple layer metal for use, typical thickness is 30/100/40/200nm.Carry out the alloying of Ohm contact electrode then, its condition is at pure N
2In, 750-950 ℃, 10-50 second.
With new semi-conducting material In
xGa
1-xN is the light absorption district, at n-In
xGa
1-xN surface makes Ohm contact electrode, finishes after the alloying at In
xGa
1-xThe N surface makes the MIS structure, and insulation film is wherein selected Si for use
3N
4Material, this material adopts the deposit under conventional growth conditions of PECVD method.
The characteristics of the new surface potential barrier type solar cell that the present invention proposes are: the characteristics of In-Ga-N surface barrier type solar battery of the present invention are: 1) as the new material In in light absorption district
xGa
1-xN, its absorption coefficient height, radioresistance, thereby have the characteristics of conversion efficiency height, in light weight, anti-intense radiation etc. with the solar cell that its is made; 2) new material In
xGa
1-xThe band gap width of N can be by changing In component X and adjustable continuously from the 3.4-0.7eV scope, and its corresponding absorbing wavelength has just in time covered whole solar spectrum, therefore can obtain the In that designing institute needs any band gap width easily in same growing system
xGa
1-xThe N material is particularly suitable for doing the multijunction solar cell of high conversion efficiency; 3) adopt Si
3N
4Insulation film inserts the In that constitutes the MIS structure between the MS Schottky contacts
xGa
1-xThe N solar cell can reach the effect that reduces the compound and majority carrier heat emission electric current in interface, therefore reduces the loss of photo-generated carrier, and its photoelectric conversion efficiency has significantly than the solar cell of MS structure and improves.
Description of drawings
Fig. 1 is In of the present invention
xGa
1-xThe typical structure generalized section of N MIS body structure surface potential barrier type solar cell.
Fig. 2 is Ni/In of the present invention
0.3Ga
0.7N MS structure and Ni/Si
3N
4/ In
0.3Ga
0.7Reverse current-voltage characteristic the figure (under the unglazed photograph) of N MIS body structure surface potential barrier type solar cell.
Fig. 3 is Ni/In of the present invention
0.3Ga
0.7N MS structure and Ni/Si
3N
4/ In
0.3Ga
0.7The typical light electroresponse spectrogram of N MIS body structure surface potential barrier type solar cell under zero-bias.
Embodiment
The structure of the InGaNMIS body structure surface potential barrier type solar cell as shown in accompanying drawing 1 is growth successively on c-face (0001) saphire substrate material: low temperature GaN (LT-GaN) resilient coating, high temperature GaN (HT-GaN) resilient coating, In
xGa
1-xN light absorbing zone, Si
3N
4Insulating barrier, and at Si
3N
4Insulating barrier is provided with the Schottky contacts metal, at n-In
xGa
1-xThe N layer is provided with conductive electrode.And the structure of InGaN MS surface potential barrier solar cell is same as described above, and Si does not just grow
3N
4Insulating barrier is directly at In
xGa
1-xThe N laminar surface is provided with the Schottky contacts metal.
Material growth method is: adopting the MOCVD method is at first growing low temperature GaN resilient coating of substrate with (0001) sapphire, growth temperature is 500-700 ℃ of scope, thickness carries out 900-1100 ℃ high annealing then in the 20-200nm scope to low temperature GaN resilient coating.Then 1000-1100 ℃ of temperature grow a layer thickness be the high temperature GaN resilient coating of 1000-2000nm after regrowth thickness be the In of 200-1000nm
xGa
1-xThe N material.In
xGa
1-xThe actual conditions of N material growth is to be 500-30000 at 500-1050 ℃ of temperature range, growth pressure at 0-700Torr, growth three price ratio pentavalent atom ratio.The growing GaN source of the gas is: trimethyl gallium (TMG), ammonia (NH
3), carrier gas is nitrogen (N
2).Growth In
xGa
1-xFeed the organic In of metal source during N, as trimethyl indium (TMI).Si
3N
4Growth for Thin Film adopt plasma-reinforced chemical vapour deposition (PECVD) method routinely growth conditions at In
xGa
1-xN superficial growth Si
3N
4Film, its thickness are the 2-20nm scope.
Using PECVD method deposit Si under conventional growth conditions on the sample surfaces at last
3N
4(or SiO film) one deck antireflective coating, thickness is 1/4 optical wavelength.
To In
xGa
1-xThe method of N MS and MIS body structure surface potential barrier type solar cell preparation is to be substrate with (0001) sapphire, inserts and adopts the growth of MOCVD method in the reative cell, finishes the material growth through low, high temperature buffer layer growth, outer layer growth three phases; The MS structure In
xGa
1-xThe technical process feature of N surface potential barrier solar cell preparation is at n-In
xGa
1-xBehind the last deposited by electron beam evaporation of N or sputtered with Ti/Al/Ni (or Ti)/Au multiple layer metal, carry out alloying, be made into conductive electrode; Behind deposited by electron beam evaporation or sputter Ni or the thin metals such as Pt, Au, ITO again go between thick metal A u layer of evaporation or sputter form Schottky contacts and lead-in wire metal electrode thereof; The graphic making of metal electrode becomes palisade or other shapes, adopts photoetching technique and positive glue lift-off technology preparation; On sample surfaces, adopt PECVD method deposit one deck Si at last
3N
4Or the SiO antireflective coating, thickness is 1/4 optical wavelength.
And the MIS structure In
xGa
1-xThe technical process of N surface potential barrier solar cell preparation is to insert the Si that one deck adopts the deposit of PECVD method in above-mentioned MS structure
3N
4Insulation film, its thickness are 2-20nm.
The preparation of InGaN surface potential barrier solar cell of the present invention has flat tube and two kinds of technologies of table top pipe; Main preparation technology's flow process of InGaN MS body structure surface potential barrier solar cell is as follows: flat tube technology is made Ohm contact electrode (deliberately do not mix in the at present InGaN growth and just become N-shaped) table top plumber skill and is then needed the first etching one deck that goes down on n-InGaN surface, and the n-InGaN mesa surfaces after etching is made the alloying of Ohm contact electrode → Ohm contact electrode → InGaN surface and made translucent Schottky contacts metal level → make palisade uniform thickness metal lead wire conductive electrode layer → make one deck antireflective coating at sample surfaces at last in semi-transparent metal layer. Make Ohm contact electrode on the n-InGaN surface, this electrode can be used multiple layer metals such as Ti/Al/Ni/Au, Ti/Al/Ti/Au, and the Ti/Al/Ni/Au typical thickness is followed successively by 30/100/40/200nm.The alloying condition of Ohm contact electrode:in high-purity N2In, 750-950 ℃, 10-50 second.Make one deck semi-transparent metal layer on the InGaN surface, the high materials of work function such as optional metal Ni, Pt, Au or indium tin metal oxide ITO, thickness is 5-50nm.Thick metal lead wire layer on the semi-transparent metal layer selects the good metals of conduction such as Au, and thickness is 100-300nm.Ohmic contact, schottky junctions are touched electrode metal and are all adopted electron beam evaporation or sputtering method to obtain.Ohmic contact, Schottky contacts electrode metal electrode pattern can be made into palisade or other shapes, adopt photoetching technique and positive glue lift-off technology preparation.Make one deck antireflective coating at last on sample surfaces, this film is selected Si for use
3N
4Or SiO, adopting the deposit under conventional growth conditions of PECVD method, thickness is 1/4 optical wavelength.The preparation of InGaNMIS body structure surface potential barrier solar cell, identical with InGaN MS surface potential barrier solar cell just increases one deck Si between MS
3N
4Film.Concrete is after the Ohm contact electrode alloying is finished, at sample surfaces PECVD method condition growth Si routinely
3N
4Film, its thickness are 2-20nm, then at Si
3N
4Make Schottky contacts on the film again.
Calculate through theory, the InGaN solar cell of high conversion efficiency needs high In ingredient In
xGa
1-xN material (unijunction In for example
xGa
1-xThe N solar cell needs X＞0.7) because present high-quality high In ingredient In
xGa
1-xN material growth also has certain difficulty, and what the present invention showed a preparation is 0.3 In with the In component
0.3Ga
0.7The N material is the uptake zone, be that Schottky contacts and Au are the thick metal of lead-in wire, are Ohm contact electrode and with the thick Si of 10nm with Ti/Al/Ni/Au with Ni
3N
4Reverse current-voltage characteristic (Fig. 2) and photoelectric respone spectrum (Fig. 3) for the MS of insulation film and MIS body structure surface potential barrier type solar cell sample (die surfaces is not made antireflective coating).The dark current that is presented at MIS body structure surface potential barrier solar cell under the zero-bias from Fig. 2 is 3.5x10
-10A/mm
24.0x10 than MS structure
-8A/mm
2Low 2 most magnitudes.The In that Fig. 3 shows
0.3Ga
0.7N material MS and MIS body structure surface potential barrier solar cell photoelectric respone spectrum are measured under xenon source, the long wave cut-off function limit is all at about 460nn place, the photoelectric respone rate of MIS structure solar cell reaches 0.18A/W (450nm during zero-bias, 3V) (450nm 3V) exceeds more than 10 times than the 0.016A/W of MS structure.The comparative result of Fig. 2 and Fig. 3 shows that the MIS structure has significantly raising than the performance of MS body structure surface potential barrier type solar cell.
Claims (9)
1, In-Ga-N surface barrier type solar battery is characterized in that selecting for use semi-conducting material In
xGa
1-xN (0≤x≤1) is light absorption district and In
xGa
1-xN MS and MIS body structure surface potential barrier type solar cell, the low temperature GaN resilient coating of growth 20-200nm thickness on sapphire (sapphire) backing material, the high temperature GaN resilient coating of epitaxial growth 1000-2000nm thickness and the In of 200-1000nm thickness are followed in the annealing back
xGa
1-xThe N light absorbing zone is then at In
xGa
1-xN is provided with Schottky contacts metal Ni and thick lead-in wire metal A u forms Schottky (MS) structure, and at In
xGa
1-xThe Si of the last deposit 2-20nm of N thickness
3N
4Establish Schottky contacts metal and thick lead-in wire metal behind the insulation film again and form metal-semiconductor-metal (MIS) structure, and on the n-InGaN material, be provided with Ti/Al/Ni/Au multiple layer metal conductive electrode, form the surface potential barrier InGaN solar cell of MS and two kinds of structures of MIS.
2, In-Ga-N surface barrier type solar battery according to claim 1 is characterized in that with In
xGa
1-xN (0≤x≤1, especially 0.01≤＜x＜≤0.99) preparation two knots and above multijunction solar cells, can continuously change the band gap width value by the In change of component, prepare multijunction solar cell with indium gallium nitrogen alloy, with a kind of In
xGa
1-xThe N material only changes the In component and gets final product.
3, In-Ga-N surface barrier type solar battery according to claim 1 is characterized in that selecting for use new semi-conducting material In
xGa
1-xN is the light absorption district, and at In
xGa
1-xThe N surface is provided with Schottky contacts, this Schottky contacts adopts electron beam evaporation or sputtering method, select films such as metal Ni or Pt, Au, ITO for use, its thickness is 5-50nm, adopt the preparation of electron beam evaporation or sputtering method, on semi-transparent metal layer, make thick lead-in wire metal A u electrode layer then and form the MS structure.
4, In-Ga-N surface barrier type solar battery according to claim 1 is characterized in that selecting for use new semi-conducting material In
xGa
1-xN is the light absorption district, just forms the MIS structure behind the insertion insulation film in above-mentioned MS structure, and this insulation film is selected Si for use
3N
4, its thickness is 2-20nm.
5, In-Ga-N surface barrier type solar battery preparation method, the material that it is characterized in that the following structure of growth on (0001) sapphire (sapphire) backing material: the low temperature GaN resilient coating of growth 20-200nm thickness on saphire substrate material, the high temperature GaN resilient coating of epitaxial growth 1000-2000nm thickness and the In of 200-1000nm thickness are followed in the annealing back
xGa
1-xThe N light absorbing zone is then at In
xGa
1-xN is provided with Schottky contacts metal Ni and thick lead-in wire metal A u layer forms Schottky (MS) structure, and at In
xGa
1-xThe Si of the last deposit 2-20nm of N thickness
3N
4Establish Schottky contacts metal and thick lead-in wire metal A u layer behind the insulation film again and form metal-semiconductor-metal (MIS) structure, and on the n-InGaN material, be provided with Ti/Al/Ni/Au multiple layer metal conductive electrode, form the surface potential barrier InGaN solar cell of MS and two kinds of structures of MIS.
6, by the described In-Ga-N surface barrier type solar battery preparation method of claim 5, it is characterized in that parameters such as source gas flow and growth temperature.Synthetically grown low temperature GaN cushioning layer material on Sapphire Substrate, with 500-700 ℃ of growth, the atomic ratio of Ga and N is 500-3000, thick 20-200nm.Again on this low temperature GaN cushioning layer material with 1000-1100 ℃ the growth high temperature the GaN resilient coating, the atomic ratio of Ga and N is 500-5000.GaN is low, high temperature buffer layer material growth pressure is 0-700 Torr.In
xGa
1-xN material growth conditions is, growth temperature is a 500-1050 ℃ of scope, and growth pressure is 0-700 Torr, and the three price ratio pentavalent atom of growing are than being 500-30000.
7,, it is characterized in that selecting for use new semi-conducting material In by the described In-Ga-N surface barrier type solar battery preparation method of claim 5
xGa
1-xN is the light absorption district, and at n-In
xGa
1-xN surface (or the In after etching
xGa
1-xOn the N table top) make the ohmic contact conductive electrode, adopt electron beam evaporation or sputtering method, select Ti/Al/Ni (or Ti)/Au multiple layer metal for use, typical thickness is 30/100/40/200nm.Carry out the alloying of Ohm contact electrode then, its condition is at pure N
2In, 750-950 ℃, 10-50 second.
8, by the described In-Ga-N surface barrier type solar battery preparation method of claim 5, it is characterized in that the MIS structure In
xGa
1-xThe technical process of N surface potential barrier solar cell preparation is to insert the Si that one deck adopts the deposit of PECVD method in above-mentioned MS structure
3N
4Insulation film.
9, by the described In-Ga-N surface barrier type solar battery preparation method of claim 5, it is characterized in that In
xGa
1-xThe method of NMS and MIS body structure surface potential barrier type solar cell preparation is to be substrate with (0001) sapphire, inserts and adopts the growth of MOCVD method in the reative cell, finishes the material growth through low, high temperature buffer layer growth, outer layer growth three phases; The MS structure In
xGa
1-xThe technical process feature of N surface potential barrier type solar cell preparation is at n-In
xGa
1-xBehind the last deposited by electron beam evaporation of N or sputtered with Ti/Al/Ni (or Ti)/Au multiple layer metal, carry out alloying, be made into conductive electrode; Evaporate again behind deposited by electron beam evaporation or sputter Ni or the thin metals such as Pt, Au, ITO or the thick lead-in wire metal A of sputter u layer formation Schottky contacts and lead-in wire metal electrode thereof; The graphic making of metal electrode becomes palisade or other shapes, adopts photoetching technique and positive glue lift-off technology preparation; On sample surfaces, adopt PECVD method deposit one deck Si at last
3N
4Or the SiO antireflective coating, thickness is 1/4 optical wavelength.The MIS structure In
xGa
1-xThe technical process feature of N surface potential barrier type solar cell preparation is to insert the Si that one deck adopts the deposit of PECVD method in above-mentioned MS structure
3N
4Insulation film.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101364482B (en) * | 2008-09-19 | 2010-12-08 | 南京大学 | Visible light InGaN based photoelectrochemical cell and preparation |
| CN102791475A (en) * | 2010-03-02 | 2012-11-21 | 住友金属矿山株式会社 | Laminate, method for producing same, and functional element using same |
| CN103946986A (en) * | 2011-11-14 | 2014-07-23 | 太平洋银泰格拉泰德能源公司 | Devices, systems and methods for electromagnetic energy collection |
| CN104393038A (en) * | 2014-10-23 | 2015-03-04 | 西安电子科技大学 | High-breakdown voltage InAlN/AlGaN high-electron mobility transistor and manufacturing method thereof |
-
2006
- 2006-12-06 CN CNA200610098234XA patent/CN1971949A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101364482B (en) * | 2008-09-19 | 2010-12-08 | 南京大学 | Visible light InGaN based photoelectrochemical cell and preparation |
| CN102791475A (en) * | 2010-03-02 | 2012-11-21 | 住友金属矿山株式会社 | Laminate, method for producing same, and functional element using same |
| CN102791475B (en) * | 2010-03-02 | 2016-01-20 | 住友金属矿山株式会社 | Lamilated body and manufacture method thereof and use its function element |
| CN103946986A (en) * | 2011-11-14 | 2014-07-23 | 太平洋银泰格拉泰德能源公司 | Devices, systems and methods for electromagnetic energy collection |
| CN104393038A (en) * | 2014-10-23 | 2015-03-04 | 西安电子科技大学 | High-breakdown voltage InAlN/AlGaN high-electron mobility transistor and manufacturing method thereof |
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