CN1971425A - Measuring system and method for photoelectric difference - Google Patents
Measuring system and method for photoelectric difference Download PDFInfo
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- CN1971425A CN1971425A CN 200610117401 CN200610117401A CN1971425A CN 1971425 A CN1971425 A CN 1971425A CN 200610117401 CN200610117401 CN 200610117401 CN 200610117401 A CN200610117401 A CN 200610117401A CN 1971425 A CN1971425 A CN 1971425A
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Abstract
The invention discloses a difference measurement system that comprises a narrow-band light source and a wide-band light source in different waveband, a coupling system used to couple light beam, the first imaging system, and wave length beam splitter, two surfaces to be measured, wave length beam-combiner, the second imaging system, energy beam splitter, position sensor used to loose measure position, amplification system and position sensor used to accurate measure position. The invention realizes the high accuracy and high stability measurement of relative position between two surfaces.
Description
Affiliated technical field
The present invention relates to ray machine electricity equipment technical field, particularly about a kind of photoelectric difference system and measuring method.
Background technology
Lithographic equipment (litho machine) is an exposure device of the figure on the mask being transferred in certain proportion (as silicon chip etc.) on the object that will process, please refer to Fig. 1, and Fig. 1 is the litho machine structural representation.In this exposure device, the respective surfaces of the object that is exposed is remained within the focal depth range of the projection objective in the exposure device; This just needs a measuring system to measure the relative position of the respective surfaces of processing object with respect to the best focal plane of projection objective.This measuring system is called as the focusing and leveling system in litho machine.Rapid increase along with the integrated level of integrated circuit, the lines that expose are more and more thinner also more and more closeer, the resolution of projection objective improves constantly, depth of focus constantly reduces, the exposure object respective surfaces is remained in the depth of focus, the measuring accuracy and the stability of focusing leveling system has also been proposed more and more higher requirement.
Suppose that the best focal plane of projection objective fixes with respect to the relative position of the physical construction (as last surface, its picture side) of projection objective, make processed object, for example the upper surface of silicon chip remains within the depth of focus of projection objective, just to keep silicon chip upper surface with projection objective along the relative position of projection objective optical axis direction within the specific limits.Have two kinds of methods can realize this purpose: a kind of is the relative position of measuring both, regulate the position of projection objective then, the method that is disclosed as U.S. Pat 4441808, but this method can only adopt when not high the resolution of projection objective and stability requirement; Another kind method is exactly common accent silicon chip position of adopting of modern litho machine rather than the method for adjusting the projection objective position, and this method precision is higher, and is easy to realize.
The early stage implementation method of focusing and leveling system is to adopt pneumatic method, as: U.S. Pat 4153341, US4441808, US4477183 etc., the advantage of these class methods is that measure and carry out can be integrated, but measuring accuracy is not high, and measured zone can not be the exposure area.Along with improving constantly that focusing leveling system measuring accuracy is required, this pneumatic method is eliminated gradually, and main now employing capacitive transducer and photoeletric measuring system are realized.Because the critical defect of capacitive transducer is that its measured zone is not the exposure area of exposure slit, as U.S. Pat 2002/0158185 A1, this has just limited the application of this method in single work stage etching system.Each big lithographic equipment supply commercial city mainly adopts photoeletric measuring system to realize the focusing and leveling system now, adopts based on the Morie fringe of grating and the photoelectric measurement method of 4 quadrant detector (seeing U.S. Pat 5191200) as ASML; Nikon adopts the photo-detection method (seeing U.S. Pat 6765647B1) based on slit and 4 quadrant detector; And the recent focusing and leveling system of Canon mainly adopts the Photodetection system (seeing U.S. Pat 6081614) based on pin hole and area array CCD.
First kind of above-mentioned photoelectric measurement method, it is the difference measurement system, very high measuring accuracy and stability are arranged, but the structure of this system and follow-up signal Processing more complicated all, and to the initial integrated installation of its system itself and the requirement of adorning the school also than higher; Two kinds photoelectric measurement method then, owing to be not the difference measurement system, so they are comparatively responsive to mechanical vibration and thermal denaturation etc., less stable, and because they just measure the absolute position of silicon chip, rather than measurement is with respect to the relative position relation of projection objective, so this class measuring method can't compensate the position excursion of the best focal plane that is caused by the position excursion of projection objective.
Summary of the invention
The objective of the invention is for solving above-mentioned prior art problem, realize that the high-precision and high-stability of two plane relative positions is measured.
For realizing goal of the invention of the present invention, the invention provides a kind of photoelectric difference system, comprising: a narrowband light source and a broadband light light source are used for the coupling mechanism of coupled light beam, first imaging system, the wave length beam splitting device, two tested surfaces, wavelength bundling device, second imaging system, the energy beam splitter is used for the bigness scale position sensitive detector of position bigness scale, is used for the amplification system and the accurate measurement position sensitive detector of position accurate measurement.
Wherein said narrowband light source can be impulse semiconductor laser, is the focusing orthopedic systems between impulse semiconductor laser and the coupling mechanism.Described broadband light light source can be halogen tungsten lamp, one side of halogen tungsten lamp is a coupling mechanism, opposite side is a condenser, also comprise between halogen tungsten lamp and the coupling mechanism by the beam shaping system, being photoswitch in the middle of the beam shaping system, is the relation of integral multiple between the modulating frequency of this photoswitch to the modulating frequency of broadband light and narrow band light.Described photoelectric difference system also comprises transmission cable that is used for transmission coupler output light and the beam shaping system that is used to adjust the transmission cable output beam, is the hot spot mask between the beam shaping system and first imaging system.In addition, native system also comprises the catoptron that adopts owing to the structure needs.It between described energy beam splitter and the bigness scale position sensitive detector hot spot mask of selecting hot spot.The position sensitive detector of described bigness scale and the position sensitive detector of accurate measurement all are one dimensions.
For realizing goal of the invention of the present invention, the present invention also provides a kind of photoelectric difference method, comprises the following steps: that narrow band light and broadband light form coupled light beam through coupled system, and coupled light beam illumination hot spot mask produces hot spot; Through behind first imaging system and the wave length beam splitting device, broadband light and narrow band light are separated hot spot successively, and are imaged onto respectively on two tested surfaces; Broadband light and narrow band light through two tested surface reflections are coupled into coupled light beam by the wavelength bundling device; After coupled light beam is passed through second imaging system, through the energy beam splitter, and separated into two parts; Part direct imaging is on the position sensitive detector of bigness scale; Another part is imaged on the position sensitive detector of accurate measurement through after the amplification system.
Wherein, described broadband light is through before the coupling mechanism, also comprises being modulated into narrow band light by photoswitch replacing synchronous step.Before the coupled light beam illumination hot spot, also comprise step by the beam shaping system.Before light beam is imaged on the bigness scale position sensitive detector, also comprise the step of selecting by the hot spot mask.
Adopt photoelectric difference system of the present invention and measuring method, can require to provide the measuring accuracy of high precision, high stability and desirable measurement range by comparatively simple structure and data processing.
Description of drawings
Fig. 1 is the litho machine structural representation.
Fig. 2 is the light source module synoptic diagram of measuring system.
Fig. 3 is that ruddiness and white light replace synchronous synoptic diagram in the light source module.
Fig. 4 is a measuring system agent structure synoptic diagram.
Fig. 5 is the distribution schematic diagram of the measured zone of whole focusing and leveling.
Embodiment
This measuring system can be as the focusing and leveling system in the litho machine, a subsystem as litho machine, it is mainly used to measure the relative position of silicon chip with respect to the best focal plane of exposure device projection objective, cooperate execution architecture together, the surface of processing object is remained in the best focal plane of projection objective, thereby the figure on the mask plate is transferred on the processing object ideally.
Because the measurement of silicon chip is to adopt light probe, and can not influence the work of projection objective, so the main part of this focusing and leveling system can be placed on projection lens of lithography machine around, and the Lights section should be placed on the position away from the exposure area because heating problem.
Measuring process is as follows: different-waveband replace synchronous a branch of narrow band light and a branch of broadband light, use ruddiness and white light here respectively, be coupling in and come together to throw light on the hot spot mask and produce hot spot, after the imaging system and wave length beam splitting device of these hot spots through the back, be imaged onto the lower surface of projection objective and the upper surface of silicon chip respectively; After the reflection through projection objective lower surface and silicon chip upper surface, this two-beam is coupled to together once more by bundling device again, through the imaging system of back, is divided into two parts by an energy beam splitter; A part is selected behind the mask by direct imaging to the sensor of position through hot spot, and another part is imaged onto on the position sensor after amplifying.It is bigger not formed measurement range through the measurement branches of amplifying, the bigness scale road that measuring accuracy is lower; It is less that the measurement branches of process amplification system has then formed measurement range, the accurate measurement road that measuring accuracy is higher.
The gloss broadband light of getting to the silicon chip upper surface in the present embodiment be because: if after the laser of arrowband gets on the silicon chip upper surface that scribbles photoresist, main reflection is the upper and lower surface at photoresist, so the light of following table reflection just forms dull and stereotyped the interference on photoresist, and interference fringe is a noise for the position sensitive detector of back, the measuring accuracy of the Sensitive Apparatus that can dip; And adopt white light can eliminate interference and improve detection accuracy.There is not dull and stereotyped interference owing to get to the light of projection objective lower surface, so can adopt the laser of arrowband.
The ruddiness of getting to the projection objective lower surface has carried the Z of projection objective lower surface to (along the desired light direction of principal axis of projection objective) and its Rx, the information of Ry three degree of freedom; The white light of getting to the silicon chip upper surface has equally carried the silicon chip upper surface and has wanted the Z of exposure area, Rx, the information of Ry three degree of freedom.Ruddiness and white light are alternately got on the position sensor by the modulation of light source module, are finally surveyed and are obtained the silicon chip upper surface by follow-up signal Processing by position sensor and want the Δ Z of exposure area with respect to the projection objective lower surface, Δ Rx, the information of Δ Ry.Because the best focal plane of projection objective can be thought changeless with respect to the distance of the lower surface of projection objective, be a machine constant, so this focusing and leveling system just can measure the silicon chip upper surface that will the expose positional information with respect to the best focal plane of projection objective.The work stage system that this information is sent to the clamping silicon chip forms a closed loop servo control, and the area of silicon wafer that be exposed is remained in the best focal plane of projection objective always.
During the focusing and leveling system works, install through initial earlier, the zero plane of focusing and leveling system is overlapped with the best focal plane (or setting face) of projection objective; Again silicon chip is carried out focusing and leveling, generally be divided into whole (whole silicon wafer) focusing and leveling and pursue (each exposure area) focusing and leveling: whole field focusing and leveling is first to a collection of similar silicon chip, with this focusing and leveling system, 120 three sector regions of spending of being separated by to silicon chip are measured respectively and are adjusted, thereby silicon chip is overlapped with certain precision maintenance and the best focal plane of projection objective (or setting plane).Only need then to measure that any one zone gets final product in three sector regions for the focusing and leveling of all the other silicon chips of this batch silicon chip.By field measurement is through behind whole the focusing and leveling, enters by a process of exposure.The silicon chip that meet the SEMI standard this moment has been within the accurate measurement scope of this focusing and leveling system after through whole audience focusing and leveling, therefore take over the measuring task of focusing and leveling by the fine system of this focusing and leveling sensor-based system, form servo-control system with topworks and make measuring object and best focal plane well keep overlapping, thus the desirable critical size and the feature of assurance photo-etching machine exposal figure.
Because this photoeletric measuring system will carry out analog to digital conversion to the simulating signal of exporting from the position sensing sensing element, and limits and the systemic resolution requirement according to the figure place of modulus switching device, can only change the signal of certain variation range.Because different measuring objects is bigger to the variation of the reflectivity of light beam, promptly bigger from the variation range of the simulating signal of position sensitive detector output for different detected object, this may surpass the working range of follow-up modulus switching device.In order to address this problem, in this measuring system, the pattern of FEEDBACK CONTROL is carried out in employing to the power of light source according to the variation of the simulating signal of sensitive detection parts output.When making the simulating signal of position sensitive detector output exceed the working range of follow-up analog to digital converter owing to the measuring object change, power (or attenuation module of control light source) by feedback control module control light source, thereby make analog to digital converter keep operate as normal always, just make this sensing measurement system can measure the measurand of all different reflectivities.
Below in conjunction with the drawings and specific embodiments, the invention will be further described.
Fig. 1 is the litho machine structural representation, wherein projection objective 3 with the information projection on the mask 1 to silicon chip 5; 2 is the projection objective optical axis; 4 is focusing and leveling sensor, is used for measuring the relative position of the upper surface of silicon chip with respect to the best focal plane of projection objective.
Fig. 2 is the light source module synoptic diagram of measuring system, wherein gets on the coupling mechanism 5 by total reflection behind the ruddiness process focusing orthopedic systems 4 that impulse semiconductor laser 1 sends; And the white light that halogen tungsten lamp 2 sends passes through lens 6 and 8 shapings more earlier through condenser 3 reflections, simultaneously by photoswitch 7 be modulated into the light that sends with impulse semiconductor laser 1 alternately synchronously after, get on the coupling mechanism 5 by full impregnated; The light beam that sends of laser instrument 1 and halogen tungsten lamp 2 just is coupled in the transmission cable 9 together like this.Here the centre wavelength of impulse semiconductor laser 1 can be 650nm; Condenser 3 has the effect of reflection and filtering simultaneously, the useful wave band of its reflection, and as the wave band of 700-1100nm, and other wave band is fallen in transmission; Photoswitch 7 makes two-beam accurately be in the alternation switch state by the control of FLS control system.
Fig. 3 is that ruddiness and white light replace synchronous synoptic diagram in the light source module, illustrates at any one time to have only a kind of state that is in out in the white light and ruddiness.
Fig. 4 is a measuring system agent structure synoptic diagram, and the light of transmission cable 9 outputs from Fig. 2 light source module is the orthopedic systems through being made up of lens 10 and 11 earlier, and the hot spot mask 12 that evenly throws light on then produces the hot spot of setting; This hot spot reflexes to beam splitter 16 by catoptron 15 after passing through first imaging system of being made up of lens 13 and 14; The ruddiness of beam splitter 16 outputs is imaged on lower surface 17 places of projection objective, and white light is imaged on silicon chip upper surface 18 places that will expose, and produces the shape and the distribution of pre-designed hot spot respectively on 17 and 18; The light that is projected the 17 and 18 place's surface of position information of carrying of object lens lower surface 17 and 18 reflections of silicon chip upper surface synthesizes a branch of light again through bundling device 19; After this light beam reflects through catoptron 20, through second imaging system of forming by lens 21 and 22.In general 13,14,15,16 identical with 22,21,20,19 structures respectively and symmetrical uses.The light beam of second imaging system output is divided into two bundles by energy beam splitter 23, after a branch of process is used for selecting the mask 24 of specific hot spot, is imaged on the position sensitive detector 25 of bigness scale; After another bundle reflexes to the amplification system of being made up of lens 27 and 28 by catoptron 26, be imaged on the position sensitive detector 29 of accurate measurement.
Owing to not process amplification of the light beam on the position sensitive detector 25 of getting to bigness scale, and have only the part hot spot to be utilized, so relatively low measuring accuracy and relatively large measurement range are arranged; And the light beam of getting on the position sensitive detector 29 of accurate measurement is through the whole hot spots after amplifying, so have higher relatively measuring accuracy and relative less measurement range.Because the zero plane of accurate measurement and the zero plane of bigness scale are set to overlap; So just make the existing bigger measurement range of focusing and leveling sensor-based system of litho machine that higher measuring accuracy is arranged again.In this sensor, can have ± measurement range of 400 μ m and the measuring accuracy of 10nm, this can well satisfy at present high-end 90nm node until the litho machine of 45nm node to the performance demands of focusing leveling system.
For the focusing and leveling system, need the Z of the silicon chip upper surface of exposure, Rx, the information of the three degree of freedom of Ry with respect to the best focal plane or the setting plane (or lower surface of projection objective) of projection objective; And the Rx of measuring object, Ry information can be come out to information calculations by the Z of multiple spot, thus each hot spot only need measure Z to information, metrical information by all hot spots simulates the plane according to certain algorithm then, thereby obtain the Z of measuring object, Rx, the information of Ry.So native system only need carry out the one-dimension information measurement to object and get final product, so the position sensitive detector 29 and 25 of accurate measurement and bigness scale need be an one dimension only all.
Because this system has adopted the relative position of projection objective lower surface 17 and silicon chip upper surface 18 has been measured, and can think that the relative position of best focal plane of the lower surface of projection objective and projection objective fixes, be the machine constant, so this focusing and leveling system is insensitive fully to the measurement of the relative position information of the best focal plane of the upper surface of silicon chip and projection objective to the position excursion and the vibration of projection objective itself.And owing to being what to be coupling in together by identical optical system outside beam splitter 16 and bundling device 19 to 17 and 18 two-beams of measuring, according to the principle of difference measurement, the measurement performance of this focusing and leveling system is insensitive to the drift and the vibration of the integrally-built mechanical location of whole focusing and leveling.As seen, external mechanical vibration can not influence the measuring accuracy of this focusing and leveling system, and design that the stability of this system self inside can be by concrete structure and material get and choosing of device solved.Therefore, that is to say that not only there are higher measuring accuracy and bigger measurement range in this focusing and leveling system, and advantages of higher stability and reliability are arranged, can satisfy of the strict demand of high-end litho machine for the focusing and leveling system.
Fig. 5 is the distribution schematic diagram of the measured zone of whole focusing and leveling, and wherein silicon chip upper surface 1 comprises the be separated by sector regions 2 of 120 degree of three centers; When first of a collection of similar silicon chip is measured, measure respectively three sector regions; Then only need to measure any one zone in three sector regions for the focusing and leveling of all the other silicon chips of this batch silicon chip, can improve the production efficiency of litho machine like this.
That more than introduces only is based on several preferred embodiment of the present invention, can not limit scope of the present invention with this.Any device of the present invention is done replacement, the combination, discrete of parts well know in the art, and the invention process step is done well know in the art being equal to change or replace and all do not exceed exposure of the present invention and protection domain.
Claims (14)
1, a kind of photoelectric difference system, it is characterized in that comprising: a narrowband light source and a broadband light light source that wave band is different according to the direction of propagation of incident light, the coupled system that is used for coupled light beam, first imaging system, wave length beam splitting device, two tested surfaces, the wavelength bundling device, second imaging system, energy beam splitter, the position sensitive detector that is used for the position bigness scale, amplification system and the position sensitive detector that is used for the position accurate measurement.
2, photoelectric difference as claimed in claim 1 system is characterized in that between described narrowband light source and the coupled system for focusing on orthopedic systems.
3, photoelectric difference as claimed in claim 1 system, a side that it is characterized in that described broadband light light source is a coupled system, opposite side is a condenser system.
4, photoelectric difference as claimed in claim 1 system is characterized in that also comprising the beam shaping system between described broadband light light source and the coupled system.
5, photoelectric difference as claimed in claim 4 system is characterized in that being photoswitch in the middle of the described beam shaping system that this photoswitch is the integral multiple of the modulating frequency of narrow band light to the modulating frequency of broadband light.
6, photoelectric difference as claimed in claim 1 system is characterized in that also comprising the transmission cable that is used to transmit coupled system output light.
7,, it is characterized in that also comprising the beam shaping system of the light that is used to adjust transmission cable output as claim 1 and 6 described photoelectric difference systems.
8,, it is characterized in that being between the described beam shaping system and first imaging system hot spot mask as claim 1 and 7 described photoelectric difference systems.
9, photoelectric difference as claimed in claim 1 system is characterized in that between the position sensitive detector of described energy beam splitter and bigness scale for selecting the hot spot mask of hot spot.
10, photoelectric difference as claimed in claim 1 system is characterized in that the position sensitive detector of described bigness scale and the position sensitive detector of accurate measurement can be one dimensions.
11, a kind of photoelectric difference method is characterized in that comprising the following steps:
A branch of narrow band light of different-waveband and a branch of broadband light form coupled light beam through coupled system, and coupled light beam illumination hot spot mask produces hot spot;
This hot spot separates the broadband light and the narrow band light that were coupling in originally together, and is imaged onto respectively on two tested surfaces successively through behind first imaging system and the wave length beam splitting device;
Broadband light and narrow band light through two tested surface reflections are coupled into coupled light beam by the wavelength bundling device;
After coupled light beam is passed through second imaging system, through the energy beam splitter, and separated into two parts;
A part is imaged on the position sensitive detector of bigness scale;
Another part is imaged on the position sensitive detector of accurate measurement through after the amplification system.
12, photoelectric difference method as claimed in claim 11 is characterized in that described broadband light through before the coupled system, also comprises being modulated into narrow band light by photoswitch replacing synchronous step.
13, photoelectric difference method as claimed in claim 11, it is characterized in that coupled light beam illumination hot spot before, also comprise step by the beam shaping system.
14, photoelectric difference method as claimed in claim 11, it is characterized in that light beam is imaged on the position sensitive detector of bigness scale before, also comprise the step of selecting by the hot spot mask.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101169601B (en) * | 2007-11-21 | 2010-09-15 | 上海微电子装备有限公司 | Focusing leveling measuring system |
| CN101201548B (en) * | 2007-12-07 | 2011-05-11 | 上海微电子装备有限公司 | Measuring system and method for focusing and leveling |
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2006
- 2006-10-20 CN CNB2006101174010A patent/CN100520598C/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101169601B (en) * | 2007-11-21 | 2010-09-15 | 上海微电子装备有限公司 | Focusing leveling measuring system |
| CN101201548B (en) * | 2007-12-07 | 2011-05-11 | 上海微电子装备有限公司 | Measuring system and method for focusing and leveling |
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| CN100520598C (en) | 2009-07-29 |
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Address after: 201203 Zhangjiang High Tech Park, Shanghai, Zhang Dong Road, No. 1525 Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Zhangjiang High Tech Park, Shanghai, Zhang Dong Road, No. 1525 Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |